CN109860303A - A kind of insulated-gate power device of accumulation type channel - Google Patents
A kind of insulated-gate power device of accumulation type channel Download PDFInfo
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Abstract
The invention belongs to semiconductor power device technology fields, are related to silicon carbide power semiconductor devices, specially a kind of insulated-gate power device of accumulation type channel.The device improves device channel carrier mobility using accumulation type channel, reduces channel resistance, reduces device drift region resistance using charge compensation technology, so that device on-resistance and pressure resistance are preferably traded off；The insulated-gate power device of accumulation type channel provided by the present invention can obtain higher channel mobility and lower conducting resistance compared to existing structure, while ensure the reliability of device and the feasibility of technique.
Description
Technical field
The invention belongs to semiconductor power device technology fields, are related to silicon carbide power semiconductor devices, specially a kind of
The insulated-gate power device of accumulation type channel.
Background technique
Carbofrax material has biggish forbidden bandwidth, higher carrier saturation rate and larger compared with silicon materials
The good characteristics such as thermal conductivity, therefore far super silicon materials of power electronic devices performance made using carbofrax material；Meanwhile carbon
Silicon nitride material is the compound semiconductor and wide bandgap semiconductor for the silicon dioxide insulating layer that can be uniquely formed by thermal oxide,
This makes insulated-gate power device for carbofrax material and brings great convenience, while being also silicon carbide insulated-gate power device
Development increase advantage and wide application prospect.Although silicon carbide device has many good characteristics, still have it is some not
Foot, a main limitation are the compromises of channel mobility and threshold voltage, channel mobility is low, surface trap density is high and
Worse surface texture properties, the commercial applications that these have resulted in silicon carbide insulated gate power device are more difficult；And it uses
The design of accumulation type channel, which can be obtained, designs better performance than inversion channel.
When power semiconductor uses slot grid structure, the JFET (Junction in planar gate structure can be eliminated
Field-Effect Transistor) effect, and since channel is vertical structure, cellular density is higher and reduces device
Forward voltage drop and conducting resistance；But there are electric field concentration effect at slot grid grid oxygen bottom corners, electric field is very high in grid oxygen, shadow
Chinese percussion instrument part pressure resistance, and carbofrax material critical breakdown electric field is about 10 times of silicon materials, therefore should more be paid attention to the protection of grid oxygen.
Accumulation type insulated gate semiconductor field effect transistor replaces the inversion layer ditch in traditional devices using accumulation type channel
Road, for electron conductive type device, compared with the device of traditional inversion-layer electrons channel, using the device of accumulation type electron channel
Channel carrier (electronics) mobility can be improved in part channel, reduces the channel resistance of device, it can reduce the feature of device
Resistance, while device threshold voltage can also reduce.It can be more preferable using accumulation type insulated gate semiconductor field-effect transistor structure
Compromise between channel mobility and threshold voltage on ground；Compared with the device of traditional inversion-layer electrons channel, accumulation type insulated gate half
Conductor FET device its channel mobility under acceptable threshold voltage is higher, have lower conducting resistance and
Conduction voltage drop, therefore have broad application prospects.
Summary of the invention
The purpose of the present invention is to provide a kind of insulated-gate power devices of accumulation type channel, have forward blocking ability,
Using technologies such as accumulation type channel and superjunction, higher channel mobility and lower conducting resistance are obtained.
For achieving the above object, The technical solution adopted by the invention is as follows:
A kind of insulated-gate power device of accumulation type channel, including the metallization anode being cascading from bottom to top
13, N-type drift region 3, metallization cathode 1, in which:
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: to be set under N-type drift region 3
The area N-buffer 7 on surface, the anode region P+ 6 for being set to 7 lower surface of the area N-buffer, the lower surface of the anode region P+ 6 with
The anode 13 that metallizes forms Ohmic contact；
The upper surface of the N-type drift region 3 be Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type cathodic region 2,
First N-type region 8, p type buried layer 9 and groove 10；The groove 10 is opened in the side of 3 upper surface of N-type drift region, inside groove 10
Filled with insulating layer 12, and there is gate electrode 11 in insulating layer 12；The p type buried layer 9 is located at immediately below groove 10 and and groove
10 directly contact；The area PXing Ti 4 is located at positioned at the top of N-type drift region 3, the p-type contact zone 5 and 2 phase of N-type cathodic region
Top that is adjacent and being respectively positioned on the area PXing Ti 4, the p-type contact zone 5 and the upper surface in N-type cathodic region 2 and metallization cathode 1 are equal
Form Ohmic contact；For first N-type region 8 between the area PXing Ti 4 and groove 10, upper surface is N-type cathodic region 2, under it
Surface is identical as the lower surface depth in the area PXing Ti 4.
Further, the Facad structure further includes the second N-type region 14, and second N-type region 14 is located at the first N-type region 8
Lower section and its doping concentration be greater than the first N zone type 8 and N-type drift region 3, with the conducting resistance of further low device.
Further, the backside structure further includes third N-type region 15, and the third N-type region 15 is adjacent to the anode region P+
6, top is that the area N-buffer 7, lower section and metallization anode 13 form Ohmic contact, to reduce the injection effect of anode hole
Rate, to improve the turn-off speed of device.
Further, the Facad structure further includes the area PXing Zhu 16, and the area PXing Zhu 16 is located at the area PXing Ti 4
Lower section, the width in the area QiePXing Zhu 16 are less than or equal to the width in the area PXing Ti 4, and 16 depth of P post region is less than or equal to N-type drift region
3 depth.
A kind of insulated-gate power device of accumulation type channel, including the metallization anode being cascading from bottom to top
13, N-type drift region 3, metallization cathode 1, in which:
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: to be set under N-type drift region 3
The area N-buffer 7 on surface, the anode region P+ 6 for being set to 7 lower surface of the area N-buffer, the lower surface of the anode region P+ 6 with
The anode 13 that metallizes forms Ohmic contact；
The upper surface of the N-type drift region 3 be Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type cathodic region 2,
First N-type region 8, p type buried layer 9 and groove 10；The groove 10 is opened in the side of 3 upper surface of N-type drift region, inside groove 10
Filled with insulating layer 12, and there is gate electrode 11 in insulating layer 12；The p type buried layer 9 is located at immediately below groove 10 and and groove
10 directly contact；The metallization cathode 1 is bathtub construction, p-type contact zone 5 that lower surface is successively abutted, the area PXing Ti 4,
N-type cathodic region 2 surrounds and directly forms Ohmic contact, wherein and p-type contact zone 5 is located at left side, N-type cathodic region 2 and is located at right side,
And N-type cathodic region 2 is directly contacted with groove 10；First N-type region 8 is between the area PXing Ti 4 and groove 10, upper surface
It is identical as the lower surface depth in the area PXing Ti 4 for N-type cathodic region 2, its lower surface.
Further, the Facad structure further includes the second N-type region 14, and second N-type region 14 is located at the first N-type region 8
Lower section and its doping concentration be greater than the first N zone type 8 and N-type drift region 3, with the conducting resistance of further low device.
Further, the backside structure further includes third N-type region 15, and the third N-type region 15 is adjacent to the anode region P+
6, top is that the area N-buffer 7, lower section and metallization anode 13 form Ohmic contact, to reduce the injection effect of anode hole
Rate, to improve the turn-off speed of device.
Further, the Facad structure further includes the area PXing Zhu 16, and the area PXing Zhu 16 is located at p-type contact zone 5 and p-type
The lower section in body area 4, the width in the area QiePXing Zhu 16 are less than or equal to the overall width of p-type contact zone 5 and the area PXing Ti 4, and P post region 16 is deep
Degree is less than or equal to the depth of N-type drift region 3.
Further, buried gate electrode 17 is additionally provided in the insulating layer 12, the buried gate electrode 17 is buried corresponding to p-type
The top of layer 9, the buried gate electrode 17 are shorted with metallization cathode 1 in the structure and keep same potential or external other electricity
Position.
The beneficial effects of the present invention are: the present invention provides a kind of insulated-gate power device of accumulation type channel, compared to
Existing structure, the present invention can obtain higher channel mobility and lower conducting resistance.
Detailed description of the invention
FIG. 1 to FIG. 9 is followed successively by cuing open for the insulated-gate power device of accumulation type channel in 1~embodiment of the embodiment of the present invention 9
Face structural schematic diagram；
Wherein, 1 is metallization cathode, and 2 be N-type cathodic region, and 3 be N-type drift region, and 4 be the area PXing Ti, and 5 be p-type contact zone,
6 be the anode region P+, and 7 be the area N-buffer, and 8 be the first N-type region, and 9 be p type buried layer, and 10 be groove, and 11 be gate electrode, and 12 be exhausted
Edge layer, 13 be metallization anode, and 14 be the second N-type region, and 15 be third N-type region, and 16 be P post region.
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, and every details of this specification can also be based on different viewpoints and application, without departing from this
Various modifications or alterations are carried out under the spirit of invention.
Embodiment 1
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure as shown in Figure 1, include from lower and
On be cascading metallization anode 13, N-type drift region 3, metallization cathode 1, in which:
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: to be set under N-type drift region 3
The area N-buffer 7 on surface, the anode region P+ 6 for being set to 7 lower surface of the area N-buffer, the lower surface of the anode region P+ 6 with
The anode 13 that metallizes forms Ohmic contact；
The upper surface of the N-type drift region 3 be Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type cathodic region 2,
First N-type region 8, p type buried layer 9 and groove 10；The groove 10 is opened in the side of 3 upper surface of N-type drift region, inside groove 10
Filled with insulating layer 12, and there is gate electrode 11 in insulating layer 12, the lower surface depth of the gate electrode 11 can be equal to can also
To be not equal to the junction depth in the area PXing Ti 4；The p type buried layer 9 is located at immediately below groove 10 and directly contacts with groove 10；The P
The area Xing Ti 4 is located at positioned at the top of N-type drift region 3, and the p-type contact zone 5 is adjacent with N-type cathodic region 2 and is respectively positioned on p-type
The top in body area 4, the p-type contact zone 5 are respectively formed Ohmic contact with the upper surface in N-type cathodic region 2 and metallization cathode 1；Institute
The first N-type region 8 is stated between the area PXing Ti and groove 10, upper surface is N-type cathodic region 2, its lower surface and the area PXing Ti 4
Lower surface depth is identical.
The working principle of the present embodiment is as follows:
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallization cathode (K) 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode
1 high potential.When gate electrode 11, which applies, reaches threshold voltage relative to the forward bias of cathode 1, close to absolutely in N-type region 8
The side wall of edge layer 12 forms accumulation type channel；At the same time, when the anode 13 that metallizes is applied with forward bias, hole is from metal
Change anode 13 and flow to the anode region P+ 6, electronics flows to N-type cathodic region 2 from metallization cathode 1.So far, electronics is as carrier from N
N-type region 8 and accumulation type Channeling implantation N-type drift region 3 therein are passed through in type cathodic region 2, and through the area N-buffer 7 and the anode region P+
6, finally flow into anode 13；N-type drift region 3 is injected by the area N-buffer 7 from the anode region P+ 6 as carrier in hole, and through P
Area 4 and the area P 5 flow into cathode 1, form forward conduction electric current.
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects low potential, and gate electrode 11 connects relative to cathode 1
Low potential or negative potential.At this point, gate electrode 11 and the area PXing Ti 4 exhaust N-type region 8 jointly；The area PXing Ti 4, p type island region 9 respectively with N-type
The PN junction pressure resistance of drift region 3, depletion region extend down into the area N-buffer 7 and terminate at the area N-buffer 7.Additionally, due to P
Type buried layer 9 is located at the bottom of groove 10, can prevent the bottom insulation layer of groove 10 from puncturing, and improves the reliability of device.
Embodiment 2
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure is as shown in Fig. 2, itself and embodiment
1 difference is: the Facad structure further includes the second N-type region 14, and second N-type region 14 is located under the first N-type region 8
Square and its doping concentration is greater than the first N zone type 8 and N-type drift region 3, with the conducting resistance of further low device；Meanwhile it is described
Backside structure further includes third N-type region 15, and the third N-type region 15 is adjacent to the anode region P+ 6, and top is the area N-b uffer
7, lower section and metallization anode 13 form Ohmic contact, to reduce the injection efficiency of anode hole, to improve the shutdown of device
Speed.Above two setting, in a certain structure, can only be arranged it is one of, can also two kinds be arranged simultaneously.
Embodiment 3
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure is as shown in figure 3, itself and embodiment
1 difference is: the Facad structure further includes the area PXing Zhu 16, and the area PXing Zhu 16 is located at the lower section in the area PXing Ti 4, and p-type
The width in column area 16 is less than or equal to the width in the area PXing Ti 4, and 16 depth of P post region is less than or equal to the depth of N-type drift region 3.
The working principle of the present embodiment is as follows:
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode 1
High potential.It is close in N-type region 8 when gate electrode 11, which applies, meets or exceeds threshold voltage relative to the forward bias of cathode 1
The side wall of insulating layer 12 forms accumulation type channel；At the same time, when the anode 13 that metallizes is applied with forward bias, hole is from gold
Categoryization anode 13 flows to the anode region P+ 6, and electronics flows to N-type cathodic region 2 from metallization cathode 1.So far, electronics as carrier from
N-type region 8 and accumulation type Channeling implantation N-type drift region 3 therein are passed through in N-type cathodic region 2, and eventually arrive at anode 13；Make in hole
N-type drift region 3 is injected by the area N-buffer 7 from the anode region P+ 6 for carrier, and is arrived through p type island region 16, p type island region 4 and p type island region 5
Up to cathode 1, forward conduction electric current is formed.
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode 1
Low potential or negative potential.At this point, gate electrode 11 and the area PXing Ti 4 exhaust N-type region 8 jointly；P type island region 4, p type island region 9 and P post region 16 are same
Shi Zuoyong depletion drift region 3, bears pressure resistance, and P post region 16 and N-type drift region 3 form charge compensating layer, improve the resistance to of device
Pressure, reduces the conducting resistance of device；Depletion region extends down into the area N-buffer 7 and terminates at the area N-buffer 7.Separately
Outside, since p type buried layer 9 is located at the bottom of groove 10, it can prevent the bottom of groove 10 from puncturing, improve the reliable of device
Property.
Embodiment 4
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure is as shown in figure 4, itself and embodiment
3 difference is: the Facad structure further includes the second N-type region 14, and second N-type region 14 is located under the first N-type region 8
Square and its doping concentration is greater than the first N zone type 8 and N-type drift region 3, with the conducting resistance of further low device；Meanwhile it is described
Backside structure further includes third N-type region 15, and the third N-type region 15 is adjacent to the anode region P+ 6, and top is the area N-b uffer
7, lower section and metallization anode 13 form Ohmic contact, to reduce the injection efficiency of anode hole, to improve the shutdown of device
Speed.Above two setting, in a certain structure, can only be arranged it is one of, can also two kinds be arranged simultaneously.
Embodiment 5
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure is as shown in figure 5, itself and embodiment
1 difference is: buried gate electrode 17 is additionally provided in the insulating layer 12, the buried gate electrode 17 corresponds to the upper of p type buried layer 9
Side, the buried gate electrode 17 are shorted with metallization cathode 1 in the structure and keep same potential or external other current potentials.
The working principle of the present embodiment is as follows:
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode 1
High potential, buried gate electrode 17 connect cathode or the external current potential higher than cathode 1.When the forward bias that gate electrode 11 applies reaches threshold value
When voltage, accumulation type channel is formed close to the side wall of insulating layer 12 in N-type region 8；At the same time, when metallization anode 13 applies
When forward bias, hole flows to the anode region P+ 6 from metallization anode 13, and electronics flows to N-type cathodic region 2 from metallization cathode 1.
So far, electronics passes through N-type region 8 and accumulation type Channeling implantation N-type drift region 3 therein from N-type cathodic region 2 as carrier；It is empty
N-type drift region 3 is injected by the area N-buffer 7 from the anode region P+ 6 as carrier in cave, forms forward conduction electric current.
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode 1
Low potential, buried gate electrode 17 connect cathode or the external current potential higher than cathode 1.At this point, gate electrode 11 and the area PXing Ti 4 exhaust N jointly
Type area 8；Buried gate electrode 17 passes through work function difference assisted depletion N-type drift region 3；The area PXing Ti 4,9 collective effect of p type buried layer exhaust
Or the area part depletion PiaoNXing Yi, pressure resistance is born, depletion region is downwards and largest extension is to the area N-buffer 7 and in the area N-buffer 7
Place's termination.In addition, p type buried layer 9 is located at the bottom of groove 10, it can prevent the bottom of groove 10 from puncturing, improve device
Reliability.
It should be noted that 1~embodiment of embodiment 4, grid structure is divided shown in settable the present embodiment, to reduce
The capacity effect of device, and the present embodiment is only the example based on embodiment 1 using division grid structure.
Embodiment 6
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure as shown in fig. 6, include from lower and
On be cascading metallization anode 13, N-type drift region 3, metallization cathode 1, in which:
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: to be set under N-type drift region 3
The area N-buffer 7 on surface, the anode region P+ 6 for being set to 7 lower surface of the area N-buffer, the lower surface of the anode region P+ 6 with
The anode 13 that metallizes forms Ohmic contact；
The upper surface of the N-type drift region 3 be Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type cathodic region 2,
First N-type region 8, p type buried layer 9 and groove 10；The groove 10 is opened in the side of 3 upper surface of N-type drift region, inside groove 10
Filled with insulating layer 12, and there is gate electrode 11 in insulating layer 12, the lower surface depth of the gate electrode 11 can be equal to can also
To be not equal to the junction depth in the area PXing Ti 4；The p type buried layer 9 is located at immediately below groove 10 and directly contacts with groove 10；The gold
Categoryization cathode 1 is bathtub construction, and p-type contact zone 5 that lower surface is successively abutted, the area PXing Ti 4, N-type cathodic region 2 surround simultaneously
Directly form Ohmic contact, wherein p-type contact zone 5 is located at left side, N-type cathodic region 2 is located at right side, and N-type cathodic region 2 and ditch
Slot 10 directly contacts；For first N-type region 8 between the area PXing Ti 4 and groove 10, upper surface is N-type cathodic region 2, under it
Surface is identical as the lower surface depth in the area PXing Ti 4.
In the present embodiment, the depth of metallization 1 flute profile of cathode can be identical as the depth of groove 10, can also not
Together.
The working principle of the present embodiment is as follows:
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode 1
High potential.It is close in N-type region 8 when gate electrode 11, which applies, meets or exceeds threshold voltage relative to the forward bias of cathode 1
The side wall of insulating layer 12 forms accumulation type channel；At the same time, when the anode 13 that metallizes is applied with forward bias, hole is from gold
Categoryization anode 13 flows to the anode region P+ 6, and electronics flows to N-type cathodic region 2 from metallization cathode 1.So far, electronics as carrier from
N-type region 8 and accumulation type Channeling implantation N-type drift region 3 therein are passed through in N-type cathodic region 2；Hole is as carrier from the anode region P+
6 inject N-type drift region 3 by the area N-buffer 7, form forward conduction electric current.
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode 1
Low potential.At this point, gate electrode 11 and the area PXing Ti 4 exhaust N-type region 8 jointly；The PN of p type island region 5, the area PXing Ti 4 and N-type drift region 3
Knot pressure resistance, while p type buried layer 9 and the pressure resistance of the PN junction of N-type drift region 3, depletion region extend downwards, at most extend to the area N-buffer
7 and at the area N-buffer 7 terminate.In addition, the bottom of groove 10 can be prevented since p type buried layer 9 is located at the bottom of groove 10
Puncture, improves the reliability of device.
Embodiment 7
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure is as shown in fig. 7, itself and embodiment
6 difference is: the Facad structure further includes the second N-type region 14, and second N-type region 14 is located under the first N-type region 8
Square and its doping concentration is greater than the first N zone type 8 and N-type drift region 3, with the conducting resistance of further low device；Meanwhile it is described
Backside structure further includes third N-type region 15, and the third N-type region 15 is adjacent to the anode region P+ 6, and top is the area N-b uffer
7, lower section and metallization anode 13 form Ohmic contact, to reduce the injection efficiency of anode hole, to improve the shutdown of device
Speed.Above two setting, in a certain structure, can only be arranged it is one of, can also two kinds be arranged simultaneously.
Embodiment 8
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure is as shown in figure 8, itself and embodiment
6 difference is: the Facad structure further includes the area PXing Zhu 16, and the area PXing Zhu 16 is located at p-type contact zone 5 and the area PXing Ti 4
Lower section, the width in the area QiePXing Zhu 16 is less than or equal to the overall width of p-type contact zone 5 and the area PXing Ti 4, and 16 depth of P post region is small
In or equal to N-type drift region 3 depth.
The working principle of the present embodiment is as follows:
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward conduction
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode 1
High potential.When the forward bias that gate electrode 11 applies meets or exceeds threshold voltage, close to insulating layer 12 in N-type region 8
Side wall forms accumulation type channel；At the same time, when metallize anode 13 be applied with forward bias when, hole from metallization anode 13
The anode region P+ 6 is flowed to, electronics flows to N-type cathodic region 2 from metallization cathode 1.So far, electronics is as carrier from N-type cathodic region 2
By N-type region 8 and accumulation type Channeling implantation N-type drift region 3 therein；N- is passed through from the anode region P+ 6 as carrier in hole
N-type drift region 3 is injected in the area buffer 7, forms forward conduction electric current.
A kind of insulated-gate power device of novel accumulation type channel in the present embodiment, electrode connection side when forward blocking
Formula are as follows: metallization cathode 1 connects low potential (with reference to ground), and metallization anode 13 connects high potential, and gate electrode 11 connects relative to cathode 1
Low potential.At this point, gate electrode 11 and the area PXing Ti 4 exhaust N-type region 8 jointly；N-type is floated in the area PXing Ti 4, P post region 16 and p type island region 9
It moves area 3 to exhaust, bears pressure resistance, depletion region extends downwards, and largest extension is to the area N-buffer 7 and whole at the area N-buff er 7
Knot.In addition, can prevent the bottom of groove 10 from puncturing since p type buried layer 9 is located at the bottom of groove 10, improve device
Reliability.
Embodiment 9
The present embodiment provides a kind of insulated-gate power device of accumulation type channel, structure is as shown in figure 9, itself and embodiment
8 difference is: the Facad structure further includes the second N-type region 14, and second N-type region 14 is located under the first N-type region 8
Square and its doping concentration is greater than the first N zone type 8 and N-type drift region 3, with the conducting resistance of further low device；Meanwhile it is described
Backside structure further includes third N-type region 15, and the third N-type region 15 is adjacent to the anode region P+ 6, and top is the area N-b uffer
7, lower section and metallization anode 13 form Ohmic contact, to reduce the injection efficiency of anode hole, to improve the shutdown of device
Speed.Above two setting, in a certain structure, can only be arranged it is one of, can also two kinds be arranged simultaneously.
It should be noted that 6~embodiment of embodiment 9, grid structure is divided shown in settable embodiment 5, to reduce
The capacity effect of device.
In 1~embodiment of embodiment device 9, the carbofrax material in device can be replaced silicon, GaAs, indium phosphide or germanium
Silicon semiconductor material.
The above description is merely a specific embodiment, any feature disclosed in this specification, except non-specifically
Narration, can be replaced by other alternative features that are equivalent or have similar purpose；Disclosed all features or all sides
Method or in the process the step of, other than mutually exclusive feature and/or step, can be combined in any way.
Claims (9)
1. a kind of insulated-gate power device of accumulation type channel, including metallization anode 13, the N being cascading from bottom to top
Type drift region 3, metallization cathode 1, in which:
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: to be set to 3 lower surface of N-type drift region
The area N-buffer 7, be set to the anode region P+ 6 of 7 lower surface of the area N-buffer, the lower surface of the anode region P+ 6 and metal
Change anode 13 and forms Ohmic contact；
The upper surface of the N-type drift region 3 is Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type cathodic region 2, first
N-type region 8, p type buried layer 9 and groove 10；The groove 10 is opened in the side of 3 upper surface of N-type drift region, fills inside groove 10
There is insulating layer 12, and there is gate electrode 11 in insulating layer 12, the lower surface depth of the gate electrode 11 is greater than the knot in the area PXing Ti 4
It is deep；The p type buried layer 9 is located at immediately below groove 10 and directly contacts with groove 10；The area PXing Ti 4 is located at N-type and floats
The top in area 3 is moved, the p-type contact zone 5 is adjacent with N-type cathodic region 2 and is respectively positioned on the top in the area PXing Ti 4, and the p-type connects
The upper surface and metallization cathode 1 in touching area 5 and N-type cathodic region 2 are respectively formed Ohmic contact；First N-type region 8 is located at p-type body
Between area 4 and groove 10, upper surface is N-type cathodic region 2, its lower surface is identical as the lower surface depth in the area PXing Ti 4.
2. by the insulated-gate power device of accumulation type channel described in claim 1, which is characterized in that the Facad structure further includes
Second N-type region 14, second N-type region 14 is located at the lower section of the first N-type region 8 and its doping concentration is greater than the first N zone type 8 and N
Type drift region 3, with the conducting resistance of further low device.
3. by the insulated-gate power device of accumulation type channel described in claim 1, which is characterized in that the backside structure further includes
Third N-type region 15, the third N-type region 15 are adjacent to the anode region P+ 6, and top is the area N-buffer 7, lower section and metallization sun
Pole 13 forms Ohmic contact, to reduce the injection efficiency of anode hole, to improve the turn-off speed of device.
4. by the insulated-gate power device of accumulation type channel described in claim 1, which is characterized in that the Facad structure is also
Including the area PXing Zhu 16, the area PXing Zhu 16 is located at the lower section in the area PXing Ti 4, and the width in the area QiePXing Zhu 16 is less than or equal to p-type
The width in body area 4,16 depth of P post region are less than or equal to the depth of N-type drift region 3.
5. a kind of insulated-gate power device of accumulation type channel, including metallization anode 13, the N being cascading from bottom to top
Type drift region 3, metallization cathode 1, in which:
The lower surface of the N-type drift region 3 is backside structure, and the backside structure includes: to be set to 3 lower surface of N-type drift region
The area N-buffer 7, be set to the anode region P+ 6 of 7 lower surface of the area N-buffer, the lower surface of the anode region P+ 6 and metal
Change anode 13 and forms Ohmic contact；
The upper surface of the N-type drift region 3 is Facad structure, comprising: the area PXing Ti 4, p-type contact zone 5, N-type cathodic region 2, first
N-type region 8, p type buried layer 9 and groove 10；The groove 10 is opened in the side of 3 upper surface of N-type drift region, fills inside groove 10
Have insulating layer 12, and there is gate electrode 11 in insulating layer 12, the p type buried layer 9 be located at immediately below groove 10 and with groove 10 directly
Contact；The metallization cathode 1 is bathtub construction, p-type contact zone 5 that lower surface is successively abutted, the area PXing Ti 4, N-type
Cathodic region 2 surrounds and directly forms Ohmic contact, wherein p-type contact zone 5 is located at left side, N-type cathodic region 2 is located at right side, and N
Type cathodic region 2 is directly contacted with groove 10；First N-type region 8 is between the area PXing Ti 4 and groove 10, upper surface N
Type cathodic region 2, its lower surface are identical as the lower surface depth in the area PXing Ti 4.
6. by the insulated-gate power device of accumulation type channel described in claim 5, which is characterized in that the Facad structure further includes
Second N-type region 14, second N-type region 14 is located at the lower section of the first N-type region 8 and its doping concentration is greater than the first N zone type 8 and N
Type drift region 3, with the conducting resistance of further low device.
7. by the insulated-gate power device of accumulation type channel described in claim 5, which is characterized in that the backside structure further includes
Third N-type region 15, the third N-type region 15 are adjacent to the anode region P+ 6, and top is the area N-buffer 7, lower section and metallization sun
Pole 13 forms Ohmic contact, to reduce the injection efficiency of anode hole, to improve the turn-off speed of device.
8. by the insulated-gate power device of accumulation type channel described in claim 5, which is characterized in that the Facad structure further includes
The area PXing Zhu 16, the area PXing Zhu 16 are located at the lower section of p-type contact zone 5 and the area PXing Ti 4, the width in the area QiePXing Zhu 16 be less than or
Equal to the overall width of p-type contact zone 5 and the area PXing Ti 4,16 depth of P post region is less than or equal to the depth of N-type drift region 3.
9. pressing the insulated-gate power device of any accumulation type channel of claim 1~8, which is characterized in that the insulating layer
Buried gate electrode 17 is additionally provided in 12, the buried gate electrode 17 corresponds to the top of p type buried layer 9, and the buried gate electrode 17 is being tied
It is shorted in structure with metallization cathode 1 and keeps same potential or external other current potentials.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112420694A (en) * | 2020-11-06 | 2021-02-26 | 电子科技大学 | Reverse-conducting silicon carbide JFET power device integrated with reverse Schottky freewheeling diode |
| CN113299748A (en) * | 2021-05-25 | 2021-08-24 | 重庆伟特森电子科技有限公司 | T-gate groove silicon carbide transistor with accumulation type channel structure and manufacturing method thereof |
| CN114678413A (en) * | 2022-03-25 | 2022-06-28 | 电子科技大学 | High-reliability silicon carbide MOSFET (Metal-oxide-semiconductor field Effect transistor) device integrating P-type channel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090032821A1 (en) * | 2007-07-30 | 2009-02-05 | Hitachi, Ltd. | Semiconductor device and electrical circuit device using thereof |
| CN101694851A (en) * | 2009-10-16 | 2010-04-14 | 电子科技大学 | Grooved gate IGBT with P-type floating layer |
| US20140097447A1 (en) * | 2012-10-04 | 2014-04-10 | Hyundai Motor Company | Semiconductor device and method of manufacturing the same |
| CN104617136A (en) * | 2015-01-08 | 2015-05-13 | 山东大学 | 4H-silicon carbide based N-channel accumulating high-voltage insulated gate bipolar transistor |
| CN106098777A (en) * | 2016-06-22 | 2016-11-09 | 电子科技大学 | A kind of splitting bar accumulation type DMOS device |
-
2019
- 2019-03-26 CN CN201910231488.1A patent/CN109860303A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090032821A1 (en) * | 2007-07-30 | 2009-02-05 | Hitachi, Ltd. | Semiconductor device and electrical circuit device using thereof |
| CN101694851A (en) * | 2009-10-16 | 2010-04-14 | 电子科技大学 | Grooved gate IGBT with P-type floating layer |
| US20140097447A1 (en) * | 2012-10-04 | 2014-04-10 | Hyundai Motor Company | Semiconductor device and method of manufacturing the same |
| CN104617136A (en) * | 2015-01-08 | 2015-05-13 | 山东大学 | 4H-silicon carbide based N-channel accumulating high-voltage insulated gate bipolar transistor |
| CN106098777A (en) * | 2016-06-22 | 2016-11-09 | 电子科技大学 | A kind of splitting bar accumulation type DMOS device |
Non-Patent Citations (1)
| Title |
|---|
| 沈天飞: "《绕线式异步电机转子IGBT斩波调阻调速系统的研究》", 31 December 2003 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112420694A (en) * | 2020-11-06 | 2021-02-26 | 电子科技大学 | Reverse-conducting silicon carbide JFET power device integrated with reverse Schottky freewheeling diode |
| CN113299748A (en) * | 2021-05-25 | 2021-08-24 | 重庆伟特森电子科技有限公司 | T-gate groove silicon carbide transistor with accumulation type channel structure and manufacturing method thereof |
| CN114678413A (en) * | 2022-03-25 | 2022-06-28 | 电子科技大学 | High-reliability silicon carbide MOSFET (Metal-oxide-semiconductor field Effect transistor) device integrating P-type channel |
| CN114678413B (en) * | 2022-03-25 | 2023-04-28 | 电子科技大学 | High reliability silicon carbide MOSFET device integrating P-channel |
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