CN115881663B - Novel high-power tile type TR module - Google Patents
Novel high-power tile type TR module Download PDFInfo
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- CN115881663B CN115881663B CN202310062581.0A CN202310062581A CN115881663B CN 115881663 B CN115881663 B CN 115881663B CN 202310062581 A CN202310062581 A CN 202310062581A CN 115881663 B CN115881663 B CN 115881663B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a novel high-power tile-type TR module which sequentially comprises a cover plate layer, a ceramic surrounding frame layer, a radio frequency chip layer, a molybdenum copper carrier plate layer and a heat dissipation structure from top to bottom; a plurality of cover plates are arranged on the cover plate layer and are used for sealing a plurality of corresponding frame holes on the ceramic surrounding frame layer; the ceramic surrounding frame layer is an HTCC surrounding frame made of high-temperature co-fired ceramic technology HTCC, the surrounding frame is of a multi-layer structure, radio frequency wiring and control wiring are arranged in the surrounding frame, a metal bonding pad is arranged at the edge of the surrounding frame, close to the top layer of the cover plate layer, of the surrounding frame, and devices or circuits required for maintaining the normal performance of a radio frequency circuit are arranged on the radio frequency chip layer; the radiating structure is provided with a radiating metal block, and is provided with a radio frequency connector or an insulator for transmitting radio frequency signals to the antenna end. Compared with the existing tile-type TR module, the invention has smaller volume, lighter weight and thinner thickness, and can be applied to a scene with larger power requirement.
Description
Technical Field
The invention relates to the field of wireless communication equipment, in particular to a novel brick type TR module.
Background
In phased array radar/communication systems, the core component that determines the overall system performance is the phased array antenna, while the core weight of the active phased array antenna is the transceiver module (TR module), which occupies a significant portion of the weight of the overall system, as well as the power consumption and cost of most of the weight. The overall architecture of the TR module is broadly divided into two ways, brick and tile. The brick type TR module has the advantages of simple design, large heat capacity, strong engineering capability and high maturity, but is generally thick and heavy, has poor miniaturization capability and limits the microsystemization of the antenna. The tile-type TR module has small volume and light weight, can generally adopt a three-dimensional laminated structure, has high functional integration level, is more beneficial to the multifunctional integration or microsystemization of the antenna, but has small heat capacity due to the advantages, and is not beneficial to high-power application scenes.
In the high-power application scene, the tile-type structure has small heat capacity and preferential heat dissipation measures and capacities, so that the tile-type structure is often adopted. However, with the increasing demands of application scenes for high power, microsystem and low cost, the tile structure cannot meet all core demands, and the tile structure has smaller volume, lighter weight and less use of connectors, which is more beneficial to microsystem and low cost, and therefore, the tile structure has smaller heat capacity and limited heat scattering measures, which is unfavorable for high-power application scenes.
In the existing design, there is a high-power tile phased array antenna design, such as "a high-power tile phased array antenna" disclosed in CN110797624a, which uses Flip-chip to Flip-chip the chip on the printed board, and this way is beneficial to high-power heat dissipation, but does not solve the problem of easy pollution of the chip, has low productivity, and cannot solve the problem of high air tightness.
The novel airtight tile disclosed in CN113451732B is a phased array antenna, and adopts a dielectric cavity layer and a ball-planting structure to realize the high-density and high-airtight tile type phased array antenna, so that the novel airtight tile is simple and convenient to assemble and small in size, but cannot be applied to high-power tile type application scenes because the ball-planting structure has lower limit of heat dissipation capacity, such as a micro-channel is designed in a dielectric cavity, the cost is relatively high, the heat flow path is long, and the rapid heat dissipation is not facilitated.
Along with the continuous evolution of application scenes towards ultra-high power, microsystemization and low cost, the traditional tile structure and the traditional tile structure cannot meet the application requirements. Therefore, a new architecture for seeking rapid heat dissipation of the tile-type TR module is needed under the application prospect of high power and microsystem.
Disclosure of Invention
The invention aims at: aiming at the problems, the novel high-power tile-type TR module is provided to solve the problem that the existing tile-type and tile-type TR modules cannot meet the requirements of high power, microsystemization, low cost and the like.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the novel high-power tile-type TR module sequentially comprises a cover plate layer 1, a ceramic surrounding frame layer 2, a radio frequency chip layer 3, a molybdenum copper carrier plate layer 4 and a heat dissipation structure 5 from top to bottom;
a plurality of cover plates 11 are arranged on the cover plate layer 1 and are used for sealing a plurality of corresponding frame holes on the ceramic surrounding frame layer 2;
the ceramic surrounding frame layer 2 is an HTCC surrounding frame 21 made of high-temperature co-fired ceramic technology HTCC, the HTCC surrounding frame 21 is of a multi-layer structure, a plurality of through frame holes are formed in the middle of the HTCC surrounding frame 21, radio frequency wiring and control wiring are arranged in the HTCC surrounding frame 21, a metal bonding pad 26 is arranged on the HTCC surrounding frame 21 close to the top layer edge of the cover plate layer 1, and the metal bonding pad 26 is provided with a ball planting 22 which is interconnected with the external wiring to transmit radio frequency and control signals; the HTCC peripheral frame 21 is provided with a top step 23 close to the top layer of the frame hole edge of the cover plate layer 1, and is used for supporting the cover plate layer 1, and welding is carried out at the top step 23 to seal a gap between the step and the cover plate layer; the HTCC surrounding frame 21 is provided with a bottom step 24 near the bottom layer of the edge of the frame hole of the radio frequency chip layer 3, and a gold wire bonding pad 25 is arranged on the bottom step 24 and is interconnected with the chip through gold wires;
the radio frequency chip layer 3 is provided with devices or circuits required for maintaining the normal performance of the radio frequency circuit;
the molybdenum-copper carrier plate layer 4 adopts molybdenum-copper as a carrier plate layer, and an opening 41 is arranged on the molybdenum-copper carrier plate layer 4 to pass through the inner core of the radio frequency connector; the molybdenum-copper carrier plate layer 4 is fixedly assembled with the ceramic surrounding frame layer 2, and the radio frequency chip layer 3 is fixed on the molybdenum-copper carrier plate layer 4; the molybdenum copper has a thermal expansion coefficient which is more matched with that of the radio frequency chip, so that the radio frequency chip is prevented from being physically damaged by thermal stress in a high-low temperature scene.
The heat dissipation structure 5 is provided with a heat dissipation metal block 51, and a radio frequency connector or insulator 52 for transmitting radio frequency signals to the antenna end. The heat dissipation metal block 51 has high heat dissipation capacity and a certain heat capacity, can be assembled with an external heat dissipation mechanism, and can rapidly and completely conduct heat of the radio frequency chip to the external heat dissipation mechanism.
Preferably, a plurality of wave-absorbing material blocks 12 corresponding to the size of the frame holes of the ceramic surrounding frame layer 2 are arranged at the bottom of the cover plate layer 1.
Preferably, the chip 31 and the microwave board 32 are disposed on the radio frequency chip layer 3.
Preferably, the wires on the radio frequency chip layer 3 are not in contact with the cover plate layer 1.
Preferably, the molybdenum copper carrier plate layer 4 and the ceramic surrounding frame layer 2 are assembled through a silver copper welding process. The welding temperature is far higher than the common assembly temperature gradient of Jin Xihan and the like, and the assembly of the module is more facilitated. The silver-copper welding method has the advantages that more available temperature gradients need to be applied in a high-power application scene, and the silver-copper welding brings more convenient engineering application capability for module assembly.
Preferably, the radio frequency chip layer 3 is assembled on the molybdenum copper carrier layer 4 through gold soldering. Is beneficial to high-power heat conduction.
Preferably, an SMP rf connector or insulator 52 is disposed on the heat dissipating structure 5.
Due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. compared with the architecture design of the existing tile-type TR module, the architecture is more suitable for high-power application scenes, can rapidly and completely transfer heat of a high-power chip in the module to an external heat dissipation mechanism, and is more beneficial to the high-power application scenes of the system.
2. The structural design of the tile-type TR module adopts the HTCC surrounding frame, is interconnected with external components in a ball planting mode, has the advantages of simple structure, high integration level, small volume and light weight, and is more beneficial to the micro-systemization and miniaturization application scene of the system.
3. The tile-type TR module adopts the HTCC surrounding frame, has high dielectric constant and high processing precision, is more beneficial to adopting a radio frequency coaxial transition structure form, and is suitable for microwave frequency bands with low frequency. Meanwhile, the power supply control wiring is integrated, the complexity of the module is simplified, and the production and assembly procedures are reduced.
4. The tile-type TR module adopts the HTCC surrounding frame, has high sintering temperature and high welding temperature with the molybdenum-copper carrier plate, is far higher than the conventional assembly process temperature of the module, and is convenient for the upgrading and reconstruction of the existing production line greatly by the temperature gradient of the assembly of the module under the conventional process.
5. The heat dissipation structure adopted by the tile-type TR module can fix the radio frequency connector on one hand, and the metal block plays a role of heat capacity on the other hand, can rapidly disperse the heat of the chip and conduct the heat to the external heat dissipation mechanism, so that the heat dissipation efficiency is improved.
Drawings
Fig. 1 is an overall construction diagram of the present invention.
Fig. 2 is an exploded construction view of the present invention.
FIG. 3 is a schematic diagram of a cover sheet layer of the present invention.
FIG. 4 is a schematic view of a ceramic surrounding frame layer of the present invention.
Fig. 5 is a schematic view of a heat dissipation structure according to the present invention.
In the figure, 1 is a cover plate layer, 2 is a ceramic surrounding frame layer, 3 is a radio frequency chip layer, 4 is a molybdenum-copper carrier plate layer, 5 is a heat dissipation structure, 11 is a cover plate, 12 is a wave-absorbing material block, 21 is an HTCC surrounding frame, 22 is a ball-planting, 23 is a top layer step, 24 is a bottom layer step, 25 is a gold wire bonding pad, 26 is a metal bonding pad, 31 chips, 32 is a microwave plate, 41 is an opening, 51 is a heat dissipation metal block, and 52 is a radio frequency connector or insulator.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As shown in fig. 1, the embodiment provides a novel high-power tile-type TR module, which sequentially comprises a cover plate layer 1, a ceramic surrounding frame layer 2, a radio frequency chip layer 3, a molybdenum-copper carrier plate layer 4 and a heat dissipation structure 5 from top to bottom;
a plurality of cover plates 11 are arranged on the cover plate layer 1 and are used for sealing a plurality of corresponding frame holes on the ceramic surrounding frame layer 2;
as shown in fig. 4, the ceramic surrounding frame layer 2 is an HTCC surrounding frame 21 made by adopting a high-temperature co-firing ceramic process HTCC, the HTCC surrounding frame 21 is in a multi-layer structure, a plurality of through frame holes are formed in the middle of the HTCC surrounding frame 21, radio frequency wires and control wires are arranged in the HTCC surrounding frame 21, a metal bonding pad 26 is arranged at the edge of the HTCC surrounding frame 21, which is close to the top layer of the cover plate layer 1, and the metal bonding pad 26 is provided with a ball-planting 22 which is interconnected with the external wires to transmit radio frequency and control signals; the HTCC peripheral frame 21 is provided with a top step 23 close to the top layer of the frame hole edge of the cover plate layer 1, and is used for supporting the cover plate layer 1, and welding is carried out on the top step 23 so as to seal a gap between the step and the cover plate layer; the HTCC surrounding frame 21 is provided with a bottom step 24 near the bottom layer of the edge of the frame hole of the radio frequency chip layer 3, and a gold wire bonding pad 25 is arranged on the bottom step 24 and is interconnected with the chip through gold wires;
the HTCC surrounding frame 21 has the advantages of high dielectric constant, good structural strength, stable physical and chemical properties, ultrahigh sintering temperature and the like, and is beneficial to pulling a temperature gradient in the production and assembly process of the Yu Wa TR module, so that the engineering realization difficulty is reduced, and the mass productivity is improved.
The radio frequency chip layer 3 is provided with devices or circuits required for maintaining the normal performance of the radio frequency circuit;
the molybdenum-copper carrier layer 4 adopts molybdenum-copper as a carrier layer, and as shown in fig. 2, an opening 41 is formed on the molybdenum-copper carrier layer 4 to pass through the inner core of the radio frequency connector; the molybdenum-copper carrier plate layer 4 is fixedly assembled with the ceramic surrounding frame layer 2, and the radio frequency chip layer 3 is fixed on the molybdenum-copper carrier plate layer 4; the molybdenum copper has a thermal expansion coefficient which is more matched with that of the radio frequency chip, so that the radio frequency chip is prevented from being physically damaged by thermal stress in a high-low temperature scene.
As shown in fig. 5, the heat dissipation structure 5 is provided with a heat dissipation metal block 51, and a radio frequency connector or insulator 52 for transmitting radio frequency signals to the antenna end. The heat dissipation metal block 51 has high heat dissipation capacity and a certain heat capacity, can be assembled with an external heat dissipation mechanism, and can rapidly and completely conduct heat of the radio frequency chip to the external heat dissipation mechanism.
As shown in fig. 3, a plurality of wave-absorbing material blocks 12 corresponding to the size of the frame holes of the ceramic surrounding frame layer 2 are arranged at the bottom of the cover plate layer 1. The thickness of the block 12 of absorbing material is related to the operating frequency, which acts to prevent radio frequency self-excitation and to flatten the radio frequency gain.
As shown in fig. 2, a chip 31 and a microwave board 32 are disposed on the radio frequency chip layer 3.
The gold wires on the radio frequency chip layer 3 are not contacted with the cover plate layer 1, and the gold wires and the cover plate layer are not interfered.
Preferably, the molybdenum copper carrier plate layer 4 and the ceramic surrounding frame layer 2 are assembled through a silver copper welding process. The welding temperature is far higher than the common assembly temperature gradient of Jin Xihan and the like, and the assembly of the module is more facilitated. The silver-copper welding method has the advantages that more available temperature gradients need to be applied in a high-power application scene, and the silver-copper welding brings more convenient engineering application capability for module assembly.
The radio frequency chip layer 3 is assembled on the molybdenum copper carrier layer 4 through gold soldering. Is beneficial to high-power heat conduction.
The heat dissipation structure 5 is provided with an SMP rf connector or insulator 52 for transmitting rf signals to the antenna interface. The heat dissipation structure can be interconnected with the system water cooling plate through heat conduction silicone grease or by adopting a direct welding mode, so that the heat dissipation efficiency is greatly improved.
The high-power tile type TR module structure of the embodiment realizes high-power, miniaturization and low-cost application requirements based on the multi-layer HTCC surrounding frame and the novel heat dissipation structure.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims of this invention, which are within the skill of those skilled in the art, can be made without departing from the spirit and scope of the invention disclosed herein.
Claims (1)
1. The novel high-power tile-type TR module is characterized by sequentially comprising a cover plate layer (1), a ceramic surrounding frame layer (2), a radio frequency chip layer (3), a molybdenum copper carrier plate layer (4) and a heat dissipation structure (5) from top to bottom;
a plurality of cover plates (11) are arranged on the cover plate layer (1) and are used for sealing a plurality of corresponding frame holes on the ceramic surrounding frame layer (2);
the ceramic surrounding frame layer (2) is an HTCC surrounding frame (21) made of a high-temperature co-fired ceramic process HTCC, the HTCC surrounding frame (21) is of a multi-layer structure, a plurality of through frame holes are formed in the middle of the HTCC surrounding frame (21), radio frequency wiring and control wiring are arranged in the HTCC surrounding frame (21), a metal bonding pad (26) is arranged at the edge of the HTCC surrounding frame (21) close to the top layer of the cover plate layer (1), and a planting ball (22) is arranged on the metal bonding pad (26) and is interconnected with the external wiring to transmit radio frequency and control signals; the HTCC surrounding frame (21) is provided with a top layer step (23) close to the top layer of the frame hole edge of the cover plate layer (1) and used for supporting the cover plate layer (1), and welding is carried out at the top layer step (23) to seal a gap between the step and the cover plate layer; the HTCC surrounding frame (21) is provided with a bottom layer step (24) close to the bottom layer of the edge of the frame hole of the radio frequency chip layer (3), and a gold wire bonding pad (25) is arranged on the bottom layer step (24) and is interconnected with the chip through gold wires;
the radio frequency chip layer (3) is provided with devices or circuits required for maintaining the normal performance of the radio frequency circuit;
the molybdenum-copper carrier plate layer (4) adopts molybdenum-copper as a carrier plate layer, and an opening (41) is arranged on the molybdenum-copper carrier plate layer (4) so as to pass through the inner core of the radio frequency connector; the molybdenum-copper carrier plate layer (4) is fixedly assembled with the ceramic surrounding frame layer (2), and the radio frequency chip layer (3) is fixed on the molybdenum-copper carrier plate layer (4);
the radiating structure (5) is provided with a radiating metal block (51) and a radio frequency connector or insulator (52) for transmitting radio frequency signals to the antenna end;
the bottom of the cover plate layer (1) is provided with a plurality of wave-absorbing material blocks (12) corresponding to the frame hole positions of the ceramic surrounding frame layer (2);
a chip (31) and a microwave board (32) are arranged on the radio frequency chip layer (3);
the gold wire on the radio frequency chip layer (3) is not contacted with the cover plate layer (1);
the molybdenum-copper carrier plate layer (4) and the ceramic surrounding frame layer (2) are assembled through a silver-copper welding process;
the radio frequency chip layer (3) is assembled on the molybdenum copper carrier layer (4) through gold soldering.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310062581.0A CN115881663B (en) | 2023-01-16 | 2023-01-16 | Novel high-power tile type TR module |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310062581.0A CN115881663B (en) | 2023-01-16 | 2023-01-16 | Novel high-power tile type TR module |
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| CN115881663A CN115881663A (en) | 2023-03-31 |
| CN115881663B true CN115881663B (en) | 2023-05-26 |
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| CN202310062581.0A Active CN115881663B (en) | 2023-01-16 | 2023-01-16 | Novel high-power tile type TR module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117040561B (en) * | 2023-08-08 | 2024-04-19 | 石家庄烽瓷电子技术有限公司 | Tile type multi-beam system based on HTCC |
| CN117374575B (en) * | 2023-12-08 | 2024-02-09 | 石家庄军特电子科技有限公司 | Radio frequency signal transmitting module |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20030150641A1 (en) * | 2002-02-14 | 2003-08-14 | Noyan Kinayman | Multilayer package for a semiconductor device |
| CN108231698A (en) * | 2017-12-29 | 2018-06-29 | 中国电子科技集团公司第十三研究所 | Ceramic pad array shell |
| CN213583746U (en) * | 2020-11-05 | 2021-06-29 | 中电天奥有限公司 | Millimeter wave chip flip BGA packaging structure based on high-temperature co-fired ceramic |
| CN113451732B (en) * | 2021-08-30 | 2021-11-23 | 成都雷电微力科技股份有限公司 | Novel airtight tile formula phased array antenna |
| CN113838845B (en) * | 2021-11-26 | 2022-02-11 | 成都雷电微力科技股份有限公司 | TR assembly based on three-dimensional stacked airtight package and assembling method |
| CN216597984U (en) * | 2021-12-20 | 2022-05-24 | 成都瑞迪威科技有限公司 | Antenna interconnection device |
| CN113948848B (en) * | 2021-12-20 | 2022-04-12 | 成都瑞迪威科技有限公司 | Antenna interconnection structure with good grounding |
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