CN110164791A - 基板处理装置 - Google Patents
基板处理装置 Download PDFInfo
- Publication number
- CN110164791A CN110164791A CN201811574249.8A CN201811574249A CN110164791A CN 110164791 A CN110164791 A CN 110164791A CN 201811574249 A CN201811574249 A CN 201811574249A CN 110164791 A CN110164791 A CN 110164791A
- Authority
- CN
- China
- Prior art keywords
- substrate
- flat surface
- diameter
- board treatment
- rotating base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 222
- 238000011282 treatment Methods 0.000 title claims abstract description 74
- 230000002093 peripheral effect Effects 0.000 claims abstract description 29
- 239000012530 fluid Substances 0.000 claims description 36
- 238000003780 insertion Methods 0.000 claims description 7
- 230000037431 insertion Effects 0.000 claims description 7
- 230000000116 mitigating effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 59
- 238000012545 processing Methods 0.000 description 55
- 230000007246 mechanism Effects 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 238000012546 transfer Methods 0.000 description 14
- 239000007788 liquid Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002344 fibroplastic effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明提供一种减轻基板的下表面的污染的基板处理装置。保护盘(10)配置在旋转底座(21)与基板(W)之间,能够在与基板(W)朝向下方分离的分离位置与比分离位置更接近基板(W)的接近位置之间进行升降。保护盘(10)的上表面包括:内方面(12S),设置在比多个保持销(20)更靠径向内方的位置上;以及平坦面(13S),设置在比内方面(12S)更靠径向外方的位置,并且设置在比内方面(12S)更靠上方的位置。平坦面(13S)与基板(W)的周缘部(WEP1)之中、比外周端WE更靠径向内方的部分的下表面相向。
Description
技术领域
本发明涉及一种基板处理装置。在成为处理对象的基板中,例如,包含半导体晶片、液晶显示装置用基板、等离子体显示器用基板、场发射显示器(Field EmissionDisplay,FED)用基板、光盘用基板、磁盘用基板、磁光盘用基板、光掩模用基板、陶瓷基板、太阳能电池用基板等基板。
背景技术
对基板逐块地进行处理的单片式基板处理装置包括旋转底座(spin base)以及保持销。旋转底座能够围绕着沿铅垂方向的旋转轴线进行旋转。保持销设置在旋转底座上,保持基板。在利用这种基板处理装置的基板处理中,可以利用从处理液喷嘴喷出的处理液,对旋转状态的基板的上表面进行处理。
但是,在基板处理中,存在如下的情况:在旋转的结构物(旋转底座或保持销)的周围产生气流,基板处理中所产生的处理液的雾气(mist)(微小液滴)乘着气流绕入至基板的下方,从而处理液附着在基板的下表面。因此,即使在已防止在基板的上表面及周缘上蔓延而附着在基板的下表面的情况下,处理液也有可能附着在基板的下表面。
在下述专利文献1所述的基板处理装置中,提出了如下的基板处理的方案:通过在基板的下表面与旋转底座之间设置保护盘,而一边保护基板的下表面,一边对基板的上表面进行处理。详细来说,通过使保护盘从旋转底座翘起而与基板的下表面接近,来抑制处理液的雾气进入至保护盘与基板的下表面之间。
[现有技术文献]
[专利文献]
[专利文献1]日本专利特开2015-2328号公报
发明内容
[发明所要解决的问题]
但是,在所述技术的情况下,即便使保护盘与基板的下表面接近,也会在基板的周缘部,与保护盘之间形成间隙。因此,处理液的雾气有可能穿过所述间隙而污染基板的下表面。
因此,本发明的目的在于提供一种减轻基板的下表面的污染的技术。
[解决问题的技术手段]
为了解决所述问题,第一形态是一种基板处理装置,对基板进行处理,所述基板处理装置包括:旋转底座,围绕着沿铅垂方向的旋转轴线进行旋转;多个保持部,在所述旋转底座的旋转方向上相互隔开间隔而设置在所述旋转底座上,在比所述旋转底座更靠上方的位置上保持所述基板的周缘部;相向构件,配置在所述旋转底座与所述基板之间,能够在与所述基板朝向下方分离的分离位置与比所述分离位置更接近所述基板的接近位置之间进行升降;以及气体供给部,在所述相向构件与所述多个保持部所保持的基板之间供给气体;并且,所述相向构件的上表面包括:平坦面,与所述基板的所述周缘部之中、比外周端更靠径向内方的部分的下表面相向;以及内方面,设置在比所述平坦面更靠径向内方的位置,并且设置在比所述平坦面更靠下方的位置。
并且,第二形态根据第一形态的基板处理装置,其中所述相向构件的上表面包括在所述内方面与所述平坦面之间朝向径向外方而向上倾斜的倾斜面。
并且,第三形态根据第一基板处理装置或第二基板处理装置,其中所述相向构件的所述平坦面是从比所述多个保持部更靠径向内方的位置延伸至径向外方。
并且,第四形态根据第三形态的基板处理装置,其中所述相向构件具有插通所述保持部的插通孔,所述相向构件的所述平坦面是从比所述插通孔更靠径向内方的规定位置延伸至径向外方。
并且,第五形态根据第一形态至第四形态中任一项的基板处理装置,其中所述平坦面延伸至比所述基板更靠径向外方的位置。
并且,第六形态根据第一形态至第五形态中任一项的基板处理装置,其中还包括对所述多个保持部所保持的所述基板的上表面供给处理液的处理液供给部。
[发明的效果]
根据第一形态的基板处理装置,与基板的周缘部相向的相向构件的平坦面位于比内方面更靠上方的位置。由此,能够减小基板的周缘部与相向构件的间隙。因此,能够增大在所述间隙内朝向径向外方的气流的线速度。并且,与基板的周缘部相向的部分为平坦面,所以能够在基板的周缘部与相向构件的平坦面之间,调整流向径向外方的气流。因此,可以调整在基板的周缘部的气流,所以能够抑制异物进入至基板的下表面侧。
根据第二形态的基板处理装置,可以减轻在基板与相向构件之间,从内方面流向平坦面的气流因为所述基板与所述相向构件的高低差而发生紊乱。
根据第三形态的基板处理装置,可以减轻在保持部的附近的气流的紊乱的产生。
根据第四形态的基板处理装置,相向构件的平坦面与基板之中比保持部更靠径向内方的部分相向,因此能够有效减轻流向径向外方的气流发生紊乱的情况。
根据第五形态的基板处理装置,平坦面延伸至比基板更靠径向外方的位置,所以能够减轻在基板的外周端附近的气流的紊乱的产生。
根据第六形态的基板处理装置,通过在相向构件与基板之间供给气体,可以形成从相向构件与基板之间流向径向外方的气流。通过所述气流,可以减轻基板的上表面的处理液绕入至基板的下表面侧的情况。
附图说明
图1是表示第一实施方式的基板处理装置1的结构的图解性的俯视图。
图2是用于说明第一实施方式的处理单元2的结构例的示意图。
图3是从上方观察第一实施方式的旋转底座21的俯视图。
图4是从上方观察保护盘10的概略俯视图。
图5是表示保持销20的周边的概略侧视图。
图6是用于说明第一实施方式的基板处理装置1的电性结构的框图。
图7是用于说明第一实施方式的基板处理装置1的基板处理的一例的流程图。
图8是表示保持销20的周边的概略俯视图。
图9是表示变形例的保持销20的周边的概略俯视图。
[符号的说明]
1:基板处理装置
2:处理单元
3:控制单元
3A:处理器(中央处理器)
3B:存储器
5:旋转夹盘
8:处理液供给单元
9:清洗单元
10:保护盘(相向构件)
10H:插通孔
11:气体供给单元(气体供给部)
12S:内方面
13S:平坦面
14S:倾斜面
16:腔室
20:保持销(保持部)
20a:夹持部
20b:支撑部
20H:销插通孔
21:旋转底座
22:旋转轴
23:电动马达
25:开闭单元
31:毛刷
32:毛刷固持器
35:毛刷臂
36:转动轴
37:臂移动机构
40:处理液喷嘴
41:处理液供给管
42:处理液阀
50:气体喷嘴
51:气体供给管
52:气体阀
54:整流构件
60:保护盘升降单元
61:引导轴
62:线性轴承
63:凸缘
130:边界部分
130S:部分
A1:旋转轴线
A2:转动轴线
B1:空间
B2:整流空间
C:载体
CR、IR:搬运机器人
F1:气流
L1:直线
LP:搭载板
S:旋转方向
S101~S113:步骤
W:基板
WE:外周端
WEP1:周缘部
具体实施方式
以下,一边参照附图,一边对本发明的实施方式进行说明。再者,所述实施方式中所述的构成元件说到底是例示,其主旨并非将本发明的范围只限定于它们。在附图中,为了容易理解,有时根据需要,将各部的尺寸或数量加以夸张或简化而图示。
<1.第一实施方式>
图1是表示第一实施方式的基板处理装置1的结构的图解性的俯视图。基板处理装置1是逐块地处理硅晶片等基板W的单片式装置。在所述实施方式中,基板W是圆板状的基板。基板处理装置1包括利用药液或冲洗液等处理液对基板W进行处理的多个处理单元2、载置收容在处理单元2中处理的多块基板W的载体(carrier)C的搭载板(load board)LP、在搭载板LP与处理单元2之间搬运基板W的搬运机器人IR及搬运机器人CR、以及对基板处理装置1进行控制的控制单元3。搬运机器人IR在载体C与搬运机器人CR之间搬运基板W。搬运机器人CR在搬运机器人IR与处理单元2之间搬运基板W。多个处理单元2例如具有同样的结构。
图2是用于说明第一实施方式的处理单元2的结构例的示意图。处理单元2还包括:旋转夹盘5,一边以水平的姿势保持一块基板W,一边使基板W围绕着穿过基板W的中央部的铅垂的旋转轴线A1进行旋转;处理液供给单元8,对基板W的上表面供给去离子水(Deionized Water,DIW)等处理液;清洗单元9,使毛刷(brush)31在基板W的上表面擦附而对基板W的上表面进行清洗;以及保护盘10,与基板W从下方相向,保护基板W的下表面与基板处理中所产生的处理液的雾气隔开。保护盘10是与基板W的至少周缘部WEP1从下方相向的相向构件的一例。处理单元2还包括对基板W的下表面与保护盘10之间的空间B1供给氮气(N2)等气体的气体供给单元11。
再者,在本案中,将与旋转轴线A1正交的方向称为“径向”。并且,将在径向上朝向旋转轴线A1的方向称为“径向内方”,将在径向上朝向与旋转轴线A1侧相反之侧的方向称为“径向外方”。
处理单元2还包括收容旋转夹盘5的腔室16(参照图1)。在腔室16内,形成有用于将基板W搬入至腔室16内,或从腔室16内搬出基板W的出入口(未图示)。在腔室16内,包括使所述出入口开闭的挡板(shutter)单元(未图示)。
旋转夹盘5包括旋转底座21、在比旋转底座21更靠上方的位置上保持基板W的周缘部WEP1的多个保持销20、与旋转底座21的中央结合的旋转轴22、以及对旋转轴22赋予旋转力的电动马达23。旋转轴22沿旋转轴线A1在铅垂方向上延伸。旋转轴22贯穿旋转底座21,在比旋转底座21更靠上方的位置具有上端。旋转底座21具有沿水平方向的圆板形状。多个保持销20在旋转方向S上空开间隔而设置在旋转底座21的上表面的周缘部WEP1。
为了对多个保持销20进行开闭驱动,包括开闭单元25。多个保持销20通过利用开闭单元25设为关闭状态而保持基板W。多个保持销20通过利用开闭单元25设为打开状态而释放对基板W的保持。
开闭单元25包括例如连杆(link)机构(未图示)及驱动源(未图示)。所述驱动源例如包括滚珠螺杆机构、以及对滚珠螺杆赋予驱动力的电动马达。开闭单元25也可以构成为利用磁力,使多个保持销20开闭。在这种情况下,开闭单元25例如包括安装在保持销20上的第一磁铁(未图示)、以及通过与第一磁铁接近而对第一磁铁赋予排斥力或吸引力的第二磁铁(未图示)。利用第二磁铁赋予至第一磁铁的排斥力或吸引力而对保持销20的开闭进行切换。
电动马达23通过使旋转轴22旋转,而使旋转底座21旋转。通过所述旋转底座21的旋转,而使基板W围绕着旋转轴线A1旋转。旋转夹盘5包含在基板保持旋转单元中,所述基板保持旋转单元是保持基板W并使基板W围绕着沿铅垂方向的旋转轴线A1旋转。处理液供给单元8包括对基板W的上表面供给DIW等处理液的处理液喷嘴40、与处理液喷嘴40结合的处理液供给管41、以及插装在处理液供给管41上的处理液阀42。对处理液供给管41,从处理液供给源供给处理液。
处理液喷嘴40既可以是固定在固定位置上的固定喷嘴,也可以是能够沿水平方向及铅垂方向移动的移动喷嘴。并且,从处理液喷嘴40供给的处理液并不限于DIW,还可以是碳酸水、电解离子水、臭氧水、稀释浓度(例如,10ppm~100ppm左右)的盐酸水、还原水(氢水)。
清洗单元9包括用于对基板W的上表面进行清洗的毛刷31、支撑毛刷31的毛刷臂35、使毛刷臂35转动的转动轴36、以及臂移动机构37,所述臂移动机构37通过对转动轴36进行驱动,而使毛刷臂35在水平方向及铅垂方向上移动。毛刷31保持于配置在毛刷31的上方的毛刷固持器(brush holder)32上。毛刷固持器32从毛刷臂35向下方突出。
毛刷31是例如由聚乙烯醇(polyvinyl alcohol,PVA)等合成树脂制作的可弹性变形的海绵毛刷。毛刷31从毛刷固持器32向下方突出。毛刷31并不限于海绵毛刷,也可以是包含由树脂制的多个纤维形成的毛束的毛刷。
臂移动机构37包括:毛刷水平驱动机构(未图示),通过使转动轴36围绕着转动轴线A2转动而使毛刷臂35水平移动;以及毛刷铅垂驱动机构(未图示),通过使转动轴36铅垂地移动而使毛刷臂35铅垂地移动。毛刷水平驱动机构例如包括使转动轴36转动的电动马达。毛刷铅垂驱动机构例如包括滚珠螺杆机构、以及对所述滚珠螺杆机构进行驱动的电动马达。
气体供给单元11包括对基板W的下表面与保护盘10的上表面之间的空间B1供给氮气等气体的气体喷嘴50、与气体喷嘴50结合的气体供给管51、以及插装在气体供给管51上而使气体的流路开闭的气体阀52。对气体供给管51,从气体供给源供给氮气等气体。
作为从气体供给源供给至气体供给管51的气体,优选的是氮气等惰性气体。所谓惰性气体,并不限于氮气,其是对基板W的上表面及图案具有惰性的气体。作为惰性气体的示例,除了氮气以外,还可举出氦气或氩气等稀有气体类、合成气体(氮气与氢气体的混合气体)。并且,也可以将空气用作从气体供给源供给至气体供给管51的气体。
气体喷嘴50插通至旋转轴22。气体喷嘴50的上端从旋转轴22的上端露出。在比气体喷嘴50的上端更靠上方的位置上,也可设置有对从气体喷嘴50喷出的气体进行调整的整流构件54。保护盘10为大致圆环状。在形成于保护盘10的中心的插通孔10H内,插通着旋转轴22。保护盘10配置在保持于保持销20上的基板W与旋转底座21之间。保护盘10能够相对于旋转轴22而上下移动。
保护盘10与使保护盘10升降的保护盘升降单元60连结。保护盘10通过保护盘升降单元60,而能够在与基板W朝向下方分离的分离位置与如下的接近位置之间移动,所述接近位置是在比所述分离位置更靠上方的位置上与保持于保持销20的基板W的下表面接近的位置。保护盘升降单元60是使相向构件升降的相向构件升降单元的一例。
保护盘升降单元60例如包括滚珠螺杆机构(未图示)、以及对所述滚珠螺杆机构赋予驱动力的电动马达(未图示)。并且,保护盘升降单元60也可以构成为利用磁力使保护盘10升降。在这种情况下,保护盘升降单元60例如包括安装在保护盘10上的第一磁铁(未图示)、以及通过对第一磁铁赋予排斥力而使保护盘10与第一磁铁一同上升的第二磁铁(未图示)。
在保护盘10的下表面上,结合着与旋转轴线A1平行地在铅垂方向上延伸的引导轴61。引导轴61在基板W的旋转方向S上隔开相等间隔而配置在多个部位。引导轴61与设置在旋转底座21的对应部位的线性轴承(linear bearing)62结合。引导轴61能够一边被所述线性轴承62引导,一边朝向铅垂方向,即朝向与旋转轴线A1平行的方向移动。并且,与保护盘10的下表面结合的引导轴61与线性轴承62结合,所以保护盘10围绕着旋转轴线A1与旋转底座21一体旋转。
引导轴61贯通线性轴承62。引导轴61在其下端,包括朝向侧方突出的凸缘(flange)63。通过凸缘63抵接于线性轴承62的下端,来限制引导轴61的朝向上方的移动,即限制保护盘10的朝向上方的移动。即,凸缘63是限制保护盘10的朝向上方的移动的限制构件。
保持销20包括夹持部20a及支撑部20b。夹持部20a是从水平方向抵接于基板W的周端的部分,在与另一个夹持部20a之间夹持基板W。支撑部20b是从下方支撑基板W的部分。在本例中,支撑部20b的上表面成为越朝向旋转轴线A1侧(径向内方侧)越向下倾斜的倾斜面。所述倾斜面在这里是以固定的倾斜度倾斜。
图3是从上方观察第一实施方式的旋转底座21的俯视图。图4是从上方观察保护盘10的概略俯视图。图5是表示保持销20的周边的概略侧视图。在图3中,为了便于说明,以两点划线表示基板W。如图3~图5所示,保护盘10包括多个销插通孔20H。多个销插通孔20H设置于在水平方向上与多个保持销20分别相对应的位置(即,在铅垂方向上重合的位置)。而且,在多个销插通孔20H中,分别插通着配置在相对应的位置上的一个保持销20。
保护盘10的上表面包括内方面12S及平坦面13S。内方面12S是设置在比保持销20更靠径向内方的位置的面。在本例中,内方面12S是与水平面平行的平坦面。但是,内方面12S不必为平坦面。
平坦面13S设置在比内方面12S更靠径向外方的位置。在本例中,平坦面13S是设置成包围内方面12S的外周的环状,占据着保护盘10的上表面的周缘部WEP1(从保护盘10的外周端算起规定的长度的径向内方的部分)。在本例中,平坦面13S是与水平面平行,并与水平地保持于多个保持销20上的基板W的下表面大致平行地配置。内方面12S低于平坦面13S。再者,在相向构件10的上表面,不妨碍在比平坦面13S更靠内方的位置上,设置高于平坦面13S的部分。
平坦面13S与基板W的周缘部WEP1(基板W的外周端WE及与所述外周端WE稍靠内方的部分)相向。平坦面13S与从基板W的外周端WE算起优选的是3mm以上内方的部分为止的周缘部WEP1相向。
再者,在保护盘10中,如果与基板W接近的区域增大,就有可能与基板W接触。因此,平坦面13S可设置成与从基板W的外周端WE到例如10mm为止的周缘部WEP1相向。
保护盘10的上表面还包括倾斜面14S。倾斜面14S设置在内方面12S与平坦面13S之间,在本例中形成为圆环状。并且,倾斜面14S从内方面12S向径向外侧朝向上方以固定的倾斜度倾斜。
如图5所示,在本例中,倾斜面14S的外方端(径向外方的端部)与平坦面13S的内方端(径向内方的端部)直接相连。在基板W保持于保持销20上的状态下,平坦面13S与倾斜面14S的边界部分130(平坦面13S的内方端)配置在比保持销20所保持的基板W的外周端WE更靠径向内方的位置。
当保护盘10移动至接近位置时,基板W的周缘部WEP1与保护盘10的平坦面13S相向,由此在所述周缘部WEP1与所述平坦面13S之间形成整流空间B2。从气体喷嘴50供给的气体会朝向径向外方移动,但是通过所述气体穿过整流空间B2,而可对所述气体的流动(气流F1)进行调整。并且,所述气体在经整流的状态下,从基板W的外周端WE朝向径向外方不断跑出。由此,能够抑制在基板W的外周端WE附近,处理液等从外方进入至整流空间B2。
并且,通过将保护盘10的上表面之中、内方面12S与平坦面13S之间的连接部分设为平滑的倾斜面14S,可以减轻在空间B1内朝向径向外方的气流F1在进入至整流空间B2之前发生紊乱的情况。
图6是用于说明第一实施方式的基板处理装置1的电性结构的框图。控制单元3包括微型计算机,按照规定的程序,对基板处理装置1中所含的控制对象进行控制。更具体来说,控制单元3包括处理器(中央处理器(Central Processing Unit,CPU))3A、以及存储着程序的存储器3B。构成为通过处理器3A执行程序,来执行用于基板处理的各种控制。控制单元3例如对搬运机器人IR、搬运机器人CR、臂移动机构37、电动马达23、保护盘升降单元60、开闭单元25及阀类42、阀类52等的动作进行控制。
<基板处理装置1的动作>
图7是用于说明第一实施方式的基板处理装置1的基板处理的一例的流程图。以下说明的各处理只要未特别声明,都设为通过控制单元3执行程序来实现。
首先,控制单元3进行基板搬入处理(步骤S101)。具体来说,利用搬运机器人IR、搬运机器人CR将未处理的基板W从载体C搬入至处理单元2,并递交至旋转夹盘5。基板W在直到通过搬运机器人CR搬出之前的期间内,从旋转底座21的上表面朝向上方隔开间隔而大致水平地被保持着。
基板搬入处理之后,控制单元3进行基板保持处理(步骤S102)。具体来说,开闭单元25使基板W的周缘保持于多个保持销20上。这时,多个保持销20是在使基板W上形成有器件的器件面朝向下方的状态下保持基板W。
基板保持处理之后,控制单元3进行保护盘上升处理(步骤S103)。具体来说,保护盘升降单元60使保护盘10上升至接近位置为止。由此,如图5所示,在基板W的周缘部WEP1与保护盘10的平坦面13S之间形成整流空间B2。
保护盘上升处理之后,控制单元3进行气体供给开始处理(步骤S104)。具体来说,通过打开气体阀52,而开始对保护盘10的上表面与基板W的下表面之间的空间B1供给气体(氮气等)。这时的气体的供给流量例如为100L/min~200L/min(升/分钟)。气体的供给是进行至后述气体供给停止处理(步骤S111)为止。
气体供给开始处理之后,控制单元3进行基板旋转开始处理(步骤S105)。具体来说,通过电动马达23使旋转底座21旋转,而使水平地保持于保持销20上的基板W围绕着旋转轴线A1旋转。这时的基板W的旋转速度例如为100rpm~1000rpm。
基板旋转开始处理之后,控制单元3进行处理液供给开始处理(步骤S106)。具体来说,在继续对保护盘10的上表面与基板W的下表面之间的空间B1供给气体的状态下,打开处理液阀42。由此,开始对基板W的上表面供给处理液(DIW等)。
处理液供给开始处理之后,控制单元3进行擦拭(scrub)清洗处理(步骤S107)。具体来说,通过臂移动机构37使毛刷臂35移动,而将毛刷臂35按压至基板W的上表面。基板W通过所述基板旋转开始处理(步骤S105)而旋转,因此使毛刷31在基板W的上表面上擦附。当毛刷31抵接于基板W之后经过规定时间后,臂移动机构37使毛刷31从旋转夹盘5的上方退避至侧方。
擦拭清洗处理之后,控制单元3进行处理液供给停止处理(步骤S108)。具体来说,通过使处理液阀42关闭,而停止来自处理液喷嘴40的处理液的供给。
处理液供给停止处理之后,控制单元3进行基板高速旋转处理(步骤S109)。具体来说,通过电动马达23使旋转底座21的旋转加速,而使基板W的旋转速度增大。由此,基板W的上表面及周端面(外周端WE的端面)的液滴因离心力而被甩开,因此,使基板W干燥。即,基板高速旋转处理相当于甩干(spin dry)处理。所述甩干处理时的基板W的旋转速度例如为1500rpm~3000rpm。
当高速旋转开始后经过规定时间时,控制单元3进行基板旋转停止处理(步骤S110)。具体来说,通过电动马达23使旋转底座21的旋转停止,而使基板W的旋转停止。
基板旋转停止处理之后,控制单元3进行气体供给停止处理(步骤S111)。具体来说,关闭气体阀52,停止对基板W的下表面与保护盘10的上表面之间的空间B1供给气体(氮气等)。
气体供给停止处理之后,控制单元3进行保护盘下降处理(步骤S112)。具体来说,保护盘升降单元60使保护盘10下降至分离位置为止。
保护盘下降处理之后,控制单元3进行基板保持解除处理(步骤S113)。具体来说,通过开闭单元25分别使多个保持销20分别为打开状态,而从多个保持销20的保持中释放基板W。
基板保持解除处理之后,控制单元3进行基板搬出处理。具体来说,搬运机器人CR进入至处理单元2,从旋转夹盘5捧出处理完的基板W,并搬出至处理单元2外。将所述基板W从搬运机器人CR递交至搬运机器人IR,并利用搬运机器人IR,收纳至载体C。
<关于在基板的周缘部附近的气流>
已知在旋转的结构物的周围,会产生气流。具体来说,借由基板W、保护盘10及旋转底座21进行旋转,环境气体可能从径向外方进入至基板W的下表面与保护盘10的上表面之间的空间B1。并且,环境气体可能经由保持销20与保护盘10之间,从径向外方进入至空间B1。如上所述,当产生从径向外方流向空间B1的气流时,从基板W上表面上甩开而抵达至基板W的端面的处理液有可能与所述气流一同进入至空间B1,而污染基板W的下表面。
因此,在基板处理装置1中,通过在基板W的下表面与保护盘10的上表面之间供给气体,而使得在基板W的周缘部WEP1附近产生流向径向外方的气流F1(参照图5)。由此,可抑制环境气体从径向外方进入至空间B1。在本实施方式中,设置在保护盘10的上表面之中、比内方面12S更靠上方的位置上的平坦面13S与基板W的周缘部WEP1相向。因此,基板W的周缘部WEP1与保护盘10之间的间隙小于与内方面12S相向的基板W的内方的部分。因此,可以增大从基板W的周缘部WEP1朝向径向外方跑出的气流F1的线速度,所以能够抑制处理液从径向外方进入至基板W的下表面侧。
当所述气流F1发生紊乱时,有可能无法阻碍环境气体及处理液从径向外方进入。因此,理想的是在基板W的周缘部WEP1,调整流向径向外方的气流F1。与此相对,在本实施方式中,通过使保护盘10的平坦面13S与基板W的周缘部WEP1相向,而形成整流空间B2。整流空间B2是基板W的平坦的下表面与保护盘10的平坦面13S所夹的空间。因此,能够调整在整流空间B2内流向径向外方的气流F1。
特别是保护盘10的平坦面13S与基板W的平坦的下表面大致平行。因此,整流空间B2的高度宽幅在径向上为大致固定。因此,能够有效地调整流向径向外方的气流F1。
并且,保护盘10的平坦面13S是从比销插通孔20H更靠径向内方的位置延伸至径向外方。因此,能够在比保持销20更靠径向内方的位置上,调整气流F1。
并且,平坦面13S是延伸至比基板W的外周端WE更进一步靠近径向外方的位置。在这种情况下,平坦面13S是相向至基板W的外周端WE为止,所以能够将气流F1调整至极其靠近外周端WE的区域为止。即,可以减轻在外周端WE的附近,气流F1发生紊乱的情况。
图8是表示保持销20的周边的概略俯视图。如图8所示,本例的保护盘10的平坦面13S之中、相对于保持销20位于径向内方的部分130S(平坦面13S之中,俯视时,位于保持销20的中心(重心)与旋转轴线A1连结而成的直线L1上的部分(参照图3))突出至比旋转方向S上的另一部分更靠径向内方的位置。在本例中,平坦面13S之中、相对于插通保持销20的销插通孔20H位于径向内方的部分130S突出至比旋转方向S上的另一部分更靠径向内方的位置。由此,在相对于保持销20为径向内方的位置上,也可以使平坦面13S与基板W的下表面相向。因此,在相对于保持销20为径向内方的区域内,也可以调整流向径向外方的气流F1。
<2.变形例>
以上,已对实施方式进行说明,但是本发明并不限定于如上所述的实施方式,而能够进行各种变形。
图9是表示变形例的保持销20的周边的概略俯视图。在图8所示的示例中,在相对于销插通孔20H为径向内方的位置上,平坦面13S呈朝向径向内方凸出的曲线状突出。与此相对,在图9所示的示例中,平坦面13S呈朝向径向内方凸出的折线状突出。在这种情况下,也可以在比保持销20更靠径向内方的位置上,使平坦面13S与基板W的下表面相向。因此,能够在比保持销20更靠径向内方的位置上,调整流向径向外方的气流F1。
例如,在第一实施方式中,销插通孔20H形成为圆环状的贯通孔状,但是也可以形成为从保护盘10的外周端向内方凹陷的缺口状。
保护盘10不必包括与基板W的周缘部WEP1的整个周方向(旋转方向S)相向的平坦面13S。例如,保护盘10也可以包括与基板W的周缘部WEP1之中、除了外周端WE以外比外周端WE更靠内方的部分相向的平坦面。
保护盘10的上表面之中,内方面12S与平坦面13S的连接部分是设为倾斜度为固定的倾斜面14S。但是,所述连接部分的倾斜度也可以不固定。并且,倾斜面14S是形成为高度连续地变化的倾斜状,但也可以形成为高度不连续地变化的阶梯状。
保护盘10不必包括与整个周缘部WEP1相向的平坦面13S。例如,保护盘10也可以包括与基板W的周缘部WEP1之中除了外周端WE以外的内方的部分相向的平坦面。
对本发明进行了详细说明,但所述说明在所有方面均为例示,而并非将本发明限定于此。可理解为在不脱离本发明的范围的情况下,可设想出未例示的无数的变形例。所述各实施方式及各变形例中所说明的各构成只要不相互矛盾,就可以适当组合或省略。
Claims (6)
1.一种基板处理装置,对基板进行处理,所述基板处理装置的特征在于包括:
旋转底座,围绕着沿铅垂方向的旋转轴线进行旋转;
多个保持部,在所述旋转底座的旋转方向上相互隔开间隔而设置在所述旋转底座上,在比所述旋转底座更靠上方的位置上保持所述基板的周缘部;
相向构件,配置在所述旋转底座与所述基板之间,能够在与所述基板朝向下方分离的分离位置与比所述分离位置更接近所述基板的接近位置之间进行升降;以及
气体供给部,在所述相向构件与多个所述保持部所保持的所述基板之间供给气体;并且
所述相向构件的上表面包括:
平坦面,与所述基板的所述周缘部之中、比外周端更靠径向内方的部分的下表面相向;以及
内方面,设置在比所述平坦面更靠径向内方的位置,并且设置在比所述平坦面更靠下方的位置上。
2.根据权利要求1所述的基板处理装置,其特征在于,
所述相向构件的上表面包括:
倾斜面,在所述内方面与所述平坦面之间朝向径向外方而向上倾斜。
3.根据权利要求1或2所述的基板处理装置,其特征在于,
所述相向构件的所述平坦面是从比多个所述保持部更靠径向内方的位置延伸至径向外方。
4.根据权利要求3所述的基板处理装置,其特征在于,
所述相向构件具有插通所述保持部的插通孔,
所述相向构件的所述平坦面是从比所述插通孔更靠径向内方的规定位置延伸至径向外方。
5.根据权利要求1至4中任一项所述的基板处理装置,其特征在于,
所述平坦面延伸至比所述基板更靠径向外方的位置。
6.根据权利要求1至5中任一项所述的基板处理装置,其特征在于还包括:
处理液供给部,将处理液供给至多个所述保持部所保持的所述基板的上表面。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018022893A JP7179466B2 (ja) | 2018-02-13 | 2018-02-13 | 基板処理装置 |
JP2018-022893 | 2018-02-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110164791A true CN110164791A (zh) | 2019-08-23 |
CN110164791B CN110164791B (zh) | 2024-01-19 |
Family
ID=67541099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201811574249.8A Active CN110164791B (zh) | 2018-02-13 | 2018-12-21 | 基板处理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11101146B2 (zh) |
JP (1) | JP7179466B2 (zh) |
KR (2) | KR20190098037A (zh) |
CN (1) | CN110164791B (zh) |
TW (1) | TWI691009B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7370201B2 (ja) * | 2019-09-20 | 2023-10-27 | 株式会社Screenホールディングス | 基板処理装置 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011035051A (ja) * | 2009-07-30 | 2011-02-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2012094836A (ja) * | 2010-09-27 | 2012-05-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
CN104051305A (zh) * | 2013-03-15 | 2014-09-17 | 大日本网屏制造株式会社 | 基板处理装置 |
JP2015170772A (ja) * | 2014-03-07 | 2015-09-28 | 株式会社Screenホールディングス | 基板処理装置 |
CN105378909A (zh) * | 2013-06-18 | 2016-03-02 | 株式会社思可林集团 | 基板保持旋转装置、具有基板保持旋转装置的基板处理装置以及基板处理方法 |
CN106206367A (zh) * | 2015-05-29 | 2016-12-07 | 株式会社思可林集团 | 基板处理装置 |
JP2017005194A (ja) * | 2015-06-15 | 2017-01-05 | 株式会社Screenホールディングス | 基板処理装置 |
US20170162409A1 (en) * | 2015-12-07 | 2017-06-08 | Ebara Corporation | Substrate processing apparatus, method of detaching substrate from vacuum suction table of substrate processing apparatus, and method of placing substrate onto vacuum suction table of substrate processing apparatus |
CN107204303A (zh) * | 2016-03-18 | 2017-09-26 | 株式会社斯库林集团 | 基板处理装置 |
CN107403742A (zh) * | 2016-05-18 | 2017-11-28 | 株式会社斯库林集团 | 基板处理装置及基板处理方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006013107A (ja) * | 2004-06-25 | 2006-01-12 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
US9385020B2 (en) | 2011-12-19 | 2016-07-05 | SCREEN Holdings Co., Ltd. | Substrate holding and rotating device, substrate treatment apparatus including the device, and substrate treatment method |
US10192771B2 (en) * | 2015-09-29 | 2019-01-29 | SCREEN Holdings Co., Ltd. | Substrate holding/rotating device, substrate processing apparatus including the same, and substrate processing method |
JP6970515B2 (ja) | 2017-03-08 | 2021-11-24 | 株式会社Screenホールディングス | 基板処理装置 |
JP6514300B2 (ja) * | 2017-10-18 | 2019-05-15 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
-
2018
- 2018-02-13 JP JP2018022893A patent/JP7179466B2/ja active Active
- 2018-12-20 KR KR1020180165807A patent/KR20190098037A/ko not_active IP Right Cessation
- 2018-12-21 CN CN201811574249.8A patent/CN110164791B/zh active Active
- 2018-12-22 US US16/231,399 patent/US11101146B2/en active Active
- 2018-12-22 TW TW107146672A patent/TWI691009B/zh active
-
2021
- 2021-04-13 KR KR1020210047861A patent/KR102366431B1/ko active IP Right Grant
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011035051A (ja) * | 2009-07-30 | 2011-02-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP2012094836A (ja) * | 2010-09-27 | 2012-05-17 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
CN104051305A (zh) * | 2013-03-15 | 2014-09-17 | 大日本网屏制造株式会社 | 基板处理装置 |
CN105378909A (zh) * | 2013-06-18 | 2016-03-02 | 株式会社思可林集团 | 基板保持旋转装置、具有基板保持旋转装置的基板处理装置以及基板处理方法 |
JP2015170772A (ja) * | 2014-03-07 | 2015-09-28 | 株式会社Screenホールディングス | 基板処理装置 |
CN106206367A (zh) * | 2015-05-29 | 2016-12-07 | 株式会社思可林集团 | 基板处理装置 |
JP2017005194A (ja) * | 2015-06-15 | 2017-01-05 | 株式会社Screenホールディングス | 基板処理装置 |
US20170162409A1 (en) * | 2015-12-07 | 2017-06-08 | Ebara Corporation | Substrate processing apparatus, method of detaching substrate from vacuum suction table of substrate processing apparatus, and method of placing substrate onto vacuum suction table of substrate processing apparatus |
CN107204303A (zh) * | 2016-03-18 | 2017-09-26 | 株式会社斯库林集团 | 基板处理装置 |
CN107403742A (zh) * | 2016-05-18 | 2017-11-28 | 株式会社斯库林集团 | 基板处理装置及基板处理方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2019140269A (ja) | 2019-08-22 |
KR20210042891A (ko) | 2021-04-20 |
JP7179466B2 (ja) | 2022-11-29 |
KR20190098037A (ko) | 2019-08-21 |
KR102366431B1 (ko) | 2022-02-23 |
US20190252214A1 (en) | 2019-08-15 |
CN110164791B (zh) | 2024-01-19 |
US11101146B2 (en) | 2021-08-24 |
TW201935594A (zh) | 2019-09-01 |
TWI691009B (zh) | 2020-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9259758B2 (en) | Substrate treatment method and substrate treatment apparatus | |
US10854479B2 (en) | Substrate processing method and substrate processing device | |
KR101523348B1 (ko) | 에칭 방법, 에칭 장치 및 기억 매체 | |
US9412627B2 (en) | Liquid processing method and liquid processing apparatus | |
TWI631640B (zh) | 基板處理方法及基板處理裝置 | |
US10790134B2 (en) | Substrate processing method | |
CN104992897A (zh) | 处理杯清洗方法、基板处理方法以及基板处理装置 | |
CN107851573B (zh) | 基板处理方法以及基板处理装置 | |
US20190035622A1 (en) | Substrate processing method and substrate processing device | |
CN109545654B (zh) | 基板处理方法及基板处理装置 | |
US11121008B2 (en) | Method of processing substrate and substrate processing apparatus | |
CN110164791A (zh) | 基板处理装置 | |
US9889476B2 (en) | Substrate processing apparatus and substrate processing method | |
US20190091733A1 (en) | Substrate processing apparatus and method of processing substrate | |
JP2018037550A (ja) | 基板処理方法 | |
WO2019058876A1 (ja) | 基板処理方法および基板処理装置 | |
KR102315745B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
KR102159929B1 (ko) | 기판 처리 방법 | |
TWI658495B (zh) | 基板處理裝置以及基板處理方法 | |
JP7025873B2 (ja) | 基板処理装置 | |
JP2018142593A (ja) | 基板処理装置及び基板処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |