CN110137156A - A kind of metal-oxide-semiconductor capacitor part and preparation method based on hafnium silicate - Google Patents
A kind of metal-oxide-semiconductor capacitor part and preparation method based on hafnium silicate Download PDFInfo
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- CN110137156A CN110137156A CN201910291852.3A CN201910291852A CN110137156A CN 110137156 A CN110137156 A CN 110137156A CN 201910291852 A CN201910291852 A CN 201910291852A CN 110137156 A CN110137156 A CN 110137156A
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- hafnium silicate
- oxide
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- metal
- coating
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 229910052735 hafnium Inorganic materials 0.000 title claims abstract description 34
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000003990 capacitor Substances 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000011248 coating agent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims abstract description 22
- 238000000137 annealing Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 150000002927 oxygen compounds Chemical class 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 24
- 239000000463 material Substances 0.000 abstract description 9
- -1 lower electrode Chemical compound 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000007903 penetration ability Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000005510 radiation hardening Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses a kind of metal-oxide-semiconductor capacitor part and preparation method based on hafnium silicate, including lower electrode, substrate, oxide skin(coating) and top electrode；The base lower portion is provided with lower electrode；The base upper portion is provided with oxide skin(coating)；The oxide layer is provided with top electrode；The oxide skin(coating) is hafnium silicate；Preparation specific steps include: a) to clean substrate；B) sull is prepared；C) top electrode and lower electrode layer are prepared.The present invention prepares semiconductor devices using high dielectric constant material hafnium silicate, has preferable radiation resistance, meets the demand that semiconductor devices needs the reliable and stable work under radiation environment for a long time；The power consumption for reducing device reduces the electric leakage of device under identical equivalent thickness；While improving radiation resistance, preparation process is compatible with conventional semiconductor processing, controls preparation cost.
Description
Technical field
The present invention relates to a kind of technology of field of microelectronic devices, specifically a kind of field of electronic devices is based on high-k material
Expect the metal-oxide-semiconductor capacitor part (MOSCAP device) and preparation method thereof of hafnium silicate.
Background technique
With the fast development of space technology, space flight strategic arms and microelectric technique, more and more electronic components
It is used by space product.It is radiation-sensitive that wherein semiconductor devices (including: semi-conductor discrete device, integrated circuit etc.) is most of
Inductor component, radiation environment can generate different degrees of influence to the performance of these devices, or even make its failure.
Space radiation environment is mainly from cosmic ray, solar flare radiation and earth-circling inside and outside Van Allen radiation
Band etc..Although radiation dose rate is very low, since it is that a cumulative effect will lead to when dosage rate is accumulated to certain value
The performance of electronic device changes, and will lead to complete device failure when serious, makes electronic equipment cisco unity malfunction.
With the raising of device integration and the reduction of operating voltage, device is also big to the susceptibility of single particle effect
Amplitude improves, and traditional semiconductor devices based on silica has lower radiation resistance, is not enough to for a long time in spoke
It penetrates in environment and reliablely and stablely works.Therefore it needs to set for various radiation effects in the material of device, circuit design, structure
The links such as meter, technique manufacture and encapsulation take reinforcement measure, make it have certain radiation resistance.Radiation hardening
Device is applied in space radiation environment, and the reliability and service life of spacecraft will be improved;It applies in strategic arms, it will
Its efficiency and penetration ability can be improved.
Summary of the invention
Object of the present invention is to: provide it is a kind of for existing for the existing semiconductor devices based on silica it is above-mentioned not
Foot, proposes a kind of MOSCAP device and preparation method thereof based on high-k material hafnium silicate, can improve semiconductor devices
Radiation resistance meets semiconductor devices and needs for a long time under radiation environment the needs of reliable and stable work, while in technique
It is compatible with traditional handicraft, control preparation cost.
The technical scheme is that a kind of metal-oxide-semiconductor capacitor part based on hafnium silicate, including lower electricity
Pole, substrate, oxide skin(coating) and top electrode；The base lower portion is provided with lower electrode；The base upper portion is provided with oxide skin(coating)；
The oxide layer is provided with top electrode；The oxide skin(coating) is hafnium silicate.
Preferably, the oxide skin(coating) is hafnium silicate film, film thickness 200-300nm.
Preferably, display is provided with several top electrodes on the oxide skin(coating).
Preferably, described to power on extremely cylinda gold category aluminum film layer, with a thickness of 800-900nm, area 1.4-1.8
×10-9cm2。
Preferably, the substrate is silicon membrane layer, with a thickness of 280-320 μm.
A kind of preparation method of the metal-oxide-semiconductor capacitor part based on hafnium silicate, specific steps include:
A) substrate is cleaned
Substrate is completely immersed in and is held in the aqueous solution containing 2%-5% hydrofluoric acid, after impregnating 30-120 seconds, is rinsed with deionized water
Substrate removes remaining impurity and with being dried with nitrogen；
B) sull is prepared
Target source hafnium silicate is splashed in substrate by sputtering method, target source hafnium silicate purity is not less than 99.99%, and sputtering atmosphere is
Argon gas, pressure are not higher than 10-5Pa；After sputtering, by substrate as annealing in nitrogen atmosphere, annealing temperature 700-
800 DEG C, annealing time is 30-40 minutes；
C) top electrode and lower electrode layer are prepared
Top electrode and lower electrode, electrode on metal aluminium-vapour deposition to oxide skin(coating) and substrate, will be respectively formed by electron beam evaporation
With a thickness of 800-900nm.
The invention has the advantages that
1, semiconductor devices is prepared using high dielectric constant material hafnium silicate, with traditional semiconductor devices based on silica
It compares, there is preferable radiation resistance, meet semiconductor devices and need the reliable and stable work under radiation environment for a long time
Demand；
2, the application of high dielectric constant material hafnium silicate reduces device compared with traditional semiconductor devices based on silica
The power consumption of part reduces the electric leakage of device under identical equivalent thickness；
3, while improving radiation resistance, preparation process is compatible with conventional semiconductor processing, controls preparation cost.
Detailed description of the invention
The invention will be further described with reference to the accompanying drawings and embodiments:
A kind of structural schematic diagram of the metal-oxide-semiconductor capacitor part based on hafnium silicate described in Fig. 1 this case；
A kind of metal-oxide-semiconductor capacitor part based on hafnium silicate described in Fig. 2 this case is under 0-75Gy dose of radiation
The drift figure of flat-band voltage；
Wherein: 1, top electrode；2, oxide skin(coating)；3, substrate；4, lower electrode.
Specific embodiment
Embodiment:
As shown in attached drawing 1-2, a kind of metal-oxide-semiconductor capacitor part based on hafnium silicate, including lower electrode 4, substrate 3,
Oxide skin(coating) 2 and top electrode 1；3 lower part of substrate is provided with lower electrode 4；3 top of substrate is provided with oxide skin(coating) 2；Institute
It states oxide skin(coating) 2 and is provided with top electrode 1 above；The oxide skin(coating) 2 is high dielectric constant material hafnium silicate (referred to as high-k material
Expect hafnium silicate)；The oxide skin(coating) 2 is high-k material hafnium silicate film, film thickness 280nm；On the oxide skin(coating) 2
Display is provided with several top electrodes 1；The top electrode 1 is cylindricality metal aluminum film layer, with a thickness of 830nm, area is 1.6 ×
10-9cm2；The substrate 3 is silicon membrane layer, thickness 530nm.
A kind of preparation method of the metal-oxide-semiconductor capacitor part based on hafnium silicate, specific steps include:
A) substrate is cleaned
Substrate is completely immersed in and is held in the aqueous solution containing 4% hydrofluoric acid, after impregnating 60 seconds, substrate is rinsed with deionized water and goes
Except remaining impurity and with being dried with nitrogen；
B) sull is prepared
Target source hafnium silicate is splashed in substrate by sputtering method, target source hafnium silicate purity is not less than 99.99%, and sputtering atmosphere is
Argon gas, pressure are not higher than 10-5Pa；After sputtering, by substrate as annealing in nitrogen atmosphere, annealing temperature is 760 DEG C,
Annealing time is 35 minutes；
C) top electrode and lower electrode layer are prepared
Top electrode and lower electrode, electrode on metal aluminium-vapour deposition to oxide skin(coating) and substrate, will be respectively formed by electron beam evaporation
With a thickness of 800-900nm；Top electrode area is 1.6 × 10-9cm2。
It is illustrated in figure 2 flatband voltage shift of this example MOSCAP device under Co-60 radiation source, radiation dose rate is about
For 556 mGy/s, accumulated dose is about 75Gy, this example MOSCAP device is about 4.5 mV/Gy for the susceptibility of radiation, and is passed
System is about 30 mV/Gy based on susceptibility of the semiconductor devices of silica for radiation, this example MOSCAP device is significantly
Semiconductor devices is reduced for the susceptibility of radiation, meets semiconductor devices and needs long-time reliable and stable under radiation environment
The demand of work.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any
Those skilled in the art all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.
Therefore, such as those of ordinary skill in the art without departing from revealed spirit of the invention under technical idea
All equivalent modifications completed or change should be covered by the claims of the present invention.
Claims (6)
1. a kind of metal-oxide-semiconductor capacitor part based on hafnium silicate, it is characterised in that: including lower electrode, substrate, oxygen
Compound layer and top electrode；The base lower portion is provided with lower electrode；The base upper portion is provided with oxide skin(coating)；The oxide
Layer is provided with top electrode above；The oxide skin(coating) is hafnium silicate.
2. a kind of metal-oxide-semiconductor capacitor part based on hafnium silicate according to claim 1, it is characterised in that:
The oxide skin(coating) is hafnium silicate film, film thickness 200-300nm.
3. a kind of metal-oxide-semiconductor capacitor part based on hafnium silicate according to claim 1, it is characterised in that:
Display is provided with several top electrodes on the oxide skin(coating).
4. a kind of metal-oxide-semiconductor capacitor part based on hafnium silicate according to claim 1, it is characterised in that:
It is described to power on extremely cylinda gold category aluminum film layer, with a thickness of 800-900nm.
5. a kind of metal-oxide-semiconductor capacitor part based on hafnium silicate according to claim 1, it is characterised in that:
The substrate is silicon membrane layer, with a thickness of 280-320 μm.
6. a kind of metal-oxide-semiconductor capacitor based on hafnium silicate described in a kind of -5 any one according to claim 1
The preparation method of part, it is characterised in that: specific steps include:
A) substrate is cleaned
Substrate is completely immersed in and is held in the aqueous solution containing 2%-5% hydrofluoric acid, after impregnating 30-120 seconds, is rinsed with deionized water
Substrate removes remaining impurity and with being dried with nitrogen；
B) sull is prepared
Target source hafnium silicate is splashed in substrate by sputtering method, target source hafnium silicate purity is not less than 99.99%, and sputtering atmosphere is
Argon gas, pressure are not higher than 10-5Pa；After sputtering, by substrate as annealing in nitrogen atmosphere, annealing temperature 700-
800 DEG C, annealing time is 30-40 minutes；
C) top electrode and lower electrode layer are prepared
Top electrode and lower electrode, electrode on metal aluminium-vapour deposition to oxide skin(coating) and substrate, will be respectively formed by electron beam evaporation
With a thickness of 800-900nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910291852.3A CN110137156A (en) | 2019-04-12 | 2019-04-12 | A kind of metal-oxide-semiconductor capacitor part and preparation method based on hafnium silicate |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910291852.3A CN110137156A (en) | 2019-04-12 | 2019-04-12 | A kind of metal-oxide-semiconductor capacitor part and preparation method based on hafnium silicate |
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| CN110137156A true CN110137156A (en) | 2019-08-16 |
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| CN201910291852.3A Pending CN110137156A (en) | 2019-04-12 | 2019-04-12 | A kind of metal-oxide-semiconductor capacitor part and preparation method based on hafnium silicate |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1655362A (en) * | 2004-01-29 | 2005-08-17 | 三星电子株式会社 | Dielectric layer for semiconductor device and method of manufacturing the same |
| CN1771603A (en) * | 2003-04-09 | 2006-05-10 | 杰斯半导体公司纽波特工厂 | High density composite mim capacitor with reduced voltage dependence in semiconductor dies |
| JP2007067266A (en) * | 2005-09-01 | 2007-03-15 | Toshiba Corp | Semiconductor device |
| US20080315430A1 (en) * | 2007-06-22 | 2008-12-25 | Qimonda Ag | Nanowire vias |
| US20090181549A1 (en) * | 2008-01-10 | 2009-07-16 | Kenji Yoneda | Method for forming a gate insulating film |
| CN105226044A (en) * | 2014-05-29 | 2016-01-06 | 联华电子股份有限公司 | The method of integrated circuit and formation integrated circuit |
| CN209747510U (en) * | 2019-04-12 | 2019-12-06 | 西交利物浦大学 | Metal oxide semiconductor capacitor device based on hafnium silicate |
-
2019
- 2019-04-12 CN CN201910291852.3A patent/CN110137156A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1771603A (en) * | 2003-04-09 | 2006-05-10 | 杰斯半导体公司纽波特工厂 | High density composite mim capacitor with reduced voltage dependence in semiconductor dies |
| CN1655362A (en) * | 2004-01-29 | 2005-08-17 | 三星电子株式会社 | Dielectric layer for semiconductor device and method of manufacturing the same |
| JP2007067266A (en) * | 2005-09-01 | 2007-03-15 | Toshiba Corp | Semiconductor device |
| US20080315430A1 (en) * | 2007-06-22 | 2008-12-25 | Qimonda Ag | Nanowire vias |
| US20090181549A1 (en) * | 2008-01-10 | 2009-07-16 | Kenji Yoneda | Method for forming a gate insulating film |
| CN105226044A (en) * | 2014-05-29 | 2016-01-06 | 联华电子股份有限公司 | The method of integrated circuit and formation integrated circuit |
| CN209747510U (en) * | 2019-04-12 | 2019-12-06 | 西交利物浦大学 | Metal oxide semiconductor capacitor device based on hafnium silicate |
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