CN107263301A - A kind of method that abrasive chemical mechanically polishes gallium nitride wafer piece - Google Patents
A kind of method that abrasive chemical mechanically polishes gallium nitride wafer piece Download PDFInfo
- Publication number
- CN107263301A CN107263301A CN201710495696.3A CN201710495696A CN107263301A CN 107263301 A CN107263301 A CN 107263301A CN 201710495696 A CN201710495696 A CN 201710495696A CN 107263301 A CN107263301 A CN 107263301A
- Authority
- CN
- China
- Prior art keywords
- grinding
- gallium nitride
- wafer piece
- nitride wafer
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000000126 substance Substances 0.000 title abstract description 5
- 238000000227 grinding Methods 0.000 claims abstract description 224
- 238000005498 polishing Methods 0.000 claims abstract description 78
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 76
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 76
- 230000003746 surface roughness Effects 0.000 claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 230000000694 effects Effects 0.000 claims abstract description 12
- 238000012545 processing Methods 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 239000012530 fluid Substances 0.000 claims description 17
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 8
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 5
- 239000002826 coolant Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 13
- 235000012431 wafers Nutrition 0.000 description 27
- 229910002601 GaN Inorganic materials 0.000 description 12
- 238000005457 optimization Methods 0.000 description 10
- 230000008859 change Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of method that abrasive chemical mechanically polishes gallium nitride wafer piece, the step of methods described at least includes handling the gallium face of the gallium nitride wafer piece：The gallium nitride wafer piece is fixed on grinding plate first, gallium face is towards grinding head；Then the grinding basal plane of the gallium nitride wafer piece is determined using XRD measuring methods, the grinding head with certain mesh number is parallel and be overlaid on the gallium face with the grinding basal plane, the gallium face is ground to the first roughness under lapping liquid effect；Then grinding head is changed to more high mesh number, repeats previous step until the gallium face is ground into the second roughness, second roughness is less than first roughness；Finally the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, by the gallium mirror polish to the surface roughness for meeting technological requirement.It is direct lapping mode by the method for the present invention, simplifies processing step, reduce supplies consumption, shorten the process time, reduces breakage rate.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of grinding-chemically mechanical polishing gallium nitride is brilliant
The method of disk.
Background technology
At present, either consumption electronic product, electric car (EV) or household electrical appliance, engineer just will in face of stricter
Ask, it is necessary to lift Power convert efficiency, improve power density level, extension service time of battery and accelerate switching speed.This
All all mean that electronic industry will become increasingly dependent on new power semiconductor, use no longer with silicon (Si) as base
The process technique of plinth.As capacity is likely to be breached unprecedented performance reference, gallium nitride (GaN) just turns into an emerging system
Journey technology, the future development of influence power electronic system design.In any power system design, Power convert to a certain degree
Loss is affirmative, but due to wideband gap, GaN substantially shows lower loss than silicon, this also means that preferably power supply
Change efficiency.Because GaN wafers are smaller than equivalent silicon wafer, it can be placed in using the element of this technology smaller
Encapsulation specification in.Due to its high fluidity, GaN efficiency in the circuit for requiring high-speed switch is high.Moreover, improve
Switching speed also contributes to save space, because passive device contained by power circuit can be less, makes in supporting magnetic element
Coil can be smaller.In addition, the higher Power convert efficiency that GaN is provided means less heat dissipation capacity, reducing needs
Distribute to the space of heat management.Because GaN has some and the otherwise varied key function of silicon, making it be particularly suitable for power should
With.
The final step for making gallium nitride wafer piece is to need its surface carrying out planarization Operation, obtains high-flatness
Smooth surface.As semi-conductor industry is developed rapidly, size of electronic devices reduces, and the requirement for wafer surface flatness is more next
It is higher, and need to meet the requirement of wafer showing methods simultaneously from processing characteristics and speed.At present substantially by grinding
Realize and be surface-treated with CMP process, be roughly divided into thinned, corase grind, fine grinding, rough polishing, fine polishing and essence and throw.Wherein, subtract
Thin, corase grind and fine grinding are referred to as grinding, and rough polishing, fine polishing and essence, which are thrown, is referred to as chemically mechanical polishing..The purpose of grinding is stuck up for reduction
Curvature, reduces surface damage layer, reduces surface roughness etc..Rough polishing is mainly the damaged layer of significantly thinned wafer piece, table
Surface roughness is reduced to below 100nm.Fine polishing is mainly control surface roughness, reaches below 10nm, reduces defect concentration,
And surface is planarized.Finishing polish is last polishing step, and fixed point planarization and polishing can be carried out to wafer, real
Existing high-quality and high-precision wafer.Above grinding and polishing tedious process, single equipment can not meet multiple operation demand, per pass
Process is required for its corresponding equipment, causes production cost very high, and this is also high main of gallium nitride wafer piece price
One of reason.
The thickness of modern IC chip is usually less than 300 microns, so, it is necessary to wafer before chip is made
Carry out reduction processing.Then thinned wafer piece is ground and polishing.With the reduction of thickness, hard ＆ brittle wafer
Breakage risk can be raised, and the process time is long, and supplies consumption is also very big, compares and silicon wafer, the grinding of hard ＆ brittle wafer and
Polishing step needs to carry out the improvement of technique and equipment.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of grinding-chemically mechanical polishing
The method of gallium nitride wafer piece, for solving to carry out surface treatment to hard ＆ brittle wafer in the prior art, breakage rate rate is high asks
Topic.
In order to achieve the above objects and other related objects, the present invention provides a kind of grinding-chemically mechanical polishing gallium nitride crystalline substance
The method of disk, the step of methods described at least includes handling the gallium face of the gallium nitride wafer piece, including：
1) the gallium nitride wafer piece is fixed on grinding plate, the gallium face is towards grinding head；
2) the grinding basal plane of the gallium nitride wafer piece is determined using XRD measuring methods, by the grinding with certain mesh number
Head is parallel with the grinding basal plane and is overlaid on the gallium face of the gallium nitride wafer piece, by the gallium face under lapping liquid effect
It is ground to the first roughness；
3) grinding head is changed to more high mesh number, repeat step 2) until the gallium face is ground into the second roughness；
4) the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, by the gallium face of the gallium nitride wafer piece
It is polished to the surface roughness for meeting technological requirement.
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the step
It is rapid 1) to include：The gallium nitride wafer piece is cleaned first, is then consolidated the gallium nitride wafer piece using the mode of vacuum suction
Due on grinding plate, the gallium face is towards grinding head.
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the step
It is rapid 2) in, the grinding basal plane of the gallium nitride wafer piece is determined using XRD measuring methods, it is then flat by adjusting the grinding
Platform makes the grinding head parallel with the grinding basal plane, and using deionized water as lapping liquid and cooling agent, it is described go from
In the presence of sub- water, the grinding head is rotated at a high speed with the direction opposite with the grinding plate, so that the gallium face be ground
To the first roughness.
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the step
It is rapid 2) in the first roughness be no more than 10 microns.
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the step
It is rapid 2) in, the grinding head mesh number be no more than 6000 mesh, the grinding head area exceed wafer area at least 25%, it is described to grind
Bistrique rotating speed is not less than 800r/min, and the grinding plate rotary speed is not less than 100r/min, the grinding plate rotation speed
Degree is not higher than grinding head rotary speed, and the grinding rate in the gallium nitride wafer piece gallium face is no more than 50 microns/min.
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the step
It is rapid 3) in the second roughness be no more than 5nm.
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the step
It is rapid 3) in, the grinding head mesh number is not less than 6000 mesh, and the grinding head area exceedes wafer area at least 25%, described to grind
Bistrique rotating speed is not less than 600r/min, and the grinding plate rotary speed is not less than 100r/min, the grinding plate rotation speed
Degree is not higher than grinding head rotary speed, and the grinding thickness in the gallium nitride wafer piece gallium face is no more than 50 microns.
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the step
It is rapid 4) in when being chemically-mechanicapolish polished, using silica containing polishing fluid, wherein the silicon dioxide ratio is again no more than institute
Polishing fluid 50% is stated, the particle mean size of the silica is no more than 100nm；The pH range of the polishing fluid be 4 to
Between 12；The gallium nitride wafer piece pressure is no more than 300g/cm2。
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the step
It is rapid 4) in, the surface roughness be below 1nm.
It is used as a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, the side
The step of method also includes handling the nitrogen face of the gallium nitride wafer piece：
As a kind of scheme of optimization of the method for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece, to described
The gallium face of gallium nitride wafer piece is carried out after the processing, in addition to the step being ground to the nitrogen face of the gallium nitride wafer piece
Suddenly：
The gallium face of the gallium nitride wafer piece is fixed on the grinding plate, change grinding head, the nitrogen face towards
The grinding head, the mesh number of the grinding head is not higher than the grinding head mesh number ground and used during the gallium face, pressure and lapping liquid
It is consistent, adjusts the grinding plate vertical with the grinding head direct of travel；
The nitrogen face is ground to the surface roughness for meeting technological requirement using the grinding head.
As described above, the method for grinding-chemically mechanical polishing gallium nitride wafer piece of the present invention, methods described at least includes
The step of handling the gallium face of the gallium nitride wafer piece：The gallium nitride wafer piece is fixed on grinding plate first
On, the gallium face is towards grinding head；Then the grinding basal plane of the gallium nitride wafer piece is determined using XRD measuring methods, will be had
There is the grinding head of certain mesh number parallel with the grinding basal plane and be overlaid on the gallium face of the gallium nitride wafer piece, in lapping liquid
The gallium face is ground to the first roughness under effect；Then grinding head is changed to more high mesh number, repeat step 2) until by institute
State gallium face and be ground to the second roughness；Finally the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, will be described
The gallium mirror polish of gallium nitride wafer piece is to the surface roughness for meeting technological requirement.The grinding that the present invention is provided-chemical machinery is thrown
Light method is direct lapping mode, it is to avoid uses fine grinding machine, will roughly grind, and is thinned and precision grinding step unification is grinding steps, drop
Systematic error and fragmentation risk caused by low multiple operation, processing step is simplified on the premise of grinding effect is ensured, is dropped
Low supplies consumption, shortens the process time, reduces breakage rate, and the binding agent that discards tradition fixes wafer sheet mode, improves grinding and polishing
Precision, reduces wafer cleaning step.
Brief description of the drawings
Fig. 1 is the method flow diagram of grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece.
Fig. 2 for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method in milling apparatus structural representation.
Fig. 3 for grinding of the present invention-chemically mechanical polishing gallium nitride wafer piece method in chemical-mechanical polisher knot
Structure schematic diagram.
Component label instructions
S1~S4 steps
1 gallium nitride wafer piece
2 grinding heads, rubbing head
3 grinding plates, polishing block
4 polishing pads
5 lapping liquids, polishing fluid
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
Shape and size are drawn, and it is actual when implementing kenel, quantity and the ratio of each component can be a kind of random change, and its component cloth
Office's kenel may also be increasingly complex.
As shown in figure 1, present embodiment provides a kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece, it is described
The step of method at least includes handling the gallium face of the gallium nitride wafer piece, step is as follows：
Step S1 is first carried out, as shown in Fig. 2 the gallium nitride wafer piece 1 is fixed on 3 on grinding plate, the gallium
Face is towards grinding head 2.
In this step, it is preferable that be fixed before grinding, first the gallium nitride wafer piece 1 can be cleaned, so
The gallium nitride wafer piece 1 is fixed on grinding plate 3 using the mode of vacuum suction afterwards, gallium face is towards grinding head 2.
The mode of the cleaning is not limited, if can by pollutant removals such as the dusts on the gallium nitride wafer piece 1,
It can for example be cleaned, then be dried up with nitrogen with deionized water.
The vacuum suction mode is, using the absorption stomata (not illustrated) in absorption platform by vacuumizing to institute
State gallium nitride wafer 1 to be adsorbed, so as to realize that gallium nitride wafer piece 1 is fixed.More preferably, the absorption stomata is evenly distributed on
In the absorption platform, and wafer unit stress is not less than 5N/cm2It is advisable.It can be reduced by the way of vacuum suction
Clean link, it is to avoid the movement of the gallium nitride wafer piece 1 and the change for grinding basal plane.Certainly, except vacuum suction mode,
The gallium nitride wafer piece 1 can be fixed on the grinding plate 3 using other suitable modes.
Then step S2 is performed, as shown in Fig. 2 determining the grinding basal plane of the gallium nitride wafer piece 1, there will be certain mesh
Several grinding heads 2 is parallel with the grinding basal plane and is overlaid on the gallium face of the gallium nitride wafer piece 1, is acted in lapping liquid 5
It is lower that the gallium face is ground to the first roughness.
The surface crystal for the interior gallium nitride wafer piece grown for device and film of commercialization and industry that usual market is provided
Orientation is (0001) face, current embodiment require that facing (0101) face from (0001) deviates 0.1~0.4 degree, in this, as grinding base
Face (also referred to as processes plane), and thus obtained surface can preferably meet the making needs of back segment device.
The mode for obtaining the grinding basal plane is not limited, and it is described to obtain determination that the present embodiment is preferred to use XRD metering systems
Grind basal plane.Internal crystal structure is measured by the X-ray in XRD instruments, X-ray passes through the lattice diffraction of crystals
Afterwards, the specific region in space can be traveled to, angle is fixed, and the drift angle of actual value and theoretical value is grinding basal plane to be measured
With the drift angle of grinding plate.Therefore, before grinding technics progress, gallium nitride wafer piece is fixed on grinding plate, penetrated by X
The diffraction of line, can obtain the drift angle of grinding basal plane to be measured and grinding plate 3, grinding plate 3 is adjusted with this drift angle so that grinding
Basal plane is parallel with the abradant surface of grinding head 2 (vertical with the direct of travel of the grinding head 2).
Needed while being ground to lapped face plus lapping liquid 5, play wetting and cooling effect.The present embodiment
In, it is preferred to use deionized water can add a small amount of activating agent in deionized water in addition as lapping liquid and cooling agent, enhancing
Wetting function and grinding effect.Gallium nitride material has preferable tolerance to acid solution under normal temperature, but can be molten by alkalescence
Liquid is etched, and needs to consider this point when configuring lapping liquid.In process of lapping, the present embodiment is preferably only with deionized water.Its
Advantage is that deionized water is cheap, the heat produced by can effectively reducing in technique, as cooling agent, takes away grinding
Generate material；Itself also has very weak corrosive power, can serve as the effect of a part of lapping liquid.
Under the wetting and cooling effect of deionized water, gallium nitride wafer piece described in the high speed spin finishing of grinding head 2
1, and grinding plate 3 is then rotated in opposite directions, until the gallium face grinding of the gallium nitride wafer piece 1 is reached into first is coarse
Degree.
First roughness is with no more than 10 microns.Preferably, first roughness is no more than 5 microns.More preferably,
First roughness is no more than 3 microns.In the present embodiment, first roughness is 1 micron.
As shown in Fig. 2 during grinding, the grinding head 2 is needed all coverings, and described of gallium nitride wafer piece 1
The rotary speed of grinding head 2 needs the rotary speed higher than the grinding plate 3.
As an example, the mesh number of the grinding head 2 in this step is no more than 6000 mesh, the area of grinding head 2 exceedes crystalline substance
Disk area at least 25%, the rotating speed of grinding head 2 is not less than 800r/min, and the rotary speed of grinding plate 3 is not less than
100r/min, the grinding rate in the gallium face of gallium nitride wafer piece 1 is no more than 50 microns/min.
More preferably, the mesh number of grinding head 2 is no more than 5000 mesh, and the area of grinding head 2 exceedes wafer area at least
30%, the rotating speed of grinding head 2 is not less than 850r/min, and the rotary speed of grinding plate 3 is not less than 120r/min, the nitrogen
The grinding rate for changing the gallium face of gallium wafer 1 is no more than 45 microns/min.
Optimally, the mesh number of grinding head 2 is no more than 4000 mesh, and the area of grinding head 2 exceedes wafer area at least
35%, the rotating speed of grinding head 2 is not less than 880r/min, and the rotary speed of grinding plate 3 is not less than 125r/min, the nitrogen
The grinding rate for changing the gallium face of gallium wafer 1 is no more than 40 microns/min.
Then, step S3 is performed, grinding head 2 is changed to more high mesh number, repeat step S2 until the gallium face is ground to
Second roughness.
Preferably, change after grinding head, XRD metering systems can be reused to correct the grinding basal plane, to prevent institute
State grinding basal plane change grinding head retrodeviate from.
The mesh number needs of the used grinding head 2 of this grinding are higher, can obtain more preferable surface roughness.As showing
Example, the mesh number of grinding head 2 is not less than 6000 mesh, and the area of grinding head 2 exceedes wafer area at least 25%, the grinding
First 2 rotating speed is not less than 600r/min, and the rotary speed of grinding plate 3 is not less than 100r/min, and the grinding plate 3 rotates speed
Degree is not higher than the rotary speed of grinding head 2, and the grinding thickness in the gallium face of gallium nitride wafer piece 1 is no more than 50 microns.
More preferably, the mesh number of grinding head 2 is not less than 7000 mesh, and the area of grinding head 2 exceedes wafer area at least
30%, the rotating speed of grinding head 2 is not less than 700r/min, and the rotary speed of grinding plate 3 is not less than 120r/min, described to grind
Polish the rotary speed of platform 3 and be not higher than the rotary speed of grinding head 2, the grinding thickness in the gallium face of gallium nitride wafer piece 1 is no more than 45
Micron.
Optimally, the mesh number of grinding head 2 is not less than 8000 mesh, and the area of grinding head 2 exceedes wafer area at least
35%, the rotating speed of grinding head 2 is not less than 800r/min, and the rotary speed of grinding plate 3 is not less than 150r/min, described to grind
Polish the rotary speed of platform 3 and be not higher than the rotary speed of grinding head 2, the grinding thickness in the gallium face of gallium nitride wafer piece 1 is no more than 40
Micron.
Ground by second, it is even lower that the roughness (the second roughness) in the gallium face can reach 5nm.Carry out the
After secondary grinding, the gallium nitride wafer piece 1 is cleaned, the abrasive material bits on the gallium nitride wafer piece 1 are removed.
Step S4 is finally performed, the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, by the nitridation
The gallium mirror polish of gallium wafer is to the surface roughness for meeting technological requirement.
Specifically, the basic composition of chemical-mechanical polisher is illustrated in figure 3, mainly includes rubbing head 2, polishing block 3
With the polishing pad 4 on polishing block 3.Wherein, gallium nitride 1 is fixed on the rubbing head 2, by the gallium of gallium nitride 1
Face is arranged on lower section, and nitrogen face is connected with the rubbing head 2.Polishing fluid 5 is sprayed on polishing pad 4, rubbing head 2 provide it is certain under
Pressure, makes the gallium face of gallium nitride 1 directly bear against on polishing fluid 5 and polishing pad 4, then opposite by rubbing head 2 and polishing block 3
The rotation in direction and the pH value of regulation polishing fluid 5 realize the polishing to the gallium nitride 1 after grinding.
As an example, when being chemically-mechanicapolish polished, using silica containing polishing fluid 5, wherein the silica
Proportion is no more than the polishing fluid 50%, and the particle mean size of the silica is no more than 100nm；The polishing fluid 5
PH value is controlled between 4 to 12；The pressure of gallium nitride wafer piece 1 is no more than 300g/cm2。
More preferably, the silica proportion is no more than the polishing fluid 40%, the average chi of particle of the silica
It is very little to be no more than 90nm；The pressure of gallium nitride wafer piece 1 is no more than 250g/cm2。
In the present embodiment, the silica proportion is the 30% of the polishing fluid, and the particle of the silica is averaged
Size is 90nm；The polishing fluid 5 is alkalescence, and pH value is 10.5；The pressure of gallium nitride wafer piece 1 is no more than 200g/
cm2。
In another embodiment, acid silicon dioxide polishing fluid can be also used, the corruption to gallium nitride wafer piece surface is reduced
Erosion, pH value is controlled 4.5 to 5, and wafer pressure is in 220g/cm2To 350g/cm2, other specification is consistent with the present embodiment.By
When using acid polishing slurry, gallium nitride wafer piece surface is corroded speed reduction, therefore the polish pressure used is higher than
The polish pressure used during using alkalescence polishing liquid.
By chemically mechanical polishing, the surface roughness in the gallium face can be further reduced to below 1nm, reach institute
The technique for stating gallium nitride wafer piece makes requirement.
, can be fast and effeciently thick by gallium nitride wafer piece surface above by grinding and CMP process is combined
Rugosity processing reaches the rank for meeting technological requirement, and processing step is simple, is realized using corase grind mode, reduces disappearing for material
Consumption, shortens the process time, reduces breakage rate.
, can also be to the nitrogen face of the gallium nitride wafer piece after the gallium face handling process for carrying out the gallium nitride wafer piece
Processing is ground, grinding number of times is determined according to customer requirement, if requiring that roughness reaches Nano grade, needs to carry out
Grind, if requiring relatively low, then once ground twice.The nitrogen face is the surface relative with the gallium face.
The step of being ground to the nitrogen face can be carried out between the step S3 and S4, can also step S4 it
After carry out.
Specially：The gallium face is fixed on the grinding plate, nitrogen face is towards the grinding head.Adjust grinding plate
Vertical with grinding head direct of travel, now the grinding basal plane in nitrogen face is just determined, recycles the grinding head to grind the nitrogen face
To the surface roughness for meeting technological requirement.After the completion of gallium face and nitrogen the face processing, the overall thickness of gallium nitride wafer piece is equal
It is even.
Compared to the gallium face, because material is different, the grinding in the nitrogen face can be more prone to, therefore, the nitrogen face is ground
The mesh number of grinding head required for mill is lower, and grinding pressure is also smaller, also without being polished technique after grinding.Grinding is described
The grinding head mesh number in nitrogen face is not higher than the mesh number for the grinding head that grinding gallium face is used, pressure when grinding pressure is with grinding gallium face
It is consistent.
For example, the grinding head mesh number used during grinding gallium face is 4000 mesh and 8000 to 30000 mesh, and when grinding nitrogen face
The grinding head mesh number used is 2000 to 4000 mesh and 6000 to 20000 mesh, and the spent time is longer than grinding gallium face, and grinding is thick
Degree is fewer than grinding gallium face, and final surface roughness is slightly below the surface roughness in gallium face after grinding.
In summary, the present invention provides a kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece, and methods described is extremely
The step of including handling the gallium face of the gallium nitride wafer piece less：The gallium nitride wafer piece is fixed on grinding first
On platform, gallium is face-up；It is then determined that the grinding basal plane of the gallium nitride wafer piece, by the grinding head with certain mesh number and institute
State grinding basal plane parallel and be overlaid on the gallium face of the gallium nitride wafer piece, be ground to the gallium face under lapping liquid effect
First roughness；Then grinding head is changed to more high mesh number, repeat step 2) until the gallium face is ground into the second roughness；
Finally the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, by the gallium mirror polish of the gallium nitride wafer piece extremely
Meet the surface roughness of technological requirement.By way of method the present invention is direct corase grind, processing step is simplified, thing is reduced
Material consumption, shortens the process time, reduces breakage rate.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. the method for a kind of grinding-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that methods described at least includes to institute
The step of gallium face for stating gallium nitride wafer piece is handled, including：
1) the gallium nitride wafer piece is fixed on grinding plate, the gallium face is towards grinding head；
2) the grinding basal plane of the gallium nitride wafer piece is determined using XRD measuring methods, by the grinding head with certain mesh number with
The grinding basal plane is parallel and is overlaid on the gallium face of the gallium nitride wafer piece, grinds the gallium face under lapping liquid effect
To the first roughness；
3) grinding head is changed to more high mesh number, repeat step 2) until the gallium face is ground into the second roughness, described second
Roughness is less than first roughness；
4) the gallium nitride wafer piece is fixed on chemically mechanical polishing platform, by the gallium mirror polish of the gallium nitride wafer piece
To the surface roughness for meeting technological requirement.
2. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：It is described
Step 1) include：The gallium nitride wafer piece is cleaned first, then using the mode of vacuum suction by the gallium nitride wafer piece
It is fixed on grinding plate, the gallium face is towards grinding head.
3. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：It is described
Step 2) in, the grinding basal plane of the gallium nitride wafer piece is determined using XRD measuring methods, then by adjusting the grinding
Platform makes the grinding head parallel with the grinding basal plane, and is gone using deionized water as lapping liquid and cooling agent described
In the presence of ionized water, the grinding head is rotated at a high speed with the direction opposite with the grinding plate, so that the gallium face be ground
It is milled to the first roughness.
4. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：It is described
Step 2) in the first roughness be no more than 10 microns.
5. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：It is described
Step 2) in, the grinding head mesh number is no more than 6000 mesh, and the grinding head area exceedes wafer area at least 25%, described
Grinding head rotating speed is not less than 800r/min, and the grinding plate rotary speed is not less than 100r/min, the grinding plate rotation
Speed is not higher than grinding head rotary speed, and the grinding rate in the gallium nitride wafer piece gallium face is no more than 50 microns/min.
6. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：It is described
Step 3) in the second roughness be no more than 5nm.
7. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：It is described
Step 3) in, the grinding head mesh number is not less than 6000 mesh, and the grinding head area exceedes wafer area at least 25%, described
Grinding head rotating speed is not less than 600r/min, and the grinding plate rotary speed is not less than 100r/min, the grinding plate rotation
Speed is not higher than grinding head rotary speed, and the grinding thickness in the gallium nitride wafer piece gallium face is no more than 50 microns.
8. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：It is described
Step 4) in when being chemically-mechanicapolish polished, using silica containing polishing fluid, wherein the silicon dioxide ratio is no more than again
The polishing fluid 50%, the particle mean size of the silica is no more than 100nm；The pH range of the polishing fluid is 4
To between 12；The gallium nitride wafer piece pressure is no more than 300g/cm2。
9. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：It is described
Step 4) in, the surface roughness is below 1nm.
10. the method for grinding according to claim 1-chemically mechanical polishing gallium nitride wafer piece, it is characterised in that：To institute
State gallium nitride wafer piece gallium face carry out the processing after, in addition to the nitrogen face of the gallium nitride wafer piece is ground
Step：
The gallium face of the gallium nitride wafer piece is fixed on the grinding plate, grinding head, the mesh number of the grinding head is changed
The grinding head mesh number used during the gallium face is not higher than ground, the nitrogen face adjusts the grinding plate towards the grinding head
It is vertical with the grinding head direct of travel；
The nitrogen face is ground to the surface roughness for meeting technological requirement using the grinding head.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710495696.3A CN107263301B (en) | 2017-06-26 | 2017-06-26 | A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710495696.3A CN107263301B (en) | 2017-06-26 | 2017-06-26 | A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107263301A true CN107263301A (en) | 2017-10-20 |
| CN107263301B CN107263301B (en) | 2019-05-14 |
Family
ID=60069681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710495696.3A Active CN107263301B (en) | 2017-06-26 | 2017-06-26 | A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107263301B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109807693A (en) * | 2017-11-22 | 2019-05-28 | 株式会社迪思科 | The forming method of SiC boule |
| CN112757150A (en) * | 2020-12-29 | 2021-05-07 | 南京航空航天大学 | Rapid polishing method of gallium nitride single crystal material for electronic device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1814149A4 (en) * | 2005-01-12 | 2009-04-29 | Sumitomo Electric Industries | METHOD FOR ABRASING GaN SUBSTRATE |
| CN101673668A (en) * | 2009-10-19 | 2010-03-17 | 中国电子科技集团公司第四十六研究所 | Method for polishing gallium nitride crystals |
| CN102403434A (en) * | 2011-11-23 | 2012-04-04 | 杭州士兰明芯科技有限公司 | Method for manufacturing vertical LED chip |
| CN202572118U (en) * | 2012-04-24 | 2012-12-05 | 正恩科技有限公司 | Thinning structure for light emitting diode wafer |
| CN104810270A (en) * | 2014-01-28 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Grinding method |
-
2017
- 2017-06-26 CN CN201710495696.3A patent/CN107263301B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1814149A4 (en) * | 2005-01-12 | 2009-04-29 | Sumitomo Electric Industries | METHOD FOR ABRASING GaN SUBSTRATE |
| CN101673668A (en) * | 2009-10-19 | 2010-03-17 | 中国电子科技集团公司第四十六研究所 | Method for polishing gallium nitride crystals |
| CN102403434A (en) * | 2011-11-23 | 2012-04-04 | 杭州士兰明芯科技有限公司 | Method for manufacturing vertical LED chip |
| CN202572118U (en) * | 2012-04-24 | 2012-12-05 | 正恩科技有限公司 | Thinning structure for light emitting diode wafer |
| CN104810270A (en) * | 2014-01-28 | 2015-07-29 | 中芯国际集成电路制造(上海)有限公司 | Grinding method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109807693A (en) * | 2017-11-22 | 2019-05-28 | 株式会社迪思科 | The forming method of SiC boule |
| CN112757150A (en) * | 2020-12-29 | 2021-05-07 | 南京航空航天大学 | Rapid polishing method of gallium nitride single crystal material for electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107263301B (en) | 2019-05-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7815489B2 (en) | Method for the simultaneous double-side grinding of a plurality of semiconductor wafers | |
| WO2018198997A1 (en) | Substrate polishing device | |
| JP3645528B2 (en) | Polishing method and semiconductor device manufacturing method | |
| CN105340066B (en) | The manufacture method of SiC substrate | |
| US6962521B2 (en) | Edge polished wafer, polishing cloth for edge polishing, and apparatus and method for edge polishing | |
| US20100285723A1 (en) | Polishing apparatus | |
| TW200529312A (en) | CMP apparatus and process sequence | |
| US20130130595A1 (en) | Polishing agent and polishing method | |
| JP2000049122A (en) | Manufacture of semiconductor device | |
| KR20100138736A (en) | Method of the double sided polishing of a semiconductor wafer | |
| TWI659093B (en) | Honing processing method of GaN single crystal material | |
| KR102618420B1 (en) | Apparatus and method for planarizing substrate | |
| CN107263301B (en) | A kind of method of grinding-chemically mechanical polishing gallium nitride wafer piece | |
| CN107431006A (en) | The one chip one side Ginding process of semiconductor wafer and the one chip single-sided grinding device of semiconductor wafer | |
| CN114523340B (en) | Complete grinding and polishing equipment and grinding and polishing method | |
| US20150303050A1 (en) | METHOD FOR PRODUCING SiC SUBSTRATE | |
| CN101456150B (en) | Chemical mechanical polishing method | |
| JP2021536140A (en) | Pad-Preparation for Pad-Pad Variation Polishing Method for Semiconductor Substrate (Cross Reference to Related Applications) This application is the priority of US Provisional Patent Application No. 62 / 729,134 filed September 10, 2018. Claim profit. The disclosures of such US provisional patent applications are incorporated herein by reference for all relevant and consistent purposes for all relevance and consistency. | |
| KR20010021351A (en) | Polishing method and apparatus | |
| CN107598777B (en) | Chemical mechanical polishing method and apparatus for semiconductor wafer | |
| JP5286381B2 (en) | Semiconductor wafer polishing method | |
| JP2002043256A (en) | Method and apparatus for planarizing semiconductor wafer | |
| CN110116340A (en) | A kind of polishing process of cadmium zinc telluride crystal wafer | |
| US20210394331A1 (en) | Semiconductor substrate polishing with polishing pad temperature control | |
| CN102339742A (en) | Method for pre-polishing polishing pad by adopting polysilicon CMP (Chemical Mechanical Polishing) process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |