CN110328561A - The preparation method of chemical and mechanical grinding method, system and metal plug - Google Patents
The preparation method of chemical and mechanical grinding method, system and metal plug Download PDFInfo
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- CN110328561A CN110328561A CN201810286262.7A CN201810286262A CN110328561A CN 110328561 A CN110328561 A CN 110328561A CN 201810286262 A CN201810286262 A CN 201810286262A CN 110328561 A CN110328561 A CN 110328561A
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- Prior art keywords
- grinding
- lapping liquid
- chemical mechanical
- chemical
- dielectric layer
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- 238000000227 grinding Methods 0.000 title claims abstract description 514
- 239000000126 substance Substances 0.000 title claims abstract description 431
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 303
- 239000002184 metal Substances 0.000 title claims abstract description 303
- 238000000034 method Methods 0.000 title claims abstract description 281
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 463
- 230000008569 process Effects 0.000 claims abstract description 222
- 239000000758 substrate Substances 0.000 claims abstract description 78
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 65
- 229910052721 tungsten Inorganic materials 0.000 claims description 58
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 57
- 239000010937 tungsten Substances 0.000 claims description 57
- 238000005259 measurement Methods 0.000 claims description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 36
- 239000007921 spray Substances 0.000 claims description 35
- 238000011049 filling Methods 0.000 claims description 34
- 230000010412 perfusion Effects 0.000 claims description 30
- 238000005498 polishing Methods 0.000 claims description 26
- 239000004094 surface-active agent Substances 0.000 claims description 26
- 239000002245 particle Substances 0.000 claims description 22
- 239000002002 slurry Substances 0.000 claims description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- 239000012530 fluid Substances 0.000 claims description 13
- 239000008187 granular material Substances 0.000 claims description 13
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 10
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 9
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 241000790917 Dioxys <bee> Species 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000001802 infusion Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 238000003801 milling Methods 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 444
- 239000000243 solution Substances 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 18
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 125000002091 cationic group Chemical group 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000001311 chemical methods and process Methods 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 4
- 238000003701 mechanical milling Methods 0.000 description 4
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 4
- 229910001930 tungsten oxide Inorganic materials 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000446 fuel Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000036632 reaction speed Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 208000005189 Embolism Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides the preparation method of chemical and mechanical grinding method, system and metal plug, and chemical and mechanical grinding method includes the following steps: 1) to provide the substrate for being formed with dielectric layer, is formed with metal layer on dielectric layer；2) substrate is subjected to first time chemical mechanical grinding, is covered in the partial metal layers of dielectric layer surface to remove, in first time chemical mechanical planarization process, lapping liquid is supplied with the first temperature；3) second of chemical mechanical grinding is carried out to substrate, completely removes the metal layer for remaining on dielectric layer surface, in second of chemical mechanical planarization process, lapping liquid is supplied with second temperature, and second temperature is less than the first temperature.The present invention not only can control milling time, save production cost, but also there is no recess at the top of the metal plug obtained after grinding, so that metal plug has lower resistance value.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, more particularly to a kind of chemical and mechanical grinding method, system and gold
Belong to the preparation method of plug.
Background technique
In existing semiconductor technology, chemical mechanical milling tech (CMP) is a very important process.With metal
For chemical mechanical polishing of tungsten technique (WCMP), in the preparation process that tungsten connects filling hole (CT), usually in oxide layer
Deep-wall type deep trouth is formed, then fills tungsten in the deep-wall type deep trouth, during filling, the surface of oxide layer
Also it can be deposited tungsten together；At this moment, it needs that oxidation layer surface will be located at by tungsten chemical mechanical milling tech
Tungsten removal, and only retain the tungsten in deep-wall type deep trouth as metal connecting line.Existing to packet as shown in Figure 1
It includes dielectric layer 10 and the through-hole filled up in the dielectric layer 10 and covers the knot to be ground of the tungsten layer 11 on 10 surface of dielectric layer
Structure carries out in the technique of chemical mechanical grinding, since lapping liquid is supplied with steady temperature, after grinding terminates, as shown in Fig. 2,
Can exist it is serious recess (Recess) phenomenon to get to the tungsten plug 12 top will form recess 13 exist, and
And since lapping liquid during the grinding process is very little, is formed and scratch the probability of defect and also greatly increase；The 12 top institute of tungsten plug
Presence meeting of recess 13 is stated so that the resistance value of tungsten plug 12 greatly increases, even more so as to have tungsten oxide scarce at the top of tungsten plug 12
Sunken generation, to significantly affect the performance of device.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of chemical and mechanical grinding method,
The preparation method of system and metal plug, for solve in the prior art due in chemical mechanical milling tech lapping liquid with constant
Temperature supply, if lapping liquid temperature it is excessively high be easy at the top of obtained metal plug formed recess and scratch defect and cause so that
The resistance value of tungsten plug greatly increases, thus the problem of influencing the performance of device.
To achieve the above object and other related purposes, the present invention provide a kind of chemical and mechanical grinding method, the chemistry
Mechanical grinding method includes the following steps:
1) substrate for being formed with dielectric layer is provided, is formed with metal layer on the dielectric layer；
2) substrate front surface is placed in progress first time chemical mechanical grinding on grinding pad downward, institute is covered in removal
State the part metal layer of dielectric layer surface, wherein in the first time chemical mechanical planarization process, lapping liquid is with the first temperature
The thickness of degree supply, the middle metal layer removed of step 2) accounts in step 1) metal for being covered in the dielectric layer surface
The 60%~99% of thickness degree, the dielectric layer surface has the remaining metal layer after step 2)；And
3) second of chemical mechanical grinding, after step 3), the remaining institute of dielectric layer surface are carried out to the substrate
State metal layer removal, wherein in second of chemical mechanical planarization process, the lapping liquid is supplied with second temperature, described
Second temperature is less than first temperature, so that the grinding rate of second of chemical mechanical grinding is less than the first time
Learn the grinding rate of mechanical lapping.
As a preferred solution of the present invention, the second temperature be less than first temperature at 20 degrees Celsius or more,
The grinding rate of second of chemical mechanical grinding is less than the grinding rate 40% of the first time chemical mechanical grinding.
As a preferred solution of the present invention, the metal layer includes tungsten layer.
As a preferred solution of the present invention, the metal layer further includes titanium nitride layer, and the titanium nitride layer is located at institute
It states between dielectric layer and the tungsten layer, described in the titanium nitride layer on the dielectric layer and part on the substrate
Dielectric layer is removed in step 3).
As a preferred solution of the present invention, the dielectric layer includes insulating oxide, and the gold after step 3)
Belong to layer and be formed as multiple metal plugs in the dielectric layer, the top surface of the metal plug is relative to medium described after grinding
The upper surface of layer is planar form or recess between 15 angstroms~150 angstroms.
As a preferred solution of the present invention, the lapping liquid includes cerium oxide particles, deionized water, surface-active
Agent and hydrogen peroxide, the mass percent of the hydrogen peroxide is between 2.5%~3.5%.
As a preferred solution of the present invention, the lapping liquid includes silica dioxide granule, deionized water, surface-active
Agent and hydrogen peroxide, between 1%~7%, the mass percent of the hydrogen peroxide is situated between the mass percent of the silica dioxide granule
In 1%~7%.
As a preferred solution of the present invention, the flow velocity of lapping liquid and institute in the first time chemical mechanical planarization process
The flow velocity for stating lapping liquid in second of chemical mechanical planarization process is identical, lapping liquid in the first time chemical mechanical planarization process
Flow velocity and second of chemical mechanical planarization process in lapping liquid flow velocity between 50 ml/mins~150 ml/mins
Clock.
As a preferred solution of the present invention, the flow velocity of lapping liquid and institute in the first time chemical mechanical planarization process
The flow velocity for stating lapping liquid in second of chemical mechanical planarization process is different, and grinds in second of chemical mechanical planarization process
The flow velocity of liquid is greater than the flow velocity of lapping liquid in the first time chemical mechanical planarization process.
As a preferred solution of the present invention, in the first time chemical mechanical planarization process lapping liquid flow velocity between
25 ml/mins~75 ml/mins, in second of chemical mechanical planarization process the flow velocity of lapping liquid between 100 milliliters/
Minute~200 ml/mins.
As a preferred solution of the present invention, first temperature is between 40 DEG C~45 DEG C；The second temperature between
10 DEG C~15 DEG C；The grinding rate of the first time chemical mechanical grinding is between 800 angstrom mins~2000 angstrom mins, and described
The metal that the grinding rate of secondary chemical mechanical grinding removes in 500 angstrom mins~1600 angstrom mins, step 2)
The thickness of layer accounts in step 1) the 70%~90% of the metal layer thickness for being covered in the dielectric layer surface.
The present invention also provides a kind of chemical and mechanical grinding method, the chemical and mechanical grinding method includes the following steps:
1) substrate for being formed with dielectric layer is provided, is formed with metal layer on the dielectric layer；
2) substrate front surface is placed in progress first time chemical mechanical grinding on grinding pad downward, institute is covered in removal
State the part metal layer of dielectric layer surface, wherein in the first time chemical mechanical planarization process, use the first lapping liquid
With the supply of the first temperature, the thickness of the metal layer removed in step 2), which accounts in step 1), is covered in the dielectric layer surface
The 60%~99% of the metal layer thickness, the dielectric layer surface has the remaining metal layer after step 2)；And
3) second of chemical mechanical grinding is carried out to the substrate, to remove in the metal of the dielectric layer surface
Layer, wherein in second of chemical mechanical planarization process, supplied using the second lapping liquid with second temperature, second temperature
Degree is less than first temperature, so that the grinding rate of second of chemical mechanical grinding is less than the first time chemical machinery
The grinding rate of grinding.
As a preferred solution of the present invention, the second temperature is less than 20 degrees Celsius of described first temperature or more, institute
The grinding rate for stating second of chemical mechanical grinding is less than the grinding rate 40% of the first time chemical mechanical grinding.
As a preferred solution of the present invention, the metal layer includes tungsten layer.
As a preferred solution of the present invention, the metal layer further includes titanium nitride layer, and the titanium nitride layer is located at institute
It states between dielectric layer and the tungsten layer, described in the titanium nitride layer on the dielectric layer and part on the substrate
Dielectric layer is removed in step 3).
As a preferred solution of the present invention, the dielectric layer includes insulating oxide, and the gold after step 3)
Belong to layer and be formed as multiple metal plugs in the dielectric layer, the top surface of the metal plug is relative to medium described after grinding
The upper surface of layer is planar form or recess between 15 angstroms~150 angstroms.
As a preferred solution of the present invention, first lapping liquid includes silica dioxide granule, deionized water, surface
Activating agent and hydrogen peroxide, second lapping liquid include cerium oxide particles, deionized water, surfactant and hydrogen peroxide.
As a preferred solution of the present invention, in first lapping liquid, the quality percentage of the silica dioxide granule
Than between 1%~7%, the mass percent of the hydrogen peroxide is between 1%~7%；In second lapping liquid, the hydrogen peroxide
Mass percent between 2.5%~3.5%.
As a preferred solution of the present invention, the flow velocity phase of the flow velocity of first lapping liquid and second lapping liquid
Together, the flow velocity of the flow velocity of second lapping liquid and first lapping liquid is between 50 ml/mins~150 ml/mins.
As a preferred solution of the present invention, the flow velocity of the flow velocity of first lapping liquid and second lapping liquid is not
Together, and the flow velocity of second lapping liquid be greater than first lapping liquid flow velocity.
As a preferred solution of the present invention, the flow velocity of first lapping liquid between 25 ml/min~75 milliliter/
Minute, the flow velocity of second lapping liquid is between 100 ml/mins~200 ml/mins.
As a preferred solution of the present invention, first temperature is between 40 DEG C~45 DEG C；The second temperature between
10 DEG C~15 DEG C；The grinding rate of the first time chemical mechanical grinding is between 800 angstrom mins~2000 angstrom mins, and described
The metal that the grinding rate of secondary chemical mechanical grinding removes in 500 angstrom mins~1600 angstrom mins, step 2)
The thickness of layer accounts in step 1) the 70%~90% of the metal layer thickness for being covered in the dielectric layer surface.
The present invention also provides a kind of chemical machinery polishing system, the chemical machinery polishing system includes:
Grinding plate；
Grinding pad, positioned at the upper surface of the grinding plate；
Grinding head is changed for suppressing device to be ground on the grinding pad positioned at the top of the grinding pad
Learn mechanical lapping；
Lapping slurry feeding system, for providing lapping liquid, the lapping slurry feeding system packet to the surface of the grinding pad
Include the first lapping liquid supply source, the second lapping liquid supply source, perfusion tube and spray head；Wherein, described perfusion tube one end and described the
One lapping liquid supply source and the second lapping liquid supply source are connected, and the other end is connected with the spray head, the spray head position
Above the grinding pad；And
Control module is connected with the lapping slurry feeding system, at least for adjust the lapping slurry feeding system to
The grinding pad provides the temperature of the lapping liquid.
As a preferred solution of the present invention, the control module includes first control unit, and first control is single
It is first to be connected with the first lapping liquid supply source and the second lapping liquid supply source, it is supplied for controlling first lapping liquid
The lapping liquid is provided to the grinding pad with the first temperature in first time chemical mechanical planarization process to source, and described in control
Second lapping liquid supply source provides the grinding to the grinding pad with second temperature in second of chemical mechanical planarization process
Liquid；Wherein, the second temperature is less than first temperature.
As a preferred solution of the present invention, the control module further includes the second control unit, second control
Unit is connected with the first lapping liquid supply source and the second lapping liquid supply source, for controlling first lapping liquid
Supply source provides the lapping liquid to the grinding pad with the first flow velocity in first time chemical mechanical planarization process, and controls institute
It states the second lapping liquid supply source and is ground with second flow speed to described in grinding pad offer in second of chemical mechanical planarization process
Grinding fluid；Wherein, the second flow speed is greater than first flow velocity.
As a preferred solution of the present invention, the chemical machinery polishing system further includes measurement module, the measurement
Module is connected with the first control unit and second control unit, for measuring the material removed in chemical process of lapping
The thickness of the bed of material, and measurement is fed back into the first control unit and second control unit；First control
Unit adjusts the temperature of the lapping liquid according to the measurement of the measurement module, and second control unit is according to described in
The measurement of measurement module adjusts the flow velocity of the lapping liquid.
As a preferred solution of the present invention, the perfusion tube includes the first perfusion tube and the second perfusion tube, the spray
Head includes first spray head and second spray head, wherein and first perfusion tube one end is connected with the first lapping liquid supply source,
The other end is connected with the first spray head,；Second perfusion tube one end is connected with the second lapping liquid supply source, separately
One end is connected with the second spray head；The control module is also used to adjust the lapping slurry feeding system to the grinding pad
The type of the lapping liquid of offer.
As a preferred solution of the present invention, the control module includes first control unit, and first control is single
It is first to be connected with the first lapping liquid supply source and the second lapping liquid supply source, it is supplied for controlling first lapping liquid
The first lapping liquid is provided to the grinding pad with the first temperature in first time chemical mechanical planarization process to source, and described in control
Second lapping liquid supply source provides the second grinding to the grinding pad with second temperature in second of chemical mechanical planarization process
Liquid；Wherein, the second temperature is less than first temperature.
As a preferred solution of the present invention, the control module further includes the second control unit, second control
Unit is connected with the first lapping liquid supply source and the second lapping liquid supply source, for controlling first lapping liquid
Supply source provides first lapping liquid to the grinding pad with the first flow velocity in first time chemical mechanical planarization process, and controls
It makes the second lapping liquid supply source and provides institute to the grinding pad with second flow speed in second of chemical mechanical planarization process
State the second lapping liquid；Wherein, the second flow speed is greater than first flow velocity.
As a preferred solution of the present invention, the chemical machinery polishing system further includes measurement module, the measurement
Module is connected with the first control unit and second control unit, for measuring the material removed in chemical process of lapping
The thickness of the bed of material, and measurement is fed back into the first control unit and second control unit；First control
Unit adjusts the lapping liquid that the lapping slurry feeding system is provided to the grinding pad according to the measurement of the measurement module
Type and lapping liquid temperature, and second control unit adjusts the lapping liquid according to the measuring structure of the measurement module and supplies
The lapping liquid type and grinding flow velocity provided to system to the grinding pad.
As a preferred solution of the present invention, the chemical machinery polishing system further includes grinding adjustment component (37),
The grinding adjustment component is for being during the grinding process adjusted the flatness of the grinding pad surface, the grinding adjustment
Component includes:
Mechanical arm；And
Adjustment plate is ground, the grinding adjustment plate is fixed on one end of the mechanical arm, in the mechanical arm
Drive under the flatness of the grinding pad surface is adjusted.
The present invention also provides a kind of preparation method of metal plug, the preparation method of the metal plug includes following step
It is rapid:
1) substrate is provided；
2) front of Yu Suoshu substrate forms dielectric layer；
3) filling hole is formed in Yu Suoshu dielectric layer；
4) metal layer is formed on Yu Suoshu dielectric layer, the metal layer fills up the filling hole and covers the dielectric layer table
Face；
5) that the substrate front surface that front is formed with the dielectric layer and the metal layer is placed in grinding pad downward is enterprising
Row first time chemical mechanical grinding, to remove the part metal layer for being covered in the dielectric layer surface, wherein described first
In secondary chemical mechanical planarization process, lapping liquid is supplied with the first temperature, and the thickness of the metal layer removed in step 5) accounts for step
It is rapid 4) in be covered in the dielectric layer surface the metal layer thickness 60%~99%, after step 5), the dielectric layer
Surface has the remaining metal layer；And
6) second of chemical mechanical grinding is carried out to the substrate and remains on the dielectric layer surface after step 6)
The metal layer completely removes, to obtain metal plug, wherein in second of chemical mechanical planarization process, lapping liquid with
Second temperature supply, the second temperature are less than first temperature, so that the grinding speed of second of chemical mechanical grinding
Rate is less than the grinding rate of the first time chemical mechanical grinding.
As a preferred solution of the present invention, step 4) includes the following steps:
4-1) titanium nitride layer is formed in the surface of the side wall in the filling hole, bottom and the dielectric layer；
4-2) surface of Yu Suoshu titanium nitride layer forms tungsten layer, and the tungsten layer fills up the filling hole and covers positioned at described
The surface of the titanium nitride layer of dielectric layer surface；Wherein, the sum of the titanium nitride layer on the dielectric layer is in the base
The part dielectric layer on bottom is removed in step 6).
As a preferred solution of the present invention, the metal plug has flat top after step 6), and the metal is inserted
The top surface of plug is recessed between 15 angstroms~150 angstroms relative to the upper surface of dielectric layer described after grinding.
As a kind of preferred embodiment of invention, in the first time chemical mechanical planarization process flow velocity of lapping liquid with it is described
The flow velocity of lapping liquid is identical in second of chemical mechanical planarization process, lapping liquid in the first time chemical mechanical planarization process
The flow velocity of lapping liquid is between 50 ml/mins~150 ml/mins in flow velocity and second of chemical mechanical planarization process
Clock.
As a preferred solution of the present invention, the flow velocity of lapping liquid and institute in the first time chemical mechanical planarization process
The flow velocity for stating lapping liquid in second of chemical mechanical planarization process is different, and grinds in second of chemical mechanical planarization process
The flow velocity of liquid is greater than the flow velocity of lapping liquid in the first time chemical mechanical planarization process, the first time chemical mechanical grinding mistake
The flow velocity of lapping liquid is ground in 25 ml/mins~75 ml/mins, second of chemical mechanical planarization process in journey
The flow velocity of liquid is between 100 ml/mins~200 ml/mins.
As a preferred solution of the present invention, the lapping liquid in the first time chemical mechanical planarization process and described the
Lapping liquid in secondary chemical mechanical planarization process is identical.
As a preferred solution of the present invention, the lapping liquid in the first time chemical mechanical planarization process and described the
Lapping liquid in secondary chemical mechanical planarization process is different.
As a preferred solution of the present invention, first temperature is between 40 DEG C~45 DEG C；The second temperature between
10 DEG C~15 DEG C；The grinding rate of the first time chemical mechanical grinding is between 800 angstrom mins~2000 angstrom mins, and described
The metal that the grinding rate of secondary chemical mechanical grinding removes in 500 angstrom mins~1600 angstrom mins, step 5)
The thickness of layer accounts in step 4) the 70%~90% of the metal layer thickness for being covered in the dielectric layer surface.
As described above, the preparation method of chemical and mechanical grinding method provided by the invention, system and metal plug, have with
It is lower the utility model has the advantages that
In chemical and mechanical grinding method of the invention, ground by the temperature of setting grinding lapping liquid early period greater than the grinding later period
The temperature of grinding fluid, the temperature height of phase lapping liquid can quickly remove the metal layer being predominantly located on dielectric layer before the milling,
The grinding later period only needs to remove the remaining metal layer in few part, and grinding later period lapping liquid temperature is relatively low, to metal
The removal of layer is slow, and the rate of lapping liquid removal metal layer is roughly the same with the removal rate of dielectric layer, both can control
Milling time saves production cost, reduces scratch defect, and can be recessed to avoid being formed at the top of the metal plug obtained after grinding
It falls into, so that metal plug has lower resistance value, it is ensured that the performance of structure.
Detailed description of the invention
Fig. 1 is shown as partial cross section's structural schematic diagram of structure to be ground in the prior art.
Fig. 2 is shown as being formed with recess at the top of the metal plug obtained after chemical mechanical milling tech in the prior art
Partial cross section's structural schematic diagram.
Fig. 3 is shown as the flow chart of the chemical and mechanical grinding method provided in the embodiment of the present invention one.
Fig. 4 is shown as the structure provided in the step 1) of the chemical and mechanical grinding method provided in the embodiment of the present invention one
Partial cross section's structural schematic diagram.
Fig. 5 and Fig. 6 is tied after being shown as the step 2) of the chemical and mechanical grinding method provided in the embodiment of the present invention one
Partial cross section's structural schematic diagram of structure.
Fig. 7 obtains the office of structure after being shown as the step 3) of the chemical and mechanical grinding method provided in the embodiment of the present invention one
Portion's cross section structure schematic diagram.
Fig. 8 is shown as the flow chart of the chemical and mechanical grinding method provided in the embodiment of the present invention two.
Fig. 9 and Figure 10 is shown as the structural schematic diagram of the chemical machinery polishing system provided in the embodiment of the present invention three.
Figure 11 is shown as the flow chart of the preparation method of the metal plug provided in the embodiment of the present invention four.
Figure 12 to Figure 19 is shown as the corresponding knot of each step of preparation method of the metal plug provided in the embodiment of the present invention four
The cross section structure schematic diagram of structure.
Reference numerals explanation
10 dielectric layers
11 tungsten layers
12 tungsten plugs
13 recess
20 substrates
21 dielectric layers
211 filling holes
22 metal layers
221 tungsten layers
The tungsten layer removed in 2211 first time chemical mechanical grindings
The remaining tungsten layer of dielectric layer surface after 2212 first time chemical mechanical grindings
222 titanium nitride layers
23 metal plugs
31 grinding plates
32 grinding pads
33 grinding heads
34 lapping slurry feeding systems
3411 first lapping liquid supply sources
3412 second lapping liquid supply sources
342 perfusion tubes
3421 first perfusion tubes
3422 second perfusion tubes
343 spray heads
3431 first spray heads
3432 second spray heads
35 control modules
351 first control units
352 second control units
36 measurement modules
37 grinding adjustment components
371 mechanical arms
372 grinding adjustment plates
The thickness of the metal layer removed in d1 first step chemical mechanical planarization process
D2 is covered in the thickness of the metal layer of dielectric layer surface
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands further advantage and effect of the invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 3 is please referred to Figure 19.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only show in diagram with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation form, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout form may also be increasingly complex.
Embodiment one
Referring to Fig. 3, the present invention provides a kind of chemical and mechanical grinding method, the chemical and mechanical grinding method includes as follows
Step:
1) substrate for being formed with dielectric layer is provided, is formed with metal layer on the dielectric layer；
2) substrate front surface is placed in progress first time chemical mechanical grinding on grinding pad downward, institute is covered in removal
State the part metal layer of dielectric layer surface, wherein in the first time chemical mechanical planarization process, lapping liquid is with the first temperature
The thickness of degree supply, the middle metal layer removed of step 2) accounts in step 1) metal for being covered in the dielectric layer surface
The 60%~99% of thickness degree, the dielectric layer surface has the remaining metal layer after step 2)；And
3) second of chemical mechanical grinding, after step 3), the remaining institute of dielectric layer surface are carried out to the substrate
State metal layer removal, wherein in second of chemical mechanical planarization process, the lapping liquid is supplied with second temperature, described
Second temperature is less than first temperature, so that the grinding rate of second of chemical mechanical grinding is less than the first time
Learn the grinding rate of mechanical lapping.
In step 1), S11 step and Fig. 4 in Fig. 3 are please referred to, the substrate 20 for being formed with dielectric layer 21 is provided, it is described
Metal layer 22 is formed on dielectric layer 21.
As an example, the substrate 20 can be any one substrate, for example silicon base, sapphire substrates or gallium nitride base
Bottom etc..The function element that electricity in need is drawn is formed in the substrate 20, for example MOS device etc..
As an example, the material of the dielectric layer 21 may include silica (SiOx) or silicon nitride (SiN) etc..
As an example, the dielectric layer 21 further includes insulating oxide.
As an example, the metal layer 22 can only include tungsten layer 221, the tungsten layer 221 can be heavy using physical vapor
The product formation such as technique or chemical vapor deposition process.
As an example, filling hole can also be formed in the dielectric layer 21 as shown in Figure 4.Certainly, in other examples,
Also other sagging patterns be could be formed in the dielectric layer 21.
As an example, the metal layer 22 can also include tungsten (W) layer 221 and titanium nitride (TiN) layer 222 such as Fig. 4；Its
In, the titanium nitride layer 222 is located at side wall and the bottom in the filling hole, and extends to the dielectric layer 21 by the filling hole
Surface, and cover the surface of the dielectric layer 21；The tungsten layer 221 is located at the upper surface of the titanium nitride layer 222, the tungsten
Layer 221 fills up the filling hole and covers the surface for being located at the titanium nitride layer 222 on 21 surface of dielectric layer.
Certainly, in other examples, the metal layer 22 may also include any other metal plug that can form conduction
23 metal layer, for example at least one of layers of copper, tin layers, titanium layer, nickel layer, silver layer or layer gold.
In step 2), the S12 step and Fig. 5 and Fig. 6 in Fig. 3 are please referred to, 20 face down of substrate is placed in and is ground
First time chemical mechanical grinding is carried out on mill pad, to remove the part metal layer 22 for being covered in 21 surface of dielectric layer,
Wherein, in the first time chemical mechanical planarization process, lapping liquid is supplied with the first temperature, the metal removed in step 2)
The thickness d 1 of layer 22 accounts in step 1) the 60%~99% of 22 thickness d 2 of the metal layer for being covered in 21 surface of dielectric layer,
21 surface of dielectric layer has the remaining metal layer 22 after step 2).
It should be noted that be that device to be ground is fixed on a grinding head in chemical mechanical planarization process, it is described to grind
The device to be ground is pressed on the grinding pad positioned at a grinding plate upper surface by bistrique, and lapping slurry feeding system is in Xiang Suoshu
On grinding pad while jet grinding liquid, the grinding plate drives the grinding pad rotation, the grinding head drive it is described to
Grinding elements does the rotation opposite with the grinding pad direction of rotation, to grind to the device to be ground.
As an example, what the lapping liquid used in the step can grind substrate 20 for any one
Lapping liquid, for example, comprising silica (SiOx) particle lapping liquid or include ceria (CeO2) particle lapping liquid.
In one example, the lapping liquid includes cerium oxide particles, deionized water, surfactant and hydrogen peroxide
(H2O2)；The ratio of each component can be set according to actual needs in the lapping liquid；Preferably, described in the present embodiment
The mass percent of hydrogen peroxide is between 2.5%~3.5%；The surfactant includes cationic surface active agent.
In another example, the lapping liquid can also include silica dioxide granule, deionized water, surfactant and double
Oxygen water；The ratio of each component can be set according to actual needs in the lapping liquid；Preferably, described in the present embodiment
In lapping liquid, the mass percent of the silica dioxide granule between 1%~7%, the mass percent of the hydrogen peroxide between
1%~7%；The surfactant includes cationic surface active agent.
As an example, in this step, the temperature of the lapping liquid is relatively high, it is preferable that described in the present embodiment
First temperature is between 40 DEG C~45 DEG C, i.e., in the described first time chemical mechanical planarization process, self-grind system is to the grinding pad
The temperature of the lapping liquid of injection is between 40 DEG C~45 DEG C.It is main to remove in the first time chemical mechanical planarization process
Chemical reaction (Chemical can occur with the lapping liquid for the metal layer 22, the metal layer 22 (for example, tungsten metal layer)
Reaction), the grinding removal rate (Removal Rate) of the metal layer 22 is influenced by the temperature of the lapping liquid deeply,
The temperature of the lapping liquid is higher, gets in the first time chemical mechanical planarization process to the rate of the metal layer 22 removal
It is high.Again due to containing hydrogen peroxide in the lapping liquid, when lapping liquid temperature is higher, the metal layer 22 and the lapping liquid
Chemical reaction is stronger, so that grinding rate is very fast.It is tungsten layer 221 as an example, ground with the metal layer 22
Cheng Zhong, under the action of fuel factor, tungsten layer 221 can be reacted with the hydrogen peroxide in the lapping liquid to be generated tungsten oxide and is removed,
Also, the temperature of the lapping liquid is higher, and the temperature in process of lapping is higher, and the reaction speed is faster, that is, removes the metal
The rate of layer 22 is faster.
As an example, the thickness of the metal layer 22 removed in the first time chemical mechanical planarization process can basis
Actual needs is set, since the first flow velocity of the lapping liquid in this step is smaller, so that the grinding speed of the step
Rate, in order to reduce total milling time, improves grinding efficiency, save the cost, the metal removed in this step than very fast
The thickness of layer 22 can be significantly greater than the thickness of the metal layer 22 removed in process of lapping in subsequent step；Preferably, originally
In embodiment, the thickness d 1 of the metal layer 22 removed in the first time chemical mechanical planarization process, which accounts for be covered in, to be given an account of
The 70%~90% of 22 thickness d 2 of the metal layer on 21 surface of matter layer.It is specific as shown in Figures 5 and 6, first time chemical machine
The tungsten layer 2211 removed in tool grinding with a thickness of dotted line shadow region in such as Fig. 5, structure such as Fig. 6 institute for being obtained after the step
Show, the remained on surface of the dielectric layer 21 has tungsten layer 2212.
In step 3), S13 step and Fig. 7 in Fig. 3 are please referred to, second of chemical machinery is carried out to the substrate 20 and is ground
Mill, after step 3), the metal layer 22 on 21 surface of dielectric layer is removed, wherein second of chemical mechanical grinding
In the process, the lapping liquid is supplied with second temperature, and the second temperature is less than first temperature, so that described second is changed
The grinding rate for learning mechanical lapping is less than the grinding rate of the first time chemical mechanical grinding.
Specifically, in step 3), in the titanium nitride layer 222 on the dielectric layer 21 and in the substrate 20
The partial dielectric layer 21 is removed.After step 3), the metal layer 22 of reservation is formed as multiple in the dielectric layer
Metal plug 23 in 21, at this point, the top surface of the metal plug 23 is relative to the upper surface of dielectric layer 21 described after grinding
Planar form is being recessed between 15 angstroms~150 angstroms.
As an example, second of chemical mechanical grinding in the step and first time chemistry machine described in step 2)
Tool grinding carries out on same milling apparatus, more specifically, second of chemical mechanical grinding and step in the step
2) first time chemical mechanical grinding described in is a continuous process of lapping, only need to the first time chemical mechanical grinding it
The temperature for adjusting the lapping liquid afterwards can carry out second of chemical mechanical grinding, specifically, can be by using two
The lapping liquid of different lapping liquid supply source supply different temperatures.In the present embodiment, second of chemistry described in the step
The ingredient of lapping liquid used in first time chemical mechanical grinding described in lapping liquid used in mechanical lapping and step 2)
It is identical.
As an example, the second temperature is less than 20 degrees Celsius of first temperature (DEG C) or more, second of chemistry
The grinding rate of mechanical lapping is less than the grinding rate 40% of the first time chemical mechanical grinding；Preferably, in the present embodiment,
Under the premise of first temperature is between 40 DEG C~45 DEG C, the second temperature is between 10 DEG C~15 DEG C；The first time
The grinding rate of mechanical lapping is learned between 800 angstrom mins~2000 angstrom mins, the grinding of second of chemical mechanical grinding
Rate is between 500 angstrom mins~1600 angstrom mins.Lapping liquid in second of chemical mechanical grinding as described in the step
Temperature significantly lower than lapping liquid in first time chemical mechanical grinding described in step 2) temperature, it is described to grind in the process of lapping
Grinding fluid temperature is lower, and the chemical reaction between the lapping liquid and the metal layer 22 becomes very slow or even the two will not
Apparent chemical reaction occurs, at this point, the effect for only relying on mechanical lapping removes the metal layer 22.Although the step is described
The rate that the metal layer 22 is removed in second of chemical mechanical planarization process is slow, but as first described in step 2)
The metal layer 22 of the overwhelming majority, the gold for needing to remove in the step have been had been removed in secondary chemical mechanical planarization process
Belong to layer 22 and only account for the thickness 10%~30% for needing the metal layer 22 removed, so the time-consuming in entire process of lapping is also
It is very short, it can be ensured that grinding efficiency with higher.
It should be noted that the metal layer 22 after step 3) in the filling hole is separated into flat top
Embolism kenel, in second of chemical mechanical planarization process described in step 3), remain on 21 table of dielectric layer in removal
After the metal layer 22 in face, it may also will continue to the grinding removal part dielectric layer 21 and part is located at the dielectric layer
The metal layer 22 in the filling hole in 21, but as being ground described in second of chemical mechanical planarization process
The temperature of liquid is relatively low, and the lapping liquid hardly reacts with the metal layer 22, and the lapping liquid removes the gold
Belong to the rate of layer 22 and the rate for removing the dielectric layer 21 is very nearly the same, it is almost the same, therefore, in described second chemical machine
The structure of metal plug 23 that obtains after tool grinding will not go out as shown in fig. 7, the top of the metal plug 23 is a flat surface
Now as in the prior art it is shown in Fig. 2 recess 13.
It should be further noted that when, without the filling hole, the metal layer 22 is formed in the dielectric layer 21
When the surface of the dielectric layer 21, after step 3), the metal layer 22 positioned at 21 surface of dielectric layer can be gone completely
It removes.
In one example, the flow velocity of lapping liquid described in first time chemical mechanical planarization process described in step 2) can be with
The flow velocity of lapping liquid described in second of chemical mechanical planarization process described in step 3) is identical, i.e., the described first time chemical machinery
The flow velocity of process of lapping and lapping liquid described in second of chemical mechanical planarization process remains unchanged.At this point, described first
In secondary chemical mechanical planarization process and the flow velocity of lapping liquid described in second of chemical mechanical planarization process can be between 50
Ml/min~150 ml/mins, it is preferable that in the first time chemical mechanical planarization process and described in the present embodiment
The flow velocity of lapping liquid described in second of chemical mechanical planarization process is preferably 100 ml/mins.
In another example, the flow velocity of lapping liquid described in first time chemical mechanical planarization process described in step 2) can be with
It is different from the flow velocity of lapping liquid described in second of chemical mechanical planarization process described in step 3), i.e., the described first time chemistry machine
After tool grinding, the flow velocity for needing to adjust the lapping liquid carries out second of chemical mechanical grinding again.Preferably, described
The flow velocity of lapping liquid is greater than the stream of lapping liquid in the first time chemical mechanical planarization process in secondary chemical mechanical planarization process
Speed is surface-treated the by-product generated in temperature and quickly discharge process of lapping to reduce the dielectric layer 21；It is further preferable that
In the present embodiment, the flow velocity of lapping liquid is between 25 ml/mins~75 ml/mins in the first time chemical mechanical planarization process
Clock, the flow velocity of lapping liquid is between 100 ml/mins~200 ml/mins in second of chemical mechanical planarization process.By
The flow velocity of lapping liquid is apparently higher than the chemistry of first time described in step 2) in second of chemical mechanical grinding described in the step
The flow velocity of lapping liquid in mechanical lapping, the temperature of the lapping liquid in second of chemical mechanical planarization process can be compared to
Temperature is lower when low flow velocity, and the chemical reaction between the lapping liquid and the metal layer 22 further becomes more slowly, very
It will not occur significantly to chemically react to the two, at this point, the effect for only relying on mechanical lapping removes the metal layer 22.
In chemical and mechanical grinding method of the invention, by setting lapping liquid in the first time chemical mechanical planarization process
Temperature be greater than second of chemical mechanical planarization process in lapping liquid temperature, the temperature height of phase lapping liquid can before the milling
It is predominantly located in the metal layer 22 on the dielectric layer 21 with quick removal, the phase only needs to remove few part after grinding
The remaining metal layer 22, but grinding later period lapping liquid temperature is relatively low, it is slow to the removal of the metal layer 22,
And to remove the rate of the metal layer 22 roughly the same with the rate for removing the dielectric layer 21 for the lapping liquid, both can control
Milling time saves production cost, reduces scratch defect, and can be to avoid 23 top of the metal plug obtained after grinding
Recess is formed, so that metal plug 23 has lower resistance value, it is ensured that the performance of structure.
Embodiment two
Incorporated by reference to Fig. 4 to Fig. 7 refering to Fig. 8, the present invention also provides a kind of chemical and mechanical grinding method, the chemical machinery is ground
Mill method includes the following steps:
1) substrate for being formed with dielectric layer is provided, is formed with metal layer on the dielectric layer；
2) substrate front surface is placed in progress first time chemical mechanical grinding on grinding pad downward, institute is covered in removal
State the part metal layer of dielectric layer surface, wherein in the first time chemical mechanical planarization process, use the first lapping liquid
With the supply of the first temperature, the thickness of the metal layer removed in step 2), which accounts in step 1), is covered in the dielectric layer surface
The 60%~99% of the metal layer thickness, the dielectric layer surface has the remaining metal layer after step 2)；And
3) second of chemical mechanical grinding is carried out to the substrate, to remove in the metal of the dielectric layer surface
Layer, wherein in second of chemical mechanical planarization process, supplied using the second lapping liquid with second temperature, second temperature
Degree is less than first temperature, so that the grinding rate of second of chemical mechanical grinding is less than the first time chemical machinery
The grinding rate of grinding.
In step 1), S21 step and Fig. 4 in Fig. 8 are please referred to, the substrate 20 for being formed with dielectric layer 21 is provided, it is described
Metal layer 22 is formed on dielectric layer 21.
As an example, the substrate 20 can be any one substrate, for example silicon base, sapphire substrates or gallium nitride base
Bottom etc..The function element that electricity in need is drawn is formed in the substrate 20, for example MOS device etc..
As an example, the material of the dielectric layer 21 may include silica (SiOx) or silicon nitride (SiN) etc..
As an example, the dielectric layer 21 further includes insulating oxide.
As an example, the metal layer 22 can only include tungsten layer 221, the tungsten layer 221 can be heavy using physical vapor
The product formation such as technique or chemical vapor deposition process.
As an example, filling hole can also be formed in the dielectric layer 21 as shown in Figure 4.Certainly, in other examples,
Also other sagging patterns be could be formed in the dielectric layer 21.
As an example, the metal layer 22 can also include tungsten (W) layer 221 and titanium nitride (TiN) layer 222 such as Fig. 4；Its
In, the titanium nitride layer 222 is located at side wall and the bottom in the filling hole, and extends to the dielectric layer 21 by the filling hole
Surface, and cover the surface of the dielectric layer 21；The tungsten layer 221 is located at the upper surface of the titanium nitride layer 222, the tungsten
Layer 221 fills up the filling hole and covers the surface for being located at the titanium nitride layer 222 on 21 surface of dielectric layer.
Certainly, in other examples, the metal layer 22 may also include any other metal plug that can form conduction
23 metal layer, for example at least one of layers of copper, tin layers, titanium layer, nickel layer, silver layer or layer gold.
In step 2), the S22 step and Fig. 5 to Fig. 6 in Fig. 8 are please referred to, 20 face down of substrate is placed in and is ground
First time chemical mechanical grinding is carried out on mill pad, to remove the part metal layer 22 for being covered in 21 surface of dielectric layer,
Wherein, it in the first time chemical mechanical planarization process, is supplied using the first lapping liquid with the first temperature, is removed in step 2)
The thickness d 1 of the metal layer 22 accounts in step 1) 22 thickness d 2 of the metal layer for being covered in 21 surface of dielectric layer
60%~99%, 21 surface of dielectric layer has the remaining metal layer 22 after step 2).
It should be noted that be that 20 face down of institute's substrate is fixed on a grinding head in chemical mechanical planarization process,
The substrate 20 is pressed on the grinding pad positioned at a grinding plate upper surface by the grinding head, and lapping slurry feeding system is to institute
It states while spray first lapping liquid on grinding pad, the grinding plate drives the grinding pad rotation, the grinding head
The substrate 20 is driven to do the rotation opposite with the grinding pad direction of rotation, to the metal layer 22 in the substrate 20
It is ground.
As an example, first lapping liquid is during the first time chemical mechanical grinding with first temperature
When supply, the first time chemical mechanical grinding to the grinding rate of the metal layer 22 between 800 angstrom min~2000 angstrom/
Minute.
As an example, first lapping liquid used in the step can grind substrate 20 for any one
The lapping liquid of mill includes for example the lapping liquid of silica (SiOx) particle；Preferably, the first lapping liquid can choose have compared with
High metal selects the lapping liquid of ratio, and to improve grinding efficiency, in the present embodiment, first lapping liquid preferably comprises silica
Particle, deionized water, surfactant and hydrogen peroxide (H2O2).The ratio of each component can be according to reality in first lapping liquid
Border is set.Preferably, in the present embodiment, the mass percent of the silica dioxide granule is between 1%~7%, institute
The mass percent of hydrogen peroxide is stated between 1%~7%.The surfactant includes cationic surface active agent.
As an example, in this step, the temperature of first lapping liquid is relatively high, it is preferable that in the present embodiment,
First temperature is between 40 DEG C~45 DEG C, i.e., in the described first time chemical mechanical planarization process, self-grind system is ground to described
The temperature of first lapping liquid of mill pad injection is between 40 DEG C~45 DEG C.In the first time chemical mechanical planarization process,
The metal layer 22 is mainly removed, it is anti-that with first lapping liquid chemistry can occur for the metal layer 22 (for example, tungsten metal layer)
It answers (Chemical reaction), the grinding removal rate (Removal Rate) of the metal layer 22 is ground by described first deeply
The temperature of the influence of the temperature of grinding fluid, first lapping liquid is higher, to described in the first time chemical mechanical planarization process
The rate that metal layer 22 removes is higher.Again due to containing hydrogen peroxide in first lapping liquid, when the first lapping liquid temperature
When higher, the chemical reaction of the metal layer 22 and first lapping liquid is stronger, so that grinding rate is very fast.With institute
Stating metal layer 22 is tungsten layer 221 as an example, during the grinding process, under the action of fuel factor, tungsten layer can be ground with described first
Hydrogen peroxide reaction in grinding fluid generates tungsten oxide and is removed, also, the temperature of first lapping liquid is higher, in process of lapping
Temperature it is higher, the reaction speed is faster, that is, the rate for removing the metal layer 22 is faster.
As an example, the thickness of the metal layer 22 removed in the first time chemical mechanical planarization process can basis
Actual needs is set, since the first flow velocity of first lapping liquid in this step is smaller, so that the step is ground
It is very fast to grind speed ratio, in order to reduce total milling time, improves grinding efficiency, save the cost, what is removed in this step is described
The thickness of metal layer 22 can be significantly greater than the thickness of the metal layer 22 removed in process of lapping in subsequent step；It is preferred that
Ground, in the present embodiment, the thickness d 1 of the metal layer 22 removed in the first time chemical mechanical planarization process, which accounts for, to be covered in
The 70%~90% of 22 thickness d 2 of the metal layer on 21 surface of dielectric layer.
In step 3), S23 step and Fig. 7 in Fig. 8 are please referred to, second of chemical machinery is carried out to the substrate 20 and is ground
Mill, to remove the metal layer 22 on 21 surface of dielectric layer, wherein in second of chemical mechanical planarization process, make
It is supplied with the second lapping liquid with second temperature, the second temperature is less than first temperature, so that second of chemical machine
The grinding rate of tool grinding is less than the grinding rate of the first time chemical mechanical grinding.
Specifically, in step 3), in the titanium nitride layer 222 on the dielectric layer 21 and in the substrate 20
The partial dielectric layer 21 is removed.After step 3), the metal layer 22 of reservation is formed as multiple in the dielectric layer
Metal plug 23 in 21, at this point, the top surface of the metal plug 23 is relative to the upper surface of dielectric layer 21 described after grinding
Planar form is being recessed between 15 angstroms~150 angstroms.
As an example, second of chemical mechanical grinding in the step and first time chemistry machine described in step 2)
Tool grinding carries out on same milling apparatus, more specifically, second of chemical mechanical grinding and step in the step
2) the first time chemical mechanical grinding described in is a continuous process of lapping, only need to be in the first time chemical mechanical grinding
When using the first perfusion tube and first spray head first lapping liquid is sprayed with first temperature, in the first time chemistry
The second perfusion tube and second spray head is used after mechanical lapping instead to grind with the second temperature to grinding pad sprinkling described second
Grinding fluid can carry out second of chemical mechanical grinding.In the present embodiment, the first lapping liquid and the second lapping liquid ingredient are different.
As an example, second lapping liquid used in the step can grind substrate 20 for any one
The lapping liquid of mill, for example, comprising silica (SiOx) particle grinding or include ceria (CeO2) particle lapping liquid；It is excellent
Selection of land, the second lapping liquid can choose with the lapping liquid compared with low metal selection ratio, insert to avoid the metal obtained after grinding
Recess is formed on 23 top of plug, and second lapping liquid is selected from the lapping liquid comprising cerium oxide particles；It is further preferable that this reality
It applies in example, second lapping liquid includes cerium oxide particles, deionized water, surfactant and hydrogen peroxide.Described second grinds
The ratio of each component can be set according to actual needs in grinding fluid.Preferably, in the present embodiment, second lapping liquid
In, the mass percent of the hydrogen peroxide is between 2.5%~3.5%.The surfactant includes cationic surfactant
Agent.It should be noted that in the present embodiment, under the grinding conditions such as identical flow velocity and grinding pressure, described in the step
Make in second lapping liquid used in secondary chemical mechanical grinding and the first time chemical mechanical grinding described in step 2)
First lapping liquid has different grinding rates；Preferably, in the present embodiment, in identical flow velocity and grinding pressure
Under equal grinding conditions, the grinding rate of second lapping liquid used in second of chemical mechanical grinding described in the step is small
The grinding rate of first lapping liquid used in first time chemical mechanical grinding described in step 2).It needs further
Illustrate, described in second lapping liquid used in second of chemical mechanical grinding described in the step and step 2)
First lapping liquid used in first time chemical mechanical grinding in addition to can it is as described above different other than, can also be institute
Stating the first lapping liquid includes silica dioxide granule, and second lapping liquid includes cerium oxide particles；Or described the
The component materials that one lapping liquid includes are identical as the component materials that second lapping liquid includes, but each in first lapping liquid
The content of component materials is different from the content of each component substance in second lapping liquid.
As an example, the second temperature is less than 20 degrees Celsius of described first temperature or more, second of chemical machinery
The grinding rate of grinding is less than the grinding rate 40% of the first time chemical mechanical grinding；Preferably, in the present embodiment, in institute
The first temperature is stated under the premise of 40 DEG C~45 DEG C, the second temperature is between 10 DEG C~15 DEG C；The first time chemistry machine
The grinding rate of tool grinding is between 800 angstrom mins~2000 angstrom mins, the grinding rate of second of chemical mechanical grinding
Between 500 angstrom mins~1600 angstrom mins.Second grinding described in second of chemical mechanical grinding as described in the step
For the temperature of liquid significantly lower than the temperature of the first lapping liquid described in first time chemical mechanical grinding described in step 2), this is ground
Cheng Zhong, the second lapping liquid temperature is lower, and the chemical reaction between second lapping liquid and the metal layer 22 becomes non-
Often slow or even the two will not occur significantly to chemically react, at this point, the effect for only relying on mechanical lapping removes the metal layer
22.Although the rate for removing the metal layer 22 in second of chemical mechanical planarization process of the step is slow, by
The metal layer 22 of the overwhelming majority, the step have been had been removed in the first time chemical mechanical planarization process described in step 2)
The metal layer 22 for needing to remove in rapid only accounts for the thickness 10%~30% for needing the metal layer 22 removed, so entirely
Time-consuming in process of lapping is also very short, it can be ensured that grinding efficiency with higher.
It should be noted that remaining in removal described in second of chemical mechanical planarization process described in step 3)
After the metal layer 22 on 21 surface of dielectric layer, it may also will continue to the grinding removal part dielectric layer 21 and part is located at
The metal layer 22 in the filling hole in the dielectric layer 21, but due in second of chemical mechanical planarization process
Described in the second lapping liquid temperature it is relatively low, second lapping liquid hardly reacts with the metal layer 22, institute
State the second lapping liquid remove the metal layer 22 rate and the removal dielectric layer 21 rate it is very nearly the same, it is almost the same,
Therefore, the structure of the metal plug 23 obtained after second of chemical mechanical grinding is as shown in fig. 7, the metal plug
23 top is a flat surface, be not in as in the prior art it is shown in Fig. 2 recess 13.
It should be further noted that when, without the filling hole, the metal layer 22 is formed in the dielectric layer 21
When the surface of the dielectric layer 21, after step 3), the metal layer 22 positioned at 21 surface of dielectric layer can be gone completely
It removes.
In one example, the flow velocity of the first lapping liquid can described in first time chemical mechanical planarization process described in step 2)
With identical as the flow velocity of the second lapping liquid described in second of chemical mechanical planarization process described in step 3), i.e., the described first time
Second described in the flow velocity of first lapping liquid described in chemical mechanical planarization process and second of chemical mechanical planarization process
The flow velocity of lapping liquid remains unchanged.At this point, the first lapping liquid described in the first time chemical mechanical planarization process and described
The flow velocity of second lapping liquid described in secondary chemical mechanical planarization process can between 50 ml/mins~150 ml/mins,
Preferably, in the present embodiment, the first lapping liquid described in the first time chemical mechanical planarization process and second of chemistry
The flow velocity of second lapping liquid described in mechanical grinding process is preferably 100 ml/mins.
In another example, the flow velocity of the first lapping liquid described in first time chemical mechanical planarization process described in step 2)
It can be different from the flow velocity of the second lapping liquid described in second of chemical mechanical planarization process described in step 3).Preferably, institute
The flow velocity for stating the second lapping liquid described in second of chemical mechanical planarization process is greater than the first time chemical mechanical planarization process
Described in the first lapping liquid flow velocity, be surface-treated temperature and be quickly discharged in process of lapping to reduce the dielectric layer 21 and generate
By-product；It is further preferable that in the present embodiment, the stream of the first lapping liquid described in the first time chemical mechanical planarization process
Speed is between 25 ml/mins~75 ml/mins, the stream of the second lapping liquid described in second of chemical mechanical planarization process
Speed is between 100 ml/mins~200 ml/mins.Second described in second of chemical mechanical grinding as described in the step
The flow velocity of lapping liquid is apparently higher than the flow velocity of the first lapping liquid described in first time chemical mechanical grinding described in step 2), described
Temperature is lower when the temperature of second lapping liquid in second of chemical mechanical planarization process can be compared to low flow velocity, and described
Chemical reaction between two lapping liquids and the metal layer 22 further becomes more slow or even the two will not occur significantly
Chemical reaction, at this point, the effect for only relying on mechanical lapping removes the metal layer 22.
In chemical and mechanical grinding method of the invention, by setting described in the first time chemical mechanical planarization process the
The temperature of one lapping liquid is greater than the temperature of the second lapping liquid described in second of chemical mechanical planarization process, so that described the
The grinding rate of first lapping liquid described in chemical mechanical planarization process is greater than second of chemical mechanical planarization process
Described in the second lapping liquid grinding rate, the temperature height of the first lapping liquid described in the phase can quickly remove major part before the milling
The metal layer 22 on the dielectric layer 21, the phase only needs to remove the remaining metal layer in few part after grinding
22, but the second lapping liquid temperature described in the grinding later period is lower, it is slow to the removal of the metal layer 22, and described second
The rate that lapping liquid removes the metal layer 22 is roughly the same with the rate for removing the dielectric layer 21, when both can control grinding
Between, save production cost, reduce scratch defect, and can to avoid at the top of the metal plug 23 obtained after grinding formed recess,
So that metal plug 23 has lower resistance value, it is ensured that the performance of structure.
Embodiment three
Referring to Fig. 9, the present invention also provides a kind of chemical machinery polishing system, the chemical machinery polishing system includes:
Grinding plate 31；Grinding pad 32, the grinding pad 32 are located at the upper surface of the grinding plate 31；Grinding head 33, the grinding
First 33 are located at the top of the grinding pad 32, for suppressing device to be ground (substrate 20 as described in embodiment one) in institute
It states and carries out chemical mechanical grinding on grinding pad 32；Lapping slurry feeding system 34, the grinding feed system 34 to described for grinding
The surface for grinding pad 32 provides lapping liquid, and the lapping slurry feeding system 34 is ground including the first lapping liquid supply source 3411, second
Liquid supply source 3412, perfusion tube 342 and spray head 343；Wherein, described 342 one end of perfusion tube and the first lapping liquid supply source
3411 and the second lapping liquid supply source 3412 be connected, the other end is connected with the spray head 343,343, the spray head
Above the grinding pad 32；And control module 35, the control module 35 are connected with the lapping slurry feeding system 34,
At least the temperature of the lapping liquid is provided to the grinding pad 32 for adjusting the lapping slurry feeding system 34.
As an example, the quantity of perfusion tube 342 and the spray head 343 described in the example is one.
As an example, the chemical machinery polishing system as shown in Figure 9 is for executing the change as described in embodiment one
Learn mechanical grinding method, the control module 35 includes first control unit 351, the first control unit 351 and described the
One lapping liquid supply source 3411 and the second lapping liquid supply source 3412 are connected, for controlling the first lapping liquid supply
Source 3411 the grinding initial stage stage (in the first time chemical mechanical planarization process as described in embodiment one) with the first temperature to
The grinding pad 32 provides lapping liquid, and controls the second lapping liquid supply source 3412 stage phase (such as embodiment after grinding
In second of chemical mechanical planarization process described in one) with second temperature to the grinding pad 32 provide lapping liquid；Wherein, institute
Second temperature is stated less than first temperature.
As an example, when the flow velocity of lapping liquid in the first time chemical mechanical planarization process and second of chemical machine
In tool process of lapping when the flow velocity difference of lapping liquid, the control module 35 further includes the second control unit 352, second control
Unit 352 processed is connected with the first lapping liquid supply source 3411 and the second lapping liquid supply source 3412, for controlling
The first lapping liquid supply source 3411 is in the first time chemical mechanical planarization process with the first flow velocity to the grinding pad
32 provide lapping liquids, and control the second lapping liquid supply source 3412 in second of chemical mechanical planarization process with the
Two flow velocitys provide lapping liquid to the grinding pad 32；Wherein, the second flow speed is greater than first flow velocity, with reduce it is described to
Simultaneously the by-product generated in process of lapping is quickly discharged in grinding elements surface treatment temperature.
As an example, the chemical machinery polishing system further includes measurement module 36, the measurement module 36 and described the
One control unit 351 and second control unit 352 are connected, for measuring the material layer removed in chemical process of lapping
The thickness of (metal layer 22 as described in embodiment one), and measurement is fed back into the first control unit 351 and institute
State the second control unit 352；The first control unit 351 adjusts lapping liquid according to the measurement of the measurement module 36
Temperature, and flow velocity of second control unit 352 according to the measurement adjustment lapping liquid of the measurement module 36.Specifically
, as shown in the scheme in embodiment one, in chemical mechanical planarization process, grinding initial stage (the i.e. described first time chemistry
In mechanical grinding process), it is provided and is ground to 32 surface of grinding pad with the first temperature from the first lapping liquid supply source 3411
Grinding fluid is covered in 21 surface of dielectric layer when the thickness of the metal layer 22 of the measurement module 36 measurement to removal reaches
Thickness 70%~90% when (second of chemical mechanical grinding is switched to by the first time chemical mechanical planarization process
When process), the measurement module 36 is fed back to the first control unit 351 measures consequential signal, and first lapping liquid supplies
Stop supply lapping liquid to source 3411, the first control unit 351 controls the second lapping liquid supply source 3412 with second
Temperature provides lapping liquid to 32 surface of grinding pad.
It should be noted that when the flow velocity of lapping liquid in the first time chemical mechanical planarization process and described second are changed
When learning the flow velocity difference of lapping liquid in mechanical grinding process, second control unit 352 is ground in the first time chemical machinery
The first lapping liquid supply source 3411 is controlled during mill provides lapping liquid to 32 surface of grinding pad with the first flow velocity；When
The thickness of the metal layer 22 of the measurement of measurement module 36 to removal reaches the thickness for being covered in 21 surface of dielectric layer
70%~90% when (second of chemical mechanical planarization process is switched to by the first time chemical mechanical planarization process
When), the measurement module 36 is fed back to second control unit 352 measures consequential signal, and second control unit 352 is controlled
It makes the second lapping liquid supply source 3412 and provides lapping liquid to 32 surface of grinding pad with second flow speed.
It in another example, is as shown in Figure 10 another chemical machinery polishing system, chemical mechanical grinding described in Figure 10
System is for executing the chemical and mechanical grinding method as described in embodiment two, the chemical machinery compared to Fig. 9, in Figure 10
The perfusion tube 342 in grinding system includes the first perfusion tube 3421 and the second perfusion tube 3422, and the spray head 343 includes the
One spray head 3431 and second spray head 3432, wherein described first perfusion tube, 3421 one end and the first lapping liquid supply source
3411 are connected, and the other end is connected with the first spray head 3431,；It is ground with described second described second perfusion tube, 3422 one end
Grinding fluid supply source 3412 is connected, and the other end is connected with the second spray head 3432；The control module 35 is also used to adjust
The type for the lapping liquid that the lapping slurry feeding system 34 is provided to the grinding pad 32.
The control module 35 includes first control unit 351, the first control unit 351 and first lapping liquid
Supply source 3411 and the second lapping liquid supply source 3412 are connected, and exist for controlling the first lapping liquid supply source 3411
The grinding initial stage stage (in the first time chemical mechanical planarization process as described in embodiment two) is with the first temperature to the grinding
Pad 32 provides the first lapping liquid, and controls the second lapping liquid supply source 3412 stage phase (in such as embodiment two after grinding
In second of chemical mechanical planarization process) with second temperature to the grinding pad 32 provide the second lapping liquid；Wherein, institute
Second temperature is stated less than first temperature.
As an example, when the flow velocity of the first lapping liquid in the first time chemical mechanical planarization process and described second are changed
When learning the flow velocity difference of the second lapping liquid in mechanical grinding process, the control module 35 further includes the second control unit 352, institute
The second control unit 352 is stated to be connected with the first lapping liquid supply source 3411 and the second lapping liquid supply source 3412,
For controlling the first lapping liquid supply source 3411 in the first time chemical mechanical planarization process with the first flow velocity to institute
It states grinding pad 32 and first lapping liquid is provided, and control the second lapping liquid supply source 3412 and ground in second of chemical machinery
The second lapping liquid is provided to the grinding pad 32 during mill with second flow speed；Wherein, the second flow speed is greater than described first
Flow velocity, to reduce the device surface treatment temperature to be ground and the by-product generated in process of lapping is quickly discharged.
As an example, the chemical machinery polishing system further includes measurement module 36, the measurement module 36 and described the
One control unit 351 and second control unit 352 are connected, for measuring the material layer removed in chemical process of lapping
The thickness of (metal layer 22 as described in embodiment two), and measurement is fed back into the first control unit 351 and institute
State the second control unit 352；The first control unit 351 adjusts the grinding according to the measurement of the measurement module 36
The lapping liquid type and grinding flow velocity that liquid supply system 34 is provided to the grinding pad 32.Specifically, as in embodiment two
Shown in scheme, in chemical mechanical planarization process, chemically mechanical lapping starts (the i.e. described first time chemical mechanical planarization process
In), by the first grinding supply source 3411 via first perfusion tube 3421 and the first spray head 3431 with the first temperature
It spends to the surface of the grinding pad 32 and first lapping liquid is provided；When the measurement module 36 measures the metal layer 22 to removal
Thickness (ground by the first time chemical machinery when reaching the 70%~90% of the thickness for being covered in 21 surface of dielectric layer
When honed journey switchs to second of chemical mechanical planarization process), the measurement module 36 is to 35 feedback quantity of control module
Consequential signal is surveyed, the first lapping liquid supply source 3411 stops the first lapping liquid of supply, and the first control unit 351 controls
It is ground with second temperature to described via second perfusion tube 3422 and the second spray head 3432 in second feed flow source 3412
The surface for grinding pad 32 provides the second lapping liquid.
It should be noted that when the flow velocity and described second of the first lapping liquid in the first time chemical mechanical planarization process
In secondary chemical mechanical planarization process when the flow velocity difference of the second lapping liquid, second control unit 352 is in the first time
The first lapping liquid supply source 3411 is controlled in mechanical grinding process to provide with the first flow velocity to 32 surface of grinding pad
First lapping liquid；The dielectric layer is covered in when the thickness of the metal layer 22 of the measurement module 36 measurement to removal reaches
The thickness on 21 surfaces 70%~90% when (described second chemical machine is switched to by the first time chemical mechanical planarization process
When tool process of lapping), the measurement module 36 is fed back to second control unit 352 measures consequential signal, second control
Unit 352 processed controls the second lapping liquid supply source 3412 and provides the second grinding to 32 surface of grinding pad with second flow speed
Liquid.
As an example, the chemical machinery polishing system further includes grinding adjustment component 37, the grinding adjusts component 37
It is adjusted for the flatness during the grinding process to 32 surface of grinding pad.
As an example, the grinding adjustment component 37 includes: mechanical arm 371；And grinding adjustment plate 372, the grinding
Adjustment plate 372 is fixed on one end of the mechanical arm 371, under the drive of the mechanical arm 371 to the grinding
The flatness for padding 32 surfaces is adjusted.
Example IV
Figure 11 is please referred to, the present invention also provides a kind of preparation method of metal plug, the preparation method of the metal plug
Include the following steps:
1) substrate is provided；
2) front of Yu Suoshu substrate forms dielectric layer；
3) filling hole is formed in Yu Suoshu dielectric layer；
4) metal layer is formed on Yu Suoshu dielectric layer, the metal layer fills up the filling hole and covers the dielectric layer table
Face；
5) that the substrate front surface that front is formed with the dielectric layer and the metal layer is placed in grinding pad downward is enterprising
Row first time chemical mechanical grinding, to remove the part metal layer for being covered in the dielectric layer surface, wherein described first
In secondary chemical mechanical planarization process, lapping liquid is supplied with the first temperature, and the thickness of the metal layer removed in step 5) accounts for step
It is rapid 4) in be covered in the dielectric layer surface the metal layer thickness 60%~99%, after step 5), the dielectric layer
Surface has the remaining metal layer；And
6) second of chemical mechanical grinding is carried out to the substrate and remains on the dielectric layer surface after step 6)
The metal layer completely removes, to obtain metal plug, wherein in second of chemical mechanical planarization process, lapping liquid with
Second temperature supply, the second temperature are less than first temperature, so that the grinding speed of second of chemical mechanical grinding
Rate is less than the grinding rate of the first time chemical mechanical grinding.
In step 1), S31 step and Figure 12 in Figure 11 are please referred to, a substrate 20 is provided.
As an example, the substrate 20 can be any one substrate, for example silicon base, sapphire substrates or gallium nitride base
Bottom etc..The function element that electricity in need is drawn is formed in the substrate 20, for example MOS device etc..
In step 2), S32 step and Figure 13 in Figure 11 are please referred to, the front of Yu Suoshu substrate 20 forms dielectric layer
21。
As an example, the material of the dielectric layer 21 may include silica (SiOx) or silicon nitride (SiN) etc..Specifically
, the dielectric layer can be formed in the front of the substrate 20 using physical gas-phase deposition or chemical vapor deposition process
21。
In step 3), S33 step and Figure 14 in Figure 11 are please referred to, forms filling hole 211 in Yu Suoshu dielectric layer 21.
As an example, can be using photoetching and etching technics in forming the filling hole 211 in the dielectric layer 21.In institute
The quantity for stating the filling hole 211 formed in dielectric layer 21 can be set according to actual needs, it is preferable that this implementation
In, the quantity in the filling hole 211 can be multiple.
In step 4), the S34 step and Figure 15 to Figure 16 in Figure 11 are please referred to, forms metal on Yu Suoshu dielectric layer 21
Layer 22, the metal layer 22 fills up the filling hole 211 and covers 21 surface of dielectric layer.
In one example, metal layer 22 is formed on Yu Suoshu dielectric layer 21 to include the following steps:
Titanium nitride layer 222 4-1) is formed in the surface of the side wall in the filling hole 211, bottom and the dielectric layer 21, such as
Shown in Figure 15, specifically, the titanium nitride layer can be formed using physical gas-phase deposition or chemical vapor deposition process
222；
4-2) surface of Yu Suoshu titanium nitride layer 222 forms tungsten layer 221, and the tungsten layer 221 fills up the filling hole 211 simultaneously
Covering is located at the surface of the titanium nitride layer 222 on 21 surface of dielectric layer, as shown in figure 16, specifically, object can be used
Physical vapor deposition technique or chemical vapor deposition process form the tungsten layer 221.
In another example, the metal layer 22 of formation includes tungsten layer 221, and specific method is can also be directly in described
It fills in hole 211 and the surface of the dielectric layer 21 forms tungsten layer 221 and is used as the metal layer 22.
In step 5), please refer to S35 step and Figure 17 to Figure 18 in Figure 11, by front be formed with the dielectric layer 21 and
20 face down of the substrate of the metal layer 22 is placed in progress first time chemical mechanical grinding on grinding pad, to remove covering
The part metal layer 22 in 21 surface of dielectric layer, wherein in the first time chemical mechanical planarization process, lapping liquid
With the supply of the first temperature, after step 5), 21 surface of dielectric layer has the remaining metal layer 22.
It should be noted that be that device to be ground is fixed on a grinding head in chemical mechanical planarization process, it is described to grind
The device to be ground is pressed on the grinding pad positioned at a grinding plate upper surface by bistrique, and lapping slurry feeding system is in Xiang Suoshu
On grinding pad while jet grinding liquid, the grinding plate drives the grinding pad rotation, the grinding head drive it is described to
Grinding elements does the rotation opposite with the grinding pad direction of rotation, to grind to the device to be ground.
As an example, what the lapping liquid used in the step can grind substrate 20 for any one
Lapping liquid, for example, comprising silica (SiOx) particle lapping liquid or include ceria (CeO2) particle lapping liquid.
In one example, the lapping liquid includes cerium oxide particles, deionized water, surfactant and hydrogen peroxide
(H2O2)；The ratio of each component can be set according to actual needs in the lapping liquid；Preferably, described in the present embodiment
The mass percent of hydrogen peroxide is between 2.5%~3.5%；The surfactant includes cationic surface active agent.
In another example, the lapping liquid can also include silica dioxide granule, deionized water, surfactant and double
Oxygen water；The ratio of each component can be set according to actual needs in the lapping liquid；Preferably, described in the present embodiment
In lapping liquid, the mass percent of the silica dioxide granule between 1%~7%, the mass percent of the hydrogen peroxide between
1%~7%；The surfactant includes cationic surface active agent.
As an example, in this step, the temperature of the lapping liquid is relatively high, it is preferable that described in the present embodiment
First temperature is between 40 DEG C~45 DEG C, i.e., in the described first time chemical mechanical planarization process, self-grind system is to the grinding pad
The temperature of the lapping liquid of injection is between 40 DEG C~45 DEG C.It is main to remove in the first time chemical mechanical planarization process
Chemical reaction (Chemical can occur with the lapping liquid for the metal layer 22, the metal layer 22 (for example, tungsten metal layer)
Reaction), the grinding removal rate (Removal Rate) of the metal layer 22 is influenced by the temperature of the lapping liquid deeply,
The temperature of the lapping liquid is higher, gets in the first time chemical mechanical planarization process to the rate of the metal layer 22 removal
It is high.Again due to containing hydrogen peroxide in the lapping liquid, when lapping liquid temperature is higher, the metal layer 22 and the lapping liquid
Chemical reaction is stronger, so that grinding rate is very fast.It is tungsten layer 221 as an example, ground with the metal layer 22
Cheng Zhong, under the action of fuel factor, tungsten layer 221 can be reacted with the hydrogen peroxide in the lapping liquid to be generated tungsten oxide and is removed,
Also, the temperature of the lapping liquid is higher, and the temperature in process of lapping is higher, and the reaction speed is faster, that is, removes the metal
The rate of layer 22 is faster.
As an example, the thickness of the metal layer 22 removed in the first time chemical mechanical planarization process can basis
Actual needs is set, since the first flow velocity of the lapping liquid in this step is smaller, so that the grinding speed of the step
Rate, in order to reduce total milling time, improves grinding efficiency, save the cost, the metal removed in this step than very fast
The thickness of layer 22 can be significantly greater than the thickness of the metal layer 22 removed in process of lapping in subsequent step；Preferably, originally
In embodiment, the thickness d 1 of the metal layer 22 removed in the first time chemical mechanical planarization process, which accounts for be covered in, to be given an account of
The 70%~90% of 22 thickness d 2 of the metal layer on 21 surface of matter layer.It is specific as shown in FIG. 17 and 18, it is chemical for the first time
The tungsten layer 2211 removed in mechanical lapping with a thickness of dotted line shadow region in such as Figure 17, structure such as Figure 18 for being obtained after the step
Shown, the remained on surface of the dielectric layer 21 has tungsten layer 2212.
In step 6), S36 step and Figure 19 in Figure 11 are please referred to, second of chemical machinery is carried out to the substrate 20
Grinding, after step 6), the metal layer 22 for remaining on 21 surface of dielectric layer is completely removed, to obtain metal plug
23, wherein in second of chemical mechanical planarization process, lapping liquid is supplied with second temperature, and the second temperature is less than institute
The first temperature is stated, so that the grinding rate of second of chemical mechanical grinding is less than grinding for the first time chemical mechanical grinding
Grind rate.
Specifically, in step 6), the titanium nitride layer 222 on the dielectric layer 21 and part on the substrate 20
The dielectric layer 21 be removed.After step 6), the metal layer 22 of reservation is formed as multiple in the dielectric layer 21
Metal plug 23, at this point, the top surface of the metal plug 23 relative to dielectric layer 21 described after grinding upper surface be it is flat
Form or recess are between 15 angstroms~150 angstroms.
In one example, second of chemical mechanical grinding in the step and the chemistry of first time described in step 5)
Mechanical lapping carries out on same milling apparatus, more specifically, second of chemical mechanical grinding and step in the step
It is rapid 5) described in first time chemical mechanical grinding be a continuous process of lapping, only need to be in the first time chemical mechanical grinding
The temperature for adjusting the lapping liquid later can carry out second of chemical mechanical grinding, specifically, can be by using two
The lapping liquid of a different lapping liquid supply source supply different temperatures.That is second of chemical mechanical grinding described in the step
Used in lapping liquid it is identical with the ingredient of lapping liquid used in the first time chemical mechanical grinding described in step 5).
In another example, second of chemical mechanical grinding in the step and first time described in step 5)
Mechanical lapping is learned to carry out on same milling apparatus, more specifically, second of chemical mechanical grinding in the step with
First time chemical mechanical grinding described in step 5) is a continuous process of lapping, need to only be ground in the first time chemical machinery
A kind of lapping liquid is sprayed with first temperature using the first perfusion tube and first spray head when mill, in the first time chemistry
It uses the second perfusion tube and second spray head after mechanical lapping instead and another grinding is sprayed to the grinding pad with the second temperature
Liquid can carry out second of chemical mechanical grinding.It is ground used in second of chemical mechanical planarization process described in the step
Grinding fluid is different from lapping liquid used in first time chemical mechanical planarization process in step 5), in the present embodiment, in the step
Lapping liquid can be the lapping liquid that any one can grind substrate 20, for example, comprising silica (SiOx) particle
Lapping liquid includes ceria (CeO2) particle lapping liquid；Preferably, in the step lapping liquid selected from including titanium dioxide
The lapping liquid of cerium particle；It is further preferable that in the present embodiment, in the step lapping liquid include cerium oxide particles, deionized water,
Surfactant and hydrogen peroxide.The ratio of each component can be set according to actual needs in lapping liquid in the step.It is preferred that
Ground, in the present embodiment, in the step in lapping liquid, the mass percent of the hydrogen peroxide is between 2.5%~3.5%.The table
Face activating agent includes cationic surface active agent.It should be noted that in the present embodiment, in identical flow velocity and grinding pressure
Under equal grinding conditions, first described in lapping liquid used in second of chemical mechanical grinding described in the step and step 5)
Lapping liquid used in secondary chemical mechanical grinding has different grinding rates；Preferably, in the present embodiment, in identical flow velocity
And under the grinding conditions such as grinding pressure, the grinding of the lapping liquid used in second of chemical mechanical grinding described in the step
Rate is less than the grinding rate of the lapping liquid used in first time chemical mechanical grinding described in step 5).It needs into one
Walk explanation, first time described in lapping liquid used in second of chemical mechanical grinding described in the step and step 5)
The lapping liquid used in chemical mechanical grinding in addition to can it is as described above different other than, can also be the institute in the step
Stating lapping liquid includes silica dioxide granule, and the lapping liquid in step 5) includes cerium oxide particles；It may be the step
The first time chemical machinery in component materials and step 5) that lapping liquid used in second of chemical mechanical grinding includes in rapid
The component materials that lapping liquid used in grinding includes are identical, but grind used in second of chemical mechanical grinding in the step
Each component substance in lapping liquid used in first time chemical mechanical grinding in liquid in the content Yu step 5) of each component substance
Content it is different.
As an example, the second temperature is less than 20 degrees Celsius of first temperature (DEG C) or more, second of chemistry
The grinding rate of mechanical lapping is less than the grinding rate 40% of the first time chemical mechanical grinding；Preferably, in the present embodiment,
Under the premise of first temperature is between 40 DEG C~45 DEG C, the second temperature is between 10 DEG C~15 DEG C；The first time
The grinding rate of mechanical lapping is learned between 800 angstrom mins~2000 angstrom mins, the grinding of second of chemical mechanical grinding
Rate is between 500 angstrom mins~1600 angstrom mins.Lapping liquid in second of chemical mechanical grinding as described in the step
Temperature of the temperature significantly lower than lapping liquid in first time chemical mechanical grinding described in step 5), second of chemical mechanical grinding mistake
Cheng Zhong, lapping liquid temperature is lower, the chemical reaction between lapping liquid and the metal layer 22 become very slowly in addition the two not
It can occur significantly to chemically react, at this point, the effect for only relying on mechanical lapping removes the metal layer 22.Although the institute of the step
State removed in second of chemical mechanical planarization process the metal layer 22 rate it is slow, but as described in step 5)
The metal layer 22 of the overwhelming majority has been had been removed in chemical mechanical planarization process, needs to remove in the step described
Metal layer 22 only accounts for the thickness 10%~30% for needing the metal layer 22 removed, so time-consuming in entire process of lapping
It is very short, it can be ensured that grinding efficiency with higher.
It should be noted that remaining in removal described in second of chemical mechanical planarization process described in step 6)
After the metal layer 22 on 21 surface of dielectric layer, it may also will continue to the grinding removal part dielectric layer 21 and part is located at
The metal layer 22 in the filling hole 211 in the dielectric layer 21, but due in second of chemical mechanical grinding
The temperature of lapping liquid is relatively low in the process, and lapping liquid hardly reacts with the metal layer 22, described in lapping liquid removal
The rate of metal layer 22 and the rate for removing the dielectric layer 21 are very nearly the same, almost the same, therefore, in second of chemistry
The structure of the metal plug 23 obtained after mechanical lapping is as shown in figure 17, and the top of the metal plug 23 is a flat surface, no
Will appear as in the prior art it is shown in Fig. 2 recess 13.
In one example, the flow velocity of lapping liquid can be with step in first time chemical mechanical planarization process described in step 5)
6) flow velocity of lapping liquid is identical in second of chemical mechanical planarization process described in, i.e., the described first time chemical mechanical planarization process
It is remained unchanged with the flow velocity of lapping liquid in second of chemical mechanical planarization process.At this point, the first time chemical machinery is ground
The flow velocity of lapping liquid can be between 50 ml/mins~150 millis during mill and in second of chemical mechanical planarization process
Liter/min, it is preferable that in the present embodiment, in the first time chemical mechanical planarization process and second of chemical machinery is ground
The flow velocity of lapping liquid is preferably 100 ml/mins during mill.
In another example, the flow velocity of lapping liquid can be with step in first time chemical mechanical planarization process described in step 5)
It is rapid 6) described in second of chemical mechanical planarization process lapping liquid flow velocity it is different, i.e., the described first time chemical mechanical grinding it
Afterwards, the flow velocity for needing to adjust lapping liquid carries out second of chemical mechanical grinding again.Preferably, second of chemical machinery
The flow velocity of lapping liquid is greater than the flow velocity of lapping liquid in the first time chemical mechanical planarization process in process of lapping, described in reducing
Dielectric layer 21 is surface-treated temperature and the by-product generated in process of lapping is quickly discharged；It is further preferable that in the present embodiment, institute
The flow velocity of lapping liquid in first time chemical mechanical planarization process is stated between 25 ml/mins~75 ml/mins, described second
The flow velocity of lapping liquid is between 100 ml/mins~200 ml/mins in chemical mechanical planarization process.As described in the step
The flow velocity of lapping liquid is apparently higher than in first time chemical mechanical grinding described in step 5) and grinds in second of chemical mechanical grinding
Temperature is lower when the temperature of the flow velocity of liquid, the lapping liquid in second of chemical mechanical planarization process can be compared to low flow velocity,
Chemical reaction between lapping liquid and the metal layer 22 further becomes more slow or even the two will not occur significantly to change
Reaction is learned, at this point, the effect for only relying on mechanical lapping removes the metal layer 22.
As an example, the metal plug 23 has flat top after step 6).
In the preparation method of metal plug 23 of the invention, ground by setting in the first time chemical mechanical planarization process
The temperature of grinding fluid is greater than the temperature of lapping liquid in second of chemical mechanical planarization process, before the milling the temperature of phase lapping liquid
Height can quickly remove the metal layer 22 being predominantly located on the dielectric layer 21, and the phase only needs to remove seldom after grinding
The remaining metal layer 22 in part, but grinding later period lapping liquid temperature is lower, compares the removal of the metal layer 22
Slowly, and the lapping liquid to remove the rate of the metal layer 22 roughly the same with the rate for removing the dielectric layer 21, both can be with
Milling time is controlled, production cost is saved, reduces scratch defect, and can be to avoid the metal plug 23 obtained after grinding
Recess is formed on top, so that metal plug 23 has lower resistance value, it is ensured that the performance of structure.
In conclusion the present invention provides the preparation method of a kind of chemical and mechanical grinding method, system and metal plug, it is described
Chemical and mechanical grinding method includes the following steps: that 1) offer is formed with the substrate of dielectric layer, is formed with metal on the dielectric layer
Layer；2) substrate front surface is placed in progress first time chemical mechanical grinding on grinding pad downward, is covered in and is given an account of with removal
The part of the matter layer surface metal layer, wherein in the first time chemical mechanical planarization process, lapping liquid is supplied with the first temperature
It gives, the thickness of the metal layer removed in step 2) accounts in step 1) the metal thickness for being covered in the dielectric layer surface
The 60%~99% of degree, the dielectric layer surface has the remaining metal layer after step 2)；And 3) to the substrate into
Second of chemical mechanical grinding of row, after step 3), the remaining metal layer removal of dielectric layer surface, wherein described
In second of chemical mechanical planarization process, the lapping liquid is supplied with second temperature, and the second temperature is less than first temperature
Degree, so that the grinding rate of second of chemical mechanical grinding is less than the grinding rate of the first time chemical mechanical grinding.
In chemical and mechanical grinding method of the invention, the temperature of grinding later period lapping liquid is greater than by the temperature of setting grinding lapping liquid early period
Degree, the temperature height of phase lapping liquid can quickly remove the metal layer being predominantly located on dielectric layer before the milling, after grinding the phase
Only need to remove the remaining metal layer in few part, and grinding later period lapping liquid temperature is relatively low, the removal to metal layer
It is slow, and lapping liquid removal metal layer rate with remove the rate of dielectric layer it is roughly the same, both can control milling time,
It saves production cost, reduce scratch defect, and can be to avoid recess is formed at the top of the metal plug obtained after grinding, so that golden
Belonging to plug has lower resistance value, it is ensured that the performance of structure.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (39)
1. a kind of chemical and mechanical grinding method, which is characterized in that the chemical and mechanical grinding method includes the following steps:
1) substrate for being formed with dielectric layer is provided, is formed with metal layer on the dielectric layer；
2) substrate front surface is placed in progress first time chemical mechanical grinding on grinding pad downward, is covered in and is given an account of with removal
The part of the matter layer surface metal layer, wherein in the first time chemical mechanical planarization process, lapping liquid is supplied with the first temperature
It gives, the thickness of the metal layer removed in step 2) accounts in step 1) the metal thickness for being covered in the dielectric layer surface
The 60%~99% of degree, the dielectric layer surface has the remaining metal layer after step 2)；And
3) second of chemical mechanical grinding, after step 3), the remaining gold of dielectric layer surface are carried out to the substrate
Belonging to layer removal, wherein in second of chemical mechanical planarization process, the lapping liquid is supplied with second temperature, and described second
Temperature is less than first temperature, so that the grinding rate of second of chemical mechanical grinding is less than the first time chemistry machine
The grinding rate of tool grinding.
2. chemical and mechanical grinding method according to claim 1, which is characterized in that the second temperature is less than described first
For temperature at 20 degrees Celsius or more, the grinding rate of second of chemical mechanical grinding is less than the first time chemical mechanical grinding
Grinding rate 40%.
3. chemical and mechanical grinding method according to claim 1, which is characterized in that the metal layer includes tungsten layer.
4. chemical and mechanical grinding method according to claim 3, which is characterized in that the metal layer further includes titanium nitride
Layer,
The titanium nitride layer between the dielectric layer and the tungsten layer, the titanium nitride layer on the dielectric layer and
The dielectric layer of part in the substrate is removed in step 3).
5. chemical and mechanical grinding method according to claim 1, which is characterized in that the dielectric layer includes insulating oxide
Layer,
And the metal layer is formed as multiple metal plugs in the dielectric layer, the top of the metal plug after step 3
Face is planar form or recess between 15 angstroms~150 angstroms relative to the upper surface of dielectric layer described after grinding.
6. chemical and mechanical grinding method according to claim 1, which is characterized in that the lapping liquid includes ceria
Grain, deionized water, surfactant and hydrogen peroxide, the mass percent of the hydrogen peroxide is between 2.5%~3.5%.
7. chemical and mechanical grinding method according to claim 1, which is characterized in that the lapping liquid includes silica
Grain, deionized water, surfactant and hydrogen peroxide, the mass percent of the silica dioxide granule between 1%~7%,
The mass percent of the hydrogen peroxide is between 1%~7%.
8. chemical and mechanical grinding method according to claim 1, which is characterized in that the first time chemical mechanical grinding mistake
The flow velocity of lapping liquid is identical as the flow velocity of lapping liquid in second of chemical mechanical planarization process in journey, the first time chemistry
The flow velocity of lapping liquid is with the flow velocity of lapping liquid in second of chemical mechanical planarization process between 50 in mechanical grinding process
Ml/min~150 ml/mins.
9. chemical and mechanical grinding method according to claim 1, which is characterized in that the first time chemical mechanical grinding mistake
The flow velocity of lapping liquid is different from the flow velocity of lapping liquid in second of chemical mechanical planarization process in journey, and described second is changed
The flow velocity for learning lapping liquid in mechanical grinding process is greater than the flow velocity of lapping liquid in the first time chemical mechanical planarization process.
10. chemical and mechanical grinding method according to claim 9, which is characterized in that the first time chemical mechanical grinding
The flow velocity of lapping liquid is ground in 25 ml/mins~75 ml/mins, second of chemical mechanical planarization process in the process
The flow velocity of grinding fluid is between 100 ml/mins~200 ml/mins.
11. chemical and mechanical grinding method according to any one of claim 1 to 10, which is characterized in that first temperature
Degree is between 40 DEG C~45 DEG C；The second temperature is between 10 DEG C~15 DEG C；The grinding rate of the first time chemical mechanical grinding
Between 800 angstrom mins~2000 angstrom mins, the grinding rate of second of chemical mechanical grinding between 500 angstrom mins~
The thickness of 1600 angstrom mins, the middle metal layer removed of step 2) accounts in step 1) institute for being covered in the dielectric layer surface
State the 70%~90% of metal layer thickness.
12. a kind of chemical and mechanical grinding method, which is characterized in that the chemical and mechanical grinding method includes the following steps:
1) substrate for being formed with dielectric layer is provided, is formed with metal layer on the dielectric layer；
2) substrate front surface is placed in progress first time chemical mechanical grinding on grinding pad downward, is covered in and is given an account of with removal
The part of the matter layer surface metal layer, wherein in the first time chemical mechanical planarization process, using the first lapping liquid with
The supply of one temperature, the thickness of the middle metal layer removed of step 2), which accounts in step 1), is covered in the described of the dielectric layer surface
The 60%~99% of metal layer thickness, the dielectric layer surface has the remaining metal layer after step 2)；And
3) second of chemical mechanical grinding is carried out to the substrate, to remove in the metal layer of the dielectric layer surface,
In, in second of chemical mechanical planarization process, supplied using the second lapping liquid with second temperature, the second temperature is less than
First temperature, so that the grinding rate of second of chemical mechanical grinding is less than the first time chemical mechanical grinding
Grinding rate.
13. chemical and mechanical grinding method according to claim 12, which is characterized in that the second temperature is less than described the
The grinding rate of one 20 degrees Celsius of temperature or more, second of chemical mechanical grinding is less than the first time chemical mechanical grinding
Grinding rate 40%.
14. chemical and mechanical grinding method according to claim 12, which is characterized in that the metal layer includes tungsten layer.
15. chemical and mechanical grinding method according to claim 14, which is characterized in that the metal layer further includes titanium nitride
Layer, the titanium nitride layer between the dielectric layer and the tungsten layer, the titanium nitride layer on the dielectric layer and
The dielectric layer of part in the substrate is removed in step 3).
16. chemical and mechanical grinding method according to claim 12, which is characterized in that the dielectric layer includes insulating oxide
Layer, and the metal layer is formed as multiple metal plugs in the dielectric layer, the top of the metal plug after step 3)
Face is planar form or recess between 15 angstroms~150 angstroms relative to the upper surface of dielectric layer described after grinding.
17. chemical and mechanical grinding method according to claim 12, which is characterized in that first lapping liquid includes dioxy
Silicon carbide particle, deionized water, surfactant and hydrogen peroxide, second lapping liquid include cerium oxide particles, deionized water,
Surfactant and hydrogen peroxide.
18. chemical and mechanical grinding method according to claim 17, which is characterized in that in first lapping liquid,
The mass percent of the silica dioxide granule between 1%~7%, the mass percent of the hydrogen peroxide between 1%~
7%；
In second lapping liquid, the mass percent of the hydrogen peroxide is between 2.5%~3.5%.
19. chemical and mechanical grinding method according to claim 12, which is characterized in that the flow velocity of first lapping liquid with
The flow velocity of second lapping liquid is identical, and the flow velocity of the flow velocity of first lapping liquid and second lapping liquid is between 50 millis
Liter/min~150 ml/mins.
20. according to claim, chemical and mechanical grinding method described in 12, which is characterized in that the flow velocity of first lapping liquid
It is different from the flow velocity of second lapping liquid, and the flow velocity of second lapping liquid is greater than the flow velocity of first lapping liquid.
21. chemical and mechanical grinding method according to claim 20, which is characterized in that the flow velocity of first lapping liquid is situated between
In 25 ml/mins~75 ml/mins, the flow velocity of second lapping liquid is between 100 ml/mins~200 ml/mins
Clock.
22. chemical and mechanical grinding method described in any one of 2 to 21 according to claim 1, which is characterized in that first temperature
Degree is between 40 DEG C~45 DEG C；The second temperature is between 10 DEG C~15 DEG C；The grinding rate of the first time chemical mechanical grinding
Between 800 angstrom mins~2000 angstrom mins, the grinding rate of second of chemical mechanical grinding between 500 angstrom mins~
The thickness of 1600 angstrom mins, the middle metal layer removed of step 2) accounts in step 1) institute for being covered in the dielectric layer surface
State the 70%~90% of metal layer thickness.
23. a kind of chemical machinery polishing system, which is characterized in that the chemical machinery polishing system includes:
Grinding plate；
Grinding pad, positioned at the upper surface of the grinding plate；
Grinding head, positioned at the top of the grinding pad, for suppressing device to be ground in the chemical machine of progress on the grinding pad
Tool grinding；
Lapping slurry feeding system, for providing lapping liquid to the surface of the grinding pad, the lapping slurry feeding system includes the
One lapping liquid supply source, the second lapping liquid supply source, perfusion tube and spray head；Wherein, described perfusion tube one end is ground with described first
Grinding fluid supply source and the second lapping liquid supply source are connected, and the other end is connected with the spray head, and the spray head is located at institute
It states above grinding pad；And
Control module is connected with the lapping slurry feeding system, at least for adjusting the lapping slurry feeding system to described
Grinding pad provides the temperature of the lapping liquid.
24. chemical machinery polishing system according to claim 23, which is characterized in that the control module includes the first control
Unit processed, the first control unit are connected with the first lapping liquid supply source and the second lapping liquid supply source, use
It is mentioned with the first temperature to the grinding pad in first time chemical mechanical planarization process in controlling the first lapping liquid supply source
For the lapping liquid, and control the second lapping liquid supply source in second of chemical mechanical planarization process with second temperature to
The grinding pad provides the lapping liquid；Wherein, the second temperature is less than first temperature.
25. chemical machinery polishing system according to claim 24, which is characterized in that the control module further includes second
Control unit, second control unit are connected with the first lapping liquid supply source and the second lapping liquid supply source,
For controlling the first lapping liquid supply source in first time chemical mechanical planarization process with the first flow velocity to the grinding pad
The lapping liquid is provided, and controls the second lapping liquid supply source in second of chemical mechanical planarization process with second flow speed
The lapping liquid is provided to the grinding pad；Wherein, the second flow speed is greater than first flow velocity.
26. chemical machinery polishing system according to claim 25, which is characterized in that the chemical machinery polishing system is also
Including measurement module, the measurement module is connected with the first control unit and second control unit, for measuring
The thickness of the material layer removed during chemical grinding, and measurement is fed back into the first control unit and described second
Control unit；The first control unit adjusts the temperature of the lapping liquid, and institute according to the measurement of the measurement module
State the flow velocity that the second control unit adjusts the lapping liquid according to the measurement of the measurement module.
27. chemical machinery polishing system according to claim 23, which is characterized in that the perfusion tube includes the first infusion
Pipe and the second perfusion tube, the spray head include first spray head and second spray head, wherein first perfusion tube one end and described the
One lapping liquid supply source is connected, and the other end is connected with the first spray head,；Second perfusion tube one end and described second
Lapping liquid supply source is connected, and the other end is connected with the second spray head；The control module is also used to adjust the grinding
The type for the lapping liquid that liquid supply system is provided to the grinding pad.
28. chemical machinery polishing system according to claim 27, which is characterized in that the control module includes the first control
Unit processed, the first control unit are connected with the first lapping liquid supply source and the second lapping liquid supply source, use
It is mentioned with the first temperature to the grinding pad in first time chemical mechanical planarization process in controlling the first lapping liquid supply source
For the first lapping liquid, and control the second lapping liquid supply source in second of chemical mechanical planarization process with second temperature to
The grinding pad provides the second lapping liquid；Wherein, the second temperature is less than first temperature.
29. chemical machinery polishing system according to claim 28, which is characterized in that the control module further includes second
Control unit, second control unit are connected with the first lapping liquid supply source and the second lapping liquid supply source,
For controlling the first lapping liquid supply source in first time chemical mechanical planarization process with the first flow velocity to the grinding pad
First lapping liquid is provided, and controls the second lapping liquid supply source in second of chemical mechanical planarization process with second
Flow velocity provides second lapping liquid to the grinding pad；Wherein, the second flow speed is greater than first flow velocity.
30. chemical machinery polishing system according to claim 29, which is characterized in that the chemical machinery polishing system is also
Including measurement module, the measurement module is connected with the first control unit and second control unit, for measuring
The thickness of the material layer removed during chemical grinding, and measurement is fed back into the first control unit and described second
Control unit；The first control unit adjusts the lapping slurry feeding system to institute according to the measurement of the measurement module
The lapping liquid type and lapping liquid temperature of grinding pad offer, and measurement of second control unit according to the measurement module are provided
The lapping liquid type and grinding flow velocity that lapping slurry feeding system described in structural adjustment is provided to the grinding pad.
31. the chemical machinery polishing system according to any one of claim 23 to 30, which is characterized in that the chemistry machine
Tool grinding system further includes grinding adjustment component, and the grinding adjustment component is used for during the grinding process to the grinding pad surface
Flatness be adjusted, grinding adjustment component includes:
Mechanical arm；And
Adjustment plate is ground, the grinding adjustment plate is fixed on one end of the mechanical arm, for the band in the mechanical arm
The flatness of the grinding pad surface is adjusted under dynamic.
32. a kind of preparation method of metal plug, which is characterized in that the preparation method of the metal plug includes the following steps:
1) substrate is provided；
2) front of Yu Suoshu substrate forms dielectric layer；
3) filling hole is formed in Yu Suoshu dielectric layer；
4) metal layer is formed on Yu Suoshu dielectric layer, the metal layer fills up the filling hole and covers the dielectric layer surface；
5) substrate front surface that front is formed with the dielectric layer and the metal layer is placed in downward on grinding pad and carries out the
Chemical mechanical grinding, to remove the part metal layer for being covered in the dielectric layer surface, wherein the first time
It learns in mechanical grinding process, lapping liquid is supplied with the first temperature, and the thickness of the metal layer removed in step 5) accounts for step 4)
In be covered in the dielectric layer surface the metal layer thickness 60%~99%, after step 5), the dielectric layer surface
With the remaining metal layer；And
6) second of chemical mechanical grinding is carried out to the substrate and remains on the described of the dielectric layer surface after step 6)
Metal layer completely removes, to obtain metal plug, wherein in second of chemical mechanical planarization process, lapping liquid is with second
Temperature supply, the second temperature is less than first temperature, so that the grinding rate of second of chemical mechanical grinding is small
In the grinding rate of the first time chemical mechanical grinding.
33. the preparation method of metal plug according to claim 32, which is characterized in that step 4) includes the following steps:
4-1) titanium nitride layer is formed in the surface of the side wall in the filling hole, bottom and the dielectric layer；
4-2) surface of Yu Suoshu titanium nitride layer forms tungsten layer, and the tungsten layer, which fills up the filling hole and covers, is located at the medium
The surface of the titanium nitride layer of layer surface；Wherein, the titanium nitride layer on the dielectric layer and on the substrate
The partial dielectric layer (21) is removed in step 6).
34. the preparation method of metal plug according to claim 32, which is characterized in that the metal plug after step 6)
With flat top, the top surface of the metal plug is recessed relative to the upper surface of dielectric layer described after grinding 15 angstroms~150
Between angstrom.
35. the preparation method of metal plug according to claim 32, which is characterized in that the first time chemical machinery is ground
The flow velocity of lapping liquid is identical as the flow velocity of lapping liquid in second of chemical mechanical planarization process during mill, the first time
The flow velocity of lapping liquid and the flow velocity of lapping liquid in second of chemical mechanical planarization process are situated between in chemical mechanical planarization process
In 50 ml/mins~150 ml/mins.
36. the preparation method of metal plug according to claim 32, which is characterized in that the first time chemical machinery is ground
The flow velocity of lapping liquid is different from the flow velocity of lapping liquid in second of chemical mechanical planarization process during mill, and described second
The flow velocity of lapping liquid is greater than the flow velocity of lapping liquid in the first time chemical mechanical planarization process in secondary chemical mechanical planarization process,
The flow velocity of lapping liquid is between 25 ml/mins~75 ml/mins in the first time chemical mechanical planarization process, and described second
The flow velocity of lapping liquid is between 100 ml/mins~200 ml/mins in secondary chemical mechanical planarization process.
37. the preparation method of metal plug according to claim 32, which is characterized in that the first time chemical machinery is ground
Lapping liquid during mill is identical as the lapping liquid in second of chemical mechanical planarization process.
38. the preparation method of metal plug according to claim 32, which is characterized in that the first time chemical machinery is ground
Lapping liquid during mill is different from the lapping liquid in second of chemical mechanical planarization process.
39. the preparation method of the metal plug according to any one of claim 32 to 38, which is characterized in that described first
Temperature is between 40 DEG C~45 DEG C；The second temperature is between 10 DEG C~15 DEG C；The grinding speed of the first time chemical mechanical grinding
Rate is between 800 angstrom mins~2000 angstrom mins, and the grinding rate of second of chemical mechanical grinding is between 500 angstrom mins
~1600 angstrom mins, the thickness of the middle metal layer removed of step 5), which accounts in step 4), is covered in the dielectric layer surface
The 70%~90% of the metal layer thickness.
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| CN113528028A (en) * | 2021-08-23 | 2021-10-22 | 长鑫存储技术有限公司 | Chemical mechanical polishing solution, semiconductor structure and preparation method thereof |
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| 张楷亮, 刘玉岭, 王芳, 李志国, 韩党辉: "ULSI硅衬底的化学机械抛光", 半导体学报, no. 01, 31 January 2004 (2004-01-31), pages 117 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447589A (en) * | 2021-02-01 | 2021-03-05 | 晶芯成(北京)科技有限公司 | Semiconductor device and method for manufacturing the same |
| CN113528028A (en) * | 2021-08-23 | 2021-10-22 | 长鑫存储技术有限公司 | Chemical mechanical polishing solution, semiconductor structure and preparation method thereof |
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