CN110233964A - A kind of anti-shaking method applied to TDI cmos image sensor - Google Patents

A kind of anti-shaking method applied to TDI cmos image sensor Download PDF

Info

Publication number
CN110233964A
CN110233964A CN201910454957.6A CN201910454957A CN110233964A CN 110233964 A CN110233964 A CN 110233964A CN 201910454957 A CN201910454957 A CN 201910454957A CN 110233964 A CN110233964 A CN 110233964A
Authority
CN
China
Prior art keywords
tdi
optical signal
stage
electric capacity
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910454957.6A
Other languages
Chinese (zh)
Inventor
高静
张宝帅
聂凯明
徐江涛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin University
Original Assignee
Tianjin University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin University filed Critical Tianjin University
Priority to CN201910454957.6A priority Critical patent/CN110233964A/en
Publication of CN110233964A publication Critical patent/CN110233964A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/54Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60Control of cameras or camera modules
    • H04N23/68Control of cameras or camera modules for stable pick-up of the scene, e.g. compensating for camera body vibrations
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The present invention discloses a kind of anti-shaking method applied to TDI cmos image sensor, comprising: the single-stage optical signal that single-stage reservoir reads single-stage reservoir is stored in compensating electric capacity, while tradition TDI accumulation is carried out in TDI accumulator;TDI accumulator calculates single-stage optical signal difference and optical signal difference is added in cumulative capacitor, obtains optical signal total variances, and obtain resultant signal using the optical signal total variances and export.The present invention can effectively remove influence of the residual motion to imaging effect, so as to obtain the optical signal of a relative ideal, to greatly improve image quality.

Description

A kind of anti-shaking method applied to TDI cmos image sensor
Technical field
The present invention relates to cmos image sensor technical fields, more particularly to applied to TDI cmos image sensor Anti-shaking method.
Background technique
As CMO technology continues to develop, time delays integral TDI (Time Delay Integration, TDI) is applied In cmos image sensor.Fig. 1 is the imaging mode of traditional TDI cmos image sensor.By taking level Four TDI as an example, four pictures Plain stage direction along ng a path arrangement, t1, t2, t3 and t4 respectively indicate different location of the imaging sensor in continuous time.Four The TDI imaging sensor of grade is successively imaged object A.In t1, object A is incident upon at first pixel in column, generates light Signal A1.As camera is mobile, in t2, object A generates an optical signal in second pixel.A2 indicates the first two pixel The optical signal summation of middle acquisition.In t3, third optical signal is produced in third pixel, therefore A3 is indicated from first three The optical signal summation of pixel.In t4, the 4th pixel generates another optical signal, and A4 is that four pixels generate the total of optical signal With.From the point of view of whole process, is not exported directly from the optical signal of each pixel collection, but be transferred to the pixel of next stage In, it is clear that n grades of TDI imaging sensor can extend n times of effective integral time, to improve signal-to-noise ratio.This technical feasibility It establishes on the case where sensor scanning direction and orbiting direction are consistent, but due to the factors shadow such as external environment It rings, is especially applied in remote imaging systems (such as satellite) in TDI cmos image sensor, the satellite on track is sometimes It is influenced by random perturbation, flexible internal component or external module environment keep camera motion no longer stable, flight stability It will receive the influence of shake, random perturbation includes a large amount of harmonic vibration (sine wave).As shown in Fig. 2, harmonic vibration can introduce Residual motion across orbital direction, scanning motion produce across track movement, cause image fuzzy and distortion.
Summary of the invention
The object of the present invention is to provide a kind of anti-shaking methods applied to TDI cmos image sensor, to solve tradition TDI only the optical signal of pixel is simply accumulated in together, in the presence of residual motion, shake can make cumulative The optical signal arrived is incessantly from an object, so that the technical issues of image blur.
The technical solution adopted to achieve the purpose of the present invention is:
A kind of anti-shaking method applied to TDI cmos image sensor, comprising:
The single-stage optical signal that single-stage reservoir reads single-stage reservoir is stored in compensating electric capacity, while in TDI accumulator Middle progress tradition TDI accumulation;
TDI accumulator calculates single-stage optical signal difference and optical signal difference is added in cumulative capacitor, obtains optical signal Total variances, and obtain resultant signal using the optical signal total variances and export;
Wherein, n grades of TDI optical signal total variances are as follows:
Resultant signal
Wherein, YA is single-stage optical signal, i=n.
Wherein, the single-stage reservoir is arranged between TDI accumulator and multiple pixels, includes:
Compensating electric capacity module, the compensating electric capacity comprising multiple parallel arrangements, for the single-stage optical signal that CDS is read, each Compensating electric capacity connects a compensating electric capacity switch;
Condenser type trans-impedance amplifier, be located between the compensating electric capacity module and multiple pixels between, output and compensation The input of capacitance module connects, and is used for charge integration, including gain amplifier and a capacitor, a compensating switch;Compensation Work when closing the switch, by and compensating electric capacity switch be closed in the corresponding TDI stage, by integral result to compensating electric capacity, make phase The compensating electric capacity answered obtains the accumulation of charge.
Wherein, one capacitor, a compensating switch are arranged in parallel with gain amplifier respectively.
Wherein, the output of the compensating electric capacity module is believed by the light of first switch and the gain amplifier of TDI accumulator The connection of number input terminal, the signal input part of the gain amplifier of TDI accumulator and the light signal output end of pixel are opened by second Pass is connected.
Wherein, the TDI accumulator includes the accumulation capacitor of multiple parallel arrangements, samples holding capacitor, each described tired Product capacitor and an accumulation switch are connected in series, and the sampling holding capacitor passes through the increasing of sample-hold switch and TDI accumulator The signal output end of beneficial amplifier connects, multiple accumulation capacitors, accumulation switch respectively with the gain amplifier of TDI accumulator simultaneously Connection.
Compared with prior art, the beneficial effects of the present invention are:
By the method for the invention, the difference of different phase is found, and then finds the resultant signal from a kind of object, to reach To deblurring, the effect of raising image quality.
Detailed description of the invention
Fig. 1 is the imaging mode schematic diagram of traditional TDI cmos image sensor;
Fig. 2 is TDI imaging mode schematic diagram affected by jitter;
Fig. 3 is the TDI path circuit schematic diagram of one embodiment of the invention.
Specific embodiment
The present invention is described in further detail below in conjunction with the drawings and specific embodiments.It should be appreciated that described herein Specific embodiment be only used to explain the present invention, be not intended to limit the present invention.
As shown in Fig. 2, carrying out principle of specification by taking level Four TDI as an example, tri- objects of A, B and C are positionable adjacent one another, it is assumed that each The optical signal density of a object is uniform, at the same assume pixel center away from the effective photosensitive area of pixel direction along ng a path length It spends equal.Residual motion will lead to image and be displaced.The displacement of adjacent phases is r respectively1、r2And r3
YA1=a (1)
YA2=YA1+r1(-a+b) (2)
YA3=YA2+r2(-a+b) (3)
YA4=YA3+r3(-a+b) (4)
Wherein, YA1-YA4 represents the optical signal size of four-stage pixel capture, and a indicates that the optical signal of object A, b indicate The optical signal of object B.If following the cumulative mode of traditional TDI, four pixel optical signals are accumulated in together, optical signal is finally obtained Neither from object A nor object B is come from, but the mixed signal of two articles, since signal mixing leads to image blur.
It can be handled by finding the difference in two neighboring stage, wherein the difference in two neighboring stage can be from YA1 to YA4 In find, the difference of mixed signal and clear signal may be expressed as:
Δ Y=3r1(a-b)+2r2(a-b)+r3(a-b) (5)
Δ Y=3 (YA1-YA2)+2 (YA1-YA3)+YA3-YA4 (6)
A clearly resultant signal Y is obtained by Δ Y, resultant signal Y is indicated are as follows:
It can be seen that, by level Four TDI imaging sensor, resultant signal Y is obtained from above formula, while in resultant signal Y only Signal from object A.It can be obtained by a clearly resultant signal in this way, to achieve the effect that deblurring.This method can To be generalized to the clear signal for seeking n rank TDI, formula 8 are as follows:
It is illustrated in figure 3 the TDI path circuit of one embodiment of the invention, left side one is classified as n pixel, serves as n TDI Stage arranges parallel TDI circuit and two modules --- and TDI accumulator and single-stage reservoir-are integrated.Due to active using standard 4T Dot structure selects gain amplifier for basic structure, removes reset noise by correlated-double-sampling (CDS).
Wherein, gain amplifier (GA2) and compensating switch SC, capacitor CDA condenser type trans-impedance amplifier is formed, electricity is used as Lotus integral, capacitor CICFor eliminating the offset voltage of gain amplifier (GA2), compensating switch SCIt works when closure, integral knot Fruit passes to compensating electric capacity (CC1-CCn-1), compensating electric capacity switchs (SC1-SCn-1) be closed in the corresponding TDI stage, make corresponding Compensating electric capacity obtains the accumulation of charge.
In TDI accumulator, gain amplifier GA1 and capacitor (CA1-CAn) play identical effect, capacitor CIAFor disappearing Except the offset voltage of gain amplifier GA1, with capacitor (CA1-CAn) in parallel accumulation switch SAWhen closure, condenser type amplifies across resistance Device work, accumulates capacitance switch (SA1-SAn) be closed in the corresponding TDI stage, so that stored charge is stored in corresponding capacitor (CA1- CAn) the inside, final integral result is in sample-hold switch SSHSampling holding capacitor C is passed to when closureSH
TDI accumulator, the accumulation for conventional TDI accumulation and neighbouring stage signal difference.Single-stage reservoir reads defeated from CDS Single-stage optical signal out, (CC1-CCn-1) it is compensating electric capacity, different capacitances generate the coefficient of formula (8), while storing light Signal.Store the calculating that charge is used as subsequent optical signal difference.
The specific works of circuit shown in Fig. 3 are divided into two steps:
Firstly, two switch SMClosure, CDS read single-stage optical signal, single-stage optical signal are stored in compensating electric capacity.Together When in TDI accumulator carry out tradition TDI accumulation (CIAFor input capacitance, the accumulation capacitance of respective stage is as feedback capacity). By n-th order segment signal YAnIt is stored in CAnIn, the (n-1)th stage is by signal YAn-1It is stored in CAn-1In, the 1st stage is by signal YA1Storage There are CA1In, then add up together.So n grades of TDI tradition accumulation results are as follows:
Second step, two switch SMShutdown, TDI accumulator calculate optical signal difference and are added to corresponding cumulative electricity In appearance (for the compensating electric capacity of adjacent phases as input, the accumulation capacitor of respective stage is as feedback).
N-th order section, with being stored in CCn-1Charge PAn-1It subtracts and is stored in CAnSignal PAn, PAn-1-PAnIt is stored in CAn In, the (n-1)th stage, with being stored in CCn-2Charge PAn-2It subtracts and is stored in CAn-1In charge, due to the capacitor of compensating electric capacity Value difference causes the coefficient in formula (8) different, so being stored in CAn-1In charge difference be 2 (PAn-2-PAn-1)。
2nd stage, with being stored in CC1In charge PA1It subtracts and is stored in CA2In charge PA2, by charge differences (n-1) (PA1-PA2) it is stored in CA2In, the 1st stage calculated without charge differences, the charge differences of n rank was accumulated in together, then n grades TDI optical signal total variances are as follows:
By above-mentioned two step, available final resultant signal
As can be seen that influence of the residual motion to imaging effect can be effectively removed, through the invention so as to obtain one The optical signal of a relative ideal, to greatly improve image quality.
The above is only a preferred embodiment of the present invention, it is noted that for the common skill of the art For art personnel, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications Also it should be regarded as protection scope of the present invention.

Claims (5)

1. a kind of anti-shaking method applied to TDI cmos image sensor, which is characterized in that comprising steps of
Single-stage reservoir read single-stage reservoir single-stage optical signal be stored in compensating electric capacity, while in TDI accumulator into Row tradition TDI accumulation;
TDI accumulator calculates single-stage optical signal difference and optical signal difference is added in cumulative capacitor, and it is always poor to obtain optical signal It is different, and obtain resultant signal using the optical signal total variances and export;
Wherein, n grades of TDI optical signal total variances are as follows:
Resultant signal
Wherein, YA is single-stage optical signal, i=n.
2. being applied to the anti-shaking method of TDI cmos image sensor as described in claim 1, which is characterized in that the single-stage Reservoir is arranged between TDI accumulator and multiple pixels, includes:
Compensating electric capacity module, the compensating electric capacity comprising multiple parallel arrangements, for the single-stage optical signal that CDS is read, each compensation One compensating electric capacity switch of capacitance connection;
Condenser type trans-impedance amplifier, be located between the compensating electric capacity module and multiple pixels between, output and compensating electric capacity The input of module connects, and is used for charge integration, including gain amplifier and a capacitor, a compensating switch;Compensating switch Work when closure, by and compensating electric capacity switch be closed in the corresponding TDI stage, by integral result to compensating electric capacity, make accordingly Compensating electric capacity obtains the accumulation of charge.
3. being applied to the anti-shaking method of TDI cmos image sensor as claimed in claim 2, which is characterized in that one Capacitor, a compensating switch are arranged in parallel with gain amplifier respectively.
4. being applied to the anti-shaking method of TDI cmos image sensor as described in claim 1, which is characterized in that the compensation The output of capacitance module is connect by first switch with the optical signal input of the gain amplifier of TDI accumulator, TDI accumulator The signal input part of gain amplifier be connected with the light signal output end of pixel by second switch.
5. being applied to the anti-shaking method of TDI cmos image sensor as claimed in claim 4, which is characterized in that the TDI Accumulator includes the accumulation capacitor of multiple parallel arrangements, samples holding capacitor, and each accumulation capacitor and an accumulation switch It is connected in series, the signal output end that the sampling holding capacitor passes through sample-hold switch and the gain amplifier of TDI accumulator Connection, multiple accumulation capacitors, accumulation switch are in parallel with the gain amplifier of TDI accumulator respectively.
CN201910454957.6A 2019-05-29 2019-05-29 A kind of anti-shaking method applied to TDI cmos image sensor Pending CN110233964A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910454957.6A CN110233964A (en) 2019-05-29 2019-05-29 A kind of anti-shaking method applied to TDI cmos image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910454957.6A CN110233964A (en) 2019-05-29 2019-05-29 A kind of anti-shaking method applied to TDI cmos image sensor

Publications (1)

Publication Number Publication Date
CN110233964A true CN110233964A (en) 2019-09-13

Family

ID=67858744

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910454957.6A Pending CN110233964A (en) 2019-05-29 2019-05-29 A kind of anti-shaking method applied to TDI cmos image sensor

Country Status (1)

Country Link
CN (1) CN110233964A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113422916A (en) * 2021-06-08 2021-09-21 天津大学 Digital accumulator for eliminating jitter and jitter eliminating method

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6906749B1 (en) * 1998-09-16 2005-06-14 Dalsa, Inc. CMOS TDI image sensor
CN101123684A (en) * 2006-02-01 2008-02-13 索尼株式会社 Taken-image signal-distortion compensation method, taken-image signal-distortion compensation apparatus, image taking method and image-taking apparatus
CN102629996A (en) * 2012-03-29 2012-08-08 天津大学 Color time delay integration CMOS image sensor
CN103248838A (en) * 2013-05-17 2013-08-14 中国科学院长春光学精密机械与物理研究所 CMOS camera image bias adjusting method based on digital field TDI (time delayed and integration) algorithm
CN103986888A (en) * 2014-05-20 2014-08-13 天津大学 TDI-type CMOS image sensor accumulation circuit for reinforcing single event effect
CN104219469A (en) * 2014-09-22 2014-12-17 天津大学 Device and method for improving accumulating effect of image sensor simulation domain accumulator
CN204272277U (en) * 2014-12-21 2015-04-15 天津大学 Be applied to the simulation accumulator of TDI type cmos image sensor
CN104904194A (en) * 2012-12-10 2015-09-09 科磊股份有限公司 Method and apparatus for high speed acquisition of moving images using pulsed illumination
EP2839505A4 (en) * 2012-04-15 2015-11-25 Kla Tencor Corp Apparatus and method for synchronizing sample stage motion with a time delay integration charge-couple device in a semiconductor inspection tool
CN107105177A (en) * 2017-04-26 2017-08-29 天津大学 Single-photon avalanche photodiode time delay integration cmos image sensor
CN107277384A (en) * 2017-05-19 2017-10-20 中国科学院长春光学精密机械与物理研究所 High-resolution video satellite imaging equipment
CN107292839A (en) * 2017-06-07 2017-10-24 浙江大学 A kind of TDI flutter image recovery methods adjusted based on image block adaptive

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6906749B1 (en) * 1998-09-16 2005-06-14 Dalsa, Inc. CMOS TDI image sensor
CN101123684A (en) * 2006-02-01 2008-02-13 索尼株式会社 Taken-image signal-distortion compensation method, taken-image signal-distortion compensation apparatus, image taking method and image-taking apparatus
CN102629996A (en) * 2012-03-29 2012-08-08 天津大学 Color time delay integration CMOS image sensor
EP2839505A4 (en) * 2012-04-15 2015-11-25 Kla Tencor Corp Apparatus and method for synchronizing sample stage motion with a time delay integration charge-couple device in a semiconductor inspection tool
CN104904194A (en) * 2012-12-10 2015-09-09 科磊股份有限公司 Method and apparatus for high speed acquisition of moving images using pulsed illumination
CN103248838A (en) * 2013-05-17 2013-08-14 中国科学院长春光学精密机械与物理研究所 CMOS camera image bias adjusting method based on digital field TDI (time delayed and integration) algorithm
CN103986888A (en) * 2014-05-20 2014-08-13 天津大学 TDI-type CMOS image sensor accumulation circuit for reinforcing single event effect
CN104219469A (en) * 2014-09-22 2014-12-17 天津大学 Device and method for improving accumulating effect of image sensor simulation domain accumulator
CN204272277U (en) * 2014-12-21 2015-04-15 天津大学 Be applied to the simulation accumulator of TDI type cmos image sensor
CN107105177A (en) * 2017-04-26 2017-08-29 天津大学 Single-photon avalanche photodiode time delay integration cmos image sensor
CN107277384A (en) * 2017-05-19 2017-10-20 中国科学院长春光学精密机械与物理研究所 High-resolution video satellite imaging equipment
CN107292839A (en) * 2017-06-07 2017-10-24 浙江大学 A kind of TDI flutter image recovery methods adjusted based on image block adaptive

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
GÉRALD LEPAGE等: "《Time-Delay-Integration Architectures in CMOS Image Sensors》", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113422916A (en) * 2021-06-08 2021-09-21 天津大学 Digital accumulator for eliminating jitter and jitter eliminating method

Similar Documents

Publication Publication Date Title
KR102547435B1 (en) Imaging element, imaging method and electronic apparatus
CN103329513B (en) Solid camera head and its driving method
CN105763819B (en) Imaging sensor and picture pick-up device
CN106060435B (en) Ramp generator for low noise image sensor
US8134623B2 (en) Analog-to-digital conversion in image sensors using a differential comparison
CN107592476B (en) Image device
US8411184B2 (en) Column output circuits for image sensors
US20090009645A1 (en) Image Sensor, Method for Operating an Image Sensor, and Computer Program
JP6100074B2 (en) Photoelectric conversion device and imaging system
EP1326428A2 (en) Image pickup apparatus
US9838621B2 (en) Method and system for implementing H-banding cancellation in an image sensor
JP2011182065A (en) Solid-state image capturing device, drive method therefor, and camera
CN104349087A (en) Image sensor, control method, and electronic apparatus
CN106060434A (en) Image sensor power supply rejection ratio noise reduction through ramp generator
CN110231693A (en) Imaging sensor
JP2015035637A (en) Solid state image pickup device and camera
WO2019026632A1 (en) Solid-state image capture element and image capture device
CN110233964A (en) A kind of anti-shaking method applied to TDI cmos image sensor
JP2010206653A (en) Imaging apparatus, and imaging element and driving method thereof
CN105222900B (en) Infrared focal plane array reading circuit
US10652486B2 (en) Image sensor with electron and hole collection electrodes
JP2022505571A (en) Ultra high dynamic range CMOS sensor
US20210185253A1 (en) Image sensor, image capturing device and capacitance device
Hang Time-Delay-Integration CMOS Image Sensor Design For Space Applications
US11810342B2 (en) High resolution fast framing infrared detection system

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20210702

AD01 Patent right deemed abandoned