CN101456153A - Tungsten chemical mechanical polishing method and manufacture method of tungsten plug - Google Patents
Tungsten chemical mechanical polishing method and manufacture method of tungsten plug Download PDFInfo
- Publication number
- CN101456153A CN101456153A CNA2007100945612A CN200710094561A CN101456153A CN 101456153 A CN101456153 A CN 101456153A CN A2007100945612 A CNA2007100945612 A CN A2007100945612A CN 200710094561 A CN200710094561 A CN 200710094561A CN 101456153 A CN101456153 A CN 101456153A
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- Prior art keywords
- cmp
- tungsten
- dielectric layer
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims abstract description 162
- 229910052721 tungsten Inorganic materials 0.000 title claims abstract description 162
- 239000010937 tungsten Substances 0.000 title claims abstract description 162
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000126 substance Substances 0.000 title claims description 39
- 238000005498 polishing Methods 0.000 title claims description 24
- 229910052751 metal Inorganic materials 0.000 claims abstract description 174
- 239000002184 metal Substances 0.000 claims abstract description 174
- 230000004888 barrier function Effects 0.000 claims abstract description 79
- 238000000227 grinding Methods 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 44
- 239000007788 liquid Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 23
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052715 tantalum Inorganic materials 0.000 claims description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 238000006386 neutralization reaction Methods 0.000 claims description 7
- 102100038123 Teneurin-4 Human genes 0.000 claims description 6
- 101710122302 Teneurin-4 Proteins 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract 1
- 238000003701 mechanical milling Methods 0.000 description 15
- 230000002950 deficient Effects 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 238000003801 milling Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- ADKPKEZZYOUGBZ-UHFFFAOYSA-N [C].[O].[Si] Chemical compound [C].[O].[Si] ADKPKEZZYOUGBZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2007100945612A CN101456153A (en) | 2007-12-13 | 2007-12-13 | Tungsten chemical mechanical polishing method and manufacture method of tungsten plug |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNA2007100945612A CN101456153A (en) | 2007-12-13 | 2007-12-13 | Tungsten chemical mechanical polishing method and manufacture method of tungsten plug |
Publications (1)
Publication Number | Publication Date |
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CN101456153A true CN101456153A (en) | 2009-06-17 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNA2007100945612A Pending CN101456153A (en) | 2007-12-13 | 2007-12-13 | Tungsten chemical mechanical polishing method and manufacture method of tungsten plug |
Country Status (1)
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CN (1) | CN101456153A (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102019577B (en) * | 2009-09-17 | 2012-11-28 | 中芯国际集成电路制造(上海)有限公司 | Optimization method of chemical mechanical polishing process |
CN102945826A (en) * | 2012-11-30 | 2013-02-27 | 上海宏力半导体制造有限公司 | Method for improving contact resistance uniformity |
CN103515296A (en) * | 2012-06-26 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Method for planarization of conductive plug |
CN103681309A (en) * | 2012-09-07 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for ultra-thickness metal |
CN103824772A (en) * | 2012-11-19 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | Method for improving rear-end photo-etching registration mark morphology |
CN104979277A (en) * | 2014-04-11 | 2015-10-14 | 中国科学院微电子研究所 | Chemical mechanical planarization process method |
CN106252219A (en) * | 2016-07-29 | 2016-12-21 | 浙江大学 | A kind of method preparing high-flatness on-insulator structure |
CN109986456A (en) * | 2017-12-29 | 2019-07-09 | 长鑫存储技术有限公司 | Chemical mechanical polishing method and system and preparation method of metal plug |
CN110328561A (en) * | 2018-03-30 | 2019-10-15 | 长鑫存储技术有限公司 | The preparation method of chemical and mechanical grinding method, system and metal plug |
CN112247825A (en) * | 2020-09-04 | 2021-01-22 | 北京烁科精微电子装备有限公司 | Chip grinding method |
CN112259501A (en) * | 2020-10-22 | 2021-01-22 | 中国科学院微电子研究所 | Optimization method for contact hole chemical mechanical planarization |
CN115000010A (en) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | Method for forming contact plug |
CN116175298A (en) * | 2023-05-04 | 2023-05-30 | 粤芯半导体技术股份有限公司 | Method for grinding deep contact hole structure of semiconductor |
CN119141331A (en) * | 2024-11-13 | 2024-12-17 | 芯联先锋集成电路制造(绍兴)有限公司 | Chemical Mechanical Polishing |
-
2007
- 2007-12-13 CN CNA2007100945612A patent/CN101456153A/en active Pending
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102019577B (en) * | 2009-09-17 | 2012-11-28 | 中芯国际集成电路制造(上海)有限公司 | Optimization method of chemical mechanical polishing process |
CN103515296B (en) * | 2012-06-26 | 2015-10-14 | 中芯国际集成电路制造(上海)有限公司 | The method of planarization of conductive plug |
CN103515296A (en) * | 2012-06-26 | 2014-01-15 | 中芯国际集成电路制造(上海)有限公司 | Method for planarization of conductive plug |
CN103681309B (en) * | 2012-09-07 | 2017-03-22 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for ultra-thickness metal |
CN103681309A (en) * | 2012-09-07 | 2014-03-26 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for ultra-thickness metal |
CN103824772A (en) * | 2012-11-19 | 2014-05-28 | 上海华虹宏力半导体制造有限公司 | Method for improving rear-end photo-etching registration mark morphology |
CN102945826A (en) * | 2012-11-30 | 2013-02-27 | 上海宏力半导体制造有限公司 | Method for improving contact resistance uniformity |
CN104979277A (en) * | 2014-04-11 | 2015-10-14 | 中国科学院微电子研究所 | Chemical mechanical planarization process method |
CN104979277B (en) * | 2014-04-11 | 2019-06-14 | 中国科学院微电子研究所 | Process method for chemical mechanical planarization of device with size of below 40nm |
CN106252219A (en) * | 2016-07-29 | 2016-12-21 | 浙江大学 | A kind of method preparing high-flatness on-insulator structure |
CN109986456B (en) * | 2017-12-29 | 2020-11-03 | 长鑫存储技术有限公司 | Chemical mechanical polishing method and system and preparation method of metal plug |
CN109986456A (en) * | 2017-12-29 | 2019-07-09 | 长鑫存储技术有限公司 | Chemical mechanical polishing method and system and preparation method of metal plug |
CN110328561A (en) * | 2018-03-30 | 2019-10-15 | 长鑫存储技术有限公司 | The preparation method of chemical and mechanical grinding method, system and metal plug |
CN112247825A (en) * | 2020-09-04 | 2021-01-22 | 北京烁科精微电子装备有限公司 | Chip grinding method |
CN112259501A (en) * | 2020-10-22 | 2021-01-22 | 中国科学院微电子研究所 | Optimization method for contact hole chemical mechanical planarization |
CN115000010A (en) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | Method for forming contact plug |
CN115000010B (en) * | 2022-08-08 | 2022-11-11 | 广州粤芯半导体技术有限公司 | Method for forming contact plug |
CN116175298A (en) * | 2023-05-04 | 2023-05-30 | 粤芯半导体技术股份有限公司 | Method for grinding deep contact hole structure of semiconductor |
CN119141331A (en) * | 2024-11-13 | 2024-12-17 | 芯联先锋集成电路制造(绍兴)有限公司 | Chemical Mechanical Polishing |
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C06 | Publication | ||
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING (BEIJING) INTERNATIONA Effective date: 20121025 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20121025 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant after: Semiconductor Manufacturing International (Shanghai) Corporation Applicant after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Applicant before: Semiconductor Manufacturing International (Shanghai) Corporation |
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C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20090617 |