CN110212055A - 薄膜太阳能电池除氧工艺 - Google Patents
薄膜太阳能电池除氧工艺 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 83
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 71
- 239000003513 alkali Substances 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 30
- 239000001301 oxygen Substances 0.000 claims abstract description 29
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229940123973 Oxygen scavenger Drugs 0.000 claims abstract description 16
- 239000000243 solution Substances 0.000 claims description 38
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 20
- 239000000908 ammonium hydroxide Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
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- 239000012670 alkaline solution Substances 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 7
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- 239000002253 acid Substances 0.000 claims description 6
- 238000006392 deoxygenation reaction Methods 0.000 claims description 6
- 150000003839 salts Chemical class 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
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- 235000019252 potassium sulphite Nutrition 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
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- 238000001514 detection method Methods 0.000 description 6
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- SBDRCSRPQSGROW-UHFFFAOYSA-N O=[Zn]=S Chemical compound O=[Zn]=S SBDRCSRPQSGROW-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
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- GQCYCMFGFVGYJT-UHFFFAOYSA-N [AlH3].[S] Chemical compound [AlH3].[S] GQCYCMFGFVGYJT-UHFFFAOYSA-N 0.000 description 1
- MOAPOQQDYQRCET-UHFFFAOYSA-N [Cu].[In].[Se]=S Chemical compound [Cu].[In].[Se]=S MOAPOQQDYQRCET-UHFFFAOYSA-N 0.000 description 1
- QHGMZMAAOFEUTL-UHFFFAOYSA-N [O].[OH-].[NH4+] Chemical compound [O].[OH-].[NH4+] QHGMZMAAOFEUTL-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 229910052792 caesium Inorganic materials 0.000 description 1
- 229910000025 caesium bicarbonate Inorganic materials 0.000 description 1
- HUCVOHYBFXVBRW-UHFFFAOYSA-M caesium hydroxide Inorganic materials [OH-].[Cs+] HUCVOHYBFXVBRW-UHFFFAOYSA-M 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910000032 lithium hydrogen carbonate Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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Abstract
本发明公开了一种薄膜太阳能电池除氧工艺，其中，薄膜太阳能电池包括依次层叠设置的衬底、光吸收层、碱金属层和缓冲层，碱金属层包括碱金属含氧盐。该薄膜太阳能电池除氧工艺应用于对碱金属含氧盐中氧的去除，其包括：将未形成缓冲层之前且已形成有碱金属层的衬底置于除氧剂中浸泡，去除碱金属含氧盐中的氧；其中，除氧剂包括可溶性碱性溶液。本发明通过可溶性碱性溶液与碱金属层中的碱金属含氧盐进行反应，从而去除芯片碱金属层的碱金属含氧盐中的氧，大大降低了碱金属含氧盐对光伏电池组件功率的影响。
Description
技术领域
本发明涉及薄膜太阳能电池除氧工艺技术领域，尤其涉及一种应用于 CIGS薄膜太阳能电池生产中化学水浴沉积前的除氧工艺。
背景技术
铜铟镓硒(简称CIGS)薄膜太阳能电池是新一代具有发展前景的太阳能电池。它具有转换效率高、成本低、寿命长、弱光性能好、抗辐射能力强等优点。自20世纪90年代以来，CIGS薄膜太阳能电池一直是实验室转换效率最高的薄膜太阳能电池。2016年德国ZSW在实验室中将CIGS薄膜太阳能电池的转换效率提升至22.6％。由于CIGS薄膜太阳能电池的转换效率与晶硅电池的转换效率较为接近，因此，CIGS薄膜太阳能电池具有较大的发展前景。
目前，CIGS薄膜太阳能电池芯片的生产工艺流程如下：制备CIGS膜层→化学水浴沉积(CBD)方法制备缓冲层膜层→P2刻划→制备透明导电氧化物(TCO)膜层。在实际生产中，芯片从CIGS镀膜工段传输至CBD镀膜工段间，该过程中CIGS膜层可能因露置于空气中而在表面形成氧化层，氧化层中的碱金属碳酸氢盐等碱金属含氧盐，会对光老练后的组件功率产生影响。
发明内容
为了解决上述技术问题，本发明提供了一种薄膜太阳能电池除氧工艺，能够有效去除芯片在CIGS镀膜工段至CBD镀膜工段间因露置于空气而在 CIGS膜层表面形成的氧化层，大大降低氧化层对光伏电池组件功率的影响。
本发明提供了一种薄膜太阳能电池除氧工艺，所述薄膜太阳能电池包括依次层叠设置的衬底、光吸收层、碱金属层和缓冲层，所述碱金属层包括碱金属含氧盐，所述薄膜太阳能电池除氧工艺应用于对所述碱金属含氧盐中氧的去除，所述薄膜太阳能电池除氧工艺包括：将未形成所述缓冲层之前且已形成有所述碱金属层的衬底置于除氧剂中浸泡，去除所述碱金属含氧盐中的氧；其中，所述除氧剂包括可溶性碱性溶液。
在CIGS薄膜太阳能电池的实际生产中，为了控制CIGS膜层表面形貌优化，提高电池转换效率和功率，在CIGS膜层表面沉积较薄的碱金属层，例如 KF膜层等。依次沉积有CIGS膜层和碱金属层的芯片从CIGS镀膜工段传输至CBD镀膜工段间，可能因碱金属层露置于空气中与空气中的水及二氧化碳反应而形成氧化层，氧化层中的碱金属碳酸氢盐等碱金属含氧盐，例如KHCO3等，会对光老练后的组件功率产生影响。
基于上述，本发明将未形成缓冲层前且已依次沉积有光吸收层(例如， CIGS膜层)和碱金属层(电池芯片的碱金属层物质如KF因在空气中被氧化，生成含有如碱金属碳酸氢盐KHCO3等的碱金属含氧盐)的衬底置于包括可溶性碱性溶液的除氧剂中浸泡，通过可溶性碱性溶液与碱金属层中的碱金属含氧盐进行反应，从而去除芯片碱金属层的碱金属含氧盐中的氧，大大降低了碱金属含氧盐对光伏电池组件功率的影响。
此外，通过在CIGS镀膜工段传输至CBD镀膜工段间增加本发明的除氧工艺，能够延长CIGS镀膜工段传输至CBD镀膜工段的有效等待时间(除氧工艺前的时间)，增加缓存芯片数目，可使CBD工序前的各工序生产更加灵活且可控，很大程度上降低了CIGS镀膜设备宕机导致整线生产停机的风险。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书中所特别指出的结构来实现和获得。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
一般地，现有薄膜太阳能电池包括依次层叠设置的衬底、背电极层、光吸收层、缓冲层和窗口层。具有高转换效率的CIGS薄膜太阳能电池除了具有上述结构外，还至少包括碱金属层(例如KF膜层)，碱金属层沉积在光吸收层CIGS膜层与缓冲层(例如硫化镉)之间，以控制CIGS膜层表面形貌优化，提高电池转换效率和功率。
在CIGS薄膜太阳能电池的实际生产中，依次沉积有CIGS膜层和碱金属层的芯片从CIGS镀膜工段传输至CBD镀膜(缓冲层，例如硫化镉)工段间，可能因碱金属层露置于空气中与空气中的水及二氧化碳反应而形成氧化层，氧化层中的碱金属碳酸氢盐等碱金属含氧盐，例如KHCO3等，会对光老练后的组件功率产生影响。
基于上述，本发明提供一种薄膜太阳能电池除氧工艺，能够有效去除芯片在CIGS镀膜工段至CBD镀膜工段间因露置于空气而在CIGS膜层表面形成的氧化层，大大降低氧化层对光伏电池组件功率的影响。
本发明提供的一种薄膜太阳能电池除氧工艺应用于上述结构的薄膜太阳能电池生产中，对碱金属层的碱金属含氧盐中氧进行去除。薄膜太阳能电池除氧工艺包括：将未形成缓冲层之前且已形成有碱金属层的衬底置于除氧剂中浸泡，去除碱金属含氧盐中的氧。
上述的衬底可选择玻璃衬底或柔性衬底。
上述的背电极层的材质选自钼、钛、铬中的一种或几种。
上述的缓冲层可选择采用CBD方法制备的硫化镉层，也可选择采用CBD 方法制备的无隔缓冲层，还可选择其他N型材料。其中，无隔缓冲层可选择采用CBD方法制备的三元锌镁氧化合物(ZMO)、氧硫锌(Zn(O,S))、掺硼氧化锌(ZnO∶B，简写为BZO)中的一种或多种。
上述的窗口层包括本征氧化锌(i～ZnO)薄膜和掺铝氧化锌(AZO)薄膜。其中，i～ZnO薄膜沉积在缓冲层表面，AZO薄膜沉积在i～ZnO薄膜表面。
上述的光吸收层可选择铜铟镓硒膜层、铜铟镓硒硫膜层、铜铟镓硫膜层、铜铟镓铝硒膜层、铜铟镓铝硒硫膜层、铜铟镓铝硫膜层、铜铟硒膜层、铜铟硒硫膜层、铜铟硫膜层中的一种或多种。
上述的碱金属层是碱金属阳离子(Li、K、Rb、Cs中的一种或多种阳离子)和阴离子(例如，F离子)形成的碱金属化合物沉积膜层。碱金属层可以是单一碱金属阳离子与单一阴离子共同沉积的膜层，也可以是多种碱金属阳离子与单一或多种阴离子共同沉积的单层或多层膜层，还可以是单一碱金属阳离子与多种阴离子共同沉积的单层或多层膜层，例如，LiF膜层、和/或KF 膜层、和/或RbF膜层、和/或CsF膜层。碱金属层中因在空气中被氧化而形成碱金属含氧盐，尤其包括上述碱金属的碱金属碳酸氢盐，例如，相匹配的 KHCO3、和/或LiHCO3、和/或RbHCO3、和/或CsHCO3。
上述的除氧剂包括可溶性碱性溶液。在这里，可溶性碱性溶液既可以是可溶的弱碱或强碱液，也可以是呈碱性且可溶的强碱弱酸盐溶液。当可溶性碱性溶液选择弱碱或强碱液时，可溶性碱性溶液与碱金属碳酸氢盐发生反应，反应原理方程式为：OH-+HCO3-→CO3 2-+H2O，从而去除碱金属含氧盐中的氧，大大降低了碱金属含氧盐对光伏电池组件功率的影响。当可溶性碱性溶液选择强碱弱酸盐溶液时，强碱弱酸盐水解后释放OH-离子，OH-离子再与碱金属碳酸氢盐发生反应，反应方程式如前所述，在此省略，同样也能有效去除碱金属含氧盐中的氧，大大降低碱金属含氧盐对光伏电池组件功率的影响。
此外，通过在CIGS镀膜工段传输至CBD镀膜工段间增加本发明的除氧工艺，能够延长CIGS镀膜工段传输至CBD镀膜工段的有效等待时间(除氧工艺前的时间)，增加缓存芯片数目，可使CBD工序前的各工序生产更加灵活且可控，很大程度上降低了CIGS镀膜设备宕机导致整线生产停机的风险。
在一些实施方式中，上述的可溶性碱性溶液选自以下溶液中的一种或多种：弱碱溶液、除Na之外的碱溶液、除Na之外的强碱弱酸盐溶液。除Na 之外的碱溶液为氢氧化钾溶液、氢氧化铷溶液、氢氧化铯溶液中的任一种。除Na之外的强碱弱酸盐溶液为亚硫酸钾溶液、醋酸钾溶液中的任一种。进一步地，可溶性碱性溶液选自氨水、氢氧化钾溶液、亚硫酸钾溶液中的一种或多种。
在CIGS薄膜太阳能电池的实际生产中，竖直或水平放置的芯片(该芯片为依次沉积有背电极层、吸收层和包括上述碱金属碳酸氢盐的碱金属层的衬底)经自动线传输至CBD镀膜工段前，可通过机械手抓取芯片在封闭的除氧装置中的上述可溶性碱性溶液内浸泡一定时间。
在进行浸泡前，可溶性碱性溶液可以保持在常温温度，例如约18℃；也可以加热可溶性碱性溶液，使可溶性碱性溶液升温至大于18℃小于90℃温度范围内的任一温度值，例如，20℃、25℃、35℃、45℃、55℃、65℃、70℃、 75℃、85℃、89℃。可溶性碱性溶液的温度越高，除氧工艺越高效，除氧效果越彻底。
无论选择哪种可溶性碱性溶液，可溶性碱性溶液的浓度需小于等于采用 CBD方法形成缓冲层的碱性溶液浓度，能够避免除氧工艺采用高浓度的可溶性碱性溶液对后段缓冲层的沉积产生影响，进而避免影响电池转化效率和功率。浸泡时长由可溶性碱性溶液种类及浓度决定，可溶性碱性溶液的浓度越高浸泡时长越短。整个除氧工艺的浸泡时长控制在1min～20min范围内的任一时间值或时间段值，例如，2min、2min～3min、3min、5min、2～5min、3min～4min、 5min～7min、8min、10min、3min～10min、10min～15min、12min、15min、5min～16min、10min～18min等。
在一些实施方式中，由于通过CBD方法沉积缓冲层一般采用碱性溶液氨水来进行反应镀膜，因此，为了方便生产，减少生产工序，可溶性碱性溶液优选为氨水，氨水的浓度与沉积缓冲层所用氨水的浓度相同，氨水的质量分数控制在6％～25％，氨水的温度控制在20℃～75℃，浸泡时长控制在 1min～10min。将除氧工艺前的芯片与通过此条件下的氨水浸泡除氧后的芯片进行辉光放电发射光谱法(GDOES)检测，经分析CIGS膜层后各元素(包括碱金属元素、氧元素、碳元素、碱金属层的阴离子元素等)含量，去除氧化层的目标值为67％～93％，氧元素含量明显下降，则表明除氧层中的碱金属含氧盐被消耗，不影响电池功率，可进入后续生产。
在一些实施方式中，氨水的质量分数控制在9.5％～19％，氨水的温度控制在20℃～35℃，浸泡时长控制在1min～8min。将除氧工艺前的芯片与通过此条件下的氨水浸泡除氧后的芯片进行辉光放电发射光谱法(GDOES)检测，经分析CIGS膜层后各元素(包括碱金属元素、氧元素、碳元素、碱金属层的阴离子元素等)含量，去除氧化层的目标值为72％～85％。
在一实施例中，氨水的质量分数控制在19％，氨水的温度控制在30℃，浸泡时长控制在3min，将除氧工艺前的芯片与通过该此条件下的氨水浸泡除氧后的芯片进行辉光放电发射光谱法(GDOES)检测，经分析CIGS层后各元素(包括碱金属元素、氧元素、碳元素、碱金属层的阴离子元素等)含量，去除氧化层的目标值为85％。
在一些实施方式中，可溶性碱性溶液选择氢氧化钾溶液，氢氧化钾溶液需要选择浓度小于1mol/L的低浓度稀溶液，例如0.1mol/L、0.2mol/L、0.3mol/L、 0.35mol/L、0.5mol/L、0.70mol/L、0.85mol/L、0.96mol/L等，且氢氧化钾溶液最好为饱和稀溶液。氢氧化钾溶液的浓度控制在0.12mol/L～0.90mol/L，温度控制在18℃～45℃，浸泡时长控制在1min～18min。将除氧工艺前的芯片与通过此条件下的氢氧化钾溶液浸泡除氧后的芯片进行辉光放电发射光谱法 (GDOES)检测，经分析CIGS膜层后各元素(包括碱金属元素、氧元素、碳元素、碱金属层的阴离子元素等)含量，去除氧化层的目标值为79％～95％，氧元素含量明显下降，则表明除氧层中的碱金属含氧盐被消耗，不影响电池功率，可进入后续生产。
在一些实施方式中，氢氧化钾溶液的浓度控制在0.40mol/L～0.80mol/L，温度控制在25℃～40℃，浸泡时长控制在1min～10min。将除氧工艺前的芯片与通过此条件下的氢氧化钾溶液浸泡除氧后的芯片进行辉光放电发射光谱法 (GDOES)检测，经分析CIGS膜层后各元素(包括碱金属元素、氧元素、碳元素、碱金属层的阴离子元素等)含量，去除氧化层的目标值为81％～92％。
在一实施例中，氢氧化钾溶液的浓度控制在0.58mol/L，温度控制在27℃，浸泡时长控制在2min，将除氧工艺前的芯片与通过该此条件下的氢氧化钾溶液浸泡除氧后的芯片进行辉光放电发射光谱法(GDOES)检测，经分析CIGS 层后各元素(包括碱金属元素、氧元素、碳元素、碱金属层的阴离子元素等) 含量，去除氧化层的目标值为92％。
由于采用CBD方法形成缓冲层采用的是氨水，除氧剂选择氨水除去碱金属含氧盐中氧的除氧工艺，并没有引入杂质离子，因此，不需要一定增加对浸泡后的芯片进行洗涤的工序，取出浸泡过后的芯片传输至自动线，无需风干，进入CBD镀膜工段，继续正常生产。
由于除选择氨水之外的除氧剂除去碱金属含氧盐中氧的除氧工艺，引入了杂质离子，因此，需要增加对浸泡后的芯片进行洗涤的工序，以除去衬底表面残余除氧剂，有效避免除氧工艺因引入杂质离子对后段缓冲层的沉积产生影响，进而避免影响电池转化效率和功率。
洗涤可以采用喷淋式洗涤方式，所采用的洗涤液选择采用CBD方法沉积缓冲层的碱性溶液，例如氨水，以匹配上后段的缓冲层CBD沉积工艺，减少对电池转化效率和功率的影响。
虽然本发明所揭露的实施方式如上，但所述的内容仅为便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属领域内的技术人员，在不脱离本发明所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。
Claims (10)
1.一种薄膜太阳能电池除氧工艺，所述薄膜太阳能电池包括依次层叠设置的衬底、光吸收层、碱金属层和缓冲层，所述碱金属层包括碱金属含氧盐，所述薄膜太阳能电池除氧工艺应用于对所述碱金属含氧盐中氧的去除，其特征在于，所述薄膜太阳能电池除氧工艺包括：
将未形成所述缓冲层之前且已形成有所述碱金属层的衬底置于除氧剂中浸泡，去除所述碱金属含氧盐中的氧；其中，所述除氧剂包括可溶性碱性溶液。
2.根据权利要求1所述的薄膜太阳能电池除氧工艺，其特征在于，所述可溶性碱性溶液选自以下溶液中的一种或多种：弱碱溶液、除Na之外的碱溶液、除Na之外的强碱弱酸盐溶液。
3.根据权利要求2所述的薄膜太阳能电池除氧工艺，其特征在于，所述可溶性碱性溶液选自氨水、氢氧化钾溶液、亚硫酸钾溶液中的一种或多种。
4.根据权利要求1所述的薄膜太阳能电池除氧工艺，其特征在于，所述可溶性碱性溶液的浓度小于等于采用化学水浴沉积方法形成所述缓冲层的碱性溶液浓度。
5.根据权利要求1至4任一项所述的薄膜太阳能电池除氧工艺，其特征在于，所述可溶性碱性溶液选择氨水，所述氨水的质量分数为6％～25％。
6.根据权利要求1至4任一项所述的薄膜太阳能电池除氧工艺，其特征在于，所述可溶性碱性溶液选择氢氧化钾溶液，所述氢氧化钾溶液的浓度小于1mol/L。
7.根据权利要求1至4任一项所述的薄膜太阳能电池除氧工艺，其特征在于，所述将未形成所述缓冲层之前且已形成有所述碱金属层的衬底置于除氧剂中浸泡的步骤中，所述除氧剂的温度维持在18℃～90℃。
8.根据权利要求1至4任一项所述的薄膜太阳能电池除氧工艺，其特征在于，所述将未形成所述缓冲层之前且已形成有所述碱金属层的衬底置于除氧剂中浸泡的步骤中，浸泡时长为1min～20min。
9.根据权利要求1所述的薄膜太阳能电池除氧工艺，其特征在于，所述薄膜太阳能电池除氧工艺还包括：
将在除氧剂中浸泡并去除碱金属含氧盐中氧的衬底取出，洗涤，以除去所述衬底表面残余除氧剂。
10.根据权利要求9所述的薄膜太阳能电池除氧工艺，其特征在于，所述洗涤液选择采用化学水浴沉积方法形成所述缓冲层的碱性溶液。
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| US20110146795A1 (en) * | 2009-12-22 | 2011-06-23 | National Chin-Yi University Of Technology | Structure and preparation of cigs-based solar cells using an anodized substrate with an alkali metal precursor |
| US20140134784A1 (en) * | 2012-11-13 | 2014-05-15 | Tsmc Solar Ltd. | Metal-based solution treatment of cigs absorber layer in thin-film solar cells |
| JP2015099884A (ja) * | 2013-11-20 | 2015-05-28 | 日東電工株式会社 | Ｃｉｇｓ太陽電池の製造方法 |
| KR20150121748A (ko) * | 2014-04-21 | 2015-10-30 | 에스케이이노베이션 주식회사 | 원자층 증착법으로 형성된 버퍼층을 포함하는 태양전지 및 이의 제조방법 |
| CN108269868A (zh) * | 2018-01-29 | 2018-07-10 | 北京铂阳顶荣光伏科技有限公司 | 薄膜太阳能电池 |
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