CN101212011A - LED and its making method - Google Patents
LED and its making method Download PDFInfo
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- CN101212011A CN101212011A CNA2006101728280A CN200610172828A CN101212011A CN 101212011 A CN101212011 A CN 101212011A CN A2006101728280 A CNA2006101728280 A CN A2006101728280A CN 200610172828 A CN200610172828 A CN 200610172828A CN 101212011 A CN101212011 A CN 101212011A
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Abstract
The invention relates to a luminescent diode (LED) and a manufacturing method thereof. The LED at least comprises the following processes: a conductive base plate is provided with a first surface relative with a second surface; a metal joint layer is arranged on the first surface of the conductive base plate; a metal reflecting layer is jointed with the metal joint layer; an N type semiconductor layer is arranged on the metal reflecting layer; an active layer is arranged on the N type semiconductor layer; a P type semiconductor layer is arranged on the active layer; a window layer is arranged on the P type semiconductor layer, wherein the thickness of the window layer is above 50Mum and the window layer is composed of transparent conductive material; a P type electrode is arranged on the window layer.
Description
Technical field
Relevant a kind of light-emitting diode (LED) of the present invention and manufacture method thereof, and particularly relevant a kind of high efficient LED and manufacture method thereof.
Background technology
In the making of light-emitting diode, III-V family semiconducting compound, for example gallium nitride (GaN), aluminium gallium nitride alloy (AlGaN), InGaN (InGaN) and aluminum indium nitride gallium materials such as (AlInGaN) are quite common materials.This type of is grown up on nonconducting sapphire substrate mostly by the luminous epitaxial structure that III-V family semiconducting compound is constituted, but and different with the electrically-conductive backing plate of other light-emitting components employings.Because sapphire substrate is an insulator, can not directly electrode be made on this sapphire substrate.Therefore, during the electrode of the light-emitting diode that making III-V family semiconducting compound is constituted, electrode is directly distinctly contacted with n type semiconductor layer with p type semiconductor layer, just can finish the making of this type of light-emitting component.
General traditional light emitting diode construction adopts N p type gallium arensidep (GaAs) as primary substrate (GrowthSubstrate) material.Because the primary substrate meeting absorbing light that the N p type gallium arensidep is constituted, therefore in the photon that active layers produced of light-emitting diode, photon major part towards primary orientation substrate will be absorbed by primary substrate, and have a strong impact on the luminous efficiency of light-emitting diode.
For avoiding the substrate extinction problem of light-emitting diode, people such as the Belgian Gent I.Pollentirer of university deliver the technology that the gallium arsenide light emitting diode wafer is directly joined to silicon (Si) substrate after peeling off on the GaAs substrate in nineteen ninety at Electronics Letters periodical.In addition, U.S. Hewlett-Packard company discloses the technology that aluminum gallium arsenide (AlGaAs) LED wafer is directly joined to other substrates after the GaAs substrate is peeled off in its United States Patent (USP) No. 5376580 (March 19 1993 applying date).Yet the shortcoming that No. the 5376580th, this United States Patent (USP) is to be the applying medium with the semiconductor, and the lattice direction that therefore must consider to fit between two semiconductor wafers is alignd, difficulty in process degree height, thereby cause yield to reduce.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of light-emitting diode, have thicker window layers (WindowLayer), help the electric current diffusion, and can promote light taking-up efficient, reach the effect of the brightness that improves light-emitting diode.
Another object of the present invention provides a kind of light-emitting diode, is P type structure up, therefore is easier to element surface is carried out roughened, and can promotes light extraction efficiency, and then can improve luminosity.
Another purpose of the present invention provides a kind of manufacturing method for LED, it is the thicker window layers of growing up on primary substrate, and can be as temporary transient supporting construction during the subsequent handling of light-emitting diode, therefore the removing of primary substrate, the subsequent handling of luminous epitaxial structure and the necessary operation of permanent substrate, all can before wafer applying program, finish, thus, need not be subject to the binding temperature of lower temperature, and can increase the operation window widely, effectively improve the operation yield.
A further object of the present invention provides a kind of manufacturing method for LED, and it can utilize the lower alloy of fusing point to be used as the medium that wafer is fitted, and therefore can effectively improve the reliability of wafer bonding process.
According to above-mentioned purpose of the present invention, a kind of light-emitting diode is proposed, comprise at least: an electrically-conductive backing plate has opposite first and second surface; One metallic bond layer is located on the first surface of electrically-conductive backing plate; One metallic reflector is bonded on the metallic bond layer; One n type semiconductor layer is located on the metallic reflector; One active layers is located on the n type semiconductor layer; One p type semiconductor layer is located on the active layers; One window layers is located on the p type semiconductor layer, and wherein the thickness of this window layers is more than the 50 μ m, and this window layers is made up of transparent conductive material; And a P type electrode, be located on the window layers.
According to a preferred embodiment of the present invention, the thickness of above-mentioned window layers is between 50 μ m to 200 μ m.
According to purpose of the present invention, a kind of manufacturing method for LED is proposed, comprise at least: a primary substrate is provided; Form a n type semiconductor layer on primary substrate; Form an active layers on n type semiconductor layer; Form a p type semiconductor layer on active layers; Form a window layers on p type semiconductor layer, wherein a thickness of window layers is more than the 50 μ m, and this window layers is made up of transparent conductive material; Remove primary substrate; Form a P type electrode on the window layers of part; Form a metallic reflector on n type semiconductor layer, wherein metallic reflector and active layers are positioned at relative two sides of n type semiconductor layer; One electrically-conductive backing plate is provided, and wherein this electrically-conductive backing plate has opposite first and second surface, and the first surface of electrically-conductive backing plate is provided with a metallic bond layer; And carry out an applying step, so that metallic reflector engages with metallic bond layer.
According to a preferred embodiment of the present invention, the step of above-mentioned formation window layers comprises another part thickness that utilizes a Metalorganic chemical vapor deposition mode to form a part of thickness of window layers and utilize gas phase crystal type formation of heap of stone window layers at least.
Description of drawings
Fig. 1 to Fig. 4 is the production process profile according to a kind of light-emitting diode of a preferred embodiment of the present invention.
Embodiment
The present invention discloses a kind of light-emitting diode and manufacture method thereof, has thicker window layers, therefore can promote the electric current diffusion, and can improve light and take out efficient, the roughened that more helps element surface, further improve light extraction efficiency, reach the effect of the luminosity that promotes light-emitting diode.In addition, can before fitting, wafer finish the operation that is necessary, so binding temperature elasticity more, and can obtain wider operation window.What is more, can use the lower alloy of fusing point to be used as the medium that wafer is fitted, therefore can improve the reliability of wafer bonding process.In order to make narration of the present invention more detailed and complete, can be with reference to following description in conjunction with Fig. 1 to Fig. 4.
Please refer to Fig. 1 to Fig. 4, it is the production process profile according to a kind of light-emitting diode of a preferred embodiment of the present invention.In the present invention, when making light-emitting diode, provide primary substrate 100 earlier, then can utilize directly growth n type semiconductor layer 106 on the surface of primary substrate 100 of crystal type for example of heap of stone.In one embodiment of this invention, optionally form earlier N type contact layer 104 on the surface of primary substrate 100, building crystal to grow n type semiconductor layer 106 on N type contact layer 104 again is with the electrical quality of lift elements.In another embodiment of the present invention, more optionally prior to deposition etch stop layer 102 on the surface of primary substrate 100, building crystal to grow N type contact layer 104 and n type semiconductor layer 106 in regular turn on etch stop layer 102 again, in order to the carrying out that removes operation of subsequent native substrate 100, as shown in Figure 1.In this preferred embodiment, be formed with earlier etch stop layer 102 and N type contact layer 104 on the primary substrate 100 in regular turn, be to form n type semiconductor layer on the N type contact layer 104.The material of N type contact layer 104 can for example be N p type gallium arensidep (GaAs), N type gallium phosphide arsenic (GaAsP) or N type AlGaInP (AlGaInP).The material of n type semiconductor layer 106 can for example be N type AlGaInP [(Al
xGa
1- x)
0.5In
0.5P].Next, utilize crystal type growth active layers 108 on N type semiconductor 106 for example of heap of stone, wherein active layers 108 can for example be multiple quantum trap (Multiple Quantum Well; MQW) structure.Utilize crystal type for example of heap of stone again, growth p type semiconductor layer 110 on active layers 108, wherein the material of p type semiconductor layer 110 can for example be P type AlGaInP [(Al
xGa
1-x)
0.5In
0.5P].Subsequently, on p type semiconductor layer 110, form window layers 112, and form structure as shown in Figure 1.Wherein window layers 112 is made up of transparent conductive material, and the material of window layers 112 can for example be gallium phosphide (GaP), gallium phosphide arsenic (GaAsP) or aluminum gallium arsenide (AlGaAs).The preferable two-part that utilizes is built brilliant depositional mode when in the present invention, forming window layers 112.In a preferred embodiment of the present invention, utilize Metalorganic chemical vapor deposition (Metal Organic Chemical Vapor Deposition; MOCVD) mode forms the first film of the segment thickness with window layers 112, utilizes gas phase brilliant (Vapor Phase Epitaxy of heap of stone again; VPE) mode and on the first film, form second film of all the other thickness with window layers 112.In the present invention, the thickness of window layers 112 is bigger, is preferably more than the 50 μ m, for example between 50 μ m to 200 μ m, carries out follow-up production process so that the enough support structure of wafer to be provided.
In the present invention,, can be made into P type structure up, therefore not only help the electric current diffusion, take out efficient and can improve light because the thickness of window layers 112 is bigger.In addition, also, can further improve light extraction efficiency because the position of thicker window layers 112 up, and helps the carrying out of the roughened of element surface, but and then the brightness of lift elements.
After waiting to finish the making of window layers 112, as support structure, for example utilizing, etching mode removes primary substrate 100 with window layers 112.At this moment, if the surface of primary substrate 100 is provided with etch stop layer 102, then can utilize etch stop layer 102 to be used as etching end point.In the present invention, after primary substrate 100 removes, be preferably and remove etch stop layer 102 in the lump.In this preferred embodiment, finish primary substrate 100 remove processing after owing on etch stop layer 102, be formed with N type contact layer 104 originally, therefore after primary substrate 100 removes, expose N type contact layer 104, as shown in Figure 2.On the other hand, N type contact layer 104 is not set, then after primary substrate 100 removes, exposes n type semiconductor layer 106 if having.
Because the structural strength that the bigger window layers 112 of thickness is provided is enough to support epitaxial structure and carries out follow-up production process, therefore can under the support of window layers 112, remove primary substrate 100 smoothly.
After primary substrate 100 removes, can carry out subsequent treatment.For example, optionally, at first patterning N type contact layer 104, then on N type contact layer 104, form metal material layer 138 and the stacked structure of formation N type metal contact layer 134, to reduce the extinction effect of N type metal contact layer 134, and form netted or distribution point-like electrode structure, to take into account ohmic contact quality and light extraction efficiency.The material of metal material layer 138 can for example be a gold-germanium alloy.Forming transparency conducting layer 116 again covers the n type semiconductor layer 106 that exposes and is on the N type metal contact layer 134 of netted or distribution point-like electrode structure with these.In the present invention, the surface 118 of transparency conducting layer 116 engages with n type semiconductor layer 106.The material of transparency conducting layer 116 can for example be indium oxide (In
2O
3), tin oxide (SnO
2), zinc oxide (ZnO), tin indium oxide (ITO), cadmium tin (CTO), cupric oxide aluminium (CuAlO
2), cupric oxide gallium (CuGaO
2) or strontium oxide strontia gallium (SrCu
2O
2).Next, can form on the surface that metallic reflector 120 covers transparency conducting layer 116, wherein metallic reflector 120 is positioned on another surface of transparency conducting layer 116 of apparent surface 118, as shown in Figure 3.In other embodiments of the invention, can omit the making of transparency conducting layer 116 and N type metal contact layer 134, cover on the n type semiconductor layer 106 that exposes and directly form metallic reflector 120.The material of metallic reflector 120 can for example be gold (Au), aluminium (Al), silver (Ag), chromium (Cr) or nickel (Ni).In addition, also optionally form diffused barrier layer 122 in covering on the metallic reflector 120, as shown in Figure 3.The material of diffused barrier layer 122 can for example be molybdenum (Mo), platinum (Pt), tungsten (W), tin indium oxide, zinc oxide or manganese (Mn).In addition, utilize for example vapor deposition mode, form P type electrode 114 on the window layers 112 of part.
Simultaneously, provide permanent substrate, for example electrically-conductive backing plate 124.Electrically-conductive backing plate 124 is preferably by the high conduction to be formed with highly heat-conductive material, and wherein the material of electrically-conductive backing plate 124 can for example be silicon (Si), germanium (Ge), carborundum (SiC) or aluminium nitride (AlN).In one embodiment of this invention, can on the surface of electrically-conductive backing plate 124, directly form metallic bond layer 130.Metallic bond layer 130 is preferably and adopts the lower metal of fusing point, and wherein the material of metallic bond layer 130 can for example be terne metal (PbSn), gold-germanium alloy (AuGe), golden beryllium alloy (AuBe), gold-tin alloy (AuSn), tin, indium (In) or palladium indium alloy (PdIn).In a preferred embodiment of the present invention, ohmic contact layer 126 and ohmic contact layer 128 also optionally are set on relative two surfaces of electrically-conductive backing plate 124, and make ohmic contact layer 126 between metallic bond layer 130 and electrically-conductive backing plate 124, with the electrical quality of further enhancement light-emitting diode, as shown in Figure 3.Ohmic contact layer 126 can for example be titanium (Ti), nickel, gold or tungsten with the material of ohmic contact layer 128.
In the present invention, because window layers 112 has bigger thickness, therefore remove Jingjing sheet of heap of stone behind the primary substrate 100 of extinction and can fit at wafer and finish required treatment process before step is carried out, need not be subject to the binding temperature of lower temperature, and can enlarge the operation window, promote the operation yield.
As shown in Figure 3 and Figure 4, after waiting to finish the subsequent treatment operation of the epitaxial structure wafer that supported by window layers 112 and electrically-conductive backing plate 124, the step of can fitting, utilize metallic bond layer 130 on metallic bond layer 130 or diffused barrier layer 122 and the electrically-conductive backing plate 124 as engagement medium, so that metallic reflector 120 is engaged with electrically-conductive backing plate 124, and finish the making of light-emitting diode 132.After fitting, metallic reflector 120 can directly be connected with metallic bond layer 130, and perhaps metallic reflector 120 is to be connected with metallic bond layer 130 indirectly through diffused barrier layer 122, as shown in Figure 4.
In the present invention, be the medium that utilizes the lower metal or alloy of fusing point to be used as fitting, so binding temperature is the binding temperature of medium far below tradition with the semiconductor, and can improves the reliability that wafer is fitted, and then reach the purpose that improves fine ratio of product.
By the invention described above preferred embodiment as can be known, an advantage of the present invention is exactly because light-emitting diode of the present invention has thicker window layers, helps the electric current diffusion, and can promote light taking-up efficient, reaches the effect of the brightness that improves light-emitting diode.
By the invention described above preferred embodiment as can be known, another advantage of the present invention is exactly because light-emitting diode of the present invention is a P type structure up, therefore is easier to element surface is carried out roughened, and can promotes light extraction efficiency, and then can improve luminosity.
By the invention described above preferred embodiment as can be known, another advantage of the present invention is exactly because manufacturing method for LED of the present invention is the thicker window layers of growing up on primary substrate, and enough support structure can be provided during the subsequent handling of light-emitting diode, therefore the removing of primary substrate, the subsequent handling of luminous epitaxial structure and the necessary operation of permanent electrically-conductive backing plate, all can before wafer applying program, finish, thus, need not be subject to the binding temperature of lower temperature, and can increase the operation window widely, effectively improve the operation yield.
By the invention described above preferred embodiment as can be known, an advantage more of the present invention is exactly because manufacturing method for LED of the present invention can utilize the lower metal or alloy of fusing point to be used as the medium that wafer is fitted, and therefore can effectively improve the reliability of wafer bonding process.
Though the present invention discloses as above with a preferred embodiment; yet it is not in order to limit the present invention; any those having an ordinary knowledge in this technical field; without departing from the spirit and scope of the present invention; when can doing various changes that are equal to and retouching, so protection scope of the present invention is when looking accompanying being as the criterion that the application's claim scope defined.
Claims (26)
1. light-emitting diode comprises at least:
One electrically-conductive backing plate has a relative first surface and a second surface;
One metallic bond layer is located on this first surface of this electrically-conductive backing plate;
One metallic reflector is bonded on this metallic bond layer;
One n type semiconductor layer is located on this metallic reflector;
One active layers is located on this n type semiconductor layer;
One p type semiconductor layer is located on this active layers;
One window layers is located on this p type semiconductor layer, and wherein a thickness of this window layers is more than the 50 μ m, and this window layers is made up of a transparent conductive material; And
One P type electrode is located on this window layers.
2. light-emitting diode as claimed in claim 1, the material that it is characterized in that this electrically-conductive backing plate is silicon, germanium, carborundum or aluminium nitride.
3. light-emitting diode as claimed in claim 1, the material that it is characterized in that this metallic bond layer are terne metal, gold-germanium alloy, golden beryllium alloy, gold-tin alloy, tin, indium or palladium indium alloy.
4. light-emitting diode as claimed in claim 1 is characterized in that the material of this metallic reflector is gold, aluminium, silver, chromium or nickel.
5. light-emitting diode as claimed in claim 1, the material that it is characterized in that this n type semiconductor layer are N type AlGaInP [(Al
xGa
1-x)
0.5In
0.5P], this active layers is a multiple quantum trap structure, and the material of this p type semiconductor layer is P type AlGaInP [(Al
xGa
1-x)
0.5In
0.5P].
6. light-emitting diode as claimed in claim 1, the material that it is characterized in that this window layers are gallium phosphide, gallium phosphide arsenic or aluminum gallium arsenide.
7. light-emitting diode as claimed in claim 1, the thickness that it is characterized in that this window layers is between 50 μ m to 200 μ m.
8. light-emitting diode as claimed in claim 1 is characterized in that also comprising at least:
One first ohmic contact layer is bonded on this first surface of this electrically-conductive backing plate, and between this electrically-conductive backing plate and this metallic bond layer; And
One second ohmic contact layer is bonded on this second surface of this electrically-conductive backing plate.
9. light-emitting diode as claimed in claim 8, the material that it is characterized in that this first ohmic contact layer and this second ohmic contact layer is titanium, nickel, gold or tungsten.
10. light-emitting diode as claimed in claim 1 is characterized in that also comprising at least a diffused barrier layer, between this metallic bond layer and this metallic reflector.
11. light-emitting diode as claimed in claim 10, the material that it is characterized in that this diffused barrier layer is molybdenum, platinum, tungsten, tin indium oxide, zinc oxide or manganese.
12. light-emitting diode as claimed in claim 1 is characterized in that also comprising at least a transparency conducting layer, is bonded on the surface of this metallic reflector.
13. light-emitting diode as claimed in claim 12, the material that it is characterized in that this transparency conducting layer are indium oxide, tin oxide, zinc oxide, tin indium oxide, cadmium tin, cupric oxide aluminium, cupric oxide gallium or strontium oxide strontia gallium.
14. light-emitting diode as claimed in claim 12 is characterized in that also comprising at least:
One N type contact layer is positioned on this n type semiconductor layer of part; And
One metal material layer is located on this N type contact layer, and wherein this N type contact layer and this metal material layer are folded between this N type semiconductive layer and this transparency conducting layer, and are embedded in this transparency conducting layer.
15. light-emitting diode as claimed in claim 14, the material that it is characterized in that this N type contact layer are N p type gallium arensidep, N type gallium phosphide arsenic or N type AlGaInP.
16. a manufacturing method for LED comprises at least:
One primary substrate is provided;
Form a n type semiconductor layer on this primary substrate;
Form an active layers on this n type semiconductor layer;
Form a p type semiconductor layer on this active layers;
Form a window layers on this p type semiconductor layer, wherein a thickness of this window layers is more than the 50 μ m, and this window layers is made up of a transparent conductive material;
Remove this primary substrate;
Form a P type electrode on this window layers of part;
Form a metallic reflector on this n type semiconductor layer, wherein this metallic reflector and this active layers are positioned at relative two sides of this n type semiconductor layer;
One electrically-conductive backing plate is provided, and wherein this electrically-conductive backing plate has a relative first surface and a second surface, and this first surface of this electrically-conductive backing plate is provided with a metallic bond layer; And
Carry out an applying step, so that this metallic reflector engages with this metallic bond layer.
17. manufacturing method for LED as claimed in claim 16, the material that it is characterized in that this metallic bond layer are terne metal, gold-germanium alloy, golden beryllium alloy, gold-tin alloy, tin, indium or palladium indium alloy.
18. manufacturing method for LED as claimed in claim 16, the material that it is characterized in that this window layers are gallium phosphide, gallium phosphide arsenic or aluminum gallium arsenide.
19. manufacturing method for LED as claimed in claim 16, the thickness that it is characterized in that this window layers is between 50 μ m to 200 μ m.
20. manufacturing method for LED as claimed in claim 16 is characterized in that also comprising at least before this metallic bond layer is set:
Form one first ohmic contact layer, be bonded on this first surface of this electrically-conductive backing plate, so that this first ohmic contact layer is between this electrically-conductive backing plate and this metallic bond layer; And
Form one second ohmic contact layer, be bonded on this second surface of this electrically-conductive backing plate.
21. manufacturing method for LED as claimed in claim 16 is characterized in that before the step that forms this n type semiconductor layer, also comprises at least forming a N type contact layer, wherein this N type contact layer is between this n type semiconductor layer and this primary substrate.
22. manufacturing method for LED as claimed in claim 21 is characterized in that also comprising at least forming a transparency conducting layer on this N type contact layer between the step of the step that removes this primary substrate and this metallic reflector of formation.
23. manufacturing method for LED as claimed in claim 22 is characterized in that also comprising at least between the step of the step that removes this primary substrate and this transparency conducting layer of formation:
This N type contact layer of patterning is to expose this n type semiconductor layer of part; And
Form a metal material layer on this N type contact layer, wherein this N type contact layer and this metal material layer are folded between this n type semiconductor layer and this transparency conducting layer.
24. manufacturing method for LED as claimed in claim 16 is characterized in that between the step and this applying step that form this metallic reflector, also comprises at least forming a diffused barrier layer on this metallic reflector.
25. manufacturing method for LED as claimed in claim 16 is characterized in that before the step that forms this n type semiconductor layer, also comprises at least forming an etch stop layer, wherein this etch stop layer is between this n type semiconductor layer and this primary substrate.
26. manufacturing method for LED as claimed in claim 16 is characterized in that the step that forms this window layers comprises at least:
Utilize a Metalorganic chemical vapor deposition mode to form a first film of this window layers, and this first film have a part of thickness of this window layers; And
One second film that utilizes gas phase crystal type of heap of stone to form this window layers is positioned on this first film, and this second film has another part thickness of this window layers.
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|---|---|---|---|
| CNB2006101728280A CN100573937C (en) | 2006-12-29 | 2006-12-29 | Light-emitting diode and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101728280A CN100573937C (en) | 2006-12-29 | 2006-12-29 | Light-emitting diode and manufacture method thereof |
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| CN101212011A true CN101212011A (en) | 2008-07-02 |
| CN100573937C CN100573937C (en) | 2009-12-23 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656282A (en) * | 2008-08-18 | 2010-02-24 | 晶元光电股份有限公司 | Light-emitting diode device, backlight module device using same and illumination device using same |
| CN101740674B (en) * | 2008-11-26 | 2011-08-31 | 晶元光电股份有限公司 | Light-emitting element structure and manufacturing method thereof |
| JP2017201655A (en) * | 2016-05-02 | 2017-11-09 | 日機装株式会社 | Deep uv light-emitting device and method for manufacturing deep uv light-emitting device |
| CN108630765A (en) * | 2017-03-17 | 2018-10-09 | 株式会社东芝 | Solar cell, more junction type solar cells, solar cell module and solar power system |
| CN110265517A (en) * | 2013-07-17 | 2019-09-20 | 晶元光电股份有限公司 | Light-emitting component |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI572060B (en) * | 2015-11-20 | 2017-02-21 | 國立中興大學 | Light-emitting diode and manufacturing method thereof |
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2006
- 2006-12-29 CN CNB2006101728280A patent/CN100573937C/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656282A (en) * | 2008-08-18 | 2010-02-24 | 晶元光电股份有限公司 | Light-emitting diode device, backlight module device using same and illumination device using same |
| CN101740674B (en) * | 2008-11-26 | 2011-08-31 | 晶元光电股份有限公司 | Light-emitting element structure and manufacturing method thereof |
| CN110265517A (en) * | 2013-07-17 | 2019-09-20 | 晶元光电股份有限公司 | Light-emitting component |
| CN110265517B (en) * | 2013-07-17 | 2024-03-29 | 晶元光电股份有限公司 | Light-emitting element |
| JP2017201655A (en) * | 2016-05-02 | 2017-11-09 | 日機装株式会社 | Deep uv light-emitting device and method for manufacturing deep uv light-emitting device |
| CN108630765A (en) * | 2017-03-17 | 2018-10-09 | 株式会社东芝 | Solar cell, more junction type solar cells, solar cell module and solar power system |
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| Publication number | Publication date |
|---|---|
| CN100573937C (en) | 2009-12-23 |
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