CN111106526B

CN111106526B - Semiconductor optical amplifier chip, optical receiving subassembly and optical module

Info

Publication number: CN111106526B
Application number: CN201811259612.7A
Authority: CN
Inventors: 余力强; 牟晋博; 刘俊锋; 崔振威; 齐鸣; 伊恩·里阿尔曼
Original assignee: Haisiguang Electronics Co ltd
Current assignee: Haisiguang Electronics Co ltd
Priority date: 2018-10-26
Filing date: 2018-10-26
Publication date: 2021-10-15
Anticipated expiration: 2038-10-26
Also published as: CN111106526A; WO2020082707A1

Abstract

The application discloses a semiconductor optical amplifier chip, which comprises an active region, an optical waveguide and N electrodes which are sequentially arranged on a substrate and are mutually electrically isolated. The active region comprises N sub-active regions, and the electrodes correspond to the sub-active regions one to one. In the plurality of sub-active regions, each sub-active region is configured to adjust a size of an optical signal transmitted in the optical waveguide covered by the corresponding electrode, and at least one sub-active region is configured to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode. Therefore, the semiconductor optical amplifier chip provided by the application can meet the requirement of a larger dynamic range through the adjustment degree of the optical signal size of each sub-active region. In addition, the application also provides a light receiving subassembly and an optical module.

Description

Semiconductor optical amplifier chip, optical receiving subassembly and optical module

Technical Field

The present application relates to the field of optical communication technologies, and in particular, to a semiconductor optical amplifier chip, a light receiving subassembly including the semiconductor optical amplifier chip, and an optical module.

Background

A Semiconductor Optical Amplifier (SOA) is an optoelectronic device which uses a Semiconductor material as a gain medium and can amplify an external photon or provide a gain. The existing semiconductor optical amplifier chip can only realize the gain of optical signals generally, but can not meet the requirement of larger dynamic range.

Disclosure of Invention

In view of the above, the present application provides a semiconductor optical amplifier chip, a light receiving subassembly including the semiconductor optical amplifier chip, and an optical module.

In order to achieve the purpose of the invention, the following technical scheme is adopted in the application:

a first aspect of the present application provides a semiconductor optical amplifier chip, comprising:

a substrate.

An active region on the substrate, the active region including N sub-active regions; n is an integer greater than or equal to 2.

And the optical waveguide is positioned on the active region and extends from the incident end of the semiconductor optical amplifier chip to the emergent end of the semiconductor optical amplifier chip.

And N electrodes covering the optical waveguide along the length direction of the optical waveguide. And two adjacent electrodes are electrically isolated. The length direction of the optical waveguide is the extending direction of the optical waveguide from the incident end of the semiconductor optical amplifier chip to the emergent end of the semiconductor optical amplifier chip. Wherein the N electrodes correspond to the N sub-active regions one to one. In a direction perpendicular to the active region, a projection of each electrode in the active region is located in a corresponding sub-active region. In the N sub-active regions, each sub-active region is configured to adjust a magnitude of an optical signal transmitted in an optical waveguide covered by a corresponding electrode. And at least one sub-active region is used for amplifying the optical signal transmitted in the optical waveguide covered by the corresponding electrode.

The semiconductor optical amplifier chip provided based on the first aspect of the present application includes an active region, an optical waveguide, and N electrodes electrically isolated from each other, which are sequentially located on a substrate. The active region comprises a plurality of sub-active regions, and the electrodes correspond to the sub-active regions one to one. In the plurality of sub-active regions, each sub-active region is configured to adjust a size of an optical signal transmitted in the optical waveguide covered by the corresponding electrode, and at least one sub-active region is configured to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode. Therefore, the semiconductor optical amplifier chip provided by the application can meet the requirement of a larger dynamic range through the adjustment degree of the optical signal size of each sub-active region.

In a possible implementation manner, in the N sub-active regions, at least one of the sub-active regions is configured to perform absorption processing on an optical signal transmitted in an optical waveguide covered by a corresponding electrode.

In the semiconductor optical amplifier chip provided in this embodiment, part of the sub active regions perform amplification processing on the optical signal transmitted from the optical waveguide covered by the corresponding electrode, and part of the sub active regions perform absorption processing on the optical signal transmitted from the optical waveguide covered by the corresponding electrode. It should be noted that when the partial sub-active regions absorb the optical signal transmitted from the optical waveguide covered by the corresponding electrode, the optical signal transmitted from the optical waveguide can be attenuated to some extent, that is, can function as a variable optical attenuator. Therefore, the semiconductor optical amplifier chip provided by the embodiment can realize the function commonly realized by the variable optical attenuator and the semiconductor optical amplifier in the prior art, and compared with the prior art, the semiconductor optical amplifier chip provided by the embodiment has a smaller size, and can meet the requirement of an optical module on small size.

In one possible implementation manner, in the length direction of the optical waveguide, at least two of the N electrodes have different lengths. The implementation mode can enable the semiconductor optical amplifier chip to better meet the requirement of a larger dynamic range.

In a possible implementation manner, among the N electrodes, the sub-active region corresponding to the electrode with the longest length is used for performing amplification processing on an optical signal transmitted in a portion of the optical waveguide covered by the electrode with the longest length.

In a possible implementation manner, among the N electrodes, the sub-active region corresponding to the electrode with the shortest length is used for performing amplification processing or absorption processing on an optical signal transmitted in a portion of the optical waveguide covered by the electrode with the shortest length.

In one possible implementation manner, the sub-active region corresponding to each of the N electrodes except the electrode with the longest length is used for performing amplification processing or absorption processing on the optical signal transmitted in the portion of the optical waveguide covered by the corresponding electrode.

In one possible implementation, the electrode with the longest length is close to the exit end of the semiconductor optical amplifier chip.

A second aspect of the present application provides a light receiving subassembly comprising a first lens, a second lens and a semiconductor optical amplifier chip as described above in relation to the first aspect and any possible implementation thereof. The first lens is used for converging incident optical signals and coupling the converged optical signals to the semiconductor optical amplifier chip. The semiconductor optical amplifier chip is used for carrying out power regulation on the optical signal coupled from the first lens and coupling the optical signal after power regulation to the second lens; the second lens is used for converging the optical signal coupled from the semiconductor optical amplifier.

In this second aspect, the semiconductor amplifier chip integrated within the light receiving sub-assembly is any one of the semiconductor optical amplifier chips provided in the above first aspect. The semiconductor optical amplifier chip provided by the application can meet the requirement of a larger dynamic range through the adjustment degree of the optical signal size of each sub-active region.

Further, when part of the sub active regions of the semiconductor optical amplifier chip amplifies the optical signals transmitted from the corresponding optical waveguides, and part of the sub active regions absorbs the optical signals transmitted from the corresponding optical waveguides (for acting as optical attenuation), the semiconductor optical amplifier chip can achieve the effect achieved by cooperation of the two optical devices, namely the optical amplifier and the variable optical attenuator in the prior art. Since the semiconductor optical amplifier chip can also achieve the function of optical attenuation, a variable optical attenuator cannot be integrated, and therefore, compared with the prior art, the effect of reducing the size of an optical module can be achieved.

In a possible implementation manner, the light receiving subassembly further includes a light detector, the second lens is further configured to couple the converged light signal to the light detector, and the light detector is configured to convert the collected light signal into an electrical signal, so as to realize conversion of the optical-electrical signal.

In one possible implementation, the light receiving subassembly further includes: a circuit board for enabling electrical signal transmission between the plurality of components and an external control circuit.

In one possible implementation, the structures and/or materials in the N sub-active regions are identical. The implementation mode can simplify the process and reduce the cost.

In one possible implementation, the structures and/or materials in the N sub-active regions are not identical. In this implementation, the semiconductor optical amplifier has better performance.

In a possible implementation manner, the optical detector further comprises a transimpedance amplifier, wherein the transimpedance amplifier is used for amplifying the electric signal generated by the optical detector for signal detection.

In a possible implementation manner, the semiconductor optical amplifier further includes a carrier board, and the carrier board is used for carrying the semiconductor optical amplifier chip.

In a possible implementation manner, the optical plug further comprises an isolator, and the isolator is used for optically isolating an optical signal emitted from the optical plug so as to ensure unidirectional transmission of incident light.

In a possible implementation manner, the optical fiber connector further comprises an optical plug, and the optical plug is used for fixing the optical receiving sub-assembly with an external optical fiber ferrule.

In one possible implementation, the plurality of components further includes: and the optical demultiplexer is positioned between the second lens and the optical detector and is used for distinguishing incident optical signals according to different wavelengths, realizing wavelength demultiplexing and injecting the optical signals into the corresponding optical detector.

In one possible implementation, the optical demultiplexer is a free-space based demultiplexer structure or an optical demultiplexer structure based on an optical waveguide type structure. This implementation enables the light receiving sub-assembly to meet the requirements of the wavelength division multiplexing scenario.

In one possible implementation, the plurality of components further includes: and the semiconductor refrigerator is used for controlling the temperature of the semiconductor optical amplifier chip. The implementation mode can reduce the influence of higher temperature on the semiconductor optical amplifier chip.

In one possible implementation, the light receiving subassembly further includes: a light receiving subassembly package for providing a load bearing and hermetic enclosure for the plurality of components. The implementation mode can realize the airtight packaging of the internal components of the light receiving subassembly.

A third aspect of the present application provides an optical module comprising: and a light receiving subassembly as described in the second aspect and any possible implementation manner thereof, wherein one end of the control circuit is connected to the N electrodes located in the chip respectively, and is used for providing driving signals to the N electrodes respectively so as to drive the sub-active regions of the active region corresponding to each electrode to amplify or absorb the light signals.

A third aspect of the present application provides a light module including any one of the light receiving subassemblies provided in the second aspect. Because the semiconductor optical amplifier chip capable of meeting a large dynamic range is integrated in the ROSA, a variable optical attenuator chip is not required to be integrated at the receiving end of the optical module, so that the problem that the process for manufacturing the semiconductor optical amplifier chip and the variable optical attenuator chip is incompatible does not exist in the optical module, and the manufacturing cost of the receiving end of the optical module can be effectively reduced. Moreover, the semiconductor optical amplifier chip capable of meeting the requirement of a large dynamic range is integrated inside the ROSA, so that the small size, low cost and high performance of the ROSA can be guaranteed. Therefore, compared with the existing optical module structure (which adopts the discrete VOA + SOA and ROSA devices), the optical module provided by the application integrates the monolithic integrated SOA chip into the ROSA, and does not need to adopt the discrete VOA + SOA and ROSA device forms, so that the size and the cost of the optical module can be reduced, and the optical module can realize the packaging form of a QSFP28(Quad small form-factor plug, four-channel SPF interface) 28.

In a possible implementation manner, the other end of the control circuit is connected to the optical detector, and the control circuit is further configured to receive the report signal of each of the N electrodes and the report signal of the optical detector, and adjust the control circuit to issue the drive signals to the N electrodes respectively according to the received report signals.

In a possible implementation manner, the adjusting, by the control circuit, the driving signals respectively issued by the control circuit to the N electrodes according to the received report signal specifically includes: the control circuit searches a driving signal corresponding to the received reporting signal from a corresponding relation between the reporting signal and the driving signal which are configured in advance; and respectively sending the searched driving signals to the corresponding electrodes.

Compared with the prior art, the method has the following beneficial effects:

based on the above technical solution, the semiconductor optical amplifier chip provided by the present application includes an active region, an optical waveguide, and N electrodes electrically isolated from each other, which are sequentially located on a substrate. The active region comprises a plurality of sub-active regions, and the electrodes correspond to the sub-active regions one to one. In the plurality of sub-active regions, each sub-active region is configured to adjust a size of an optical signal transmitted in the optical waveguide covered by the corresponding electrode, and at least one sub-active region is configured to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode. Therefore, the semiconductor optical amplifier chip provided by the application can meet the requirement of a larger dynamic range through the adjustment degree of the optical signal size of each sub-active region.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1A to fig. 1D are schematic structural diagrams of a semiconductor optical amplifier chip including 2 sub-active regions and 2 electrodes according to an embodiment of the present application;

fig. 2 is a schematic structural diagram of a semiconductor optical amplifier chip including 3 sub-active regions and 3 electrodes according to an embodiment of the present disclosure;

fig. 3 is a schematic structural diagram of a light receiving subassembly provided in an embodiment of the present application;

fig. 4 is a schematic structural diagram of an optical module provided in the embodiment of the present application.

Detailed Description

Based on the background art, the existing semiconductor optical amplifier chip can not meet the requirement of a larger dynamic range.

In order to realize that the semiconductor optical amplifier chip has a larger dynamic range, the semiconductor optical amplifier chip provided by the application comprises an active region, an optical waveguide and N electrodes which are sequentially arranged on a substrate and are mutually electrically isolated. The active region comprises a plurality of sub-active regions, and the electrodes correspond to the sub-active regions one to one. In the plurality of sub-active regions, each sub-active region is configured to adjust a size of an optical signal transmitted in the optical waveguide covered by the corresponding electrode, and at least one sub-active region is configured to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode. Therefore, the semiconductor optical amplifier chip provided by the application can meet the requirement of a larger dynamic range through the adjustment degree of the optical signal size of each sub-active region.

In order to make the technical solutions better understood by those skilled in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.

Referring to fig. 1A to fig. 1D, fig. 1A is a schematic perspective view of a semiconductor optical amplifier chip including 2 sub-active regions and 2 electrodes according to an embodiment of the present disclosure, fig. 1B is a schematic cross-sectional view along a direction I-I in fig. 1A, fig. 1C is a schematic perspective view of another semiconductor optical amplifier chip including 2 sub-active regions and 2 electrodes according to an embodiment of the present disclosure, and fig. 1D is a schematic cross-sectional view along a direction I-I in fig. 1C.

In fig. 1A and 1B, the semiconductor optical amplifier chip includes: the optical waveguide device includes a substrate 11, an active region 12 located over the substrate 11, an optical waveguide 13 located over the active region 12, and a first electrode 141 and a second electrode 142 covering the optical waveguide 13 along a length direction of the optical waveguide 13.

Wherein the active region 12 includes a first sub-active region 121 and a second sub-active region 122. The first electrode 141 is electrically isolated from the second electrode 142. The longitudinal direction of the optical waveguide 13 is an extending direction of the optical waveguide 13 from the incident end of the semiconductor optical amplifier chip to the exit end of the semiconductor optical amplifier chip.

The first electrode 141 corresponds to the first sub-active region 121, and the first electrode 141 and the first sub-active region 121 have the same length. When the first electrode 141 projects in a direction perpendicular to the plane of the first active region 121, the projection is located within the first sub-active region 121.

The second electrode 142 corresponds to the second sub-active region 122, and the second electrode 142 and the second sub-active region 122 have the same length. When the second electrode 142 projects along a direction perpendicular to the plane of the second active region 122, the projection is located within the second sub-active region 122.

In the first sub-active region 121 and the second sub-active region 122, each sub-active region is configured to adjust a size of an optical signal transmitted in the optical waveguide covered by the corresponding electrode, and at least one sub-active region is configured to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode. As an example, the first sub-active region 121 is used to amplify an optical signal transmitted within an optical waveguide covered by the first electrode 141. The second sub-active region 122 is used for performing amplification processing or absorption processing on an optical signal transmitted in the optical waveguide covered by the second electrode 142.

As another embodiment of the present application, as shown in fig. 1C and 1D, in order to protect the first electrode 141, the second electrode 142 and the optical waveguide 13, the semiconductor optical amplifier chip may further include a first protective layer 151 covering the first electrode 141 and the optical waveguide under the first electrode 141, and a second protective layer 152 covering the second electrode 142 and the optical waveguide under the second electrode 142.

As an example, the first and second

protective layers

151 and 152 may be made of a silicon dioxide material.

As an example of the present application, in order to achieve electrical isolation between the first electrode 141 and the second electrode 142, a resistor may be provided in a gap between the first electrode 141 and the second electrode 142. In addition, the resistance of the resistor is high to achieve a good electrical isolation effect, and may be, for example, 10k Ω or more.

As another example of the present application, the first electrode 141 and the second electrode 142 may be made of a metal material. Accordingly, the first electrode 141 and the second electrode 142 are both metal electrodes.

As still another example of the present application, in order to simplify the process steps of the semiconductor optical amplifier and reduce the process cost thereof, the material and the structure of each sub-active region may be identical. Therefore, each sub-active region can be manufactured through a synchronous process, so that the process is simplified, and the cost is reduced.

In addition, as an extension of the embodiment of the application, in order to match different application scenarios, the internal materials in each sub-active region may not be completely the same, and the internal structures may also not be completely the same, so that the manufactured semiconductor optical amplifier has better performance.

In addition, it should be noted that the absorption and amplification amplitude of each sub-active region for light is related to the length thereof, and the absorption and amplification amplitude is larger when the length is longer, and the absorption and amplification amplitude is smaller when the length is shorter. Therefore, in order to satisfy the requirement of amplifying or absorbing incident light to different degrees, the lengths of the plurality of sub-active regions of the semiconductor optical amplifier chip may not be completely equal. In addition, when the incident light includes a plurality of lights with different wavelengths, in order to ensure that the semiconductor optical amplifier chip can absorb or amplify the lights with different wavelengths in the same amplitude, the semiconductor optical amplifier chip may include a plurality of sub-active regions with different lengths, and thus, it is also required that the lengths of the plurality of sub-active regions may not be completely equal.

In the present application, the length of the sub-active region is approximately equal to the length of the corresponding electrode, and the difference between the two is at most the length of the electrically isolated region. The length of the electrically isolated regions is typically only a few microns, so the length of the sub-active region and its corresponding electrode length can be considered equal.

Therefore, as an example of the present application, in order to better satisfy the requirement that the chip has a larger dynamic range, the lengths of the first electrode 141 and the second electrode 142 may be equal or different.

As a specific example, the length of the first electrode 141 is 20-100 μm, and the length of the second electrode 142 is 400-1500 μm. As a more specific example, in order to meet the specification requirements of 100G optical modules for 40km and 80km long-range application scenarios, the length of the first electrode 141 is 30 μm and the length 142 of the second electrode is 700 μm.

In order to match most application scenarios, the sub-active regions corresponding to the electrodes with the longest length can amplify optical signals, and the sub-active regions corresponding to the electrodes with the longest length are all in an on state no matter how large the power of incident light. The sub-active region corresponding to the electrode with the non-longest length can absorb or amplify the optical signal according to the requirement of a dynamic range and a loaded control signal (or bias voltage or bias current), and can be adjusted to be in an on state or an off state according to the power of incident light, and meanwhile, the gain of the on state or the attenuation of the off state can be adjusted through the size of the control signal.

In addition, as a specific example of the present application, among the plurality of electrodes having different lengths, the sub-active region corresponding to the electrode having the longest length is close to an exit end of the semiconductor optical amplifier chip, where the exit end is an end of the semiconductor optical amplifier chip farthest from the incident light.

In addition, the length of the sub-active regions cannot be too short due to the limitation of the existing manufacturing process, and in addition, when the sub-active regions are too short, the intended light absorption effect may not be achieved, and thus, the length of each sub-active region cannot be too short. In addition, the length of the sub-active region cannot be too long because the length is too long, resulting in a large optical noise. Thus, the length of the sub-active region within the semiconductor optical amplifier may be between 20-1500 microns.

As still another specific example of the present application, in order to simplify the process steps of the semiconductor optical amplifier chip and reduce the process cost thereof, the material and structure of each sub-active region may be identical except for the difference in length. Thus, the sub-active regions can be fabricated by a simultaneous process.

As still another specific example of the present application, in order to improve the adjusting capability of the semiconductor optical amplifier for the incident light power, each sub-active region may adopt a structure of an active region in a semiconductor laser. More specifically, the semiconductor laser structure may be a semiconductor laser structure based on a bulk material, a semiconductor laser structure based on a quantum well structure, or a semiconductor laser structure based on quantum dots.

In addition, in the embodiment of the present application, each electrode may control its corresponding sub-active region to be in different working states according to the received control signal, and the control signal may be a bias current or a bias voltage.

In order to clearly understand the working principle of the semiconductor optical amplifier chip provided in the embodiment of the present application, the working principle of the semiconductor optical amplifier chip including 2 sub-active regions and 2 electrodes is described as an example.

When the semiconductor optical amplifier chip operates, the first electrode 141 may control the first sub-active region 121 to be in different operating states according to receiving the first control signal; the second electrode 142 may control the second sub-active region 122 to be in different operation states according to the received second control signal.

It should be noted that in the embodiment of the present application, each sub-active region may be in two different operation states of being turned on and off. When the sub-active area is in an open state, the sub-active area is used for amplifying optical signals transmitted in the optical waveguide covered by the corresponding electrode, and the amplification gain can be adjusted by adjusting the size of the control signal; when the sub-active region is in a closed state, the sub-active region is used for absorbing optical signals transmitted in the optical waveguide covered by the corresponding electrode, and the attenuation can be adjusted by adjusting the size of the control signal.

As an example, the first sub active region 121 may be configured to absorb or amplify an optical signal transmitted in the optical waveguide covered by the corresponding electrode, and the second sub active region 122 may be configured to amplify an optical signal transmitted in the optical waveguide covered by the corresponding electrode, according to the magnitude of the optical signal power incident to the semiconductor optical amplifier chip.

As a more specific example, the operation state of each sub-active region when the power of the optical signal incident into the semiconductor optical amplifier chip is different will be described below.

When the incident light into the semiconductor optical amplifier chip is low power (for example, -24dBm to-14 dBm), the specific implementation of the operation state of each sub-active region is as follows:

the first electrode 141 controls the first sub-active region 121 to be in an on state according to a first control signal, and amplifies an optical signal transmitted in the optical waveguide covered by the first electrode 141; the first electrode 142 controls the second sub-active region 122 to be in an on state according to the second control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the first electrode 142. At the moment, each sub-active region of the semiconductor optical amplifier amplifies incident light, so that the optical power output by the semiconductor optical amplifier is not small, and the sensitivity performance of a subsequent optical detector is ensured to meet the requirement.

When the incident light into the semiconductor optical amplifier chip is of medium power (for example, -16dBm to-6 dBm), the operation state of each sub-active region can adopt the following two modes:

first embodiment

The first electrode 141 controls the first sub-active region 121 to be in an on state according to the first control signal, so that the first sub-active region 121 is in the on state, and the optical signal transmitted in the optical waveguide covered by the first electrode 141 is amplified to a certain extent, where compared with a control method of low-power incident light, a signal value of the first control signal (bias current or bias voltage) is smaller, so as to reduce a gain of the optical signal transmitted in the optical waveguide covered by the first electrode 141; the second electrode 142 controls the second sub-active region 122 to be in an on state according to the second control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the second electrode 142. At this moment, the semiconductor optical amplifier can amplify the incident light by the sub-active region in a lower degree and a higher degree, so that the incident light is amplified in a medium degree comprehensively, and the optical power received by the subsequent optical detector can be in a reasonable range (for example, -8dBm to +3 dBm).

Second embodiment

The first electrode 141 controls the first sub-active region 121 to be in an on state according to the first control signal, so that the first sub-active region 121 is in the on state, and the optical signal transmitted in the optical waveguide covered by the first electrode 141 is amplified to a certain extent, where compared with a control method of low-power incident light, a signal value of the first control signal (bias current or bias voltage) is smaller, so as to reduce a gain of the optical signal transmitted in the optical waveguide covered by the first electrode 141; the second electrode 142 controls the second sub-active region 122 to be in an on state according to the second control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the second electrode 142 to a certain extent, where it should be noted that compared with the control method of low-power incident light, the signal value of the second control signal (bias current or bias voltage) is smaller, so as to reduce the gain of the optical signal transmitted in the optical waveguide covered by the second electrode 142. At this moment, the semiconductor optical amplifier can sequentially amplify the incident light twice through the sub-active regions, so that the incident light is amplified in medium light power, and the light power received by the subsequent optical detector can be within a reasonable range (for example, -8dBm to +3 dBm).

When the incident light into the semiconductor optical amplifier chip is high power (for example, -8dBm to +5dBm), the specific implementation of the operation state of each sub-active region is as follows:

the first control signal turns off the first sub-active region 121, so that the first sub-active region 121 is in an off state, and attenuates an optical signal transmitted in the optical waveguide covered by the first electrode 141; the second electrode 142 controls the second sub-active region 122 to be in an on state according to the second control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the second electrode 142; at this time, the incident light may be amplified to a smaller degree, so that the optical power received by the subsequent photo-detector can be within a reasonable range (for example, -8dBm to +3 dBm).

The foregoing is a specific implementation manner of the semiconductor optical amplifier chip provided in the embodiment of the present application. In this specific implementation, two sub-active regions are included, and each sub-active region can be used to adjust the size of the optical signal transmitted in the optical waveguide covered by the corresponding electrode. Specifically, in the embodiment of the present application, the first sub-active region 121 and the second sub-active region 122 may adjust the size of the optical signal in the corresponding optical waveguide according to the size of the incident optical signal and the loaded control signal, so that the semiconductor optical amplifier chip can meet the requirement of a larger dynamic range.

In the above embodiment, it is described that the semiconductor optical amplifier chip includes two sub-active regions as an example, and actually, as an extension of the embodiment of the present application, in order to meet a requirement of a larger dynamic range, the semiconductor optical amplifier chip provided in the embodiment of the present application may also include three or more sub-active regions. As an example, a specific structure of a semiconductor optical amplifier chip including 3 sub-active regions is described below.

Please refer to fig. 2, which is a schematic structural diagram of a semiconductor optical amplifier chip including 3 sub-active regions and 3 electrodes according to an embodiment of the present application.

In fig. 2, the semiconductor optical amplifier chip includes a substrate 11, an active region 12 located above the substrate 11, an optical waveguide 13 located above the active region 12, and a first electrode 141, a second electrode 142, and a third electrode 143 covering the optical waveguide 13 along a length direction of the optical waveguide 13.

Wherein the active region 12 includes a first sub-active region 121, a second sub-active region 122, and a third sub-active region 123. The first electrode 141 is electrically isolated from the second electrode 142, and the second electrode 142 is electrically isolated from the third electrode 143. Specifically, the longitudinal direction of the optical waveguide 13 is an extending direction of the optical waveguide 13 from the incident end of the semiconductor optical amplifier chip to the exit end of the semiconductor optical amplifier chip.

The first electrode 141 corresponds to the first sub-active region 121. When the first electrode 141 projects in a direction perpendicular to the plane of the first active region 121, the projection is located within the first sub-active region 121.

The second electrode 142 corresponds to the second sub-active region 122. When the second electrode 142 projects along a direction perpendicular to the plane of the second active region 122, the projection is located within the second sub-active region 122.

The third electrode 143 corresponds to the third sub-active region 123. When the third electrode 143 projects in a direction perpendicular to the plane of the third active region 123, the projection is located within the third sub-active region 123.

In the first sub-active region 121, the second sub-active region 122, and the third sub-active region 123, each of the sub-active regions is configured to adjust a size of an optical signal transmitted in the optical waveguide covered by the corresponding electrode, and at least one of the sub-active regions is configured to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode.

In order to further clearly understand the working principle of the semiconductor optical amplifier chip provided in the embodiment of the present application, the working principle of the semiconductor optical amplifier chip including 3 sub-active regions and 3 electrodes is further described below as an example.

When the semiconductor optical amplifier chip operates, the first electrode 141 may control the first sub-active region 121 to be in different operating states according to receiving the first control signal; the second electrode 142 may control the second sub-active region 122 to be in different operation states according to the received second control signal. The third electrode 143 may control the third sub-active region 123 to be in different operation states according to the received third control signal.

As an example, according to the power of the optical signal incident to the semiconductor optical amplifier chip, the first sub-active region 121 and the second sub-active region 122 may be respectively configured to absorb or amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode, and the third sub-active region 123 may be configured to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode.

Specific example 1

When the incident light into the semiconductor optical amplifier chip is low power (for example, -24dBm to-14 dBm), the first electrode 141 controls the first sub-active region 121 to be in an on state according to the first control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the first electrode 141; the second electrode 142 controls the second sub-active region 122 to be in an on state according to the second control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the second electrode 142; the third electrode 143 controls the third sub-active region 123 to be in an on state according to a third control signal, and amplifies an optical signal transmitted in the optical waveguide covered by the third electrode 143; at the moment, each sub-active region of the semiconductor optical amplifier amplifies incident light, so that the optical power output by the semiconductor optical amplifier is not small, and the sensitivity performance of a subsequent optical detector is ensured to meet the requirement.

When the incident light entering the semiconductor optical amplifier chip has medium power (for example, -16dBm to-6 dBm), the first control signal turns off the first sub-active region 121, so that the first sub-active region 121 is in a turned-off state, and the optical signal transmitted in the optical waveguide covered by the first electrode 141 is attenuated to a certain degree; the second electrode 142 controls the second sub-active region 122 to be in an on state according to the second control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the second electrode 142; the third electrode 143 controls the third sub-active region 123 to be in an on state according to a third control signal, and amplifies an optical signal transmitted in the optical waveguide covered by the third electrode 143; at this time, the semiconductor optical amplifier may amplify the incident light with a medium optical power, so that the optical power received by the subsequent optical detector can be within a reasonable range (for example, -8dBm to +3 dBm).

When the incident light entering the semiconductor optical amplifier chip is high power (for example, -8dBm to +5dBm), the first control signal turns off the first sub-active region 121, so that the first sub-active region 121 is in an absorption state, and the optical signal transmitted in the optical waveguide covered by the first electrode 141 is attenuated; the second electrode 142 controls the second sub-active region 122 to be in an off state according to the second control signal, and attenuates the optical signal transmitted in the optical waveguide covered by the second electrode 142; the third electrode 143 controls the third sub-active region 123 to be in an on state according to a third control signal, and amplifies an optical signal transmitted in the optical waveguide covered by the third electrode 143; at this time, the incident light may be amplified to a smaller degree, so that the optical power received by the subsequent photo-detector can be within a reasonable range (for example, -8dBm to +3 dBm).

Specific example 2

When the incident light entering the semiconductor optical amplifier chip has medium power (for example, -16dBm to-6 dBm), the first electrode 141 controls the first sub-active region 121 to be in an on state according to the first control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the first electrode 141; the second electrode 142 controls the second sub-active region 122 to be in an on state according to the second control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the second electrode 142; the third electrode 143 controls the third sub-active region 123 according to a third control signal, which is to be noted that, compared with the control method of low-power incident light, the signal value of the third control signal (bias current or bias voltage) is smaller, so as to reduce the gain of the optical signal transmitted in the optical waveguide covered by the third electrode 143; at this time, the semiconductor optical amplifier may amplify the incident light with a medium optical power, so that the optical power received by the subsequent optical detector can be within a reasonable range (for example, -8dBm to +3 dBm).

When the incident light entering the semiconductor optical amplifier chip is high power (for example, -8dBm to +5dBm), the first electrode 141 controls the first sub-active region 121 to be in an on state according to the first control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the first electrode 141; the second electrode 142 controls the second sub-active region 122 according to a second control signal, which is to be noted that, compared with the control method of low-power incident light, the signal value of the second control signal (bias current or bias voltage) is smaller, so as to reduce the gain of the optical signal transmitted in the optical waveguide covered by the first electrode 142; the third electrode 143 controls the third sub-active region 123 according to a third control signal, which is smaller in signal value (bias current or bias voltage) than the control method of the incident light with low power or medium power; at this moment, the semiconductor optical amplifier can perform small gain of optical power and even attenuation on incident light; at this time, the incident light may be amplified to a smaller degree, so that the light power received by the subsequent light detector can be within a reasonable range (for example, -8dBm to +5 dBm).

Specific example III

When the incident light into the semiconductor optical amplifier chip is high power (for example, -8dBm to +5dBm), the first electrode 141 controls the first sub-active region 121 according to a first control signal, and the signal value of the first control signal is reduced compared to the control mode of the small power or medium power incident light; the second electrode 142 controls the second sub-active region 122 to be in an on state according to the second control signal, and amplifies the optical signal transmitted in the optical waveguide covered by the corresponding electrode; the third electrode 143 will control the third sub-active region 123 according to a third control signal, and the signal value of the third control signal is always at a smaller value compared to the control manner of the small-power or medium-power incident light; at the moment, the semiconductor optical amplifier can amplify and even attenuate the incident light with small optical power; at this time, the incident light may be amplified to a smaller degree, so that the light power received by the subsequent light detector can be within a reasonable range (for example, -8dBm to +5 dBm).

The foregoing is a specific implementation manner of another semiconductor optical amplifier chip provided in this embodiment of the present application. In this particular implementation, three sub-active regions are included. Therefore, the semiconductor optical amplifier chip shown in fig. 2 can more easily satisfy the requirement of a larger dynamic range than the semiconductor optical amplifier chip shown in fig. 1.

In the above embodiments, the semiconductor optical amplifier chip including two or three sub-active regions is described as an example. In fact, as an extension of the embodiment of the present application, the semiconductor optical amplifier chip provided in the embodiment of the present application can meet the requirement of a larger dynamic range as long as the chip includes two or more sub active regions. Specifically, the number of the sub-active regions included in the semiconductor optical amplifier chip provided by the embodiment of the present application may be 2, 3, 4, or other integer values.

Based on the semiconductor Optical amplifier chip provided above, the embodiment of the present application further provides a Receiver Optical Subassembly (ROSA), which will be explained and explained below with reference to the drawings.

Referring to fig. 3, the figure is a schematic structural diagram of a light receiving subassembly provided in an embodiment of the present application.

The ROSA provided in the embodiment of the present application includes: a plurality of components including an optical plug 302, an isolator 303, a first lens 304, a semiconductor optical Amplifier chip 305, a carrier board 306, a second lens 307, a photodetector 308, and a Transimpedance Amplifier (TIA) 309, and a circuit board 301.

And a circuit board 301 for implementing electrical signal transmission between the plurality of components and an external control circuit. In the embodiment of the present application, the Circuit board 301 may be a common PCB or a Flexible Printed Circuit (FPC). Because the thickness and the weight of the flexible circuit board are smaller, the flexible circuit board has bendability and good vibration and impact resistance, the weight and the thickness of a product containing ROSA can be reduced by adopting the FPC board, and the product has the bendability.

In addition, the circuit board 301 may be connected to an external control circuit via pins or other connection means.

And an optical plug 302 for fixing the optical receiving subassembly with an external optical fiber ferrule.

And a first lens 304 for converging the optical signal incident from the optical fiber ferrule and coupling the converged optical signal into the semiconductor optical amplifier chip 305.

And an isolator 303 for optically isolating the optical signal emitted from the optical plug 302 to ensure unidirectional transmission of the incident light.

A semiconductor optical amplifier chip 305 for power conditioning the optical signal coupled in from the first lens 304. Also, the semiconductor optical amplifier chip 305 may be any one of the semiconductor optical amplifier chips provided in the above-described embodiments.

And a carrier board 306 for carrying the semiconductor optical amplifier chip 305.

And a second lens 307 for converging the optical signal emitted from the semiconductor optical amplifier chip 305 and coupling to the optical detector 308.

And the optical detector 308 is configured to convert the collected optical signal into an electrical signal, so as to implement conversion of the optical signal and the electrical signal.

And a transimpedance amplifier 309 for amplifying the electrical signal generated by the optical detector 308 for signal detection.

As an alternative embodiment of the present application, when the semiconductor optical amplifier chip 305 supports a cooling operation, in order to reduce an influence of a higher temperature on the semiconductor optical amplifier chip 305, in the ROSA provided in the embodiment of the present application, the plurality of component parts may further include:

a semiconductor Cooler (TEC) 310 for temperature control of the semiconductor optical amplifier chip 305.

It should be noted that semiconductor cooler 310 is not an essential component of a ROSA. If the temperature variation will affect the normal operation of the semiconductor optical amplifier chip 305 (including the performance of gain and noise), the semiconductor refrigerator 310 is required to be installed in the ROSA; if the temperature variation does not affect the normal operation of the semiconductor optical amplifier chip 305, the semiconductor refrigerator 310 does not need to be installed in the ROSA.

As another optional embodiment of the present application, in order to enable the ROSA to meet the requirement of the wavelength division multiplexing scenario, in the ROSA provided in the embodiment of the present application, the multiple components may further include:

an Optical Demultiplexer (ODMUX) 311 is located between the second lens 307 and the photodetectors 308, and is configured to distinguish the incident Optical signals according to different wavelengths, implement wavelength demultiplexing, and inject the Optical signals into the corresponding photodetectors 308. The optical demultiplexer 311 may have a free-space demultiplexer structure or an optical waveguide type optical demultiplexer structure.

The optical demultiplexer 311 is also not an essential component of the ROSA. If the ROSA is applied to a wavelength division multiplexing scenario, the ROSA needs to be equipped with an optical demultiplexer 311; if the ROSA is applied to a single wavelength scene, the ROSA does not need to be equipped with the optical demultiplexer 311.

As another alternative embodiment of the present application, in order to implement the load-bearing and airtight package of the ROSA, in the ROSA provided in the embodiment of the present application, the plurality of components may further include:

a ROSA housing 312 to provide a load bearing and hermetic enclosure for the various components described above.

The ROSA cartridge 312 is also not an essential component of a ROSA. If the ROSA does not need to be load bearing and hermetically sealed, the ROSA may not include a ROSA can 312; the ROSA can include a ROSA cartridge 312 if the ROSA is to be carried and hermetically sealed.

The foregoing is a specific implementation of the ROSA provided in the embodiments of the present application, and in this specific implementation, the semiconductor amplifier chip 305 integrated in the ROSA is any one of the semiconductor amplifier chips provided in the embodiments described above. The semiconductor optical amplifier chip 305 provided by the present application can meet the requirement of a large dynamic range by adjusting the optical signal size of each sub-active region. Therefore, in the ROSA integrated with the semiconductor optical amplifier chip 305 provided by the present application, in order to meet the requirement of a larger dynamic range, it is not necessary to integrate the semiconductor optical amplifier chip and the variable optical attenuation chip at the same time. Therefore, the size of the ROSA provided by the present application is smaller than that of the ROSA in the related art, and a ROSA of a miniaturized size is realized.

In addition, because the semiconductor optical amplifier chip capable of meeting a large dynamic range is integrated in the ROSA, a receiving end of an optical module comprising the ROSA does not need to integrate a variable optical attenuation chip, and therefore the receiving end of the optical module does not need to adopt a separate SOA and VOA device, the problem that the processes for manufacturing the SOA and the VOA are incompatible does not exist, and the manufacturing cost of the receiving end of the optical module can be effectively reduced.

Furthermore, the semiconductor optical amplifier chip 305 according to the present application can satisfy a wide dynamic range, and therefore, the gain of the semiconductor optical amplifier chip 305 can be dynamically adjusted according to the power of incident light, and the ROSA into which the semiconductor optical amplifier chip 305 is integrated can realize both a large dynamic range and miniaturization of the ROSA, thereby finally realizing miniaturization of an optical module, and enabling the optical module to realize a package form of QSFP 28.

Based on the ROSA provided by the above embodiments, the embodiments of the present application further provide an optical module, which will be explained and explained below with reference to the drawings.

Referring to fig. 4, the figure is a schematic structural diagram of an optical module provided in the embodiment of the present application.

The optical module provided by the embodiment of the application comprises: the optical amplifier comprises a control circuit 401 and a light receiving subassembly 402, wherein one end of the control circuit 401 is respectively connected with N electrodes of a semiconductor optical amplifier chip of the light receiving subassembly 402 and is used for respectively providing driving signals for the N electrodes so as to drive a sub-active region of an active region corresponding to each electrode to amplify or absorb optical signals.

As another embodiment, in order to perform reasonable gain or attenuation on different incident lights, the control circuit 401 may adjust the driving signal according to the reported signal related to the incident light provided by the light receiving subassembly 402, and send the adjusted driving signal to the light receiving subassembly 402.

The reporting signal related to the incident light provided by the light receiving subassembly 402 may be a reporting signal sent by each electrode of a semiconductor optical amplifier chip in the light receiving subassembly 402, a reporting signal sent by an optical detector in the light receiving subassembly 402, or a reporting signal obtained by integrating the reporting signal sent by each electrode of the semiconductor optical amplifier chip in the light receiving subassembly 402 and the reporting signal sent by the optical detector.

As an example, one end of the control circuit 401 of the optical module is connected to N electrodes of the semiconductor optical amplifier chip of the optical receiving subassembly 402, and the other end is connected to the optical detector, at this time, the control circuit 401 is further configured to receive a report signal of each electrode of the N electrodes and a report signal of the optical detector, and adjust the drive signals respectively issued by the control circuit 401 to the N electrodes according to the received report signals.

The adjusting, by the control circuit 401, the driving signals respectively issued by the control circuit to the N electrodes according to the received report signal may specifically include:

the control circuit 401 searches for a driving signal corresponding to the received reporting signal from a pre-configured corresponding relationship between the reporting signal and the driving signal;

and respectively sending the searched driving signals to the corresponding electrodes.

It should be noted that, in order to protect the semiconductor optical amplifier chip, the sub-active region capable of amplifying and absorbing light inside the semiconductor optical amplifier chip is initially set to an off state, so that the sub-active region absorbs incident light and generates a certain attenuation effect on the incident light, and thus, the risk that the semiconductor optical amplifier chip is damaged when high-power light is incident can be reduced.

For convenience of explanation and explanation, the working principle of the control circuit in the optical module controlling according to different reported signals will be described in detail below in sequence by taking a semiconductor optical amplifier chip including 3 sub-active regions and 3 electrodes as an example.

The working principle that the control circuit 401 controls according to the reported signal sent by each electrode of the semiconductor optical amplifier chip in the optical receiving subassembly 402 may specifically be:

incident light enters the semiconductor optical amplifier chip, the electrode corresponding to each sub-active region in the semiconductor optical amplifier chip generates a first reporting signal according to the incident light, and then the first reporting signal is transmitted to the external control circuit 401.

Then, the control circuit 401 searches for the first driving signal corresponding to the received reporting signal from the pre-configured corresponding relationship between the reporting signal and the driving signal according to the first reporting signal, and issues the searched first driving signal to the corresponding electrode respectively.

And finally, each electrode controls the working state of the corresponding sub-active region according to the corresponding driving signal.

The working principle of the control circuit 401 according to the report signal sent by the optical detector may specifically be:

incident light enters the semiconductor optical amplifier chip, and the semiconductor optical amplifier chip gains or attenuates the incident light and outputs a first photocurrent.

Then, the first photocurrent output from the semiconductor optical amplifier chip is converted into an optical signal through photoelectric conversion, and is transmitted to the optical detector, and the optical detector also generates a second reported signal corresponding to the optical signal incident into the optical detector, and then the second reported signal is amplified by the transimpedance amplifier and transmitted to the external control circuit 401 through the FPC board.

Next, the control circuit 401 searches for a second driving signal corresponding to the received reporting signal from a pre-configured corresponding relationship between the reporting signal and the driving signal according to the second reporting signal, and issues the searched second driving signal to the corresponding electrodes respectively.

Then, each electrode controls the working state of the corresponding sub-active region according to the corresponding driving signal.

The working principle that the control circuit 401 controls according to the report signal sent by each electrode of the semiconductor optical amplifier chip in the optical receiving subassembly 402 and the report signal sent by the optical detector may specifically be:

incident light enters the semiconductor optical amplifier chip, the semiconductor optical amplifier chip gains or attenuates the incident light and outputs a first photocurrent, and in the process, the electrode corresponding to each sub-active region of the semiconductor optical amplifier chip also transmits a first reporting signal generated according to the incident light to the external control circuit 401.

Next, the control circuit 401 searches for a third driving signal corresponding to the received reporting signal from the pre-configured corresponding relationship between the reporting signal and the driving signal according to the first reporting signal and the second reporting signal, and issues the searched third driving signal to the corresponding electrode respectively.

The foregoing is a specific implementation of the optical module provided in the embodiments of the present application, and in this specific implementation, the optical module includes any ROSA provided in the foregoing embodiments. Because the semiconductor optical amplifier chip capable of meeting a large dynamic range is integrated in the ROSA, a variable optical attenuator chip is not required to be integrated at the receiving end of the optical module, so that the problem that the process for manufacturing the semiconductor optical amplifier chip and the variable optical attenuator chip is incompatible does not exist in the optical module, and the manufacturing cost of the receiving end of the optical module can be effectively reduced.

Moreover, the semiconductor optical amplifier chip capable of meeting the requirement of a large dynamic range is integrated inside the ROSA, so that the small size, low cost and high performance of the ROSA can be guaranteed. Therefore, compared with the existing optical module structure (which adopts the discrete VOA + SOA and ROSA devices), the optical module provided by the application integrates the monolithic integrated SOA chip into the ROSA, and does not need to adopt the discrete VOA + SOA and ROSA device forms, so that the size and the cost of the optical module can be reduced, and the optical module can realize the packaging form of a QSFP28(Quad small form-factor plug, four-channel SPF interface) 28.

It should be noted that the optical module provided in the embodiments of the present application may be an optical module with various speeds and various distances. Such as a 100G optical module, a 40G optical module, and so on.

It should be noted that, as an extension of the embodiment of the present application, the semiconductor optical amplifier chip provided in the present application may be used not only in the ROSA of the optical receiving terminal, but also in the optical transmission subassembly of the optical transmitting terminal, and the optical output power of the optical transmission subassembly is controlled by controlling the operating state of each segment of the SOA segment.

In addition, the SOA chip structure and the control mode can also be applied to a laser chip of an optical transmitting end and integrated into the laser chip in a monolithic integration mode.

The above provides a specific implementation manner for the embodiment of the present application.

Claims

1. A semiconductor optical amplifier chip, comprising:

a substrate;

an active region on the substrate; the active region comprises N sub-active regions; n is an integer greater than or equal to 2;

an optical waveguide located on the active region, the optical waveguide extending from an incident end of the semiconductor optical amplifier chip to an exit end of the semiconductor optical amplifier chip;

and N electrodes covering the optical waveguide along a length direction of the optical waveguide; the two adjacent electrodes are electrically isolated, and the length direction of the optical waveguide is the extending direction of the optical waveguide from the incident end of the semiconductor optical amplifier chip to the emergent end of the semiconductor optical amplifier chip;

the N electrodes are in one-to-one correspondence with the N sub-active regions, and along a direction perpendicular to the active regions, the projection of each electrode in the active regions is located in the corresponding sub-active region;

in the N sub-active regions, each sub-active region is configured to adjust a size of an optical signal transmitted in the optical waveguide covered by the corresponding electrode, where at least one sub-active region is configured to amplify the optical signal transmitted in the optical waveguide covered by the corresponding electrode;

each sub-active area has two working states of opening and closing, when the sub-active area is in the opening state, the sub-active area is used for amplifying optical signals transmitted in the optical waveguide covered by the corresponding electrode, and when the sub-active area is in the closing state, the sub-active area is used for absorbing the optical signals transmitted in the optical waveguide covered by the corresponding electrode.

2. The chip of claim 1, wherein at least one of the N sub-active regions is configured to absorb an optical signal transmitted in an optical waveguide covered by a corresponding electrode.

3. The chip of claim 1, wherein at least two of the N electrodes have different lengths along the length of the optical waveguide.

4. The chip of claim 3, wherein the sub-active region corresponding to the electrode with the longest length among the N electrodes is configured to amplify the optical signal transmitted in the portion of the optical waveguide covered by the electrode with the longest length.

5. The chip according to claim 4, wherein the sub-active region corresponding to the shortest electrode among the N electrodes is configured to perform amplification or absorption processing on the optical signal transmitted in the portion of the optical waveguide covered by the shortest electrode.

6. The chip of claim 4, wherein the sub-active region corresponding to each of the N electrodes except the electrode with the longest length is used for performing amplification or absorption processing on the optical signal transmitted in the portion of the optical waveguide covered by the corresponding electrode.

7. The chip of claim 4, wherein the electrode with the longest length is near the exit end of the semiconductor optical amplifier chip.

8. A light receiving sub-assembly comprising a first lens, a second lens and a semiconductor optical amplifier chip as claimed in any one of claims 1 to 7;

the first lens is used for converging incident optical signals and coupling the converged optical signals to the semiconductor optical amplifier chip;

the semiconductor optical amplifier chip is used for carrying out power regulation on the optical signal coupled from the first lens and coupling the optical signal after power regulation to the second lens;

the second lens is used for converging the optical signal coupled from the semiconductor optical amplifier.

9. The light-receiving subassembly of claim 8, further comprising a light detector, wherein the second lens is further configured to couple the collected light signal to the light detector, and wherein the light detector is configured to convert the collected light signal into an electrical signal to achieve conversion of the optical signal into an electrical signal.

10. The light receiving sub-assembly of claim 8 or 9, further comprising: a circuit board for enabling electrical signal transmission between the plurality of components and an external control circuit.

11. A light module, comprising: a control circuit and the light receiving subassembly as claimed in any one of claims 8-10, wherein one end of the control circuit is connected to N electrodes located in the chip respectively, and is used for providing driving signals to the N electrodes respectively so as to drive the sub-active regions of the active region corresponding to each electrode to amplify or absorb the optical signals.

12. The optical module of claim 11, wherein the other end of the control circuit is connected to a photodetector, and the control circuit is further configured to receive a report signal of each of the N electrodes and a report signal of the photodetector, and adjust the driving signals respectively issued by the control circuit to the N electrodes according to the received report signals.

13. The optical module of claim 12, wherein the control circuit adjusts the driving signals respectively issued by the control circuit to the N electrodes according to the received report signal, and specifically includes:

the control circuit searches a driving signal corresponding to the received reporting signal from a corresponding relation between the reporting signal and the driving signal which are configured in advance;