CN110165544A - A kind of direct modulated laser structure - Google Patents
A kind of direct modulated laser structure Download PDFInfo
- Publication number
- CN110165544A CN110165544A CN201910522153.5A CN201910522153A CN110165544A CN 110165544 A CN110165544 A CN 110165544A CN 201910522153 A CN201910522153 A CN 201910522153A CN 110165544 A CN110165544 A CN 110165544A
- Authority
- CN
- China
- Prior art keywords
- laser
- circuit substrate
- chip
- support plate
- metal support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
- H01S5/02415—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling by using a thermo-electric cooler [TEC], e.g. Peltier element
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to field of optoelectronic devices, disclose a kind of direct modulated laser structure.Including semiconductor cooler, metal support plate, circuit substrate, chip of laser, the metal support plate is installed on the semiconductor cooler, the chip of laser and circuit substrate are installed on the metal support plate, the circuit substrate thickness is identical or close as the chip of laser, the transmission line graph for having metal layer to be formed on the circuit substrate, the transmission line graph are connected with the chip of laser surface pads by bonding gold wire.Using the above scheme, microwave signal transmission quality is improved；The energy of semiconductor cooler consumption is reduced, or improves refrigeration effect；Reduce the complexity of circuit substrate, reduces product cost.
Description
Technical field
The present invention relates to field of optoelectronic devices, especially a kind of direct modulated laser structure.
Background technique
In optoelectronic areas, laser is a kind of basic device.Wherein, directly modulation laser is that microwave signal is added
It is downloaded on laser, a kind of device that laser output light signal is modulated.
Typically directly modulation laser is frequently with semiconductor cooler progress thermostatic control.Specific design is usually half
A metal support plate is assembled on conductor refrigerator, and an aluminium nitride circuit substrate, chip of laser installation are assembled on metal support plate
In aluminum-nitride-based on piece, aluminum-nitride-based on piece has metallic circuit layer pattern, is divided into transmission line graph and ground connection figure two parts, connects
Ground part is connected by the metalized ground through-hole of aluminum-nitride-based on piece with metal support plate.With bonding gold wire by the surface of laser
Pad is connected with the transmission line of aluminum-nitride-based on piece.Microwave signal is loaded into chip of laser by transmission line and bonding gold wire
On, realize the modulation to chip of laser output optical signal.Ground connection on the chip of laser back side and aluminium nitride circuit substrate is schemed
Shape is in contact.
In said structure, laser is indirect earthed by the grounding through hole on circuit substrate, when added microwave signal
When frequency is higher, earthing effect is poor, influences the laser propagation effect of microwave signal.
In said structure, the pad on chip of laser and the transmission line on circuit substrate surface have certain altitude poor, lead
Cause the spun gold of connection longer, the inductance of spun gold is larger, influences the laser propagation effect of microwave signal.
In this type of design, chip of laser is heat source, and the heat issued is transmitted by aluminium nitride chip, metal support plate
To the upper surface of semiconductor cooler, then it is transferred to by semiconductor cooler the lower surface of semiconductor cooler, to maintain to swash
The constant temperature of light device chip.Semiconductor cooler heat transfer, requires the expenditure of energy.Heat between heat source and semiconductor cooler is logical
Road thermal resistance is smaller, then heat-transfer effect is better, and semiconductor cooler can obtain identical in the case where consuming less energy
Refrigeration effect (two surface temperature differences are bigger up and down for semiconductor cooler, and refrigeration effect is better), or consuming identical energy
In the case of, obtain better refrigeration effect.
In said structure, the aluminium nitride circuit substrate between chip of laser and metal support plate, increases laser core
Thermal resistance between piece and metal support plate, to affect the performance of refrigerator refrigeration effect.
Summary of the invention
The technical problems to be solved by the present invention are: in view of the above problems, providing a kind of directly modulation laser
Device structure.
The technical solution adopted by the invention is as follows: a kind of direct modulated laser structure, including semiconductor cooler, metal
Support plate, circuit substrate, chip of laser are installed the metal support plate on the semiconductor cooler, are pacified on the metal support plate
The chip of laser and circuit substrate are filled, the circuit substrate thickness is identical or close as the chip of laser, the electricity
The transmission line graph that roadbed on piece has metal layer to be formed, the transmission line graph and the chip of laser surface pads pass through key
Alloy wire connection.
Further, the chip of laser is directly placed on the metal support plate.
Further, the chip of laser is grounded by the metal support plate.
Further, the circuit substrate is using quartz.
Further, the circuit substrate uses glass.
Further, the circuit substrate uses aluminium oxide ceramics.
Further, the circuit substrate uses organic circuit plate.
Compared with prior art, having the beneficial effect that using technical solution of the present invention by adopting the above technical scheme, due to
Circuit substrate and chip of laser thickness are close, and chip of laser and circuit substrate are all placed on metal support plate, therefore are bonded
Two solder joints of spun gold can reduce in the distance of vertical direction, so that the length of entire bonding gold wire also reduces, equivalent inductance
Reduce, microwave signal transmission effect is more preferable.
Be grounded since the chip of laser back side directly contacts metal support plate, be not it is indirect earthed by grounding through hole,
Reduce the influence to microwave signal transmission.
Since chip of laser is directly installed on metal support plate, reduce aluminium nitride circuit substrate bring thermal resistance, swashs
Thermal resistance between light device chip and semiconductor cooler is smaller, and the refrigeration effect of semiconductor cooler gets a promotion.
It is bigger to the material selection face of circuit substrate due to the capacity of heat transmission without the concern for circuit substrate, it can choose
Any circuit substrate material (such as quartz, glass, aluminium oxide ceramics, organic circuit plate for being suitable for making microwave transmission line
Deng), without being confined to the high aluminium nitride ceramics of thermal conductivity.
Due to eliminating grounding through hole, circuit substrate manufacturing procedure is reduced, and is dropped in terms of material and difficulty of processing two
The low cost of circuit substrate.
Detailed description of the invention
Fig. 1 is directly modulated laser structure side view of the invention.
Fig. 2 is directly modulated laser structure top view of the invention.
Fig. 3 is microwave transmission performance comparison figure.
Fig. 4 is laser heat simulation model of the present invention.
Specific embodiment
The present invention is described further with reference to the accompanying drawing:
As shown in Figs. 1-2, a kind of direct modulated laser structure, including semiconductor cooler, metal support plate, circuit base
Piece, chip of laser.
Metal support plate is installed on semiconductor cooler.
Circuit substrate and chip of laser are directly installed on metal support plate, and chip of laser is as close to circuit base
Piece installation.
Circuit substrate is made of common alumina ceramic material, the circuit substrate thickness and chip of laser thickness of use
It is identical, it is 100 microns, can permit circuit substrate thickness and chip of laser thickness is close, be no more than close to phase difference thickness
The 20% of chip of laser thickness.Electric circuit metal layer on circuit substrate is not required to production ground connection figure, need to only make a Duan Weibo
Line graph is transmitted, production grounding through hole is also not required on circuit substrate.Circuit substrate processing technology is simple, at low cost.As shown in Figure 4
For laser heat simulation model of the present invention.
The pad of chip of laser upper surface is connected with transmission line graph with bonding gold wire.Due to laser upper surface and
Metallic pattern on circuit substrate is in same level, therefore bonding gold wire can be as short as few 0.1mm than traditional approach.Fig. 3 institute
Show be microwave transmission performance in the case of two kinds comparison diagram.It can be seen from the figure that improved reflection coefficient is within 40GHz
Broadband range in optimize 1~2dB.
Since laser is directly installed on metal support plate, heat-transfer path is shorter, and thermal resistance is smaller, and heat dissipation is more preferable.It is right respectively
Two kinds of models of typical laser structure and laser structure of the present invention carry out hot emulation, and setting chip of laser power consumption is 0.2W.
As shown in table 1, when environment temperature is 70 DEG C, so that chip temperature is stabilized to 20 DEG C, then typical laser structure is partly led
Chiller power consumption is 1.25W, and the power consumption of the semiconductor cooler of laser structure of the present invention is 1.08W.In mutually synthermal ring
The power consumption 0.17W of TEC can be reduced under the conditions of border.
Simulation result when 1 environment temperature of table is 70 DEG C
| Typical laser | Laser of the present invention | |
| Semiconductor cooler power consumption | 1.25W | 1.08W |
In addition, chip of laser temperature is stabilized to 20 DEG C, Typical laser when the power consumption of semiconductor cooler is 1.25W
Device structure works in the case where environment temperature is 70 DEG C, and laser of the present invention can work in 73.6 DEG C of higher ring
At a temperature of border, as shown in table 2.
Simulation result when 2 semiconductor cooler power consumption of table is 1.25W
| Typical laser | Laser of the present invention | |
| Environment temperature | 70℃ | 73.6℃ |
The invention is not limited to specific embodiments above-mentioned.The present invention, which expands to, any in the present specification to be disclosed
New feature or any new combination, and disclose any new method or process the step of or any new combination.If this
Field technical staff is altered or modified not departing from the unsubstantiality that spirit of the invention is done, should belong to power of the present invention
The claimed range of benefit.
Claims (7)
1. a kind of direct modulated laser structure, which is characterized in that including semiconductor cooler, metal support plate, circuit substrate, swash
Light device chip installs the metal support plate on the semiconductor cooler, the chip of laser is installed on the metal support plate
And circuit substrate, the circuit substrate thickness is identical or close as the chip of laser, has metal layer on the circuit substrate
The transmission line graph of formation, the transmission line graph and the chip of laser surface pads are connected by bonding gold wire.
2. direct modulated laser structure as described in claim 1, which is characterized in that the chip of laser is directly placed at
On the metal support plate.
3. direct modulated laser structure as claimed in claim 2, which is characterized in that the chip of laser passes through the gold
Belong to support plate ground connection.
4. direct modulated laser structure as described in claim 1, which is characterized in that the circuit substrate is using quartz.
5. direct modulated laser structure as described in claim 1, which is characterized in that the circuit substrate uses glass.
6. direct modulated laser structure as described in claim 1, which is characterized in that the circuit substrate is made pottery using aluminium oxide
Porcelain.
7. direct modulated laser structure as described in claim 1, which is characterized in that the circuit substrate uses organic circuit
Plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910522153.5A CN110165544A (en) | 2019-06-17 | 2019-06-17 | A kind of direct modulated laser structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910522153.5A CN110165544A (en) | 2019-06-17 | 2019-06-17 | A kind of direct modulated laser structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110165544A true CN110165544A (en) | 2019-08-23 |
Family
ID=67625767
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910522153.5A Pending CN110165544A (en) | 2019-06-17 | 2019-06-17 | A kind of direct modulated laser structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110165544A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112630247A (en) * | 2020-12-31 | 2021-04-09 | 厦门超新芯科技有限公司 | Frozen sample platform of scanning electron microscope |
| WO2023108954A1 (en) * | 2021-12-13 | 2023-06-22 | 探维科技(北京)有限公司 | Laser transmitter, laser radar apparatus and terminal device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1764026A (en) * | 2004-10-20 | 2006-04-26 | 中国科学院半导体研究所 | The semiconductor laser high-frequency encapsulation is with having the heat sink of microstrip structure |
| US9001856B1 (en) * | 2014-03-20 | 2015-04-07 | Coherent, Inc. | Diode laser bar mounted on a copper heat-sink |
| CN205212174U (en) * | 2015-12-07 | 2016-05-04 | 西安炬光科技股份有限公司 | Semiconductor laser packaging structure |
| CN105703213A (en) * | 2016-04-22 | 2016-06-22 | 西安炬光科技股份有限公司 | Heat sink insulated liquid refrigeration semiconductor laser and stack array thereof |
-
2019
- 2019-06-17 CN CN201910522153.5A patent/CN110165544A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1764026A (en) * | 2004-10-20 | 2006-04-26 | 中国科学院半导体研究所 | The semiconductor laser high-frequency encapsulation is with having the heat sink of microstrip structure |
| US9001856B1 (en) * | 2014-03-20 | 2015-04-07 | Coherent, Inc. | Diode laser bar mounted on a copper heat-sink |
| CN205212174U (en) * | 2015-12-07 | 2016-05-04 | 西安炬光科技股份有限公司 | Semiconductor laser packaging structure |
| CN105703213A (en) * | 2016-04-22 | 2016-06-22 | 西安炬光科技股份有限公司 | Heat sink insulated liquid refrigeration semiconductor laser and stack array thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112630247A (en) * | 2020-12-31 | 2021-04-09 | 厦门超新芯科技有限公司 | Frozen sample platform of scanning electron microscope |
| WO2023108954A1 (en) * | 2021-12-13 | 2023-06-22 | 探维科技(北京)有限公司 | Laser transmitter, laser radar apparatus and terminal device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108390255A (en) | Optical secondary module and optical module | |
| CN110010546B (en) | Manufacturing process of phase change heat dissipation structure for vertically placing radio frequency module | |
| CN101521194B (en) | High-speed photoelectric subassembly | |
| CN101175389A (en) | Cooling substrate of micro heat pipe | |
| CN110165544A (en) | A kind of direct modulated laser structure | |
| CN109239861A (en) | A kind of silicon light optical transceiver module | |
| CN102385124A (en) | Internal-cooled heat-blocking modular laser packaging system | |
| CN115881663B (en) | Novel high-power tile type TR module | |
| CN106814422A (en) | A kind of photon chip structure of controlling temperature based on TEC | |
| CN102208498A (en) | Method and device for packaging light-emitting diode (LED) high-heat-conduction insulated base | |
| CN206638852U (en) | A kind of photon chip structure of controlling temperature based on TEC | |
| CN204168701U (en) | Graphite heat conducting foam liner | |
| CN103363357A (en) | LED light source with well heat dissipation effect | |
| JP2020530200A (en) | How to manufacture a light emitting device | |
| CN202444696U (en) | High-thermal conductivity combined circuit board | |
| CN203707560U (en) | Packaging structure of photoelectronic integrated chip | |
| CN203521463U (en) | High-thermal conductivity LED-COB packaging substrate | |
| CN110137789B (en) | Thermal isolation high-frequency signal transmission structure in direct modulation laser | |
| CN101720407A (en) | A light-emitting diode lighting device | |
| CN110010492B (en) | Manufacturing method of phase change radiator for radio frequency micro-system assembly | |
| CN109461753B (en) | Large-injection flip micron LED chip and preparation method thereof | |
| CN109103153B (en) | Power device and preparation method thereof | |
| CN102683507A (en) | Light source module structure and producing method of light source module | |
| CN203453808U (en) | LED light source with good heat dissipation effect | |
| CN208587747U (en) | A kind of LED patch for being easy to radiate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190823 |