CN110299350B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN110299350B
CN110299350B CN201810841141.4A CN201810841141A CN110299350B CN 110299350 B CN110299350 B CN 110299350B CN 201810841141 A CN201810841141 A CN 201810841141A CN 110299350 B CN110299350 B CN 110299350B
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metal terminal
terminal
power terminal
metal
semiconductor device
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CN201810841141.4A
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CN110299350A (zh
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高桥亘
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Abstract

实施方式的半导体装置具备：板状的第1金属端子；板状的第2金属端子，与第1金属端子对置地设置；树脂层，设于第1金属端子与第2金属端子之间；以及半导体芯片，具有电连接于第1金属端子的第1上部电极和电连接于第2金属端子的第1下部电极，第1金属端子的端部的第1金属端子与第2金属端子之间的第1距离，比第1金属端子的端部的内侧的部分的第1金属端子与第2金属端子之间的第2距离大。

Description

半导体装置
相关申请
本申请享受以日本专利申请2018－53683号(申请日：2018年3月21日)为基础申请的优先权。本申请通过参照该基础申请而包含基础申请的全部内容。
技术领域
实施方式涉及半导体装置。
背景技术
在功率半导体模块中，例如在金属基板之上将绝缘层夹在之间地安装多个功率半导体芯片。功率半导体芯片例如是IGBT(Insulated Gate Bipolar Transistor)、MOSFET(Metal Oxide Field Effect Transistor)或者二极管。
在功率半导体模块中，若布线的电感(以下：记载为电感)较大，则在高速进行开关的截止动作时，产生被称作浪涌电压的过电压。若考虑浪涌电压将半导体芯片的耐压设计为较高，则会产生半导体芯片的导通电阻增大、导通损失变大这一问题。另外，虽然通过加长截止动作的时间，能够减少浪涌电压，但会产生开关损失变大这一问题。因此，期望减少功率半导体模块的电感。
发明内容
实施方式提供能够减少电感的半导体装置。
实施方式的半导体装置具备：板状的第1金属端子；板状的第2金属端子，与第1金属端子对置地设置；树脂层，设于第1金属端子与第2金属端子之间；以及半导体芯片，具有电连接于第1金属端子的第1上部电极和电连接于第2金属端子的第1下部电极，第1金属端子的与电连接于半导体芯片的一侧相反的一侧的端部处的、第1金属端子与第2金属端子之间的第1距离，比第1金属端子的从端部朝向半导体芯片的方向上所存在的部分处的、第1金属端子与第2金属端子之间的第2距离大。
另外，实施方式的半导体装置具备：基板；第1金属层，设于基板之上；第2金属层，设于基板之上；第1半导体芯片，设于第1金属层之上，具有第1上部电极、第1下部电极、以及第1栅极电极；第2半导体芯片，设于第2金属层之上，具有第2上部电极、第2下部电极、以及第2栅极电极；板状的第1金属端子，电连接于第1上部电极；板状的第2金属端子，与第1金属端子对置地设置，电连接于第2下部电极；第3金属端子，电连接于第1下部电极以及第2上部电极；第1栅极端子，电连接于第1栅极电极；第2栅极端子，电连接于第2栅极电极；树脂层，设于第1金属端子与上述第2金属端子之间，第1金属端子的与电连接于第1半导体芯片的一侧相反的一侧的端部处的、第1金属端子与第2金属端子之间的第1距离，比第1金属端子的从端部朝向第1半导体芯片的方向上所存在的部分处的、第1金属端子与第2金属端子之间的第2距离大。
附图说明
图1A、1B是第1实施方式的半导体装置的示意俯视图。
图2是第1实施方式的半导体装置的示意剖面图。
图3是第1实施方式的半导体装置的等效电路图。
图4是第1实施方式的半导体装置的一部分的放大示意图。
图5是第1实施方式的作用以及效果的说明图。
图6是第1实施方式的作用以及效果的说明图。
图7是第2实施方式的半导体装置的一部分的放大示意图。
具体实施方式
关于本说明书中相同或者类似的部件，有时标注相同的附图标记而省略重复的说明。
在本说明书中，为了示出部件等的位置关系，有时将附图的上方向表述为“上”，将附图的下方向表述为“下”。在本说明书中，“上、”“下”的概念并非必须是表示与重力的朝向的关系的术语。
(第1实施方式)
图1A、1B是第1实施方式的半导体装置的示意俯视图。图2是第1实施方式的半导体装置的示意剖面图。图3是第1实施方式的半导体装置的等效电路图。
第1实施方式的半导体装置是功率半导体模块100。如图3所示，第1实施方式的功率半导体模块100以串联的方式连接有2个MOSFET。第1实施方式的功率半导体模块是能够由1个模块构成半桥电路的、所谓的“2in1”类型的模块。例如，能够通过使用三个第1实施方式的功率半导体模块来构成3相逆变电路。
第1实施方式的功率半导体模块100具备树脂壳体10、盖12、N电力端子14(第1金属端子)、P电力端子16(第2金属端子)、AC输出端子18(第3金属端子)、栅极端子20a(第1栅极端子)、栅极端子20b(第2栅极端子)、金属基板22(基板)、树脂绝缘层24、第1金属层26、第2金属层28、第1栅极金属层30、第2栅极金属层32、第1源极金属层34、第2源极金属层36、MOSFET38(半导体芯片、第1半导体芯片)、MOSFET40(第2半导体芯片)、接合线42、硅凝胶44、端子间树脂层50(树脂层)。
图1A是从功率半导体模块100中除去了盖12以及硅凝胶44的状态的俯视图。另外，图1B是从功率半导体模块100中除去了盖12、N电力端子14(第1金属端子)、P电力端子16(第2金属端子)、AC输出端子18(第3金属端子)、以及硅凝胶44后的状态的俯视图。
图2是图1A所示的AA’方向的剖面图。
金属基板22(基板)例如是铜。例如在将半导体模块安装于产品时，在金属基板22的背面连接有未图示的散热板。
树脂壳体10设置在金属基板22的周围。在树脂壳体10之上设有盖12。另外，在半导体模块的内部，作为密封材料填充有硅凝胶44。树脂壳体10、金属基板22、盖12、以及硅凝胶44具有对半导体模块内的部件进行保护或者绝缘的功能。
在树脂壳体10的上部设有N电力端子14、P电力端子16、AC输出端子18、栅极端子20a、栅极端子20b。P电力端子16被从外部施加例如正电压。N电力端子14被从外部施加例如负电压。
N电力端子14、P电力端子16、AC输出端子18、栅极端子20a、栅极端子20b是金属。N电力端子14、P电力端子16、AC输出端子18、栅极端子20a、栅极端子20b例如是铜或者铜合金。
N电力端子14以及P电力端子16为板状。P电力端子16的至少一部分与N电力端子14的至少一部分对置。N电力端子14与P电力端子16具有平行地对置的区域。换言之，N电力端子14的一部分与P电力端子16的一部分是平行平板。
端子间树脂层50设于N电力端子14与P电力端子16之间。端子间树脂层50具有使N电力端子14与P电力端子16绝缘的功能。端子间树脂层50例如是热塑性树脂。端子间树脂层50例如是环氧树脂。
树脂绝缘层24设于金属基板22之上。树脂绝缘层24具有使金属基板22、第1金属层26以及第2金属层28绝缘的功能。树脂绝缘层24在树脂中含有例如由氮化硼等形成的热传导率高的填料。
第1金属层26以及第2金属层28设于树脂绝缘层24上。第1金属层26与第2金属层28设于大致同一平面。第1金属层26以及第2金属层28例如是铜。
P电力端子16连接于第2金属层28。P电力端子16例如使用焊料、Ag纳米粒子连接于第2金属层28。
栅极金属层30以及栅极金属层32设于树脂绝缘层24上。
第1源极金属层34以及第2源极金属层36设于树脂绝缘层24上。N电力端子14连接于第1源极金属层34。第1源极金属层34具有将半导体芯片与N电力端子14连接的功能。N电力端子14例如使用焊料、Ag纳米粒子连接于第1源极金属层34。
第2源极金属层36具有将半导体芯片与AC输出端子18连接的功能。
MOSFET38设于第1金属层26之上。MOSFET38例如使用焊料和/或Ag纳米粒子连接于第1金属层26。
MOSFET38在上表面具有源极电极38a(第1上部电极)以及栅极电极38c(第1栅极电极)，在下表面具有漏极电极38b(第1下部电极)。源极电极38a与N电力端子14电连接。漏极电极38b与第1金属层26电连接。栅极电极38c使用栅极金属层30以及接合线42连接于栅极端子20a。接合线42例如是铝线。
MOSFET40设于第2金属层28之上。MOSFET38例如使用焊料和/或Ag纳米粒子连接于第1金属层26。
MOSFET40在上表面具有源极电极40a(第2上部电极)以及栅极电极40c(第2栅极电极)，在下表面具有漏极电极40b(第2下部电极)。源极电极40a与AC输出端子18电连接。漏极电极40b与第2金属层28电连接。栅极电极40c使用栅极金属层32以及接合线42连接于栅极端子20b。
MOSFET38的漏极电极38b(第1下部电极)在中间经由MOSFET40连接于P电力端子16。漏极电极38b电连接于AC输出端子18。
MOSFET38、MOSFET40例如是使用了碳化硅(SiC)或者硅(Si)的半导体芯片。
图4是第1实施方式的半导体装置的一部分的放大示意图。图4是由图2的虚线包围的区域的放大图。图4中省略了端子间树脂层50的图示。
N电力端子14的端部(图4中的E1)处的N电力端子14与P电力端子16之间的第1距离(图4中的d1)，比N电力端子14的端部E1的内侧的部分(图4中的X)处的N电力端子14与P电力端子16之间的第2距离(图4中的d2)大。N电力端子14的端部E1是与电连接于MOSFET40的一侧相反的一侧的端部。另外，N电力端子14的端部E1的内侧的部分位于从N电力端子14的端部E1朝向MOSFET40的方向。此外，P电力端子16的端部(图4中的E2)位于隔着端子间树脂层50而与N电力端子14的端部E1对置的位置。P电力端子16的端部E2与N电力端子14的端部E1相向。
例如，在从图4中的X至N电力端子14的端部E1以及P电力端子16的端部E2的范围内，N电力端子14的厚度与P电力端子16的厚度在公差的范围内是相同的。
第2距离d2例如是0.01mm以上且0.5mm以下。
第1距离d1例如是第2距离d2的1.2倍以上且2.0倍以下。第1距离d1例如是0.012mm以上且1.0mm以下。
N电力端子14的厚度(图4中的t1)例如是0.1mm以上且1.0mm以下。P电力端子16的厚度(图4中的t2)例如是0.1mm以上且1.0mm以下。
从N电力端子14的端部E1起到N电力端子14与P电力端子16之间的距离成为大致恒定的位置(图4中的Y)为止的第3距离d3，例如是N电力端子14的厚度的一半。换言之，从N电力端子14与P电力端子16之间的距离开始变宽的位置Y起到N电力端子14的端部E1为止的距离d3，例如是N电力端子14的厚度的一半。第3距离d3例如是0.05mm以上且0.5mm以下。
接下来，对第1实施方式的半导体装置的作用以及效果进行说明。
在功率半导体模块中，若电感较大，则在高速进行开关的截止动作时，产生被称作浪涌电压的过电压。若考虑浪涌电压而将半导体芯片的耐压较高地设计，则会产生半导体芯片的导通电阻增大且导通损失变大这一问题。另外，虽然能够通过加长截止动作的时间来减少浪涌电压，但会产生开关损失变大这一问题。因此，期望减少功率半导体模块的电感。
图5是第1实施方式的作用以及效果的说明图。图5与图2所示的剖面图对应。
第1实施方式的功率半导体模块100的N电力端子14与P电力端子16的一部分成为平行平板。在N电力端子14与P电力端子16成为平行平板的区域(以下为平行平板区域)，在N电力端子14与P电力端子16之间，为了绝缘而设置端子间树脂层50。
电流从功率半导体模块100的外部通过P电力端子16而流入，并通过MOSFET40以及MOSFET38从N电力端子14流出。在图5中用白箭头示出流经N电力端子14与P电力端子16的电流的朝向。如图5所示，在平行平板区域，流经N电力端子14与P电力端子16的电流的朝向成为反向。
布线的电感中存在基于自感应的自感与基于相互感应的互感。布线的电感成为自感与互感之和。例如，N电力端子14与P电力端子16的电感具有N电力端子14和P电力端子16各自的自感、以及伴随着N电力端子14与P电力端子16的相互感应的互感。
第1实施方式的功率半导体模块100，在N电力端子14与P电力端子16的平行平板区域中，电流反向地流动。因此，互感向抵消自感的方向作用。因此，N电力端子14与P电力端子16的电感减少。
N电力端子14与P电力端子16的电感是功率半导体模块100的电感的一部分。因此，功率半导体模块100的电感减少。
N电力端子14与P电力端子16之间的距离越短，N电力端子14与P电力端子16的平行平板区域的电感越大。因此，出于使功率半导体模块100的电感减少的观点，优选的是极力减小N电力端子14与P电力端子16之间的距离。
例如，具有平行平板区域的N电力端子14与P电力端子16是通过预先模制成形出2个板状的金属部件而制造。在模制成形时，模制树脂流入N电力端子14与P电力端子16之间，形成端子间树脂层50。
若为了减小平行平板区域的电感而减小N电力端子14与P电力端子16之间的距离，则在模制成形时，担心N电力端子14与P电力端子16之间未被充分填充模制树脂，产生N电力端子14与P电力端子16之间的绝缘不良。例如，产生模制树脂的未填充(孔穴)，产生绝缘不良。
图6是第1实施方式的作用以及效果的说明图。
例如，在模制成形时，从N电力端子14与P电力端子16的端部如图6所示那样流入模制树脂。N电力端子14与P电力端子16的端部成为模制树脂的入口。通过N电力端子14与P电力端子16的端部扩宽，使得N电力端子14以及P电力端子16和模制树脂之间的滑动电阻变小。滑动电阻指的是物体在流动时产生的电阻。
由于滑动电阻变小，使得模制树脂容易流入N电力端子14与P电力端子16之间，将会充分地填充模制树脂。模制树脂的填充性提高。因此，能够抑制N电力端子14与P电力端子16之间的绝缘不良。由此，能够减小N电力端子14与P电力端子16之间的距离。
此外，在N电力端子14与P电力端子16的端部成为模制树脂的出口的情况下，也同样是滑动电阻变小，模制树脂容易流出。因此，在该情况下，也有助于N电力端子14与P电力端子16之间的模制树脂的填充性的提高。
此外，制造N电力端子14与P电力端子16的端部产生了扩宽的形状时，例如有以下的方法。在由金属板形成N电力端子14、P电力端子16时，金属板例如用模具冲切而切断。此时，在冲切面产生金属板的塌边(日语：ダレ)。即，在N电力端子14、P电力端子16的切断部即端部，产生塌边。
在模制成形时，N电力端子14的塌边和P电力端子16的塌边以朝向相反方向的方式对置，N电力端子14与P电力端子16的端部扩展。由此，制造出N电力端子14与P电力端子16的端部产生了扩宽的形状。
第2距离d2优选的是0.01mm以上且0.5mm以下。若低于上述范围，则担心产生绝缘不良。若超过上述范围，则担心电感的减少效果变得不充分。
第1距离d1优选的是第2距离d2的1.2倍以上且2.0倍以下。若低于上述范围，则担心滑动电阻的减少效果变得不充分。超过上述范围的话，加工上较困难。
第3距离d3优选的是0.05mm以上且0.5mm以下。若低于上述范围，则担心滑动电阻的减少效果变得不充分。在超过上述范围的情况下，也担心滑动电阻的减少效果变得不充分。
以上，采用第1实施方式，通过减小N电力端子14与P电力端子16之间的距离，能够实现可减少电感的功率半导体模块100。
(第2实施方式)
第2实施方式的半导体装置在第1金属端子的端部的形状不同这一点上与第1实施方式不同。以下，对于与第1实施方式重复的内容，省略一部分表述。
图7是第2实施方式的半导体装置的一部分的放大示意图。图7是相当于第1实施方式的图4的图。在图7中省略了端子间树脂层50的图示。
N电力端子14的端部(图7中的E1)处的N电力端子14与P电力端子16之间的第1距离(图7中的d1)，比N电力端子14的端部E1的内侧的部分(图7中的X)处的N电力端子14与P电力端子16之间的第2距离(图7中的d2)大。此外，P电力端子16的端部(图7中的E2)位于隔着端子间树脂层50而与N电力端子14的端部E1对置的位置。
N电力端子14的外面(下表面)以及P电力端子16的外面(上表面)是平坦的。N电力端子14的厚度朝向端部E1而变薄。P电力端子16的厚度朝向端部E2而变薄。
此外，图7那样的N电力端子14与P电力端子16的端部产生了扩宽的形状例如能够通过在模制成形前选择性地削除N电力端子14与P电力端子16的端部的内侧来制造。
以上，采用第2实施方式，与第1实施方式相同，通过减小N电力端子14与P电力端子16之间的距离，能够实现可减少电感的功率半导体模块。
在第1以及第2实施方式中，以使用MOSFET作为半导体芯片的情况为例进行了说明，但半导体芯片并不限定于这些。例如也能够应用IGBT、SBD(Shottky Barrier Diode)、PIN二极管等其他的晶体管、二极管。另外，也能够应用晶体管与二极管的组合。
虽然说明了本发明的几个实施方式，但这些实施方式是作为例子而提示的，没有意图限定发明的范围。这些新的实施方式能够以其他各种方式来实施，在不脱离发明的主旨的范围内，能够进行各种省略、替换、变更。这些实施方式、其变形包含于发明的范围、主旨中，且包含于权利要求书中记载的发明及其等价物的范围中。

Claims (12)

1.一种半导体装置，其中，具备：
板状的第1金属端子；
板状的第2金属端子，与上述第1金属端子对置地设置；
树脂层，设于上述第1金属端子与上述第2金属端子之间；以及
半导体芯片，具有电连接于上述第1金属端子的第1电极和电连接于上述第2金属端子的第2电极，
上述第1金属端子的与电连接于上述半导体芯片的一侧相反的一侧的端部处的、上述第1金属端子与上述第2金属端子之间的第1距离，比上述第1金属端子的从上述端部朝向上述半导体芯片的方向上所存在的部分处的、上述第1金属端子与上述第2金属端子之间的第2距离大，
上述第1金属端子的上述端部处的、上述第1金属端子的对置于上述第2金属端子的第一面与上述第2金属端子的对置于上述第一面的面是非平行的，
上述第1金属端子的上述部分处的、上述第1金属端子的对置于上述第2金属端子的第二面与上述第2金属端子的对置于上述第二面的面是平行的。
2.如权利要求1所述的半导体装置，其中，
上述第2金属端子的端部存在于与上述第1金属端子的上述端部对置的位置。
3.如权利要求1所述的半导体装置，其中，
上述第1距离是上述第2距离的1.2倍以上且2.0倍以下。
4.如权利要求1所述的半导体装置，其中，
上述第1金属端子的厚度与上述第2金属端子的厚度相等。
5.如权利要求1所述的半导体装置，其中，
上述第1金属端子的厚度以及上述第2金属端子的厚度朝向上述第1金属端子的上述端部变薄。
6.如权利要求1所述的半导体装置，其中，
上述树脂层是热塑性树脂。
7.一种半导体装置，其中，具备：
基板；
第1金属层，设于上述基板之上；
第2金属层，设于上述基板之上；
第1半导体芯片，设于上述第1金属层之上，具有第1电极、第2电极、以及第1栅极电极；
第2半导体芯片，设于上述第2金属层之上，具有第3电极、第4电极、以及第2栅极电极；
板状的第1金属端子，电连接于上述第1电极；
板状的第2金属端子，与上述第1金属端子对置地设置，电连接于上述第4电极；
第3金属端子，电连接于上述第2电极以及上述第3电极；
第1栅极端子，电连接于上述第1栅极电极；
第2栅极端子，电连接于上述第2栅极电极；以及
树脂层，设于上述第1金属端子与上述第2金属端子之间，
上述第1金属端子的与电连接于上述第1半导体芯片的一侧相反的一侧的端部处的、上述第1金属端子与上述第2金属端子之间的第1距离，比上述第1金属端子的从上述端部朝向上述第1半导体芯片的方向上所存在的部分处的、上述第1金属端子与上述第2金属端子之间的第2距离大，
上述第1金属端子的上述端部处的、上述第1金属端子的对置于上述第2金属端子的第一面与上述第2金属端子的对置于上述第一面的面是非平行的，
上述第1金属端子的上述部分处的、上述第1金属端子的对置于上述第2金属端子的第二面与上述第2金属端子的对置于上述第二面的面是平行的。
8.如权利要求7所述的半导体装置，其中，
上述第2金属端子的端部存在于与上述第1金属端子的上述端部对置的位置。
9.如权利要求7所述的半导体装置，其中，
上述第1距离是上述第2距离的1.2倍以上且2.0倍以下。
10.如权利要求7所述的半导体装置，其中，
上述第1金属端子的厚度与上述第2金属端子的厚度相等。
11.如权利要求7所述的半导体装置，其中，
上述第1金属端子的厚度以及上述第2金属端子的厚度朝向上述第1金属端子的上述端部变薄。
12.如权利要求7所述的半导体装置，其中，
上述树脂层是热塑性树脂。
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