CN107263301B - A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece - Google Patents
A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece Download PDFInfo
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- CN107263301B CN107263301B CN201710495696.3A CN201710495696A CN107263301B CN 107263301 B CN107263301 B CN 107263301B CN 201710495696 A CN201710495696 A CN 201710495696A CN 107263301 B CN107263301 B CN 107263301B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
The present invention provides a kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece, and the method includes at least the step of handling the gallium face of the gallium nitride wafer piece: the gallium nitride wafer piece being fixed on grinding plate first, gallium face is towards grinding head；Then the grinding basal plane that the gallium nitride wafer piece is determined using XRD measurement method, it is the grinding head with certain mesh number is parallel with the grinding basal plane and be overlaid on the gallium face, the gallium face is ground to the first roughness under lapping liquid effect；Then replacement grinding head repeats previous step until the gallium face is ground to the second roughness, second roughness is less than first roughness to more high mesh number；Finally the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, the gallium face is polished to the surface roughness for meeting technique requirement.By means of the present invention it is direct lapping mode, simplifies processing step, reduce supplies consumption, shorten the process time, reduces breakage rate.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, brilliant more particularly to a kind of grinding-chemically mechanical polishing gallium nitride
The method of disk.
Background technique
Currently, either consumption electronic product, electric vehicle (EV) or household electrical appliance, engineer are just facing stringenter want
It asks, it is necessary to promote power supply conversion efficiency, improve power density level, extend service time of battery and accelerate switching speed.This
All all mean that electronic industry will become increasingly dependent on novel power semiconductor, use no longer with silicon (Si) for base
The process technique of plinth.As capacity is likely to be breached unprecedented performance reference, gallium nitride (GaN) just becomes an emerging system
Journey technology influences the future development of power electronic system design.In any power system design, power supply to a certain degree is converted
Loss is affirmative, but due to wideband gap, GaN obviously shows lower loss than silicon, this also means that better power supply
Convert efficiency.Because GaN wafer is smaller than equivalent silicon wafer, can be placed in using the element of this technology smaller
Encapsulation specification in.Due to its high fluidity, GaN efficiency in the circuit for requiring high-speed switch is high.Moreover, improve
Switching speed also contributes to saving space to be made in matched magnetic element because passive device contained by power circuit can be less
Coil can be smaller.In addition, the higher power supply conversion efficiency that GaN is provided means less heat dissipation capacity, reducing is needed
Distribute to the space of heat management.Since GaN has some and silicon different from key function, enables it be particularly suitable for power and answer
With.
The final step of production gallium nitride wafer piece is to need its surface carrying out planarization Operation, obtains high-flatness
Smooth surface.As semi-conductor industry develops rapidly, size of electronic devices reduces, and the requirement for wafer surface flatness is more next
It is higher, and need to meet simultaneously from processing performance and speed the requirement of wafer showing methods.At present substantially by grinding
It realizes and is surface-treated with CMP process, be roughly divided into thinned, corase grinding, fine grinding, rough polishing, fine polishing and essence and throw.Wherein, subtract
Thin, corase grinding and fine grinding are referred to as grinding, and rough polishing, fine polishing and essence, which are thrown, to be referred to as chemically-mechanicapolish polishing.The purpose of grinding is to reduce to stick up
Curvature reduces surface damage layer, reduces surface roughness etc..Rough polishing is mainly the damaged layer of significantly thinned wafer piece, table
Surface roughness is reduced to 100nm or less.Fine polishing mainly control surface roughness, reach 10nm hereinafter, reduce defect concentration,
And surface is planarized.Finishing polish is last polishing step, and fixed point planarization and polishing can be carried out to wafer, real
Existing high quality and high-precision wafer.Process is tedious for the above grinding and polishing, and single equipment is unable to satisfy multi-process demand, per pass
Process requires its corresponding equipment, causes production cost odd high, this is also high main of gallium nitride wafer piece price
One of reason.
The thickness of modern IC chip is usually less than 300 microns, so needing before making chip to wafer
Carry out reduction processing.Grinding and polishing treatment then are carried out to thinned wafer piece.With the reduction of thickness, hard & brittle wafer
Breakage risk can increase, and the process time is long, and supplies consumption is also very big, compare and silicon wafer, the grinding of hard & brittle wafer and
Polishing step needs to carry out the improvement of technique and equipment.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of grinding-chemically mechanical polishings
The method of gallium nitride wafer piece, for solving to carry out surface treatment to hard & brittle wafer in the prior art, breakage rate rate is high asks
Topic.
In order to achieve the above objects and other related objects, it is brilliant to provide a kind of grinding-chemically mechanical polishing gallium nitride by the present invention
The method of disk, the method include at least the step of handling the gallium face of the gallium nitride wafer piece, comprising:
1) the gallium nitride wafer piece is fixed on grinding plate, the gallium face is towards grinding head；
2) the grinding basal plane that the gallium nitride wafer piece is determined using XRD measurement method, by the grinding with certain mesh number
Head is parallel with the grinding basal plane and is overlaid on the gallium face of the gallium nitride wafer piece, by the gallium face under lapping liquid effect
It is ground to the first roughness；
3) replacement grinding head repeats step 2) until the gallium face is ground to the second roughness to more high mesh number；
4) the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, by the gallium face of the gallium nitride wafer piece
It is polished to the surface roughness for meeting technique requirement.
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the step
1) rapid includes: to clean the gallium nitride wafer piece first, then consolidated the gallium nitride wafer piece in the way of vacuum suction
Due on grinding plate, the gallium face is towards grinding head.
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the step
It is rapid 2) in, the grinding basal plane of the gallium nitride wafer piece is determined using XRD measurement method, it is then flat by adjusting the grinding
Platform keeps the grinding head parallel with the grinding basal plane, and using deionized water as lapping liquid and coolant, it is described go from
Under the action of sub- water, the grinding head is with the direction high speed rotation opposite with the grinding plate, so that the gallium face be ground
To the first roughness.
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the step
It is rapid 2) in the first roughness be no more than 10 microns.
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the step
It is rapid 2) in, the grinding head mesh number be no more than 6000 mesh, the grinding head area be more than wafer area at least 25%, it is described to grind
Bistrique revolving speed is not less than 800r/min, and the grinding plate rotation speed is not less than 100r/min, the grinding plate rotation speed
Degree is not higher than grinding head rotation speed, and the grinding rate in the gallium nitride wafer piece gallium face is no more than 50 microns/min.
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the step
It is rapid 3) in the second roughness be no more than 5nm.
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the step
It is rapid 3) in, the grinding head mesh number be not less than 6000 mesh, the grinding head area be more than wafer area at least 25%, it is described to grind
Bistrique revolving speed is not less than 600r/min, and the grinding plate rotation speed is not less than 100r/min, the grinding plate rotation speed
Degree is not higher than grinding head rotation speed, and the grinding thickness in the gallium nitride wafer piece gallium face is no more than 50 microns.
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the step
It is rapid 4) in when being chemically-mechanicapolish polished, using silica containing polishing fluid, wherein the silicon dioxide ratio is no more than institute again
Polishing fluid 50% is stated, the particle mean size of the silica is no more than 100nm；The pH range of the polishing fluid be 4 to
Between 12；The gallium nitride wafer piece pressure is no more than 300g/cm2。
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the step
It is rapid 4) in, the surface roughness be 1nm or less.
A kind of scheme of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, the side
Method further includes the steps that the nitrogen face to the gallium nitride wafer piece is handled:
The scheme of a kind of optimization as grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method, to described
It further include the step ground to the nitrogen face of the gallium nitride wafer piece after the gallium face of gallium nitride wafer piece carries out the processing
It is rapid:
The gallium face of the gallium nitride wafer piece is fixed on the grinding plate, replace grinding head, the nitrogen face towards
The grinding head, the mesh number of the grinding head is not higher than the grinding head mesh number used when grinding the gallium face, pressure and lapping liquid
It is consistent, it is vertical with the grinding head direction of travel to adjust the grinding plate；
The nitrogen face is ground to the surface roughness for meeting technique requirement using the grinding head.
As described above, grinding of the invention-chemically mechanical polishing gallium nitride wafer piece method, the method include at least
The step of handling the gallium face of the gallium nitride wafer piece: the gallium nitride wafer piece is fixed on grinding plate first
On, the gallium face is towards grinding head；Then the grinding basal plane that the gallium nitride wafer piece is determined using XRD measurement method, will have
There is the grinding head of certain mesh number parallel with the grinding basal plane and be overlaid on the gallium face of the gallium nitride wafer piece, in lapping liquid
The gallium face is ground to the first roughness under effect；Then replacement grinding head repeats step 2) until by institute to more high mesh number
It states gallium face and is ground to the second roughness；Finally the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, it will be described
The gallium face of gallium nitride wafer piece is polished to the surface roughness for meeting technique requirement.Grinding provided by the invention-chemical machinery is thrown
Light method is direct lapping mode, avoids to roughly grind using fine grinding machine, is thinned and precision grinding step is unified for grinding steps, drop
Systematic error caused by low multi-process and fragmentation risk simplify processing step under the premise of guaranteeing grinding effect, drop
The process time is shortened in low supplies consumption, reduces breakage rate, and the fixed wafer sheet mode of the binder that discards tradition improves grinding and polishing
Precision reduces wafer cleaning step.
Detailed description of the invention
Fig. 1 is grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method flow diagram.
Fig. 2 is the structural schematic diagram of milling apparatus in grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method.
Fig. 3 is the knot of chemical-mechanical polisher in grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method
Structure schematic diagram.
Component label instructions
S1~S4 step
1 gallium nitride wafer piece
2 grinding heads, rubbing head
3 grinding plates, polishing block
4 polishing pads
5 lapping liquids, polishing fluid
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to attached drawing.It should be noted that only the invention is illustrated in a schematic way for diagram provided in the present embodiment
Basic conception, only shown in schema then with related component in the present invention rather than component count, shape when according to actual implementation
Shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its component cloth
Office's kenel may also be increasingly complex.
As shown in Figure 1, present embodiment provides a kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece, it is described
Method includes at least the step of handling the gallium face of the gallium nitride wafer piece, and steps are as follows:
Step S1 is first carried out, as shown in Fig. 2, the gallium nitride wafer piece 1 is fixed on 3 on grinding plate, the gallium
Face is towards grinding head 2.
In this step, it is preferable that be fixed before grinding, can first be cleaned to the gallium nitride wafer piece 1, so
The gallium nitride wafer piece 1 is fixed on grinding plate 3 in the way of vacuum suction afterwards, gallium face is towards grinding head 2.
The mode of the cleaning is unlimited, if can by pollutant removals such as dusts on the gallium nitride wafer piece 1,
Such as can be cleaned with deionized water, then with being dried with nitrogen.
The vacuum suction mode is, using the absorption stomata (not illustrated) in absorption platform by vacuumizing to institute
It states gallium nitride wafer 1 to be adsorbed, to realize that gallium nitride wafer piece 1 is fixed.More preferably, the absorption stomata is evenly distributed on
In the absorption platform, and wafer unit stress is not less than 5N/cm2It is advisable.It can be reduced by the way of vacuum suction
Link is cleaned, the movement of the gallium nitride wafer piece 1 is avoided and grinds the change of basal plane.Certainly, in addition to vacuum suction mode,
It can use other suitable mode the gallium nitride wafer piece 1 is fixed on the grinding plate 3.
Then step S2 is executed, as shown in Fig. 2, determining the grinding basal plane of the gallium nitride wafer piece 1, there will be certain mesh
Several grinding heads 2 is parallel with the grinding basal plane and is overlaid on the gallium face of the gallium nitride wafer piece 1, acts in lapping liquid 5
It is lower that the gallium face is ground to the first roughness.
The surface crystal of the gallium nitride wafer piece grown in the commercialization and industry that usual market provides for device and film
Orientation is (0001) face, current embodiment require that facing (0101) face from (0001) deviates 0.1~0.4 degree, in this, as grinding base
Face (also referred to as processing plane), thus obtained surface can preferably meet the production needs of back segment device.
The mode for obtaining the grinding basal plane is unlimited, and the present embodiment uses XRD measurement method preferably to obtain described in determination
Grind basal plane.Internal crystal structure is measured by the X-ray in XRD instrument, X-ray passes through the lattice diffraction of crystals
Afterwards, the specific region in space can be traveled to, angle is fixed, and the drift angle of actual value and theoretical value is grinding basal plane to be measured
With the drift angle of grinding plate.Therefore, before grinding technics progress, gallium nitride wafer piece is fixed on grinding plate, is penetrated by X
The diffraction of line can obtain the drift angle of grinding basal plane and grinding plate 3 to be measured, adjust grinding plate 3 with this drift angle, so that grinding
Basal plane is parallel with the abradant surface of grinding head 2 (vertical with the direction of travel of the grinding head 2).
It needs to add lapping liquid 5 to lapped face while being ground, plays wetting and cooling effect.The present embodiment
In, it is preferred to use furthermore deionized water can add a small amount of activating agent as lapping liquid and coolant in deionized water, enhancing
Wetting function and grinding effect.Gallium nitride material has preferable tolerance to acid solution under room temperature, but can be molten by alkalinity
Liquid etching, needs to consider this point when configuring lapping liquid.During the grinding process, the present embodiment is preferably only with deionized water.Its
Advantage is that deionized water is cheap, and generated heat in technique can be effectively reduced, and as coolant, takes away grinding
Generate substance；Itself also has very weak corrosive power, can serve as the effect of a part of lapping liquid.
Under the wetting and cooling effect of deionized water, 2 high speed rotation of grinding head grinds the gallium nitride wafer piece
1, and grinding plate 3 then rotates in opposite directions, until it is coarse that the gallium face grinding of the gallium nitride wafer piece 1 is reached first
Degree.
First roughness is to be no more than 10 microns.Preferably, first roughness is no more than 5 microns.More preferably,
First roughness is no more than 3 microns.In the present embodiment, first roughness is 1 micron.
As shown in Fig. 2, the grinding head 2 needs all to cover the gallium nitride wafer piece 1, and described when grinding
The rotation speed of grinding head 2 needs the rotation speed higher than the grinding plate 3.
As an example, 2 mesh number of the grinding head in this step is no more than 6000 mesh, 2 area of grinding head is more than crystalline substance
Disk area at least 25%, 2 revolving speed of grinding head are not less than 800r/min, and 3 rotation speed of grinding plate is not less than
The grinding rate of 100r/min, the 1 gallium face of gallium nitride wafer piece are no more than 50 microns/min.
More preferably, 2 mesh number of grinding head is no more than 5000 mesh, and 2 area of grinding head is at least more than wafer area
30%, 2 revolving speed of grinding head is not less than 850r/min, and 3 rotation speed of grinding plate is not less than 120r/min, the nitrogen
The grinding rate for changing 1 gallium face of gallium wafer is no more than 45 microns/min.
Optimally, 2 mesh number of grinding head is no more than 4000 mesh, and 2 area of grinding head is at least more than wafer area
35%, 2 revolving speed of grinding head is not less than 880r/min, and 3 rotation speed of grinding plate is not less than 125r/min, the nitrogen
The grinding rate for changing 1 gallium face of gallium wafer is no more than 40 microns/min.
Then, step S3 is executed, replacement grinding head 2 to more high mesh number repeats step S2 until the gallium face is ground to
Second roughness.
Preferably, after replacing grinding head, the grinding basal plane can be corrected, using XRD measurement method again to prevent institute
State grinding basal plane replacement grinding head retrodeviate from.
The mesh number of the used grinding head 2 of this grinding needs higher, available better surface roughness.As showing
Example, 2 mesh number of grinding head are not less than 6000 mesh, and 2 area of grinding head is more than wafer area at least 25%, the grinding
First 2 revolving speed is not less than 600r/min, and 3 rotation speed of grinding plate is not less than 100r/min, and the grinding plate 3 rotates speed
Degree is not higher than 2 rotation speed of grinding head, and the grinding thickness in the 1 gallium face of gallium nitride wafer piece is no more than 50 microns.
More preferably, 2 mesh number of grinding head is not less than 7000 mesh, and 2 area of grinding head is at least more than wafer area
30%, 2 revolving speed of grinding head is not less than 700r/min, and 3 rotation speed of grinding plate is not less than 120r/min, described to grind
3 rotation speed of platform is polished not higher than 2 rotation speed of grinding head, the grinding thickness in the 1 gallium face of gallium nitride wafer piece is no more than 45
Micron.
Optimally, 2 mesh number of grinding head is not less than 8000 mesh, and 2 area of grinding head is at least more than wafer area
35%, 2 revolving speed of grinding head is not less than 800r/min, and 3 rotation speed of grinding plate is not less than 150r/min, described to grind
3 rotation speed of platform is polished not higher than 2 rotation speed of grinding head, the grinding thickness in the 1 gallium face of gallium nitride wafer piece is no more than 40
Micron.
It is ground by second, it is even lower that the roughness (the second roughness) in the gallium face can reach 5nm.Carry out the
After secondary grinding, the gallium nitride wafer piece 1 is cleaned, removes the abrasive material bits on the gallium nitride wafer piece 1.
Step S4 is finally executed, the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, by the nitridation
The gallium face of gallium wafer is polished to the surface roughness for meeting technique requirement.
Specifically, it is illustrated in figure 3 the basic composition of chemical-mechanical polisher, mainly includes rubbing head 2, polishing block 3
With the polishing pad 4 being located on polishing block 3.Wherein, gallium nitride 1 is fixed on the rubbing head 2, by 1 gallium of gallium nitride
Face is mounted on lower section, and nitrogen face is connect with the rubbing head 2.Polishing fluid 5 is sprayed on polishing pad 4, rubbing head 2 provide it is certain under
Pressure directly bears against 1 gallium face of gallium nitride on polishing fluid 5 and polishing pad 4, then opposite by rubbing head 2 and polishing block 3
The rotation in direction and the pH value for adjusting polishing fluid 5 realize the polishing to the gallium nitride 1 after grinding.
As an example, when being chemically-mechanicapolish polished, using silica containing polishing fluid 5, wherein the silica
Specific gravity is no more than the polishing fluid 50%, and the particle mean size of the silica is no more than 100nm；The polishing fluid 5
PH value controls between 4 to 12；1 pressure of gallium nitride wafer piece is no more than 300g/cm2。
More preferably, the silica specific gravity is no more than the polishing fluid 40%, and the particle of the silica is averaged ruler
It is very little to be no more than 90nm；1 pressure of gallium nitride wafer piece is no more than 250g/cm2。
In the present embodiment, the silica specific gravity is the 30% of the polishing fluid, and the particle of the silica is average
Having a size of 90nm；The polishing fluid 5 is alkalinity, pH value 10.5；1 pressure of gallium nitride wafer piece is no more than 200g/
cm2。
In another embodiment, acid silicon dioxide polishing fluid also can be used, reduce the corruption to gallium nitride wafer piece surface
Erosion, pH value are controlled 4.5 to 5, and wafer pressure is in 220g/cm2To 350g/cm2, other parameters are consistent with the present embodiment.By
When using acid polishing slurry, gallium nitride wafer piece surface is corroded speed reduction, therefore used polish pressure is higher than
Used polish pressure when using alkalescence polishing liquid.
By chemically mechanical polishing, the surface roughness in the gallium face can be further reduced to 1nm hereinafter, reaching institute
The technique production for stating gallium nitride wafer piece requires.
It, can be fast and effeciently thick by gallium nitride wafer piece surface above by grinding and CMP process is combined
Rugosity processing reaches the rank for meeting technique requirement, and processing step is simple, is all made of corase grinding mode and realizes, reduces disappearing for material
Consumption shortens the process time, reduces breakage rate.
It, can also be to the nitrogen face of the gallium nitride wafer piece after the gallium surface treatment technique for carrying out the gallium nitride wafer piece
It is ground, grinding number is determined according to customer requirement, if roughness is required to reach Nano grade, needs to carry out
It grinds, if requiring lower, is then once ground twice.The nitrogen face is the surface opposite with the gallium face.
The step of grinding to the nitrogen face can carry out between the step S3 and S4, can also step S4 it
After carry out.
Specifically: the gallium face is fixed on the grinding plate, nitrogen face is towards the grinding head.Adjust grinding plate
Vertical with grinding head direction of travel, the grinding basal plane in nitrogen face just determines at this time, and the grinding head is recycled to grind the nitrogen face
To the surface roughness for meeting technique requirement.After the completion of the gallium face and nitrogen surface treatment, the thickness of gallium nitride wafer piece entirety is equal
It is even.
Compared to the gallium face, due to material difference, the grinding in the nitrogen face can be more easier, therefore, grind to the nitrogen face
The mesh number of grinding head required for grinding is lower, and grinding pressure is also smaller, does not also need to carry out polishing process after grinding.Described in grinding
Pressure when the grinding head mesh number in nitrogen face is not higher than the mesh number for grinding grinding head used by gallium face, grinding pressure and grinding gallium face
It is consistent.
For example, used grinding head mesh number is 4000 mesh and 8000 to 30000 mesh when grinding gallium face, and when grinding nitrogen face
Used grinding head mesh number is 2000 to 4000 mesh and 6000 to 20000 mesh, and the spent time is longer than grinding gallium face, and grinding is thick
Degree is fewer than grinding gallium face, and final surface roughness is slightly below the surface roughness in gallium face after grinding.
In conclusion the present invention provides a kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece, the method is extremely
Include the steps that the gallium face to the gallium nitride wafer piece is handled less: the gallium nitride wafer piece being fixed on grinding first
On platform, gallium is face-up；Then the grinding basal plane for determining the gallium nitride wafer piece, by with certain mesh number grinding head and institute
It states grinding basal plane in parallel and is overlaid on the gallium face of the gallium nitride wafer piece, be ground to the gallium face under lapping liquid effect
First roughness；Then replacement grinding head repeats step 2) until the gallium face is ground to the second roughness to more high mesh number；
Finally the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, the gallium face of the gallium nitride wafer piece is polished to
Meet the surface roughness of technique requirement.By means of the present invention directly to roughly grind mode, processing step is simplified, object is reduced
Material consumption, shortens the process time, reduces breakage rate.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (8)
1. a kind of grinding-chemically mechanical polishing gallium nitride wafer piece method, which is characterized in that the method is included at least to institute
State the step of gallium face of gallium nitride wafer piece is handled, comprising:
1) the gallium nitride wafer piece is fixed on grinding plate, the gallium face is towards grinding head；
2) the grinding basal plane that the gallium nitride wafer piece is determined using XRD measurement method, by with certain mesh number grinding head with
The grinding basal plane is parallel and is overlaid on the gallium face of the gallium nitride wafer piece, grinds the gallium face under lapping liquid effect
To the first roughness, wherein the grinding head is with the direction high speed rotation opposite with the grinding plate, first roughness
No more than 10 microns；
3) replacement grinding head is to more high mesh number, repeats step 2) until the gallium face is ground to the second roughness, and described second
Roughness is less than first roughness, and second roughness is no more than 5nm；
4) the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, the gallium face of the gallium nitride wafer piece is polished
To the surface roughness for meeting technique requirement.
2. grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece method, it is characterised in that: described
Step 1) includes: to clean the gallium nitride wafer piece first, then by the gallium nitride wafer piece in the way of vacuum suction
It is fixed on grinding plate, the gallium face is towards grinding head.
3. grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece method, it is characterised in that: described
In step 2), the grinding basal plane of the gallium nitride wafer piece is determined using XRD measurement method, then by adjusting the grinding
Platform keeps the grinding head parallel with the grinding basal plane, and is gone as lapping liquid and coolant described using deionized water
Under the action of ionized water, so that the gallium face is ground to the first roughness.
4. grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece method, it is characterised in that: described
In step 2), the grinding head mesh number is no more than 6000 mesh, and the grinding head area is more than wafer area at least 25%, described
Grinding head revolving speed is not less than 800r/min, and the grinding plate rotation speed is not less than 100r/min, the grinding plate rotation
Speed is not higher than grinding head rotation speed, and the grinding rate in the gallium nitride wafer piece gallium face is no more than 50 microns/min.
5. grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece method, it is characterised in that: described
In step 3), the grinding head mesh number is not less than 6000 mesh, and the grinding head area is more than wafer area at least 25%, described
Grinding head revolving speed is not less than 600r/min, and the grinding plate rotation speed is not less than 100r/min, the grinding plate rotation
Speed is not higher than grinding head rotation speed, and the grinding thickness in the gallium nitride wafer piece gallium face is no more than 50 microns.
6. grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece method, it is characterised in that: described
When being chemically-mechanicapolish polished in step 4), using silica containing polishing fluid, wherein the silicon dioxide ratio is no more than again
The particle mean size of the polishing fluid 50%, the silica is no more than 100nm；The pH range of the polishing fluid is 4
To between 12；The gallium nitride wafer piece pressure is no more than 300g/cm2。
7. grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece method, it is characterised in that: described
In step 4), the surface roughness is 1nm or less.
8. grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece method, it is characterised in that: to institute
It further include being ground to the nitrogen face of the gallium nitride wafer piece after the gallium face progress processing for stating gallium nitride wafer piece
Step:
The gallium face of the gallium nitride wafer piece is fixed on the grinding plate, grinding head, the mesh number of the grinding head are replaced
Not higher than the grinding head mesh number used when grinding the gallium face, the nitrogen face adjusts the grinding plate towards the grinding head
It is vertical with the grinding head direction of travel；
The nitrogen face is ground to the surface roughness for meeting technique requirement using the grinding head.
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| EP1814149A4 (en) * | 2005-01-12 | 2009-04-29 | Sumitomo Electric Industries | METHOD FOR ABRASING GaN SUBSTRATE |
| CN101673668A (en) * | 2009-10-19 | 2010-03-17 | 中国电子科技集团公司第四十六研究所 | Method for polishing gallium nitride crystals |
| CN102403434A (en) * | 2011-11-23 | 2012-04-04 | 杭州士兰明芯科技有限公司 | Method for manufacturing vertical LED chip |
| CN202572118U (en) * | 2012-04-24 | 2012-12-05 | 正恩科技有限公司 | Thinning structure for light emitting diode wafer |
| CN104810270A (en) * | 2014-01-28 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Grinding method |
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|---|---|---|---|---|
| EP1814149A4 (en) * | 2005-01-12 | 2009-04-29 | Sumitomo Electric Industries | METHOD FOR ABRASING GaN SUBSTRATE |
| CN101673668A (en) * | 2009-10-19 | 2010-03-17 | 中国电子科技集团公司第四十六研究所 | Method for polishing gallium nitride crystals |
| CN102403434A (en) * | 2011-11-23 | 2012-04-04 | 杭州士兰明芯科技有限公司 | Method for manufacturing vertical LED chip |
| CN202572118U (en) * | 2012-04-24 | 2012-12-05 | 正恩科技有限公司 | Thinning structure for light emitting diode wafer |
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