WO2020082707A1

WO2020082707A1 - Semiconductor optical amplifier chip, optical receiving sub-component and optical module

Info

Publication number: WO2020082707A1
Application number: PCT/CN2019/084778
Authority: WO
Inventors: 余力强; 牟晋博; 刘俊锋; 崔振威; 齐鸣; 里阿尔曼·伊恩
Original assignee: 华为技术有限公司
Priority date: 2018-10-26
Filing date: 2019-04-28
Publication date: 2020-04-30
Also published as: CN111106526B; CN111106526A

Abstract

The present application discloses a semiconductor optical amplifier chip. The chip comprises an active region, a light waveguide and N electrodes electrically isolated with each other, which are arranged on a substrate in sequence. The active region includes N sub active regions, and the electrodes correspond to the sub active regions one by one. Each of said sub active regions is used for adjusting the size of the optical signal transmitted in the light waveguide covered by the corresponding electrode, and at least one sub active region is used for performing amplification on the optical signal transmitted in the light waveguide covered by the corresponding electrode. In such a way, the semiconductor optical amplifier chip provided by the present application can satisfy the demands within a large dynamic range through adjusting the size of optical signal by each sub active region. Moreover, the present application further provides an optical receiving sub-component and an optical module.

Description

Semiconductor optical amplifier chip, optical receiving subassembly and optical module

This application requires the priority of the Chinese patent application filed on October 26, 2018, with the application number 201811259612.7 and the invention titled "semiconductor optical amplifier chip, optical receiving subassembly and optical module", the entire contents of which are incorporated by reference In this application.

Technical field

The present application relates to the technical field of optical communication, and in particular, to a semiconductor optical amplifier chip, a light receiving subassembly including the semiconductor optical amplifier chip, and an optical module.

Background technique

A semiconductor optical amplifier (Semiconductor Optical Amplifier, SOA) is an optoelectronic device that uses semiconductor materials as a gain medium and can amplify external photons or provide gain. Existing semiconductor optical amplifier chips generally can only achieve the gain to the optical signal, but cannot meet the requirements of a larger dynamic range.

Summary of the invention

In view of this, the present application provides a semiconductor optical amplifier chip, a light receiving subassembly including the semiconductor optical amplifier chip, and an optical module.

In order to achieve the above purpose of the invention, the present application adopts the following technical solutions:

The first aspect of the present application provides a semiconductor optical amplifier chip, including:

Substrate

An active region located on the substrate, the active region including N sub-active regions; N is an integer greater than or equal to 2;

An optical waveguide located on the active area, the optical waveguide extending from the incident end of the semiconductor optical amplifier chip to the exit end of the semiconductor optical amplifier chip;

And, covering the N electrodes on the optical waveguide along the length of the optical waveguide; the two adjacent electrodes are electrically isolated; the length of the optical waveguide is the optical waveguide from the semiconductor light The extending direction of the incident end of the amplifier chip toward the exit end of the semiconductor optical amplifier chip;

Wherein, the N electrodes and the N sub-active areas are in one-to-one correspondence, and the projection of each electrode in the active area is located in the corresponding sub-active area in a direction perpendicular to the active area Within

Among the N sub-active areas, each of the sub-active areas is used to adjust the size of the optical signal transmitted in the optical waveguide covered by the corresponding electrode, wherein at least one of the sub-active areas is used to The optical signals transmitted in the optical waveguide covered by the electrodes are amplified.

A semiconductor optical amplifier chip provided based on the first aspect of the present application includes an active region, an optical waveguide, and N mutually electrically isolated electrodes on a substrate in sequence, wherein the active region includes a plurality of sub-active regions, and the electrode and the sub-region There is a one-to-one correspondence with the active areas. In the plurality of sub-active areas, each of the sub-active areas is used to adjust the size of the optical signal transmitted in the optical waveguide covered by the corresponding electrode, wherein at least one of the sub-areas has The source area is used to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode. In this way, the semiconductor optical amplifier chip provided by the present application can satisfy the greater dynamics by adjusting the size of the optical signal size of each sub-active area Range of needs.

In a possible implementation manner, among the N sub-active areas, at least one of the sub-active areas is used for absorbing and processing an optical signal transmitted in an optical waveguide covered by a corresponding electrode.

In the semiconductor optical amplifier chip provided in this embodiment, part of the sub-active area amplifies the optical signal transmitted in the optical waveguide covered by the corresponding electrode, and part of the sub-active area transmits the optical signal transmitted in the optical waveguide covered by the corresponding electrode The optical signal is subjected to absorption processing. It should be known that when part of the sub-active area absorbs the optical signal from the optical waveguide covered by the corresponding electrode, the optical signal transmitted in the optical waveguide can be attenuated to a certain extent, that is, it can play The role of variable optical attenuator. Therefore, the semiconductor optical amplifier chip provided in this embodiment can realize the functions commonly achieved by the variable optical attenuator and the semiconductor optical amplifier in the prior art, and compared with the prior art, the size of the semiconductor optical amplifier chip provided in this embodiment It is small and can meet the small size requirements of the optical module.

In a possible implementation manner, along the length direction of the optical waveguide, at least two of the N electrodes have different lengths. This implementation can enable the semiconductor optical amplifier chip to better meet the requirements of a larger dynamic range.

In a possible implementation manner, among the N electrodes, the sub-active area corresponding to the electrode with the longest length is used to amplify the optical signal transmitted in a part of the optical waveguide covered by the electrode with the longest length deal with.

In a possible implementation manner, among the N electrodes, the sub-active area corresponding to the electrode with the shortest length is used to amplify the optical signal transmitted in a part of the optical waveguide covered by the electrode with the shortest length or Absorption treatment.

In a possible implementation manner, among the N electrodes, except for the electrode with the longest length, the sub-active area corresponding to each electrode is used to transmit a portion of the optical waveguide covered by the corresponding electrode The optical signal is amplified or absorbed.

In a possible implementation, the electrode with the longest length is close to the exit end of the semiconductor optical amplifier chip.

A second aspect of the present application provides a light-receiving subassembly including a first lens, a second lens, and a semiconductor optical amplifier chip as described in the first aspect and any possible implementation manner thereof. The first lens is used to collect incident optical signals and couple the collected optical signals to the semiconductor optical amplifier chip. The semiconductor optical amplifier chip is used for power adjustment of the optical signal coupled from the first lens, and coupling the optical signal after power adjustment to the second lens; the second lens is used for The optical signals coupled at the semiconductor optical amplifier are converged.

In this second aspect, the semiconductor amplifier chip integrated in the light-receiving subassembly is any semiconductor optical amplifier chip provided in the first aspect above. Because the semiconductor optical amplifier chip provided by the present application can satisfy the requirements of a larger dynamic range through the adjustment degree of the optical signal size of each sub-active area.

Further, part of the sub-active area of the semiconductor optical amplifier chip amplifies the optical signal from the corresponding optical waveguide, and part of the sub-active area absorbs the optical signal from the corresponding optical waveguide (relative to When the function of optical attenuation is reached), the semiconductor optical amplifier chip can achieve the effect achieved by the two optical devices of the optical amplifier and the variable optical attenuator in the prior art. Since the semiconductor optical amplifier chip can also realize the function of optical attenuation, the variable optical attenuator can no longer be integrated, so compared with the prior art, the effect of reducing the size of the optical module can be achieved.

In a possible implementation manner, the light-receiving subassembly further includes a light detector, and the second lens is further used to couple the converged optical signal to the light detector, and the light detector is used to The collected optical signals are converted into electrical signals to realize the conversion of photoelectric signals.

In a possible implementation manner, the light-receiving subassembly further includes: a circuit board, and the circuit board is used to implement transmission of electrical signals between the plurality of components and an external control circuit.

In a possible implementation manner, the structures and / or materials in the N sub-active regions are completely the same. This implementation can simplify the process and reduce costs.

In a possible implementation manner, the structures and / or materials in the N sub-active regions are not completely the same. In this implementation, the semiconductor optical amplifier has better performance.

In a possible implementation manner, a transimpedance amplifier is further included. The transimpedance amplifier is used to amplify the electrical signal generated by the photodetector for signal detection.

In a possible implementation manner, a carrier board is further included, and the carrier board is used to carry the semiconductor optical amplifier chip.

In a possible implementation manner, an isolator is further included, and the isolator is used to optically isolate the optical signal emerging from the optical plug to ensure unidirectional transmission of incident light.

In a possible implementation manner, an optical plug is further included, and the optical plug is used to fix the light-receiving subassembly with an external optical fiber ferrule.

In a possible implementation manner, the multiple component parts further include: an optical demultiplexer, located between the second lens and the photodetector, and configured to convert the incident optical signal according to different wavelengths Differentiate, realize wavelength demultiplexing, and enter the corresponding photodetector.

In a possible implementation manner, the optical demultiplexer is a demultiplexer structure based on free space or an optical demultiplexer structure based on an optical waveguide type structure. This implementation can enable the optical receiving sub-component to meet the requirements of the wavelength division multiplexing scenario.

In a possible implementation manner, the multiple components further include: a semiconductor refrigerator, which is used to perform temperature control for the semiconductor optical amplifier chip. This implementation can reduce the influence of higher temperature on the semiconductor optical amplifier chip.

In a possible implementation manner, the light-receiving sub-assembly further includes: a light-receiving sub-assembly case, which is used to provide a bearing and an airtight package for the plurality of components. This implementation can achieve hermetically sealed components inside the light receiving subassembly.

A third aspect of the present application provides an optical module, including: a control circuit and the light-receiving sub-assembly as described in the second aspect and any possible implementation manner thereof, and one end of the control circuit is respectively connected to the chip located in the chip N electrodes are used to provide driving signals to the N electrodes, respectively, to drive the sub-active areas of the active area corresponding to each electrode to amplify or absorb the optical signal.

The optical module provided in the third aspect of the present application includes any one of the optical receiving subassemblies provided in the second aspect above. Because ROSA integrates a semiconductor optical amplifier chip that can meet a large dynamic range, there is no need to integrate a variable optical attenuator chip at the receiving end of the optical module, so the optical module will not have the manufacturing semiconductor optical amplifier chip and variable The problem of incompatible process of the optical attenuator chip can effectively reduce the manufacturing cost of the receiving end of the optical module. Moreover, since the semiconductor optical amplifier chip provided in this application can satisfy a large dynamic range, integrating the semiconductor optical amplifier chip into the ROSA can ensure the small size, low cost, and high performance of the ROSA. Therefore, compared with the existing optical module structure (which uses discrete VOA + SOA and ROSA devices), the optical module provided in this application integrates a monolithic integrated SOA chip into ROSA, without the need for discrete VOA + SOA And ROSA device form, therefore, can reduce the size and cost of the optical module, so that the optical module can realize the QSFP28 (Quad small form-factor pluggabe, four-channel SPF interface) 28 package form.

In a possible implementation manner, the other end of the control circuit is connected to the photodetector, and the control circuit is further used to receive the report signal of each of the N electrodes and the photodetector ’s Report the signal, and adjust the drive signals respectively issued by the control circuit to the N electrodes according to the received report signal.

In a possible implementation manner, the control circuit adjusts the drive signals respectively issued by the control circuit to the N electrodes according to the received report signal, which specifically includes: the control circuit selects from the pre-configured report signal and drive Find the driving signal corresponding to the received report signal in the corresponding relationship of the signals; deliver the found driving signals to the corresponding electrodes respectively.

Compared with the prior art, this application has the following beneficial effects:

Based on the above technical solution, it can be known that the semiconductor optical amplifier chip provided by the present application includes an active region, an optical waveguide, and N electrically isolated electrodes that are sequentially located on the substrate. Among them, the active region includes a plurality of sub-active regions, and the electrodes and the sub-active regions have a one-to-one correspondence. Among the plurality of sub-active areas, each of the sub-active areas is used to adjust the size of the optical signal transmitted in the optical waveguide covered by the corresponding electrode, wherein at least one of the sub-active areas is used to control the corresponding electrode The optical signal transmitted in the covered optical waveguide is amplified. In this way, the semiconductor optical amplifier chip provided by the present application can meet the requirements of a larger dynamic range through the adjustment degree of the optical signal size of each sub-active area.

BRIEF DESCRIPTION

In order to more clearly explain the embodiments of the present application or the technical solutions in the prior art, the following will briefly introduce the drawings used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only These are the embodiments described in this application. For those of ordinary skill in the art, without paying any creative labor, other drawings can also be obtained based on these drawings.

1A to 1D are schematic structural diagrams of a semiconductor optical amplifier chip including two sub-active regions and two electrodes provided by embodiments of the present application;

2 is a schematic structural diagram of a semiconductor optical amplifier chip including three sub-active regions and three electrodes provided by an embodiment of the present application;

3 is a schematic structural diagram of an optical receiving subassembly provided by an embodiment of the present application;

4 is a schematic structural diagram of an optical module provided by an embodiment of the present application.

detailed description

Based on the background technology, it is known that the existing semiconductor optical amplifier chips cannot meet the requirements of a large dynamic range.

In order to realize that the semiconductor optical amplifier chip has a large dynamic range, the semiconductor optical amplifier chip provided by the present application includes an active region, an optical waveguide, and N electrically isolated electrodes that are sequentially located on the substrate. Among them, the active region includes a plurality of sub-active regions, and the electrodes and the sub-active regions have a one-to-one correspondence. Among the plurality of sub-active areas, each of the sub-active areas is used to adjust the size of the optical signal transmitted in the optical waveguide covered by the corresponding electrode, wherein at least one of the sub-active areas is used to control the corresponding electrode The optical signal transmitted in the covered optical waveguide is amplified. In this way, the semiconductor optical amplifier chip provided by the present application can meet the requirements of a larger dynamic range through the adjustment degree of the optical signal size of each sub-active area.

In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be described clearly and completely in conjunction with the drawings in the embodiments of the present application.

Please refer to FIGS. 1A to 1D. FIG. 1A is a schematic diagram of a three-dimensional structure of a semiconductor optical amplifier chip including two sub-active regions and two electrodes provided by an embodiment of the present application. FIG. 1B is taken along the direction II in FIG. 1A. 1C is a schematic diagram of a three-dimensional structure of another semiconductor optical amplifier chip including two sub-active regions and two electrodes provided by an embodiment of the present application. FIG. 1D is a schematic diagram of a cross-sectional structure along the direction II in FIG. 1C ,

In FIGS. 1A and 1B, the semiconductor optical amplifier chip includes: a substrate 11, an active region 12 above the substrate 11, an optical waveguide 13 above the active region 12, and, along the length of the optical waveguide 13 The direction covers the first electrode 141 and the second electrode 142 of the optical waveguide 13.

The active area 12 includes a first sub-active area 121 and a second sub-active area 122. The first electrode 141 and the second electrode 142 are electrically isolated. The longitudinal direction of the optical waveguide 13 is the extending direction of the optical waveguide 13 from the incident end of the semiconductor optical amplifier chip to the exit end of the semiconductor optical amplifier chip.

The first electrode 141 corresponds to the first sub-active area 121, and the length of the first electrode 141 and the first sub-active area 121 are equal. When the first electrode 141 projects in a direction perpendicular to the plane where the first active region 121 is located, the projection is located in the first sub-active region 121.

The second electrode 142 corresponds to the second sub-active area 122, and the length of the second electrode 142 and the second sub-active area 122 are equal. When the second electrode 142 projects in a direction perpendicular to the plane of the second active region 122, the projection is located in the second sub-active region 122.

In the above first sub-active area 121 and second sub-active area 122, each sub-active area is used to adjust the size of the optical signal transmitted in the optical waveguide covered by the corresponding electrode, and at least one sub-active area has The source area is used to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode. As an example, the first sub-active area 121 is used to amplify the optical signal transmitted in the optical waveguide covered by the first electrode 141. The second sub-active area 122 is used to perform amplification processing or absorption processing on the optical signal transmitted in the optical waveguide covered by the second electrode 142.

As another embodiment of the present application, as shown in FIGS. 1C and 1D, in order to protect the first electrode 141, the second electrode 142, and the optical waveguide 13, the above-mentioned semiconductor optical amplifier chip may further include a cladding first electrode 141 and the first protective layer 151 of the optical waveguide under the first electrode 141, and the second protective layer 152 covering the second electrode 142 and the optical waveguide under the second electrode 142.

As an example, the first protective layer 151 and the second protective layer 152 may be made of silicon dioxide material.

As an example of the present application, in order to achieve electrical isolation between the first electrode 141 and the second electrode 142, a resistance may be provided in the gap between the first electrode 141 and the second electrode 142. Moreover, in order to achieve a better electrical isolation effect, the resistance of the resistor is higher, for example, it can be above 10 kΩ.

As another example of the present application, the first electrode 141 and the second electrode 142 may be made of a metal material. Accordingly, both the first electrode 141 and the second electrode 142 are metal electrodes.

As another example of the present application, in order to simplify the process steps of the semiconductor optical amplifier and reduce the process cost, the material and structure of each sub-active region may be completely the same. In this way, each sub-active area can be manufactured through a synchronous process, thereby simplifying the process and reducing costs.

In addition, as an extension of the embodiments of the present application, in order to match different application scenarios, the internal materials in each sub-active area may not be completely the same, and the internal structure may also be not completely the same, thereby making the manufactured semiconductor optical amplifier better Performance.

In addition, it should be noted that the absorption and amplification of light in each sub-active area are related to its length. When the length is longer, the absorption and amplification are larger, and when the length is shorter, the absorption and amplification are smaller. Therefore, in order to satisfy different degrees of amplification or absorption of incident light, the lengths of the plurality of sub-active regions of the semiconductor optical amplifier chip may not be completely equal. In addition, when the incident light includes a plurality of lights of different wavelengths, in order to ensure that the semiconductor optical amplifier chip can realize the absorption or amplification of the same amplitude of light of different wavelengths, the semiconductor optical amplifier chip may include a plurality of sub-components of different lengths The active region, as such, also requires that the lengths of multiple sub-active regions may not be exactly equal.

In this application, the length of the sub-active area is approximately equal to the length of its corresponding electrode, and the maximum difference between the two is the length of the electrically isolated area. The length of the electrically isolated region is generally only a few microns, so the length of the sub-active area and the length of its corresponding electrode can be regarded as equal.

Therefore, as an example of the present application, in order to better meet the requirement that the chip has a large dynamic range, the lengths of the first electrode 141 and the second electrode 142 may be equal or unequal.

As a specific example, the length of the first electrode 141 is 20-100 μm, and the length of the second electrode 142 is 400-1500 μm. As a more specific example, in order to meet the specifications of 100G optical modules in 40km and 80km long-distance application scenarios, the length of the first electrode 141 is 30 μm, and the length of the second electrode 142 is 700 μm.

In order to match most application scenarios, the sub-active area corresponding to the electrode with the longest length included in the multiple sub-active areas of the semiconductor optical amplifier chip can amplify the optical signal, regardless of the power of the incident light, the length is the most The sub-active areas corresponding to the long electrodes are all turned on. The sub-active area corresponding to the electrode with the longest length can absorb or amplify the optical signal according to the requirements of the dynamic range and the loaded control signal (or bias voltage or bias current), which can be based on the power of the incident light It can be adjusted to the on state or the off state, and the gain in the on state or the attenuation in the off state can be adjusted by the size of the control signal.

In addition, as a specific example of the present application, among the electrodes of different lengths, the sub-active region corresponding to the electrode with the longest length is close to the output end of the semiconductor optical amplifier chip, and the output end is a semiconductor optical amplifier chip The end farthest from the incident light.

In addition, due to the limitations of the existing manufacturing process, the length of the sub-active area cannot be too short. In addition, when the sub-active area is too short, the expected light absorption effect may not be achieved. The length cannot be too short. In addition, the length of the sub-active area cannot be too long, because the length is too long, which results in a lot of optical noise. Therefore, the length of the sub-active area in the semiconductor optical amplifier may be between 20-1500 microns.

As another specific example of the present application, in order to simplify the process steps of the semiconductor optical amplifier chip and reduce the process cost, each sub-active region may have the same material and structure except that the length is different. In this way, the sub-active areas can be manufactured through a synchronous process.

As another specific example of the present application, in order to improve the ability of the semiconductor optical amplifier to adjust the incident optical power, each sub-active area may adopt the structure of the active area in the semiconductor laser. More specifically, the semiconductor laser structure may be a semiconductor laser structure based on a bulk material, a semiconductor laser structure based on a quantum well structure, or a semiconductor laser structure based on quantum dots.

In addition, in the embodiment of the present application, each electrode may control its corresponding sub-active area to be in a different working state according to the received control signal, and the control signal may be a bias current or a bias voltage.

In order to more clearly understand the working principle of the semiconductor optical amplifier chip provided by the embodiment of the present application, the following uses the working principle of the semiconductor optical amplifier chip including two sub-active regions and two electrodes as an example for description.

When the semiconductor optical amplifier chip is in operation, the first electrode 141 can control the first sub-active area 121 to be in a different working state according to the received first control signal; the second electrode 142 can control the second sub-active area according to the received second control signal The source area 122 is in a different working state.

It should be noted that, in the embodiment of the present application, each sub-active area may be in two different working states of on and off. When the sub-active area is turned on, the sub-active area is used to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode, and the amplified gain can be adjusted by adjusting the size of the control signal; when the sub-active area When in the off state, the sub-active area is used to absorb the optical signal transmitted in the optical waveguide covered by the corresponding electrode, and the magnitude of attenuation can be adjusted by adjusting the size of the control signal.

As an example, according to the power of the optical signal incident on the semiconductor optical amplifier chip, the first sub-active area 121 may be used to absorb or amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode, and the second sub-active area 122 can be used to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode.

As a more specific example, the following describes the working state of each sub-active area when the power of the optical signal incident into the semiconductor optical amplifier chip is different.

When the incident light incident into the semiconductor optical amplifier chip is low power (for example, -24 dBm to -14 dBm), the specific implementation of the working state of each sub-active area is as follows:

The first electrode 141 will control the first sub-active area 121 to be turned on according to the first control signal to amplify the optical signal transmitted in the optical waveguide covered by the first electrode 141; the first electrode 142 will be controlled according to the second control signal The second sub-active area 122 is in an on state, and amplifies the optical signal transmitted in the optical waveguide covered by the first electrode 142. At this time, each sub-active area of the semiconductor optical amplifier amplifies the incident light to ensure that the optical power output by the semiconductor optical amplifier is not too small, thereby ensuring that the sensitivity performance of the subsequent optical detector meets the requirements.

When the incident light incident on the semiconductor optical amplifier chip is medium power (for example, -16dBm to -6dBm), the working state of each sub-active area may adopt the following two embodiments:

First implementation

The first electrode 141 controls the first sub-active area 121 to be in an on state according to the first control signal, so that the first sub-active area 121 is in an on state, and performs a certain amount of light signal transmission in the optical waveguide covered by the first electrode 141 The degree of amplification needs to be explained that the signal value of the first control signal (bias current or bias voltage) is smaller than that of the low-power incident light control method, thereby reducing the light covered by the first electrode 141 The gain of the optical signal transmitted in the waveguide; the second electrode 142 will control the second sub-active area 122 to be turned on according to the second control signal to amplify the optical signal transmitted in the optical waveguide covered by the second electrode 142. At this time, the semiconductor optical amplifier can perform a low degree of amplification and a high degree of amplification on the incident light through the sub-active area, so as to comprehensively achieve a moderate degree of optical power amplification on the incident light, so that the subsequent photodetector The received optical power can be within a reasonable range (for example, -8dBm to + 3dBm).

Second embodiment

The first electrode 141 controls the first sub-active area 121 to be in an on state according to the first control signal, so that the first sub-active area 121 is in an on state, and performs a certain amount of light signal transmission in the optical waveguide covered by the first electrode 141 The degree of amplification needs to be explained that the signal value of the first control signal (bias current or bias voltage) is smaller than that of the low-power incident light control method, thereby reducing the light covered by the first electrode 141 The gain of the optical signal transmitted in the waveguide; the second electrode 142 will control the second sub-active area 122 to be turned on according to the second control signal, and amplify the optical signal transmitted in the optical waveguide covered by the second electrode 142 to a certain degree It should be noted that the signal value of the second control signal (bias current or bias voltage) is smaller than that of the control method of incident light of low power, thereby reducing the transmission within the optical waveguide covered by the second electrode 142 The gain of the optical signal. At this time, the semiconductor optical amplifier can sequentially amplify the incident light twice through the sub-active area, so as to comprehensively achieve a moderate degree of optical power amplification of the incident light, so that the optical power received by the subsequent optical detector can be in Within a reasonable range (for example, -8dBm to + 3dBm).

When the incident light incident into the semiconductor optical amplifier chip is high power (for example, -8dBm to + 5dBm), the specific implementation of the working state of each sub-active area is as follows:

The first control signal turns off the first sub-active area 121, so that the first sub-active area 121 is turned off, and attenuates the optical signal transmitted in the optical waveguide covered by the first electrode 141; The control signal controls the second sub-active area 122 to be in an on state, and amplifies the optical signal transmitted in the optical waveguide covered by the second electrode 142; at this time, the incident light can be amplified to a lesser degree, so that the subsequent The optical power received by the photodetector can be within a reasonable range (for example, -8dBm to + 3dBm).

The above is a specific implementation manner of a semiconductor optical amplifier chip provided by an embodiment of the present application. In this specific implementation, it includes two sub-active areas, and each sub-active area can be used to adjust the size of the optical signal transmitted in the optical waveguide covered by the corresponding electrode. Specifically to the embodiment of the present application, the first sub-active area 121 and the second sub-active area 122 may adjust the size of the optical signal in the corresponding optical waveguide according to the size of the incident optical signal and the loaded control signal, so that Semiconductor optical amplifier chips can meet the needs of a larger dynamic range.

In the above embodiments, the semiconductor optical amplifier chip includes two sub-active regions as an example for description. In fact, as an extension of the embodiments of the present application, in order to meet the requirements of a larger dynamic range, the embodiments of the present application provide The semiconductor optical amplifier chip may also include three or more sub-active regions. As an example, the specific structure of a semiconductor optical amplifier chip including three sub-active areas is described below.

Please refer to FIG. 2, which is a schematic structural diagram of a semiconductor optical amplifier chip including three sub-active regions and three electrodes provided by an embodiment of the present application.

In FIG. 2, the semiconductor optical amplifier chip includes a substrate 11, an active region 12 located above the substrate 11, an optical waveguide 13 located above the active region 12, and covering the optical waveguide along the length of the optical waveguide 13 13, the first electrode 141, the second electrode 142, and the third electrode 143.

The active area 12 includes a first sub-active area 121, a second sub-active area 122, and a third sub-active area 123. The first electrode 141 and the second electrode 142 are electrically isolated, and the second electrode 142 and the third electrode 143 are electrically isolated. Specifically, the longitudinal direction of the optical waveguide 13 is the extending direction of the optical waveguide 13 from the incident end of the semiconductor optical amplifier chip to the exit end of the semiconductor optical amplifier chip.

The first electrode 141 corresponds to the first sub-active area 121. When the first electrode 141 projects in a direction perpendicular to the plane where the first active region 121 is located, the projection is located in the first sub-active region 121.

The second electrode 142 corresponds to the second sub-active area 122. When the second electrode 142 projects in a direction perpendicular to the plane in which the second active region 122 lies, the projection is located in the second sub-active region 122.

The third electrode 143 corresponds to the third sub-active area 123. When the third electrode 143 projects in a direction perpendicular to the plane of the third active region 123, the projection is located in the third sub-active region 123.

In the above-mentioned first sub-active area 121, second sub-active area 122 and third sub-active area 123, wherein each of the sub-active areas is used for the light transmitted in the optical waveguide covered by the corresponding electrode The size of the signal is adjusted, and at least one sub-active area is used to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode.

In order to further clearly understand the working principle of the semiconductor optical amplifier chip provided by the embodiment of the present application, the working principle of the semiconductor optical amplifier chip including 3 sub-active regions and 3 electrodes is taken as an example for further description below.

When the semiconductor optical amplifier chip is in operation, the first electrode 141 can control the first sub-active area 121 to be in a different working state according to the received first control signal; the second electrode 142 can control the second sub-active area according to the received second control signal The source area 122 is in a different working state. The third electrode 143 may control the third sub-active area 123 to be in different working states according to the received third control signal.

As an example, according to the power of the optical signal incident on the semiconductor optical amplifier chip, the first sub-active area 121 and the second sub-active area 122 may be used to absorb the optical signal transmitted in the optical waveguide covered by the corresponding electrode, respectively Or amplification, the third sub-active area 123 may be used to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode.

Specific example one

When the incident light incident into the semiconductor optical amplifier chip is low power (for example, -24 dBm to -14 dBm), the first electrode 141 will control the first sub-active area 121 to be turned on according to the first control signal. The optical signal transmitted in the optical waveguide covered by the electrode 141 is amplified; the second electrode 142 will control the second sub-active area 122 to be turned on according to the second control signal, and the optical signal transmitted in the optical waveguide covered by the second electrode 142 Amplify; the third electrode 143 will control the third sub-active area 123 to be turned on according to the third control signal to amplify the optical signal transmitted in the optical waveguide covered by the third electrode 143; at this time, each of the semiconductor optical amplifiers Each sub-active area amplifies the incident light to ensure that the optical power output by the semiconductor optical amplifier is not too small, thereby ensuring that the sensitivity performance of the subsequent optical detector meets the requirements.

When the incident light incident into the semiconductor optical amplifier chip is medium power (for example, -16dBm to -6dBm), the first control signal turns off the first sub-active area 121, so that the first sub-active area 121 is turned off, The optical signal transmitted in the optical waveguide covered by the first electrode 141 is attenuated to a certain degree; the second electrode 142 will control the second sub-active area 122 to be turned on according to the second control signal, The optical signal transmitted in the waveguide is amplified; the third electrode 143 will control the third sub-active area 123 to be turned on according to the third control signal to amplify the optical signal transmitted in the optical waveguide covered by the third electrode 143; The semiconductor optical amplifier can amplify the incident light with a moderate degree of optical power, so that the optical power received by the subsequent optical detector can be within a reasonable range (for example, -8dBm to + 3dBm).

When the incident light into the semiconductor optical amplifier chip is high power (for example, -8dBm to + 5dBm), the first control signal turns off the first sub-active area 121, so that the first sub-active area 121 is in an absorption state, Attenuate the optical signal transmitted in the optical waveguide covered by the first electrode 141; the second electrode 142 will control the second sub-active area 122 to be turned off according to the second control signal, and transmit the optical waveguide covered by the second electrode 142 The optical signal of the third electrode 143 will be attenuated; the third electrode 143 will control the third sub-active area 123 to be turned on according to the third control signal to amplify the optical signal transmitted in the optical waveguide covered by the third electrode 143; The incident light is amplified to a lesser degree, so that the optical power received by the subsequent photodetector can be within a reasonable range (for example, -8dBm to + 3dBm).

Specific example two

When the incident light incident on the semiconductor optical amplifier chip is medium power (for example, -16dBm to -6dBm), the first electrode 141 will control the first sub-active area 121 to be turned on according to the first control signal. The optical signal transmitted in the optical waveguide covered by the electrode 141 is amplified; the second electrode 142 will control the second sub-active area 122 to be turned on according to the second control signal, and the optical signal transmitted in the optical waveguide covered by the second electrode 142 Amplify; the third electrode 143 will control the third sub-active area 123 according to the third control signal. It should be noted that the third control signal (bias current or bias) The signal value of the voltage) is small, thereby reducing the gain of the optical signal transmitted in the optical waveguide covered by the third electrode 143; at this time, the semiconductor optical amplifier can amplify the optical power of the incident light to a moderate degree, thereby enabling subsequent light detection The optical power received by the transmitter can be within a reasonable range (for example, -8dBm to + 3dBm).

When the incident light incident into the semiconductor optical amplifier chip is of high power (for example, -8dBm to + 5dBm), the first electrode 141 will control the first sub-active area 121 to be turned on according to the first control signal. The optical signal transmitted in the optical waveguide covered by the electrode 141 is amplified; the second electrode 142 will control the second sub-active area 122 according to the second control signal. It should be noted that compared to the control method of small-power incident light, the The signal value of the second control signal (bias current or bias voltage) is small, thereby reducing the gain of the optical signal transmitted in the optical waveguide covered by the first electrode 142; the third electrode 143 will control the first signal according to the third control signal. The three-sub-active area 123, it should be noted that the signal value of the third control signal (bias current or bias voltage) is smaller than the control method of incident light of low or medium power; at this time, the semiconductor The optical amplifier can perform small gain or even attenuation of the incident light; at this time, the incident light can be amplified to a lesser degree, so that the optical power received by the subsequent optical detector can be in Within a reasonable range (for example, -8dBm to + 5dBm).

Specific example three

When the incident light incident into the semiconductor optical amplifier chip is high power (for example, -8 dBm to +5 dBm), the first electrode 141 will control the first sub-active area 121 according to the first control signal, and compared with the low power Or the control method of incident light of medium power, the signal value of the first control signal is reduced; the second electrode 142 will control the second sub-active area 122 to be in an on state according to the second control signal, and cover the optical waveguide covered by the corresponding electrode The transmitted optical signal is amplified; the third electrode 143 will control the third sub-active area 123 according to the third control signal, and the signal value of the third control signal is always At a lower value; at this time, the semiconductor optical amplifier can amplify or even attenuate the incident light by a small amount of optical power; at this time, it can amplify the incident light to a lesser degree, so that subsequent optical detectors receive The optical power can be within a reasonable range (for example, -8dBm to + 5dBm).

The above is another specific implementation manner of the semiconductor optical amplifier chip provided by the embodiment of the present application. In this specific implementation, three sub-active areas are included. Therefore, compared with the semiconductor optical amplifier chip shown in FIG. 1, the semiconductor optical amplifier chip shown in FIG. 2 can more easily meet the needs of a larger dynamic range.

It should be noted that, in the above embodiments, a semiconductor optical amplifier chip including two or three sub-active regions is taken as an example for description. In fact, as an extension of the embodiments of the present application, the semiconductor optical amplifier chip provided by the embodiments of the present application can meet the requirements of a larger dynamic range as long as it includes two or more sub-active regions. Specifically, the number of sub-active regions included in the semiconductor optical amplifier chip provided by the embodiment of the present application may be other integer values such as 2, 3, and 4.

Based on the semiconductor optical amplifier chip provided above, an embodiment of the present application further provides a light receiving subassembly (Receiver Optical Subassembly, ROSA), which will be explained and explained below in conjunction with the drawings.

Refer to FIG. 3, which is a schematic structural diagram of a light-receiving subassembly provided by an embodiment of the present application.

The ROSA provided in this embodiment of the present application includes: multiple component parts and a circuit board 301, wherein the multiple component parts include an optical plug 302, an isolator 303, a first lens 304, a semiconductor optical amplifier chip 305, a carrier board 306, and a second A lens 307, a light detector 308, and a transimpedance amplifier (Transimpedance Amplifier, TIA) 309.

The circuit board 301 is used to realize the transmission of electrical signals between multiple components and external control circuits. In the embodiment of the present application, the circuit board 301 may be an ordinary PCB board or a flexible printed circuit (Flexible Printed Circuit, FPC). Because the thickness and weight of the flexible circuit board are small, and have flexibility, and good resistance to vibration and shock, the use of FPC board can reduce the weight and thickness of the product containing ROSA, and make the product flexible.

In addition, the circuit board 301 can be connected to an external control circuit through pins or other connection methods.

The optical plug 302 is used to fix the light-receiving subassembly to the external optical fiber ferrule.

The first lens 304 is used for condensing the optical signal incident from the optical fiber ferrule and coupling the condensed optical signal into the semiconductor optical amplifier chip 305.

The isolator 303 is used to optically isolate the optical signal emitted from the optical plug 302 to ensure unidirectional transmission of incident light.

The semiconductor optical amplifier chip 305 is used for power adjustment of the optical signal coupled from the first lens 304. Moreover, the semiconductor optical amplifier chip 305 may be any one of the semiconductor optical amplifier chips provided in the above embodiments.

The carrier board 306 is used to carry the semiconductor optical amplifier chip 305.

The second lens 307 is used for condensing the optical signal emitted from the semiconductor optical amplifier chip 305 and coupled to the photodetector 308.

The photodetector 308 is used to convert the collected optical signal into an electric signal to realize the conversion of the photoelectric signal.

The transimpedance amplifier 309 is used to amplify the electrical signal generated by the photodetector 308 for signal detection.

As an alternative embodiment of the present application, when the semiconductor optical amplifier chip 305 supports the cooling operation, in order to reduce the influence of higher temperature on the semiconductor optical amplifier chip 305, in the ROSA provided by the embodiment of the present application, the above Individual components can also include:

A semiconductor cooler (ThermoElectricCooler, TEC) 310 is used for temperature control of the semiconductor optical amplifier chip 305.

It should be noted that the semiconductor refrigerator 310 is not an indispensable component in ROSA. If the temperature change will affect the normal operation of the semiconductor optical amplifier chip 305 (including gain and noise performance), the ROSA needs to be equipped with a semiconductor refrigerator 310; if the temperature change does not affect the normal operation of the semiconductor optical amplifier chip 305, then It is not necessary to install the semiconductor refrigerator 310 in ROSA.

As another optional embodiment of the present application, in order to make ROSA meet the requirements of the wavelength division multiplexing scenario, in the ROSA provided by the embodiment of the present application, the above multiple meta-components may further include:

An optical demultiplexer (ODMUX) 311, located between the second lens 307 and the photodetector 308, is used to distinguish the incident optical signal according to the different wavelengths, to realize wavelength demultiplexing, and incident to the corresponding Of the light detector 308. Furthermore, the structure of the optical demultiplexer 311 may be a demultiplexer structure based on free space, or an optical demultiplexer structure based on an optical waveguide type structure.

It should be noted that the optical demultiplexer 311 is not an indispensable element in ROSA. If ROSA is applied to a WDM scenario, the ROSA needs to be equipped with an optical demultiplexer 311; if ROSA is applied to a single wavelength scenario, the ROSA does not need to be equipped with an optical demultiplexer 311.

As yet another optional embodiment of the present application, in order to realize the bearing and hermetically sealed installation of ROSA, in the ROSA provided in the embodiments of the present application, multiple component parts may further include:

The ROSA tube shell 312 is used to provide bearing and airtight packaging for the above multiple components.

It should be noted that the ROSA bulb 312 is not an indispensable component in ROSA. If the ROSA does not need to be loaded and hermetically sealed, the ROSA may not include the ROSA bulb 312; if the ROSA needs to be loaded and hermetically sealed, the ROSA may include the ROSA bulb 312.

The above is a specific implementation manner of ROSA provided by an embodiment of the present application. In this specific implementation manner, the semiconductor amplifier chip 305 integrated in the ROSA is any semiconductor optical amplifier chip provided by the foregoing embodiment. The semiconductor optical amplifier chip 305 provided by the present application can satisfy the requirements of a larger dynamic range through the degree of adjustment of the optical signal size of each sub-active area. Therefore, in the ROSA in which the semiconductor optical amplifier chip 305 provided by the present application is integrated, in order to meet a larger dynamic range requirement, it is not necessary to integrate the semiconductor optical amplifier chip and the variable light attenuable chip at the same time. Therefore, compared with the ROSA in the prior art, the size of the ROSA provided by the present application is smaller, and a ROSA of a smaller size is realized.

In addition, because ROSA integrates a semiconductor optical amplifier chip that can meet a large dynamic range, the receiving end of the optical module containing the ROSA does not need to integrate a variable light attenuable chip, so the receiving end of the optical module does not need to use a separate For SOA and VOA devices, there is no problem of incompatible processes for manufacturing SOA and VOA. Therefore, the manufacturing cost of the receiving end of the optical module can be effectively reduced.

Moreover, the semiconductor optical amplifier chip 305 provided by the present application can satisfy a large dynamic range, therefore, the gain of the semiconductor optical amplifier chip 305 can be dynamically adjusted according to the power of the incident light. Thus, the ROSA integrated with the semiconductor optical amplifier chip 305 has both The realization of a large dynamic range and the miniaturization of ROSA, and ultimately the miniaturization of the optical module, enable the optical module to realize the QSFP28 package form.

Based on a ROSA provided in the above embodiment, an embodiment of the present application further provides an optical module, which will be explained and explained below with reference to the drawings.

Refer to FIG. 4, which is a schematic structural diagram of an optical module provided by an embodiment of the present application.

The optical module provided in the embodiment of the present application includes: a control circuit 401 and a light receiving subassembly 402, and one end of the control circuit 401 is connected to N electrodes of a semiconductor optical amplifier chip located in the light receiving subassembly 402, respectively, for providing N electrodes The driving signal is used to drive the sub-active area of the active area corresponding to each electrode to amplify or absorb the optical signal.

As another implementation manner, in order to be able to reasonably gain or attenuate different incident light, the control circuit 401 may adjust the driving signal according to the incident light-related reporting signal provided by the light receiving subassembly 402, and adjust the adjusted driving signal The signal is sent to the light receiving subassembly 402.

Wherein, the report signal related to the incident light provided by the light receiving subassembly 402 may be a report signal sent by each electrode of the semiconductor optical amplifier chip in the light receiving subassembly 402, or may be sent by a light detector in the light receiving subassembly 402 The reporting signal may also be a reporting signal obtained by the reporting signal sent by each electrode of the semiconductor optical amplifier chip in the integrated light receiving subassembly 402 and the reporting signal sent by the photodetector.

As an example, one end of the control circuit 401 of the optical module is connected to N electrodes of the semiconductor optical amplifier chip located in the light receiving subassembly 402, and the other end is connected to the photodetector. At this time, the control circuit 401 is also used to receive N electrodes The report signal of each electrode and the report signal of the photodetector, and according to the received report signal, the adjustment control circuit 401 sends drive signals to the N electrodes, respectively.

Wherein, the control circuit 401 adjusts the driving signals respectively issued by the control circuit to the N electrodes according to the received report signal, which may specifically include:

The control circuit 401 searches for the drive signal corresponding to the received report signal from the pre-configured correspondence between the report signal and the drive signal;

Deliver the found driving signals to the corresponding electrodes.

It should be noted that, in order to protect the semiconductor optical amplifier chip, the sub-active area within the semiconductor optical amplifier chip that can amplify and absorb light is initially set to the off state, so that it absorbs incident light and produces a certain attenuation effect on the incident light In this way, the risk of damage to the semiconductor optical amplifier chip when high-power light is incident can be reduced.

For ease of explanation and explanation, the following will take the semiconductor optical amplifier chip including three sub-active regions and three electrodes as an example to describe in detail the working principle of the control circuit in the optical module according to different reported signals in sequence.

The working principle of the control circuit 401 according to the report signal sent by each electrode of the semiconductor optical amplifier chip in the light receiving subassembly 402 may be specifically:

The incident light is incident into the semiconductor optical amplifier chip, and the electrode corresponding to each sub-active area inside the semiconductor optical amplifier chip will generate a first report signal according to the incident light, and then transmit the first report signal to the external control circuit 401.

Then, the control circuit 401 searches for the first driving signal corresponding to the received reporting signal from the pre-configured correspondence between the reporting signal and the driving signal according to the first reporting signal, and delivers the found first driving signal respectively Give the corresponding electrode.

Finally, each electrode controls the working state of the sub-active area corresponding to its corresponding driving signal.

The working principle of the control circuit 401 according to the report signal sent by the photodetector can be specifically:

The incident light enters the semiconductor optical amplifier chip, and the semiconductor optical amplifier chip will gain or attenuate the incident light to output the first photocurrent.

Then, the first photocurrent output from the semiconductor optical amplifier chip undergoes photoelectric conversion, is converted into an optical signal, and is transmitted to the photodetector, and the photodetector also generates a signal corresponding to the optical signal incident into the photodetector The second report signal, and then the second report signal is amplified by the transimpedance amplifier, and then transmitted to the external control circuit 401 through the FPC board.

Secondly, the control circuit 401 searches for the second drive signal corresponding to the received report signal from the pre-configured correspondence between the report signal and the drive signal according to the second report signal, and delivers the found second drive signal respectively Give the corresponding electrode.

Then, each electrode controls the working state of the sub-active area corresponding to its corresponding driving signal.

The working principle of the control circuit 401 according to the report signal sent by each electrode of the semiconductor optical amplifier chip in the light receiving subassembly 402 and the report signal sent by the photodetector may be specifically:

The incident light enters the semiconductor optical amplifier chip, and the semiconductor optical amplifier chip will gain or attenuate the incident light to output the first photocurrent. The first report signal generated by the incident light is transmitted to the external control circuit 401.

Secondly, the control circuit 401 searches for the third drive signal corresponding to the received report signal from the pre-configured correspondence between the report signal and the drive signal according to the first report signal and the second report signal, and compares the found third The driving signals are respectively delivered to the corresponding electrodes.

The above is a specific implementation manner of an optical module provided by an embodiment of the present application. In this specific implementation manner, the optical module includes any ROSA provided by the foregoing embodiment. Because ROSA integrates a semiconductor optical amplifier chip that can meet a large dynamic range, there is no need to integrate a variable optical attenuator chip at the receiving end of the optical module, so the optical module will not have the manufacturing semiconductor optical amplifier chip and variable The problem of incompatible process of the optical attenuator chip can effectively reduce the manufacturing cost of the receiving end of the optical module.

Moreover, since the semiconductor optical amplifier chip provided in this application can satisfy a large dynamic range, integrating the semiconductor optical amplifier chip into the ROSA can ensure the small size, low cost, and high performance of the ROSA. Therefore, compared with the existing optical module structure (which uses discrete VOA + SOA and ROSA devices), the optical module provided in this application integrates a monolithic integrated SOA chip into ROSA, without the need for discrete VOA + SOA And ROSA device form, therefore, can reduce the size and cost of the optical module, so that the optical module can realize the QSFP28 (Quad small form-factor pluggabe, four-channel SPF interface) 28 package form.

It should be noted that the optical modules provided in the embodiments of the present application may be optical modules of various rates and various distances. For example, 100G optical module, 40G optical module, etc.

It should be noted that, as an extension of the embodiments of the present application, the semiconductor optical amplifier chip provided by the present application can be used not only in ROSA at the optical receiving end but also in the optical transmitting sub-assembly at the optical transmitting end, by controlling the work of each SOA State to control the optical output power of the optical transmission subassembly.

In addition, the structure and control method of the SOA chip can also be applied to the laser chip at the optical transmission end, and integrated into the laser chip through a monolithic integration.

The above is the specific implementation manner provided by the embodiments of the present application.

Claims

A semiconductor optical amplifier chip is characterized by comprising:

Substrate

An active region on the substrate; the active region includes N sub-active regions; N is an integer greater than or equal to 2;

An optical waveguide located on the active area, the optical waveguide extending from the incident end of the semiconductor optical amplifier chip to the exit end of the semiconductor optical amplifier chip;

And, covering the N electrodes on the optical waveguide along the length of the optical waveguide; the two adjacent electrodes are electrically isolated, and the length of the optical waveguide is the optical waveguide from the semiconductor light The extending direction of the incident end of the amplifier chip toward the exit end of the semiconductor optical amplifier chip;

Wherein, the N electrodes and the N sub-active areas are in one-to-one correspondence, and the projection of each electrode in the active area is located in the corresponding sub-active area in a direction perpendicular to the active area Within

Among the N sub-active areas, each of the sub-active areas is used to adjust the size of the optical signal transmitted in the optical waveguide covered by the corresponding electrode, wherein at least one of the sub-active areas is used to The optical signals transmitted in the optical waveguide covered by the electrodes are amplified.
The chip according to claim 1, wherein, among the N sub-active areas, at least one of the sub-active areas is used for absorbing the optical signal transmitted in the optical waveguide covered by the corresponding electrode.
The chip according to claim 1, wherein at least two of the N electrodes have different lengths along the length of the optical waveguide.
The chip according to claim 3, wherein, among the N electrodes, the sub-active area corresponding to the electrode with the longest length is used to transmit the light in a part of the optical waveguide covered by the electrode with the longest length The optical signal is amplified.
The chip according to claim 4, wherein, among the N electrodes, the sub-active area corresponding to the electrode with the shortest length is used for transmitting the optical signal in the part of the optical waveguide covered by the electrode with the shortest length Enlarge or absorb.
The chip according to claim 4, wherein, among the N electrodes, the sub-active area corresponding to each electrode except the electrode with the longest length is used to cover the portion covered by the corresponding electrode The optical signal transmitted in the optical waveguide is amplified or absorbed.
The chip according to claim 4, wherein the electrode with the longest length is close to the exit end of the semiconductor optical amplifier chip.
A light-receiving subassembly, comprising a first lens, a second lens and the semiconductor optical amplifier chip according to any one of claims 1 to 7;

The first lens is used to converge the incident optical signal and couple the condensed optical signal to the semiconductor optical amplifier chip;

The semiconductor optical amplifier chip is used to perform power adjustment on the optical signal coupled from the first lens, and couple the optical signal after power adjustment to the second lens;

The second lens is used to converge the optical signal coupled from the semiconductor optical amplifier.
The light-receiving sub-assembly according to claim 8, wherein the light-receiving sub-assembly further comprises a light detector, and the second lens is further used to couple the converged optical signal to the light detector, The photodetector is used to convert the collected optical signal into an electric signal to realize the conversion of the photoelectric signal.
The light-receiving sub-assembly according to claim 8 or 9, wherein the light-receiving sub-assembly further comprises: a circuit board, the circuit board is used to realize the communication between the plurality of components and the external control circuit Electrical signal transmission.
An optical module, comprising: a control circuit and the light receiving sub-assembly according to any one of claims 8-10, one end of the control circuit is respectively connected to N electrodes in the chip, A driving signal is provided to the N electrodes, respectively, to drive the sub-active areas of the active area corresponding to each electrode to amplify or absorb the optical signal.
The optical module according to claim 11, wherein the other end of the control circuit is connected to the photodetector, and the control circuit is further used to receive a report signal and all signals of each of the N electrodes The report signal of the photodetector, and according to the received report signal, adjust the drive signals respectively issued by the control circuit to the N electrodes.
The optical module according to claim 12, wherein the control circuit adjusts the driving signals respectively issued by the control circuit to the N electrodes according to the received report signal, specifically including:

The control circuit searches for the drive signal corresponding to the received report signal from the pre-configured correspondence between the report signal and the drive signal;

Deliver the found driving signals to the corresponding electrodes.