CN209491637U - Grinding head and chemical mechanical polishing device - Google Patents
Grinding head and chemical mechanical polishing device Download PDFInfo
- Publication number
- CN209491637U CN209491637U CN201822072171.1U CN201822072171U CN209491637U CN 209491637 U CN209491637 U CN 209491637U CN 201822072171 U CN201822072171 U CN 201822072171U CN 209491637 U CN209491637 U CN 209491637U
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- China
- Prior art keywords
- wafer
- gas
- grinding head
- adsorbed film
- interface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000227 grinding Methods 0.000 title claims abstract description 80
- 239000000126 substance Substances 0.000 title claims abstract description 32
- 238000005498 polishing Methods 0.000 title claims abstract description 12
- 238000009434 installation Methods 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000007921 spray Substances 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims description 112
- 230000005540 biological transmission Effects 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 230000001105 regulatory effect Effects 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- 230000001276 controlling effect Effects 0.000 claims 1
- 238000013467 fragmentation Methods 0.000 abstract description 10
- 238000006062 fragmentation reaction Methods 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A kind of grinding head and chemical mechanical polishing device, wherein the grinding head includes: adsorbed film, the adsorbed film is for adsorbing wafer；External device (ED), the external device (ED) include body part and the annular side wall portion connecting with body part, and the adsorbed film is located at body part surface, and is surround by annular side wall portion；Blowning installation in sidewall portion, the blowning installation includes gas nozzle, the interface between wafer adsorbed on adsorbed film described in the gas nozzle face and adsorbed film, when chemical mechanical planarization process terminates, when grinding head needs for the wafer on adsorbed film to be unloaded on wafer control handler, the blowning installation sprays gas to the interface of adsorbed film and wafer by gas nozzle.The grinding head of the utility model can prevent the fragmentation of wafer.
Description
Technical field
The utility model relates to semiconductor manufacturing facility more particularly to a kind of grinding heads and chemical mechanical polishing device.
Background technique
In semiconductor fabrication process, chemical mechanical grinding (Chemical Mechanical Polishing, CMP) is
A very important procedure is sometimes referred to as chemically-mechanicapolish polished or is planarized.So-called chemical mechanical grinding, it is to use
It is chemical that excess stock is removed from semi-conductor silicon chip with mechanical integrated effect, and it is made to obtain the technical process of flat surfaces.
Chemical mechanical grinding is carried out by chemical-mechanical grinding device, and existing chemical-mechanical grinding device generally wraps
Include: grinding table, grinding pad, lapping liquid supply side and grinding head, wherein grinding pad is set on grinding table；Grinding head is for fixing
Wafer to be ground contacts the wafer to be ground with grinding pad；Lapping liquid supply side is for supplying lapping liquid (Slurry) extremely
Grinding pad surface.When being ground, lapping liquid flows to the surface of grinding pad with certain rate, and grinding head gives wafer to be ground
Apply certain pressure, so that the face to be ground of wafer to be ground and grinding pad generate Mechanical Contact, during the grinding process, grinding
Head, grinding table are rotated respectively with certain speed, and the film of crystal column surface to be ground is removed by mechanically and chemically acting on, thus
Achieve the purpose that flattening wafer surface to be ground.
Existing grinding head generally comprises ontology and the adsorbed film on ontology, the adsorbed film adsorb under negative pressure to
The wafer of grinding, at the end of chemical mechanical planarization process, grinding head needs for the wafer after grinding to be unloaded to wafer control dress
On handler, but there are the risks of wafer fragmentation for the process that wafer is unloaded from grinding head.
Utility model content
Technical problem to be solved in the utility model is how to prevent wafer from fragmentation occurs when unloading from grinding head.
To solve the above-mentioned problems, the utility model provides a kind of grinding head, comprising:
Adsorbed film, the adsorbed film is for adsorbing wafer；
External device (ED), the external device (ED) include body part and the annular side wall portion connecting with body part, the adsorbed film
It is surround positioned at body part surface, and by annular side wall portion；
Blowning installation in sidewall portion, the blowning installation include gas nozzle, described in the gas nozzle face
The interface between wafer adsorbed on adsorbed film and adsorbed film, when chemical mechanical planarization process terminates, grinding head needs to inhale
When wafer on membrane is unloaded on wafer control handler, the blowning installation passes through gas nozzle to adsorbed film and wafer
Interface spray gas.
Optionally, the blowning installation further includes gas transmission pipeline, and the gas transmission pipeline is for conveying gas, institute
The outlet for stating gas transmission pipeline is connect with gas nozzle.
Optionally, blowning installation further includes the control valve and flow rate regulating valve being set on gas transmission pipeline, the control
Valve processed is used to close and open the path of the gas in gas transmission pipeline, and the flow rate regulating valve is used for regulating gas delivery pipe
The flow velocity of gas in road.
Optionally, the gas transmission pipeline includes main line and the annulus line that is connected to main line, the ring pipe
Road is set in annular side wall portion, and several gas nozzles, several gas nozzles and adsorbed film and wafer are provided on annulus line
Interface be in same level height.
Optionally, several gas nozzles are evenly distributed on annulus line.
Optionally, the gas is pure nitrogen gas.
Optionally, the gas is the mixed gas of nitrogen and isopropanol.
Optionally, there is water, gas nozzle is to the boundary of adsorbed film and wafer on the interface of the adsorbed film and wafer
When gas is sprayed in face, the water on interface is removed.
Optionally, when the wafer on adsorbed film is unloaded on wafer control handler by grinding head, the adsorbed film stops
Only to the absorption of wafer.
The present invention also provides a kind of chemical mechanical polishing devices, including the grinding head as described in aforementioned.
Compared with prior art, technical solutions of the utility model have the advantage that
Grinding head of the invention is by setting blowning installation, and when chemical mechanical planarization process terminates, grinding head needs to inhale
When wafer on membrane is unloaded on wafer control handler, the blowning installation passes through gas nozzle to adsorbed film and wafer
Interface injection gas so that the water of the interface of adsorbed film and wafer is removed rapidly reduce surface tension, thus make
Obtaining grinding head only needs the pressure of very little that the wafer on adsorbed film can be made smoothly to fall on wafer control handler, thus
Prevent wafer from fragmentation occurs when unloading from grinding head.
Further, the gas transmission pipeline includes main line and the annulus line that is connected to main line, the ring pipe
Road is set in annular side wall portion, and several gas nozzles, several gas nozzles and adsorbed film and wafer are provided on annulus line
Interface be in same level height, thus the gas conveyed in main line is into the gas in people's annulus line, in annulus line
Body can go out spray from several gas nozzles, so that several gas nozzles can be from four circumferential adsorbed films and wafer interface
Upper injection gas removes water present on adsorbed film and wafer interface from multiple directions around, to improve boundary simultaneously
The removal rate and removal efficiency of water on face.
Chemical mechanical polishing device of the invention, due to including aforementioned grinding head, thus chemical mechanical planarization process terminates
When, when wafer is unloaded from grinding head, it can prevent wafer from fragmentation occurs.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model embodiment grinding head；
Fig. 2 is the enlarged diagram of part-structure in Fig. 1；
Fig. 3 is the structural schematic diagram of utility model one embodiment gas nozzle and gas transmission pipeline.
Specific embodiment
As described in the background art, usually there is the risk of wafer fragmentation when unloading wafer in existing grinding head.
The study found that after chemical mechanical milling tech, adsorbed film on grinding head and there is water on the contact surface of wafer
In the presence of the surface tension of water makes grinding head that additional impose severe pressure be needed just wafer to be made smoothly to fall on wafer control
On handler, this mode will increase the risk of wafer fragmentation.
For this purpose, the utility model provides a kind of grinding head and chemical mechanical polishing device, wherein the grinding head passes through
Blowning installation is set, and when chemical mechanical planarization process terminates, grinding head needs the wafer on adsorbed film being unloaded to wafer control
When on handler, the blowning installation sprays gas to the interface of adsorbed film and wafer by gas nozzle, so that absorption
The water of the interface of film and wafer is removed rapidly, and surface tension is reduced, so that grinding head only needs the pressure of very little
The wafer on adsorbed film can be made smoothly to fall on wafer control handler, thus when preventing wafer from unloading from grinding head
Fragmentation occurs.
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing to this
The specific embodiment of utility model is described in detail.When the utility model embodiment is described in detail, for purposes of illustration only, schematic diagram
General proportion can be disobeyed and make partial enlargement, and the schematic diagram is example, should not limit the guarantor of the utility model herein
Protect range.In addition, the three-dimensional space of length, width and depth should be included in actual fabrication.
Fig. 1 is the structural schematic diagram of the utility model embodiment grinding head；Fig. 2 is the amplification signal of part-structure in Fig. 2
Figure；Fig. 3 is the structural schematic diagram of utility model one embodiment gas nozzle and gas transmission pipeline.
With reference to Fig. 1 and Fig. 2, the grinding head 31, comprising:
Adsorbed film 201, the adsorbed film 201 is for adsorbing wafer 21；
External device (ED) 210, the external device (ED) 210 include body part 203 and the annular side wall portion connecting with body part 203
202, the adsorbed film 201 is located at 203 surface of body part, and is surround by annular side wall portion 202；
Blowning installation in sidewall portion 202, the blowning installation include gas nozzle 206, the gas nozzle 206
The interface between wafer 21 adsorbed on adsorbed film 201 and adsorbed film 201 described in face, when chemical mechanical planarization process knot
Beam, when grinding head needs for the wafer 21 on adsorbed film 201 to be unloaded on wafer control handler, the blowning installation passes through
Gas nozzle 206 sprays gas 209 to the interface of adsorbed film 201 and wafer 21.
Specifically, in one embodiment, wafer 21 is adsorbed onto the table of adsorbed film 201 by negative pressure by the adsorbed film 201
Face.The negative pressure is generated by vacuum generator and the negative-pressure pipeline connecting with vacuum generator, can in the adsorbed film 201
With with several negative-pressure pipelines, the body part 203 that negative-pressure pipeline passes through external device (ED) 210 is connect with vacuum generator.
The body part 203 of the external device (ED) 210 is used to support the portion gas conveying of adsorbed film 201 and blowning installation
Pipeline, the annular side wall portion 202 of the external device (ED) 21 are used to fix the portion gas conveyance conduit and gas of blowning installation
Nozzle 206.The body part 203 is also connected with driving portion 204, and the driving portion 204 is for driving the external device (ED) 210 to revolve
Turn, so that the wafer on adsorbed film 201 also rotates with, carries out chemical mechanical planarization process, it is in one embodiment, described
Driving portion 204 includes stepper motor, and the shaft of stepper motor is connect with body part.
202 top surface of annular side wall portion (surface far from body part 203) is higher than the surface of adsorbed film 201
(surface of absorption wafer 21), so that gas nozzle 206 is easy to set up on adsorbed film 201 described in face and adsorbed film 201
Interface between the wafer 21 of absorption.
The blowning installation further includes gas transmission pipeline 205, and the gas transmission pipeline 205 is for conveying gas 209
(referring to Fig. 2), the outlet of the gas transmission pipeline 205 is connect with gas nozzle 206.The gas transmission pipeline 205 passes through
The body part 203 and annular side wall portion 202 of external device (ED) 210, are set to adsorbed film 201 for the outlet of gas transmission pipeline 205
On the side wall of the aspectant annular side wall portion 202 in boundary between wafer 21, gas nozzle 206 and outlet are connected, and gas is defeated
The gas 209 in pipeline 205 is sent to spray by gas nozzle 206, the gas 209 of ejection can be by adsorbed film 201 and wafer 21
Water removal on interface, in favor of being unloaded on the slave grinding head of wafer.
In one embodiment, the gas 209 is pure nitrogen gas, and the gas is nitrogen and isopropanol in another embodiment
Mixed gas.
The blowning installation further includes the control valve 207 and flow rate regulating valve 208 being set on gas transmission pipeline 205,
The control valve 207 is used to close and open the path of the gas in gas transmission pipeline 205, i.e., when control valve 207 is opened, gas
Gas in body conveyance conduit 205 can be sprayed from gas nozzle 206, when control valve 207 is closed, in gas transmission pipeline 205
There is no gas flowing, there is no gas ejection in gas nozzle 206, the flow rate regulating valve 208 is used for regulating gas conveyance conduit
The flow velocity of gas in 205.The control valve 207 is to control it by electric signal to open and close control valve, and the flow velocity is adjusted
Valve 208 is the regulating valve that the flow velocity of its regulating gas is controlled by electric signal.It specifically can be from control unit to control valve 207
Electric signal is sent with flow rate regulating valve 208, unit, when receiving electric signal, is controlled to control valve 207 and flow rate regulating valve 208
The operation that valve 207 is opened and closed, flow rate regulating valve 208 carry out corresponding flow and adjust operation.
When carrying out chemical mechanical grinding, all there is water in lapping liquid and cleaning solution, terminate in chemical mechanical planarization process
When, the interface of the adsorbed film 201 and wafer can have water, and the tension that water generates will affect wafer and be unloaded to from grinding head
Wafer controls on handler.In the present embodiment, by the way that blowning installation, when chemical mechanical planarization process terminates, grinding head is arranged
When needing for the wafer 21 on adsorbed film 201 to be unloaded on wafer control handler, the blowning installation passes through gas nozzle
206 spray gas 209 to the interface of adsorbed film 201 and wafer 21, so that the water quilt of the interface of adsorbed film 201 and wafer 21
Removal rapidly, reduces surface tension, thus grinding head only needs the pressure of very little that the wafer 21 on adsorbed film 201 can be made suitable
Benefit is fallen on wafer control handler, to prevent wafer from fragmentation occurs when unloading from grinding head.
In the present embodiment, terminate in chemical mechanical planarization process, the wafer 21 on adsorbed film 201 is unloaded to crystalline substance by grinding head
When on circle control handler, the adsorbed film 201 stops the absorption to wafer 21.
In one embodiment, referring to FIG. 3, the gas transmission pipeline 205 include main line 212 and with main line 212
The annulus line 211 of connection, the annulus line 211 is set in annular side wall portion 202 (with reference to Fig. 1), on annulus line 211
It is provided with several gas nozzles 206, several gas nozzles 206 and adsorbed film 201 (referring to Fig. 1) and wafer 21 (referring to Fig. 1)
Interface is in same level height, thus the gas conveyed in main line 212 is into people's annulus line 206, annulus line 206
In gas can go out spray from several gas nozzles 206 so that several gas nozzles 206 can be from four circumferential adsorbed films
201 with spray gas on 21 interface of wafer, remove and deposited on adsorbed film 201 and 21 interface of wafer simultaneously from multiple directions around
Water, to improve the removal rate and removal efficiency of water on interface.
The circulating line 211 is located proximate to adsorbed film 201 (with reference to Fig. 1) and wafer 21 in annular side wall portion 202
The interface of (referring to Fig. 1), the circulating line 211 and the shape of annular side wall portion 202 are consistent, described in the present embodiment
Shape pipeline 211 and annular side wall portion 202 are in circular ring type.The main line 212 can partially be located in annular side wall portion 202,
Part is located in body part 203.
Several gas nozzles 206 are evenly distributed on annulus line 211, to further improve going for water on interface
Removal rates and removal efficiency.In the particular embodiment, several gas nozzles 206 are in angularly to be evenly distributed in annulus line
On 211.The quantity of the gas nozzle 206 be more than or equal to 2, such as can for 2,3,4,5,6,7,8,
9,10,8 gas nozzles 206 of equal angular distribution on the present embodiment annular tube road 211.
A kind of chemical mechanical polishing device is additionally provided in another embodiment of the present invention, including the aforementioned grinding head 31
(referring to Fig. 1).
Using chemical mechanical polishing device when being ground, due to all there is water in lapping liquid and cleaning solution, in chemistry
At the end of mechanical grinding process, the interface of the adsorbed film 201 and wafer 21 can have water, and water will affect the unloading of wafer,
The chemical mechanical polishing device of the present embodiment is due to including the aforementioned grinding head, by the way that dress of blowing is arranged on grinding head
It sets, when chemical mechanical planarization process terminates, grinding head needs for the wafer 21 on adsorbed film 201 to be unloaded to wafer control handling dress
When setting, the blowning installation sprays gas 209 to the interface of adsorbed film 201 and wafer 21 by gas nozzle 206, so that
Adsorbed film 201 and the water of the interface of wafer 21 are removed rapidly, reduce surface tension, grinding head is made only to need the pressure of very little
Power can be such that the wafer 21 on adsorbed film 201 smoothly falls on wafer control handler, prevent wafer from unloading from grinding head
Fragmentation occurs when load.
About the specific restriction and description of grinding head, repeats no more in the present embodiment, specifically please refer to previous embodiment
The restriction and description of middle corresponding portion.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (9)
1. a kind of grinding head characterized by comprising
Adsorbed film, the adsorbed film is for adsorbing wafer；
External device (ED), the external device (ED) include body part and the annular side wall portion connecting with body part, and the adsorbed film is located at
Body part surface, and surround by annular side wall portion；
Blowning installation in sidewall portion, the blowning installation include gas nozzle, are adsorbed described in the gas nozzle face
The interface between wafer adsorbed on film and adsorbed film, when chemical mechanical planarization process terminates, grinding head is needed adsorbed film
On wafer be unloaded to wafer control handler on when, the blowning installation pass through friendship of the gas nozzle to adsorbed film and wafer
Spray gas in interface.
2. grinding head as described in claim 1, which is characterized in that the blowning installation further includes gas transmission pipeline, described
For conveying gas, the outlet of the gas transmission pipeline is connect gas transmission pipeline with gas nozzle.
3. grinding head as claimed in claim 2, which is characterized in that blowning installation further includes being set on gas transmission pipeline
Control valve and flow rate regulating valve, the control valve are used to close and open the path of the gas in gas transmission pipeline, the stream
Flow velocity of the fast regulating valve for gas in regulating gas conveyance conduit.
4. grinding head as claimed in claim 2, which is characterized in that the gas transmission pipeline includes main line and and main line
The annulus line of connection, the annulus line are set in annular side wall portion, and several gas nozzles are provided on annulus line, if
The interface of dry gas nozzle and adsorbed film and wafer is in same level height.
5. grinding head as claimed in claim 4, which is characterized in that several gas nozzles are evenly distributed on annulus line.
6. grinding head as claimed in claim 2, which is characterized in that the gas is pure nitrogen gas.
7. grinding head as described in claim 1, which is characterized in that have water, gas on the interface of the adsorbed film and wafer
When body nozzle sprays gas to the interface of adsorbed film and wafer, the water on interface is removed.
8. grinding head as claimed in claim 1 or 7, which is characterized in that the wafer on adsorbed film is unloaded to wafer by grinding head
When controlling on handler, the adsorbed film stops the absorption to wafer.
9. a kind of chemical mechanical polishing device, which is characterized in that including grinding head as described in any one of claims 1 to 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822072171.1U CN209491637U (en) | 2018-12-11 | 2018-12-11 | Grinding head and chemical mechanical polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822072171.1U CN209491637U (en) | 2018-12-11 | 2018-12-11 | Grinding head and chemical mechanical polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209491637U true CN209491637U (en) | 2019-10-15 |
Family
ID=68152787
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822072171.1U Expired - Fee Related CN209491637U (en) | 2018-12-11 | 2018-12-11 | Grinding head and chemical mechanical polishing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209491637U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110682204A (en) * | 2019-11-20 | 2020-01-14 | 上海超硅半导体有限公司 | Unloading device and chemical mechanical polishing auxiliary equipment |
| CN113427393A (en) * | 2021-07-23 | 2021-09-24 | 长江存储科技有限责任公司 | Sucker device and chemical mechanical polishing equipment |
| CN114515995A (en) * | 2022-03-21 | 2022-05-20 | 上海江丰平芯电子科技有限公司 | Wafer polishing head and wafer adsorption method |
| CN117681064A (en) * | 2024-02-04 | 2024-03-12 | 合肥先端晶体科技有限责任公司 | Diamond rapid polishing method and device based on ultraviolet light |
-
2018
- 2018-12-11 CN CN201822072171.1U patent/CN209491637U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110682204A (en) * | 2019-11-20 | 2020-01-14 | 上海超硅半导体有限公司 | Unloading device and chemical mechanical polishing auxiliary equipment |
| CN110682204B (en) * | 2019-11-20 | 2024-05-17 | 上海超硅半导体股份有限公司 | Unloading device and chemical mechanical polishing auxiliary equipment |
| CN113427393A (en) * | 2021-07-23 | 2021-09-24 | 长江存储科技有限责任公司 | Sucker device and chemical mechanical polishing equipment |
| CN113427393B (en) * | 2021-07-23 | 2022-06-03 | 长江存储科技有限责任公司 | Sucker device and chemical mechanical polishing equipment |
| CN114515995A (en) * | 2022-03-21 | 2022-05-20 | 上海江丰平芯电子科技有限公司 | Wafer polishing head and wafer adsorption method |
| CN117681064A (en) * | 2024-02-04 | 2024-03-12 | 合肥先端晶体科技有限责任公司 | Diamond rapid polishing method and device based on ultraviolet light |
| CN117681064B (en) * | 2024-02-04 | 2024-04-30 | 合肥先端晶体科技有限责任公司 | Diamond rapid polishing method and device based on ultraviolet light |
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| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191015 |