CN101202418A - Heat sink for encapsulation of electroabsorption modulation laser - Google Patents
Heat sink for encapsulation of electroabsorption modulation laser Download PDFInfo
- Publication number
- CN101202418A CN101202418A CNA2006101651081A CN200610165108A CN101202418A CN 101202418 A CN101202418 A CN 101202418A CN A2006101651081 A CNA2006101651081 A CN A2006101651081A CN 200610165108 A CN200610165108 A CN 200610165108A CN 101202418 A CN101202418 A CN 101202418A
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- heat sink
- signal electrode
- electrode
- modulated laser
- electroabsorption modulated
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Abstract
The invention provides a heat sink which is used for encapsulating electrical absorbing modulation laser, comprising a heat sink, a first signal electrode which is plated at one side of the heat sink in evaporation and used for providing bias current which is required by a DFB laser when the electrical absorbing modulation laser is in use, a second signal electrode which is plated at the upper end of the other side of the heat sink in evaporation and used for providing reverse bias voltage and high-frequency modulation signals which are required by an EA modulator when the electrical absorbing modulation laser is in use, a film resistance which is arranged on the heat sink, arranged at one side of the second signal electrode and connected with the second signal electrode, a grounding electrode which is plated on the surface of the heat sink in evaporation and shaped like an inverted T structure and is connected with the film resistance, and a bypass capacitor which is arranged on the grounding electrode and close to the first signal electrode. The bypass capacitor conducts the coupling electric signals between the DFB laser and the EA modulator to the ground.
Description
Technical field
The invention belongs to the semiconductor photoelectronic device field, a kind of the heat sink of Electroabsorption Modulated Laser encapsulation usefulness that be used for of more specifically saying so.
Background technology
The monolithic integrated device of distributed feed-back (DFB) laser and electric absorption (EA) modulator, promptly Electroabsorption Modulated Laser plays an important role in long distance High-speed fiber optic transmission system as a kind of reliable light source.Interaction between photon and the electronics in laser when integrated optical source uses the external modulation technology to avoid High Speed Modulation, reduced that direct modulation causes than high-chip, and it is little that integrated optical source also has a volume, coupling efficiency height, low advantage such as warble.Integrated device encapsulation usefulness heat sink can not use heat sink that general discrete device uses, this be because:
1, the required signal of telecommunication of Distributed Feedback Laser in the integrated device and the work of EA modulator will load simultaneously, and this needs three heat sink electrodes at least, must redesign the position of heat sink top electrode;
2, DFB and EA exist the coupling of signal each other in the integrated device, can be from the high-frequency signal that EA modulator top pad loads by the top pad that is capacitively coupled to laser between pad, laser is directly modulated, and the electric port at modulator after the emergent light of ovennodulation is injected into modulator and is absorbed also can cause additional modulation.
This photoelectricity coupling meeting reduces the responsive bandwidth of integrated optical source, and the high frequency characteristics of device is produced a very large impact.The heat sink of encapsulation use must eliminate this factor.
Summary of the invention
In order to overcome the above problems, the present invention proposes a kind of the heat sink of Electroabsorption Modulated Laser encapsulation usefulness that be used for, use structural design of the present invention and can finish the high-frequency test of integrated chip well, avoid the aforementioned coupling of mentioning simultaneously, thereby greatly improved the high frequency response of integrated optical source.
The technical scheme that the present invention solves its technical problem is:
A kind of the heat sink of Electroabsorption Modulated Laser encapsulation usefulness that be used for of the present invention is characterized in that, comprising:
One is heat sink;
One first signal electrode, this first signal electrode evaporation be in a heat sink side, the needed bias current of Distributed Feedback Laser when this first signal electrode is used for providing work to Electroabsorption Modulated Laser;
One secondary signal electrode, this secondary signal electrode evaporation be in the upper end of heat sink opposite side, needed reverse bias voltage of EA modulator and high-frequency modulation signal when this secondary signal electrode is used for providing work to Electroabsorption Modulated Laser;
One film resistor, this film resistor be produced on heat sink on, be positioned at a side of secondary signal electrode, and be connected with the secondary signal electrode, the effect of this film resistor is the high resistant that reduces EA modulator in the Electroabsorption Modulated Laser in actual test process;
One ground electrode, this ground electrode evaporation are in heat sink surface, and shape is general, and this ground electrode is connected with film resistor like an inverted T shape structure, and this ground electrode is used to provide an electrode that is connected to ground;
One bypass electric capacity, this shunt capacitance is produced on the ground electrode, and near first signal electrode, the effect of this shunt capacitance is that the coupled electrical signal that will exist between Distributed Feedback Laser and the EA modulator imports to ground.
Wherein heat sink material is that the high electricity of aluminium nitride or anaerobic is led copper or diamond or silver or gold or carborundum or beryllium oxide.
Wherein said film resistor is 50 coupling film resistor.
Wherein said shunt capacitance is the shunt capacitance of 3.9pF.
The surface gold-plating of first signal electrode, secondary signal electrode and ground electrode wherein.
The invention has the beneficial effects as follows: on heat sink, made three electrodes, can load the signal of telecommunication simultaneously, finished the high-frequency test of device to Distributed Feedback Laser and EA modulator; Simultaneously on heat sink near the position parallel connection of laser signal electrode a electric capacity to ground electrode, during test, with spun gold signal electrode on heat sink and shunt capacitance are coupled together, like this, the high-frequency signal that is coupled to laser from the EA modulator just has been directed to ground electrode, can not produce additional modulation to laser again, thereby improve the high frequency response characteristic of integrated optical source.
Description of drawings
For further specifying technology contents of the present invention, the invention will be further described below in conjunction with drawings and Examples, wherein:
Fig. 1 is the heat sink structure vertical view that the present invention is used for Electroabsorption Modulated Laser encapsulation usefulness;
Fig. 2 uses one embodiment of the invention, is the heat sink test set-up figure with shunt capacitance structure that is used for Electroabsorption Modulated Laser encapsulation usefulness.
Embodiment
See also shown in Figure 1ly, the present invention is a kind of the heat sink of Electroabsorption Modulated Laser encapsulation usefulness that be used for, comprising:
One heat sink 1; Wherein heat sink 1 material is that the high electricity of aluminium nitride or anaerobic is led copper or diamond or silver or gold or carborundum or beryllium oxide.
One first signal electrode 3, these first signal electrode, 3 evaporations are in a side of heat sink 1; First signal electrode 3 is needed bias currents of Distributed Feedback Laser when providing work to Electroabsorption Modulated Laser, in three port tests, also can directly provide needed high-frequency modulation signal for laser, in the reality test, the top pad that first signal electrode 3 will be used the Distributed Feedback Laser of spun gold and Electroabsorption Modulated Laser is connected.
One secondary signal electrode 4, these secondary signal electrode 4 evaporations are in the upper end of heat sink 1 opposite side; Secondary signal electrode 4 is the needed reverse bias voltage of EA modulator and high-frequency modulation signals when providing work to Electroabsorption Modulated Laser, in the reality test, the top pad that secondary signal electrode 4 will be used the EA modulator of spun gold and Electroabsorption Modulated Laser is connected.And because to be placed in the EA modulator and the Distributed Feedback Laser of the Electroabsorption Modulated Laser on heat sink in the actual test be tactic, so will stagger on the light direction of Electroabsorption Modulated Laser in the position of first signal electrode 3 and secondary signal electrode 4, like this in the reality test, the spun gold that first signal electrode 3 and secondary signal electrode 4 is connected respectively to Distributed Feedback Laser and EA modulator electrode just can be very short, thereby avoided the adverse effect that caused by spun gold to a great extent.
The surface gold-plating of first signal electrode 3, secondary signal electrode 4 and ground electrode 2 wherein.
One film resistor 5, this film resistor 5 is produced on heat sink 1, is positioned at a side of secondary signal electrode 4, and is connected with secondary signal electrode 4; The coupling film resistor 5 that wherein said film resistor 5 is 50 Ω.Film resistor 5 is to be connected in parallel on a heat sink end of going up the EA modulator of Electroabsorption Modulated Laser, and effect is the high resistant that reduces EA modulator in the Electroabsorption Modulated Laser in actual test process, is convenient to Electroabsorption Modulated Laser is carried out the test of high frequency characteristics.
One ground electrode 2, these ground electrode 2 evaporations are on heat sink 1 surface, and shape is general like an inverted T shape structure, and this ground electrode 2 is connected with film resistor 5; The effect of ground electrode 2 provides a ground electrode, and in the process that Electroabsorption Modulated Laser is tested, ground electrode 2 will couple together with ground, brings into play its function as ground electrode.
One bypass electric capacity 6, this shunt capacitance 6 is produced on the ground electrode 2, near first signal electrode 3.The shunt capacitance 6 that wherein said shunt capacitance 6 is 3.9pF.Shunt capacitance 6 is to be connected in parallel on a heat sink end of going up the Distributed Feedback Laser of Electroabsorption Modulated Laser, and the effect of shunt capacitance 6 is that the coupling of signal that Distributed Feedback Laser and EA modulator are existed each other imports to ground.Can be from the high-frequency signal that EA modulator top pad loads by the top pad that is capacitively coupled to laser between pad, the signal that shunt capacitance 6 can be come coupling directly imports to ground, thereby avoided additional modulation, obtained better modulation bandwidth the Distributed Feedback Laser of Electroabsorption Modulated Laser.
Embodiment
See also shown in Figure 2, Fig. 2 uses one embodiment of the invention, be the heat sink test set-up figure that is used for Electroabsorption Modulated Laser encapsulation usefulness,, also comprise except being used for the having shunt capacitance structure heat sink of Electroabsorption Modulated Laser encapsulation usefulness with shunt capacitance structure:
One Electroabsorption Modulated Laser 7 to be measured; Electroabsorption Modulated Laser 7 wherein to be measured is placed in the general seemingly T placement of foot of the ground electrode 2 of an inverted T shape structure of shape, and the light-emitting window of while Electroabsorption Modulated Laser 7 to be measured is the edge of electrode 2 closely.
Two pads 8,9; Wherein pad 8,9 is respectively the Distributed Feedback Laser of Electroabsorption Modulated Laser 7 to be measured and the top pad of EA modulator.
Three spun golds 10,11,12; Wherein spun gold 10 connects the top pad 9 and the secondary signal electrode 4 of the EA modulator of Electroabsorption Modulated Laser 7 to be measured; Spun gold 11 connects the top pad 8 and first signal electrode 3 of the Distributed Feedback Laser of Electroabsorption Modulated Laser 7 to be measured; Spun gold 12 connects first signal electrode 3 and shunt capacitance 6.
In the actual test process, use the coplane microwave electrodes respectively the signal of telecommunication to be carried on first signal electrode 3 and the secondary signal electrode 4, the Distributed Feedback Laser of Electroabsorption Modulated Laser 7 to be measured is swashed by forward bias and penetrates light and the EA modulator is reverse biased.The high-frequency signal of EA modulator top pad 9 that is loaded into Electroabsorption Modulated Laser 7 to be measured is by the top pad 8 that is capacitively coupled to Distributed Feedback Laser between the pad 8,9, subsequently, high-frequency signal is directed to ground electrode 2 by spun gold 11,12 and shunt capacitance 6, avoided caused bigger the warbling of additional directly modulation, improved the responsive bandwidth of Electroabsorption Modulated Laser to be measured greatly the Distributed Feedback Laser of Electroabsorption Modulated Laser to be measured.
Claims (5)
1. one kind is used for the heat sink of Electroabsorption Modulated Laser encapsulation usefulness, it is characterized in that, comprising:
One is heat sink;
One first signal electrode, this first signal electrode evaporation be in a heat sink side, the needed bias current of Distributed Feedback Laser when this first signal electrode is used for providing work to Electroabsorption Modulated Laser;
One secondary signal electrode, this secondary signal electrode evaporation be in the upper end of heat sink opposite side, needed reverse bias voltage of EA modulator and high-frequency modulation signal when this secondary signal electrode is used for providing work to Electroabsorption Modulated Laser;
One film resistor, this film resistor be produced on heat sink on, be positioned at a side of secondary signal electrode, and be connected with the secondary signal electrode, the effect of this film resistor is the high resistant that reduces EA modulator in the Electroabsorption Modulated Laser in actual test process;
One ground electrode, this ground electrode evaporation are in heat sink surface, and shape is general, and this ground electrode is connected with film resistor like an inverted T shape structure, and this ground electrode is used to provide an electrode that is connected to ground;
One bypass electric capacity, this shunt capacitance is produced on the ground electrode, and near first signal electrode, the effect of this shunt capacitance is that the coupled electrical signal that will exist between Distributed Feedback Laser and the EA modulator imports to ground.
2. the heat sink of Electroabsorption Modulated Laser encapsulation usefulness that be used for as claimed in claim 1 is characterized in that wherein heat sink material is that the high electricity of aluminium nitride or anaerobic is led copper or diamond or silver or gold or carborundum or beryllium oxide.
3. the heat sink of Electroabsorption Modulated Laser encapsulation usefulness that be used for as claimed in claim 1 is characterized in that wherein said film resistor is the coupling film resistor of 50 Ω.
4. the heat sink of Electroabsorption Modulated Laser encapsulation usefulness that be used for as claimed in claim 1 is characterized in that wherein said shunt capacitance is the shunt capacitance of 3.9pF.
5. the heat sink of Electroabsorption Modulated Laser encapsulation usefulness that be used for as claimed in claim 1 is characterized in that, wherein the surface gold-plating of first signal electrode, secondary signal electrode and ground electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101651081A CN100490263C (en) | 2006-12-13 | 2006-12-13 | Heat sink for encapsulation of electroabsorption modulation laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101651081A CN100490263C (en) | 2006-12-13 | 2006-12-13 | Heat sink for encapsulation of electroabsorption modulation laser |
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| Publication Number | Publication Date |
|---|---|
| CN101202418A true CN101202418A (en) | 2008-06-18 |
| CN100490263C CN100490263C (en) | 2009-05-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006101651081A Expired - Fee Related CN100490263C (en) | 2006-12-13 | 2006-12-13 | Heat sink for encapsulation of electroabsorption modulation laser |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324964A (en) * | 2011-05-18 | 2012-01-18 | 武汉电信器件有限公司 | Light transmitter with double-open-circuit short-knot matching network |
| CN103887704A (en) * | 2014-03-27 | 2014-06-25 | 北京牡丹电子集团有限责任公司 | Heat sink used for downward encapsulation of p side of semiconductor laser unit and manufacturing method thereof |
| CN106549299A (en) * | 2016-10-24 | 2017-03-29 | 中国科学院半导体研究所 | A kind of subcarrier encapsulating structure for directly modulation chip of laser |
| CN107453818A (en) * | 2017-08-14 | 2017-12-08 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module and optical communication system |
| CN108808440A (en) * | 2018-06-11 | 2018-11-13 | 湖北航星光电科技股份有限公司 | A kind of structure and preparation method that EML devices encapsulation chip is electrically interconnected with substrate |
| CN113078550A (en) * | 2021-04-27 | 2021-07-06 | 广东瑞谷光网通信股份有限公司 | Packaging device of electroabsorption modulation laser |
| WO2021196040A1 (en) * | 2020-03-31 | 2021-10-07 | 华为技术有限公司 | Electro-absorption modulated laser and optical module |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179273A (en) * | 2002-11-26 | 2004-06-24 | Nec Corp | Semiconductor laser chip component and semiconductor laser module using the same |
| CN1275368C (en) * | 2003-11-14 | 2006-09-13 | 中国科学院半导体研究所 | Semiconductor laser heat sink |
-
2006
- 2006-12-13 CN CNB2006101651081A patent/CN100490263C/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102324964A (en) * | 2011-05-18 | 2012-01-18 | 武汉电信器件有限公司 | Light transmitter with double-open-circuit short-knot matching network |
| CN103887704A (en) * | 2014-03-27 | 2014-06-25 | 北京牡丹电子集团有限责任公司 | Heat sink used for downward encapsulation of p side of semiconductor laser unit and manufacturing method thereof |
| CN103887704B (en) * | 2014-03-27 | 2016-06-01 | 北京牡丹电子集团有限责任公司 | A kind of for semiconductor laser p towards the heat sink of lower encapsulation and making method thereof |
| CN106549299A (en) * | 2016-10-24 | 2017-03-29 | 中国科学院半导体研究所 | A kind of subcarrier encapsulating structure for directly modulation chip of laser |
| CN106549299B (en) * | 2016-10-24 | 2019-03-01 | 中国科学院半导体研究所 | It is a kind of for directly modulating the subcarrier encapsulating structure of chip of laser |
| CN107453818A (en) * | 2017-08-14 | 2017-12-08 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module and optical communication system |
| CN108808440A (en) * | 2018-06-11 | 2018-11-13 | 湖北航星光电科技股份有限公司 | A kind of structure and preparation method that EML devices encapsulation chip is electrically interconnected with substrate |
| WO2021196040A1 (en) * | 2020-03-31 | 2021-10-07 | 华为技术有限公司 | Electro-absorption modulated laser and optical module |
| CN114946091A (en) * | 2020-03-31 | 2022-08-26 | 华为技术有限公司 | Electro-absorption modulation laser and optical module |
| CN113078550A (en) * | 2021-04-27 | 2021-07-06 | 广东瑞谷光网通信股份有限公司 | Packaging device of electroabsorption modulation laser |
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| Publication number | Publication date |
|---|---|
| CN100490263C (en) | 2009-05-20 |
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Granted publication date: 20090520 Termination date: 20100113 |