CN112382573A - Synapse type thin film transistor based on lithium-doped transparent oxide and preparation method thereof - Google Patents
Synapse type thin film transistor based on lithium-doped transparent oxide and preparation method thereof Download PDFInfo
- Publication number
- CN112382573A CN112382573A CN202011261096.9A CN202011261096A CN112382573A CN 112382573 A CN112382573 A CN 112382573A CN 202011261096 A CN202011261096 A CN 202011261096A CN 112382573 A CN112382573 A CN 112382573A
- Authority
- CN
- China
- Prior art keywords
- lithium
- transparent oxide
- doped transparent
- substrate
- preparing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 title claims abstract description 38
- 210000000225 synapse Anatomy 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 230000008569 process Effects 0.000 claims abstract description 10
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 10
- 239000007864 aqueous solution Substances 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 21
- 239000002243 precursor Substances 0.000 claims description 20
- 239000008367 deionised water Substances 0.000 claims description 14
- 229910021641 deionized water Inorganic materials 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 238000004381 surface treatment Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 8
- 238000009832 plasma treatment Methods 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 abstract description 6
- 229910001416 lithium ion Inorganic materials 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 5
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 239000011664 nicotinic acid Substances 0.000 description 3
- 230000000638 stimulation Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 210000004556 brain Anatomy 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- -1 polyethylene Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 210000002569 neuron Anatomy 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000946 synaptic effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
- H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
The invention relates to a preparation method of a synapse-type thin film transistor based on a lithium-doped transparent oxide, which comprises the following steps: s1, providing a substrate, and cleaning and hydrophilically treating the substrate; s2, preparing a lithium-doped transparent oxide insulating layer on one surface of the substrate by using an aqueous solution method; s3, carrying out hydrophilic treatment on the lithium-doped transparent oxide insulating layer; s4, preparing an oxide semiconductor layer on the lithium-doped transparent oxide insulating layer by using an aqueous solution method; s5, preparing a source electrode and a drain electrode on the oxide semiconductor layer by using a thermal evaporation process; s6, preparing a gate electrode on one side of the substrate far away from the lithium-doped transparent oxide insulating layer by using a thermal evaporation process, wherein the preparation method is environment-friendly, low in temperature and capable of large-area preparation, the low temperature in the preparation enables the preparation process to be simple and efficient, the preparation time can be greatly reduced, the preparation cost is low, the insulating layer has vacancy defects, and meanwhile, the insulating layer is doped with lithium ions, so that the device has good synapse device characteristics.
Description
Technical Field
The invention relates to a synapse-type thin film transistor based on a lithium-doped transparent oxide and a preparation method thereof, belonging to the technical field of microelectronics.
Background
With the rise of the fields of internet of things, big data and artificial intelligence, the demand of people on low energy consumption and high-adaptability calculation is increasing day by day, and the traditional von Neumann calculation is difficult to meet the demand of human society. The neural mimicry calculation has an information processing mode completely different from the traditional von Neumann calculation, and the thinking capability and the reaction capability of a computer are greatly improved by simulating the human brain structure. In the brain, neurons achieve functions such as learning and memory by modifying synaptic weights between biological synapses, which indicates that the development of artificial synapses (i.e., synaptic-type thin film transistors) is crucial for the implementation of neuromorphic calculations. However, the existing preparation method of the synapse-type thin film transistor is generally prepared by photolithography and vacuum coating, and the preparation method needs expensive large-scale equipment, and has long preparation time and high production cost. And the prior synapse type thin film transistor is not suitable for being applied to flexible electronic devices and the like.
Disclosure of Invention
The invention aims to provide a synapse-type thin film transistor based on a lithium-doped transparent oxide prepared by a solution method.
In order to achieve the purpose, the invention provides the following technical scheme: a method for preparing a synapse-type thin film transistor based on a lithium-doped transparent oxide, the method comprising:
s1, providing a substrate, and cleaning and carrying out hydrophilic treatment on the substrate;
s2, preparing a lithium-doped transparent oxide insulating layer on one surface of the substrate by using an aqueous solution method;
s3, carrying out hydrophilic treatment on the lithium-doped transparent oxide insulating layer;
s4, preparing an oxide semiconductor layer on the lithium-doped transparent oxide insulating layer by using an aqueous solution method;
s5, preparing a source electrode and a drain electrode on the oxide semiconductor layer by using a thermal evaporation process;
and S6, preparing a gate electrode on one side of the substrate far away from the lithium-doped transparent oxide insulating layer by utilizing a thermal evaporation process, and obtaining the synapse-type thin film transistor based on the lithium-doped transparent oxide.
Further, the transparent oxide is transparent alumina.
Further, the material of the oxide semiconductor layer is indium oxide.
Further, the material of the source electrode, the drain electrode and the gate electrode is aluminum.
Further, the substrate is an n-type heavily doped silicon wafer.
Further, the width-to-length ratio of the source electrode to the drain electrode is 1: 1.2-1.6
Further, the specific steps of cleaning the substrate are as follows: cleaning the substrate with deionized water, 4% hydrofluoric acid and deionized water in sequence, and finally drying the substrate with nitrogen; the method for carrying out hydrophilic treatment on the substrate comprises the following specific steps: and putting the substrate into a plasma surface treatment instrument, and carrying out plasma treatment for 15-20 min.
Further, the specific preparation steps of the lithium-doped transparent oxide insulating layer are as follows: preparing a lithium-doped transparent oxide precursor solution, and dripping the lithium-doped transparent oxide precursor on one surface of the substrate; spin coating for 20s in air at 3000-4000 rpm; annealing at 200 deg.C for 30-40 min.
Further, the specific preparation steps of the oxide semiconductor layer are as follows: preparing an oxide semiconductor precursor solution, and dripping the oxide semiconductor precursor on the lithium-doped transparent oxide insulating layer; spin coating for 20s in air at 3000-4000 rpm; annealing at 200 deg.C for 60-80 min.
Further, the specific preparation steps of the source electrode, the drain electrode and the gate electrode are as follows: to be provided with
With a thickness of 400-900 nm.
The invention also provides a synapse-type thin film transistor based on the lithium-doped transparent oxide, which is obtained by the preparation method of the synapse-type thin film transistor based on the lithium-doped transparent oxide, and comprises a gate electrode, a substrate, a lithium-doped transparent oxide insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode which are sequentially stacked from bottom to top.
The invention has the beneficial effects that: the preparation method is environment-friendly, low in temperature and capable of large-area preparation, the manufacturing process is simple and efficient due to the low temperature in the preparation process, the preparation time can be greatly shortened, the preparation cost is low, the insulating layer has vacancy defects, meanwhile, the lithium-doped transparent oxide is used as the insulating layer, the conductivity of the device is more easily controlled by an electric field due to the doping of lithium ions, and the synapse-type thin film transistor has good synapse device characteristics; the low-temperature preparation can be matched with a flexible device, so that the bionic device can be widely applied.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a schematic structural diagram of a synapse-type thin film transistor based on a lithium-doped transparent oxide in accordance with the present invention;
FIG. 2 is a graph showing an electrical output curve of the synapse-type thin film transistor based on a lithium-doped transparent oxide in FIG. 1.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, the present invention provides a synapse-type thin film transistor based on a lithium-doped transparent oxide, which includes a gate electrode 500, a substrate 400, a lithium-doped transparent oxide insulating layer 300, an oxide semiconductor layer 200, and a source electrode 100 and a drain electrode 101, which are sequentially stacked from bottom to top. The source electrode 100 and the drain electrode 101 are both located on the oxide semiconductor layer 200, the distance between the source electrode 100 and the drain electrode 101 is 10-100um, the source electrode and the drain electrode have the same size, and the width-to-length ratio is 1: 1.2-1.6, and indeed, in other embodiments, the ratio of the width to the length of the source electrode and the drain electrode may be other ratios, which are not listed here and can be selected according to actual needs.
The thickness of the lithium-doped transparent oxide insulating layer 300 is 20-40nm, and in a preferred embodiment, the thickness of the lithium-doped transparent oxide insulating layer 300 may be 20 nm. The thickness of the oxide semiconductor layer 200 is 25-50nm, and in a preferred embodiment, the thickness of the oxide semiconductor layer 200 may be 25 nm. The thickness of the source electrode 100, the drain electrode 101 and the gate electrode 500 is 400-900nm, and in a preferred embodiment, the thickness of the source electrode 100, the drain electrode 101 and the gate electrode 500 may be 400 nm.
The transparent oxide is transparent aluminum oxide, the oxide semiconductor layer is made of indium oxide, the source electrode, the drain electrode and the gate electrode are made of aluminum, and the substrate is an n-type heavily-doped silicon wafer. The material of the transparent oxide and the oxide semiconductor layer, and the material of the substrate and the source, drain, and gate electrodes are not limited to the above examples, and may be other materials, for example, the transparent oxide may be transparent zinc aluminum oxide or the like, the material of the oxide semiconductor layer may be zinc oxide or the like, the material of the source, drain, and gate electrodes may be nickel, gold, chromium, titanium ITO or the like, and the substrate may be a silicon oxide substrate, which is not listed here.
The lithium-doped transparent oxide is used as an insulating layer, and the conductivity of the device is easier to be controlled by an electric field due to the doping of lithium, so that the device has good synapse device characteristics. The synapse type thin film transistor based on the lithium-doped transparent oxide has a source electrode, a drain electrode and a gate electrode, is a three-terminal device, has the advantage of multi-terminal stimulation when being used as a synapse type device, and can simultaneously receive light stimulation and electrical stimulation, so that the thin film transistor has the potential to manufacture a more complex synapse type sensor.
The invention provides a preparation method of a synapse-type thin film transistor based on a lithium-doped transparent oxide, which is used for preparing the synapse-type thin film transistor based on the lithium-doped transparent oxide and comprises the following steps:
s1, providing a substrate, and cleaning and hydrophilically treating the substrate;
s2, preparing a lithium-doped transparent oxide insulating layer on one surface of the substrate by using an aqueous solution method;
s3, carrying out hydrophilic treatment on the lithium-doped transparent oxide insulating layer;
s4, preparing an oxide semiconductor layer on the lithium-doped transparent oxide insulating layer by using an aqueous solution method;
s5, preparing a source electrode and a drain electrode on the oxide semiconductor layer by using a thermal evaporation process;
and S6, preparing a gate electrode on the side of the substrate far away from the lithium-doped transparent oxide insulating layer by utilizing a thermal evaporation process, and obtaining the synapse-type thin film transistor based on the lithium-doped transparent oxide.
The method comprises the following specific steps of: and cleaning the substrate by deionized water, 4% hydrofluoric acid and deionized water in sequence, and finally blowing the substrate by nitrogen. More specifically, the substrate is firstly placed in a flower basket made of polyethylene material, and the flower basket filled with the substrate is placed in deionized water for primary cleaning; then completely immersing the flower basket with the substrate into a 4% hydrofluoric acid solution for 30 s; then putting the flower basket with the substrate into deionized water for secondary cleaning; and finally, blowing the substrate by using nitrogen.
The method for carrying out hydrophilic treatment on the substrate comprises the following specific steps: and (3) putting the substrate into a plasma surface treatment instrument, and carrying out plasma treatment for 15-20 min. More specifically, the cleaned substrate is placed into a plasma surface treatment instrument, the plasma surface treatment instrument is firstly vacuumized for 2-5min by an air pump, and then an irradiation switch is turned on for plasma treatment for 15-20 min. Since the substrate is a hydrophobic material, it is desirable to improve the hydrophilicity of the substrate surface so that it is easier to prepare a lithium-doped transparent oxide insulating layer on the substrate surface.
The specific preparation steps of the lithium-doped transparent oxide insulating layer are as follows: preparing a lithium-doped transparent oxide precursor solution, and dripping the lithium-doped transparent oxide precursor on one surface of a substrate; spin coating for 20s in air at 3000-4000 rpm; annealing at 200 deg.C for 30-40 min. The lithium-doped transparent oxide precursor solution is a lithium-doped transparent alumina precursor solution, and the specific preparation method of the lithium-doped transparent alumina precursor solution comprises the following steps: 4.5g of Al (NO)3)3·9H2O was dissolved in 5ml of deionized water to give Al (NO) at 2M concentration3)3·9H2O and 5% LiOH doped therein.
In order to form an oxide semiconductor layer on the surface of the lithium-doped transparent oxide insulating layer more easily, the hydrophilicity of the surface of the lithium-doped transparent oxide insulating layer needs to be improved, and the method for performing hydrophilic treatment on the lithium-doped transparent oxide insulating layer is as follows: and putting the substrate with the lithium-doped transparent oxide insulating layer into a plasma surface treatment instrument, vacuumizing the plasma surface treatment instrument for 2-5min by using an air pump, and then opening an irradiation switch to perform plasma treatment for 15-20 min.
The specific preparation steps of the oxide semiconductor layer are as follows: preparing an oxide semiconductor precursor solution, and dripping the oxide semiconductor precursor on the lithium-doped transparent oxide insulating layer; with 3000-Spin coating at 4000rpm for 20s in air; annealing at 200 deg.C for 60-80 min. The preparation method of the indium oxide semiconductor precursor solution comprises the following steps: 0.9g of In (NO)3)3Dissolved In 20ml of deionized water to give In (NO) at a concentration of 0.15M3)3。
The specific preparation steps of the source electrode, the drain electrode and the gate electrode are as follows: to be provided with
With a thickness of 400-900 nm.
The preparation method is a solution method, has the characteristics of environmental protection and large-area preparation at low temperature (not more than 200 ℃), the preparation process is simple and efficient due to the low temperature in the preparation process, the preparation cost is low, and meanwhile, the low-temperature preparation can be matched with a flexible device, so that the bionic device can be widely applied.
The following detailed description is made with specific examples regarding the preparation method of a synapse-type thin film transistor based on lithium-doped transparent oxide:
example one
Step one, providing an n-type heavily doped silicon wafer and cleaning
Firstly placing an n-type heavily doped silicon wafer in a flower basket prepared from polyethylene material, and placing the flower basket filled with the n-type heavily doped silicon wafer in deionized water for primary cleaning; then completely immersing the flower basket filled with the n-type heavily-doped silicon wafer into 4% hydrofluoric acid solution for 30 s; then putting the flower basket filled with the n-type heavily doped silicon wafer into deionized water for secondary cleaning; and finally, blowing the n-type heavily doped silicon wafer by using nitrogen.
Step two, carrying out hydrophilic treatment on the n-type heavily doped silicon wafer
And putting the cleaned n-type heavily doped silicon wafer into a plasma surface treatment instrument, vacuumizing the plasma surface treatment instrument for 5min by using an air pump, and then opening an irradiation switch to perform plasma treatment for 20 min.
Step three, preparing the lithium-doped transparent aluminum oxide insulating layer
4.5g of Al (NO)3)3·9H2O was dissolved in 5ml of deionized water to give Al (NO) at 2M concentration3)3·9H2O, doping 5% of LiOH into the solution to obtain a lithium-doped transparent alumina precursor solution, and dripping the lithium-doped transparent alumina precursor on one surface of the substrate; spin coating for 20s in air at 3000-4000 rpm; annealing at 200 deg.C for 30-40 min.
Step four, carrying out hydrophilic treatment on the lithium-doped transparent aluminum oxide insulating layer
And putting the substrate with the lithium-doped transparent oxide insulating layer into a plasma surface treatment instrument, vacuumizing the plasma surface treatment instrument for 5min by using an air pump, and then opening an irradiation switch to perform plasma treatment for 20 min.
Step five, preparing an indium oxide semiconductor layer
0.9g of In (NO)3)3Dissolved In 20ml of deionized water to give In (NO) at a concentration of 0.15M3)3Namely, indium oxide semiconductor precursor solution is obtained, and the indium oxide semiconductor precursor is dripped on the lithium-doped transparent aluminum oxide insulating layer; spin coating for 20s in air at 3000-4000 rpm; annealing at 200 deg.C for 60-80 min.
Sixthly, preparing the source electrode and the drain electrode by using the mask with specific width-length ratio
Placing a mask on the indium oxide semiconductor layer, and performing thermal evaporation
The aluminum layer with the thickness of 400nm is grown at the rate of the second step to obtain the source electrode and the drain electrode, and the specific size of the mask is selected according to actual needs and is not particularly limited herein.
Step seven, preparing a gate electrode
By using a thermal evaporation process, on the side of the n-type heavily doped silicon wafer far away from the lithium-doped transparent oxide insulating layer
Growing an aluminum layer with a thickness of 400nm at a rate ofAnd a gate electrode.
Referring to fig. 2, it can be seen that the synapse-type thin film transistor based on lithium-doped transparent oxide obtained in the present invention has a good on-off ratio, a large hysteresis, and a good impulse response, on one hand, because the temperature in the process of preparing the thin film transistor is relatively low, and does not exceed 200 ℃, the time is relatively short, the alumina crystal in the lithium-doped transparent alumina insulation layer is not complete, and has vacancy defects, mainly oxygen vacancies, and when the voltage is scanned in the positive direction and in the negative direction, the oxygen vacancies attract electrons to cause a hysteresis phenomenon; on the other hand, because lithium ions are doped into the insulating layer, when a large electric field is applied to the gate electrode, the doped lithium ions can migrate to change the conductivity of the device, which is also an important reason that the synapse-type thin film transistor can be used as a synapse-type device.
Due to the migration and vacancy defects of lithium ions, the synapse-type thin film transistor based on the lithium-doped transparent oxide has great hysteresis, namely the conductivity of the synapse-type thin film transistor can float in a range after being stimulated by different voltages, the synapse-type thin film transistor meets the requirements of synapse-type devices, and the characteristics are very obvious.
In conclusion, the synapse-type thin film transistor based on the lithium-doped transparent oxide is prepared by using a solution method, the preparation method is environment-friendly, low in temperature and capable of large-area preparation, the preparation process is simple and efficient due to the low temperature in the preparation process, the preparation time can be greatly reduced, the preparation cost is low, the insulating layer has vacancy defects, meanwhile, the lithium-doped transparent oxide is used as the insulating layer, the conductivity of the device is more easily controlled by an electric field due to the doping of lithium ions, and the synapse-type thin film transistor has good synapse device characteristics; the low-temperature preparation can be matched with a flexible device, so that the bionic device can be widely applied.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (11)
1. A preparation method of a synapse-type thin film transistor based on a lithium-doped transparent oxide is characterized by comprising the following steps:
s1, providing a substrate, and cleaning and carrying out hydrophilic treatment on the substrate;
s2, preparing a lithium-doped transparent oxide insulating layer on one surface of the substrate by using an aqueous solution method;
s3, carrying out hydrophilic treatment on the lithium-doped transparent oxide insulating layer;
s4, preparing an oxide semiconductor layer on the lithium-doped transparent oxide insulating layer by using an aqueous solution method;
s5, preparing a source electrode and a drain electrode on the oxide semiconductor layer by using a thermal evaporation process;
and S6, preparing a gate electrode on one side of the substrate far away from the lithium-doped transparent oxide insulating layer by utilizing a thermal evaporation process, and obtaining the synapse-type thin film transistor based on the lithium-doped transparent oxide.
2. The method of claim 1, wherein the transparent oxide is transparent alumina.
3. The method of claim 1, wherein the oxide semiconductor layer is formed of indium oxide.
4. The method of claim 1, wherein the source, drain and gate electrodes are made of aluminum.
5. The method of claim 1, wherein the substrate is a heavily n-doped silicon wafer.
6. The method of claim 1, wherein the ratio of the width to the length of the source electrode to the drain electrode is 1: 1.2-1.6.
7. The method for preparing a synapse-type thin film transistor based on lithium-doped transparent oxide, as claimed in claim 1, wherein the substrate is cleaned by the following steps: cleaning the substrate with deionized water, 4% hydrofluoric acid and deionized water in sequence, and finally drying the substrate with nitrogen; the method for carrying out hydrophilic treatment on the substrate comprises the following specific steps: and putting the substrate into a plasma surface treatment instrument, and carrying out plasma treatment for 15-20 min.
8. The method for preparing a synapse-type thin film transistor based on lithium-doped transparent oxide as claimed in claim 1, wherein the lithium-doped transparent oxide insulating layer is prepared by the following steps: preparing a lithium-doped transparent oxide precursor solution, and dripping the lithium-doped transparent oxide precursor on one surface of the substrate; spin coating for 20s in air at 3000-4000 rpm; annealing at 200 deg.C for 30-40 min.
9. The method for preparing a synapse-type thin film transistor based on a lithium-doped transparent oxide, as claimed in claim 1, wherein the oxide semiconductor layer is prepared by the following steps: preparing an oxide semiconductor precursor solution, and dripping the oxide semiconductor precursor on the lithium-doped transparent oxide insulating layer; spin coating for 20s in air at 3000-4000 rpm; annealing at 200 deg.C for 60-80 min.
10. The method for preparing a synapse-type thin film transistor based on lithium-doped transparent oxide, as claimed in claim 1, wherein the source electrode, the drain electrode and the gate electrode are prepared by the following steps: to be provided with
With a thickness of 400-900 nm.
11. A synapse-type thin film transistor based on a lithium-doped transparent oxide, comprising a gate electrode, a substrate, a lithium-doped transparent oxide insulating layer, an oxide semiconductor layer, and source and drain electrodes, stacked in this order from bottom to top, resulting from a method of manufacturing the synapse-type thin film transistor based on a lithium-doped transparent oxide as claimed in any one of claims 1-10.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011261096.9A CN112382573A (en) | 2020-11-12 | 2020-11-12 | Synapse type thin film transistor based on lithium-doped transparent oxide and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011261096.9A CN112382573A (en) | 2020-11-12 | 2020-11-12 | Synapse type thin film transistor based on lithium-doped transparent oxide and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112382573A true CN112382573A (en) | 2021-02-19 |
Family
ID=74583130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011261096.9A Pending CN112382573A (en) | 2020-11-12 | 2020-11-12 | Synapse type thin film transistor based on lithium-doped transparent oxide and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112382573A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113035946A (en) * | 2021-03-11 | 2021-06-25 | 西交利物浦大学 | MXene-doped synapse type thin film transistor and preparation method thereof |
| CN113035961A (en) * | 2021-02-25 | 2021-06-25 | 西交利物浦大学 | Synapse type thin film transistor, preparation method thereof and operation array |
| CN113517351A (en) * | 2021-06-23 | 2021-10-19 | 西交利物浦大学 | Ion-doped thin film transistor and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987283A (en) * | 2018-06-22 | 2018-12-11 | 中山大学 | A kind of gallium tin oxide semiconductor thin film transistor (TFT) and its preparation method and application |
| CN109767988A (en) * | 2018-12-25 | 2019-05-17 | 西交利物浦大学 | Metal oxide thin-film transistor and preparation method thereof |
| CN109767989A (en) * | 2018-12-25 | 2019-05-17 | 西交利物浦大学 | Thin film transistor (TFT) of flexible substrate and preparation method thereof |
| CN110400837A (en) * | 2019-06-26 | 2019-11-01 | 西交利物浦大学 | A kind of thin film transistor (TFT) and method of plasma-enhanced solution combustion method preparation |
| CN110416310A (en) * | 2019-06-26 | 2019-11-05 | 西交利物浦大学 | A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide |
| KR20200094087A (en) * | 2019-01-29 | 2020-08-06 | 한양대학교 산학협력단 | Chalcogenide semiconductor and thin film transistor having the same |
-
2020
- 2020-11-12 CN CN202011261096.9A patent/CN112382573A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987283A (en) * | 2018-06-22 | 2018-12-11 | 中山大学 | A kind of gallium tin oxide semiconductor thin film transistor (TFT) and its preparation method and application |
| CN109767988A (en) * | 2018-12-25 | 2019-05-17 | 西交利物浦大学 | Metal oxide thin-film transistor and preparation method thereof |
| CN109767989A (en) * | 2018-12-25 | 2019-05-17 | 西交利物浦大学 | Thin film transistor (TFT) of flexible substrate and preparation method thereof |
| KR20200094087A (en) * | 2019-01-29 | 2020-08-06 | 한양대학교 산학협력단 | Chalcogenide semiconductor and thin film transistor having the same |
| CN110400837A (en) * | 2019-06-26 | 2019-11-01 | 西交利物浦大学 | A kind of thin film transistor (TFT) and method of plasma-enhanced solution combustion method preparation |
| CN110416310A (en) * | 2019-06-26 | 2019-11-05 | 西交利物浦大学 | A kind of film transistor device and preparation method improving radiation resistance with hydrogen peroxide |
Non-Patent Citations (1)
| Title |
|---|
| JUN LI ET AL.: "Li-Ion Doping as a strategy to Modulate the Electrical-Double-Layer for Improved Memory and Learning Behavior of Synapse Transistor Based on Fully Aqueous-Solution-Prcocessd In2O3/AlLiO film", ADV. ELECTRON. MATER., vol. 6, no. 4, pages 1901363 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113035961A (en) * | 2021-02-25 | 2021-06-25 | 西交利物浦大学 | Synapse type thin film transistor, preparation method thereof and operation array |
| CN113035946A (en) * | 2021-03-11 | 2021-06-25 | 西交利物浦大学 | MXene-doped synapse type thin film transistor and preparation method thereof |
| CN113517351A (en) * | 2021-06-23 | 2021-10-19 | 西交利物浦大学 | Ion-doped thin film transistor and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112382573A (en) | Synapse type thin film transistor based on lithium-doped transparent oxide and preparation method thereof | |
| Liu et al. | All-in-one metal-oxide heterojunction artificial synapses for visual sensory and neuromorphic computing systems | |
| CN117423746A (en) | Photoelectric regulation and control nerve synapse transistor and preparation method thereof | |
| Li et al. | Li‐Ion Doping as a Strategy to Modulate the Electrical‐Double‐Layer for Improved Memory and Learning Behavior of Synapse Transistor Based on Fully Aqueous‐Solution‐Processed In2O3/AlLiO Film | |
| CN112201696B (en) | Self-driven friction nano-power generation synaptic transistor | |
| Zhou et al. | Solution-processed chitosan-gated IZO-based transistors for mimicking synaptic plasticity | |
| CN112397392B (en) | Bionic synaptic transistor and its preparing process | |
| CN111180582B (en) | Synaptic transistor based on electret and preparation method thereof | |
| CN111192938B (en) | Preparation and modulation method of photoelectric synapse device | |
| Wei et al. | Artificial synapses that exploit ionic modulation for perception and integration | |
| Liu et al. | Organic synaptic devices based on ionic gel with reduced leakage current | |
| CN111081875A (en) | Ferroelectric polarization regulated artificial synapse device and preparation method thereof | |
| CN112864164B (en) | Three-terminal artificial optical synapse and preparation method thereof | |
| CN112103388B (en) | Based on Ti 3 C 2 Preparation method of artificial synapse device with-MXene/electrolyte structure | |
| CN111834530B (en) | Two-end artificial synapse based on single crystal perovskite and preparation method thereof | |
| Liu et al. | Ecofriendly solution-combustion-processed thin-film transistors for synaptic emulation and neuromorphic computing | |
| CN112436060A (en) | Thin film transistor doped with potassium ions and preparation method thereof | |
| CN113035946A (en) | MXene-doped synapse type thin film transistor and preparation method thereof | |
| Cong et al. | Rational tuning of the cation ratio in metal oxide semiconductor nanofibers for low-power neuromorphic transistors | |
| CN114583053B (en) | All-solid-state organic electrochemical transistor and preparation method thereof | |
| Min et al. | Modulation of excitatory behavior by organic-inorganic hybrid electric-double-layers in polysilicon synaptic transistors | |
| Shen et al. | Application of artificial synapse based on Al-doped SrTiO3 thin film in neuromorphic computing | |
| CN112239195A (en) | Preparation method of artificial synapse electronic device based on nano oxide film/electrolyte vertical structure | |
| CN113903856A (en) | Novel memristor based on neural network visual perception, and preparation method and application thereof | |
| CN111146293B (en) | Based on AlOxNerve bionic device of double electric layer thin film transistor and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |