CN103824772A - Method for improving rear-end photo-etching registration mark morphology - Google Patents
Method for improving rear-end photo-etching registration mark morphology Download PDFInfo
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- CN103824772A CN103824772A CN201210468693.8A CN201210468693A CN103824772A CN 103824772 A CN103824772 A CN 103824772A CN 201210468693 A CN201210468693 A CN 201210468693A CN 103824772 A CN103824772 A CN 103824772A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
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- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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Abstract
The invention discloses a method for improving rear-end photo-etching registration mark morphology. The method comprises the following steps: 1.1 an oxidation film between metal layers is flattened; 1.2 a nitride film is deposited on the oxidation film between the metal layers; 1.3 photo-etching and etching are performed on a bolt hole and a photo-etching registration mark; 1.4 filling and chemical-mechanical grinding are performed on a metal barrier layer and tungsten of the bolt hole; and 1.5 the nitride film is removed. One layer of nitride film is deposited the film between the metal layers to act as the barrier layer for chemical-mechanical grinding of tungsten so that morphology of the edge of the photo-etching registration mark with larger size is effectively protected, and efficiency in alignment of subsequent metal layer photo-etching process is enhanced.
Description
Technical field
The invention belongs to semiconductor integrated circuit manufacturing process, relate to a kind of photoetching technological method, relate in particular to a kind of method of improving rear end lithography registration mark pattern.
Background technology
In integrated circuit (IC) last part technology, metal level is generally with reference to the lithography registration mark of anterior layer keyhole.More than the technique of 0.25 micron, the tungsten that adopts tungsten CMP technique to remove silicon chip surface more, conventionally easily the edge of some larger-size lithography registration marks is produced to damage, follow-up photoetching registration signal is produced to certain impact (seeing Fig. 1 .2).Particularly when in the situation that the thickness of metal interlevel film reduces gradually, the loss of lithography registration marker edge oxide-film makes the boundary of the interior tungsten of lithography registration mark and marker edge not too clearly demarcated, the photoetching of subsequent metal layer just cannot be aimed at effectively, causes production loss.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method of improving rear end lithography registration mark pattern, the efficiency of aiming to improve subsequent optical carving technology.
For solving the problems of the technologies described above, the invention provides a kind of method of improving rear end lithography registration mark pattern, comprise the steps:
1.1 metal interlevel oxide-film planarizations;
1.2 on metal interlevel oxide-film cvd nitride film;
The photoetching of 1.3 keyholes and lithography registration mark and etching;
The metal barrier of 1.4 keyholes and the filling of tungsten and cmp;
The removal of 1.5 nitride films.
Further, in step 1.1, the thickness of described metal interlevel oxide-film is
adopt SACVD, pecvd process deposit.
Further, in step 1.2, the thickness of described nitride film is
adopt pecvd process deposit, deposition temperature scope is 350 ~ 580 ℃, and pressure limit is 1 ~ 10Torr, and radio-frequency power is 100 ~ 1000W, SiH
4flow is 50-200sccm, NH
3flow is 10-80sccm, N
2flow is 7-10L.
Further, in step 1.3, described lithography registration is labeled as the figure of the similar pad of a monoblock, and characteristic size is the lithography registration mark of 2～6 microns, in etching keyhole, the metal interlevel oxide-film of this lithography registration marked region is removed.
Further, step 1.4 is specially: first, and growing metal barrier layer, tungsten successively on total silicon sheet; Then adopt chemical mechanical milling tech to carry out planarization to tungsten, form metal barrier and tungsten in keyhole.Described metal barrier comprises Ti and TiN, and the thickness that is wherein positioned at the Ti of below is
the thickness that is positioned at the TiN of top is
this step adopts metal organic chemical vapor deposition technique, first deposit Ti, and then deposit TiN; The temperature of described deposit TiN is 350 ~ 400 ℃, and pressure is 1 ~ 10torr; The growth of described tungsten adopts chemical vapor deposition method, and the temperature of tungsten deposit is 350 ~ 450 ℃, and pressure is 50 ~ 150torr, and the thickness of tungsten is
described chemical mechanical milling tech terminal stops at nitride film, and because the relative oxide-film of nitride film has higher selection ratio, this nitride film can be protected the edge of lithography registration mark effectively.
Further, in step 1.5, the removal of described nitride film adopts wet method or dry etching, and etching gas or liquid make the metal interlevel oxide-film of the relative tungsten of nitride film and lower floor have very high selection ratio.If the removal of described nitride film adopts dry etch process, etching gas used comprises CF
3and O
2, pressure limit is 20～80mTorr, CF
3flow is 5-60sccm, O
2flow is 5-60sccm.
Compare with existing method; beneficial effect of the present invention is: the present invention by depositing one deck nitride film on metal interlevel film; as the barrier layer of follow-up chemical mechanical polishing of tungsten; effectively protect the pattern of larger-size lithography registration marker edge, thereby improve the efficiency that subsequent metal layer photoetching process is aimed at.
Accompanying drawing explanation
Fig. 1 .1-Fig. 1 .2 be ideally with actual conditions under the contrast schematic diagram of lithography registration mark pattern after cmp; Wherein, Fig. 1 .1 is lithography registration mark pattern schematic diagram ideally, and Fig. 1 .2 is lithography registration mark pattern schematic diagram under actual conditions.
Fig. 2 .1-Fig. 2 .5 is concrete technology flow chart of the present invention; Wherein, Fig. 2 .1 is the generalized section after the inventive method step 1 completes; Fig. 2 .2 is the generalized section after the inventive method step 2 completes; Fig. 2 .3 is that the generalized section (Fig. 2 .3(a) after the inventive method step 3 completes is the schematic diagram that etching forms keyhole, Fig. 2 .3(b) be the schematic diagram that etching forms lithography registration mark); Fig. 2 .4 is that the generalized section (Fig. 2 .4(a) after the inventive method step 4 completes is the schematic diagram of keyhole after step 4 completes, Fig. 2 .4(b) be the schematic diagram of lithography registration mark after step 4 completes); Fig. 2 .5 is that the generalized section (Fig. 2 .5(a) after the inventive method step 5 completes is the schematic diagram of keyhole after step 5 completes, Fig. 2 .5(b) be the schematic diagram of lithography registration mark after step 5 completes);
In figure, description of reference numerals is as follows:
1 is metal interlevel oxide-film, and 2 is metal level, and 3 is nitride film, and 4 is metal barrier and tungsten.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further detailed explanation.
As shown in Fig. 2 .1-Fig. 2 .5, the invention provides a kind of method of improving rear end lithography registration mark pattern, mainly comprise the steps:
1. metal interlevel oxide-film planarization.Depositing metal interlayer oxide-film 1 on metal level 2, the thickness of metal interlevel oxide-film 1 is
can adopt aumospheric pressure cvd SACVD(time), PECVD(plasma enhanced chemical vapor deposition) technique deposit.Adopt CMP (Chemical Mechanical Polishing) process to carry out planarization to metal interlevel oxide-film 1, see Fig. 2 .1.
2. nitride film (stop layer) deposition.Cvd nitride film 3 on metal interlevel oxide-film 1, is shown in Fig. 2 .2; The thickness of nitride film 3 is
can adopt pecvd process deposit, deposition temperature scope is 350 ~ 580 ℃, and pressure limit is 1 ~ 10Torr, RF(radio frequency) power is 100 ~ 1000W, SiH
4flow is 50-200sccm, NH
3flow is 10-80sccm, N
2flow is 7-10L.
3. photoetching and the etching of keyhole and lithography registration mark.Etching forms keyhole and sees Fig. 2 .3(a), etching forms lithography registration mark and sees Fig. 2 .3(b); Lithography registration is labeled as the similar pad(pad of a monoblock) figure, characteristic size is the lithography registration mark of 2～6 microns, in etching keyhole, the metal interlevel oxide-film 1 of this lithography registration marked region is removed, and sees Fig. 2 .3(b).
4. the metal barrier of keyhole and the filling of tungsten and cmp.First growing metal barrier layer, tungsten successively on total silicon sheet; Then adopt chemical mechanical milling tech to carry out planarization to tungsten, form metal barrier and tungsten 4 in keyhole, see Fig. 2 .4(a).Metal barrier comprises Ti and TiN, and the thickness that is wherein positioned at the Ti of below is
the thickness that is positioned at the TiN of top is
this step adopts metal organic chemical vapor deposition technique, first deposit Ti, and then deposit TiN; The temperature of described deposit TiN is 350 ~ 400 ℃, and pressure is 1 ~ 10torr.Tungsten is filled and is adopted chemical vapor deposition method, and the temperature of tungsten deposit is 350 ~ 450 ℃, and pressure is 50 ~ 150torr, and the thickness of tungsten is
chemical mechanical polishing of tungsten process endpoint stop at nitride film 3(by nitride film 3 barrier layer as cmp), because the relative metal interlevel oxide-film 1 of nitride film 3 has higher selection than (selecting than being the ratio of the etch rate of material and the etch rate of mask or bottom of being etched, adopt the high selectivity of nitride film 3 relative metal interlevel oxide-films 1 to mean that the etch rate of nitride film 3 is faster than metal interlevel oxide-film 1, to reduce the loss of metal interlevel oxide-film 1), this nitride film 3 can be protected the edge of lithography registration mark effectively, see Fig. 2 .4(b).
5. nitride film is removed.Fig. 2 .5(a) be the schematic diagram of keyhole after step 5 completes, Fig. 2 .5(b) be the schematic diagram of lithography registration mark after step 5 completes.The removal of nitride film 3 can adopt wet method or dry etching, etching gas or liquid make the metal interlevel oxide-film 1 of the relative metal barrier of nitride film 3 and tungsten 4 and lower floor have very high selection than (selecting than being the ratio of the etch rate of material and the etch rate of mask or bottom of being etched, adopt the high selectivity of the metal interlevel oxide-film 1 of the relative metal barrier of nitride film 3 and tungsten 4 and lower floor to mean that the etch rate of nitride film 3 is faster than the metal interlevel oxide-film 1 of metal barrier and tungsten 4 and lower floor, to reduce the loss of metal interlevel oxide-film 1 of metal barrier and tungsten 4 and lower floor).Take dry etch process as example, etching gas used comprises: CF
3and O
2, pressure limit is 20～80mTorr, CF
3flow is 5-60sccm, O
2flow is 5-60sccm.
Claims (9)
1. a method of improving rear end lithography registration mark pattern, is characterized in that, comprises the steps:
1.1 metal interlevel oxide-film planarizations;
1.2 on metal interlevel oxide-film cvd nitride film;
The photoetching of 1.3 keyholes and lithography registration mark and etching;
The metal barrier of 1.4 keyholes and the filling of tungsten and cmp;
The removal of 1.5 nitride films.
2. the method for claim 1, is characterized in that, in step 1.1, the thickness of described metal interlevel oxide-film is
adopt SACVD, pecvd process deposit.
3. the method for claim 1, is characterized in that, in step 1.2, the thickness of described nitride film is
adopt pecvd process deposit, deposition temperature scope is 350 ~ 580 ℃, and pressure limit is 1 ~ 10Torr, and radio-frequency power is 100 ~ 1000W, SiH
4flow is 50-200sccm, NH
3flow is 10-80sccm, N
2flow is 7-10L.
4. the method for claim 1, it is characterized in that, in step 1.3, described lithography registration is labeled as the figure of the similar pad of a monoblock, characteristic size is the lithography registration mark of 2～6 microns, in etching keyhole, the metal interlevel oxide-film of this lithography registration marked region is removed.
5. the method for claim 1, is characterized in that, step 1.4 is specially: first, and growing metal barrier layer, tungsten successively on total silicon sheet; Then adopt chemical mechanical milling tech to carry out planarization to tungsten, form metal barrier and tungsten in keyhole.
6. the method as described in claim 1 or 5, is characterized in that, in step 1.4, described metal barrier comprises Ti and TiN, and the thickness that is wherein positioned at the Ti of below is
the thickness that is positioned at the TiN of top is
this step adopts metal organic chemical vapor deposition technique, first deposit Ti, and then deposit TiN; The temperature of described deposit TiN is 350 ~ 400 ℃, and pressure is 1 ~ 10torr; The growth of described tungsten adopts chemical vapor deposition method, and the temperature of tungsten deposit is 350 ~ 450 ℃, and pressure is 50 ~ 150torr, and the thickness of tungsten is
7. the method as described in claim 1 or 5; it is characterized in that, in step 1.4, described chemical mechanical milling tech terminal stops at nitride film; because the relative oxide-film of nitride film has higher selection ratio, this nitride film can be protected the edge of lithography registration mark effectively.
8. the method for claim 1, is characterized in that, in step 1.5, the removal of described nitride film adopts wet method or dry etching, and etching gas or liquid make the metal interlevel oxide-film of the relative tungsten of nitride film and lower floor have very high selection ratio.
9. method as claimed in claim 8, is characterized in that, in step 1.5, the removal of described nitride film adopts dry etch process, and etching gas used comprises CF
3and O
2, pressure limit is 20～80mTorr, CF
3flow is 5-60sccm, O
2flow is 5-60sccm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210468693.8A CN103824772A (en) | 2012-11-19 | 2012-11-19 | Method for improving rear-end photo-etching registration mark morphology |
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| CN201210468693.8A CN103824772A (en) | 2012-11-19 | 2012-11-19 | Method for improving rear-end photo-etching registration mark morphology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783803A (en) * | 2016-11-30 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | A kind of method and semiconductor structure for reducing the loss of photo-etching mark figure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1841701A (en) * | 2005-03-18 | 2006-10-04 | 联华电子股份有限公司 | Method of making a plug |
| CN101456153A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Tungsten chemical mechanical polishing method and manufacture method of tungsten plug |
| CN102956543A (en) * | 2011-08-25 | 2013-03-06 | 上海华虹Nec电子有限公司 | Manufacturing method for through silicon via |
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- 2012-11-19 CN CN201210468693.8A patent/CN103824772A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1841701A (en) * | 2005-03-18 | 2006-10-04 | 联华电子股份有限公司 | Method of making a plug |
| CN101456153A (en) * | 2007-12-13 | 2009-06-17 | 中芯国际集成电路制造(上海)有限公司 | Tungsten chemical mechanical polishing method and manufacture method of tungsten plug |
| CN102956543A (en) * | 2011-08-25 | 2013-03-06 | 上海华虹Nec电子有限公司 | Manufacturing method for through silicon via |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106783803A (en) * | 2016-11-30 | 2017-05-31 | 武汉新芯集成电路制造有限公司 | A kind of method and semiconductor structure for reducing the loss of photo-etching mark figure |
| CN106783803B (en) * | 2016-11-30 | 2019-01-25 | 武汉新芯集成电路制造有限公司 | A kind of method and semiconductor structure reducing the loss of photo-etching mark figure |
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Application publication date: 20140528 |