CN110243396A - Bimodulus sensing unit and dual mode transducer - Google Patents
Bimodulus sensing unit and dual mode transducer Download PDFInfo
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- CN110243396A CN110243396A CN201910549278.7A CN201910549278A CN110243396A CN 110243396 A CN110243396 A CN 110243396A CN 201910549278 A CN201910549278 A CN 201910549278A CN 110243396 A CN110243396 A CN 110243396A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
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Abstract
The invention discloses bimodulus sensing unit and dual mode transducer, bimodulus sensing unit includes shielded layer, pressure sensitive conductive layer, capacitive sensing layer and flexible convex aliquation；Shielded layer is fixedly connected with pressure sensitive conductive layer, shielding layer grounding setting；Pressure sensitive conductive layer includes conducting electrode and piezoresistance sensitivity layer；Piezoresistance sensitivity layer is equipped with raised micro-structure；Capacitive sensing layer includes the first flexible substrates, emission electrode and receiving electrode；Emission electrode, receiving electrode are fixed on the bottom surface of the first flexible substrates, and lower leaf is arranged on emission electrode and receiving electrode, and connection is connected with raised micro-structure in emission electrode；Flexible convex aliquation is fixedly connected with the first flexible substrates, and the upper surface of flexible convex aliquation is equipped with stress and collects protrusion.Bimodulus sensing unit is provided simultaneously with close to the function of feeling with tactile sensing；Dual mode transducer is arranged by multiple bimodulus sensing unit matrixes, and is connected between each other by flexible substrates, has good flexibility, internal wiring is succinct.
Description
Technical field
The invention belongs to robotic sensor technology fields, and in particular to bimodulus sensing unit and dual mode transducer.
Background technique
Existing cooperation robot sensing system all includes vision and touch sensor substantially, and touch sensing system is mainly
The stress in the case of contacting and its distributed intelligence are provided, visual sensing system mainly provides orientation capture and object distance is believed
Breath.However on the one hand, additional 3D cam device is needed, not only increases cost, and in processing data bandwidth and vision
Algorithm it is more demanding；On the other hand, existence is away from lesser situation in some application scenarios, and visual sensor is easy at this time
By mechanical arm block can not effective lock-on range information, and mechanical arm does not touch object yet simultaneously, and touch sensor can not yet
It is normal to obtain object information, it is " blind area " of sensor-based system.So robot electronic skin is with vision, haptic capabilities
It is also desirable to there is the miscellaneous function close to perception, safe human-computer interaction task could be really realized.
The Hyung-Kew Lee of South Korea Seoul university describes disclosed in 2009 a kind of capacitive close in document
It is realized using the interdigitated electrodes that upper and lower level is distributed by connecting different detecting electrodes with the sensor array of tactile
Close to the intersection plate condenser type tactile sensing of sensing and up-down structure, the switching of both modes needs multiple coplanar capacitance formula
Miscellaneous control circuit realizes that top-bottom cross electrode structure will lead to lead and circuit is complicated, influences the soft of integral sensors
Property, while can also cause the generation of parasitic capacitance, cause measuring signal to be drifted about, furthermore the dielectric layer of capacity plate antenna is empty
Gas, will lead to pressure signal range ability it is small low with sensitivity the problems such as.
South Korea Jong-Hyun Ahn et al. (Kang, Kim et al.2017) has invented a kind of 3D touching based on graphene
Sensor is touched, by the distance of capacitance sense human body and the general profile of contact object, can be directly mounted at deformable
Position has certain draftability.It is not high but there are sensitivity under contact mode, the problems such as detection range is relatively narrow.
Therefore, it is necessary to a kind of new technologies to solve the complicated, measurement accuracy close to the circuit of feel and tactile in the prior art
It is low, sensitivity is low, the relatively narrow problem of detection range.
Summary of the invention
To solve the above problem in the prior art, the present invention provides bimodulus sensing unit and dual mode transducer, electricity
Road is succinct, measurement accuracy, detection range are larger, has high sensitivity.
The invention adopts the following technical scheme:
Bimodulus sensing unit, including from lower to upper successively lamination setting shielded layer, pressure sensitive conductive layer, capacitive sensing layer and
Flexible convex aliquation；
The upper surface of the shielded layer is fixedly connected with the pressure sensitive conductive layer, shielding layer grounding setting；
The pressure sensitive conductive layer includes conducting electrode and the piezoresistance sensitivity layer of connection is connected with the conducting electrode；The pressure
Resistance sensitive layer is made of pressure sensitive conductive material, and the upper surface of piezoresistance sensitivity layer is equipped with several raised micro-structures in matrix distribution；
The capacitive sensing layer includes the first flexible substrates, emission electrode and receiving electrode；The emission electrode receives electricity
Pole is fixed on the bottom surface of first flexible substrates, and lower leaf is arranged on emission electrode and receiving electrode, the emission electrode
Connection is connected with the upper surface of the raised micro-structure；
The flexible convex aliquation is fixedly connected with the upper surface of first flexible substrates, the upper end of the flexible convex aliquation
The position that face corresponds to the piezoresistance sensitivity layer is equipped with stress and collects protrusion.
As the further improvement of technical solution of the present invention, the conducting electrode includes first electrode main body and from described
The first connecting pin that one electrode body extends；The second flexible base is additionally provided between the pressure sensitive conductive layer and the shielded layer
Bottom；The conducting electrode is fixed on the bottom of the piezoresistance sensitivity layer, and the conducting electrode is embedded in second flexible substrates.
As the further improvement of technical solution of the present invention, the conducting electrode include in frame shape second electrode main body and
The second connecting pin being connect with the second electrode main body；The conducting electrode ring is located at the periphery of the piezoresistance sensitivity layer simultaneously
It is conducted and connect with the piezoresistance sensitivity layer.
As the further improvement of technical solution of the present invention, the emission electrode includes third electrode body and with described
The third connecting pin of three electrode bodies connection, the position phase of the position of the third electrode body and the first electrode main body
It is corresponding；The receiving electrode includes the 4th electrode body in frame shape and the 4th connection connecting with the 4th electrode body
Foot；The 4th electrode body ring is located at the top of the third electrode body, the third connecting pin and the 4th connecting pin phase
It is mutually vertical.
As the further improvement of technical solution of the present invention, adopted between the 4th electrode body and the piezoresistance sensitivity layer
Thickness with insulation silica gel packaging, the insulation silica gel is equal with the raised height of micro-structure, the width for the silica gel that insulate and
The width of the frame shape of 4th electrode body is equal.
As the further improvement of technical solution of the present invention, the shape of the protrusion micro-structure is taper, truncated cone-shaped, round
Platform shape or hemispherical.
As the further improvement of technical solution of the present invention, the taper/truncated cone-shaped taper is 30 °~90 °.
As the further improvement of technical solution of the present invention, the piezoresistance sensitivity layer and the raised micro-structure one at
Type.
As the further improvement of technical solution of the present invention, the section that the stress collects protrusion is trapezoidal.
Dual mode transducer, based on above-mentioned bimodulus sensing unit, including multiple bimodulus sensing units, each bimodulus
Sensing unit is arranged in matrix, and the first flexible substrates, the second flexible substrates of each bimodulus sensing unit are connected respectively；Respectively
The emission electrode of the bimodulus sensing unit is connected with each other bunchiness, the reception electricity of each bimodulus sensing unit along first direction
Pole is connected with each other bunchiness in a second direction, and the first direction and second direction are perpendicular.
Compared with prior art, the invention has the benefit that
1. in bimodulus sensing unit of the invention, the emission electrode and receiving electrode of capacitive sensing layer constitute coplanar electricity
Hold, can be realized close to feel function；Pressure sensitive conductive layer has piezoresistance sensitivity layer, is made of piezoresistive material, has tactile
The function of sensing, and piezoresistance sensitivity layer is provided with raised micro-structure, can collect contact stress, enhance its tactile pressure
Sensitivity and measurement range；By above-mentioned capacitive sensing layer and piezoresistance sensitivity layer, it is provided simultaneously with close feel and tactile sensing function
Energy；Furthermore capacitive sensing layer and piezoresistance sensitivity layer share conducting electrode, simplify the complexity of circuit；Shielded layer, pressure sensitive conductive
The layer arrangement mode vertical with capacitive sensing layer can increase spatial resolution.
2. in dual mode transducer of the invention, using multiple bimodulus sensing units that matrix is distributed, each bimodulus sensing is single
The emission electrode of member is connected with each other bunchiness, the receiving electrode of each bimodulus sensing unit phase in a second direction along first direction
Connect bunchiness, can very easily realize array by FPCB flexible printing technology.
Detailed description of the invention
Technology of the invention is described in further detail with reference to the accompanying drawings and detailed description:
Fig. 1 is the sectional view of piezoresistance sensitivity layer；
Fig. 2 is the top view of piezoresistance sensitivity layer；
Fig. 3 is the sectional view when first electrode main body of bimodulus sensing unit is circle or is square；
Fig. 4 is top view when first electrode main body is square；
The top view that Fig. 5 is first electrode main body when being round；
Fig. 6 be bimodulus sensing unit second electrode main body be annulus or square frame when sectional view；
Fig. 7 be second electrode main body be annulus when top view；
Fig. 8 is top view when second electrode main body is square；
Fig. 9 is that third electrode body is top view round, when the 4th electrode body is annulus；
Figure 10 is top view when third electrode body is square shape, the 4th electrode body is square frame；
Figure 11 is emission electrode and receiving electrode schematic diagram arranged in arrays in dual mode transducer；
Figure 12 is emission electrode and when receiving electrode arranged in arrays another schematic diagram in dual mode transducer；
Figure 13 is line chart of the capacitive sensing layer for same object with the capacitance variations close to distance；
Figure 14 is that have raised micro-structure and the line chart without the protrusion micro-structure with the relative resistance change of pressure.
Appended drawing reference:
1- piezoresistance sensitivity layer；11- protrusion micro-structure；
2- shielded layer；
3- pressure sensitive conductive layer；31- conducting electrode；311- first electrode main body；The first connecting pin of 312-；313- second electrode
Main body；The second connecting pin of 314-；The second flexible substrates of 32-；33- insulation silica gel；
4- capacitive sensing layer；The first flexible substrates of 41-；42- emission electrode；421-third electrode bodies；422- third connects
Pin；43- receiving electrode；The 4th electrode body of 431-；The 4th connecting pin of 432-；
5- flexible convex aliquation；51- stress collects protrusion.
Specific embodiment
It is carried out below with reference to technical effect of the embodiment and attached drawing to design of the invention, specific structure and generation clear
Chu, complete description, to be completely understood by the purpose of the present invention, scheme and effect.It should be noted that in the feelings not conflicted
Under condition, the features in the embodiments and the embodiments of the present application be can be combined with each other.The identical attached drawing used everywhere in attached drawing
Label indicates the same or similar part.
It should be noted that unless otherwise specified, when a certain feature referred to as " fixation ", " connection " are in another feature,
It can directly fix, be connected to another feature, and can also fix, be connected to another feature indirectly.In addition,
The descriptions such as upper and lower, left and right used in the present invention are only the mutual position relative to each component part of the present invention in attached drawing
It sets for relationship.
Referring to figs. 1 to Figure 14, the present invention provides bimodulus sensing unit and dual mode transducers.
Wherein, bimodulus sensing unit includes the shielded layer 2 that successively lamination is arranged from lower to upper, pressure sensitive conductive layer 3, capacitor sense
Answer layer 4 and flexible convex aliquation 5.
As illustrated in figures 4 and 7, the upper surface of the shielded layer 2 is fixedly connected with conductive pressure sensitive conductive layer 3, and shielded layer 2 is grounded
Setting.Wherein, shielded layer 2 uses rectangular copper foil, and thickness mainly reduces the formation of parasitic capacitance at 50-100 μm.
The pressure sensitive conductive layer 3 includes conducting electrode 31 and the piezoresistance sensitivity layer 1, as shown in Figures 1 to 8.
Piezoresistance sensitivity layer 1 is integrally formed by pressure sensitive conductive material and is prepared such as Fig. 1 and Fig. 2, the upper table of piezoresistance sensitivity layer
Face is equipped with several raised micro-structures 11 in matrix distribution, and the protrusion micro-structure 11 is in matrix on the piezoresistance sensitivity layer 1
Distribution, the matrix distribution of preferably 3*3, i.e., raised micro-structure 11 is equipped with 9, and arranging is rectangle, and the every of rectangle is equipped on one side
3 raised micro-structures 11.When contact pressure changes, then resistance changes, and can be used in making touch sensor.And
And the setting of raised micro-structure 11, it is improved for the sensitivity of pressure change.
Wherein, the shape of the raised micro-structure 11 is taper, truncated cone-shaped, truncated cone-shaped or hemispherical, preferably, choosing
It is selected as taper, it is more sensitive for the variation of contact pressure.Wherein, the taper/truncated cone-shaped taper is 30 °
~90 °, can choose is 45 °, 60 ° or 75 °.With the protrusion micro-structure (micro-structure) and without the protrusion micro-structure (without micro-
Structure) it is as shown in figure 14 with the relative resistance change of pressure, it can be seen that and its resistance is for pressure when having the protrusion micro-structure
It is very sensitive.Piezoresistance sensitivity layer 1 and the conducting electrode 31 are conducted, and set between the conducting electrode 31 and the shielded layer 2
There are the second flexible substrates 32.Conducting electrode 31 is used for transmission piezoresistance sensitivity layer 1 for the signal of the resistance variations of contact pressure.
Wherein, there are two types of set-up modes, both of which can be realized conducting electrode 31 to piezoresistance sensitivity for conducting electrode 31
The transmission of the pressure drag electric signal of layer 1.
One of set-up mode is as shown in Figures 3 to 5, and conducting electrode 31 includes the first electrode of rounded/square
Main body 311 and the first connecting pin 312 extended from the first electrode main body 311；The conducting electrode 31 is fixed on described
The bottom of piezoresistance sensitivity layer 1, the conducting electrode 31 are embedded in second flexible substrates 32.In this mode, conducting electrode
31 are located at the lower section of piezoresistance sensitivity layer 1 and piezoresistance sensitivity layer 1 is conducted.
Another set-up mode of conducting electrode 31 is as shown in Figure 6 to 8, and the conducting electrode 31 includes for annulus/just
The second electrode main body 313 of box and the second connecting pin 314 being connect with the second electrode main body 313；The conducting electrode
31 rings are located at the periphery of the piezoresistance sensitivity layer 1 and are connected with the piezoresistance sensitivity layer 1.In this mode, conducting electrode 31
The periphery that piezoresistance sensitivity layer 1 is arranged in is conducted with piezoresistance sensitivity layer 1.
It is connect to further enhance conducting electrode 31 with the conduction of piezoresistance sensitivity layer 1, conducting electrode 31 and piezoresistance sensitivity
It is adhesively fixed between layer 1 by SPI 05001-AB conductive silver glue, pressure drag electric signal is transmitted to greatest extent.
Wherein, such as Fig. 3, Fig. 6, Fig. 9 and Figure 10, the capacitive sensing layer 4 includes the first flexible substrates 41, emission electrode
42 and receiving electrode 43；The emission electrode 42, receiving electrode 43 are fixed on the bottom surface of first flexible substrates 41, and send out
Lower leaf is arranged on radio pole 42 and receiving electrode 43, i.e. the two is interleaved up and down not on the same horizontal plane, but due to
The thickness of the two is all very thin, therefore the two is almost in the same plane, forms one group of coplanar capacitance.The transmitting electricity
Connection is connected with the upper surface of the raised micro-structure 11 in pole 42.
The emission electrode 42 and receiving electrode 43 of capacitive sensing layer 4 constitute coplanar capacitance, can be realized close to feel function.
Emission electrode 42 is fixedly connected with the upper surface of raised micro-structure 11, and emission electrode 42 passes through the conduction of piezoresistance sensitivity layer 1 and bottom
Electrode 31 forms connection, i.e. capacitive sensing layer 4 and piezoresistance sensitivity layer 1 shares conducting electrode 31, simplify the complexity of circuit.
Wherein, the emission electrode 42 include it is rounded/square third electrode body 421 and with the third electrode
The third connecting pin 422 that main body 421 connects, the position of the third electrode body 421 and the first electrode main body 311
Position is corresponding.
The receiving electrode 43 include for the 4th electrode body 431 of annulus/square frame and with the 4th electrode body
4th connecting pin 432 of 431 connections.
4th electrode body, 431 ring is located at the top of the third electrode body 421, the third connecting pin 422
It is mutually perpendicular to the 4th connecting pin 432；Using insulation silica gel between 4th electrode body 431 and the piezoresistance sensitivity layer 3
The thickness of 33 encapsulation, the insulation silica gel 33 is equal with the raised height of micro-structure 11, the width of insulation silica gel 33 and the
Annulus/square frame width of four electrode bodies 431 is equal.
In really Scheme Choice, the shape of emission electrode 42 and receiving electrode 43 be selected as it is compatible, i.e., when
When three electrode bodies 421 are round, the 4th electrode body 431 is selected as annulus；When third electrode body 421 is square,
4th electrode body 431 is selected as square frame.
Capacitive sensing layer is as shown in figure 13 with the capacitance variations close to distance for same object.
Wherein, flexible convex aliquation 5, as shown in Figure 3 and Figure 6, it is quick that the upper surface of the flexible convex aliquation 5 corresponds to the pressure drag
The position for feeling layer 1 is equipped with stress and collects protrusion 51, and the section that the stress collects protrusion 51 is trapezoidal.Flexible convex aliquation 5 is answered
Power collects protrusion 51, and the pressure that can be touched concentrate and is transferred to piezoresistance sensitivity layer 1 through capacitive sensing layer 4, cooperates
The lug boss of piezoresistance sensitivity layer 1 has substantially increased sensitivity and measurement range of the bimodulus sensing unit for pressure.It is flexible
Convexity layer 5 is one of PDMS material, Ecoflex material, SEBS material or TPU material, preferably PDMS.Flexible projection
Layer 5 can not only play the role of conduction and concentrate pressure, while also to capacitive sensing layer 4 to insulation isolation and protective effect.
Based on above-mentioned structure, this bimodulus sensing unit has been provided simultaneously with close feel and tactile sensing function, the two mode
It can work at the same time, high sensitivity, and wire laying mode is very succinct.
The present invention also provides dual mode transducers, and based on above-mentioned bimodulus sensing unit, the bimodulus sensing unit is equipped with
Multiple and arrange in matrix, the first flexible substrates 41, the second flexible substrates 32 of each bimodulus sensing unit are connected respectively,
First flexible substrates 41 of i.e. two neighboring bimodulus sensing unit are connected with each other；The second of i.e. two neighboring bimodulus sensing unit
Flexible substrates 32 are connected with each other.By two sheets of flexible substrate, the flexibility of entire dual mode transducer is realized.Specifically first is flexible
Substrate 41, the second flexible substrates 32 are FPCB, and material is clear polyimides (CPI) or poly terephthalic acid dimethyl ester
(PET), with a thickness of 50~100 μm, preferably CPI, 50 μm of thickness.
The emission electrode 42 of each bimodulus sensing unit is connected with each other bunchiness along first direction, and each bimodulus sensing is single
The receiving electrode 43 of member is connected with each other bunchiness in a second direction, and the first direction and second direction are perpendicular, such as Figure 12 and figure
Shown in 13.In the dual mode transducer, each bimodulus sensing unit is distributed in matrix, and the emission electrode of each bimodulus sensing unit
42 are connected with each other bunchiness along first direction, and the receiving electrode 43 of each bimodulus sensing unit is interconnected in a second direction
String can very easily realize that array, manufacture craft require lower by FPCB flexible printing technology.
Other contents of bimodulus sensing unit and dual mode transducer of the present invention are no longer superfluous herein referring to the prior art
It states.
The above described is only a preferred embodiment of the present invention, be not intended to limit the present invention in any form, therefore
Without departing from the technical solutions of the present invention, according to the technical essence of the invention it is to the above embodiments it is any modification,
Equivalent variations and modification, all of which are still within the scope of the technical scheme of the invention.
Claims (10)
1. bimodulus sensing unit, it is characterised in that: including from lower to upper successively lamination setting shielded layer, pressure sensitive conductive layer, electricity
Hold inductive layer and flexible convex aliquation；
The upper surface of the shielded layer is fixedly connected with the pressure sensitive conductive layer, shielding layer grounding setting；
The pressure sensitive conductive layer includes conducting electrode and the piezoresistance sensitivity layer of connection is connected with the conducting electrode；The pressure drag is quick
Sense layer is made of pressure sensitive conductive material, and the upper surface of piezoresistance sensitivity layer is equipped with several raised micro-structures in matrix distribution；
The capacitive sensing layer includes the first flexible substrates, emission electrode and receiving electrode；The emission electrode, receiving electrode are solid
It is scheduled on the bottom surface of first flexible substrates, and lower leaf is arranged on emission electrode and receiving electrode, the emission electrode and institute
State the upper surface conducting connection of raised micro-structure；
The flexible convex aliquation is fixedly connected with the upper surface of first flexible substrates, the upper surface pair of the flexible convex aliquation
It answers the position of the piezoresistance sensitivity layer to be equipped with stress and collects protrusion.
2. bimodulus sensing unit according to claim 1, it is characterised in that: the conducting electrode includes first electrode main body
With the first connecting pin extended from the first electrode main body；Is additionally provided between the pressure sensitive conductive layer and the shielded layer
Two flexible substrates；The conducting electrode is fixed on the bottom of the piezoresistance sensitivity layer, and the conducting electrode insertion described second is soft
Property substrate.
3. bimodulus sensing unit according to claim 1, it is characterised in that: the conducting electrode includes second in frame shape
Electrode body and the second connecting pin being connect with the second electrode main body；The conducting electrode ring is located at the piezoresistance sensitivity layer
Periphery and being conducted with the piezoresistance sensitivity layer connect.
4. bimodulus sensing unit according to claim 2, it is characterised in that: the emission electrode includes third electrode body
The third connecting pin being connect with the third electrode body, the position of the third electrode body and the first electrode main body
Position it is corresponding；The receiving electrode include the 4th electrode body in frame shape and connect with the 4th electrode body the
Four connecting pins；The 4th electrode body ring is located at the top of the third electrode body, and the third connecting pin and the 4th connect
Pin is mutually perpendicular to.
5. bimodulus sensing unit according to claim 4, it is characterised in that: the 4th electrode body and the pressure drag are quick
Feel using insulation silica gel packaging between layer, the thickness of the insulation silica gel is equal with the raised height of micro-structure, insulating silicon
The width of glue is equal with the width of frame shape of the 4th electrode body.
6. bimodulus sensing unit according to claim 1, it is characterised in that: it is described protrusion micro-structure shape be taper,
Truncated cone-shaped, truncated cone-shaped or hemispherical.
7. bimodulus sensing unit according to claim 6, it is characterised in that: the taper/truncated cone-shaped taper
It is 30 °~90 °.
8. bimodulus sensing unit according to claim 1, it is characterised in that: the piezoresistance sensitivity layer and the micro- knot of protrusion
Structure is integrally formed.
9. bimodulus sensing unit according to claim 1, it is characterised in that: the stress collects the section of protrusion in ladder
Shape.
10. dual mode transducer is based on bimodulus sensing unit as claimed in any one of claims 1-9 wherein, it is characterised in that: packet
Multiple bimodulus sensing units are included, each bimodulus sensing unit is arranged in matrix, and the first of each bimodulus sensing unit is flexible
Substrate, the second flexible substrates are connected respectively；The emission electrode of each bimodulus sensing unit is connected with each other along first direction
The receiving electrode of bunchiness, each bimodulus sensing unit is connected with each other bunchiness, the first direction and second party in a second direction
To perpendicular.
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