CN101752466A - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
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- CN101752466A CN101752466A CN200810177820A CN200810177820A CN101752466A CN 101752466 A CN101752466 A CN 101752466A CN 200810177820 A CN200810177820 A CN 200810177820A CN 200810177820 A CN200810177820 A CN 200810177820A CN 101752466 A CN101752466 A CN 101752466A
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- conductive layers
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Abstract
The invention discloses a light-emitting component which at least comprises a light-emitting laminated layer, a first transparent conductive oxidation layer positioned under the light-emitting laminated layer, a transparent insulating layer positioned under the first transparent conductive oxidation layer, a second transparent conductive oxidation layer positioned under the transparent insulating layer, and a metallic reflection layer positioned under the second transparent conductive oxidation layer, wherein an omni-directional reflector (ODR) layer is formed by the metallic reflection layer and the second transparent conductive oxidation layer, and ohmic contact is formed between the first transparent conductive oxidation layer and the light-emitting laminated layer, so that the light-emitting efficiency of the light-emitting component can be improved.
Description
Technical field
The present invention relates to a kind of luminescence component, particularly relate to a kind of luminescence component structure of insulation barrier layer (dielectricbarrier layer) between first oxidic, transparent, conductive layers and second oxidic, transparent, conductive layers that have.
Background technology
Light-emitting diode (light-emitting diode, LED) principle of luminosity is the energy difference that utilizes electronics to move between n N-type semiconductor N and p N-type semiconductor N, form with light discharges energy, such principle of luminosity is different from the principle of luminosity of incandescent lamp heating, so light-emitting diode is called as cold light source.In addition, light-emitting diode has advantages such as durability height, the life-span is long, light and handy, power consumption is low, and therefore illumination market is now placed high hopes for light-emitting diode, and it is considered as the illuminations of a new generation.
Fig. 1 is known LED core (die) structural representation, and as shown in Figure 1, known luminescence component 100 includes electrically-conductive backing plate 10; Be arranged at the metal gluing layer 12 on the electrically-conductive backing plate 10; Be positioned at comprehensive reflector 14 on the metal gluing layer (omni-directional reflector, ODR); Be positioned at the ohmic contact layer 15 on the comprehensive reflector 12, this ohmic contact layer 15 can be a transparent conductive material, as oxidic, transparent, conductive layers or thin metal; Be positioned at the luminous lamination 16 on the ohmic contact layer 15; And, be arranged at the electrode 18 on the luminous lamination 16.
In known luminescence component 100, luminous lamination 16 from top to bottom comprises first conductive-type semiconductor layer 160, luminescent layer 162 at least, and second conductive-type semiconductor layer 164.And comprehensive reflector 14 also comprises metallic reflector 140, and its material can be metal materials such as gold, silver; Low-index layer 142, its material can be silicon dioxide or tin indium oxide (Indium Tin Oxide, ITO), this comprehensive reflector 14 also comprises a plurality of metal ohmic contact points 144 (ohmic contact dot) in addition, it runs through above-mentioned low-index layer 142, and be electrically connected with metallic reflector 140 formation with ohmic contact layer 15 respectively, the conducting electric current has than the excellent electrical property feature luminescence component 100 thus.
Yet, in the manufacture process of above-mentioned known luminescence component 100, high-temperature technology makes the low-index layer 142 in ohmic contact layer 15 and the comprehensive reflector 14 react easily, cause the brightness of luminescence component 100 to descend: in addition, the metal ohmic contact point 144 that is provided with in order to make luminescence component 100 have the good conductive characteristic absorbs the light that luminescent layer 162 is sent easily, also causes the luminous efficiency of luminescence component 100 to reduce.
In addition, above-mentioned luminescence component 100 can also be connected with other combination of components further to form light-emitting device (light-emitting apparatus).Fig. 4 is known luminous device structure schematic diagram, and as shown in Figure 4, light-emitting device 600 comprises the inferior carrier (sub-mount) 60 with at least one circuit 602; At least one scolder 62 (solder) is positioned on above-mentioned carrier 60, by this scolder 62 above-mentioned luminescence component 100 is cohered and is fixed on time carrier 60 and the substrate 10 of luminescence component 100 is electrically connected with circuit 602 formation on time carrier 60; And electric connection structure 64 is with the electrode 18 of electric connection luminescence component 100 and the circuit 602 on time carrier 60; Wherein, above-mentioned inferior carrier 60 can be that lead frame (leadframe) or large scale are inlayed substrate (mounting substrate), with the circuit planning that makes things convenient for light-emitting device 600 and improve its radiating effect.
Summary of the invention
The present invention discloses a kind of luminescence component, at least comprise luminous lamination, be positioned at luminous lamination below first oxidic, transparent, conductive layers, be positioned at first oxidic, transparent, conductive layers below the transparent insulation barrier layer, be positioned at second oxidic, transparent, conductive layers of transparent insulation barrier layer below, and metallic reflector, wherein the metallic reflector and second oxidic, transparent, conductive layers form comprehensive reflector (omni-directional reflector, ODR), utilize first oxidic, transparent, conductive layers and luminous lamination to form ohmic contact, improve the luminous efficiency of luminescence component thus.
Another object of the present invention is to utilize extinction or the shading problem of transparent insulation barrier layer to avoid first oxidic, transparent, conductive layers, the second metal oxidic, transparent, conductive layers and metallic reflector in the high temperature manufacture process, to have an effect alternately and then take place.
Below cooperate appended accompanying drawing to illustrate in detail by specific embodiment, when the effect that is easier to understand purpose of the present invention, technology contents, characteristics and is reached.
Description of drawings
Fig. 1 is known LED core structural representation.
Fig. 2 is the structural representation of the embodiment of the invention.
Fig. 3 is the structural representation of another embodiment of the present invention.
Fig. 4 is known luminous device structure schematic diagram.
Description of reference numerals
100: luminescence component 10: electrically-conductive backing plate
12: metal gluing layer 14: comprehensive reflector
15: ohmic contact layer 16: luminous lamination
18: 160: the first conductive-type semiconductor layers of electrode
162: 164: the second conductive-type semiconductor layers of luminescent layer
140: metallic reflector 142: low-index layer
144: metal ohmic contact point 200: luminescence component
20: electrically-conductive backing plate 22: gluing layer
24: 26: the first oxidic, transparent, conductive layers in comprehensive reflector
28: luminous lamination 30: electrode
Oxidic, transparent, conductive layers 242 in 240: the second: metallic reflector
Conductive-type semiconductor layer 282 in 280: the first: luminescent layer
Conductive-type semiconductor layer 32 in 284: the second: the transparent insulation barrier layer
320: through hole 300: luminescence component
40: substrate 42: gluing layer
44: 46: the first oxidic, transparent, conductive layers in comprehensive reflector
48: luminous lamination 50: transparent insulation barrier layer
Oxidic, transparent, conductive layers 442 in 440: the second: metallic reflector
Conductive-type semiconductor layer 482 in 480: the first: luminescent layer
52: the first electrodes of 484: the second conductive-type semiconductor layers
Electrode 600 in 54: the second: light-emitting device
60: inferior carrier 602: circuit
62: scolder 64: electric connection structure
Embodiment
Following conjunction with figs. explanation embodiments of the invention.
Fig. 2 is the embodiments of the invention structural representation, as shown in Figure 2, luminescence component 200 comprises electrically-conductive backing plate 20, be arranged at gluing layer 22 on the electrically-conductive backing plate 20, be positioned at comprehensive reflector 24 on the gluing layer 22 (omni-directional reflector, ODR), be positioned at first oxidic, transparent, conductive layers 26 on the above-mentioned comprehensive reflector 24, be arranged at the luminous lamination 28 of first including transparent conducting oxide layer 26; And, be positioned at the electrode 30 on the luminous lamination 28; Wherein, above-mentioned comprehensive reflector 24 and 26 of first oxidic, transparent, conductive layers also comprise transparent insulation barrier layer 32, and comprehensive reflector 24 from top to bottom also comprises second oxidic, transparent, conductive layers 240 and metallic reflector 242.In addition, luminous lamination 28 from top to bottom comprises first conductive-type semiconductor layer 280, luminescent layer 282 at least, and second conductive-type semiconductor layer 284, wherein above-mentioned luminous lamination 28 can be selected from the semi-conducting material that material comprises aluminium (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As) or nitrogen III-V families such as (N), such as gallium nitride (GaN) series material, AlGaInP (AlGaInP) series material or GaAs (GaAs) material etc.; And the structure of luminescent layer 282 can be to be selected from single heterojunction structure (single heterostructure, SH), double-heterostructure (double heterostructure, DH), bilateral double-heterostructure (double-side doubleheterostructure, DDH) or multiple quantum trap (multi-quantum well, MQW).
In the present embodiment, the material of electrically-conductive backing plate 20 can be the semi-conducting material, for example zinc oxide ceramic materials such as (ZnO) of for example silicon (silicon) or for example combination of metal material such as copper, aluminium, molybdenum or above-mentioned material; The material of gluing layer 22 is selected from the alloy of indium, tin, gold, aluminium, silver and above-mentioned metal; The material of first oxidic, transparent, conductive layers 26 and second oxidic, transparent, conductive layers 240 is selected from tin indium oxide (IndiumTin Oxide, ITO), aluminum zinc oxide (Aluminum Zinc Oxide, AZO), cadmium tin, antimony tin, zinc oxide (ZnO), and material group that zinc-tin oxide constituted, wherein the crystallite dimension of first oxidic, transparent, conductive layers 26 (grain size), refractive index characteristics such as (reflective index) are different with second oxidic, transparent, conductive layers 240; In the present embodiment, the average grain size of first transparent oxide layer 26 is bigger compared to second oxidic, transparent, conductive layers 240, and the refractive index of first transparent oxide layer 26 is then less compared to second oxidic, transparent, conductive layers 240; Moreover the material of metallic reflector 242 can be indium (In), tin (Sn), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), tin (Pb), germanium (Ge), copper (Cu), nickel (Ni), beryllium gold (AuBe), germanium gold (AuGe), zinc impregnation gold (AuZn), tin lead high reflecting metals such as (PbSn); And the material of above-mentioned transparent insulation barrier layer 32 can be silicon dioxide (SiO
2), silicon nitride (SiN
x) or aluminium oxide (Al
2O
3) etc., its thickness is about 5 to 300nm.
In addition, in order to reach the excellent electrical property conducting, also comprise one or more through hole 320 on the transparent insulation barrier layer 32 in the present embodiment, wherein first oxidic, transparent, conductive layers 26 is inserted among the above-mentioned through hole 320, and contact with second oxidic, transparent, conductive layers 240 and form electric connection, in the present embodiment, the area of through hole 320 is less than 40 percent of transparent insulation barrier layer 32 areas, and preferred person is less than 5 percent of transparent insulation barrier layer 32 areas.
In the present embodiment, owing to utilize first oxidic, transparent, conductive layers 26 to form ohmic contact as ohmic contact layer and luminous lamination 28, in addition, the first above-mentioned oxidic, transparent, conductive layers 26 also be positioned at above-mentioned comprehensive reflector 24 on second oxidic, transparent, conductive layers 240 form and be electrically connected, therefore it is electrical to use light absorbent to strengthen luminescence component 200, also reduces the absorbed chance of light that luminescent layer 282 is sent; Moreover, because 240 of second oxidic, transparent, conductive layers on first oxidic, transparent, conductive layers 26 and the comprehensive reflector 24 have transparent insulation barrier layer 32, in order to prevent that first oxidic, transparent, conductive layers 26 and second oxidic, transparent, conductive layers 240 hot environment in making the luminescence component process from reacting, and improves the brightness of luminescence component 200 thus.
Fig. 3 is the another embodiment of the present invention structural representation, as shown in Figure 3, luminescence component 300 comprises substrate 40, be arranged at gluing layer 42 on the substrate 40, be positioned at comprehensive reflector 44 (the omni-directional reflector on the gluing layer 42, ODR), be positioned at first oxidic, transparent, conductive layers 46 on the above-mentioned comprehensive reflector 44, and, be arranged at the luminous lamination 48 of first including transparent conducting oxide layer 46; Wherein, above-mentioned comprehensive reflector 44 and 46 of first oxidic, transparent, conductive layers also comprise transparent insulation barrier layer 50, and comprehensive reflector 44 from top to bottom also comprises second oxidic, transparent, conductive layers 440 and metallic reflector 442.
In addition, luminous lamination 48 from top to bottom comprises first conductive-type semiconductor layer 480, luminescent layer 482 at least, and second conductive-type semiconductor layer 484, in above-mentioned luminous lamination 48, has the surface that exposes second conductive-type semiconductor layer 484; And first electrode 52 and second electrode 54 lay respectively at first conductive-type semiconductor layer 480 and expose on the surface of second conductive-type semiconductor layer 484, wherein above-mentioned luminous lamination 28 can be selected from the semi-conducting material that material comprises aluminium (Al), gallium (Ga), indium (In), phosphorus (P), arsenic (As) or nitrogen III-V families such as (N), such as gallium nitride (GaN) series material, AlGaInP (AlGaInP) series material or GaAs (GaAs) material etc.; And the structure of luminescent layer 282 can be selected from single heterojunction structure (single heterostructure, SH), double-heterostructure (double heterostructure, DH), bilateral double-heterostructure (double-side double heterostructure, DDH) or multiple quantum trap (multi-quantum well, MQW).
In the present embodiment, substrate 40 can be for example silicon (silicon), GaAs semi-conducting material, aluminium nitride (AlN), aluminium oxide (Al such as (GaAs)
2O
3) wait the material of metal material such as ceramic material or copper, aluminium, molybdenum or above-mentioned material combination; 42 of gluing layers can be alloy or polyimides (PI), the benzocyclobutenes (BCB) of indium, tin, gold, aluminium, silver, above-mentioned metal and cross fluorine cyclobutane materials such as (PFCB); The material of first oxidic, transparent, conductive layers 46 and second oxidic, transparent, conductive layers 440 is selected from tin indium oxide (Indium Tin Oxide, ITO), aluminum zinc oxide (Aluminum Zinc Oxide, AZO), cadmium tin, antimony tin, zinc oxide (ZnO), and the material group that zinc-tin oxide constituted, the crystallite dimension of first oxidic, transparent, conductive layers 46 (grain size) wherein, refractive index characteristics such as (reflective index) is different with second oxidic, transparent, conductive layers 440, in the present embodiment, the average grain size of first transparent oxide layer 46 is bigger compared to second oxidic, transparent, conductive layers 440, and the refractive index of first transparent oxide layer 46 is then less compared to second oxidic, transparent, conductive layers 440; Moreover the material of metallic reflector 442 can be indium (In), tin (Sn), aluminium (Al), gold (Au), platinum (Pt), zinc (Zn), silver (Ag), titanium (Ti), tin (Pb), germanium (Ge), copper (Cu), nickel (Ni), beryllium gold (AuBe), germanium gold (AuGe), zinc impregnation gold (AuZn), tin lead high reflecting metals such as (PbSn); And the material of above-mentioned transparent insulation barrier layer 50 can be silicon dioxide (SiO
2), silicon nitride (SiN
x) or aluminium oxide (Al
2O
3) etc., its thickness is about 5 to 300nm.
In the present embodiment, because 440 of second oxidic, transparent, conductive layers in first oxidic, transparent, conductive layers 46 and the comprehensive reflector 44 have transparent insulation barrier layer 50, in order to prevent that first oxidic, transparent, conductive layers 46 and second oxidic, transparent, conductive layers 440 hot environment in making the luminescence component process from reacting, and improves the brightness of luminescence component 300 thus.
Above-described embodiment only is explanation technological thought of the present invention and characteristics; its purpose makes those skilled in the art can understand content of the present invention and is implementing according to this; when can not with qualification protection scope of the present invention; promptly equivalent variations or the modification of doing according to disclosed spirit generally must be encompassed in protection scope of the present invention.
Claims (10)
1. luminescence component comprises at least:
Luminous lamination;
First oxidic, transparent, conductive layers semiconductor laminatedly is connected and forms ohmic contact with this;
The transparent insulation barrier layer is connected with this first oxidic, transparent, conductive layers;
Second oxidic, transparent, conductive layers is connected with this transparent insulation barrier layer; And
Metallic reflector is connected with this second oxidic, transparent, conductive layers, and wherein this second oxidic, transparent, conductive layers and this metallic reflector form comprehensive reflector.
2. luminescence component as claimed in claim 1 also comprises substrate, is connected with this comprehensive reflector.
3. luminescence component as claimed in claim 2 also comprises gluing layer, between this substrate and this comprehensive reflector.
4. luminescence component as claimed in claim 1, wherein this transparent insulation barrier layer has at least one through hole, and this second oxidic, transparent, conductive layers is filled in this through hole and with this first oxidic, transparent, conductive layers and contacts and form electrical connection.
5. luminescence component as claimed in claim 4, wherein the area of this through hole is less than 40% of this transparent insulation barrier layer area.
6. luminescence component as claimed in claim 1, wherein this first oxidic, transparent, conductive layers has first refractive index, and this second oxidic, transparent, conductive layers has second refractive index, wherein this first refractive index and this second refractive index are different.
7. luminescence component as claimed in claim 1, wherein the material of this first oxidic, transparent, conductive layers and this second oxidic, transparent, conductive layers can be one or more material, and it is selected from tin indium oxide, aluminum zinc oxide, cadmium tin, antimony tin, zinc oxide, reaches the material group that zinc-tin oxide constituted.
8. luminescence component as claimed in claim 1, wherein the material of this transparent insulation barrier layer is silicon dioxide, silicon nitride or aluminium oxide.
9. luminescence component as claimed in claim 1, the material of this metal level are high reflecting metal or its alloys such as indium, tin, aluminium, gold, platinum, zinc, silver, titanium, tin, germanium, copper, nickel, beryllium gold, germanium gold, zinc impregnation gold, tin lead.
10. luminescence component as claimed in claim 3, this gluing layer are selected from least a material in indium, tin, gold, aluminium, silver and alloy thereof, polyimides, benzocyclobutene and the constituent material group of mistake fluorine cyclobutane institute.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101778202A CN101752466B (en) | 2008-12-01 | 2008-12-01 | Light-emitting component |
| US12/620,305 US8143636B2 (en) | 2008-11-18 | 2009-11-17 | Light-emitting device |
| US13/429,852 US8692273B2 (en) | 2008-11-18 | 2012-03-26 | Light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101778202A CN101752466B (en) | 2008-12-01 | 2008-12-01 | Light-emitting component |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210086043.7A Division CN102610726B (en) | 2008-12-01 | 2008-12-01 | Light-emitting assembly |
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| Publication Number | Publication Date |
|---|---|
| CN101752466A true CN101752466A (en) | 2010-06-23 |
| CN101752466B CN101752466B (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101778202A Active CN101752466B (en) | 2008-11-18 | 2008-12-01 | Light-emitting component |
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|---|---|
| CN (1) | CN101752466B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300055A (en) * | 2013-07-17 | 2015-01-21 | 晶元光电股份有限公司 | Light-emitting element |
| CN113097358A (en) * | 2021-03-31 | 2021-07-09 | 扬州乾照光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN114464710A (en) * | 2021-12-27 | 2022-05-10 | 厦门士兰明镓化合物半导体有限公司 | LED chip and preparation method thereof |
-
2008
- 2008-12-01 CN CN2008101778202A patent/CN101752466B/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104300055A (en) * | 2013-07-17 | 2015-01-21 | 晶元光电股份有限公司 | Light-emitting element |
| CN104300055B (en) * | 2013-07-17 | 2019-05-10 | 晶元光电股份有限公司 | Light-emitting component |
| CN110265517A (en) * | 2013-07-17 | 2019-09-20 | 晶元光电股份有限公司 | Light-emitting component |
| CN110265517B (en) * | 2013-07-17 | 2024-03-29 | 晶元光电股份有限公司 | Light-emitting element |
| CN113097358A (en) * | 2021-03-31 | 2021-07-09 | 扬州乾照光电有限公司 | Light emitting diode and manufacturing method thereof |
| CN114464710A (en) * | 2021-12-27 | 2022-05-10 | 厦门士兰明镓化合物半导体有限公司 | LED chip and preparation method thereof |
| CN114464710B (en) * | 2021-12-27 | 2023-08-08 | 厦门士兰明镓化合物半导体有限公司 | LED chip and preparation method thereof |
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| Publication number | Publication date |
|---|---|
| CN101752466B (en) | 2012-05-30 |
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