CN113078550A - Packaging device of electroabsorption modulation laser - Google Patents

Packaging device of electroabsorption modulation laser Download PDF

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Publication number
CN113078550A
CN113078550A CN202110461589.5A CN202110461589A CN113078550A CN 113078550 A CN113078550 A CN 113078550A CN 202110461589 A CN202110461589 A CN 202110461589A CN 113078550 A CN113078550 A CN 113078550A
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CN
China
Prior art keywords
optical
electroabsorption
heat sink
lens
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110461589.5A
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Chinese (zh)
Inventor
丁植
肖磊
肖凌宇
阳曦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Ruigu Optical Network Communication Co ltd
Original Assignee
Guangdong Ruigu Optical Network Communication Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Ruigu Optical Network Communication Co ltd filed Critical Guangdong Ruigu Optical Network Communication Co ltd
Priority to CN202110461589.5A priority Critical patent/CN113078550A/en
Publication of CN113078550A publication Critical patent/CN113078550A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/39—Non-linear optics for parametric generation or amplification of light, infrared or ultraviolet waves
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/32—Optical coupling means having lens focusing means positioned between opposed fibre ends
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H01S3/0085—Modulating the output, i.e. the laser beam is modulated outside the laser cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media

Abstract

The invention relates to the technical field of optical fiber communication, in particular to a packaging device of an electro-absorption modulated laser. The packaging device of the electro-absorption modulated laser comprises a tube shell, an electro-absorption modulated laser chip arranged in the tube shell, a lens and a heat sink; the electric absorption modulation laser chip comprises an electric absorption modulation laser and an optical amplifier, wherein the electric absorption modulation laser outputs an optical signal to the optical amplifier, and the optical amplifier is used for amplifying the optical signal; the heat sink is provided with a groove, the lens is clamped in the groove, the optical axis of the electroabsorption modulation laser chip is respectively superposed with the central axis of the tube shell and the central axis of the lens, and the amplified optical signal is converged by the lens. The optical amplifier amplifies the optical signal output by the electric absorption modulation laser, and effectively improves the optical power, thereby improving the overall transmission performance of the optical fiber transmission system.

Description

Packaging device of electroabsorption modulation laser
Technical Field
The invention relates to the technical field of optical fiber communication, in particular to a packaging device of an electro-absorption modulated laser.
Background
The electro-absorption modulated laser plays an important role as a reliable light source in a long-distance high-speed optical fiber transmission system. With the development of the optical communication industry, the demand for longer transmission distance lasers continues to increase at higher rates.
The transmission distance of the existing optical fiber transmission system is small, and the actual use requirement cannot be met. Taking a 2.5Gb/s optical fiber transmission system as an example, the allowable loss between receiving and transmitting is generally about 26dB, and the optical connector attenuation, the optical cable margin, and the optical channel cost are deducted, so the distance that the optical fiber transmission system can transmit is about 80 km. However, for the optical fiber transmission system using Wavelength Division Multiplexing (WDM), the loss of the demultiplexer is also considered, and the transmission distance is only about 20-30 km.
In view of the above, there is a need for a new package for an electro-absorption modulated laser that solves the problem of ultra-long distance transmission in an optical fiber transmission system.
Disclosure of Invention
To solve the above technical problem, the present application provides an electro-absorption modulated laser packaging apparatus, which increases the optical signal transmission distance.
A packaging device of an electro-absorption modulated laser comprises a tube shell, an electro-absorption modulated laser chip, a lens and a heat sink, wherein the electro-absorption modulated laser chip, the lens and the heat sink are respectively arranged in the tube shell;
the electric absorption modulation laser chip comprises an electric absorption modulation laser and an optical amplifier, wherein the electric absorption modulation laser outputs an optical signal to the optical amplifier, and the optical amplifier is used for amplifying the optical signal;
the heat sink is provided with a groove, the lens is clamped in the groove, the optical axis of the electroabsorption modulation laser chip is respectively superposed with the central axis of the tube shell and the central axis of the lens, and the amplified optical signal is converged by the lens.
Preferably, the electroabsorption modulated laser comprises an electroabsorption modulator and a semiconductor laser diode, the electroabsorption modulator being disposed between the semiconductor laser diode and the optical amplifier;
the semiconductor laser diode is used for stimulated emission of optical signals, and the electric absorption modulator is used for signal modulation of the optical signals.
Preferably, the two side slopes of the groove are tangential to the outer ring of the lens.
Preferably, the material of the heat sink is silicon-based.
Preferably, a first filter capacitor and a second filter capacitor are integrated on the heat sink, the first filter capacitor is electrically connected with the optical amplifier, and the second filter capacitor is electrically connected with the semiconductor laser diode;
the first filter capacitor and the second filter capacitor are used for reducing the electric crosstalk of the external world to the electric absorption modulator.
Preferably, a bypass capacitor is further integrated on the heat sink for directing signal coupling between the electroabsorption modulator and the semiconductor laser diode to ground.
Preferably, the heat sink further comprises a tungsten copper block and a semiconductor refrigerator, the tungsten copper block is attached to the side face, perpendicular to the optical axis, of the heat sink, and the semiconductor refrigerator is attached to the side face, far away from the heat sink, of the tungsten copper block.
Preferably, the heat sink and the tungsten copper block are connected by silver paste.
Preferably, a backlight detector is further arranged on the heat sink, and the backlight detector is arranged in the backlight direction of the electroabsorption modulation laser.
Preferably, the optical isolator is arranged in a shell of the adapter, and the connecting ring is used for connecting the adapter and the shell.
Compared with the prior art, the invention has the following beneficial effects:
the packaging device of the electric absorption modulation laser comprises an electric absorption modulation laser chip, wherein the electric absorption modulation laser chip comprises an electric absorption modulation laser and an optical amplifier, an optical signal emitted by stimulated radiation of the electric absorption modulation laser can be directly subjected to optical amplification through the optical amplifier, and a lens is used for converging the optical signal amplified by the optical amplifier and outputting the converged optical signal to an optical fiber, so that the coupling efficiency of the optical signal is improved. The electro-absorption modulation laser chip is additionally provided with the optical amplifier, the optical amplifier has the advantages of high gain, wide bandwidth, low noise coefficient and the like, the optical amplifier is integrated with the electro-absorption modulation laser, the electro-absorption modulation laser chip is stable in performance, the optical power can be effectively improved, the transmission distance of the optical fiber is increased, and therefore the overall transmission performance of the optical fiber transmission system is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a package device of an electro-absorption modulated laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an internal structure of a package device of an electro-absorption modulated laser according to an embodiment of the present invention.
Illustration of the drawings: the device comprises an electro-absorption modulated laser chip 1, a bypass capacitor 2, a backlight detector 3, a filter capacitor 4, a thermistor 5, a filter capacitor 6, a lens 7, a film resistor 8, a tungsten copper block 9, a heat sink 10, a semiconductor refrigerator 11, an adapter 12, an optical isolator 13, a connecting ring 14 and a tube shell 15
Detailed Description
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the embodiments described below are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present.
Furthermore, the terms "long", "short", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention, but do not indicate or imply that the referred devices or elements must have the specific orientations, be configured to operate in the specific orientations, and thus are not to be construed as limitations of the present invention.
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
Referring to fig. 1 to 2, a package device of an electro-absorption modulated laser includes a package 15, an electro-absorption modulated laser chip 1, a lens 7 and a heat sink 10, wherein the electro-absorption modulated laser chip 1, the lens 7 and the heat sink 10 are all disposed in the package 15;
the electric absorption modulation laser chip 1 comprises an electric absorption modulation laser and an optical amplifier, wherein the electric absorption modulation laser outputs an optical signal to the optical amplifier, and the optical amplifier is used for amplifying the optical signal;
the heat sink 10 is provided with a groove, the lens 7 is clamped in the groove, the optical axis of the optical signal is respectively superposed with the central axis of the tube shell 15 and the central axis of the lens 7, and the amplified optical signal is converged by the lens 7.
In this embodiment, the optical signal emitted by the stimulated radiation of the light-emitting strip in the electro-absorption modulation laser can be directly optically amplified by the optical amplifier, and the lens 7 is used for converging the optical signal amplified by the optical amplifier and outputting the converged optical signal to the optical fiber, so that the coupling efficiency of the optical signal is improved. The electric absorption modulation laser chip 1 is additionally provided with an optical amplifier, the optical amplifier has the advantages of high gain, wide bandwidth, low noise coefficient and the like, the optical amplifier is integrated with the electric absorption modulation laser, the electric absorption modulation laser chip has stable performance, and the optical power can be effectively improved, so that the overall transmission performance of an optical fiber transmission system is improved.
In addition, the lens 7 is clamped in the groove after the position is found in the groove and is coupled with the optical signal of the electric absorption modulation laser chip 1, so that the requirement on the patch precision of the electric absorption modulation laser chip 1 is lowered, and the coupling mode does not need to design a special clamp and has high universality. The optical axis of the electric absorption modulation laser chip 1 is respectively superposed with the central axis of the tube shell 15 and the central axis of the lens 7, and the coupling difficulty with an external optical device can be reduced in the coupling.
Specifically, the electroabsorption modulated laser comprises an electroabsorption modulator and a semiconductor laser diode, wherein the electroabsorption modulator is arranged between the semiconductor laser diode and an optical amplifier, the semiconductor laser diode is used for exciting and emitting optical signals, the electroabsorption modulator is used for performing signal modulation on the optical signals, and the optical amplifier is used for amplifying the signals modulated by the electroabsorption modulator.
In an alternative embodiment, the material of heatsink 10 is silicon-based. Compared with the ceramic adopted in the prior art, the silicon substrate is easy to cut and process, the silicon substrate is convenient to be provided with the grooves, in addition, the silicon substrate can be directly grown with the filter capacitor and the film resistor, the process is simple, and the cost is low.
A groove is formed in the silicon substrate, the lens 7 is clamped in the groove, and inclined planes on two sides of the groove are tangent to an outer ring of the lens 7. The lens 7 can move horizontally in the groove, and the distance from the electroabsorption modulation laser chip 1 to the front end face of the lens 7 and the distance from the rear end face of the lens 7 to the optical fiber entrance are determined according to the required focal length of the lens 7. The silicon substrate is cut into a groove to fix the lens 7, and an additional clamp is not needed to fix the lens 7, so that the universality is high. In addition, the lens 7 can be adhered to the bottom of the groove by glue, so that the lens 7 can be further fixed. The groove in this embodiment is V-shaped.
In this embodiment, the filter capacitor 4, the filter capacitor 6, the bypass capacitor 2, and the thin film resistor 8 are directly integrated on the silicon substrate, thereby simplifying the manufacturing process.
The filter capacitor is used for filtering harmonic components in the direct current excitation source. The direct current applied to the electro-absorption modulated laser chip 1 has ripple waves, and in order to filter current ripple, a capacitor of 220pf is connected in parallel with an electrode of the electro-absorption modulated laser chip 1, so that the functions of voltage reduction, rectification, filtering and voltage stabilization are achieved, and the overall stability is improved. From the angle of optical path coupling, the filter capacitor reduces the patch precision requirement on the electric absorption modulation laser chip 1 on one hand, and can reduce the coupling difficulty with an external optical device on the other hand.
Specifically, the first filter capacitor 4 is electrically connected with the optical amplifier, the second filter capacitor 6 is electrically connected with the semiconductor laser diode, and the first filter capacitor 4 and the second filter capacitor 6 are used for reducing the electrical crosstalk from the outside to the electro-absorption modulator.
The bypass capacitance 2 serves to conduct the coupling of the signal present between the electroabsorption modulator and the semiconductor laser diode to ground. The additional modulation of the high-frequency signal to the electro-absorption modulator is avoided, and better modulation bandwidth can be obtained.
The thin film resistor 8 is arranged on one side of the electroabsorption modulator, and the thin film resistor 8 can be selected to be 50 ohms. The thin film resistor 8 is used to lower the high resistance of the electroabsorption modulator to facilitate the testing of the high frequency characteristics of the electroabsorption modulated laser.
In an alternative embodiment, the package further includes a semiconductor cooler 11, the semiconductor cooler 11 is used as a cooling heat sink, the semiconductor cooler 11 is disposed on the sidewall of the case 15, and the semiconductor cooler 11 is attached to the side of the heat sink 10 perpendicular to the optical axis.
The silicon substrate is also provided with a thermistor 5, the anode of the thermistor 5 and GND form a circuit which is arranged outside the semiconductor refrigerator, and the thermistor 5 has the function of monitoring the temperature of the electro-absorption modulation laser. The resistance value of the thermistor 5 at normal temperature is about 10k omega, the thermistor 5 is a negative temperature coefficient parameter curve, and the resistance value is reduced along with the temperature rise.
In order to improve the heat dissipation capability of the device, in an alternative embodiment, the packaging device further comprises a tungsten copper block 9, and the tungsten copper block 9 has good heat dissipation characteristics. The tungsten copper block 9 is attached to the side of the heat sink 10 perpendicular to the optical axis, and the semiconductor refrigerator 11 is attached to the side of the tungsten copper block 9 remote from the heat sink 10.
Optionally, the tungsten copper block 9 and the heat sink 10 are connected by using high-conductivity heat-dissipation silver adhesive, so that the heat dissipation capability of the system can be effectively improved. The heat emitted by the electroabsorption modulation laser chip 1 is transferred to the silver colloid through the heat sink 10 and then transferred to the tungsten copper block 9, and the heat on the tungsten copper block 9 is transferred to the semiconductor refrigerator 11, so that the heat dissipation cycle is completed.
In an alternative embodiment, a backlight detector 3 is further disposed on the heat sink 10, and the backlight detector 3 is disposed in the backlight direction of the electroabsorption modulated laser. The light receiving surface of the backlight detector 3 is opposite to the back light emitting surface of the semiconductor laser diode, the backlight detector 3 is used for sensing the power of the laser emitted by the semiconductor laser diode and transmitting the electric signal to the control end, and the control end can control the magnitude of the current applied to the semiconductor laser diode according to the detection result of the backlight detector 3 and maintain the power of the emitted light to be constant. In addition, the control end can judge whether the electric absorption modulation laser chip 1 is in a normal state according to the electric signal transmitted by the backlight detector 3, so that the optical signal transmission effect is ensured.
In this application, the package further includes an adapter 12, an optical isolator 13, and a coupling ring 14, the optical isolator 13 being used to filter other wavelengths. An optical isolator 13 is disposed within the housing of adapter 12, and a coupling ring 14 couples adapter 12 to a housing 15. The adapter 12 is connected with the light inlet of the optical fiber to realize optical path transmission.
In order to be able to position the components accurately on the heat sink 10, in an alternative embodiment, a carrier transition module is provided on the heat sink 10, which carrier transition module comprises a plurality of submodules, the components being attached in the respective submodule regions. In addition, the sub-module can also decompose the impedance inequality existing in the whole link caused by too long gold wires so as to crack the radio frequency performance of the laser.
In summary, the package device of the electro-absorption modulated laser of the present embodiment includes the electro-absorption modulated laser chip 1, the lens 7 and the heat sink 10 which are disposed in the package 54, the electro-absorption modulated laser chip 1 includes an electro-absorption modulated laser and an optical amplifier, and the optical amplifier amplifies the optical signal output by the electro-absorption modulated laser, so as to effectively improve the optical power, and thus improve the overall transmission performance of the optical fiber transmission system. In addition, the packaging device of the electric absorption modulation laser has compact structural layout, the main optical path and the backlight detection optical path are stable, the signal transmission circuit of the electric absorption modulation laser is optimized, and the stability of photoelectric performance is ensured.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (10)

1. The packaging device of the electric absorption modulation laser is characterized by comprising a tube shell (15), an electric absorption modulation laser chip (1), a lens (7) and a heat sink (10), wherein the electric absorption modulation laser chip (1), the lens (7) and the heat sink (10) are respectively arranged in the tube shell (15);
the electroabsorption modulation laser chip (1) comprises an electroabsorption modulation laser and an optical amplifier, wherein an optical signal output by the electroabsorption modulation laser is transmitted to the optical amplifier, and the optical amplifier is used for amplifying the optical signal;
the heat sink (10) is provided with a groove, the lens (7) is clamped in the groove, the optical axis of the electric absorption modulation laser chip (1) is respectively superposed with the central axis of the tube shell (15) and the central axis of the lens (7), and the amplified optical signal is converged through the lens (7).
2. The package of an electroabsorption modulated laser as claimed in claim 1, wherein the electroabsorption modulated laser comprises an electroabsorption modulator and a semiconductor laser diode, the electroabsorption modulator being disposed between the semiconductor laser diode and the optical amplifier;
the semiconductor laser diode is used for stimulated emission of optical signals, and the electric absorption modulator is used for signal modulation of the optical signals.
3. The encapsulation device of an electroabsorption modulated laser as claimed in claim 1, characterized in that the slopes of the two sides of the groove are tangential to the outer ring of the lens (7).
4. The encapsulation of an electroabsorption modulated laser as claimed in claim 2, characterized in that the material of the heat sink (10) is silicon-based.
5. The packaging arrangement of an electroabsorption modulated laser according to claim 4, wherein a first filter capacitor (4) and a second filter capacitor (6) are integrated on the heat sink (10), the first filter capacitor (4) is electrically connected to the optical amplifier, and the second filter capacitor (6) is electrically connected to the semiconductor laser diode;
the first filter capacitor (4) and the second filter capacitor (6) are used for reducing the electric crosstalk of the external world to the electric absorption modulator.
6. The encapsulation arrangement of the electroabsorption modulated laser according to claim 5, characterized in that a bypass capacitor (2) is further integrated on the heat sink (10), the bypass capacitor (2) being used to conduct the signal coupling between the electroabsorption modulator and the semiconductor laser diode to ground.
7. An encapsulation arrangement for an electroabsorption modulated laser according to claim 1, further comprising a tungsten copper block (9) and a semiconductor refrigerator (11), the tungsten copper block (9) being attached on a side of the heat sink (10) perpendicular to the optical axis, the semiconductor refrigerator (11) being attached on a side of the tungsten copper block (9) remote from the heat sink (10).
8. The encapsulation of an electroabsorption modulated laser as claimed in claim 7, characterized in that the heat sink (10) is connected to the tungsten copper block (9) by silver paste.
9. The encapsulation apparatus of the electroabsorption modulated laser according to claim 1, wherein a backlight detector (3) is further disposed on the heat sink (10), and the backlight detector (3) is disposed in a backlight direction of the electroabsorption modulated laser.
10. The package for an electro-absorption modulated laser as claimed in claim 1, further comprising an adapter (12), an optical isolator (13) and a coupling ring (14), the optical isolator (13) being disposed within the housing of the adapter (12), the coupling ring (14) connecting the adapter (12) to the package (15).
CN202110461589.5A 2021-04-27 2021-04-27 Packaging device of electroabsorption modulation laser Pending CN113078550A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110461589.5A CN113078550A (en) 2021-04-27 2021-04-27 Packaging device of electroabsorption modulation laser

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110461589.5A CN113078550A (en) 2021-04-27 2021-04-27 Packaging device of electroabsorption modulation laser

Publications (1)

Publication Number Publication Date
CN113078550A true CN113078550A (en) 2021-07-06

Family

ID=76618968

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110461589.5A Pending CN113078550A (en) 2021-04-27 2021-04-27 Packaging device of electroabsorption modulation laser

Country Status (1)

Country Link
CN (1) CN113078550A (en)

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