CN110310984A - 等温共发射区横向SiGe异质结双极晶体管 - Google Patents
等温共发射区横向SiGe异质结双极晶体管 Download PDFInfo
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Abstract
本发明公开了一种等温共发射区横向SiGe异质结双极晶体管。所述晶体管仅具有一个Si发射区(24)以及多个数量相等的Si集电区(22)和SiGe基区(23)来构成多个子晶体管共用一个发射区的晶体管。各子晶体管的Si集电区(22)与SiGe基区(23)均以Si发射区(24)为对称中心呈中心对称分布，将有利于减小各子晶体管之间的热耦合，改善各子晶体管的散热能力，进而降低各子晶体管的热阻，实现所述晶体管等温分布的目的。与常规的横向SiGe异质结双极晶体管相比，在相同的环境温度、工作电压以及总集电极电流情况下，所述晶体管中各子晶体管的热阻更小，峰值结温更低，且所述晶体管的温度分布和电流分布更加均匀，从而有利于所述晶体管的热稳定工作。
Description
技术领域
本发明涉及横向硅锗(SiGe)异质结双极晶体管(HBT)，特别是应用于无线通信、雷达与电子对抗、军事装备以及医疗电子等微波功率器件领域的等温共发射区横向SiGeHBT。
背景技术
绝缘体上硅(SOI)SiGe HBT具有衬底寄生电容小、漏电流低、高频特性好等优点，特别是采用SOI技术的横向SiGe HBT，还具有工艺简单、且与现有的SOI CMOS工艺相兼容等优势，将在微波功率领域中扮演越来越重要的角色。
横向SiGe HBT通常采用多个子晶体管并联(即多个Si发射区、SiGe基区和Si集电区交替排列)结构来获得较大的电流处理能力。图1示例了具有四个子晶体管的常规横向SiGe HBT的俯视和剖面结构示意图，其中包括Si衬底(10)，SiO2埋氧层(11)，以及位于SiO2埋氧层(11)上方的Si集电区(12)、SiGe基区(13)、Si发射区(14)；所述SiO2埋氧层(11)位于Si衬底(10)正上方；所述Si集电区(12)和Si发射区(14)分列SiGe基区(13)的两侧，并且Si发射区(14)与Si集电区(12)沿器件横向方向交替排列；多晶硅层(15)位于所述SiGe基区(13)的正上方，且两侧由SiO2侧墙(16)包围；集电极电极(17)位于Si集电区(12)的正上方；基极电极(18)位于多晶硅层(15)的正上方；发射极电极(19)位于Si发射区(14)的正上方。
众所周知，SOI SiGe HBT工作时热量主要产生于集电结处，对于传统SOI SiGeHBT，热量将通过SiO2埋氧层经由Si衬底散出。然而，对于采用SOI技术的横向SiGe HBT，作为热源的集电结与作为散热通道的Si衬底呈垂直分布，不利于热量通过Si衬底散出。因此，横向SiGe HBT的热阻较大，结温较高。此外，由于横向SiGe HBT多个集电结之间存在热耦合作用，将造成器件的温度分布不均匀，进一步加剧了器件的热问题，造成器件性能退化。
可见，设计出一种结温更低、可有效改善器件整体温度分布的等温共发射区横向SiGe HBT具有重要的理论和实际意义。
发明内容
1、等温共发射区横向SiGe异质结双极晶体管，其特征在于：
包括Si衬底(20)，SiO2埋氧层(21)，以及位于SiO2埋氧层(21)上方的Si集电区(22)、SiGe基区(23)和Si发射区(24)；所述SiO2埋氧层(21)位于Si衬底(20)正上方，多晶硅层(25)位于所述SiGe基区(23)的正上方，并且两侧由SiO2侧墙(26)包围，集电极电极(27)位于Si集电区(22)的正上方；基极电极(28)位于多晶硅层(25)的正上方；发射极电极(29)位于Si发射区(24)的正上方；
所述等温共发射区横向SiGe异质结双极晶体管仅具有一个Si发射区(24)以及多个Si集电区(22)和多个SiGe基区(23)，且Si集电区(22)和SiGe基区(23)数量相等；
所述Si发射区(24)位于SiO2埋氧层(21)正上方，所述Si集电区(22)呈中心对称分布；所述SiGe基区(23)与Si集电区(22)和Si发射区(24)相邻且以Si发射区(24)为对称中心呈中心对称分布；
2、进一步，所述SiO2埋氧层(21)厚度介于20nm到30nm之间；
3、进一步，所述Si集电区(22)、SiGe基区(23)、Si发射区(24)厚度相等，均介于20nm到30nm之间；
4、进一步，所述多晶硅层(25)宽度介于18nm到40nm之间，厚度介于5nm到10nm之间；
5、进一步，所述Si发射区(24)宽度介于50nm到80nm之间；
6、进一步，所述Si集电区(22)宽度介于50nm到80nm之间；
7、进一步，所述SiGe基区(23)宽度介于22nm到50nm之间。
所述晶体管引入的以Si发射区为对称中心的中心对称分布结构不局限于具有四个子晶体管的横向SiGe HBT，还适用于具有多个子晶体管的横向SiGe HBT。
所述晶体管采用以Si发射区为对称中心的中心对称分布结构，不仅可以减小各子晶体管之间的热耦合，改善各子晶体管的散热能力，还可有效降低各子晶体管的热阻，改善器件的整体温度分布，从而实现所述晶体管等温分布的目的。
与常规的横向SiGe HBT相比，本发明所述的等温共发射区横向SiGe HBT结温更低，器件的温度分布更加均匀，有利于器件的热稳定工作。
附图说明
结合附图所进行的下列描述，可进一步理解本发明的目的和优点。在这些附图中：
图1示例了具有四个子晶体管的常规横向SiGe HBT的俯视和剖面结构示意图；
图2示例了本发明实施例1的俯视和剖面结构示意图；
图3示例了具有六个子晶体管的常规横向SiGe HBT的俯视和剖面结构示意图；
图4示例了本发明实施例2的俯视和剖面结构示意图；
图5示例了具有四个子晶体管的常规横向SiGe HBT的温度分布；
图6示例了本发明实施例1的温度分布；
图7示例了本发明实施例1对各子晶体管热阻分布的改善；
图8示例了本发明实施例1对各子晶体管集电极电流分布的改善；
图9示例了具有六个子晶体管的常规横向SiGe HBT的温度分布；
图10示例了本发明实施例2的温度分布；
图11示例了本发明实施例2对各子晶体管热阻分布的改善；
图12示例了本发明实施例2对各子晶体管集电极电流分布的改善。
具体实施方式
本发明实施例分别以具有四个子晶体管和六个子晶体管的横向SiGe HBTs为例，对本发明内容进行具体表述。本发明涉及领域并不限制于此。
实施例1：
图2示例了具有四个子晶体管的共发射区横向SiGe HBT的俯视和剖面结构示意图，其中包括Si衬底(20)、SiO2埋氧层(21)，以及位于SiO2埋氧层(21)上方的Si集电区(22)、SiGe基区(23)、Si发射区(24)；所述SiO2埋氧层(21)位于Si衬底(20)正上方，厚度为20nm；所述Si集电区(22)呈中心对称分布，各子晶体管对应的集电区宽度(WC)为65nm；所述Si发射区(24)各子晶体管对应的发射区宽度(WE)为50nm；所述SiGe基区(23)与Si集电区(22)和Si发射区(24)相邻且以Si发射区(24)为对称中心呈中心对称分布，各子晶体管对应的基区宽度(WB)为22nm。同时，所述Si发射区(24)、SiGe基区(23)、Si集电区(22)厚度相等，均为20nm。多晶硅层(25)位于所述SiGe基区(23)的正上方，两侧由SiO2侧墙(26)包围，且多晶硅层(25)的宽度为18nm，厚度为5nm；集电极电极(27)位于Si集电区(22)的正上方；基极电极(28)位于多晶硅层(25)的正上方；所述发射极电极(29)位于Si发射区(24)的正上方。
本发明所述的等温共发射区横向SiGe HBT不仅适用于具有四个子晶体管的器件，还可根据应用需要，设计出具有多个子晶体管的横向SiGe HBT。本发明进一步以具有六个子晶体管的横向SiGe HBT为例，给出了具有多个子晶体管的等温共发射区横向SiGe HBT的设计方案。
实施例2：
图4示例了具有六个子晶体管的等温共发射区横向SiGe HBT的俯视和剖面结构示意图，其中包括Si衬底(40)、SiO2埋氧层(41)，以及位于SiO2埋氧层(41)正上方的Si集电区(42)、SiGe基区(43)和Si发射区(44)；所述SiO2埋氧层(41)位于Si衬底(40)正上方，厚度为20nm；所述Si集电区(42)呈中心对称分布，各子晶体管对应的集电区宽度(WC)为65nm；所述Si发射区(44)各子晶体管对应的发射区宽度(WE)为86.6nm；所述SiGe基区(43)与Si集电区(42)和Si发射区(44)相邻且以Si发射区(44)为对称中心呈中心对称分布，各子晶体管对应的基区宽度(WB)为22nm。同时，所述Si发射区(44)、SiGe基区(43)和Si集电区(42)厚度相等，均为20nm；多晶硅层(45)位于所述SiGe基区(43)的正上方，两侧由SiO2侧墙(46)包围，且多晶硅层(45)的宽度为18nm，厚度为5nm；集电极电极(47)位于Si集电区(42)的正上方；基极电极(48)位于多晶硅层(45)的正上方；发射极电极(49)位于Si发射区(42)的正上方。
为了更好地展现本发明晶体管的性能，以具有四个子晶体管和六个子晶体管的器件为例，分别比较了本发明实施例和常规横向SiGeHBT的温度分布、热阻分布和集电极电流分布。
图5和图6分别示例了具有四个子晶体管的常规横向SiGe HBT和本发明实施例1的温度分布。可以看出，常规横向SiGe HBT的峰值结温主要位于器件中心区域两个子晶体管的集电结处；而本发明实施例1的峰值结温均匀分布在四个子晶体管的集电结处。进一步地，当环境温度为300K、工作电压为5V、总集电极电流为12μA时，常规横向SiGe HBT的峰值结温高达413.53K；而本发明实施例1的峰值结温仅为394.41K，且各子晶体管具有相同的峰值结温。
图7示例了本发明实施例1对各子晶体管热阻分布的改善情况，并与常规横向SiGeHBT各子晶体管热阻分布进行了比较。当环境温度为300K、工作电压为5V、总集电极电流为12μA时，常规横向SiGeHBT中心处子晶体管的热阻高达7568.67K/mW，各子晶体管间的热阻相差达110K/mW；而本发明实施例1中各子晶体管具有相同的热阻值，仅为6294K/mW。
图8示例了本发明实施例1对各子晶体管集电极电流分布的改善情况，并与常规横向SiGe HBT各子晶体管集电极电流分布的进行比较。当环境温度为300K、工作电压为5V、总集电极电流为12μA时，常规横向SiGe HBT中心处子晶体管的集电极电流高达3.2μA，各子晶体管间的集电极电流相差达0.4μA；而本发明实施例1中各子晶体管具有相同的集电极电流，仅为3μA。
进一步地，图9和图10分别示例了具有六个子晶体管的常规横向SiGe HBT和本发明实施例2的温度分布。可以看出，常规横向SiGe HBT的峰值结温依然位于器件中心区域两个子晶体管的集电结处；而本发明实施例2的峰值结温却均匀分布在六个子晶体管的集电结处。进一步地，当环境温度为300K、工作电压为5V、总集电极电流为18μA时，与常规横向SiGe HBT相比，本发明实施例2的峰值结温降低了28.75K，改善了6.89％，同时各子晶体管依然保持了相同的峰值结温。
图11示例了本发明实施例2对各子晶体管热阻分布的改善情况，并与常规横向SiGe HBT各子晶体管热阻分布进行了比较。当环境温度为300K、工作电压为5V、总集电极电流为18μA时，常规横向SiGe HBT中心处子晶体管的热阻高达7799.33K/mW，各子晶体管间的热阻相差达1399.33K/mW；而本发明实施例2中各子晶体管具有相同的热阻值，仅为5882.67K/mW。
图12示例了本发明实施例2对各子晶体管集电极电流分布的改善情况，并与常规横向SiGe HBT各子晶体管集电极电流分布的进行比较。当环境温度为300K、工作电压为5V、总集电极电流为18μA时，常规横向SiGe HBT中心处子晶体管的集电极电流高达4.2μA，各子晶体管间的集电极电流相差达3.2μA；而本发明实施例2中各子晶体管具有相同的集电极电流，仅为3μA。
上述结果均显示了本发明实施例的优越性，本发明对设计和制造等温的横向SiGeHBT具有重要的理论和实际意义。
Claims (7)
1.一种等温共发射区横向SiGe异质结双极晶体管，其特征在于：
包括Si衬底(20)，SiO2埋氧层(21)，以及位于SiO2埋氧层(21)上方的Si集电区(22)、SiGe基区(23)和Si发射区(24)；所述SiO2埋氧层(21)位于Si衬底(20)正上方，多晶硅层(25)位于所述SiGe基区(23)的正上方，并且两侧由SiO2侧墙(26)包围，集电极电极(27)位于Si集电区(22)的正上方；基极电极(28)位于多晶硅层(25)的正上方；发射极电极(29)位于Si发射区(24)的正上方；
所述等温共发射区横向SiGe异质结双极晶体管仅具有一个Si发射区(24)以及多个Si集电区(22)和多个SiGe基区(23)，且Si集电区(22)和SiGe基区(23)数量相等；
所述Si发射区(24)位于SiO2埋氧层(21)正上方，所述Si集电区(22)呈中心对称分布；所述SiGe基区(23)与Si集电区(22)和Si发射区(24)相邻且以Si发射区(24)为对称中心呈中心对称分布。
2.根据权利要求1所述的等温共发射区横向SiGe异质结双极晶体管，其特征在于：
所述SiO2埋氧层(21)厚度介于20nm到30nm之间。
3.根据权利要求1所述的等温共发射区横向SiGe异质结双极晶体管，其特征在于：
所述Si集电区(22)、SiGe基区(23)、Si发射区(24)厚度相等，均介于20nm到30nm之间。
4.根据权利要求1所述的等温共发射区横向SiGe异质结双极晶体管，其特征在于：
所述多晶硅层(25)宽度介于18nm到40nm之间，厚度介于5nm到10nm之间。
5.根据权利要求1所述的等温共发射区横向SiGe异质结双极晶体管，其特征在于：
所述Si发射区(24)宽度介于50nm到80nm之间。
6.根据权利要求1所述的等温共发射区横向SiGe异质结双极晶体管，其特征在于：
所述Si集电区(22)宽度介于50nm到80nm之间。
7.根据权利要求1所述的等温共发射区横向SiGe异质结双极晶体管，其特征在于：
所述SiGe基区(23)宽度介于22nm到50nm之间。
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