CN110303424A - Improve the method and apparatus that electric pole plate scratches in chemical mechanical milling tech - Google Patents
Improve the method and apparatus that electric pole plate scratches in chemical mechanical milling tech Download PDFInfo
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- CN110303424A CN110303424A CN201810380558.5A CN201810380558A CN110303424A CN 110303424 A CN110303424 A CN 110303424A CN 201810380558 A CN201810380558 A CN 201810380558A CN 110303424 A CN110303424 A CN 110303424A
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000126 substance Substances 0.000 title claims abstract description 26
- 238000003701 mechanical milling Methods 0.000 title claims abstract description 10
- 238000000227 grinding Methods 0.000 claims abstract description 647
- 239000011241 protective layer Substances 0.000 claims abstract description 68
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 238000007665 sagging Methods 0.000 claims abstract description 3
- 239000007788 liquid Substances 0.000 claims description 75
- 238000004140 cleaning Methods 0.000 claims description 37
- 238000003801 milling Methods 0.000 claims description 27
- 239000002888 zwitterionic surfactant Substances 0.000 claims description 27
- 230000007246 mechanism Effects 0.000 claims description 19
- 239000006061 abrasive grain Substances 0.000 claims description 12
- 239000007787 solid Substances 0.000 claims description 12
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000002280 amphoteric surfactant Substances 0.000 description 8
- 230000006872 improvement Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 4
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 4
- 150000001413 amino acids Chemical class 0.000 description 4
- 229960003237 betaine Drugs 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention belongs to cmp technology fields; it is related to improving the method and apparatus that electric pole plate scratches in chemical mechanical milling tech; including; by wafer load on the loading platform of chemical-mechanical grinding device; chemical-mechanical grinding device further includes one first grinding table and at least one second grinding table; wafer has an assembly array area and a relatively sagging peripheral region; one insulating protective layer covers assembly array area and peripheral region, and the edge that insulating protective layer corresponds to assembly array area is formed with prominent angle；Pre-grinding is carried out to insulating protective layer first with the first grinding pad of the first grinding table, to remove prominent angle；The second grinding pad of the second grinding table is recycled to carry out main grinding for the first time to insulating protective layer, for removing insulating protective layer in assembly array area relative to the excess thickness on external zones.Method and apparatus provided by the invention can effectively reduce the scratch on semiconductor memory capacitor electric pole plate, its quality is effectively ensured.
Description
Technical field
The invention belongs to chemical grinding technical field, it is related to a kind of improvement electric pole plate and is scraped in chemical mechanical milling tech
The method and apparatus of wound.
Background technique
An insulating protective layer can be generated in semiconductor memory capacitor electric pole plate processing procedure and coats entire capacitor, therefore
The thickness that insulating protective layer needs to fill out is relatively high (> 2um), and the alias in insulating protective layer generating process causes generating
Cheng Zhonghui generates difference of height, so chemical mechanical grinding (CMP) is needed to be planarized.Since the time of grinding can be considerably long,
In order to reduce the burden of CMP grinding, etch process can be first carried out before CMP, by the SI semi-insulation protective layer in assembly array area
Removal, effectively reduces the milling time of CMP, enters back into the processing procedure that CMP completes planarization later.
It is but etched before CMP, the edge that will cause insulating protective layer after etching corresponding to assembly array area is formed
There is prominent angle, this protrudes angle and is easy to tear removing when CMP is ground to generate big particle, is grinding if this particle is fallen
It will cause subsequent wafer on mill pad and generate scratch defect, it is abnormal so as to cause short circuit occurs in subsequent metal deposition process
Phenomenon.
Summary of the invention
In view of this, the present invention provides a kind of method that scratches in chemical mechanical milling tech of improvement electric pole plate and sets
It is standby, at least to solve problems of the prior art.
In order to solve the above technical problems, the technical scheme adopted by the invention is as follows, a kind of improvement electric pole plate is in chemical machinery
The method scratched in grinding technics, including,
Wafer step is provided, on the loading platform of chemical-mechanical grinding device, the chemical mechanical grinding is set wafer load
Standby further includes one first grinding table and at least one second grinding table, and the wafer sink relatively with an assembly array area and one
Peripheral region, an insulating protective layer covers the assembly array area and the peripheral region, and the insulating protective layer corresponds to described
The edge in assembly array area is formed with prominent angle, and the insulating protective layer has in first height at the prominent angle, described
The second height in assembly array area and the third height on the peripheral region, it is high that first height is greater than described second
Degree, second height are greater than the third height；
Slow mill step in advance, is implemented on first grinding table, utilizes the first grinding pad pair of first grinding table
The insulating protective layer carries out pre-grinding, to remove the prominent angle, so that first height is close toward second height；
Main grinding steps for the first time, are implemented on second grinding table and after the mill step slow in advance, utilize
Second grinding pad of second grinding table carries out main grinding for the first time to the insulating protective layer, protects for removing the insulation
Sheath in the assembly array area relative to the excess thickness on the external zones so that first height and described second
Height is close toward the third height；
Wherein, the hardness of first grinding pad is less than the hardness of second grinding pad, and the mill step slow in advance
Grinding rate be less than the first time main grinding steps grinding rate half.
Preferably, between the mill step slow in advance and the first time main grinding steps, the method also includes: in
Between grinding steps, be implemented on first grinding table, the insulation protected using the first grinding pad of first grinding table
Sheath is ground, and the grinding rate of the intermediate grinding step is equivalent to the grinding rate of the first time main grinding steps.
Preferably, the chemical-mechanical grinding device further includes third grinding table, the method also includes: second of master grinds
Step is ground, is implemented on the third grinding table and after the first time main grinding steps, utilizes the third grinding table
Third grinding pad second main grinding is carried out to the insulating protective layer, for assisting removing the insulating protective layer described
Thickness in assembly array area, so that second height is more nearly toward the third height, wherein first grinding pad
Hardness be less than the hardness of the third grinding pad, and the grinding rate of the mill step slow in advance is less than second of master and grinds
Grind the half of the grinding rate of step.
Preferably, the chemical-mechanical grinding device further includes the 4th grinding table, the method also includes: third time master grinds
Step is ground, is implemented on the 4th grinding table and after the second main grinding steps, the 4th grinding table is utilized
The 4th grinding pad the main grinding of third time is carried out to the insulating protective layer, for realizing first height, described second high
Planarization consistent with the third height is spent, wherein the hardness of first grinding pad is less than the hard of the 4th grinding pad
Degree, and the grinding rate of the mill step slow in advance is less than the half of the grinding rate of the main grinding steps of the third time.
Preferably, the first time main grinding steps, the second main grinding steps, the main grinding steps of the third time
Milling time it is all identical and be greater than the time of pre-grinding in the mill step slow in advance.
Preferably, the Durometer A hardness of first grinding pad between 40~60, grind by second grinding pad, the third
The Shore D of mill pad and the 4th grinding pad is between 52~62.
Preferably, in the mill step slow in advance, the revolving speed of grinding head is between 13~17 revs/min, first grinding
The revolving speed of platform is between 12~16 revs/min.
Preferably, the first time main grinding steps, second main grinding steps and the main grinding of the third time
In step, the revolving speed of grinding head is between 50~70 revs/min, second grinding table, the third grinding table and described
The revolving speed of 4th grinding table is between 50~70 revs/min.
Preferably, in the mill step slow in advance, the time of pre-grinding is between 10~20s, including endpoint value.
Preferably, when the grinding of the first time main grinding, second of main grinding and the main grinding of the third time
Between between 60~70s, including endpoint value.
Preferably, the trench depth of second grinding pad is greater than the trench depth of the third grinding pad, the third
The trench depth of grinding pad is greater than the trench depth of the 4th grinding pad.
Preferably, in the mill step slow in advance, used lapping liquid is first lapping liquid of the pH value less than 6, described
It include abrasive grains of the solid content less than 2.5% in first lapping liquid；And after utilization zwitterionic surfactant is to pre-grinding
Insulating protective layer carry out first time cleaning；
When first time main grinding, used lapping liquid is second lapping liquid of the pH value less than 6, second grinding
Include abrasive grains of the solid content less than 2.0% in liquid, and using zwitterionic surfactant to main grinding for the first time after
Insulating protective layer carries out second and cleans.
Preferably, when second of main grinding, used lapping liquid is third lapping liquid of the pH value less than 6, described
It include abrasive grains of the solid content less than 1.5% in third lapping liquid, and main to second using zwitterionic surfactant
Insulating protective layer after grinding carries out third time cleaning.
Preferably, when the main grinding of the third time, used lapping liquid is fourth lapping liquid of the pH value less than 6；It is described
It include abrasive grains of the solid content less than 0.5% in 4th lapping liquid；And it is main to third time using zwitterionic surfactant
Insulating protective layer after grinding carries out the 4th cleaning.
Preferably, the mass fraction of the zwitterionic surfactant is between 2wt%~10wt%.
Preferably, the porosity of first grinding pad is greater than the porosity of second grinding pad.
It is a further object of the present invention to provide a kind of equipment for being scratched in chemical mechanical milling tech of improvement electric pole plate,
Including one first grinding table and at least one second grinding table being sequentially successively circumferentially arranged；
The first grinding pad is installed on first grinding table；The second grinding pad is installed on second grinding table；Its
In, the hardness of first grinding pad is less than the hardness of second grinding pad；
The equipment further includes grinding head rotating mechanism, and multiple grinding heads, institute are provided on the grinding head rotating mechanism
Grinding head is stated for clamping wafer to be ground, and under the drive of the grinding head rotating mechanism, rotation to corresponding grinding table
On, and apply pressure to first grinding pad on corresponding grinding table and second grinding pad.
Preferably, the equipment further includes third grinding table, first grinding table, second grinding table, described
Three grinding tables are successively circumferentially arranged, and third grinding pad, the hardness of first grinding pad are equipped on the third grinding table
Less than the hardness of the third grinding pad；The grinding head is also used to clamp the wafer to be ground, and in the grinding head
Under the drive of rotating mechanism, in rotation to third grinding table, and the third grinding pad is applied pressure to.
Preferably, the equipment further includes the 4th grinding table, first grinding table, second grinding table, described
Three grinding tables, the 4th grinding table are successively circumferentially arranged, and are equipped with the 4th grinding pad on the 4th grinding table, and described
The hardness of one grinding pad is less than the hardness of the 4th grinding pad；The grinding head is also used to clamp the wafer to be ground,
And under the drive of the grinding head rotating mechanism, in rotation to the 4th grinding table, and the 4th grinding pad is applied pressure to.
Preferably, the equipment further includes the first lapping liquid gatherer and the first cleaning device, first lapping liquid
Gatherer is set on first grinding table, for providing the first lapping liquid in first grinding pad；Described first
Cleaning device is set on first grinding table, is carried out clearly for providing zwitterionic surfactant to the wafer after grinding
It washes；
The equipment further includes the second lapping liquid gatherer and the second cleaning device, the second lapping liquid gatherer
It is set on second grinding table, for providing the second lapping liquid in second grinding pad；Second cleaning device
It is set on second grinding table, the wafer after grinding is cleaned for providing zwitterionic surfactant.
Preferably, the equipment further includes third lapping liquid gatherer and third cleaning device, the third lapping liquid
Gatherer is set on the third grinding table, for providing third lapping liquid in the third grinding pad；The third
Cleaning device is set on the third grinding table, is carried out clearly for providing zwitterionic surfactant to the wafer after grinding
It washes.
Preferably, the equipment further includes the 4th lapping liquid gatherer and the 4th cleaning device, the 4th lapping liquid
Gatherer is set on the 4th grinding table, for providing the 4th lapping liquid in the 4th grinding pad；Described 4th
Cleaning device is set on the 4th grinding table, is carried out clearly for providing zwitterionic surfactant to the wafer after grinding
It washes.
Preferably, the grinding pressure range that corresponding grinding head applies on first grinding table between 3~4psi, including
Endpoint value；The revolving speed of corresponding grinding head is between 13~17RPM, including endpoint value on first grinding table；Described first grinds
The revolving speed of platform is ground between 12~16RPM, including endpoint value；The milling time of first grinding table is between 10~20s, including end
Point value；
The grinding pressure range that corresponding grinding head applies on second grinding table is between 3~6psi, including endpoint value；
The revolving speed of corresponding grinding head is between 51~71RPM, including endpoint value on second grinding table；Second grinding table turns
Speed is between 50~70RPM, including endpoint value；The milling time of second grinding table is between 60~70s, including endpoint value.
Preferably, the grinding pressure range that corresponding grinding head applies on the third grinding table between 3~5psi, including
Endpoint value；The revolving speed of corresponding grinding head is between 51~71RPM, including endpoint value on the third grinding table；The third is ground
The revolving speed of platform is ground between 50~70RPM, including endpoint value；The milling time of the third grinding table is between 60~70s, including end
Point value.
Preferably, the grinding pressure range that corresponding grinding head applies on the 4th grinding table between 3~4psi, including
Endpoint value；The revolving speed of corresponding grinding head is between 51~71RPM, including endpoint value on 4th grinding table；Described 4th grinds
The revolving speed of platform is ground between 50~70RPM, including endpoint value；The milling time of 4th grinding table is between 60~70s, including end
Point value.
Beneficial effect
Existing CMP processing procedure can make prominent angle moment tearing break to fall and in turn result in serious scratch on grinding pad；
The application is dashed forward using lesser first grinding pad of hardness in lower grinding rate in slow mill step in advance
The removal of angle of departure, since the grinding rate of CMP and the pressure and revolving speed of grinding head and grinding table are directly proportional, the hardness of grinding pad with
Grinding rate and wafer defect are all directly proportional, therefore first using the lesser grinding rate of the lower first grinding pad collocation of hardness
By the removing of prominent angle slowly, the phenomenon that instantaneous pressure power tearing that prominent angle is contacted is removed would not be generated, is made again later
Amount of grinding needed for being removed with higher grinding rate is carried out in main grinding for the first time using the second harder grinding pad big
The grinding thickness of range removes.
To sum up, the device and method of the application can effectively avoid semiconductor memory capacitor electric pole plate from grinding in chemical machinery
It is scratched in grinding process, and simple process, equipment is improved simply, and extensive use is facilitated.
Detailed description of the invention
Fig. 1 is the crystal circle structure schematic diagram for being covered with insulating protective layer.
Fig. 2 be CMP before be etched after crystal circle structure schematic diagram.
Fig. 3 is the schematic diagram of prominent angle tearing removing in existing CMP process.
Fig. 4 is that wafer scratches formation basic theory schematic diagram.
Fig. 5 is the application technical process schematic diagram.
Fig. 6 is the equipment schematic diagram of the application.
In figure: 1, grinding pad；2, foreign matter；3, wafer；4, the first grinding table；5, the second grinding table；6, third grinding table；7,
4th grinding table；8, assembly array area；9, peripheral region；10, insulating protective layer；11, prominent angle；12, grinding pad groove.
Specific embodiment
Hereinafter, certain exemplary embodiments have only been briefly described.As one skilled in the art will recognize that
Sample can modify described embodiment by a variety of different modes without departing from the spirit or scope of the application.
Therefore, attached drawing and description are considered essentially illustrative and non-limiting.
As shown in Figure 1, an insulating protective layer 10 can be generated in semiconductor memory capacitor electric pole plate processing procedure and coated
Entire capacitor, the alias in generating process, which causes insulating protective layer 10 to correspond to assembly array area 8 and peripheral region 9, to be generated
Difference of height, so CMP is needed to be planarized.In order to reduce the burden of CMP grinding, etch process can be first carried out before CMP, it will
SI semi-insulation protective layer 10 in assembly array area 8 removes, and effectively reduces the milling time of CMP, enters back into CMP later and completes to put down
The processing procedure of smoothization.In the prior art, CMP directly carries out the grinding of mechanochemistry using two steps, specifically, in chemical machine for the first time
It when tool is ground, is ground 100~120 seconds (s) under higher grinding rate using abrasive hardcoat pad, and grinding head revolving speed is 61
Rev/min (RPM), the revolving speed of grinding plate are 60RPM；Second of chemical mechanical grinding is directly carried out after cleaning, second of change
When learning mechanical lapping, 100~120s is ground under higher grinding rate using abrasive hardcoat pad, and grinding head revolving speed is
61RPM, the revolving speed of grinding plate are 60RPM.As shown in Fig. 2, due to etching after insulating protective layer 10 correspond to assembly array area 8
Edge be formed with prominent angle 11, such as directly adopt existing grinding method, as shown in figure 3, this protrude angle 11 in CMP grind when
Removing is easy to tear to generate big particle, if this particle, which is fallen on grinding pad 1, will cause the subsequent generation of wafer 3
Scratch defect.
The application provides a kind of method that improvement electric pole plate scratches in chemical mechanical milling tech, such as Fig. 5 and Fig. 6 institute
Show, including,
3 step of wafer is provided, wafer 3 is loaded on the loading platform of chemical-mechanical grinding device, the chemical mechanical grinding
Equipment further includes one first grinding table 4 and at least one second grinding table 5, and the wafer 3 has an assembly array area 8 and a phase
To sagging peripheral region 9, an insulating protective layer 10 covers the assembly array area 8 and the peripheral region 9, the insulating protective layer
10 edges for corresponding to the assembly array area 8 are formed with prominent angle 11, and the insulating protective layer 10 has at the prominent angle
11 the first height, the second height in the assembly array area 8 and the third height on the peripheral region 9, described the
One height is greater than second height, and second height is greater than the third height；
Slow mill step in advance, is implemented on first grinding table 4, utilizes the first grinding pad of first grinding table 4
Pre-grinding is carried out to the insulating protective layer 10, to remove the prominent angle 11, so that first height is high toward described second
Degree is close；
Main grinding steps for the first time, are implemented on second grinding table 5 and after the mill step slow in advance, utilize
The second grinding pad (being also referred to as the first abrasive hardcoat pad in this application) of second grinding table 5 is to the insulating protective layer
10 carry out main grinding for the first time, for removing the insulating protective layer 10 in the assembly array area 8 relative to the periphery
Excess thickness in area 9, so that first height and second height are close toward the third height；Preferably, described
The grinding rate of first abrasive hardcoat pad is between 50~70RPM.
Wherein, the hardness of first grinding pad (soft grinding pad) is less than the second grinding pad (first abrasive hardcoat
Pad) hardness, it is preferable that the Durometer A hardness of the first grinding pad between 40~60, second grinding pads Shore D between 52
~62；And the grinding rate of the mill step slow in advance be less than the grinding rate of the first time main grinding steps two/
One, it is preferable that in advance in slow mill step, the revolving speed of grinding head between 13~17 revs/min, the revolving speed of the first grinding table 4 between
12~16 revs/min, the time of pre-grinding is between 10~20s, including endpoint value, for the first time in main grinding steps, grinding head
Revolving speed is between 50~70 revs/min, and the revolving speed of the second grinding table 5 is between 50~70 revs/min.It is soft in slow mill step in advance
Matter grinding pad and lower grinding rate cooperate, so that prominent angle 11 is slowly abraded, rather than moment fracture generates larger
Grain object effectively reduces scratch caused by prominent 11 moment of angle tearing is snapped；After prominent angle 11 removes, then pass through main grinding for the first time
Step, so that the first height and the second height are close toward third height, to realize planarization.
Preferably, the porosity of the first grinding pad is greater than the porosity of the second grinding pad, the particle generated in grinding in this way
It can be accommodated by the first grinding pad, to promote grinding efficiency, reduce milling time.
Preferably, between the mill step slow in advance and the first time main grinding steps, the method also includes: in
Between grinding steps, be implemented on first grinding table 4, utilize the first grinding pad (soft grinding of first grinding table 4
Pad) insulating protective layer 10 is ground, the grinding rate of the intermediate grinding step is equivalent to the first time master and grinds
Grind the grinding rate of step.
As shown in figure 4, foreign matter 2 can be generated after grinding pad 1 and wafer 3 are ground, if the accumulation of foreign matter 2 is in the recessed of grinding pad 1
It is excluded not in time in slot 12, also further wafer 3 can be caused to scratch in subsequent grinding.It is therefore preferred that the chemistry machine
Tool milling apparatus further includes third grinding table 6, the method also includes: second of main grinding steps is implemented on the third and grinds
It grinds on platform 6 and after the first time main grinding steps, using the third grinding pad of the third grinding table 6 (in the application
In also referred to as the second abrasive hardcoat pad) second main grinding is carried out to the insulating protective layer 10, for assisting described in removal
Thickness of the insulating protective layer 10 in the assembly array area 8, so that second height is more nearly toward the third height,
Wherein the hardness of first grinding pad (soft grinding pad) is less than the hardness of the third grinding pad (the second abrasive hardcoat pad),
And the grinding rate of the mill step slow in advance is less than the half of the grinding rate of second of main grinding steps.It is preferred that
Ground, the Shore D of third grinding pad is in 52~62, second of main grinding steps, and the revolving speed of grinding head is between 50~70
Rev/min, the revolving speed of third grinding table 6 is between 50~70 revs/min.
Preferably, the chemical-mechanical grinding device further includes the 4th grinding table 7, the method also includes: third time is main
Grinding steps, are implemented on the 4th grinding table 7 and after the second main grinding steps, utilize the 4th grinding
The 4th grinding pad (being also referred to as third abrasive hardcoat pad in this application) of platform 7 carries out third time to the insulating protective layer 10
Main grinding, for realizing first height, consistent with the third height the planarization of second height, wherein described the
The hardness of one grinding pad is less than the hardness of the 4th grinding pad, and the grinding rate of the mill step slow in advance is less than described the
The half of the grinding rate of main grinding steps three times.Preferably, the Shore D of the 4th grinding pad is between 52~62,
Three times in main grinding steps, the revolving speed of grinding head between 50~70 revs/min, the revolving speed of the 4th grinding table 7 between 50~70 turns/
Minute；Main grinding steps, second main grinding steps, the milling time of the main grinding steps of third time are all identical and be greater than for the first time
The slow time for grinding pre-grinding in step in advance, it is preferable that main grinding for the first time, second of main grinding and main grinding for the third time
Milling time is between 60~70s, including endpoint value.In this way by multiple chemical mechanical lapping, each chemistry can be effectively reduced
The time of mechanical lapping reduces maximum bottleneck milling time, improves production efficiency；In addition, the time of each chemical mechanical grinding
Reduction foreign matter 2 that each chemical mechanical grinding can also be promoted to generate can exclude in time, be further reduced scratch.
In practical application, the porosity of the second grinding pad can be greater than the porosity of third grinding pad, third grinding pad
Porosity can be greater than the porosity of the 4th grinding pad, further to promote grinding efficiency, reduce milling time.
In four grindings, the calculation formula of grind clearance (MRR) is MRR=KPV, and wherein V is grinding rate；P is to grind
Pressure is ground, K is Princeton (Preston) coefficient；
Insulating protective layer 10 is removed in practical application, in the first time main grinding in assembly array area 8 relative to outer
The amount (grind clearance) for enclosing the excess thickness in area 9 can be greater than auxiliary removal insulating protective layer in second of main grinding
The amount (grind clearance) of 10 thickness in assembly array area 8, removal insulating protective layer 10 exists in the second main grinding
The amount (grind clearance) of thickness in assembly array area 8 can be greater than removed insulating protective layer in the main grinding of the third time
10 amount (grind clearance).
In order to realize the removal rate for quickly reaching target call, it is preferable that the trench depth of second grinding pad is big
In the trench depth of the third grinding pad, the trench depth of the third grinding pad is greater than the ditch groove depth of the 4th grinding pad
Degree.
When it is implemented, can be as follows:
Prominent 11 step of angle (slow mill step in advance) is gone, using the first grinding pad to depositing on the insulating protective layer 10 of wafer 3
One side (i.e. at the first height) at prominent angle 11 carries out pre-grinding, so that being gradually intended to described second at first height
At height, the revolving speed of grinding head is between 13~17RPM, and the revolving speed of the first grinding table 4 is between 12~16RPM, the soft grinding
The Durometer A hardness of (the first grinding pad) is padded between 40~60, beforehand research is consumed time between 10~20s, including endpoint value；The utilization
When soft grinding pad grinds the insulating protective layer 10 of the wafer 3, first that the lapping liquid used is pH value less than 6 is ground
Grinding fluid；Include abrasive grains of the solid content less than 2.5% in first lapping liquid, and utilizes zwitterionic surfactant pair
The insulating protective layer 10 of wafer 3 after pre-grinding carries out first time cleaning；Preferably, the matter of the zwitterionic surfactant
Score is measured between 2wt%~10wt%, zwitterionic surfactant can select betaine type amphoteric surfac-tant, amino
Acid type amphoteric surfactant；First lapping liquid can use hydrofluoric acid solution, and grind clearance can use formula
MRR=KPV is directly calculated；
Main grinding steps for the first time, using the first abrasive hardcoat pad (the second grinding pad) of the second grinding table 5 to described pre-
First the insulating protective layer 10 of the wafer 3 after slow mill carries out main grinding for the first time, and the revolving speed of grinding head is between 50~70RPM, and second
The revolving speed of grinding table 5 between 50~70RPM, the milling time of the first time main grinding between 60~70s, including endpoint value,
For removing insulating protective layer 10 in assembly array area 8 relative to the excess thickness on external zones 9, promote the first height and
Two height tend to third height；The Shore D of the first abrasive hardcoat pad (the second grinding pad) is between 52~62；Described
When primary main grinding, second lapping liquid of the lapping liquid used for pH value less than 6；It is small comprising solid content in second lapping liquid
The insulating protective layer 10 after main grinding for the first time is carried out in 2.0% abrasive grains, and using zwitterionic surfactant
Second of cleaning；Preferably, the mass fraction of the zwitterionic surfactant is between 2wt%~10wt%, amphoteric ion
Surfactant can select betaine type amphoteric surfac-tant, amino acid type amphoteric surfactant；Second grinding
Liquid can use hydrofluoric acid solution, and grind clearance can be directly calculated using formula MRR=KPV；
Second of main grinding steps, it is right using the second abrasive hardcoat pad (the i.e. described third grinding pad) of third grinding table 6
The insulating protective layer 10 of the wafer 3 carries out second of main grinding, and the revolving speed of grinding head is between 50~70RPM, third grinding table 6
Revolving speed between 50~70RPM, the milling time of second of main grinding is between 60~70s, including endpoint value, for assisting
Thickness of the insulating protective layer 10 in assembly array area 8 is removed, so that the second height is more nearly toward third height；Described second
The Shore D of abrasive hardcoat pad (third grinding pad) is between 52~62；When the second main grinding, the lapping liquid that uses for
Third lapping liquid of the pH value less than 6；Include abrasive grains of the solid content less than 1.5% in the third lapping liquid, and utilizes two
Property ionic surface active agent third time cleaning is carried out to the insulating protective layer 10 after second main grinding；Preferably, the both sexes
The mass fraction of ionic surface active agent can select betaine type between 2wt%~10wt%, zwitterionic surfactant
Amphoteric surfactant, amino acid type amphoteric surfactant；The third lapping liquid can use hydrofluoric acid solution, grinding
Removal rate can be directly calculated using formula MRR=KPV；
Main grinding steps for the third time, using the third abrasive hardcoat pad (the 4th grinding pad) of the 4th grinding table 7 to the crystalline substance
The insulating protective layer 10 of circle 3 carries out the main grinding of third time, and the revolving speed of grinding head is between 50~70RPM, the revolving speed of the 4th grinding table 7
Between 50~70RPM, for realizing the planarization of 3 insulating protective layer 10 of wafer, i.e., the first height, the second height and third
The consistent planarization of height；The milling time of the main grinding of third time is between 60~70s, including endpoint value；The third is hard
The Shore D of matter grinding pad is between 52~62；When the main grinding of the third time, the lapping liquid used is pH value less than 6
Four lapping liquids；Include abrasive grains of the solid content less than 0.5% in 4th lapping liquid, and utilizes amphoteric ion surface-active
Agent carries out third time cleaning to the insulating protective layer 10 after the main grinding of third time；Preferably, the zwitterionic surfactant
Mass fraction between 2wt%~10wt%, zwitterionic surfactant can select betaine type amphoteric surfac-tant,
Amino acid type amphoteric surfactant；4th lapping liquid can use hydrofluoric acid solution, and grind clearance can use
Formula MRR=KPV is directly calculated.
Correspondingly, the application also provides a kind of equipment that improvement electric pole plate scratches in chemical mechanical milling tech, such as
Shown in Fig. 6, including one first grinding table 4 and at least one second grinding table 5 being sequentially successively circumferentially arranged；
First grinding pad is installed on first grinding table 4；Second grinding pad is installed on second grinding table 5；
Wherein, the hardness of first grinding pad is less than the hardness of second grinding pad；
The equipment further includes grinding head rotating mechanism, and multiple grinding heads, institute are provided on the grinding head rotating mechanism
Grinding head is stated for clamping wafer 3 to be ground, and under the drive of the grinding head rotating mechanism, rotation to corresponding grinding table
On, and apply pressure to first grinding pad on corresponding grinding table and second grinding pad.
In practical application, one of grinding head can first clamp wafer 3 to be ground, in the band of grinding head rotating mechanism
Under dynamic, in rotation to the first grinding table 4, and the first grinding pad on the first grinding table 4 is applied pressure to, carries out pre-grinding, with
Abrade prominent angle 11.Then the grinding head continues to clamp the wafer 3, under the drive of grinding head rotating mechanism, rotation to second
On grinding table 5, and the second grinding pad on the second grinding table 5 is applied pressure to, carries out main grinding for the first time, it is flat to realize
Change, while another grinding head clamps another wafer 3 to be ground, under the drive of grinding head rotating mechanism, rotation to first is ground
It grinds on platform 4, and applies pressure to the first grinding pad on the first grinding table 4, carry out slow mill step in advance.It is understood that
Multiple grinding heads can repeat the above process carry out cycle operation under the drive of grinding head rotating mechanism.It in this way can not only be effective
Scratch caused by prominent 11 moment of angle tearing is snapped is reduced, and production efficiency can be improved.
Preferably, above equipment further includes third grinding table 6, first grinding table 4, second grinding table 5, described
Third grinding table 6 is successively circumferentially arranged, and third grinding pad is equipped on the third grinding table 6, first grinding pad
Hardness is less than the hardness of the third grinding pad；The grinding head is also used to clamp the wafer 3 to be ground, and grinds described
Under the drive of bistrique rotating mechanism, in rotation to third grinding table 6, and the third grinding pad is applied pressure to.Preferably, on
Stating equipment further includes the 4th grinding table 7, first grinding table 4, second grinding table 5, the third grinding table 6, described
4th grinding table 7 is successively circumferentially arranged, and the 4th grinding pad is equipped on the 4th grinding table 7, first grinding pad
Hardness is less than the hardness of the 4th grinding pad；The grinding head is also used to clamp the wafer 3 to be ground, and grinds described
Under the drive of bistrique rotating mechanism, in rotation to the 4th grinding table 7, and the 4th grinding pad is applied pressure to.
In practical application, grinding head clamps wafer 3 to be ground, after main grinding for the first time is completed on the second grinding table 5,
The grinding head can also clamp the wafer 3 and successively carry out second of main grinding respectively on third grinding table 6 and the 4th grinding table 7
It, to reduce maximum bottleneck milling time, is further mentioned with the main grinding of third time with reducing the time of each chemical mechanical grinding
High efficiency.And the foreign matter that the reduction of the time of each chemical mechanical grinding can also promote each chemical mechanical grinding to generate
2 can exclude in time, be further reduced scratch.
Preferably, above equipment further includes the first lapping liquid gatherer and the first cleaning device, first lapping liquid
Gatherer is set on first grinding table 4, for providing the first lapping liquid in first grinding pad；Described first
Cleaning device is set on first grinding table 4, is carried out for providing zwitterionic surfactant to the wafer 3 after grinding
Cleaning；The equipment further includes the second lapping liquid gatherer and the second cleaning device, and the second lapping liquid gatherer is set
It is placed on second grinding table 5, for providing the second lapping liquid in second grinding pad；Second cleaning device is set
It is placed on second grinding table 5, the wafer 3 after grinding is cleaned for providing zwitterionic surfactant.
Preferably, above equipment further includes third lapping liquid gatherer and third cleaning device, the third lapping liquid
Gatherer is set on the third grinding table 6, for providing third lapping liquid in the third grinding pad；The third
Cleaning device is set on the third grinding table 6, is carried out for providing zwitterionic surfactant to the wafer 3 after grinding
Cleaning.
Preferably, above equipment further includes the 4th lapping liquid gatherer and the 4th cleaning device, the 4th lapping liquid
Gatherer is set on the 4th grinding table 7, for providing the 4th lapping liquid in the 4th grinding pad；Described 4th
Cleaning device is set on the 4th grinding table 7, is carried out for providing zwitterionic surfactant to the wafer 3 after grinding
Cleaning.
Preferably, the grinding pressure range that corresponding grinding head applies on first grinding table 4 is between 3~4psi, packet
Include endpoint value；The revolving speed of corresponding grinding head is between 13~17RPM, including endpoint value on first grinding table 4；Described first
The revolving speed of grinding table 4 is between 12~16RPM, including endpoint value；The milling time of first grinding table 4 is between 10~20s, packet
Include endpoint value；
The grinding pressure range that corresponding grinding head applies on second grinding table 5 is between 3~6psi, including endpoint
Value；The revolving speed of corresponding grinding head is between 51~71RPM, including endpoint value on second grinding table 5；Second grinding table
5 revolving speed is between 50~70RPM, including endpoint value；The milling time of second grinding table 5 is between 60~70s, including endpoint
Value.
Preferably, the grinding pressure range that corresponding grinding head applies on the third grinding table 6 is between 3~5psi, packet
Include endpoint value；The revolving speed of corresponding grinding head is between 51~71RPM, including endpoint value on the third grinding table 6；The third
The revolving speed of grinding table 6 is between 50~70RPM, including endpoint value；The milling time of the third grinding table 6 is between 60~70s, packet
Include endpoint value.
Preferably, the grinding pressure range that corresponding grinding head applies on the 4th grinding table 7 is between 3~4psi, packet
Include endpoint value；The revolving speed of corresponding grinding head is between 51~71RPM, including endpoint value on 4th grinding table 7；Described 4th
The revolving speed of grinding table 7 is between 50~70RPM, including endpoint value；The milling time of 4th grinding table 7 is between 60~70s, packet
Include endpoint value.
The above is only embodiments of the present invention, and the description thereof is more specific and detailed, and but it cannot be understood as right
The limitation of the invention patent range.It should be pointed out that for those of ordinary skill in the art, not departing from the present invention
Under the premise of design, various modifications and improvements can be made, these are all belonged to the scope of protection of the present invention.
Claims (25)
1. a kind of method for improving electric pole plate and being scratched in chemical mechanical milling tech, which is characterized in that including,
Wafer step is provided, wafer load is on the loading platform of chemical-mechanical grinding device, and the chemical-mechanical grinding device is also
Including one first grinding table and at least one second grinding table, the wafer has an assembly array area and a relatively sagging week
Border area, an insulating protective layer cover the assembly array area and the peripheral region, and the insulating protective layer corresponds to the component
The edge of array area is formed with prominent angle, and the insulating protective layer has in first height at the prominent angle, in the component
The second height on array area and the third height on the peripheral region, first height are greater than second height, institute
The second height is stated greater than the third height；
Slow mill step in advance, is implemented on first grinding table, using the first grinding pad of first grinding table to described
Insulating protective layer carries out pre-grinding, to remove the prominent angle, so that first height is close toward second height；
Main grinding steps for the first time, are implemented on second grinding table and after the mill step slow in advance, using described
Second grinding pad of the second grinding table carries out main grinding for the first time to the insulating protective layer, for removing the insulating protective layer
Relative to the excess thickness on the external zones in the assembly array area, so that first height and second height
It is close toward the third height；
Wherein, the hardness of first grinding pad is less than the hardness of second grinding pad, and the slow mill step in advance is ground
Grind the half that rate is less than the grinding rate of the first time main grinding steps.
2. the method according to claim 1, wherein in the mill step slow in advance and the first time main grinding
Between step, the method also includes: intermediate grinding step is implemented on first grinding table, utilizes first grinding
First grinding pad of platform grinds the insulating protective layer, and the grinding rate of the intermediate grinding step is equivalent to described
The grinding rate of primary main grinding steps.
3. the method according to claim 1, wherein the chemical-mechanical grinding device further includes third grinding
Platform, the method also includes: second of main grinding steps is implemented on the third grinding table and in the first time main grinding
After step, second of main grinding is carried out to the insulating protective layer using the third grinding pad of the third grinding table, is used for
Auxiliary removes the thickness of the insulating protective layer in the assembly array area, so that second height is toward the third height
It is more nearly, wherein the hardness of first grinding pad is less than the hardness of the third grinding pad, and the mill step slow in advance
Grinding rate be less than the second main grinding steps grinding rate half.
4. according to the method described in claim 3, it is characterized in that, the chemical-mechanical grinding device further includes the 4th grinding
Platform, the method also includes: the main grinding steps of third time are implemented on the 4th grinding table and in second of main grinding
After step, the main grinding of third time is carried out to the insulating protective layer using the 4th grinding pad of the 4th grinding table, is used for
Realize first height, second height planarization consistent with the third height, wherein first grinding pad
Hardness is less than the hardness of the 4th grinding pad, and the grinding rate of the mill step slow in advance is less than the main grinding of the third time
The half of the grinding rate of step.
5. according to the method described in claim 4, it is characterized in that, the first time main grinding steps, second of master are ground
Grind step, the milling time of the main grinding steps of the third time it is all identical and be greater than pre-grinding in the mill step slow in advance when
Between.
6. according to the method described in claim 4, it is characterized in that, the Durometer A hardness of first grinding pad between 40~60,
The Shore D of second grinding pad, the third grinding pad and the 4th grinding pad is between 52~62.
7. the method according to claim 1, wherein in the mill step slow in advance, the revolving speed of grinding head between
13~17 revs/min, the revolving speed of first grinding table is between 12~16 revs/min.
8. according to the method described in claim 4, it is characterized in that, the first time main grinding steps, second of master are ground
It grinds in step and the main grinding steps of the third time, the revolving speed of grinding head is between 50~70 revs/min, second grinding
The revolving speed of platform, the third grinding table and the 4th grinding table is between 50~70 revs/min.
9. the method according to claim 1, wherein in the mill step slow in advance, time of pre-grinding between
10~20s, including endpoint value.
10. according to the method described in claim 4, it is characterized in that, the first time main grinding, the second main grinding with
And the milling time of the main grinding of third time is between 60~70s, including endpoint value.
11. according to the method described in claim 4, it is characterized in that, the trench depth of second grinding pad is greater than described the
The trench depth of three grinding pads, the trench depth of the third grinding pad are greater than the trench depth of the 4th grinding pad.
12. the method according to claim 1, wherein used lapping liquid is in the mill step slow in advance
First lapping liquid of the pH value less than 6 includes abrasive grains of the solid content less than 2.5% in first lapping liquid；And utilize two
Property ionic surface active agent to after pre-grinding insulating protective layer carry out first time cleaning；
When first time main grinding, used lapping liquid is second lapping liquid of the pH value less than 6, in second lapping liquid
Abrasive grains comprising solid content less than 2.0%, and using zwitterionic surfactant to the insulation after main grinding for the first time
Protective layer carries out second and cleans.
13. according to the method described in claim 3, it is characterized in that, used lapping liquid is when the second main grinding
Third lapping liquid of the pH value less than 6 includes abrasive grains of the solid content less than 1.5% in the third lapping liquid, and utilizes two
Property ionic surface active agent third time cleaning is carried out to the insulating protective layer after second main grinding.
14. according to the method described in claim 4, it is characterized in that, used lapping liquid is when the main grinding of the third time
Fourth lapping liquid of the pH value less than 6；It include abrasive grains of the solid content less than 0.5% in 4th lapping liquid；And utilize two
Property ionic surface active agent the 4th cleaning is carried out to the insulating protective layer after the main grinding of third time.
15. method described in any one of 2 to 14 according to claim 1, which is characterized in that the zwitterionic surfactant
Mass fraction between 2wt%~10wt%.
16. the method according to claim 1, wherein the porosity of first grinding pad is greater than described second
The porosity of grinding pad.
17. a kind of improve the equipment that scratches in chemical mechanical milling tech of electric pole plate, which is characterized in that including sequentially successively
One first grinding table and at least one second grinding table being circumferentially arranged；
The first grinding pad is installed on first grinding table；The second grinding pad is installed on second grinding table；Wherein, institute
The hardness for stating the first grinding pad is less than the hardness of second grinding pad；
The equipment further includes grinding head rotating mechanism, and multiple grinding heads are provided on the grinding head rotating mechanism, described to grind
Bistrique is rotated for clamping wafer to be ground, and under the drive of the grinding head rotating mechanism to corresponding grinding table, and
Apply pressure to first grinding pad and second grinding pad on corresponding grinding table.
18. equipment according to claim 17, which is characterized in that it further include third grinding table, first grinding table, institute
State the second grinding table, the third grinding table is successively circumferentially arranged, third grinding pad, institute are installed on the third grinding table
The hardness for stating the first grinding pad is less than the hardness of the third grinding pad；The grinding head is also used to clamp the crystalline substance to be ground
Circle, and under the drive of the grinding head rotating mechanism, in rotation to third grinding table, and apply pressure to the third grinding
Pad.
19. equipment according to claim 18, which is characterized in that it further include the 4th grinding table, first grinding table, institute
It states the second grinding table, the third grinding table, the 4th grinding table to be successively circumferentially arranged, be installed on the 4th grinding table
There is the 4th grinding pad, the hardness of first grinding pad is less than the hardness of the 4th grinding pad；The grinding head is also used to press from both sides
The wafer to be ground is held, and under the drive of the grinding head rotating mechanism, in rotation to the 4th grinding table, and applies pressure
Power is to the 4th grinding pad.
20. equipment according to claim 17, which is characterized in that further include the first lapping liquid gatherer and the first cleaning
Device, the first lapping liquid gatherer are set on first grinding table, for providing the first lapping liquid in described the
On one grinding pad；First cleaning device is set on first grinding table, for providing zwitterionic surfactant
Wafer after grinding is cleaned；
The equipment further includes the second lapping liquid gatherer and the second cleaning device, the second lapping liquid gatherer setting
In on second grinding table, for providing the second lapping liquid in second grinding pad；The second cleaning device setting
In on second grinding table, the wafer after grinding is cleaned for providing zwitterionic surfactant.
21. equipment according to claim 18, which is characterized in that further include that third lapping liquid gatherer and third are cleaned
Device, the third lapping liquid gatherer are set on the third grinding table, for providing third lapping liquid in described
On three grinding pads；The third cleaning device is set on the third grinding table, for providing zwitterionic surfactant
Wafer after grinding is cleaned.
22. equipment according to claim 19, which is characterized in that further include the 4th lapping liquid gatherer and the 4th cleaning
Device, the 4th lapping liquid gatherer are set on the 4th grinding table, for providing the 4th lapping liquid in described the
On four grinding pads；4th cleaning device is set on the 4th grinding table, for providing zwitterionic surfactant
Wafer after grinding is cleaned.
23. equipment according to claim 17, which is characterized in that corresponding grinding head applies on first grinding table
Grinding pressure range is between 3~4psi, including endpoint value；On first grinding table revolving speed of corresponding grinding head between 13~
17RPM, including endpoint value；The revolving speed of first grinding table is between 12~16RPM, including endpoint value；First grinding table
Milling time between 10~20s, including endpoint value；
The grinding pressure range that corresponding grinding head applies on second grinding table is between 3~6psi, including endpoint value；It is described
The revolving speed of corresponding grinding head is between 51~71RPM, including endpoint value on second grinding table；The revolving speed of second grinding table is situated between
In 50~70RPM, including endpoint value；The milling time of second grinding table is between 60~70s, including endpoint value.
24. equipment according to claim 18, which is characterized in that corresponding grinding head applies on the third grinding table
Grinding pressure range is between 3~5psi, including endpoint value；On the third grinding table revolving speed of corresponding grinding head between 51~
71RPM, including endpoint value；The revolving speed of the third grinding table is between 50~70RPM, including endpoint value；The third grinding table
Milling time between 60~70s, including endpoint value.
25. equipment according to claim 19, which is characterized in that corresponding grinding head applies on the 4th grinding table
Grinding pressure range is between 3~4psi, including endpoint value；On 4th grinding table revolving speed of corresponding grinding head between 51~
71RPM, including endpoint value；The revolving speed of 4th grinding table is between 50~70RPM, including endpoint value；4th grinding table
Milling time between 60~70s, including endpoint value.
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| CN201810228900 | 2018-03-20 | ||
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| CN201810380558.5A Pending CN110303424A (en) | 2018-03-20 | 2018-04-25 | Improve the method and apparatus that electric pole plate scratches in chemical mechanical milling tech |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111805413A (en) * | 2020-07-23 | 2020-10-23 | 中国科学院微电子研究所 | Chemical mechanical polishing method |
| CN113299540A (en) * | 2021-07-27 | 2021-08-24 | 江苏茂硕新材料科技有限公司 | Protection method and device for semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN208514306U (en) * | 2018-03-20 | 2019-02-19 | 长鑫存储技术有限公司 | Improve the equipment that electric pole plate scratches in chemical mechanical milling tech |
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