CN110174814A - A kind of photolithography plate - Google Patents
A kind of photolithography plate Download PDFInfo
- Publication number
- CN110174814A CN110174814A CN201910496669.7A CN201910496669A CN110174814A CN 110174814 A CN110174814 A CN 110174814A CN 201910496669 A CN201910496669 A CN 201910496669A CN 110174814 A CN110174814 A CN 110174814A
- Authority
- CN
- China
- Prior art keywords
- daughter board
- motherboard
- chip
- photolithography plate
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
Abstract
The invention discloses a kind of photolithography plates, photolithography plate of the invention is made of motherboard and daughter board two parts, litho pattern is arranged on daughter board, operator holds motherboard, photolithography plate is installed and carries out photoetching process into litho machine, since the thickness of daughter board is higher than the height of heap glue, it is possible to effectively influence of the heap glue to photoetching is avoided, to effectively solve the problems, such as in the prior art because of litho pattern distortion caused by heap glue.
Description
Technical field
The present invention relates to technical field of laser detection, more particularly to a kind of photolithography plate.
Background technique
Photoetching technique is mostly important one of the technology of semiconductor manufacturing industry, wherein contact photolithography technology is due to it
Higher efficiency and input-output ratio, are widely used.But contact photolithography technology be applied to mercury cadmium telluride chip manufacturing when,
It will form corner heap glue during spin coating, to form high point, cause photolithography plate that cannot sufficiently contact with sample surface, make
Obtain the distortion of part litho pattern.
For corner heap glue, it can only be struck off, be taken time and effort, and technology stability with scalpel by skilled technologist at present
Difference.Therefore, how in heap glue realize photoetching become present urgent problem to be solved.
Summary of the invention
The present invention provides a kind of photolithography plates, to solve asking for the distortion of the litho pattern as caused by heap glue in the prior art
Topic.
The present invention provides a kind of photolithography plate, which includes: motherboard and daughter board；
The motherboard, for being held for operator；
The bottom surface of the daughter board is connect with the motherboard, and the top surface of the daughter board is equipped with litho pattern, the thickness of the daughter board
Degree is higher than the height of the corner heap glue of chip surface；
Light is set vertically to penetrate the photolithography plate by the motherboard and the daughter board.
Preferably, the daughter board is cube structure.
Preferably, the daughter board be pyramid, pyramidal top surface be equipped with litho pattern, pyramidal bottom surface with it is described
Motherboard connection.
Preferably, the area of the motherboard is greater than the area of the chip.
Preferably, the motherboard area is greater than the area of the daughter board.
Preferably, the chip is following any chip: silicon chip, cadmium telluride chip and mercury cadmium telluride chip.
The present invention has the beneficial effect that:
Photolithography plate of the invention is made of motherboard and daughter board two parts, and litho pattern is arranged on daughter board, operator's handle
Motherboard is held, photolithography plate is installed and carries out photoetching process into litho machine, since the thickness of daughter board is higher than the height of heap glue, it is possible to
Influence of the heap glue to photoetching effectively is avoided, to effectively solve in the prior art because what litho pattern caused by heap glue was distorted asks
Topic.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of motherboard provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram of daughter board provided in an embodiment of the present invention；
Fig. 3 is the structural schematic diagram of photolithography plate provided in an embodiment of the present invention；
Fig. 4 is the schematic diagram of photoetching process provided in an embodiment of the present invention.
Specific embodiment
The photolithography plate of the embodiment of the present invention is made of motherboard 1 and 2 two parts of daughter board, and litho pattern is arranged on daughter board 2, is led to
The thickness of daughter board 2 is crossed to avoid heap glue 3 from making photoetching slab warping, so that light can vertically penetrate photolithography plate, to avoid
The influence that heap glue 3 generates photoetching.Below in conjunction with attached drawing and embodiment, the present invention will be described in further detail.It answers
Work as understanding, the specific embodiments described herein are merely illustrative of the present invention, does not limit the present invention.
The embodiment of the invention provides a kind of photolithography plates, and referring to Fig. 1, which includes: motherboard 1 and son interconnected
Plate 2；
Photolithography plate is installed on litho machine by motherboard 1 for holding for operator；
The bottom surface 21 of daughter board 2 is connect with motherboard 1, and the top surface 22 of daughter board 2 is equipped with litho pattern, and the thickness of daughter board 2 is higher than core
The height of the corner heap glue 3 on 4 surface of piece；
Light is set vertically to penetrate photolithography plate by motherboard 1 and daughter board 2.
That is, the embodiment of the present invention is disappeared by being arranged litho pattern on daughter board 2 by the thickness of daughter board 2
Influence except corner heap glue 3 to photoetching, and photolithography plate is installed on litho machine by operator by holding motherboard 1, most
Enable light vertically through photolithography plate, to avoid the influence that heap glue 3 generates photoetching eventually, and avoids the work of glue side removal
Skill, to improve 4 photoetching efficiency of chip, 4 utilization rate of yield rate and irregular chip.
In addition, photoetching shape can be arranged in the embodiment of the present invention according to chip 4, that is, the photoetching shape of the embodiment of the present invention
Shape can be adjusted according to chip 4, thus the photolithography plate of the embodiment of the present invention can chip 4 to irregular shape into
Row photoetching, sufficiently to be utilized to chip 4.
It should be noted that the photolithography plate of the embodiment of the present invention can be applied in the photoetching of following any chip 4, e.g.,
Silicon chip, cadmium telluride chip and mercury cadmium telluride chip.
In addition, being plated with crome metal in motherboard 1 and the exposure outer surface of daughter board 2 in the embodiment of the present invention.
Specifically, the embodiment of the present invention will need to be arranged the position of daughter board 2 on motherboard 1, remove coating chromium, formed with
The identical windowing 11 of 2 shape of daughter board, and the bottom surface of daughter board 2 21 is adhered on motherboard 1, the structure of motherboard 1 is specific such as Fig. 2 institute
Show.
As shown in figure 3, the embodiment of the present invention is plated with crome metal, the bottom surface 21 of daughter board 2 and motherboard 1 in the side of daughter board 2
Connection, the top surface 22 of daughter board 2 are equipped with litho pattern, which can carry out any setting according to 4 shape of chip.
The daughter board 2 of the embodiment of the present invention is various cube structures, e.g., rectangular parallelepiped structure, cube structure, pyramid
Structure, etc..The height of cube structure is higher than the height of heap glue 3, thus the influence for avoiding heap glue 3 from generating photoetching.
When daughter board 2 is set as pyramid structure, pyramidal top surface 22 is equipped with litho pattern, pyramidal bottom surface 21
It is connect with motherboard 1.
When it is implemented, the embodiment of the present invention is held for ease of operation, and the area that motherboard 1 is arranged is greater than chip
4 area, and 1 area of motherboard is greater than the area of daughter board 2.
And the size of motherboard of the embodiment of the present invention 1 can be set according to litho machine, the embodiment of the present invention does not make this
It is specific to limit.
As shown in figure 4, the embodiment of the present invention eliminates influence of the corner heap glue 3 to photoetching by the thickness of daughter board 2, finally
Light is enabled vertically through litho pattern, to avoid the influence that heap glue 3 generates photoetching.
Although for illustrative purposes, the preferred embodiment of the present invention has been disclosed, those skilled in the art will recognize
It is various improve, increase and replace be also it is possible, therefore, the scope of the present invention should be not limited to the above embodiments.
Claims (6)
1. a kind of photolithography plate characterized by comprising motherboard and daughter board；
The motherboard, for being held for operator；
The bottom surface of the daughter board is connect with the motherboard, and the top surface of the daughter board is equipped with litho pattern, and the thickness of the daughter board is high
In the height of the corner heap glue of chip surface；
Light is set vertically to penetrate the photolithography plate by the motherboard and the daughter board.
2. photolithography plate according to claim 1, which is characterized in that
The daughter board is cube structure.
3. photolithography plate according to claim 1, which is characterized in that
The daughter board is pyramid, and pyramidal top surface is equipped with litho pattern, and pyramidal bottom surface is connect with the motherboard.
4. photolithography plate according to any one of claim 1-3, which is characterized in that
The area of the motherboard is greater than the area of the chip.
5. photolithography plate according to any one of claim 1-3, which is characterized in that
The motherboard area is greater than the area of the daughter board.
6. photolithography plate according to any one of claim 1-3, which is characterized in that
The chip is following any chip: silicon chip, cadmium telluride chip and mercury cadmium telluride chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910496669.7A CN110174814A (en) | 2019-06-10 | 2019-06-10 | A kind of photolithography plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910496669.7A CN110174814A (en) | 2019-06-10 | 2019-06-10 | A kind of photolithography plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110174814A true CN110174814A (en) | 2019-08-27 |
Family
ID=67698016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910496669.7A Pending CN110174814A (en) | 2019-06-10 | 2019-06-10 | A kind of photolithography plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110174814A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030028284A (en) * | 2001-09-28 | 2003-04-08 | 대우전자주식회사 | Method for forming a probe tip |
| CN103064247A (en) * | 2011-10-24 | 2013-04-24 | 信越化学工业株式会社 | Electronic grade glass substrate and making method |
-
2019
- 2019-06-10 CN CN201910496669.7A patent/CN110174814A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030028284A (en) * | 2001-09-28 | 2003-04-08 | 대우전자주식회사 | Method for forming a probe tip |
| CN103064247A (en) * | 2011-10-24 | 2013-04-24 | 信越化学工业株式会社 | Electronic grade glass substrate and making method |
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