CN110310921A - 一种显示基板及其制作方法、显示面板及显示装置 - Google Patents

一种显示基板及其制作方法、显示面板及显示装置 Download PDF

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CN110310921A
CN110310921A CN201910615762.5A CN201910615762A CN110310921A CN 110310921 A CN110310921 A CN 110310921A CN 201910615762 A CN201910615762 A CN 201910615762A CN 110310921 A CN110310921 A CN 110310921A
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张建业
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BOE Technology Group Co Ltd
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Abstract

本发明提供了一种显示基板及其制作方法、显示面板及显示装置，涉及显示技术领域。本发明通过在衬底基板上形成薄膜晶体管，依次形成钝化层和平坦层，在平坦层上形成金属掩膜层，对金属掩膜层进行图形化处理，以形成待刻蚀孔，对待刻蚀孔在垂直于衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿平坦层和钝化层的过孔，并去除平坦层上剩余的金属掩膜层。通过在平坦层上增加一层金属掩膜层，在对金属掩膜层进行图形化处理形成待刻蚀孔时，金属掩膜层上涂覆的光刻胶较为均匀，形成的待刻蚀孔不会出现刻蚀不完全或过刻的现象，后续通过待刻蚀孔形成贯穿平坦层和钝化层的过孔时，也不会出现刻蚀不完全或过刻的现象，提高显示面板的良率。

Description

一种显示基板及其制作方法、显示面板及显示装置
技术领域
本发明涉及显示技术领域，特别是涉及一种显示基板及其制作方法、显示面板及显示装置。
背景技术
随着显示技术的不断发展，显示产品逐渐向高分辨率、高色域、高画质和高寿命的方向发展，而采用喷墨打印工艺形成的OLED(Organic Light Emitting Diode，有机发光二极管)显示面板相对于采用蒸镀工艺形成的OLED显示面板具有更好的性能和寿命优势，尤其适用于大尺寸的显示产品中。
目前，显示基板中的平坦层的厚度较大，为了形成贯穿平坦层的过孔，在平坦层上涂覆的光刻胶的厚度也越大，易使得光刻胶的涂覆厚度不均，从而导致后续在形成贯穿平坦层的过孔时，易出现刻蚀不完全或过刻的现象，影响显示面板的良率。
发明内容
本发明提供一种显示基板及其制作方法、显示面板及显示装置，以解决现有的显示基板制作过程中，平坦层上的光刻胶涂覆不均匀，使得后续工艺难以进行下去，影响显示面板的良率的问题。
为了解决上述问题，本发明公开了一种显示基板的制作方法，包括：
在衬底基板上形成薄膜晶体管；
依次形成钝化层和平坦层，所述钝化层覆盖所述薄膜晶体管，所述平坦层覆盖所述钝化层；
在所述平坦层上形成金属掩膜层；
对所述金属掩膜层进行图形化处理，以形成待刻蚀孔；
对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔，并去除所述平坦层上剩余的金属掩膜层。
可选的，所述金属掩膜层的材料为Cu或AlNd。
可选的，所述对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔，并去除所述平坦层上剩余的金属掩膜层的步骤，包括：
采用第一刻蚀工艺对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层进行刻蚀，以形成贯穿所述平坦层的过渡孔；
采用第二刻蚀工艺去除所述平坦层上剩余的金属掩膜层；
在所述平坦层上涂覆光刻胶；
对所述光刻胶进行图形化处理，以去除所述过渡孔内填充的光刻胶；
采用第三刻蚀工艺对所述过渡孔在垂直于所述衬底基板的方向上露出的钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔。
可选的，所述第一刻蚀工艺和所述第三刻蚀工艺均为干法刻蚀工艺，所采用的刻蚀气体为CF4和O2的混合气体；所述第二刻蚀工艺为湿法刻蚀工艺，所采用的刻蚀溶液为酸性溶液。
可选的，所述金属掩膜层的材料为Au。
可选的，所述对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔，并去除所述平坦层上剩余的金属掩膜层的步骤，包括：
采用第四刻蚀工艺对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔；
采用第五刻蚀工艺去除所述平坦层上剩余的金属掩膜层。
可选的，所述第四刻蚀工艺为干法刻蚀工艺，所采用的刻蚀气体为CF4和O2的混合气体；所述第五刻蚀工艺为湿法刻蚀工艺，所采用的刻蚀溶液为I2、KI和水的混合溶液。
可选的，所述混合气体中CF4和O2的气体流量比为4:1至5:1。
可选的，所述金属掩膜层的厚度为至
可选的，所述平坦层的厚度为2.5μm至3.5μm。
可选的，所述待刻蚀孔在所述衬底基板上的正投影位于所述薄膜晶体管的漏极在所述衬底基板上的正投影所在的区域内。
可选的，所述在衬底基板上形成薄膜晶体管的步骤，包括：
在所述衬底基板上通过构图工艺形成遮光层；
形成覆盖所述遮光层的缓冲层；
在所述缓冲层上通过构图工艺形成有源层；
在所述有源层上通过构图工艺依次形成栅绝缘层和栅极；
通过构图工艺形成层间介质层，所述层间介质层覆盖所述缓冲层、所述有源层、所述栅绝缘层和所述栅极；
在所述层间介质层上通过构图工艺形成源极和漏极，所述源极和所述漏极分别通过所述层间介质层上的过孔与所述有源层连接。
为了解决上述问题，本发明还公开了一种显示基板，采用上述的显示基板的制作方法制成。
为了解决上述问题，本发明还公开了一种显示面板，包括上述的显示基板。
为了解决上述问题，本发明还公开了一种显示装置，包括上述的显示面板。
与现有技术相比，本发明包括以下优点：
通过在平坦层上增加一层金属掩膜层，在对金属掩膜层进行图形化处理以形成待刻蚀孔时，需要在金属掩膜层上涂覆光刻胶，而金属掩膜层与光刻胶中的溶剂不会发生交联，使得光刻胶的涂覆较为均匀，且由于是通过金属掩膜层作为对平坦层和钝化层进行刻蚀的掩膜版，金属掩膜层上涂覆的光刻胶的厚度无需很大，使得光刻胶的涂覆速度较快，进而也使得光刻胶的涂覆较为均匀，则形成的待刻蚀孔也不会出现刻蚀不完全或过刻的现象，后续在通过待刻蚀孔刻蚀平坦层和钝化层以形成贯穿平坦层和钝化层的过孔时，也不会出现刻蚀不完全或过刻的现象，且刻蚀气体不易刻蚀金属掩膜层，使得待刻蚀孔外的平坦层和钝化层都不会被刻蚀掉，使得后续工艺可以正常进行下去，从而提高显示面板的良率。
附图说明
图1示出了本发明实施例的一种显示基板的制作方法的流程图；
图2示出了本发明实施例在衬底基板上依次形成薄膜晶体管、钝化层和平坦层后得到的结构示意图；
图3示出了本发明实施例在对平坦层上形成的金属掩膜层进行图形化处理后得到的结构示意图；
图4示出了本发明第一种实施例的显示基板的制作方法的具体流程图；
图5示出了本发明第一种实施例采用第一刻蚀工艺对待刻蚀孔内的平坦层进行刻蚀后得到的结构示意图；
图6示出了本发明第一种实施例采用第二刻蚀工艺去除平坦层上剩余的金属掩膜层后得到的结构示意图；
图7示出了本发明第一种实施例对平坦层上涂覆的光刻胶进行图形化处理后得到的结构示意图；
图8示出了本发明第一种实施例采用第三刻蚀工艺对过渡孔内的钝化层进行刻蚀后得到的结构示意图；
图9示出了本发明第二种实施例的显示基板的制作方法的具体流程图；
图10示出了本发明第二种实施例采用第四刻蚀工艺对待刻蚀孔内的平坦层和钝化层进行刻蚀后得到的结构示意图；
图11示出了本发明第二种实施例采用第五刻蚀工艺去除平坦层上剩余的金属掩膜层后得到的结构示意图。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。
目前，在显示基板上采用喷墨打印工艺制作有机发光器件时，通常需要显示基板具有良好的平坦性，在实际制作过程中，为了降低大尺寸显示面板的IR drop(压降)，需要增加薄膜晶体管的源漏极和栅极的厚度，使得显示基板的膜层段差增大，导致平坦性降低，为了提高显示基板的平坦性，需要增加平坦层的厚度；此外，为了提高源漏极与阳极之间的电容以减少寄生电容，也需要增加平坦层的厚度。因此，会使得显示基板中的平坦层的厚度较大。
现有技术中，是在平坦层上涂覆光刻胶以形成贯穿平坦层的过孔，当平坦层的厚度提升时，在对平坦层进行刻蚀形成贯穿平坦层的过孔时，刻蚀的时间较长，使得在平坦层上涂覆的光刻胶的厚度也增大，当光刻胶的涂覆厚度越大时，涂覆的速度越慢，导致光刻胶涂覆不均匀，且由于光刻胶与平坦层均为有机材料，平坦层容易与光刻胶中的溶剂发生交联，进而也会导致光刻胶涂覆不均匀；光刻胶涂覆较厚处，经曝光、显影后，光刻胶未完全去除，导致后续对平坦层的刻蚀不完全，光刻胶涂覆较薄处，经曝光、显影后，光刻胶去除后还会对部分的平坦层进行去除，导致后续对平坦层造成过刻，使得后续工艺难以进行下去，影响显示面板的良率。
参照图1，示出了本发明实施例的一种显示基板的制作方法的流程图，具体可以包括如下步骤：
步骤101，在衬底基板上形成薄膜晶体管。
如图2所示，首先提供一衬底基板21，该衬底基板21可以为PI(Polyimide，聚酰亚胺)基板或玻璃基板，在衬底基板21上形成薄膜晶体管22。
其中，薄膜晶体管22包括：形成在衬底基板21上的遮光层221，覆盖遮光层221的缓冲层222，形成在缓冲层222上的有源层223，形成在有源层223上的栅绝缘层224，形成在栅绝缘层224上的栅极225，覆盖缓冲层222、有源层223、栅绝缘层224和栅极225的层间介质层226，形成在层间介质层226上的源极227和漏极228，源极227和漏极228分别通过层间介质层226上的过孔与有源层223连接。
遮光层221的材料可以为Mo，缓冲层222的材料可以为氧化硅、氮化硅或氮氧化硅，有源层223的材料可以为IGZO(Indium GalliumZinc Oxide，铟镓锌氧化物)，栅绝缘层224的材料可以为氧化硅或氮化硅，栅极225的材料可以为铝、铝合金、铜等金属材料，层间介质层226的材料可以为氧化硅或氮化硅，源极227和漏极228的材料可以为铝、铝合金、铜等金属材料。
具体的，步骤101可以包括：在所述衬底基板上通过构图工艺形成遮光层；形成覆盖所述遮光层的缓冲层；在所述缓冲层上通过构图工艺形成有源层；在所述有源层上通过构图工艺依次形成栅绝缘层和栅极；通过构图工艺形成层间介质层，所述层间介质层覆盖所述缓冲层、所述有源层、所述栅绝缘层和所述栅极；在所述层间介质层上通过构图工艺形成源极和漏极，所述源极和所述漏极分别通过所述层间介质层上的过孔与所述有源层连接。
首先，在衬底基板21通过构图工艺形成遮光层221，具体的，可采用溅射工艺在衬底基板21沉积遮光层薄膜，在遮光层薄膜上涂覆光刻胶，对光刻胶进行曝光、显影，对遮光层薄膜进行刻蚀，剥离遮光层薄膜上剩余的光刻胶，从而在衬底基板21形成遮光层221；然后，采用PECVD(Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积法)或其它沉积方法沉积缓冲层222，在缓冲层222上沉积有源层薄膜，对有源层薄膜进行图形化处理形成有源层223；接着，在有源层223上沉积栅绝缘层薄膜，对栅绝缘层薄膜进行图形化处理形成栅绝缘层224，在栅绝缘层224上沉积栅极薄膜，对栅极薄膜进行图形化处理形成栅极225；然后，沉积层间介质层薄膜，并对层间介质层薄膜进行图形化处理，形成贯穿层间介质层226的过孔，层间介质层226覆盖缓冲层222、有源层223、栅绝缘层224和栅极225；最后，在层间介质层226上沉积源漏极金属薄膜，并对源漏极金属薄膜进行图形化处理，形成源极227和漏极228，且源极227和漏极228分别通过层间介质层226上的过孔与有源层223连接。
步骤102，依次形成钝化层和平坦层，所述钝化层覆盖所述薄膜晶体管，所述平坦层覆盖所述钝化层。
如图2所示，在衬底基板21上形成薄膜晶体管22之后，先形成覆盖薄膜晶体管22的钝化层23，然后再形成覆盖钝化层23的平坦层24。
其中，钝化层23的材料为氮化硅或氧化硅，可采用PECVD或其他沉积方法形成；平坦层24的材料为热固性材料，热固性材料可以为有机硅氧烷，平坦层24的厚度为2.5μm至3.5μm，可以采用涂布工艺或旋涂工艺在钝化层23上形成平坦层24。
步骤103，在所述平坦层上形成金属掩膜层。
步骤104，对所述金属掩膜层进行图形化处理，以形成待刻蚀孔。
如图3所示，在平坦层24上采用溅射工艺形成金属掩膜层25，在金属掩膜层25上涂覆光刻胶，采用掩膜板对金属掩膜层25上涂覆的光刻胶进行曝光，曝光后进行显影，然后，对金属掩膜层25进行刻蚀，形成贯穿金属掩膜层25的待刻蚀孔M1，最后，去除金属掩膜层25上剩余的光刻胶。
具体的，是在薄膜晶体管22的漏极228位置处形成贯穿金属掩膜层25的待刻蚀孔M1，即待刻蚀孔M1在衬底基板21上的正投影位于薄膜晶体管22的漏极228在衬底基板21上的正投影所在的区域内。
通过在平坦层24上增加一层金属掩膜层25，在对金属掩膜层25进行图形化处理以形成待刻蚀孔M1时，需要在金属掩膜层25上涂覆光刻胶，而金属掩膜层25与光刻胶中的溶剂不会发生交联，使得光刻胶的涂覆较为均匀，且由于是通过金属掩膜层25作为后续对平坦层24和钝化层23进行刻蚀的掩膜版，金属掩膜层25上涂覆的光刻胶的厚度无需很大，使得光刻胶的涂覆速度较快，进而也使得光刻胶的涂覆较为均匀，则形成的待刻蚀孔M1也不会出现刻蚀不完全或过刻的现象；且由于金属掩膜层25的阻挡，在对金属掩膜层25上涂覆的光刻胶进行曝光和显影时，也不会对平坦层24和钝化层造成影响。
其中，金属掩膜层25的厚度为至在本发明的第一种实施例中，金属掩膜层25的材料为Cu或AlNd；在本发明的第二种实施例中，金属掩膜层25的材料为Au。
当金属掩膜层25的材料为Cu或AlNd时，可采用酸性溶液对金属掩膜层25进行刻蚀形成待刻蚀孔M1，例如，酸性溶液可以为磷酸、硝酸、醋酸以及盐酸的混合液体；当金属掩膜层25的材料为Au时，可采用I2、KI和水的混合溶液对金属掩膜层25进行刻蚀形成待刻蚀孔M1。
步骤105，对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔，并去除所述平坦层上剩余的金属掩膜层。
在本发明实施例中，在对金属掩膜层25进行图形化处理，以形成待刻蚀孔M1之后，通过待刻蚀孔M1，对待刻蚀孔M1在垂直于衬底基板21的方向上露出的平坦层24和钝化层23进行刻蚀，形成贯穿平坦层24和钝化层23的过孔，并去除平坦层24上剩余的金属掩膜层25。
由于待刻蚀孔M1不会出现刻蚀不完全或过刻的现象，通过待刻蚀孔M1刻蚀平坦层24和钝化层23以形成贯穿平坦层24和钝化层23的过孔时，也不会出现刻蚀不完全或过刻的现象，且在刻蚀形成贯穿平坦层24和钝化层23的过孔时，所采用的刻蚀气体不易刻蚀金属掩膜层25，使得待刻蚀孔M1外的平坦层24和钝化层23都不会被刻蚀掉，使得后续工艺可以正常进行下去，从而提高显示面板的良率。
参照图4，示出了本发明第一种实施例的显示基板的制作方法的具体流程图。
在本发明的第一种实施例中，当金属掩膜层25的材料为Cu或AlNd时，步骤105具体可以包括：
子步骤1051，采用第一刻蚀工艺对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层进行刻蚀，以形成贯穿所述平坦层的过渡孔；
子步骤1052，采用第二刻蚀工艺去除所述平坦层上剩余的金属掩膜层；
子步骤1053，在所述平坦层上涂覆光刻胶；
子步骤1054，对所述光刻胶进行图形化处理，以去除所述过渡孔内填充的光刻胶；
子步骤1055，采用第三刻蚀工艺对所述过渡孔在垂直于所述衬底基板的方向上露出的钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔。
图5至图8为本发明第一种实施例制作显示基板的示意图。
如图5所示，采用第一刻蚀工艺对待刻蚀孔M1在垂直于衬底基板21的方向上露出的平坦层24进行刻蚀，以形成贯穿平坦层24的过渡孔M2，第一刻蚀工艺为干法刻蚀工艺，所采用的刻蚀气体为CF4和O2的混合气体，混合气体中CF4和O2的气体流量比为4:1至5:1。
由于在对待刻蚀孔M1内露出的平坦层24进行刻蚀时，金属掩膜层25不易被第一刻蚀工艺所采用的刻蚀气体刻蚀，则除过渡孔M2之外的任意位置处的平坦层24都不会被刻蚀掉。
如图6所示，采用第二刻蚀工艺去除平坦层24上剩余的金属掩膜层25，第二刻蚀工艺为湿法刻蚀工艺，所采用的刻蚀溶液为酸性溶液，例如，酸性溶液可以为磷酸、硝酸、醋酸以及盐酸的混合液体。
如图7所示，在去除平坦层24上剩余的金属掩膜层25之后，由于还需要对过渡孔M2在垂直于衬底基板21的方向上露出的钝化层23进行刻蚀，则需要在平坦层24上涂覆光刻胶26，然后，对光刻胶26进行图形化处理，以去除过渡孔M2内填充的光刻胶26。
需要说明的是，在平坦层24上涂覆光刻胶26时，光刻胶26会将平坦层24之前刻蚀的过渡孔M2填充掉，但是在采用掩膜板对平坦层24上涂覆的光刻胶26进行曝光，曝光之后进行显影，可将过渡孔M2内填充的光刻胶26去除掉；且为了保证过渡孔M2内填充的光刻胶26全部被去除掉，曝光显影后光刻胶26去除的区域的孔径需要大于过渡孔M2的孔径。
由于钝化层23的厚度较薄，通常为左右，远小于平坦层24的厚度，则后续对过渡孔M2在垂直于衬底基板21的方向上露出的钝化层23进行刻蚀时，刻蚀的时间较短，因此，在去除平坦层24上剩余的金属掩膜层25之后，在平坦层24上涂覆的光刻胶26的厚度较薄，则使得光刻胶26的涂覆速度较快，光刻胶26的涂覆也较为均匀，不会因光刻胶26的涂覆不均导致后续对钝化层23进行刻蚀时出现刻蚀不完全或过刻的现象。
如图8所示，采用第三刻蚀工艺对过渡孔M2在垂直于衬底基板21的方向上露出的钝化层23进行刻蚀，以形成贯穿平坦层24和钝化层23的过孔M3，刻蚀完成后，还需要对平坦层24上剩余的光刻胶26进行剥离，从而得到显示基板；第三刻蚀工艺为干法刻蚀工艺，所采用的刻蚀气体为CF4和O2的混合气体，混合气体中CF4和O2的气体流量比为4:1至5:1。
在采用第一刻蚀工艺对待刻蚀孔M1在垂直于衬底基板21的方向上露出的平坦层24进行刻蚀，形成贯穿平坦层24的过渡孔M2之后，需要先去除平坦层24上剩余的金属掩膜层25，再对过渡孔M2在垂直于衬底基板21的方向上露出的钝化层23进行刻蚀，假如一次性将待刻蚀孔M1在垂直于衬底基板21的方向上露出的平坦层24和钝化层23都刻蚀掉，形成贯穿平坦层24和钝化层23的过孔，后续在采用酸性溶液去除平坦层24上剩余的金属掩膜层25时，会刻蚀掉过孔M3处的漏极228，导致显示基板制作失败。
需要说明的是，由于过孔M3是经过两次刻蚀形成的，且平坦层24上光刻胶26去除的区域的孔径大于过渡孔M2的孔径，则在对过渡孔M2在垂直于衬底基板21的方向上露出的钝化层23进行刻蚀时，也会使得部分的平坦层24被刻蚀掉，导致形成的过孔M3包括两个依次连通的子孔，分别为第一子孔和第二子孔，第一子孔指的是平坦层24处的过孔，第二子孔指的是钝化层23处的过孔，且第一子孔的坡度角小于第二子孔的坡度角，使得过孔M3更为平缓，后续在过孔M3处形成阳极时，使得阳极与漏极228的搭接更佳。
参照图9，示出了本发明第二种实施例的显示基板的制作方法的具体流程图。
在本发明的第二种实施例中，当金属掩膜层的材料为Au时，步骤105具体可以包括：
子步骤1056，采用第四刻蚀工艺对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔；
子步骤1057，采用第五刻蚀工艺去除所述平坦层上剩余的金属掩膜层。
图10至图11为本发明第二种实施例制作显示基板的示意图。
如图10所示，采用第四刻蚀工艺对待刻蚀孔M1在垂直于衬底基板21的方向上露出的平坦层24和钝化层23进行刻蚀，以形成贯穿平坦层24和钝化层23的过孔M3，第四刻蚀工艺为干法刻蚀工艺，所采用的刻蚀气体为CF4和O2的混合气体，混合气体中CF4和O2的气体流量比为4:1至5:1。
由于在对待刻蚀孔M1在垂直于衬底基板21的方向上露出的平坦层24和钝化层23进行刻蚀时，金属掩膜层25不易被第四刻蚀工艺所采用的刻蚀气体刻蚀，则除过孔M3之外的任意位置处的平坦层24和钝化层23都不会被刻蚀掉。
如图11所示，采用第五刻蚀工艺去除平坦层24上剩余的金属掩膜层25，第五刻蚀工艺为湿法刻蚀工艺，所采用的刻蚀溶液为I2、KI和水的混合溶液，混合溶液中I2、KI和水的摩尔比例为1：2：8。
由于I2、KI和水的混合溶液不会刻蚀漏极228，因此，可以一步刻蚀出贯穿平坦层24和钝化层23的过孔M3，刻蚀出过孔M3后，再通过I2、KI和水的混合溶液去除掉平坦层24上剩余的金属掩膜层25，从而节省工艺时间，并减少掩膜板的使用。
需要说明的是，图8和图11所示的显示基板，主要区别在于过孔M3的形状不同，图8所示的过孔M3更为平缓。
在本发明实施例中，通过在平坦层上增加一层金属掩膜层，在对金属掩膜层进行图形化处理以形成待刻蚀孔时，需要在金属掩膜层上涂覆光刻胶，而金属掩膜层与光刻胶中的溶剂不会发生交联，使得光刻胶的涂覆较为均匀，且由于是通过金属掩膜层作为对平坦层和钝化层进行刻蚀的掩膜版，金属掩膜层上涂覆的光刻胶的厚度无需很大，使得光刻胶的涂覆速度较快，进而也使得光刻胶的涂覆较为均匀，则形成的待刻蚀孔也不会出现刻蚀不完全或过刻的现象，后续在通过待刻蚀孔刻蚀平坦层和钝化层以形成贯穿平坦层和钝化层的过孔时，也不会出现刻蚀不完全或过刻的现象，且刻蚀气体不易刻蚀金属掩膜层，使得待刻蚀孔外的平坦层和钝化层都不会被刻蚀掉，使得后续工艺可以正常进行下去，从而提高显示面板的良率。
本发明实施例还提供了一种显示基板，采用上述的显示基板的制作方法制成。
首先，在衬底基板21上形成薄膜晶体管22，然后，形成覆盖薄膜晶体管22的钝化层23和覆盖钝化层23的平坦层24，接着，在平坦层24上形成金属掩膜层25，对金属掩膜层25进行图形化处理，以形成待刻蚀孔M1，最后，通过待刻蚀孔M1，对待刻蚀孔M1在垂直于衬底基板21的方向上露出的平坦层24和钝化层23进行刻蚀，形成贯穿平坦层24和钝化层23的过孔M3，并去除平坦层24上剩余的金属掩膜层25，从而得到如图8或图11所示的显示基板。
本发明实施例还提供了一种显示面板，包括上述的显示基板。
在得到如图8或图11所示的显示基板之后，还可在平坦层24上形成阳极，阳极通过过孔M3与漏极228连接，然后，依次制作像素界定层、有机发光层、阴极等膜层，得到显示面板。
本发明实施例还提供了一种显示装置，包括上述的显示面板。
该显示装置为OLED显示装置，该OLED显示装置可应用在手机、平板电脑、电视机、显示器、笔记本电脑、导航仪等任何具有显示功能的显示装置中。
在本发明实施例中，通过在平坦层上增加一层金属掩膜层，在对金属掩膜层进行图形化处理以形成待刻蚀孔时，需要在金属掩膜层上涂覆光刻胶，而金属掩膜层与光刻胶中的溶剂不会发生交联，使得光刻胶的涂覆较为均匀，且由于是通过金属掩膜层作为对平坦层和钝化层进行刻蚀的掩膜版，金属掩膜层上涂覆的光刻胶的厚度无需很大，使得光刻胶的涂覆速度较快，进而也使得光刻胶的涂覆较为均匀，则形成的待刻蚀孔也不会出现刻蚀不完全或过刻的现象，后续在通过待刻蚀孔刻蚀平坦层和钝化层以形成贯穿平坦层和钝化层的过孔时，也不会出现刻蚀不完全或过刻的现象，且刻蚀气体不易刻蚀金属掩膜层，使得待刻蚀孔外的平坦层和钝化层都不会被刻蚀掉，使得后续工艺可以正常进行下去，从而提高显示面板的良率。
对于前述的各方法实施例，为了简单描述，故将其都表述为一系列的动作组合，但是本领域技术人员应该知悉，本发明并不受所描述的动作顺序的限制，因为依据本发明，某些步骤可以采用其他顺序或者同时进行。其次，本领域技术人员也应该知悉，说明书中所描述的实施例均属于优选实施例，所涉及的动作和模块并不一定是本发明所必须的。
本说明书中的各个实施例均采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似的部分互相参见即可。
最后，还需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、商品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、商品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、商品或者设备中还存在另外的相同要素。
以上对本发明所提供的一种显示基板及其制作方法、显示面板及显示装置，进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的一般技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (15)

1.一种显示基板的制作方法，其特征在于，包括：
在衬底基板上形成薄膜晶体管；
依次形成钝化层和平坦层，所述钝化层覆盖所述薄膜晶体管，所述平坦层覆盖所述钝化层；
在所述平坦层上形成金属掩膜层；
对所述金属掩膜层进行图形化处理，以形成待刻蚀孔；
对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔，并去除所述平坦层上剩余的金属掩膜层。
2.根据权利要求1所述的方法，其特征在于，所述金属掩膜层的材料为Cu或AlNd。
3.根据权利要求2所述的方法，其特征在于，所述对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔，并去除所述平坦层上剩余的金属掩膜层的步骤，包括：
采用第一刻蚀工艺对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层进行刻蚀，以形成贯穿所述平坦层的过渡孔；
采用第二刻蚀工艺去除所述平坦层上剩余的金属掩膜层；
在所述平坦层上涂覆光刻胶；
对所述光刻胶进行图形化处理，以去除所述过渡孔内填充的光刻胶；
采用第三刻蚀工艺对所述过渡孔在垂直于所述衬底基板的方向上露出的钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔。
4.根据权利要求3所述的方法，其特征在于，所述第一刻蚀工艺和所述第三刻蚀工艺均为干法刻蚀工艺，所采用的刻蚀气体为CF4和O2的混合气体；所述第二刻蚀工艺为湿法刻蚀工艺，所采用的刻蚀溶液为酸性溶液。
5.根据权利要求1所述的方法，其特征在于，所述金属掩膜层的材料为Au。
6.根据权利要求5所述的方法，其特征在于，所述对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔，并去除所述平坦层上剩余的金属掩膜层的步骤，包括：
采用第四刻蚀工艺对所述待刻蚀孔在垂直于所述衬底基板的方向上露出的平坦层和钝化层进行刻蚀，以形成贯穿所述平坦层和所述钝化层的过孔；
采用第五刻蚀工艺去除所述平坦层上剩余的金属掩膜层。
7.根据权利要求6所述的方法，其特征在于，所述第四刻蚀工艺为干法刻蚀工艺，所采用的刻蚀气体为CF4和O2的混合气体；所述第五刻蚀工艺为湿法刻蚀工艺，所采用的刻蚀溶液为I2、KI和水的混合溶液。
8.根据权利要求4或7所述的方法，其特征在于，所述混合气体中CF4和O2的气体流量比为4:1至5:1。
9.根据权利要求1所述的方法，其特征在于，所述金属掩膜层的厚度为至
10.根据权利要求1所述的方法，其特征在于，所述平坦层的厚度为2.5μm至3.5μm。
11.根据权利要求1所述的方法，其特征在于，所述待刻蚀孔在所述衬底基板上的正投影位于所述薄膜晶体管的漏极在所述衬底基板上的正投影所在的区域内。
12.根据权利要求1至11中任一项所述的方法，其特征在于，所述在衬底基板上形成薄膜晶体管的步骤，包括：
在所述衬底基板上通过构图工艺形成遮光层；
形成覆盖所述遮光层的缓冲层；
在所述缓冲层上通过构图工艺形成有源层；
在所述有源层上通过构图工艺依次形成栅绝缘层和栅极；
通过构图工艺形成层间介质层，所述层间介质层覆盖所述缓冲层、所述有源层、所述栅绝缘层和所述栅极；
在所述层间介质层上通过构图工艺形成源极和漏极，所述源极和所述漏极分别通过所述层间介质层上的过孔与所述有源层连接。
13.一种显示基板，其特征在于，采用如权利要求1至12中任一项所述的显示基板的制作方法制成。
14.一种显示面板，其特征在于，包括如权利要求13所述的显示基板。
15.一种显示装置，其特征在于，包括如权利要求14所述的显示面板。
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Publication number Priority date Publication date Assignee Title
CN110660839A (zh) * 2019-11-13 2020-01-07 京东方科技集团股份有限公司 一种显示面板及其制备方法
CN110660839B (zh) * 2019-11-13 2022-04-29 京东方科技集团股份有限公司 一种显示面板及其制备方法

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