CN110323321A - A kind of LED lamp bead and LED lamp - Google Patents
A kind of LED lamp bead and LED lamp Download PDFInfo
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- CN110323321A CN110323321A CN201910576261.0A CN201910576261A CN110323321A CN 110323321 A CN110323321 A CN 110323321A CN 201910576261 A CN201910576261 A CN 201910576261A CN 110323321 A CN110323321 A CN 110323321A
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- encapsulation glue
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Computer Hardware Design (AREA)
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- Led Device Packages (AREA)
Abstract
The present invention provides a kind of LED lamp bead and the LED lamp with the LED lamp bead, LED lamp bead includes package support, LED chip, the first encapsulation glue-line, the second encapsulation glue-line and third encapsulation glue-line, the LED chip sealing is on package support, the first encapsulation glue-line is covered on package support and covers light output surface and the side of the LED chip, and the first encapsulation glue-line is silica-silica gel composite layer；The second encapsulation glue-line is covered on the first encapsulation film surface, and the second encapsulation glue-line includes understructure and superstructure, and the understructure is fluorescent adhesive layer, and the superstructure is transparent silicon glue-line；The third encapsulation glue-line is covered on the second encapsulation film surface, and the third encapsulation glue-line is fluorescent adhesive layer.The LED lamp bead provided by this programme, whole light-out effect and amount of light can be promoted preferably.
Description
Technical field
The present invention relates to lighting areas, and in particular to a kind of LED lamp bead and the LED lamp with the LED lamp bead.
Background technique
Light emitting diode is referred to as LED, refers to made of the compound containing gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N) etc.
Electric energy can be converted into the semiconductor diode of luminous energy.In the utilization of this block of lighting area, need first to be packaged into LED chip
Then LED package again uses LED package into different lamps finished product.LED calorific value is not overcome in the prior art greatly
A great problem.
In LED lamp bead, package support, sealing are generally comprised in LED chip and covering LED chip on package support
Fluorescent glue, because LED chip is isolated sealing, so the mode of LED chip heat transmitting outward is mainly heat transfer and heat radiation,
Conventional LED lamp bead is after evenly mixing packaged lamp bead with glue using the form of even spread, i.e. fluorescent powder, at this time
Fluorescent powder be inside lamp bead it is equally distributed, it is glimmering under the heat radiation effect of heat source (chip), the conduction of heat of colloid
Light powder extreme temperatures, some are up to 150 DEG C.Fluorescent powder is with the raising of lamp bead temperature, and launching efficiency reduces, so that whole lamp is in warm
Brightness declines when stablizing.
Summary of the invention
For this purpose, the present invention provides a kind of LED lamp bead and the LED lamp with the LED lamp bead, can be effectively improved above-mentioned
Problem.
To achieve the above object, technical solution provided by the invention is as follows:
A kind of LED lamp bead, including package support, LED chip, the first encapsulation glue-line, the second encapsulation glue-line and third encapsulation
Glue-line, on package support, the first encapsulation glue-line is covered on package support and described in covering the LED chip sealing
The light output surface of LED chip and side, the first encapsulation glue-line is silica-silica gel composite layer；Second packaging plastic
Layer is covered on the first encapsulation film surface, and the second encapsulation glue-line includes understructure and superstructure, the understructure
For fluorescent adhesive layer, the superstructure is transparent silicon glue-line；The third encapsulation glue-line is covered on the second encapsulation film surface, institute
Stating third encapsulation glue-line is fluorescent adhesive layer.
Further, the partial size of the silica-silica gel composite layer silica dioxide granule is 8-10 μm.
Further, the mixed proportion of the silica-silica gel composite layer silica dioxide granule and silica gel is 1.5:
100。
Further, the surface of the first encapsulation glue-line is higher by the light output surface 0.05-0.1mm of LED chip.
Further, the package support is the package support with bowl or box dam, the LED chip, the first encapsulation
Glue-line, the second encapsulation glue-line and third encapsulation glue-line are all set in bowl or box dam.
Further, the understructure of the second encapsulation glue-line and the layered structure of superstructure are led to by fluorescent adhesive layer
Crossing centrifugation obtains fluorescent powder precipitating.
A kind of LED lamp, including at least LED lamp bead described above.
The technical solution provided through the invention, has the following beneficial effects:
Silica-silica gel composite layer of first encapsulation glue-line is compared to common silica gel packaging glue, and the capacity of heat transmission is strong, energy
Enough heats that LED chip is issued more in time, faster conduction to package support, reduce conduction to second and encapsulate glue-line or the
The heat of fluorescent adhesive layer in three encapsulation glue-lines；The understructure of second encapsulation glue-line is fluorescent adhesive layer, forms a kind of reduction LED
The barrier (can absorb the light of LED chip sending and be converted) of the heat radiation of chip, can effectively prevent LED chip
Heat radiation is applied to the fluorescent powder of third encapsulation glue-line；The superstructure of second encapsulation glue-line is transparent silicon glue-line, the capacity of heat transmission
It is poor, the transparent glue channel an of low-thermal conductivity is provided, conduction of heat is reduced, slows down and passed by way of heat transfer
It is directed at the heat of third encapsulation glue-line, can be effectively reduced the temperature of third encapsulation glue-line, third encapsulation glue-line is arranged to fluorescence
Glue, the light that on the one hand can guarantee that LED chip issues sufficiently are excited, and guarantee the launching efficiency and amount of light of fluorescent powder, separately
On the one hand, can come under the premise of the light efficiency of the fluorescent glue of the second encapsulation glue-line, then by adjusting the fluorescent glue of third encapsulation glue-line
Adjustment improves whole light efficiency.
Silica-silica gel composite layer of first encapsulation glue-line is under the action of silica dioxide granule, additionally it is possible to realize light
Uniform diffusion, make it is whole go out light distribution it is more preferable.
All fluorescent powders (fluorescent adhesive layer in the second encapsulation glue-line and third encapsulation glue-line) mention above LED chip
The utilization rate of high fluorescent powder.
The LED lamp bead provided by this programme, whole light-out effect and amount of light can be promoted preferably.
Detailed description of the invention
Fig. 1 show LED lamp bead structural schematic diagram in embodiment；
Fig. 2 show the encapsulation schematic diagram one of LED lamp bead in embodiment；
Fig. 3 show the encapsulation schematic diagram two of LED lamp bead in embodiment；
Fig. 4 show the encapsulation schematic diagram three of LED lamp bead in embodiment.
Specific embodiment
To further illustrate that each embodiment, the present invention are provided with attached drawing.These attached drawings are that the invention discloses one of content
Point, mainly to illustrate embodiment, and the associated description of specification can be cooperated to explain the operation principles of embodiment.Cooperation ginseng
These contents are examined, those of ordinary skill in the art will be understood that other possible embodiments and advantages of the present invention.In figure
Component be not necessarily to scale, and similar component symbol is conventionally used to indicate similar component.
Now in conjunction with the drawings and specific embodiments, the present invention is further described.
Shown in referring to Fig.1, a kind of LED lamp bead provided in this embodiment, including package support, LED chip, the first packaging plastic
Layer, the second encapsulation glue-line and third encapsulate glue-line, and on package support, the first encapsulation glue-line pastes the LED chip sealing
It is overlying on package support and covers light output surface and the side of the LED chip, the first encapsulation glue-line is silica-silicon
Glue composite layer；The second encapsulation glue-line is covered on the first encapsulation film surface, and the second encapsulation glue-line includes understructure
And superstructure, the understructure are fluorescent adhesive layer, the superstructure is transparent silicon glue-line；The third encapsulation glue-line patch
It is overlying on the second encapsulation film surface, the third encapsulation glue-line is fluorescent adhesive layer.
For silica-silica gel composite layer of first encapsulation glue-line 30 compared to common silica gel packaging glue, the capacity of heat transmission is strong,
The heat that LED chip 20 can be issued more in time, is faster conducted to package support 10, reduces conduction to the second packaging plastic
The heat of layer 40 or the fluorescent adhesive layer in third encapsulation glue-line 50；The understructure 41 of second encapsulation glue-line 40 is fluorescent adhesive layer,
The barrier (can absorb the light of LED chip sending and be converted) for forming a kind of heat radiation for reducing LED chip 20, can
The heat radiation of LED chip 20 is effectively prevented to be applied to the fluorescent powder of third encapsulation glue-line 50；The upper layer knot of second encapsulation glue-line 40
Structure 42 is transparent silicon glue-line, and the capacity of heat transmission is poor, provides the transparent glue channel an of low-thermal conductivity, reduces heat transfer and makees
With, slow down conducted by way of heat transfer to third encapsulation glue-line 50 heat, can be effectively reduced third encapsulation glue-line
50 temperature, third encapsulation glue-line 50 are arranged to fluorescent glue, and the light that on the one hand can guarantee that LED chip 20 issues sufficiently is swashed
Hair, guarantees the launching efficiency and amount of light of fluorescent powder, on the other hand, can be in the light efficiency premise of the fluorescent glue of the second encapsulation glue-line 40
Under, then by adjusting third encapsulation glue-line 50 fluorescent glue come adjust or improves entirety light efficiency.
Fluorescent adhesive layer in the fluorescent adhesive layer and third encapsulation glue-line 50 of second encapsulation glue-line 40 can play excitation and turn
The effect of change, meanwhile, the fluorescent adhesive layer of the second encapsulation glue-line 40 also primarily serves the effect of barrier heat radiation, and third encapsulates glue-line
Fluorescent adhesive layer in 50 also primarily serves the effect of adjusting and optimizing.
Meanwhile first encapsulates silica-silica gel composite layer of glue-line 30 under the action of silica dioxide granule, additionally it is possible to
The uniform diffusion for realizing light keeps whole light distribution out more preferable.
All fluorescent powders (fluorescent adhesive layer in the second encapsulation glue-line 40 and third encapsulation glue-line 50) are in LED chip 20
Side, improves the utilization rate of fluorescent powder.
By the LED lamp bead of this programme, whole light-out effect and amount of light can be promoted preferably.
Specifically, the LED chip 20 is blue-light LED chip in the present embodiment, pass through fluorescent glue (the second encapsulation glue-line
40 and third encapsulation glue-line 50 in fluorescent adhesive layer) effect form white light.Of course, in other embodiments, can also adopt
With other LED chips and fluorescent glue.
Specifically, package support 10 is the package support conventionally used for packaging LED chips 20 in the present embodiment, to guarantee
Thermal conductivity, in the present embodiment, the preferably package support of the metal material of good heat conduction effect；Certainly, in other embodiments not
It is limited to this, it can also be using ceramic material, glass material, plastic material such as PPA (polyphthalamide) material, (poly- pair of PCT
Cyclohexanedimethanol supports dimethylene ester resin) package support etc. of material or EMC (Electro Magnetic Compatibility) material.LED chip 20
For sealing on package support 10, mode is LED chip 20 by die bonds such as elargol or tin creams on package support 10, then is passed through
Bonding line is electrically connected with the electrode of package support 10；It or is to keep the electrode of LED chip 20 straight directly by way of upside-down mounting
It connects and is electrically connected with the electrode of package support 10；Above-mentioned is routine techniques, is no longer described in detail one by one herein.
Specifically, silica-silica gel composite layer 30 is that silica dioxide granule and silica gel are mixed in a certain ratio.Institute
State the micron silica particle that the partial size of silica-silica gel composite layer 30 silica dioxide granule is 8-10 μm, particle
Partial size is small, is uniformly mixed, and light diffusing is good.Of course, in other embodiments, the two of other particle sizes can also be used
Silicon oxide particle, such as 10 μm or more of micron silica particle, or be nanoscale silica dioxide granule etc..
Further, the silica-silica dioxide granule of silica gel composite layer 30 and the mixed proportion of silica gel are
1.5:100, the ratio are weight ratio, silica-silica gel composite layer 30 coefficient of expansion can be reduced, to reduce para-linkage line
Stress, improve service life.
Further, in the present embodiment, the surface of the first encapsulation glue-line 30 is higher by the light output surface of LED chip 20
0.05-0.1mm.The surface distance first of LED chip 20 encapsulates 30 surface of glue-line also close to 20 thickness half of LED chip at this time
Space, extend the distance of heat transfer, reduce upward heat transfer heat.
Further, in the present embodiment, the package support 10 is the package support with bowl or box dam, the LED
Chip 20, first encapsulates the encapsulation glue-line 40 of glue-line 30, second and third encapsulation glue-line 50 is all set in bowl or box dam.Molding
It is good, it is not easy to collapse.It preferably connects, leads with the package support 10 of bowl 11, bowl 11 and the substrate of package support 10
It is hot good, it realizes preferably thermally conductive.
Further, in the present embodiment, the understructure of the second encapsulation glue-line and the layered structure of superstructure are
Fluorescent powder precipitating is obtained by centrifugation by fluorescent adhesive layer.
Fluorescent powder is made to be precipitated to the fluorescent adhesive layer that understructure 41 is formed on bottom by the way of centrifugation, so that lower layer ties
The fluorescent powder of the fluorescent adhesive layer of structure 41 is close, forms a kind of barrier of heat radiation for reducing blue light, more effectively prevents blue light
Heat radiation is applied to the fluorescent powder of third encapsulation glue-line 50, reduces the temperature of the fluorescent powder of third encapsulation glue-line 50.
Meanwhile when the second encapsulation glue-line 40 carries out centrifugation fluorescent powder, silica-silicon of the first encapsulation glue-line 30
The silica dioxide granule of glue composite layer can also play support and barrier effect, and the fluorescent powder of the second encapsulation glue-line 40 is prevented to be centrifuged
It penetrates into the first encapsulation glue-line 30, in this way, preparation step can be simplified it is not necessary that the first encapsulation glue-line 30 is carried out baking-curing in advance
Suddenly, it improves efficiency.
Of course, in other embodiments, can also obtain using other modes, the fluorescence of understructure is such as pasted respectively
The transparent silicon glue-line of glue-line and superstructure.
Shown in referring to Figure 2 to Figure 4, the present embodiment provides LED lamp bead, preparation method includes the following steps:
A1 provides package support 10, and by 20 sealing of LED chip on package support 10, structure is as shown in Figure 2；
A2, pastes the first encapsulation glue-line 30, and the first encapsulation glue-line 30 is covered on package support 10 and described in covering
The light output surface of LED chip 20 and side, the first encapsulation glue-line 30 is silica-silica gel composite layer, structure such as Fig. 3
It is shown；
A3 pastes the second encapsulation glue-line 40 on the first encapsulation 30 surface of glue-line, and the second encapsulation glue-line 40 includes lower layer
Structure 41 and superstructure 42, the understructure 41 are fluorescent adhesive layer, and the superstructure 42 is transparent silicon glue-line, structure
As shown in Figure 4；
A4 pastes third encapsulation glue-line 50, the third encapsulation on the surface of the superstructure 42 of the second encapsulation glue-line 40
Glue-line 50 is fluorescent adhesive layer, and structure is as shown in Figure 1, complete the preparation of LED lamp bead.
It is illustrated as follows with experimental data:
The fluorescent powder of two parts of equivalent and identical proportion is taken, portion is used for the encapsulation of routine LED, i.e., is directly carried out with fluorescent glue
It is packaged into LED lamp bead 1；Another is used for the LED lamp bead 2 of this programme preparation.In LED lamp bead 1 and LED lamp bead 2, in addition to structure sheaf
Difference, such as package support, LED chip are identical for other.
Above-mentioned LED lamp bead 1 and LED lamp bead 2 are carried out to the cold conditions data and hot data of test section, cold conditions data refer to
Lamp bead temperature is not increased to testing photoelectronic parameter when thermostabilization also, and hot data refer to the test after lamp bead reaches thermostabilization
Data, specifically, hot temperature is 105 DEG C.
Wherein, table 1 is the cold conditions data of LED lamp bead 1；Table 2 is the hot data of LED lamp bead 1；Table 3 is LED lamp bead 2
Cold conditions data；Table 4 is the hot data of LED lamp bead 2.
The cold conditions data of 1 LED lamp bead 1 of table
| Serial number | Luminous flux lm | Colour rendering index Ra | Colour temperature CCT |
| 1 | 120.1 | 83.3 | 2901 |
| 2 | 119.4 | 83.1 | 2911 |
| 3 | 121.2 | 83.5 | 2920 |
| 5 | 122.2 | 82.9 | 2911 |
| 6 | 120.4 | 83.2 | 2914 |
| 7 | 118.3 | 83 | 2890 |
| 8 | 119.5 | 83.2 | 2897 |
| Average value | 120.16 | 83.17 | 2906 |
The hot data of 2 LED lamp bead 1 of table
| Serial number | Luminous flux lm | Colour rendering index Ra | Colour temperature CCT |
| 1 | 94.99 | 84 | 3133 |
| 2 | 94.92 | 84.2 | 3143 |
| 3 | 96.48 | 84.3 | 3153 |
| 5 | 96.92 | 84.1 | 3143 |
| 6 | 95.41 | 83.9 | 3147 |
| 7 | 93.59 | 84.3 | 3121 |
| 8 | 94.88 | 84.1 | 3128 |
| Average value | 95.31 | 84.13 | 3138 |
For 1 luminous flux of LED lamp bead: the ratio of hot data and cold conditions data are as follows: 95.31/120.16=79.32%.
The cold conditions data of 3 LED lamp bead 2 of table
| Serial number | Luminous flux lm | Colour rendering index Ra | Colour temperature CCT |
| 1 | 123.1 | 83 | 2896 |
| 2 | 120.4 | 8.1 | 2884 |
| 3 | 125.2 | 83.0 | 2924 |
| 5 | 124.2 | 82.7 | 2912 |
| 6 | 120.4 | 83.0 | 2904 |
| 7 | 122.3 | 83.1 | 2889 |
| 8 | 122.5 | 83.0 | 2900 |
| Average value | 122.59 | 82.99 | 2901 |
The hot data of 4 LED lamp bead 2 of table
| Serial number | Luminous flux lm | Colour rendering index Ra | Colour temperature CCT |
| 1 | 98.60 | 84.1 | 3127 |
| 2 | 96.48 | 84 | 3114 |
| 3 | 100.35 | 84.2 | 3157 |
| 5 | 99.61 | 83.8 | 3144 |
| 6 | 96.68 | 83.7 | 3136 |
| 7 | 98.09 | 84.2 | 3120 |
| 8 | 98.17 | 83.8 | 3132 |
| Average value | 98.28 | 83.97 | 3133 |
For 2 luminous flux of LED lamp bead: the ratio of hot data and cold conditions data are as follows: 98.28/122.59=80.17%.
Under identical fluorescent powder type, the same terms such as Chip scale, lamp bead (LED lamp bead 2) brightness ratio of the present invention is conventional
Height (the 122.59-120.16)/120.16=2.02% of (LED lamp bead 1).
Hot sustainment rate, the height (80.17-79.32) of lamp bead (LED lamp bead 2) brightness ratio of the present invention conventional (LED lamp bead 1)/
79.32=1.02%.
The present embodiment also provides a kind of LED lamp, including at least LED lamp bead described above.
Although specifically showing and describing the present invention in conjunction with preferred embodiment, those skilled in the art should be bright
It is white, it is not departing from the spirit and scope of the present invention defined by the appended claims, it in the form and details can be right
The present invention makes a variety of changes, and is protection scope of the present invention.
Claims (7)
1. a kind of LED lamp bead, which is characterized in that including package support, LED chip, first encapsulation glue-line, second encapsulation glue-line and
Third encapsulates glue-line, and on package support, the first encapsulation glue-line is covered on package support and covers the LED chip sealing
Light output surface and the side of the LED chip are covered, the first encapsulation glue-line is silica-silica gel composite layer；Described second
Encapsulation glue-line is covered on the first encapsulation film surface, and the second encapsulation glue-line includes understructure and superstructure, under described
Layer structure is fluorescent adhesive layer, and the superstructure is transparent silicon glue-line；The third encapsulation glue-line is covered on the second encapsulation glue-line
Surface, the third encapsulation glue-line is fluorescent adhesive layer.
2. LED lamp bead according to claim 1, it is characterised in that: the silica-silica gel composite layer silica
The partial size of particle is 8-10 μm.
3. LED lamp bead according to claim 1 or 2, it is characterised in that: the silica-silica gel composite layer dioxy
The mixed proportion of silicon carbide particle and silica gel is 1.5:100.
4. LED lamp bead according to claim 1, it is characterised in that: the surface of the first encapsulation glue-line is higher by LED chip
Light output surface 0.05-0.1mm.
5. LED lamp bead according to claim 1, it is characterised in that: the package support is the envelope with bowl or box dam
Bracket is filled, the LED chip, the first encapsulation glue-line, the second encapsulation glue-line and third encapsulation glue-line are all set in bowl or box dam
It is interior.
6. LED lamp bead according to claim 1, it is characterised in that: the understructure of the second encapsulation glue-line and upper layer
The layered structure of structure is to obtain fluorescent powder precipitating by centrifugation by fluorescent adhesive layer.
7. a kind of LED lamp, it is characterised in that: including at least any LED lamp bead of the claims 1 to 6.
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Application publication date: 20191011 |