CN102629996A - Color time delay integration CMOS image sensor - Google Patents
Color time delay integration CMOS image sensor Download PDFInfo
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- CN102629996A CN102629996A CN2012100880553A CN201210088055A CN102629996A CN 102629996 A CN102629996 A CN 102629996A CN 2012100880553 A CN2012100880553 A CN 2012100880553A CN 201210088055 A CN201210088055 A CN 201210088055A CN 102629996 A CN102629996 A CN 102629996A
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Abstract
The invention relates to the field of design of an analog-digital mixed integrated circuit. For improving the shooting quality and simplifying the structure, the invention adopts the technical scheme that a color time delay integration CMOS (Complementary Metal-Oxide-Semiconductor Transistor) image sensor has the following structure that a, lenses with three colors of red, green and blue are arranged on a CMOS active pixel array and hypothetically, N rows of pixels are provided; and b, in one row in the pixel array, pixel gray values obtained by exposure are sequentially stored in corresponding storages. The integration progression of TDI (Time Delay Integration) is controlled and components of the same colors are taken out of the storages and are fed into corresponding accumulators to be accumulated, i.e. red signals stored in all the R_mem storages are read and accumulated to obtain a red signal Sigma B; and in the same way, green and blue signals are read according to the mode and finally, an accumulated green signal Sigma G and an accumulated blue signal Sigma B are output. The color time delay integration CMOS image sensor is mainly applied to design and manufacturing of the CMOS image sensor.
Description
Technical field
The present invention relates to integrated circuit fields, relate in particular to a kind of time delays integration (Time Delay Integration, TDI) type cmos image sensor of colour.
Background technology
Time delay integration is that a kind of linear array push is swept mode, and object utilizes its multistage photosensitive unit that the method for same target multiexposure, multiple exposure is obtained enough photoelectric sensitivity and signal to noise ratio with respect to detector motion.Through changing the time for exposure that TDI progression has changed visible light, multiexposure, multiple exposure can reduce the inhomogeneous and still image The noise of response between pixel.Therefore, the TDI technology is widely used in fields such as space flight, aviations.
Fig. 1 is 4 grades of TDI mode of operations, 1 expression single column of pixels among Fig. 1, and Pixel1 is the pixel of first row, Pixel2 is the pixel of second row.2 expression objects are by the gray value after making public among Fig. 1, and in the t moment, object 1 is by the Pixel1 exposure, and gray value is P_1 (t); In the t+1 moment, object 1 is by the Pixel2 exposure, and gray value is P_1 (t+1), and object 2 is by the Pixel1 exposure, and gray value is P_2 (t+1); By that analogy.Then object 1 final gray value be each constantly with value P_1=(P_1 (t)+P_1 (t+1)+P_1 (t+2)+P_1 (t+3))
Need be on pel array when common coloured image is taken by odd-numbered line alternately place red (red, R), green (green, G); Even number line is alternately placed green (green; G), blue (blue, arrangement mode B) (Bayer form) covers lens, and is as shown in Figure 2; After obtaining corresponding color component, obtain complete image information through color interpolation.And present existing colored TDI technology is for doing R, G, B three layer charge coupled mode (CCD) pel arrays respectively.
Summary of the invention
The present invention is intended to solve the deficiency that overcomes prior art, and a kind of cmos image sensor of color image shot is provided, and can improve shooting quality, and simplified structure.For achieving the above object, the technical scheme that the present invention takes is, colored time delays integral form cmos image sensor, and structure is following:
A) on the CMOS active pixel array, lay the lens of three kinds of colors of red, green, blue; Suppose a total capable pixel of N, N is 3 multiple, N=3 * n; I is 1 to n integer; The capable placement of the 3rd * i+1 Red lightscreening plate, the capable placement of the 3rd * n+2 green color filter, the capable placement of the 3rd * n+3 blue color filter so, the one-level integration among wherein per three behavior TDI, total n level integration;
B) one in pel array row, the grey scale pixel value that exposure is obtained are stored in separately in the corresponding memory successively, that is: red component deposits the R_mem memory in, and green component deposits the G_mem memory in, and blue component deposits the B_mem memory in;
The integration progression of control TDI also takes out the component of same color from memory, send in the corresponding accumulator and add up, and the danger signal that is about to store in all R_mem memories is read and added up, and obtains ∑ R; In like manner green and blue signal are also read in this manner green ∑ G and blue signal ∑ B after final output adds up.
Pixel array sized is 1024 row, 96 row, can realize that progression is that 4,16,32 grades of integrations are adjustable; Pel array adopts memory array to preserve accumulation result outward, the RGB mode image of output R, G, each 10bit of B component.
Technical characterstic of the present invention and effect:
Employing TDI technology is carried out multiexposure, multiple exposure to same object and is averaged, and has reduced picture noise, and the RGB component that directly obtains each pixel through adding up need not color interpolation, simplifies the structure.
Description of drawings
Fig. 1 TDI operation principle.
Fig. 2 Bayer lens.
Fig. 3 covers the pel array of colored anti-dazzling screen.
The TDI process of Fig. 4 single column of pixels.
Embodiment
The present invention realizes through following structure:
C) on the CMOS active pixel array, lay the lens of three kinds of colors of red, green, blue, suppose a total capable pixel of N, N is 3 multiple.Make N=3 * n, i is 1 to n integer, and the capable placement of the 3rd * i+1 Red lightscreening plate, the capable placement of the 3rd * n+2 green color filter, the capable placement of the 3rd * n+3 blue color filter are as shown in Figure 3 so, the one-level among wherein per three behavior TDI, total n level.
D) for row wherein, the grey scale pixel value that exposure is obtained is stored in separately in the corresponding memory, shown among Fig. 41 successively.In order to distinguish, among the called after R_mem, the name memory that green component deposits in is G_mem in the memory that red component deposits in, and the name memory that blue component deposits in is B_mem.
E) it is 4,16,32 grades through gating 12,48 or the corresponding TDI integration progression of 96 row pel array controls; And the component of same color taken out from memory; Send in the corresponding accumulator and add up, the danger signal that is about to store in all R_mem memories is read and is added up, and obtains ∑ R; In like manner green and blue signal are also read in this manner, green ∑ G and blue signal ∑ B after final output adds up are shown among Fig. 42.
Pixel array sized be 1024 row, 96 the row, can realize integration progression be 4,16,32 grades adjustable.Pel array adopts memory array to preserve accumulation result outward, the RGB mode image of output R, G, each 10bit of B component.
Claims (2)
1. the time delays integral form cmos image sensor of a colour is characterized in that,
A) on the CMOS active pixel array, lay the lens of three kinds of colors of red, green, blue; Suppose a total capable pixel of N, N is 3 multiple, N=3 * n; I is 1 to n integer; The capable placement of the 3rd * i+1 Red lightscreening plate, the capable placement of the 3rd * n+2 green color filter, the capable placement of the 3rd * n+3 blue color filter so, the one-level integration among wherein per three behavior TDI, total n level integration;
B) one in pel array row, the grey scale pixel value that exposure is obtained are stored in separately in the corresponding memory successively, that is: red component deposits the R_mem memory in, and green component deposits the G_mem memory in, and blue component deposits the B_mem memory in;
The integration progression of control TDI also takes out the component of same color from memory, send in the corresponding accumulator and add up, and the danger signal that is about to store in all R_mem memories is read and added up, and obtains ∑ R; In like manner green and blue signal are also read in this manner green ∑ G and blue signal ∑ B after final output adds up.
2. the time delays integral form cmos image sensor of colour as claimed in claim 1 is characterized in that, pixel array sized is 1024 row, 96 row, can realize that progression is that 4,16,32 grades of integrations are adjustable; Pel array adopts memory array to preserve accumulation result outward, the RGB mode image of output R, G, each 10bit of B component.
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103546729A (en) * | 2013-10-24 | 2014-01-29 | 天津大学 | Gray-color dual-mode TDI-CMOS image sensor and control method |
CN105049755A (en) * | 2014-04-28 | 2015-11-11 | 三星电子株式会社 | Image sensor including pixel having photoelectric conversion elements and image processing device having the image sensor |
CN108604593A (en) * | 2016-01-22 | 2018-09-28 | 特利丹E2V半导体简化股份公司 | Polyteny imaging sensor with time of integration adjustment charge transmission |
CN110233964A (en) * | 2019-05-29 | 2019-09-13 | 天津大学 | A kind of anti-shaking method applied to TDI cmos image sensor |
CN110650299A (en) * | 2019-09-09 | 2020-01-03 | 北京空间机电研究所 | Charge domain and digital domain mixed bidirectional TDI accumulation system and method |
CN113824935A (en) * | 2021-09-23 | 2021-12-21 | 合肥埃科光电科技有限公司 | Time delay integration method, device and equipment of pseudo color line scanning camera |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103546729A (en) * | 2013-10-24 | 2014-01-29 | 天津大学 | Gray-color dual-mode TDI-CMOS image sensor and control method |
CN103546729B (en) * | 2013-10-24 | 2015-04-15 | 天津大学 | Gray-color dual-mode TDI-CMOS image sensor and control method |
CN105049755A (en) * | 2014-04-28 | 2015-11-11 | 三星电子株式会社 | Image sensor including pixel having photoelectric conversion elements and image processing device having the image sensor |
CN105049755B (en) * | 2014-04-28 | 2019-05-31 | 三星电子株式会社 | Imaging sensor and image processing apparatus with the imaging sensor |
CN108604593A (en) * | 2016-01-22 | 2018-09-28 | 特利丹E2V半导体简化股份公司 | Polyteny imaging sensor with time of integration adjustment charge transmission |
CN110233964A (en) * | 2019-05-29 | 2019-09-13 | 天津大学 | A kind of anti-shaking method applied to TDI cmos image sensor |
CN110650299A (en) * | 2019-09-09 | 2020-01-03 | 北京空间机电研究所 | Charge domain and digital domain mixed bidirectional TDI accumulation system and method |
CN113824935A (en) * | 2021-09-23 | 2021-12-21 | 合肥埃科光电科技有限公司 | Time delay integration method, device and equipment of pseudo color line scanning camera |
CN113824935B (en) * | 2021-09-23 | 2024-04-09 | 合肥埃科光电科技股份有限公司 | Time delay integration method, device and equipment for pseudo-color line scanning camera |
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