CN110164975A - A kind of accumulation type silicon carbide power MOSFET element - Google Patents
A kind of accumulation type silicon carbide power MOSFET element Download PDFInfo
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- 238000009825 accumulation Methods 0.000 title claims abstract description 72
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims description 26
- 239000002019 doping agent Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000010276 construction Methods 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 abstract description 11
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000011982 device technology Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000005465 channeling Effects 0.000 description 7
- 238000002513 implantation Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
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- 230000004075 alteration Effects 0.000 description 1
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Abstract
The present invention relates to semiconductor power device technology fields, more particularly to silicon carbide power semiconductor devices, specially a kind of accumulation type silicon carbide power MOSFET element, with forward blocking ability, using technologies such as accumulation type electron channel and charge compensations, channel carrier (electronics) mobility can be improved, reduce the channel resistance and drift zone resistance of device, the featured resistance of device can be reduced, optimised devices are pressure-resistant and than the trade-off relation between conducting resistance.Compared with the device of traditional inversion-layer channel, device of the present invention has lower conducting resistance and conduction voltage drop, therefore has broad application prospects.
Description
Technical field
The present invention relates to semiconductor power device technology field more particularly to silicon carbide power semiconductor devices, specially
A kind of accumulation type silicon carbide power MOSFET element.
Background technique
Carbofrax material has biggish forbidden bandwidth, higher carrier saturation rate and larger compared with silicon materials
The good characteristics such as thermal conductivity, therefore far super silicon materials of power electronic devices performance made using carbofrax material.Meanwhile carbon
Silicon nitride material is the compound semiconductor and wide bandgap semiconductor for the silicon dioxide insulating layer that can be uniquely formed by thermal oxide,
This makes power MOSFET (Metal oxide semiconductor field effect for carbofrax material
Transistor) device brings great convenience, while also increasing advantage for the development of silicon carbide power MOSFET element.
Although silicon carbide device there are many good characteristics, still there are some shortcomings, a main limitation is that channel moves
The compromise of shifting rate and threshold voltage, channel mobility is low, surface trap density is high and worse surface texture properties, these are all
The commercial applications for resulting in silicon carbide power MOSFET element become difficult；And ratio can be obtained using the design of accumulation type channel
Inversion-layer channel designs better performance.
Accumulation type MOSFET replaces the inversion-layer channel in traditional devices using accumulation type channel, to electron conductive type device
For, compared with the device of traditional inversion-layer electrons channel, channel current-carrying can be improved using the device of accumulation type electron channel
Sub (electronics) mobility, reduces the channel resistance of device, it can reduce the featured resistance of device, while device threshold voltage
It can reduce.It can preferably be rolled between channel mobility and threshold voltage using accumulation type silicon carbide power MOSFET element structure
In；Compared with the device of traditional inversion-layer electrons channel, accumulation type silicon carbide power MOSFET element is in acceptable threshold value electricity
It is higher to depress its channel mobility, there is lower conducting resistance and conduction voltage drop, therefore have broad application prospects.
Summary of the invention
The purpose of the present invention is to provide a kind of accumulation type silicon carbide power MOSFET elements, have forward blocking ability,
Using technologies such as accumulation type channel and charge compensations, higher channel mobility and lower conducting resistance are obtained.
For achieving the above object, The technical solution adopted by the invention is as follows:
A kind of accumulation type silicon carbide power MOSFET element, including be cascading from bottom to top metalized drain 1,
N-type drift region 3, metallizing source 12, wherein
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: the drain region N+ 2, the drain region N+ 2
Ohmic contact is formed with the upper surface of metalized drain 1；
The upper surface of the N-type drift region 3 is Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type source region 6, the
One N-type region 7, p type buried layer 8,9 area JiPXing Zhu 13 of groove；The groove 9 is opened in the side of 3 upper surface of N-type drift region, groove
9 inside are filled with insulating layer 11, and have gate electrode 10 in insulating layer 11, and the lower surface depth of the gate electrode 10 is greater than p-type
The junction depth in body area 4；The p type buried layer 8 is located at immediately below groove 9 and directly contacts with groove 9；The area PXing Ti 4 is located at
The top of N-type drift region 3, the p-type contact zone 5 is adjacent with N-type source region 6 and is respectively positioned on the top in the area PXing Ti 4, the P
The upper surface and metallizing source 12 of type contact zone 5 and N-type source region 6 are respectively formed Ohmic contact；First N-type region 7 is located at p-type
Between body area 4 and groove 9, upper surface is N-type source region 6, its lower surface is identical as the lower surface depth in the area PXing Ti 4；The P
The area Xing Zhu 13 is located at the lower surface in the area PXing Ti 4, and the width in the area QiePXing Zhu 13 is less than or equal to the width in the area PXing Ti 4, p-type column
13 depth of area is less than or equal to the depth of N-type drift region 3.
A kind of accumulation type silicon carbide power MOSFET element, including be cascading from bottom to top metalized drain 1,
N-type drift region 3, metallizing source 12, wherein
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: the drain region N+ 2, the drain region N+ 2
Ohmic contact is formed with the upper surface of metalized drain 1；
The upper surface of the N-type drift region 3 is Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type source region 6, the
One N-type region 7, p type buried layer 8 and groove 9；The groove 9 is opened in the side of 3 upper surface of N-type drift region, fills inside groove 9
There is insulating layer 11, and there is gate electrode 10 in insulating layer 11, the lower surface depth of the gate electrode 10 is greater than the knot in the area PXing Ti 4
It is deep；The p type buried layer 8 is located at immediately below groove 9 and directly contacts with groove 9；The metallizing source 12 is bathtub construction,
P-type contact zone 5 that lower surface is successively abutted, the area PXing Ti 4, N-type source region 6 surround and direct formation Ohmic contact, wherein p-type
Contact zone 5 is located at left side and lower surface and the area PXing Ti 4 be in same plane, N-type source region 6 be located at right side and N-type source region 6 and
Groove 10 directly contacts；For first N-type region 7 between the area PXing Ti 4 and groove 9, upper surface is N-type source region 6, under it
Surface is identical as the lower surface depth in the area PXing Ti 4.
Further, the Facad structure further includes the second N-type region 14, and second N-type region 14 is located at the first N-type region 7
Lower section and its doping concentration be greater than the first N zone type 7 and N-type drift region 3, with the conducting resistance of further low device.
Further, in order to further decrease channel resistance, above structure can also be improved as follows, by source electrode (S)
It is changed to connect N-type source region 6, and forms Ohmic contact with N-type source region 6, and the area PXing Ti 4 and p-type contact zone 5 are connect with electrode G2,
And form Ohmic contact.
Further, the Facad structure further includes the area PXing Zhu 13, and the area PXing Zhu 13 is located at p-type contact zone 5 and p-type
The lower section in body area 4, the width in the area QiePXing Zhu 13 are less than or equal to the overall width of p-type contact zone 5 and the area PXing Ti 4, the area PXing Zhu 13
Depth is less than or equal to the depth of N-type drift region 3.
Further, buried gate electrode 15 is additionally provided in the insulating layer 11, the buried gate electrode 15 corresponds to p type buried layer
8 top, the buried gate electrode 15 are shorted with metallizing source 12 in the structure and keep same potential or external other current potentials.
A kind of accumulation type silicon carbide power MOSFET element, comprising:
N-type substrate 18,
N-type drift region 3 is provided in the N-type substrate 18, the right side of the N-type drift region 3 is provided with P type trap zone 17,
The left side of the N-type drift region 3 is provided with N-type drain region 2, and the top of the N-type drift region 3 is provided with P-doped zone 16 and P
Type doped region 16 is not contacted with N-type drain region 2；
17 upper surface of P type trap zone is provided with adjacent p-type contact zone 5 and N-type source region 6, the p-type contact zone 5
Metallizing source 12 is set with 6 upper surface of N-type source region and forms Ohmic contact；
Device surface is equipped with groove 9, is filled with insulating layer 11 in groove 9, and gate electrode 10 is provided in insulating layer 11；Institute
State that 9 left surface of groove is directly contacted with P-doped zone 16, right surface is directly contacted with N-type source region 6；
Be provided with the first N-type region 7 between 9 lower surface of groove and P type trap zone 17, the right surface of first N-type region 7 with
N-type source region 6 directly contact, left surface and P type trap zone 17 are in same plane；
2 upper surface of N-type drain region is provided with metalized drain 1；
16 depth of P-doped zone is no more than 9 depth of groove.
Further, p type buried layer 19, the right surface of the p type buried layer 19 and P type trap zone are also set up in the N-type drift region 3
17 directly contact, and left surface and P-doped zone 16 are in same plane, and lower surface and P type trap zone 17 are in same plane, thickness
Less than P type trap zone 17, so that the thickness of the N-type drift region 3 is greater than the thickness of N-type region 7.
Further, the N-type substrate 18 replaces with P type substrate 20, and sets in 20 lower surface of P type substrate (bottom device)
Set metallizing source 12.
A kind of accumulation type silicon carbide power MOSFET element, comprising:
Substrate 21,
It is provided with P type trap zone 17 on the substrate 21, is provided with N-type drift region 3 in the P type trap zone 17；
The left side of the N-type drift region 3 is provided with N-type drain region 2, and the top of the N-type drift region 3 is provided with p-type doping
Area 16 and P-doped zone 16 is not contacted with N-type drain region 2；
Device surface is equipped with groove 9, is filled with insulating layer 11 in groove 9, and gate electrode 10 is provided in insulating layer 11；Institute
It states 9 left side of groove directly to contact with P-doped zone 16, N-type source region 6 and 6 lower surface of N-type source region is provided on the right side of the groove 9
It is generally aligned in the same plane with groove 9, it is adjacent on the right side of N-type source region 6 to have p-type contact zone 5 and 5 lower surface of p-type contact zone and P type trap zone
17 are in contact；The first N-type region 7 is provided between the groove 9 and p-type contact zone 5 and P type trap zone 17；
2 upper surface of N-type drain region is provided with metalized drain 1；
16 depth of P-doped zone is no more than 9 depth of groove.
Further, the P-doped zone 16 and/or p type buried layer 17 are arranged to varying doping area, from left to right dopant dose
It is stepped up.
The invention has the benefit that the present invention provides a kind of accumulation type silicon carbide power MOSFET element, compared to existing
There is structure, the present invention can obtain higher channel mobility and lower conducting resistance.
Detailed description of the invention
Fig. 1~Figure 10 is that a kind of cross-section structure of novel accumulation type silicon carbide power MOSFET element provided by the invention shows
It is intended to；
Wherein, 1 is metalized drain, and 2 be N-type drain region, and 3 be N-type drift region, and 4 be the area PXing Ti, and 5 be p-type contact zone, 6
For N-type source region, 7 be N-type region, and 8 be p type buried layer, and 9 be groove, and 10 be gate electrode, and 11 be oxide layer, and 12 be metallizing source, 13
For the area PXing Zhu, 14 be the second N-type region, and 15 be buried gate electrode, and 16 be P-doped zone, and 17 be P type trap zone, and 18 be N-type substrate, 19
It is P type substrate for p type buried layer, 20,21 be substrate.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, and every details of this specification can also be based on different viewpoints and application, without departing from this
Various modifications or alterations are carried out under the spirit of invention.
Embodiment 1
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in Figure 1, include certainly
Metalized drain 1, N-type drift region 3, the metallizing source 12 being cascading on down, wherein
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: the drain region N+ 2, the drain region N+ 2
Ohmic contact is formed with the upper surface of metalized drain 1；
The upper surface of the N-type drift region 3 is Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type source region 6, the
One N-type region 7, p type buried layer 8,9 area JiPXing Zhu 13 of groove；The groove 9 is opened in the side of 3 upper surface of N-type drift region, groove
9 inside are filled with insulating layer 11, and have gate electrode 10 in insulating layer 11, and the lower surface depth of the gate electrode 10 is greater than p-type
The junction depth in body area 4；The p type buried layer 8 is located at immediately below groove 9 and directly contacts with groove 9；The area PXing Ti 4 is located at
The top of N-type drift region 3, the p-type contact zone 5 is adjacent with N-type source region 6 and is respectively positioned on the top in the area PXing Ti 4, the P
The upper surface and metallizing source 12 of type contact zone 5 and N-type source region 6 are respectively formed Ohmic contact；First N-type region 7 is located at p-type
Between body area 4 and groove 9, upper surface is N-type source region 6, its lower surface is identical as the lower surface depth in the area PXing Ti 4；The P
The area Xing Zhu 13 is located at the lower surface in the area PXing Ti 4, and the width in the area QiePXing Zhu 13 is less than or equal to the width in the area PXing Ti 4, p-type column
13 depth of area is less than or equal to the depth of N-type drift region 3.
The working principle of the present embodiment is as follows:
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallizing source (S) 12 is grounded, and metalized drain (D) 1 connects high potential, and gate electrode (G) 10 connects high potential.Work as gate electrode
When 10 applications meet or exceed threshold voltage relative to the forward bias of source electrode 12, close to the side wall of oxide layer 11 in N-type region 7
Form accumulation type channel；At the same time, when metalized drain 1 is applied with forward bias, electronics is as carrier from N-type source region
6 pass through N-type region 7 and accumulation type Channeling implantation N-type drift region 3 therein, then flow to metalized drain 1 by N-type drain region 2,
Form forward conduction electric current.
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward blocking
Formula are as follows: 12 low potential of metallizing source, metalized drain 1 connect high potential, gate electrode 10 connect relative to source electrode 12 low potential or
Negative potential.At this point, gate electrode 10 and the area PXing Ti 4 exhaust N-type region 7 jointly；The area PXing Ti 4, P post region 13 and N-type drift region 3 PN
Knot pressure resistance, depletion region extend down into N-type drain region 2 and terminate at N-type drain region 2.Wherein, P post region 13 and 3 shape of N-type drift region
At charge compensation, the doping concentration of N-type drift region 3 can be improved, to reduce the conducting resistance of device；P type buried layer 8 can be with
N-type drift region 3 forms transverse electric field, further increases the pressure resistance when forward blocking of device；Simultaneously because p type buried layer 8 is located at
The bottom of groove 9 can prevent the bottom of groove 9 from puncturing, and improve the reliability of device.
Embodiment 2
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in Fig. 2, include certainly
Metalized drain 1, N-type drift region 3, the metallizing source 12 being cascading on down, wherein
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: the drain region N+ 2, the drain region N+ 2
Ohmic contact is formed with the upper surface of metalized drain 1；
The upper surface of the N-type drift region 3 is Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type source region 6, the
One N-type region 7, p type buried layer 8 and groove 9；The groove 9 is opened in the side of 3 upper surface of N-type drift region, fills inside groove 9
There is insulating layer 11, and there is gate electrode 10 in insulating layer 11, the lower surface depth of the gate electrode 10 is greater than the knot in the area PXing Ti 4
It is deep；The p type buried layer 8 is located at immediately below groove 9 and directly contacts with groove 9；The metallizing source 12 is bathtub construction,
P-type contact zone 5 that lower surface is successively abutted, the area PXing Ti 4, N-type source region 6 surround and direct formation Ohmic contact, wherein p-type
Contact zone 5 is located at left side and lower surface and the area PXing Ti 4 be in same plane, N-type source region 6 be located at right side and N-type source region 6 and
Groove 10 directly contacts；For first N-type region 7 between the area PXing Ti 4 and groove 9, upper surface is N-type source region 6, under it
Surface is identical as the lower surface depth in the area PXing Ti 4.
The working principle of the present embodiment is as follows:
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallizing source 12 is grounded, and metalized drain 1 connects high potential, and gate electrode 10 connects high potential.When gate electrode 10 applies just
When reaching threshold voltage to bias, accumulation type channel is formed close to the side wall of oxide layer 11 in N-type region 7；At the same time, work as gold
When categoryization drain electrode 1 is applied with forward bias, electronics flows to metalized drain 1 from N-type drain region 2.So far, electronics as carrier from
N-type source region 12 passes through N-type region 7 and accumulation type Channeling implantation N-type drift region 3 therein, then flows to metal by N-type drain region 2
Change drain electrode 1, forms forward conduction electric current.
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallizing source 12 connects low potential, and metalized drain 1 connects high potential, and it is low or negative that gate electrode 10, which connects relative to source electrode 12,
Current potential.At this point, gate electrode 10 and the area PXing Ti 4 exhaust N-type region 7 jointly；P type island region 4, p type island region 5 and p type buried layer 8 and N-type are drifted about
The PN junction pressure resistance in area 3, depletion region extend down into N-type drain region 2 and terminate at N-type drain region 2.In addition, due to p type buried layer 8
It in the bottom of groove 9, can prevent the bottom of groove 9 from puncturing, improve the reliability of device.
Embodiment 3
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in figure 3, itself and reality
The difference for applying example 2 is: the Facad structure further includes the second N-type region 14, and second N-type region 14 is located at the first N-type region 7
Lower section and its doping concentration are greater than the first N zone type 7 and N-type drift region 3, with the conducting resistance of further low device；
Embodiment 4
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in figure 4, itself and reality
The difference for applying example 3 is: in order to further decrease channel resistance, above structure can also be improved as follows, and source electrode (S) is changed
To connect N-type source region 6, and Ohmic contact is formed with N-type source region 6, and the area PXing Ti 4 and p-type contact zone 5 are connect with electrode G2, and
Form Ohmic contact；
Device in this way becomes a double-gate structure, and when forward conduction, it is high potential that G and G2, which add relative to source electrode, works as grid
When the forward bias that electrode 10 and 12 applies reaches threshold voltage, not only the side wall in N-type region 7 close to oxide layer 11 forms product
Tired type channel, while entire N-type region 7 is electrically conductive, further reduced channel resistance in this way, and reduce entire device
Conducting resistance.
It should be noted that embodiment 2 equally can be using the double-gate structure such as the present embodiment.
Embodiment 5
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in figure 5, itself and reality
The difference for applying example 2 is: the Facad structure further includes the area PXing Zhu 13, and the area PXing Zhu 13 is located at p-type contact zone 5 and p-type
The lower section in body area 4, the width in the area QiePXing Zhu 13 are less than or equal to the overall width of p-type contact zone 5 and the area PXing Ti 4, the area PXing Zhu 13
Depth is less than or equal to the depth of N-type drift region 3.
The working principle of the present embodiment is as follows:
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallizing source 12 connects low potential, and metalized drain 1 connects high potential, and it is high potential that gate electrode 10, which connects relative to source electrode 12,.
When the forward bias that gate electrode 10 applies reaches threshold voltage, accumulation type is formed close to the side wall of oxide layer 11 in N-type region 7
Channel；At the same time, when metalized drain 1 is applied with forward bias, electronics flows to metalized drain 1 from N-type drain region 2.Extremely
This, electronics passes through N-type region 7 and accumulation type Channeling implantation N-type drift region 3 therein from N-type source region 12 as carrier, then leads to
It crosses N-type drain region 2 and flows to metalized drain 1, form forward conduction electric current.
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallizing source 12 connects low potential, and metalized drain 1 connects high potential, and it is low or negative that gate electrode 10, which connects relative to source electrode 12,
Current potential.At this point, gate electrode 10 and the area PXing Ti 4 exhaust N-type region 7 jointly；P type island region 4, p type island region 5 and p type buried layer 8 and respectively N-type
The PN junction pressure resistance that drift region 3 is formed, P post region 13 and N-type drift region 3 form charge compensation, further increase pressure resistance；Depletion region to
Under expand to N-type drain region 2 and at N-type drain region 2 terminate.It is located at the bottom of groove 9 additionally, due to p type buried layer 8, ditch can be prevented
The bottom of slot 9 punctures, and improves the reliability of device.
Embodiment 6
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in fig. 6, itself and reality
The difference for applying example 1 is, buried gate electrode 15 is additionally provided in the insulating layer 11, and the buried gate electrode 15 corresponds to p type buried layer 8
Top, the buried gate electrode 15 in the structure with metallizing source 12 be shorted and keep same potential or external other current potentials.
The working principle of the present embodiment are as follows:
A kind of novel accumulation type silicon carbide power MOSFET element of this example, electrode connection mode when forward conduction
Are as follows: metallizing source 12 connects low potential, and metalized drain 1 connects high potential, and it is high potential that gate electrode 10, which connects relative to source electrode 12,.It is more
Crystal silicon buried gate electrode 15 connects source electrode 12 or connects the bulk potential higher than source potential.When gate electrode 10 applies relative to source electrode 12
When forward bias reaches threshold voltage, accumulation type channel is formed close to the side wall of oxide layer 11 in N-type region 7；At the same time, when
When metalized drain 1 is applied with forward bias, electronics flows to metalized drain 1 from N-type drain region 2.So far, electronics is as carrier
Pass through N-type region 7 and accumulation type Channeling implantation N-type drift region 3 therein from N-type source region 12, gold is then flowed to by N-type drain region 2
Categoryization drain electrode 1, forms forward conduction electric current.
A kind of novel accumulation type silicon carbide power MOSFET element of this example, electrode connection mode when forward blocking
Are as follows: metallizing source 12 connects low potential, and metalized drain 1 connects high potential, and it is low or negative that gate electrode 10, which connects relative to source electrode 12,
Current potential, polysilicon buried gate electrode 15 connect source electrode 12 or connect the bulk potential higher than source potential.At this point, gate electrode 10 and p-type body
Area 4 exhausts N-type region 7 jointly；Gate electrode 15 passes through work function difference assisted depletion N-type drift region 3；The area PXing Ti 4, p type buried layer 8 divide
Not pressure-resistant with the PN junction of N-type drift region 3, depletion region extends down into N-type drain region 2 and terminates at N-type drain region 2.In addition, due to
P type buried layer 8 is located at the bottom of groove 9, can prevent the bottom of groove 9 from puncturing, and improves the reliability of device.
It should be noted that the present embodiment equally may include the second N-type region 14 (identical with embodiment 3), with further
The conducting resistance of low device.
Embodiment 7
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure as shown in fig. 7, comprises:
N-type substrate 18,
N-type drift region 3 is provided in the N-type substrate 18, the right side of the N-type drift region 3 is provided with P type trap zone 17,
The left side of the N-type drift region 3 is provided with N-type drain region 2, and the top of the N-type drift region 3 is provided with P-doped zone 16 and P
Type doped region 16 is not contacted with N-type drain region 2；
17 upper surface of P type trap zone is provided with adjacent p-type contact zone 5 and N-type source region 6, the p-type contact zone 5
Metallizing source 12 is set with 6 upper surface of N-type source region and forms Ohmic contact；
Device surface is equipped with groove 9, is filled with insulating layer 11 in groove 9, and gate electrode 10 is provided in insulating layer 11；Institute
State that 9 left surface of groove is directly contacted with P-doped zone 16, right surface is directly contacted with N-type source region 6；
Be provided with the first N-type region 7 between 9 lower surface of groove and P type trap zone 17, the right surface of first N-type region 7 with
N-type source region 6 directly contact, left surface and P type trap zone 17 are in same plane；
2 upper surface of N-type drain region is provided with metalized drain 1；
16 depth of P-doped zone is no more than 9 depth of groove.
Further, the P-doped zone 16 can be set to varying doping, i.e., dopant dose is stepped up from left to right,
Maximum laterally pressure resistance is realized in the resistance to pressure area of shortest lateral surfaces to realize.
The working principle of the present embodiment is as follows:
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallizing source 12 connects with reference to ground, and metalized drain 1 connects high potential, and gate electrode 10 connects the high height electricity relative to source electrode 12
Position.When gate electrode 10, which applies, meets or exceeds threshold voltage relative to the forward bias of source electrode 12, close to oxygen in N-type region 7
The side wall for changing layer 11 forms accumulation type channel；At the same time, when metalized drain 1 is applied with forward bias, electronics is leaked from N-type
Area 2 flows to metalized drain 1.So far, electronics passes through N-type region 7 and accumulation type channel therein from N-type source region 6 as carrier
N-type drift region 3 is injected, metalized drain 1 is then flowed to by N-type drain region 2, forms forward conduction electric current.
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallizing source 12 connects with reference to ground, and metalized drain 1 connects high potential, gate electrode 10 connect relative to source electrode low potential or
Negative potential.At this point, gate electrode 10 and P type trap zone 17 exhaust N-type region 7 jointly, conducting channel is by pinch off；P type trap zone 17 is mixed with p-type
Miscellaneous area 16 forms reverse biased pn junction with N-type drift region 3 respectively, exhausts current potential increase of the line with drain electrode 1 constantly to N-type drain region 2
It is extended with N-type substrate 18, depletion region expands to N-type drain region 2 to the left and terminates at N-type drain region 2.
Embodiment 8
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in figure 8, itself and reality
The difference for applying example 7 is: p type buried layer 19, the right surface of the p type buried layer 19 and P type trap zone are also set up in the N-type drift region 3
17 directly contact, and left surface and P-doped zone 16 are in same plane, and lower surface and P type trap zone 17 are in same plane, thickness
Less than P type trap zone 17, so that the thickness of the N-type drift region 3 is greater than the thickness of N-type region 7；
Further, the P-doped zone 16 and p type buried layer 19 can be set to varying doping, or in which one of setting
At varying doping, i.e., dopant dose is stepped up from left to right, maximum in the resistance to pressure area realization of shortest lateral surfaces to realize
Laterally pressure resistance.
The working principle of the present embodiment is as follows:
The novel accumulation type silicon carbide power MOSFET element of one of the present embodiment, electrode connection when forward conduction
Mode are as follows: metallizing source 12 connects low potential (with reference to ground), and metalized drain 1 connects high potential, and gate electrode 10 connects relative to source electrode
12 high potentials.When gate electrode 10, which applies, meets or exceeds threshold voltage relative to the forward bias of source electrode 12, in N-type region 7
Side wall close to oxide layer 11 forms accumulation type channel；At the same time, when metalized drain 1 is applied with forward bias, electronics
Metalized drain 1 is flowed to from N-type drain region 2.So far, electronics passes through N-type region 7 and accumulation therein from N-type source region 6 as carrier
Type Channeling implantation N-type drift region 3 then flows to metalized drain 1 by N-type drain region 2, forms forward conduction electric current.
A kind of novel accumulation type silicon carbide power MOSFET element of this example, electrode connection mode when forward blocking
Are as follows: metallizing source 12 connects low potential (with reference to ground), and metalized drain 1 connects high potential, and gate electrode 10 connects low relative to source electrode 12
Current potential or negative potential.At this point, gate electrode 10 and P type trap zone 17 exhaust N-type region 7 jointly, conducting channel is by pinch off；N-type drift region 3
It is depleted under the action of P-doped zone 16 and p type buried layer 19；P type trap zone 17 and p type buried layer 19 can be by 18 parts of N-type substrate
It exhausts, depletion region expands to N-type drain region 2 to the left and terminates at N-type drain region 2.
Embodiment 9
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in figure 9, itself and reality
The difference for applying example 7 is: the N-type substrate 18 replaces with P type substrate 20, and sets in 20 lower surface of P type substrate (bottom device)
Set metallizing source 12.
The working principle of the present embodiment is as follows:
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallizing source 12 connects low potential (with reference to ground), and metalized drain 1 connects high potential, and gate electrode 10 connects relative to source electrode 12
Connect high potential.When the forward bias that gate electrode 10 applies meets or exceeds threshold voltage, close to oxide layer 11 in N-type region 7
Side wall formed accumulation type channel；At the same time, when metalized drain 1 is applied with forward bias, electronics is flowed from N-type drain region 2
To metalized drain 1.So far, electronics passes through N-type region 7 and accumulation type Channeling implantation N therein from N-type source region 6 as carrier
Type drift region 3 then flows to metalized drain 1 by N-type drain region 2, forms forward conduction electric current.
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallizing source 12 connects low potential (with reference to ground), and metalized drain 1 connects high potential, and gate electrode 10 connects relative to source electrode 12
Connect low potential.At this point, gate electrode 10 and P type trap zone 17 exhaust N-type region 7 jointly, channel is by pinch off；P type trap zone 17, p-type doping
Area 16 exhausts N-type drift region 3 or part depletion, to bear pressure resistance；Depletion region at most expands to N-type drain region 2 and to the left in N
It terminates at type drain region 2.
Embodiment 10
The present embodiment provides a kind of novel accumulation type silicon carbide power MOSFET element, structure is as shown in Figure 10, comprising:
Substrate 21,
It is provided with P type trap zone 17 on the substrate 21, is provided with N-type drift region 3 in the P type trap zone 17；
The left side of the N-type drift region 3 is provided with N-type drain region 2, and the top of the N-type drift region 3 is provided with p-type doping
Area 16 and P-doped zone 16 is not contacted with N-type drain region 2；
Device surface is equipped with groove 9, is filled with insulating layer 11 in groove 9, and gate electrode 10 is provided in insulating layer 11；Institute
It states 9 left side of groove directly to contact with P-doped zone 16, N-type source region 6 and 6 lower surface of N-type source region is provided on the right side of the groove 9
It is generally aligned in the same plane with groove 9, it is adjacent on the right side of N-type source region 6 to have p-type contact zone 5 and 5 lower surface of p-type contact zone and P type trap zone
17 are in contact；The first N-type region 7 is provided between the groove 9 and p-type contact zone 5 and P type trap zone 17；
2 upper surface of N-type drain region is provided with metalized drain 1；
16 depth of P-doped zone is no more than 9 depth of groove.
Further, the P-doped zone 16 and/or P type trap zone 17 can be set to varying doping, i.e., adulterate from left to right
Dosage is stepped up, and realizes maximum laterally pressure resistance in the resistance to pressure area of shortest lateral surfaces to realize.
The working principle of the present embodiment is as follows:
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallizing source 12 connects low potential (with reference to ground), and metalized drain 1 connects high potential, and gate electrode 10 connects relative to source electrode 12
High potential.When gate electrode 10, which applies, meets or exceeds threshold voltage relative to the forward bias of source electrode 12, in N-type region 7
Side wall close to oxide layer 11 forms accumulation type channel；At the same time, when metalized drain 1 is applied with forward bias, electronics
Metalized drain 1 is flowed to from N-type drain region 2.So far, electronics passes through N-type region 7 and accumulation therein from N-type source region 6 as carrier
Type Channeling implantation N-type drift region 3 then flows to metalized drain 1 by N-type drain region 2, forms forward conduction electric current.
A kind of novel accumulation type silicon carbide power MOSFET element in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallizing source 12 connects low potential (with reference to ground), and metalized drain 1 connects high potential, and gate electrode 10 connects relative to source electrode 12
Low potential or negative potential.At this point, gate electrode 10 and P type trap zone 17 exhaust N-type region 7 jointly；P-doped zone 16, P type trap zone 17
N-type region 3 is exhausted or part depletion, to bear pressure resistance, depletion region at most expands to N-type drain region 2 and to the left at N-type drain region 2
Termination.
Carbofrax material in above-mentioned all embodiments in device could alternatively be silicon, GaAs, indium phosphide or germanium silicon half
Conductor material.
The above description is merely a specific embodiment, any feature disclosed in this specification, except non-specifically
Narration, can be replaced by other alternative features that are equivalent or have similar purpose；Disclosed all features or all sides
Method or in the process the step of, other than mutually exclusive feature and/or step, can be combined in any way.
Claims (11)
1. a kind of accumulation type silicon carbide power MOSFET element, including metalized drain 1, the N being cascading from bottom to top
Type drift region 3, metallizing source 12, wherein
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: the drain region N+ 2, the drain region N+ 2 and gold
The upper surface of categoryization drain electrode 1 forms Ohmic contact；
The upper surface of the N-type drift region 3 is Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type source region 6, the first N
Type area 7, p type buried layer 8,9 area JiPXing Zhu 13 of groove；The groove 9 is opened in the side of 3 upper surface of N-type drift region, in groove 9
Portion is filled with insulating layer 11, and has gate electrode 10 in insulating layer 11, and the lower surface depth of the gate electrode 10 is greater than the area PXing Ti
4 junction depth；The p type buried layer 8 is located at immediately below groove 9 and directly contacts with groove 9；The area PXing Ti 4 is located at N-type
The top of drift region 3, the p-type contact zone 5 is adjacent with N-type source region 6 and is respectively positioned on the top in the area PXing Ti 4, and the p-type connects
The upper surface and metallizing source 12 of touching area 5 and N-type source region 6 are respectively formed Ohmic contact；First N-type region 7 is located at the area PXing Ti
Between 4 and groove 9, upper surface is N-type source region 6, its lower surface is identical as the lower surface depth in the area PXing Ti 4；The p-type column
Area 13 is located at the lower surface in the area PXing Ti 4, and the width in the area QiePXing Zhu 13 is less than or equal to the width in the area PXing Ti 4, the area PXing Zhu 13
Depth is less than or equal to the depth of N-type drift region 3.
2. a kind of accumulation type silicon carbide power MOSFET element, including metalized drain 1, the N being cascading from bottom to top
Type drift region 3, metallizing source 12, wherein
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: the drain region N+ 2, the drain region N+ 2 and gold
The upper surface of categoryization drain electrode 1 forms Ohmic contact；
The upper surface of the N-type drift region 3 is Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type source region 6, the first N
Type area 7, p type buried layer 8 and groove 9；The groove 9 is opened in the side of 3 upper surface of N-type drift region, is filled with inside groove 9 exhausted
Edge layer 11, and there is gate electrode 10 in insulating layer 11, the lower surface depth of the gate electrode 10 is greater than the junction depth in the area PXing Ti 4；Institute
P type buried layer 8 is stated to be located at immediately below groove 9 and directly contact with groove 9；The metallizing source 12 is bathtub construction, following table
P-type contact zone 5 that face is successively abutted, the area PXing Ti 4, N-type source region 6 surround and directly form Ohmic contact, wherein p-type contacts
Area 5 is located at left side and lower surface and the area PXing Ti 4 is in same plane, and N-type source region 6 is located at right side and N-type source region 6 and groove
10 directly contact；For first N-type region 7 between the area PXing Ti 4 and groove 9, upper surface is N-type source region 6, its lower surface
It is identical as the lower surface depth in the area PXing Ti 4.
3. by accumulation type silicon carbide power MOSFET element described in claim 2, which is characterized in that the Facad structure further includes
Second N-type region 14, second N-type region 14 is located at the lower section of the first N-type region 7 and its doping concentration is greater than the first N zone type 7 and N
Type drift region 3.
4. by accumulation type silicon carbide MOSFET device described in claims 2, which is characterized in that be changed to source electrode (S) to connect N-type
Source region 6, and Ohmic contact is formed with N-type source region 6, and the area PXing Ti 4 and p-type contact zone 5 are connect with electrode G2, and form Europe
Nurse contact.
5. by accumulation type silicon carbide power MOSFET element described in claim 2, which is characterized in that the Facad structure further includes
The area PXing Zhu 13, the area PXing Zhu 13 are located at the lower section of p-type contact zone 5 and the area PXing Ti 4, the width in the area QiePXing Zhu 13 be less than or
Equal to the overall width of p-type contact zone 5 and the area PXing Ti 4,13 depth of the area PXing Zhu is less than or equal to the depth of N-type drift region 3.
6. pressing any accumulation type silicon carbide power MOSFET element of Claims 1 to 5, which is characterized in that the insulating layer
Buried gate electrode 15 is additionally provided in 11, the buried gate electrode 15 corresponds to the top of p type buried layer 8, and the buried gate electrode 15 is being tied
It is shorted in structure with metallizing source 12 and keeps same potential or external other current potentials.
7. a kind of accumulation type silicon carbide power MOSFET element, comprising:
N-type substrate 18,
N-type drift region 3 is provided in the N-type substrate 18, the right side of the N-type drift region 3 is provided with P type trap zone 17, the N
The left side of type drift region 3 is provided with N-type drain region 2, and the top of the N-type drift region 3 is provided with P-doped zone 16 and p-type is adulterated
Area 16 is not contacted with N-type drain region 2；
17 upper surface of P type trap zone is provided with adjacent p-type contact zone 5 and N-type source region 6, the p-type contact zone 5 and N-type
6 upper surface of source region is arranged metallizing source 12 and forms Ohmic contact；
Device surface is equipped with groove 9, is filled with insulating layer 11 in groove 9, and gate electrode 10 is provided in insulating layer 11；The ditch
9 left surface of slot is directly contacted with P-doped zone 16, right surface is directly contacted with N-type source region 6；
The first N-type region 7, the right surface of first N-type region 7 and N-type are provided between 9 lower surface of groove and P type trap zone 17
Source region 6 directly contact, left surface and P type trap zone 17 are in same plane；
2 upper surface of N-type drain region is provided with metalized drain 1；
16 depth of P-doped zone is no more than 9 depth of groove.
8. by accumulation type silicon carbide power MOSFET element described in claim 7, which is characterized in that in the N-type drift region 3 also
P type buried layer 19 is set, and the right surface of the p type buried layer 19 is directly contacted with P type trap zone 17, and left surface is in P-doped zone 16
Same plane, lower surface and P type trap zone 17 are in same plane, and thickness is less than P type trap zone 17, so that the N-type drift region 3
Thickness is greater than the thickness of N-type region 7.
9. by accumulation type silicon carbide power MOSFET element described in claim 7, which is characterized in that the N-type substrate 18 is replaced
For P type substrate 20, and metallizing source 12 is set in 20 lower surface of P type substrate (bottom device).
10. a kind of accumulation type silicon carbide power MOSFET element, comprising:
Substrate 21,
It is provided with P type trap zone 17 on the substrate 21, is provided with N-type drift region 3 in the P type trap zone 17；
The left side of the N-type drift region 3 is provided with N-type drain region 2, the top of the N-type drift region 3 be provided with P-doped zone 16,
And P-doped zone 16 is not contacted with N-type drain region 2；
Device surface is equipped with groove 9, is filled with insulating layer 11 in groove 9, and gate electrode 10 is provided in insulating layer 11；The ditch
The left side of slot 9 is directly contacted with P-doped zone 16, N-type source region 6 is provided on the right side of the groove 9 and 6 lower surface of N-type source region and ditch
Slot 9 is generally aligned in the same plane, adjacent on the right side of N-type source region 6 to have p-type contact zone 5 and 5 lower surface of p-type contact zone and 17 phase of P type trap zone
Contact；The first N-type region 7 is provided between the groove 9 and p-type contact zone 5 and P type trap zone 17；
2 upper surface of N-type drain region is provided with metalized drain 1；
16 depth of P-doped zone is no more than 9 depth of groove.
11. pressing any accumulation type silicon carbide power MOSFET element of claim 7~10, which is characterized in that the p-type is mixed
Miscellaneous area 16 and/or p type buried layer 17 are set as varying doping area, and dopant dose is stepped up from left to right.
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Application publication date: 20190823 |