CN203707560U - Packaging structure of photoelectronic integrated chip - Google Patents
Packaging structure of photoelectronic integrated chip Download PDFInfo
- Publication number
- CN203707560U CN203707560U CN201420040487.1U CN201420040487U CN203707560U CN 203707560 U CN203707560 U CN 203707560U CN 201420040487 U CN201420040487 U CN 201420040487U CN 203707560 U CN203707560 U CN 203707560U
- Authority
- CN
- China
- Prior art keywords
- transition block
- integrated chip
- radio frequency
- direct current
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004806 packaging method and process Methods 0.000 title abstract 5
- 230000007704 transition Effects 0.000 claims abstract description 83
- 229910000679 solder Inorganic materials 0.000 claims abstract description 5
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000013307 optical fiber Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 239000002184 metal Substances 0.000 abstract 2
- 229910015363 Au—Sn Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a packaging structure of a photoelectronic integrated chip, which comprises a metal pipe shell, an integrated chip, a radio frequency transition block, a direct current transition block and a chip transition block, wherein the integrated chip, the radio frequency transition block, the direct current transition block and the chip transition block are all installed in the metal pipe shell, the integrated chip is attached to an Au-Sn solder area on the chip transition block, the radio frequency transition block and the direct current transition block are electrically connected to the integrated chip, the direct current transition block is arranged right above the radio frequency transition block, the direct current transition block and the radio frequency transition block are provided with a cushion block therebetween, and the radio frequency transition block and the direct current transition block adopt an upper and lower layer arrangement mode and are connected therebetween by adopting the cushion block. Therefore, compared with a packaging structure designed in a plane, the packaging structure of the photoelectronic integrated chip can effectively reduce the packaging space and enable a product to be miniaturized.
Description
Technical field
The utility model relates to field of optoelectronic devices, relates in particular to a kind of encapsulating structure of photoelectron integrated chip.
Background technology
Photon is integrated is one of hot issue of optical communication industry in recent years, is the generally acknowledged future thrust of industry for many years.But photon integrated technology proposed over more than 30 year, see that from the commercial situation of industry entirety is still in the junior stage, also do not reach the condition of scale commercialization, trace it to its cause or be limited by the restriction of photon integrated technology itself and single, the immature property of supply chain.
Photon is integrated according to realizing integrated technical approach classification, can be divided into monolithic integrated (Monolithic Integration) and mix integrated (Hybrid Integration).The wherein integrated various functions that realize expection on single substrate that refer to of monolithic.Mix integrated finger and adopt different materials to realize, then these different functional parts are fixed on a unified substrate.In general, the integrated employing monolithic integration mode that is relatively applicable to of level, vertical integrated relatively more applicable employing mixed integration mode.But the long term object of industry or monolithic are integrated.
Due to the develop rapidly of Networks of Fiber Communications, the optical network device of being constructed by discrete opto-electronic device can not meet its requirement.And integrated chip be realize large capacity, low-power consumption optical-fiber network must rely on technology.Existing integrated chip size has reached micron number magnitude, and this encapsulates and have higher requirement device miniaturization.Long or meticulous spun gold all with cause inductive effect, introduce more parasitic parameter, affect the high frequency performance of whole array.And the problem of the height caused heat dissipation problem of integrated array chip and coupling efficiency is also difficult to solve.
Therefore be necessary to design a kind of encapsulating structure of novel photoelectron integrated chip, to overcome the problems referred to above.
Utility model content
The purpose of this utility model is to overcome the defect of prior art, and a kind of encapsulating structure of the photoelectron integrated chip that reduces encapsulated space is provided.
The utility model is achieved in that
The utility model provides a kind of encapsulating structure of photoelectron integrated chip, comprises Can, integrated chip, radio frequency transition block, direct current transition block and chip transition block; Described integrated chip, described radio frequency transition block, described direct current transition block and described chip transition block are all installed in described Can, described integrated chip is attached at the golden tin solder region in described chip transition block, described radio frequency transition block and described direct current transition block are all electrically connected described integrated chip, and described direct current transition block be located at described radio frequency transition block directly over, between described direct current transition block and described radio frequency transition block, be provided with cushion block.
Further, described direct current transition block is all gold-plated with the relative two sides of described radio frequency transition block.
Further, described radio frequency transition block is provided with multiple via holes.
Further, the encapsulating structure of described photoelectron integrated chip also comprises a tungsten copper heat-sink, described tungsten copper heat-sink is located in described Can, and described tungsten copper heat-sink top is provided with collimating lens and condenser lens, between described collimating lens and described condenser lens, is provided with isolator.
Further, also comprise optical fiber component, described optical fiber component and described collimating lens, described condenser lens are located along the same line, and are fixed on described tungsten copper heat-sink.
Further, described tungsten copper heat-sink below is provided with semiconductor cooler, and described semiconductor cooler is positioned at described Can.
The utlity model has following beneficial effect:
Described radio frequency transition block and described direct current transition block adopt levels setting, and the middle cushion block that uses connects, therefore with respect to the encapsulating structure planar designing, the encapsulating structure of described photoelectron integrated chip can effectively reduce encapsulated space, makes the miniaturization of products.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The stereogram of the encapsulating structure of the photoelectron integrated chip that Fig. 1 provides for the utility model embodiment;
The radio frequency transition block that Fig. 2 provides for the utility model embodiment and the stereogram of described direct current transition block.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making all other embodiment that obtain under creative work prerequisite, all belong to the scope of the utility model protection.
As Fig. 1-Fig. 2, the utility model embodiment provides a kind of encapsulating structure of photoelectron integrated chip, comprises Can 1, integrated chip 3, radio frequency transition block 5, direct current transition block 4 and chip transition block 2.Described integrated chip 3, described radio frequency transition block 5, described direct current transition block 4 and described chip transition block 2 are all installed in described Can 1, and described Can 1 sealing arranges.Described integrated chip 3 is attached at the golden tin solder region in described chip transition block 2, that is to say, in described chip transition block 2, sputter has golden tin solder, thereby is convenient to the laminating of described integrated chip 3 and chip transition block 2, also can improve the heat radiation of integrated chip 3 simultaneously.In described chip transition block 2, be also provided with thermistor, for the working temperature of monitoring laser.
As Fig. 1-Fig. 2, described radio frequency transition block 5 and described direct current transition block 4 are all electrically connected described integrated chip 3, described radio frequency transition block 5 provides bias voltage and high-frequency modulation signal for described integrated chip 3, described direct current transition block 4 provides electric current for the heating electrode of giving integrated chip 3, can also regulate the wavelength of laser.Described direct current transition block 4 be located at described radio frequency transition block 5 directly over, between described direct current transition block 4 and described radio frequency transition block 5, be provided with cushion block 9, described cushion block 9 is elongated, described cushion block 9 is for connecting described direct current transition block 4 and described radio frequency transition block 5, in this preferred embodiment, the quantity of described cushion block 9 is two, is located at respectively both sides.Described radio frequency transition block 5 and described direct current transition block 4 adopt levels setting, and the middle cushion block 9 that uses connects, and therefore, with respect to the encapsulating structure of design planar, the encapsulating structure of described high photoelectron integrated chip 3 can effectively reduce encapsulated space.
As Fig. 1-Fig. 2, for reducing between unlike material therefore to expand with heat and contract with cold or the inhomogeneous matching problem causing of Stress Release due to high temperature sintering or welding, described radio frequency transition block 5, described cushion block 9, described direct current transition block 4 all adopt aluminium nitride material, described direct current transition block 4 is all gold-plated with the relative two sides of described radio frequency transition block 5, that is to say and adopts two-sided craft of gilding moulding; And described radio frequency transition block 5 is provided with multiple via holes 51, to guarantee good connection the between itself and the earth.In this preferred embodiment, between described integrated chip 3 and radio frequency transition block 5, the corresponding pin of Can 1, adopt the mode of gold wire bonding to connect, in order to reduce the impact of spun gold parasitic capacitance on high-frequency signal, between integrated chip 3 and radio frequency transition block 5, adopt wedge bonding technique.And between the heating electrode of integrated chip 3 and direct current transition block 4 owing to not considering the problem of parasitic capacitance, can adopt ball bonding technique to increase the fastness of spun gold cascade.
As Fig. 1-Fig. 2, also comprise a tungsten copper heat-sink (not label), described tungsten copper heat-sink is located in described Can 1, described tungsten copper heat-sink top is provided with collimating lens 6 and condenser lens 7, in this preferred embodiment, described collimating lens 6 and the equal scioptics support of described condenser lens 7 are fixed on tungsten copper heat-sink.Described collimating lens 6 is for compressing integrated chip 3 angles of divergence, shaping hot spot, and described condenser lens 7 is for converging collimated light.Between described collimating lens 6 and described condenser lens 7, be provided with isolator, described isolator is for realizing the one-way of light transmission.Also comprise optical fiber component 8, described optical fiber component 8 is fixed on described tungsten copper heat-sink by structure of fiber_optic, and described optical fiber component 8 is located along the same line with described collimating lens 6, described condenser lens 7, so that light path can be passed through.What light path part adopted is two-lens structure (collimating lens 6 and condenser lens 7), the light sending from integrated chip 3 closes ripple to fixing passage by AWG, by collimating lens 6, AWG light is out carried out to angle of divergence compression and shaping, this collimated light beam enters condenser lens 7 after by isolator and converges, and converges light and is received by monomode fiber.
As Fig. 1-Fig. 2, described tungsten copper heat-sink below is provided with semiconductor cooler (not shown), and described semiconductor cooler is positioned at described Can 1, and described semiconductor cooler can effectively be controlled the working temperature of laser.In this preferred embodiment, semiconductor cooler is to adopt Peltier principle to make, and what contact with Can 1 is the hot side of semiconductor cooler, and what contact with tungsten copper heat-sink is the huyashi-chuuka (cold chinese-style noodles) of semiconductor cooler.In the time that the working temperature of integrated chip 3 exceedes settings, power up stream to semiconductor cooler forward and carry out refrigeration radiating, in the time that the working temperature of integrated chip 3 does not reach settings, oppositely power up the heating that heats up to semiconductor cooler, can realize its control to temperature.
In sum, described radio frequency transition block and described direct current transition block adopt levels setting, and the connection of middle use cushion block, therefore with respect to the encapsulating structure planar designing, the encapsulating structure of described photoelectron integrated chip can effectively reduce encapsulated space, makes the miniaturization of products; The encapsulating structure of described photoelectron integrated chip has adopted semiconductor cooler, can effectively control the working temperature of laser; The encapsulating structure of described photoelectron integrated chip for gloss two-lens structure (collimating lens and condenser lens) replace traditional einzel lens or optical fibre microlens mode, can effectively improve coupling efficiency.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection range of the present utility model.
Claims (6)
1. an encapsulating structure for photoelectron integrated chip, is characterized in that, comprises Can, integrated chip, radio frequency transition block, direct current transition block and chip transition block;
Described integrated chip, described radio frequency transition block, described direct current transition block and described chip transition block are all installed in described Can, and described integrated chip is attached at the golden tin solder region in described chip transition block,
Described radio frequency transition block and described direct current transition block are all electrically connected described integrated chip, and described direct current transition block be located at described radio frequency transition block directly over, between described direct current transition block and described radio frequency transition block, be provided with cushion block.
2. the encapsulating structure of photoelectron integrated chip as claimed in claim 1, is characterized in that: described direct current transition block is all gold-plated with the relative two sides of described radio frequency transition block.
3. the encapsulating structure of photoelectron integrated chip as claimed in claim 1, is characterized in that: described radio frequency transition block is provided with multiple via holes.
4. the encapsulating structure of photoelectron integrated chip as claimed in claim 1, it is characterized in that: the encapsulating structure of described photoelectron integrated chip also comprises a tungsten copper heat-sink, described tungsten copper heat-sink is located in described Can, described tungsten copper heat-sink top is provided with collimating lens and condenser lens, between described collimating lens and described condenser lens, is provided with isolator.
5. the encapsulating structure of photoelectron integrated chip as claimed in claim 4, is characterized in that: also comprise optical fiber component, described optical fiber component and described collimating lens, described condenser lens are located along the same line, and are fixed on described tungsten copper heat-sink.
6. the encapsulating structure of photoelectron integrated chip as claimed in claim 4, is characterized in that: described tungsten copper heat-sink below is provided with semiconductor cooler, and described semiconductor cooler is positioned at described Can.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420040487.1U CN203707560U (en) | 2014-01-23 | 2014-01-23 | Packaging structure of photoelectronic integrated chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420040487.1U CN203707560U (en) | 2014-01-23 | 2014-01-23 | Packaging structure of photoelectronic integrated chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203707560U true CN203707560U (en) | 2014-07-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420040487.1U Expired - Lifetime CN203707560U (en) | 2014-01-23 | 2014-01-23 | Packaging structure of photoelectronic integrated chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203707560U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105549163A (en) * | 2016-02-02 | 2016-05-04 | 武汉电信器件有限公司 | Optical interconnection assembly |
| CN106300004A (en) * | 2016-11-07 | 2017-01-04 | 中国电子科技集团公司第四十四研究所 | Semiconductor laser multichannel integrated encapsulation structure |
| CN107634044A (en) * | 2017-09-15 | 2018-01-26 | 成都睿腾万通科技有限公司 | A kind of high-power SIP gold tin welding encapsulating structure and method for packing |
-
2014
- 2014-01-23 CN CN201420040487.1U patent/CN203707560U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105549163A (en) * | 2016-02-02 | 2016-05-04 | 武汉电信器件有限公司 | Optical interconnection assembly |
| CN106300004A (en) * | 2016-11-07 | 2017-01-04 | 中国电子科技集团公司第四十四研究所 | Semiconductor laser multichannel integrated encapsulation structure |
| CN106300004B (en) * | 2016-11-07 | 2019-02-01 | 中国电子科技集团公司第四十四研究所 | Semiconductor laser multichannel integrated encapsulation structure |
| CN107634044A (en) * | 2017-09-15 | 2018-01-26 | 成都睿腾万通科技有限公司 | A kind of high-power SIP gold tin welding encapsulating structure and method for packing |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140709 |