CN110379861A - A kind of silicon carbide heterojunction diode power device - Google Patents
A kind of silicon carbide heterojunction diode power device Download PDFInfo
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- CN110379861A CN110379861A CN201910740008.4A CN201910740008A CN110379861A CN 110379861 A CN110379861 A CN 110379861A CN 201910740008 A CN201910740008 A CN 201910740008A CN 110379861 A CN110379861 A CN 110379861A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 125000005842 heteroatom Chemical group 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910021389 graphene Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 7
- 230000015556 catabolic process Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8613—Mesa PN junction diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention provides a kind of silicon carbide heterojunction diode power device.Heterojunction diode utilizes the band gap of different semiconductor materials, and performance has significant impact very close to ideal diode, to semiconductor technology.There is smaller conduction voltage drop for Conventional silicon carbide SBD and PiN diode, and different barrier potential differences can be formed by different doping on hetero junction layer and obtain different conduction voltage drops immediately.Therefore the present invention facilitates the turn-on consumption that power diode is greatly reduced.And the present invention does not generate to the breakdown reverse voltage of diode while reducing diode forward conduction voltage drop or only generates minimum influence.
Description
Technical field
This disclosure relates to semiconductor devices, and in particular to a kind of silicon carbide heterojunction semiconductor device.
Background technique
In power device field, compared to traditional material Si, SiC material has broader forbidden bandwidth, the pressure resistance of device
Characteristic and high-temperature stability can be more outstanding.The resistance to sparking of silicon carbide device can be excellent, therefore in identical electrical performance requirements
Under, silicon carbide device can possess the thickness thinner than silicon-based devices.Silicon carbide device has smaller conducting resistance simultaneously, thus
Forward conduction loss can be reduced, transfer efficiency is improved.
Schottky diode (SBD) conduction voltage drop is low, there is good switching characteristic.Its switching frequency is very high, Reverse recovery
Peak point current very little, the furthermore influence of temperature and forward current to its device performance can be ignored substantially.But the reversed resistance of SBD
Disconnected characteristic is poor, is not higher than 60V mostly, highest only about 100V, so that SBD be made to be difficult to apply to high pressure field.Bis- pole PiN
The blocking voltage of pipe is higher with respect to for SBD, while having lower reverse leakage, and the application that can satisfy under hyperbaric environment needs
It asks.However in high-frequency circuit, the time of PiN diode reverse recovery is long, and peak point current is big, and energy consumption is higher.
Summary of the invention
For the above technological deficiency, the present invention provides a kind of silicon carbide heterojunction diode power device.Two pole of hetero-junctions
Pipe utilizes the band gap of different semiconductor materials, and performance has semiconductor technology great very close to ideal diode
It influences.There is smaller conduction voltage drop for Conventional silicon carbide SBD and PiN diode, and can be on hetero junction layer
Different barrier potential differences, which is formed, by different doping obtains different conduction voltage drops immediately.Therefore the present invention helps to be greatly reduced
The turn-on consumption of power diode.And the present invention while reducing diode forward conduction voltage drop to the reverse breakdown of diode
Voltage does not generate or only generates minimum influence.
Realize the technical solution of the present invention is as follows:
The silicon carbide semiconductor body of first conduction type successively includes: the highly doped substrate zone of the first conduction type from top to bottom
(11), the first conduction type drift region (12), along heterojunction face present different levels of doping and the doping concentration period become
First conduction type doped region (115) of change and the wherein deeper second conduction type doped region (116) of injection of undoped spacer,
The variable hetero junction layer (13) of doping, wherein hetero junction layer constitutes hetero-junctions along contact surface together with semiconductor body.
Wherein, there are the first conduction type doped regions (12), at least one first kind are high at heterojunction face
Second conduction type doped region (116) of doped region (115) and at least one deeper doping.Wherein at heterojunction face
First type (115) and second type doped region (116) concentration are about 1e16 ~ 1e19cm-3。
Wherein, in the first conduction type doped region (115), the second conduction type doped region (116) and hetero junction layer (13)
Contact surface is equipped with contact berrier, and barrier height is between 0.3eV to 2.7eV.And the material for constructing hetero junction layer (13)
It can be polysilicon, crystal germanium, graphene etc..
As described above, the second conduction type is p-type doping when the first type conduction type is n-type doping, the first type is conductive
The second conduction type is n-type doping when type is p-type doping.
Detailed description of the invention
Fig. 1 is the cross-sectional view of silicon carbide heterojunction diode embodiment one of the present invention.
Fig. 2 is the cross-sectional view of silicon carbide heterojunction diode embodiment two of the present invention.
Fig. 3 is the cross-sectional view of silicon carbide heterojunction diode embodiment three of the present invention.
Fig. 4 is the cross-sectional view of silicon carbide heterojunction diode example IV of the present invention.
Specific embodiment
For the specific implementation present invention and further embody advantages of the present invention, a kind of specific implementation of the invention described below
Example is simultaneously in conjunction with the embodiments described in further details the present invention, but the embodiment of the not limited to this specific descriptions of the present invention.
It before the present invention is further explained, need to point out, the repeated description of similar elements has been omitted in figure, and legend is only shown
The part-structure of heterojunction diode, which can be repeated several times and attached drawing is not necessarily drawn to realize.
The present invention provides a kind of manufacture of silicon carbide heterojunction diode, includes the following steps:
RCA standard cleaning first is carried out to the first conductivity type silicon carbide substrate, then grows same lead on silicon carbide substrates front
The epitaxial layer of electric type, epitaxy layer thickness are 1 μm -200 μm, and doping concentration is 1e16 ~ 1e19cm-3.The SiO2 conduct of 2 μm of deposition
The barrier layer of first time ion implanting, and injection window for the first time is formed by lithography and etching.Followed by first time from
Son injection forms the second conduction type doped region with activation annealing.2 μm of SiO2 is deposited again as second ion implanting
Barrier layer, and second of ion implantation window is formed by lithography and etching.Followed by second of ion implanting and activation
Annealing forms the first conduction type high-doped zone.Growing polycrystalline silicon is later to form hetero-junctions.Using magnetron sputtering in gained device
Part two sides forms metal electrode, sets and carries out high annealing in obtained device and high-temp. annealing device to form Ohm contact electrode.
As shown in Figure 1, at least there is the highly doped of a first type conductive region at heterojunction face in embodiment one
Area 115, compared to low-doped drift region, highly doped regions is conducive to be promoted the forward characteristic of hetero-junctions, helps to reduce device
The forward voltage drop Vf of part promotes device forward conduction performance to reduce the conduction loss of device.
As shown in Figure 1, at least there is the deeper second conduction type doping of a doping depth at heterojunction face
Area 116, when applying reverse biased to device, the depletion region that the pn-junction that heterojunction face is formed by is formed expands to channel region
It dissipates, spaced pn-junction depletion layer is connected under biggish backward voltage, this depletion region shields schottky interface
Except High-Field, avoiding Schottky barrier reduces effect, greatly improves the pressure resistance of device, the breakdown voltage of resulting devices will
Close to the avalanche breakdown voltage of PiN structure.And because the injection depth of the second conduction type doped region is deeper, applying reverse biased
When the depletion layer that is formed by be easier to be connected to, significantly increase the pressure resistance of device.
As shown in Figure 1, the polysilicon 13 that device can be changed by doping concentration forms hetero-junctions, so can be according to different needs
Different forward voltage drops is obtained in turn to adjust the work function of polysilicon to adjust the barrier height of heterojunction.
Embodiment two and third is that embodiment one deformation.As Figure 2-3, the heterojunction diode contact shown in the present invention
Face doping does not need specific rule, other arrangements and package structure can also realize similar performance as shown in Fig. 2, first
It conduction type high-doped zone can be only in the side of the second conduction type doped region.Or as shown in figure 3, the first conduction type is highly doped
Area can be surrounded by epitaxial region.
Example IV at hetero-junctions as shown in figure 4, also can be the Doping of the first conduction type.Such as 117- in Fig. 4
118 structure doping concentrations successively decline, and further promote device performance by the multistage higher doping in ratio epitaxial region.
Claims (6)
1. a kind of silicon carbide heterojunction diode power device, comprising:
The silicon carbide semiconductor body of first conduction type successively includes: the highly doped substrate zone of the first conduction type from top to bottom
(11), the first conduction type drift region (12), along heterojunction face the first conduction type doped region (115) and among it
Every the deeper second conduction type doped region (116) of the injection of doping, variable hetero junction layer (13) are adulterated, wherein hetero junction layer
Hetero-junctions is constituted along contact surface together with semiconductor body.
2. silicon carbide heterojunction diode power device according to claim 1, it is characterised in that: in heterojunction face
Place there are the first conduction type drift region (12), at least one first conduction type doped region (115) and at least one deeper mix
The second miscellaneous conduction type doped region (116).
3. silicon carbide heterojunction diode power device according to claim 1, it is characterised in that: in heterojunction face
The first conduction type type doped region (115) at place and second conduction type type doped region (116) concentration are in 1e16 ~ 1e19cm-3It
Between.
4. silicon carbide heterojunction diode power device according to claim 1, it is characterised in that: first conductive-type
The contact surface of type doped region (115), the second conduction type doped region (116) and hetero junction layer (13) is equipped with contact berrier, gesture
Height is built between 0.3eV to 2.7eV.
5. silicon carbide heterojunction diode power device according to claim 1, it is characterised in that: for constructing hetero-junctions
The material of layer (13) can be polysilicon, crystal germanium, graphene etc..
6. silicon carbide heterojunction diode power device according to claim 1, it is characterised in that: the first type conduction type
When for n-type doping, the second conduction type is p-type doping；When first type conduction type is that p-type is adulterated, the second conduction type is N-type
Doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910740008.4A CN110379861A (en) | 2019-08-12 | 2019-08-12 | A kind of silicon carbide heterojunction diode power device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910740008.4A CN110379861A (en) | 2019-08-12 | 2019-08-12 | A kind of silicon carbide heterojunction diode power device |
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| CN110379861A true CN110379861A (en) | 2019-10-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013260A (en) * | 2021-02-23 | 2021-06-22 | 温州大学 | Photosensitive SiC heterogeneous junction multi-potential-barrier varactor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07254718A (en) * | 1992-12-24 | 1995-10-03 | Nippon Inter Electronics Corp | Semiconductor device |
| US20150144966A1 (en) * | 2013-11-26 | 2015-05-28 | Infineon Technologies Ag | Schottky diode with reduced forward voltage |
| CN107248533A (en) * | 2017-06-09 | 2017-10-13 | 电子科技大学 | A kind of carborundum VDMOS device and preparation method thereof |
| CN210325811U (en) * | 2019-08-12 | 2020-04-14 | 派恩杰半导体（杭州）有限公司 | Silicon carbide heterojunction diode power device |
-
2019
- 2019-08-12 CN CN201910740008.4A patent/CN110379861A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07254718A (en) * | 1992-12-24 | 1995-10-03 | Nippon Inter Electronics Corp | Semiconductor device |
| US20150144966A1 (en) * | 2013-11-26 | 2015-05-28 | Infineon Technologies Ag | Schottky diode with reduced forward voltage |
| CN107248533A (en) * | 2017-06-09 | 2017-10-13 | 电子科技大学 | A kind of carborundum VDMOS device and preparation method thereof |
| CN210325811U (en) * | 2019-08-12 | 2020-04-14 | 派恩杰半导体（杭州）有限公司 | Silicon carbide heterojunction diode power device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113013260A (en) * | 2021-02-23 | 2021-06-22 | 温州大学 | Photosensitive SiC heterogeneous junction multi-potential-barrier varactor |
| CN113013260B (en) * | 2021-02-23 | 2022-08-23 | 温州大学 | Photosensitive SiC heterogeneous junction multi-potential-barrier varactor |
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