CN1275368C - Semiconductor laser heat sink - Google Patents
Semiconductor laser heat sink Download PDFInfo
- Publication number
- CN1275368C CN1275368C CN 200310116537 CN200310116537A CN1275368C CN 1275368 C CN1275368 C CN 1275368C CN 200310116537 CN200310116537 CN 200310116537 CN 200310116537 A CN200310116537 A CN 200310116537A CN 1275368 C CN1275368 C CN 1275368C
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- heat sink
- electrode
- semiconductor laser
- metal electrode
- ground electrode
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- Expired - Fee Related
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
The present invention relates to a semiconductor laser heat sink which comprises: a heat sink, a metal electrode, a signal electrode, a ground electrode, a through hole and a column of gold tin welding flux, wherein the metal electrode and the signal electrode are positioned on the upper surface of the heat sink; the ground electrode is positioned on the lower surface of the heat sink; the through hole is positioned in one metal electrode area in the present invention on the upper surface of the heat sink, and penetrates the metal electrode, the entire heat sink and the ground electrode; the column of gold tin welding flux is positioned in the through hole.
Description
Technical field
The invention belongs to field of optoelectronic devices, a kind of semiconductor laser thermal sediment of more specifically saying so.
Background technology
In the present widely used semiconductor laser of optical fiber communication, laser tube core is as core component, and its performance parameter has directly determined the characteristic of entire device or module.But common some other element or parts that in test and encapsulation process, need, for semiconductor laser particularly the characteristic of high-speed laser have parasitic effects.For example heat sink direct carrier as laser tube core mainly solves the heat radiation of tube core and the connectivity problem of electrode, and general tube core has P, N two coplanar electrodes not up and down, heat sink on also to two electrodes should be arranged.Normally the bottom electrode of tube core is welded on the heat sink electrode, the top electrode of tube core then is connected on another heat sink electrode by a spun gold, with spun gold heat sink electrode is connected with external circuit respectively then.Normally used spun gold is because be subjected to the restriction of laser tube core electrode size, and general diameter is less, and (φ＜25um), inductive effect is apparent in view, approximately 1nh/mm.If spun gold is many more like this, the parasitic parameter of introducing is big more, can obviously influence modulating characteristic, and especially when frequency modulating signal is high more, this to influence meeting bigger, limited the raising of device overall performance.
Summary of the invention
In order to overcome the above problems, the object of the present invention is to provide a kind of semiconductor laser thermal sediment, this is heat sink can to reduce spun gold quantity, reduce the parasitic parameter influence that spun gold is introduced.
The technical scheme that the present invention solves its technical problem is:
A kind of semiconductor laser thermal sediment of the present invention is characterized in that, comprising:
One is heat sink;
One metal electrode and a signal electrode are positioned at heat sink upper surface;
One ground electrode is positioned at heat sink lower surface;
One via is positioned at the zone of the metal electrode of heat sink upper surface, and runs through metal electrode, whole heat sink and ground electrode;
One gold medal soldering stock column is positioned at via, and fills up via.
It is wherein heat sink that what adopt is diamond or aluminium nitride or beryllium oxide or carbofrax material.
Wherein handle through craft of gilding on the surface of metal electrode, signal electrode and ground electrode.
Wherein the diameter of via is greater than 300 μ m.
Wherein golden soldering stock column is communicated with metal electrode and ground electrode.
The invention has the beneficial effects as follows: can avoid the spun gold that is connected between heat sink upper surface electrode and the ground electrode, replace with the via of filling in scolder, inductive effect is littler than spun gold, reaches the purpose that reduces spun gold quantity, reduces the parasitic parameter influence of spun gold introducing.
Description of drawings
For further specifying technology contents of the present invention, the invention will be further described below in conjunction with drawings and Examples, wherein:
Fig. 1 is the profile of a kind of semiconductor laser thermal sediment of the present invention.
Fig. 2 is the vertical view of Fig. 1.
Embodiment
See also Fig. 1 and Fig. 2, in the embodiment of Fig. 1 and Fig. 2, a kind of semiconductor laser thermal sediment of the present invention, comprising:
One is heat sink 1, and this is heat sink, and 1 what adopted is diamond or aluminium nitride or oxidation plating or carbofrax material;
One metal electrode 2 and a signal electrode 6, this metal electrode 2 and a signal electrode 6 are located at heat sink 1 upper surface;
One ground electrode 4, this ground electrode 4 is located at heat sink 1 lower surface;
Handle through craft of gilding on the surface of above-mentioned metal electrode 2, signal electrode 6 and ground electrode 4;
One via 3, this via 3 is located in the zone of one of them metal electrode 2 of upper surface of heat sink 1, and run through metal electrode 2, whole heat sink 1 and ground electrode 4, and the diameter of this via 3 is greater than 300 μ m, and this via 3 is to adopt the technology of laser drilling to be formed on heat sink 1;
One gold medal soldering stock column 5 is positioned at via 3;
Wherein golden soldering stock column 5 is communicated with metal electrode 2 and ground electrode 4 get up.
In this process, because the via 3 of laser drilling has certain taper, metallization is convenient in via 3 inboards when sputter or evaporation, realizes being connected of heat sink upper surface electrode 2 and ground electrode 4.In via 3, fill in golden tin solder 5 then and form the bigger solder post of diameter, can improve the reliability of connection, reduce parasitic effects.
Claims (5)
1, a kind of semiconductor laser thermal sediment is characterized in that, comprising:
One is heat sink;
One metal electrode and a signal electrode are positioned at heat sink upper surface;
One ground electrode is positioned at heat sink lower surface;
One via is positioned at the zone of the metal electrode of heat sink upper surface, and runs through metal electrode, whole heat sink and ground electrode;
One gold medal soldering stock column is positioned at via, and fills up via.
2, a kind of semiconductor laser thermal sediment as claimed in claim 1 is characterized in that, wherein heat sink what adopt is diamond or aluminium nitride or beryllium oxide or carbofrax material.
3, a kind of semiconductor laser thermal sediment as claimed in claim 1 is characterized in that, wherein handle through craft of gilding on the surface of metal electrode, signal electrode and ground electrode.
4, a kind of semiconductor laser thermal sediment as claimed in claim 1 is characterized in that, wherein the diameter of via is greater than 300 μ m.
5, a kind of semiconductor laser thermal sediment as claimed in claim 1 is characterized in that, wherein golden soldering stock column is communicated with metal electrode and ground electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310116537 CN1275368C (en) | 2003-11-14 | 2003-11-14 | Semiconductor laser heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310116537 CN1275368C (en) | 2003-11-14 | 2003-11-14 | Semiconductor laser heat sink |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1617401A CN1617401A (en) | 2005-05-18 |
| CN1275368C true CN1275368C (en) | 2006-09-13 |
Family
ID=34760671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200310116537 Expired - Fee Related CN1275368C (en) | 2003-11-14 | 2003-11-14 | Semiconductor laser heat sink |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1275368C (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100490263C (en) * | 2006-12-13 | 2009-05-20 | 中国科学院半导体研究所 | Heat sink for encapsulation of electroabsorption modulation laser |
| CN105720477B (en) * | 2016-02-29 | 2018-08-10 | 中国科学院半导体研究所 | Encapsulating structure applied to antarafacial electrode laser device chip |
| CN106340809A (en) * | 2016-10-26 | 2017-01-18 | 中国科学院半导体研究所 | Edge-emitting semiconductor laser of coplanar electrodes |
| CN111106524A (en) * | 2018-10-29 | 2020-05-05 | 深圳市中光工业技术研究院 | Semiconductor laser |
| CN111029896B (en) * | 2019-12-23 | 2021-02-05 | 常州纵慧芯光半导体科技有限公司 | Encapsulation structure of TOF module of EEL laser and manufacturing method thereof |
-
2003
- 2003-11-14 CN CN 200310116537 patent/CN1275368C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1617401A (en) | 2005-05-18 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |