CN109148591A - A kind of silicon carbide tank grate MOS device of integrated schottky diode - Google Patents

A kind of silicon carbide tank grate MOS device of integrated schottky diode Download PDF

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Publication number
CN109148591A
CN109148591A CN201811008629.5A CN201811008629A CN109148591A CN 109148591 A CN109148591 A CN 109148591A CN 201811008629 A CN201811008629 A CN 201811008629A CN 109148591 A CN109148591 A CN 109148591A
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type
metal
drift region
silicon carbide
gate structure
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CN201811008629.5A
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罗小蓉
张科
何清源
廖天
樊雕
方健
杨霏
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

The invention belongs to power semiconductor technologies fields, and in particular to a kind of silicon carbide tank grate MOS device of integrated schottky diode.The body diode of Conventional silicon carbide MOS device is bipolar device since conduction voltage drop is big, thus the loss in Reverse recovery is larger.The present invention is integrated with a Schottky diode between the slot grid of silicon carbide trench MOS, device is in Reverse recovery, this Schottky diode plays afterflow, so that the conduction voltage drop of freewheeling diode be made to reduce, reverse recovery time and reverse recovery charge reduce than traditional body diode.When bearing high pressure, the depletion action between slot grid and N-type drift region between p-type protection zone and N-type drift region can protect Schottky contacts not to be influenced device by high electric field, improves the pressure resistance and reliability of device.

Description

A kind of silicon carbide tank grate MOS device of integrated schottky diode
Technical field
The invention belongs to power semiconductor device technology fields, are related to a kind of silicon carbide tank grid of integrated schottky diode MOS device.
Background technique
Carbofrax material is due to having many advantages, such as that forbidden bandwidth is big, electronics saturation drift velocity is high and thermal conductivity is high, in function Rate devices field has very wide application prospect.Silicon carbide trench MOS is compared to conventional planar MOS device, conducting channel position In internal, gully density is largely increased, while channel becomes vertical distribution from original transverse direction, and the area of single cellular subtracts It is small, so that the current density of unit area greatly improves.Currently, on the market there are many mature silicon carbide trench MOS product, It is widely used in the topology such as inverter circuit, chopper circuit.
However, the body diode cut-in voltage due to silicon carbide tank grate MOS device is higher, cause Reverse recovery performance compared with Difference is usually used as freewheeling diode to one Schottky diode of silicon carbide device inverse parallel in actual application.But The Schottky diode of introducing will lead to the negative effects such as device volume increases and parasitic capacitance increases again, therefore, in silicon carbide Integrated schottky diode has become the important research direction in the field in MOS device body.
Summary of the invention
In order to reduce the conduction voltage drop of freewheeling diode, reduce reverse recovery charge, the present invention proposes a kind of integrated Xiao Te The silicon carbide tank grate MOS device of based diode.Same electricity is connect by forming Schottky contacts between slot grid, and with source contact Position, to improve the Reverse recovery ability of device.Meanwhile the mutual depletion action between gate structure and N-type drift region makes For device when bearing high pressure, the surface field of Schottky contacts keeps a lower value, to improve the reliability of device.
Technical solution of the present invention is as follows:
A kind of silicon carbide tank grate MOS device of integrated schottky diode, including gate structure, source configuration, N-type substrate 1, drift region 2 and metal 9；Wherein, drift region 2 is located at 1 upper surface of N-type substrate, and metal 9 is located in the middle part of 2 upper layer of drift region, in gold Belong to 9 two sides, there is the source configuration being symmetrical set and gate structure, gate structure is located at close to the side of metal 9, source junction Structure is located at 2 upper layer two sides of drift region；
The source configuration includes P type trap zone 3 and is located at 3 upper layer of P type trap zone, and the N-type source region 5 and P being set side by side Type body contact zone 4, N-type source region 5 are contacted with gate structure, and the N-type source region 5 and the common exit of p-type body contact zone 4 are source Pole；P type trap zone 3 forms channel region close to gate structure side；
The gate structure include gate insulation layer 6, the gate electrode 7 in gate insulation layer 6 and be located at 6 bottom of gate insulation layer P+ type protection zone 8,7 exit of gate electrode is grid, and P+ type protection zone 8 and source electrode are electrically connected；
Draw drain electrode in 1 bottom of N-type substrate；
The metal 9 forms Schottky contacts with drift region 2 at contact surface, and afterflow two is used as in device reverse-conducting Pole pipe.
Further, metal 9 and N-type drift region 2 are formed by schottky junctions contacting surface and are located at gate insulation layer bottom side, Depth is identical as slot grid depth.
Further, metal 9 and N-type drift region 2 are formed by Schottky contacts and are located at device surface.
Further, metal 9 and N-type drift region 2 are formed by Schottky contacts and are located at device surface, and metal 9 and grid There is spacing between the structure of pole, P+ type protection zone 8 extends to the vertical edges edge of 9 side of metal along gate structure side.
Beneficial effects of the present invention are that, relative to Conventional silicon carbide Groove gate MOS devices, the present invention is in silicon carbide trench MOS It is integrated with a Schottky diode in device, and is used as freewheeling diode in device reverse-conducting, to have lower Reverse-conducting pressure drop and less reverse recovery charge.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of embodiment 1；
Fig. 2 is the structural schematic diagram of embodiment 2；
Fig. 3 is the structural schematic diagram of embodiment 3.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing
Embodiment 1
As shown in Figure 1, the silicon carbide tank grate MOS device of this example, including gate structure, source configuration, N-type substrate 1, drift Move area 2 and metal 9.Wherein, drift region 2 is located on N-type substrate 1, and source configuration and gate structure are located on drift region 2, Metal 9 is between two adjacent gate structures.
The source configuration includes P type trap zone 3 and N-type source region 5 and p-type body contact zone 4 positioned at 3 top of P type trap zone, The N-type source region 5 and the common exit of p-type body contact zone 4 are source electrode；P type trap zone 3 forms channel close to 6 side of gate insulation layer Area；
Between source configuration and metal 9, the gate structure includes gate insulation layer 6, is located at grid the gate structure Polysilicon or metal grid region 7 in insulating layer 6 and the P+ type protection zone 8 positioned at gate insulation layer bottom, 7 exit of the grid region are Grid, P+ type protection zone 8 and source contact connect same current potential；
1 exit of N-type substrate is drain electrode；
Metal 9 and drift region 2 form Schottky contacts at contact surface, and two pole of afterflow is used as in device reverse-conducting Pipe, metal 9 and source contact connect same current potential.
The working principle of this example are as follows:
For device in reverse-conducting, what it is as afterflow is integrated Schottky diode, rather than body diode.Due to Xiao Special based diode conduction voltage drop is low and is unipolar device, therefore the reverse-conducting pressure drop of device is lower, and reverse recovery charge is less, So as to realize faster Reverse recovery speed and smaller reverse recovery loss.Device is when bearing high voltage, p-type protection Depletion action between area and N-type drift region can play a protective role to Schottky contacts, make the surface electricity of Schottky contacts Field keeps a lower value.
Embodiment 2
As shown in Fig. 2, compared with Example 1, the Schottky contacts in this example are located at device surface, born in device high resistance to The surface field that Schottky contacts can be further decreased when pressure, obtains better protecting effect.
Compared with Example 1, this example is easier to realize in technique.
Embodiment 3
As shown in figure 3, compared with Example 2, the bottom of this example bracket groove grid and the side wall close to metal 9 are protected with P+ Area, the protection zone P+ and N-type drift region form depletion region, can be with while further decreasing Schottky contacts surface field The gate leakage capacitance for reducing device, improves the switching characteristic of device.

Claims (4)

1. a kind of silicon carbide tank grate MOS device of integrated schottky diode, including gate structure, source configuration, N-type substrate (1), drift region (2) and metal (9)；Wherein, drift region (2) are located at N-type substrate (1) upper surface, and metal (9) is located at drift region (2) in the middle part of upper layer, in metal (9) two sides, there is the source configuration being symmetrical set and gate structure, gate structure is located at close The side of metal (9), source configuration are located at drift region (2) upper layer two sides；
The source configuration includes P type trap zone (3) and is located at P type trap zone (3) upper layer, and the N-type source region (5) that is set side by side and P-type body contact zone (4), N-type source region (5) are contacted with gate structure, and the N-type source region (5) and p-type body contact zone (4) are drawn jointly Outlet is source electrode；P type trap zone (3) forms channel region close to gate structure side；
The gate structure includes gate insulation layer (6), the gate electrode (7) being located in gate insulation layer (6) and is located at gate insulation layer (6) The P+ type protection zone (8) of bottom, gate electrode (7) exit are grid, and P+ type protection zone (8) and source electrode are electrically connected；
Draw drain electrode in N-type substrate (1) bottom；
The metal (9) and drift region (2) form Schottky contacts at contact surface, and afterflow two is used as in device reverse-conducting Pole pipe.
2. a kind of silicon carbide tank grate MOS device of integrated schottky diode according to claim 1, which is characterized in that Metal (9) and N-type drift region (2) are formed by schottky junctions contacting surface and are located at gate insulation layer bottom side, and depth and slot grid are deep It spends identical.
3. a kind of silicon carbide tank grate MOS device of integrated schottky diode according to claim 1, which is characterized in that Metal (9) and N-type drift region (2) are formed by Schottky contacts and are located at device surface.
4. a kind of silicon carbide tank grate MOS device of integrated schottky diode according to claim 1, which is characterized in that Metal (9) and N-type drift region (2) are formed by Schottky contacts and are located at device surface, and have between metal (9) and gate structure Spacing, P+ type protection zone (8) extend to the vertical edges edge of metal (9) side along gate structure side.
CN201811008629.5A 2018-08-29 2018-08-29 A kind of silicon carbide tank grate MOS device of integrated schottky diode Pending CN109148591A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742148A (en) * 2019-01-16 2019-05-10 厦门芯光润泽科技有限公司 Silicon carbide UMOSFET device and preparation method thereof
CN111223937A (en) * 2020-01-17 2020-06-02 电子科技大学 GaN longitudinal field effect transistor with integrated freewheeling diode
CN113130627A (en) * 2021-04-13 2021-07-16 电子科技大学 Silicon carbide fin-shaped gate MOSFET integrated with channel diode
WO2024113129A1 (en) * 2022-11-29 2024-06-06 江苏能华微电子科技发展有限公司 Integrated schottky device and preparation method

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US20070075362A1 (en) * 2005-09-30 2007-04-05 Ching-Yuan Wu Self-aligned schottky-barrier clamped trench DMOS transistor structure and its manufacturing methods
CN101889334A (en) * 2007-10-04 2010-11-17 飞兆半导体公司 High density FET with integrated schottky
US20110278666A1 (en) * 2010-05-13 2011-11-17 Wei Liu Trench MOSFET with integrated Schottky diode in a single cell and method of manufacture
CN103187288A (en) * 2011-12-29 2013-07-03 立新半导体有限公司 Preparation method of groove semiconductor power device with static protection function
US20130313576A1 (en) * 2011-02-02 2013-11-28 Rohm Co., Ltd. Semiconductor power device and method for producing same
US20170133503A1 (en) * 2015-02-11 2017-05-11 Monolith Semiconductor Inc. High voltage semiconductor devices and methods of making the devices

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JP2006210392A (en) * 2005-01-25 2006-08-10 Toyota Motor Corp Semiconductor device and manufacturing method thereof
JP2006344779A (en) * 2005-06-09 2006-12-21 Toyota Motor Corp Semiconductor device and control method therefor
US20070075362A1 (en) * 2005-09-30 2007-04-05 Ching-Yuan Wu Self-aligned schottky-barrier clamped trench DMOS transistor structure and its manufacturing methods
CN101889334A (en) * 2007-10-04 2010-11-17 飞兆半导体公司 High density FET with integrated schottky
US20110278666A1 (en) * 2010-05-13 2011-11-17 Wei Liu Trench MOSFET with integrated Schottky diode in a single cell and method of manufacture
US20130313576A1 (en) * 2011-02-02 2013-11-28 Rohm Co., Ltd. Semiconductor power device and method for producing same
CN103187288A (en) * 2011-12-29 2013-07-03 立新半导体有限公司 Preparation method of groove semiconductor power device with static protection function
US20170133503A1 (en) * 2015-02-11 2017-05-11 Monolith Semiconductor Inc. High voltage semiconductor devices and methods of making the devices

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742148A (en) * 2019-01-16 2019-05-10 厦门芯光润泽科技有限公司 Silicon carbide UMOSFET device and preparation method thereof
CN109742148B (en) * 2019-01-16 2024-04-02 厦门芯光润泽科技有限公司 Silicon carbide UMOSFET device and preparation method thereof
CN111223937A (en) * 2020-01-17 2020-06-02 电子科技大学 GaN longitudinal field effect transistor with integrated freewheeling diode
CN111223937B (en) * 2020-01-17 2021-04-23 电子科技大学 GaN longitudinal field effect transistor with integrated freewheeling diode
CN113130627A (en) * 2021-04-13 2021-07-16 电子科技大学 Silicon carbide fin-shaped gate MOSFET integrated with channel diode
CN113130627B (en) * 2021-04-13 2022-08-23 电子科技大学 Silicon carbide fin-shaped gate MOSFET integrated with channel diode
WO2024113129A1 (en) * 2022-11-29 2024-06-06 江苏能华微电子科技发展有限公司 Integrated schottky device and preparation method

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