CN110265517A - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
- Publication number
- CN110265517A CN110265517A CN201910304082.1A CN201910304082A CN110265517A CN 110265517 A CN110265517 A CN 110265517A CN 201910304082 A CN201910304082 A CN 201910304082A CN 110265517 A CN110265517 A CN 110265517A
- Authority
- CN
- China
- Prior art keywords
- light
- layer
- emitting component
- oxide
- laminated
- Prior art date
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- Granted
Links
- 230000003760 hair shine Effects 0.000 claims abstract description 18
- QTPKWWJYDWYXOT-UHFFFAOYSA-N [W+4].[O-2].[In+3] Chemical compound [W+4].[O-2].[In+3] QTPKWWJYDWYXOT-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 15
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000004026 adhesive bonding Methods 0.000 description 11
- 239000010949 copper Substances 0.000 description 10
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 8
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000004411 aluminium Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 7
- 229910001195 gallium oxide Inorganic materials 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 4
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 4
- 229910052793 cadmium Inorganic materials 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 4
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- -1 acryl Chemical group 0.000 description 2
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000012447 hatching Effects 0.000 description 2
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 239000011156 metal matrix composite Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LYYBDUVEZRFROU-UHFFFAOYSA-N [W].[In] Chemical compound [W].[In] LYYBDUVEZRFROU-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011153 ceramic matrix composite Substances 0.000 description 1
- HPNSNYBUADCFDR-UHFFFAOYSA-N chromafenozide Chemical compound CC1=CC(C)=CC(C(=O)N(NC(=O)C=2C(=C3CCCOC3=CC=2)C)C(C)(C)C)=C1 HPNSNYBUADCFDR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- OVXQHPWHMXOFRD-UHFFFAOYSA-M ecothiopate iodide Chemical compound [I-].CCOP(=O)(OCC)SCC[N+](C)(C)C OVXQHPWHMXOFRD-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
A kind of light-emitting component shines laminated comprising one, includes a luminescent layer, and the luminescent layer has one first width；And transparent conducting structures, it shines laminated upper positioned at this and includes indium oxide tungsten (IWO)；Wherein, in terms of the section of the light-emitting component, which has one first width, which has one second width greater than first width.
Description
This divisional application be on 07 17th, 2013 the applying date, application No. is 201310300955.4, it is entitled
The divisional application of " light-emitting component ".
Technical field
The present invention is about a kind of light-emitting component, especially with regard to a kind of light-emitting component with transparent conducting structures.
Background technique
Photoelectric cell, such as light emitting diode (Light-emitting Diode；LED), it has been widely used at present
In optical display, traffic sign, data memory device, communication device, lighting device and medical equipment.In addition, above-mentioned
LED can be combined with other elements connection to form a light emitting device.Fig. 1 is known luminous device structure schematic diagram, such as Fig. 1
Shown, a light emitting device 1 includes a secondary carrier 12 with a circuit 14；One solder 16 is located on above-mentioned secondary carrier 12, by
LED 11 is fixed on time carrier 12 and is electrically connected LED 11 with the formation of circuit 14 on time carrier 12 by this solder 16；And
One electric connection structure 18, with the circuit 14 being electrically connected on the electrode 15 and time carrier 12 of LED 11；Wherein, above-mentioned secondary load
Body 12 can be lead frame or large scale inlays substrate.
Summary of the invention
A kind of light-emitting component , Bao Han ︰ shines laminated, includes luminescent layer, and the luminescent layer has one first width；And thoroughly
Bright conductive structure shines laminated upper and includes indium oxide tungsten (IWO) positioned at this；Wherein, in terms of the section of the light-emitting component, the hair
Photosphere has the first width, which has the second width greater than first width.
A kind of light-emitting component also includes that substrate and catoptric arrangement are located between the substrate and the transparent conducting structures.
A kind of light-emitting component, in terms of the section of the light-emitting component, which has the third greater than first width
Width.
A kind of light-emitting component, in terms of the section of the light-emitting component, which has the 4th width greater than first width.
A kind of light-emitting component, this shine it is laminated have upper surface far from the transparent conducting structures, and the upper surface be it is coarse
Surface.
A kind of light-emitting component also include first electrode be located at this shine it is laminated on, the first electrode have electric current injection unit,
First extension extends from the electric current injection unit to the boundary of the light-emitting component and the second extension is connected to first extension
Portion, and second extension compared with first extension far from the electric current injection unit.
A kind of light-emitting component also include electric contacting layer be located at second extension and this shine it is laminated between.
A kind of light-emitting component, second extension and this shine it is laminated between do not have the electric contacting layer.
A kind of light-emitting component also includes second electrode, which is located between the second electrode and the catoptric arrangement.
A kind of light-emitting component includes: substrate；It shines laminated be located on the substrate and with lower surface and luminescent layer；Insulation
Layer shines positioned at this and laminated directly contacts between the substrate and with the lower surface；Hole passes through the insulating layer to expose under this
Surface；And catoptric arrangement, it is directly engaged between the substrate and the insulating layer and with the insulating layer.
There is some not overlap with the luminescent layer for a kind of light-emitting component, the insulating layer.
A kind of light-emitting component also includes that conductive gluing layer is located between the catoptric arrangement and the substrate.
A kind of light-emitting component, wherein the material of the catoptric arrangement includes copper (Cu), aluminium (Al), tin (Sn), golden (Au), silver
(Ag), the alloy of lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W) or above-mentioned material.
A kind of light-emitting component includes: shining laminated, includes luminescent layer；Window layers, positioned at this shine it is laminated on；And absolutely
Edge layer is located in the window layers, and has the first surface of the opposite window layers；Wherein, which has the opposite insulation
The second surface of layer, and the ratio of the area of the area of the first surface and the second surface is 0.5~0.9.
A kind of light-emitting component also includes substrate, which is located between the substrate and the window layers.
A kind of light-emitting component, in terms of the section of the light-emitting component, the luminescent layer is with the first width and the substrate has greatly
In the 4th width of first width.
A kind of light-emitting component also includes catoptric arrangement, is located on the insulating layer, and in terms of the section of the light-emitting component, this is anti-
Penetrating structure has the third width for being greater than first width.
A kind of light-emitting component also includes conductive oxide layer, between the window layers and the catoptric arrangement, wherein from shining
The section of element sees that the luminescent layer has a boundary, and the conductive oxide layer protrudes the boundary.
A kind of light-emitting component, the insulating layer include multiple holes, which inserts in multiple hole.
A kind of light-emitting component, the insulating layer are located between the conductive oxide layer and the window layers.
Detailed description of the invention
Fig. 1 is painted known luminous device structure schematic diagram.
Fig. 2A is painted the top view of the light-emitting component of one embodiment of the invention.
Fig. 2 B is painted Fig. 2A along the sectional view of hatching AA '.
Fig. 3 is painted surface of the first contact upper surface surface area relative to the first contact upper surface and the second contact upper surface
Schematic diagram of the percentage of product summation to power.
Fig. 4 is painted the light bulb decomposition diagram of one embodiment of the invention.
[label declaration]
1 light emitting device, 11 LED
12 carriers 13,20 substrates
14 circuit, 15 electrode
16 solder, 18 electric connection structure
2, the conductive gluing layer of 40 light-emitting component 21
22 catoptric arrangement, 220 ohmic contact layer
222 barrier layers 224 reflect gluing layer
226 reflecting layer, 23 transparent conducting structures
230 first conductive oxide layers 231 first contact upper surface
232 second conductive oxide layer, 24 non-oxide insulative layer
241 second contact 242 holes of upper surface
25 shine laminated 251 first semiconductor layer
252 luminescent layer, 253 second semiconductor layer
254 go out 26 electric contacting layer of light upper surface
27 first electrode, 271 electric current injection unit
272 extension, 273 protruding portion
2721 first branch line, 2,722 second branch line
28 second electrode, 29 window layers
4 light bulb, 41 lampshade
42 lens, 43 carrier
44 lighting module, 45 lamp holder
46 radiating groove, 47 linking part
48 electric connectors
Specific embodiment
The embodiment of the present invention can be described in detail, and be drawn in schema, and same or similar part can be with phase
Same number in each schema and illustrates occur.
Fig. 2A is the light-emitting component top view of one embodiment of the invention, and Fig. 2 B is painted Fig. 2A along the sectional view of hatching AA '.
As shown in Figure 2 B, a light-emitting component 2 has a substrate 20；One conductive gluing layer 21, is located on substrate 20；One catoptric arrangement
22, it is located on conductive gluing layer 20；One transparent conducting structures 23 are located on catoptric arrangement 22；One window layers 29 are located at saturating
On bright conductive structure 23；One non-oxide insulative layer 24, between transparent conducting structures 23 and window layers 29；One shines repeatedly
Layer 25 is located on window layers 29；One electric contacting layer 26, positioned at shining on laminated 25, a first electrode 27 is located at and shines repeatedly
On layer 25 and electric contacting layer 26；And a second electrode 28, it is located under substrate 20.Shining laminated 25 has one the first half to lead
Body layer 251, between window layers 29 and first electrode 27；One active layers 252 are located at the first semiconductor layer 251 and the first electricity
Between pole 27；And one second semiconductor layer 253, between active layers 252 and first electrode 27.
First electrode 27 and/or second electrode 28, can be by transparent conductive material or metal materials to receive external voltage
It is constituted.Transparent conductive material is including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin
(CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), indium oxide tungsten (IWO),
Zinc oxide (ZnO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), GaAs (GaAs), gallium arsenide phosphide
(GaAsP), indium zinc oxide (IZO) or diamond-like carbon film (DLC).Metal material is including but not limited to aluminium (Al), chromium (Cr), copper
(Cu), tin (Sn), golden (Au), nickel (Ni), titanium (Ti), platinum (Pt), lead (Pb), zinc (Zn), cadmium (Cd), antimony (Sb), cobalt (Co) or
The alloy etc. of above-mentioned material.First electrode 27 has an electric current injection unit 271 and an extension 272.As shown in Figure 2 A, electric current is infused
Enter portion 271 to be located substantially on the center of the second semiconductor layer 253, there is extension 272 one first branch line 2721 to infuse from electric current
Enter portion 271 to extend to the extension of the boundary of light-emitting component 2 and one second branch line 2722 from the first branch line 2721, to promote electric current
Diffusion.As shown in Figure 2 B, extension 272 includes a protrusion 273, is located on electric contacting layer 26, and cladding electric contacting layer 26 is at least
One surface increases the area that Ohmic contact is formed with electric contacting layer 26, reduces the resistance of light-emitting component 2, wherein protrusion 273 is higher than
Electric current injection unit 271.
Electric contacting layer 26 is located at the second branch line 2722 and shines between laminated 25, to form the second branch line 2722 and shine
Ohmic contact between laminated 25.It resistance value and electric contacting layer 26 between electric contacting layer 26 and the second branch line 2722 and shines
The resistance value that resistance value between laminated 25 is respectively smaller than first electrode 27 and shines between laminated 25.The material of electric contacting layer 26
It can be semiconductor material, comprising more than one element, this element can be selected from gallium (Ga), aluminium (Al), indium (In), phosphorus (P), nitrogen
(N), the group that zinc (Zn), cadmium (Cd) and selenium (Se) are constituted, electrical property can be identical as the second semiconductor layer 253.
Shine laminated 25 material can for semiconductor material, comprising more than one element, this element can be selected from gallium (Ga),
The group that aluminium (Al), indium (In), phosphorus (P), nitrogen (N), zinc (Zn), cadmium (Cd) and selenium (Se) are constituted.First semiconductor layer 251 with
The electrical property of second semiconductor layer 253 is different, to generate electrons or holes.One of second semiconductor layer 253 goes out light upper surface 254
It can be a rough surface to reduce total reflection, promote the luminous efficiency of photoelectric cell 2.Active layers 252 are capable of emitting one or more
Coloured light can be visible light or black light, and structure can be single heterojunction structure, double-heterostructure, bilateral double-heterostructure, multilayer
Quantum well or quantum dot.The electrical property of window layers 29 can be identical as the electrical property of the first semiconductor layer 251, can be used as light extraction layer to mention
Rise the luminous efficiency of light-emitting component 2.Window layers 29 for 252 issued light of active layers be it is transparent, material can be electrically conducting transparent
Material, including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin
(ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), indium oxide tungsten (IWO), zinc oxide (ZnO), oxygen
Change magnesium (MgO), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP) or indium zinc oxide (IZO).
Transparent conducting structures 23 for shine laminated 25 issued light be it is transparent, to increase window layers 251 and reflection tie
Ohmic contact and electric current conduction and diffusion between structure 22, and Omni-directional reflector (Omni- can be formed with catoptric arrangement 22
Directional Reflector, ODR).Its material can be transparent conductive material, including but not limited to tin indium oxide (ITO),
Indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide
(ZTO), gallium oxide zinc (GZO), indium oxide tungsten (IWO), zinc oxide (ZnO), gallium phosphide (GaP), indium oxide cerium (ICO), oxidation
Indium tungsten (IWO), indium oxide titanium (ITiO), indium zinc oxide (IZO), indium gallium (IGO), gallium oxide aluminium zinc (GAZO) or above-mentioned material
The combination of material.Transparent conducting structures 23 have one first conductive oxide layer 230, are located under non-oxide insulative layer 24, and
One second conductive oxide layer 232, positioned at shining laminated 25 and first between conductive oxide layer 230.Wherein, the first conductive oxide layer
230 is different from 232 material of the second conductive oxide layer.In another embodiment, the first conductive oxide layer 230 and the second conductive oxide layer
232 material is compared at least one set of different at element, such as the material of the first conductive oxide layer 230 is indium zinc oxide (IZO), the
The material of two conductive oxide layers 232 is tin indium oxide (ITO).Second conductive oxide layer 232 can with non-oxide insulating layer 24 and/or
Window layers 29 directly contact, and cover the non-oxide at least surface of insulating layer 24.
Non-oxide insulative layer 24 for laminated 25 issued light that shines penetrance be greater than 90%, refractive index less than 1.4,
Preferably between 1.3 and 1.4.The material of non-oxide insulative layer 24 can be non-oxide insulative material, for example, benzo
Cyclobutane (BCB), cyclic olefin polymer (COC), fluorocarbon polymer (Fluorocarbon Polymer), silicon nitride (SiNx)、
Calcirm-fluoride (CaF2) or magnesium fluoride (MgF2).In another embodiment, the material of non-oxide insulative layer 24 may include halide or
Group IIA and the compound of VII race, such as calcirm-fluoride (CaF2) or magnesium fluoride (MgF2).The refractive index of non-oxide insulative layer 24 is small
In the refractive index of window layers 29 and transparent conducting structures 23.Due to non-oxide insulative layer 24 refractive index be less than window layers 29 with
The refractive index of transparent conducting structures 23, the critical angle of window layers 29 and 24 interface of non-oxide insulative layer be less than window layers 29 with
The critical angle of 23 interface of transparent conducting structures, so after the laminated 25 issued light directive non-oxide insulative layer 24 that shines,
The probability that interface between window layers 29 and non-oxide insulative layer 24 forms total reflection increases.In addition, originally in window layers 29
The not formed total reflection of interface between transparent conducting structures 23 and the light for entering transparent conducting structures 23, in transparent conducting structures
Interface between 23 and non-oxide insulative layer 24 also will form total reflection, thus promote the light extraction efficiency of light-emitting component 2.It is transparent
There is conductive structure 23 one first contact upper surface 231 to contact with window layers 29, and non-oxide insulative layer 24 has one second to connect
Touching upper surface 241 is contacted with window layers 29, and the first contact upper surface 231 and the second contact upper surface 241 are located substantially at same water
Plane, i.e., the first contact upper surface 231 is with light upper surface 254 out at a distance from substantially with the second contact upper surface 241 and out on light
Surface 254 is equidistant.Fig. 3 is painted 231 surface area of the first contact upper surface relative to the first contact upper surface 231 and second
Schematic diagram of the percentage of the surface area summation of contact upper surface 241 to the power of light-emitting component 2.As shown in figure 3, the first contact
Percentage of the surface area of upper surface 231 relative to the surface area summation of the first contact upper surface 231 and the second contact upper surface 241
When than being about 10%~50%, the power of light-emitting component 2 is the light-emitting component function on 50 compared to percentage on 50mW
Rate is preferred.When more preferably percentage is about 12.5%~25%, power is on 55mW.In other words, non-oxide insulative layer 24
The surface areas of opposite window layers 29 and window layers 29 with respect to the ratio of the surface area of non-oxide insulative layer 24 be about 0.5~
0.9, the power of light-emitting component 2 is preferable.In another embodiment, the second contact upper surface 241 can be a rough surface, and scattering shines
Laminated issued light is to promote the light extraction efficiency of photoelectric cell 2.Non-oxide insulative layer 24 can have patterned distribution, such as greatly
The underface for being located at electric contacting layer 26 and/or electric current injection unit 271 is caused, the diffusion of electric current is promoted.It is non-oxide in another embodiment
Object insulating layer 24 can present irregularity distribution or it is non-positioned at electric contacting layer 26 and/or electric current injection unit 271 just under
Side.The thickness of non-oxide insulative layer 24 is less than a half thickness of transparent conducting structures 23；In another embodiment, non-oxidized substance is exhausted
The thickness of edge layer 24 is less than 1/5 thickness of transparent conducting structures 23, and the surface after being formed to avoid transparent conducting structures 23 is flat
Change the structure that processing procedure destroys non-oxide insulative layer 24.It is covered by transparency conducting layer 23 on at least surface of non-oxide insulative layer 24
Lid increases the engagement between transparency conducting layer 23 and window layers 29, the mechanical strength of lift structure.It is non-oxygen in another embodiment
Compound insulating layer 24 can directly be engaged with catoptric arrangement 22, avoid between transparent conducting structures 23 and catoptric arrangement 22 cohesion not
Foot, causes to remove.Non-oxide insulative layer 24 also passes through non-oxide insulative layer 24 comprising multiple holes 242, wherein transparent lead
Electric structure 23 is inserted in multiple holes 242, forms Ohmic contact with window layers 29.
Catoptric arrangement 22 can reflect the light for carrying out self-luminous laminated 25, and material can be metal material, including but not limited to copper
(Cu), aluminium (Al), tin (Sn), golden (Au), silver-colored (Ag), lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W) or above-mentioned material
Alloy etc..Catoptric arrangement 22 includes a reflecting layer 226；One reflection gluing layer 224 is located under reflecting layer 226；One barrier layer
222, it is located under reflection gluing layer 224；And an ohmic contact layer 220, it is located under barrier layer 222.It reflecting layer 226 can be anti-
The light for carrying out self-luminous laminated 25 is penetrated, reflection gluing layer 224 coheres reflecting layer 226 and barrier layer 222, and barrier layer 222 can prevent instead
The material for penetrating layer 226 diffuses to electrode layer 220, destroys the structure in reflecting layer 226, causes the reflectivity in reflecting layer 226 to reduce, Europe
Nurse contact layer 220 and underlying conductive gluing layer 21 form Ohmic contact.Conductive gluing layer 21 can connecting substrate 20 and catoptric arrangement
22, there can be multiple subordinate layer (not shown)s.The material of conductive gluing layer 21 can be transparent conductive material or metal material, it is transparent
Conductive material is including but not limited to tin indium oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin (CTO), oxidation
Antimony tin (ATO), aluminum zinc oxide (AZO), zinc-tin oxide (ZTO), gallium oxide zinc (GZO), zinc oxide (ZnO), gallium phosphide (GaP),
Indium oxide cerium (ICO), indium oxide tungsten (IWO), indium oxide titanium (ITiO), indium zinc oxide (IZO), indium gallium (IGO), gallium oxide
The combination of aluminium zinc (GAZO) or above-mentioned material.Metal material is including but not limited to copper (Cu), aluminium (Al), tin (Sn), golden (Au), silver
(Ag), lead (Pb), titanium (Ti), nickel (Ni), platinum (Pt), tungsten (W) or alloy of above-mentioned material etc..
Substrate 20 can be used to support it is disposed thereon shine laminated 25 with other layers or structure, material can be transparent material
Or conductive material.Transparent material is including but not limited to sapphire (Sapphire), diamond (Diamond), glass (Glass), ring
Oxygen resin (Epoxy), quartz (Quartz), acryl (Acryl), aluminium oxide (Al2O3), zinc oxide (ZnO) or aluminium nitride
(AlN) etc..Conductive material including but not limited to copper (Cu), aluminium (Al), molybdenum (Mo), tin (Sn), zinc (Zn), cadmium (Cd), nickel (Ni),
Cobalt (Co), diamond-like carbon film (Diamond Like Carbon；DLC), graphite (Graphite), carbon fiber (Carbon
Fiber), metal-base composites (Metal Matrix Composite；MMC), ceramic matric composite (Ceramic
Matrix Composite；CMC), silicon (Si), Echothiopate Iodide (IP), zinc selenide (ZnSe), GaAs (GaAs), silicon carbide
(SiC), gallium phosphide (GaP), gallium arsenide phosphide (GaAsP), indium phosphide (InP), lithium gallium oxide (LiGaO2) or lithium aluminate (LiAlO2)。
Fig. 4 is to show a light bulb decomposition diagram, and a light bulb 4 has a lampshade 41；One lens 42, be placed in lampshade 41 it
In；One lighting module 44 is located under lens 42；One lamp holder 45 has a radiating groove 46, to carry lighting module 44；One
Linking part 47；And an electric connector 48, wherein linking part 47 links lamp holder 45 and electric connector 48.Lighting module 44 has one
Carrier 43；And the light-emitting component 40 of multiple aforementioned any embodiments, it is located on carrier 43.
Only above-described embodiment is only that the principle of the present invention and its effect is illustrated, and is not intended to limit the present invention.Appoint
What those skilled in the art can repair above-described embodiment without prejudice to technical principle and spirit of the invention
Change and changes.Therefore listed by claims scope of the claims as mentioned of the invention.
Claims (3)
1. a kind of light-emitting component , Bao Han ︰
It shines laminated, includes luminescent layer, and the luminescent layer has one first width；And
Transparent conducting structures shine laminated upper and include indium oxide tungsten (IWO) positioned at this；
Wherein, in terms of the section of the light-emitting component, which has the first width, the transparent conducting structures have be greater than this
Second width of one width.
2. a kind of light-emitting component, includes:
Substrate；
It shines laminated be located on the substrate and with lower surface and luminescent layer；
Insulating layer shines positioned at this and laminated directly contacts between the substrate and with the lower surface；
Hole passes through the insulating layer with the exposure lower surface；And
Catoptric arrangement directly engages between the substrate and the insulating layer and with the insulating layer.
3. a kind of light-emitting component, includes:
It shines laminated, includes luminescent layer；
Window layers, positioned at this shine it is laminated on；And
Insulating layer is located in the window layers, and has the first surface of the opposite window layers；
Wherein, which has the second surface of the opposite insulating layer, and the area of the first surface and the second surface
The ratio of area is 0.5~0.9.
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| TWI701847B (en) * | 2015-02-19 | 2020-08-11 | 晶元光電股份有限公司 | Light-emitting element having a reflective structure with high efficiency |
| CN108258097B (en) * | 2017-12-29 | 2020-01-03 | 天津三安光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN104638078B (en) * | 2015-03-05 | 2017-05-10 | 天津三安光电有限公司 | Light emitting diode and manufacturing method for same |
| EP3333908B1 (en) * | 2015-08-07 | 2021-11-03 | Suzhou Lekin Semiconductor Co., Ltd. | Light emitting device |
| TWI699909B (en) * | 2017-05-19 | 2020-07-21 | 晶元光電股份有限公司 | Light-emitting element |
| DE102017114467A1 (en) * | 2017-06-29 | 2019-01-03 | Osram Opto Semiconductors Gmbh | Semiconductor chip with transparent current spreading layer |
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| CN104300055B (en) | 2019-05-10 |
| CN110265517B (en) | 2024-03-29 |
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