CN110382748B - 形成具有经改善的电阻率控制的单晶硅晶锭的方法 - Google Patents

形成具有经改善的电阻率控制的单晶硅晶锭的方法 Download PDF

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CN110382748B
CN110382748B CN201780080972.8A CN201780080972A CN110382748B CN 110382748 B CN110382748 B CN 110382748B CN 201780080972 A CN201780080972 A CN 201780080972A CN 110382748 B CN110382748 B CN 110382748B
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resistivity
gallium
ingot
dopant
melt
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CN110382748A (zh
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P·达葛卢
E·吉特林
R·斯坦德利
李衡敏
张楠
柳在佑
S·巴萨克
R·J·菲利普斯
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GlobalWafers Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201780080972.8A 2016-12-28 2017-12-28 形成具有经改善的电阻率控制的单晶硅晶锭的方法 Active CN110382748B (zh)

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US201662439743P 2016-12-28 2016-12-28
US62/439,743 2016-12-28
PCT/US2017/068632 WO2018125958A1 (en) 2016-12-28 2017-12-28 Methods for forming single crystal silicon ingots with improved resistivity control

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CN110382748B true CN110382748B (zh) 2021-07-02

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US (2) US10920337B2 (enExample)
JP (2) JP7365900B2 (enExample)
CN (1) CN110382748B (enExample)
TW (1) TWI745520B (enExample)
WO (1) WO2018125958A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10793969B2 (en) * 2018-06-27 2020-10-06 Globalwafers Co., Ltd. Sample rod growth and resistivity measurement during single crystal silicon ingot production
US10781532B2 (en) 2018-06-27 2020-09-22 Globalwafers Co., Ltd. Methods for determining the resistivity of a polycrystalline silicon melt
WO2020131458A1 (en) * 2018-12-21 2020-06-25 Globalwafers Co., Ltd. Sample rod center slab resistivity measurement during single crystal silicon ingot production
US11739437B2 (en) 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth
US11585010B2 (en) 2019-06-28 2023-02-21 Globalwafers Co., Ltd. Methods for producing a single crystal silicon ingot using boric acid as a dopant and ingot puller apparatus that use a solid-phase dopant
US20220359195A1 (en) * 2021-05-05 2022-11-10 Globalwafers Co., Ltd. Methods for forming an epitaxial wafer
CN115341271A (zh) * 2021-05-13 2022-11-15 内蒙古中环协鑫光伏材料有限公司 一种控制单晶电阻率轴向衰减速率的方法
US20230112094A1 (en) * 2021-10-11 2023-04-13 Globalwafers Co., Ltd. Modeling thermal donor formation and target resistivity for single crystal silicon ingot production
US12351938B2 (en) 2022-02-10 2025-07-08 Globalwafers Co., Ltd. Methods for producing a product ingot having low oxygen content
CN114690643B (zh) * 2022-05-31 2022-08-23 广东高景太阳能科技有限公司 基于掺镓单晶中镓含量的电阻率控制方法、系统及设备
CN115233292A (zh) * 2022-07-25 2022-10-25 北京麦竹吉科技有限公司 一种低电阻率硅单晶及其制备方法

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DE3049376A1 (de) 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
JPH1029894A (ja) * 1996-07-15 1998-02-03 Hitachi Ltd 単結晶シリコンの比抵抗調整方法および単結晶シリコン製造装置
JP2002226295A (ja) * 2001-01-31 2002-08-14 Shin Etsu Handotai Co Ltd チョクラルスキー法によるシリコン単結晶製造工程の管理方法及びチョクラルスキー法による高抵抗シリコン単結晶の製造方法並びにシリコン単結晶
US8021483B2 (en) * 2002-02-20 2011-09-20 Hemlock Semiconductor Corporation Flowable chips and methods for the preparation and use of same, and apparatus for use in the methods
US7635414B2 (en) 2003-11-03 2009-12-22 Solaicx, Inc. System for continuous growing of monocrystalline silicon
FR2929960B1 (fr) 2008-04-11 2011-05-13 Apollon Solar Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes
KR101841032B1 (ko) * 2010-09-03 2018-03-22 지티에이티 아이피 홀딩 엘엘씨 갈륨, 인듐 또는 알루미늄으로 도핑된 실리콘 단결정
CN102181919B (zh) * 2011-04-13 2012-12-26 天津市环欧半导体材料技术有限公司 一种控制直拉硅单晶头部电阻率的方法
KR20140097971A (ko) 2011-04-14 2014-08-07 지티 어드밴스드 씨제트 엘엘씨 균등한 다중 도판트들을 갖는 실리콘 잉곳 및 그 제조방법과 제조장치
CN102260900B (zh) 2011-07-14 2013-11-27 西安华晶电子技术股份有限公司 提高单晶硅纵向电阻率一致性的装置及其处理工艺
US20130047913A1 (en) * 2011-08-29 2013-02-28 Max Era, Inc. Method and Apparatus for Doping by Lane in a Multi-Lane Sheet Wafer Furnace
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CN105887194A (zh) * 2016-05-30 2016-08-24 上海超硅半导体有限公司 一种n型单晶硅的生长方法

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Publication number Publication date
JP2020503231A (ja) 2020-01-30
TW201840918A (zh) 2018-11-16
US20180179660A1 (en) 2018-06-28
WO2018125958A1 (en) 2018-07-05
US10920337B2 (en) 2021-02-16
CN110382748A (zh) 2019-10-25
JP2022180551A (ja) 2022-12-06
JP7365900B2 (ja) 2023-10-20
TWI745520B (zh) 2021-11-11
US20210071315A1 (en) 2021-03-11
US12024789B2 (en) 2024-07-02

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