CN110137184A - 一种阵列基板、显示面板和显示装置 - Google Patents
一种阵列基板、显示面板和显示装置 Download PDFInfo
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract
本发明涉及显示设备技术领域,公开了一种阵列基板、显示面板和显示装置,该阵列基板包括:衬底基板;依次设置于衬底基板上的图案化的薄膜晶体管层、第一钝化层、量子点层、彩色滤光层、平坦层和金属线栅偏光层,其中,量子点层在衬底基板上的正投影位于彩色滤光层在衬底基板上的正投影内。该阵列基板将量子点层和金属线栅偏光层均设置于衬底基板上,且通过彩色滤光层阻挡了制作工艺中对量子点层产生的热影响,实现了通过波长转换的方式提高背光利用率,进而满足了显示需求。
Description
技术领域
本发明涉及显示设备技术领域,特别涉及一种阵列基板、显示面板和显示装置。
背景技术
随着液晶显示产品的发展,液晶面板透过率和色域已经受到瓶颈限制,不得不选用通过波长转换的方式来提高背光利用率,进而满足显示需求。
量子点材料是优秀的波长转换材料,将量子点材料做成光刻胶,形成具有像素级别图案的量子点膜层,可以针对性的将背光转换为该像素所需要的颜色,大幅提高背光利用率。但由于量子点材料的荧光特性,会完全破坏光的偏振状态,因此必须搭配内置偏光片使用。目前效果最好的内置偏光片是金属纳米光栅,金属纳米光栅是通过纳米压印形成掩模图形后刻蚀形成,由于金属纳米光栅是金属材料制作的线栅,如果在上基板彩膜基板制作,金属纳米光栅与下基板中的像素电极之间会形成电场。对于平面转换(In PlaneSwitching,IPS)或高级超维场开关(AdvancedSuper Dimension Switch,ADS)显示模式,该电场会导致液晶显示效率大幅降低,因此需要解决金属纳米光栅在下基板的设计和工艺问题。金属纳米光栅如果设置在下基板,为了实现正常显示,量子点膜层也必须放置在下基板。但是由于量子点材料耐高温性差,因此在正常阵列工艺中存在相容性的问题。
发明内容
本发明提供了一种阵列基板、显示面板和显示装置,上述阵列基板将量子点层和金属线栅偏光层均设置于衬底基板上,且通过彩色滤光层阻挡了制作工艺中对量子点层产生的热影响,实现了通过波长转换的方式提高背光利用率,进而满足了显示需求。
为达到上述目的,本发明提供以下技术方案:
一种阵列基板,包括:
衬底基板;
设置于所述衬底基板上的图案化的薄膜晶体管层;
设置于所述薄膜晶体管层背离所述衬底基板一侧的第一钝化层;
设置于所述第一钝化层背离所述衬底基板一侧、且位于所述阵列基板的显示区域内的量子点层;
设置于所述量子点层背离所述衬底基板一侧的彩色滤光层,所述量子点层在所述衬底基板上的正投影位于所述彩色滤光层在所述衬底基板上的正投影内;
设置于所述第一钝化层背离所述衬底基板一侧和所述彩色滤光层背离所述衬底基板一侧的平坦层;
设置于所述平坦层背离所述衬底基板一侧的金属线栅偏光层。
上述阵列基板包括阵列基板和依次设置于阵列基板上的图案化的薄膜晶体管层、第一钝化层、量子点层、彩色滤光层、平坦层和金属线栅偏光层;其中,量子点层设置于显示区域内,量子点层背离衬底基板一侧设置有彩色滤光层,且彩色滤光层在衬底基板上的正投影覆盖量子点层在衬底基板上的正投影,彩色滤光层和第一钝化层中背离衬底基板的一侧设置有平坦层,平坦层背离衬底基板的一侧设置有金属线栅偏光层;本发明中,将量子点层设置于衬底基板、金属线栅偏光层同样设置于衬底基板但放置在量子点层背离衬底基板的一侧,可以解决量子点层灰阶不易控制和响应时间的问题;采用彩色滤光层在衬底基板上的正投影覆盖量子点层在衬底基板上的正投影的设计,避免由于量子点层耐高温性差而产生相容性的问题,从而实现了通过波长转换的方式来提高背光利用率,进而满足显示需求。
优选地,所述薄膜晶体管层包括驱动晶体管部分和光感补偿晶体管部分,所述驱动晶体管部分包括依次形成于所述衬底基板上的栅极、栅极绝缘层、有源层、源漏极和第二钝化层;所述光感补偿晶体管部分包括依次形成于所述衬底基板上的栅极、栅极绝缘层、有源层、源漏极、钝化层、光电转换器件和偏压电极层。
优选地,所述金属线栅偏光层包括设置于所述平坦层背离所述衬底基板一侧的刻蚀阻挡层、设置于所述刻蚀阻挡层背离所述衬底基板一侧的金属线栅层和设置于所述金属线栅层背离所述衬底基板一侧的保护层。
优选地,所述彩色滤光层在所述衬底基板上的正投影覆盖所述薄膜晶体管层中的沟道部分在所述衬底基板上的正投影。
优选地,还包括设置于所述彩色滤光层与所述薄膜晶体管层之间的黑矩阵层。
优选地,还包括设置于所述薄膜晶体管层中靠近所述衬底基板一侧的公共电极线。
优选地,所述金属线栅偏光层通过贯穿所述金属线栅偏光层、平坦层、第一钝化层和栅极绝缘层的第一过孔及填充于所述第一过孔内的引线与所述公共电极线电连接。
优选地,还包括设置于显示区内且位于所述金属线栅偏光层背离所述衬底基板一侧的像素电极,所述像素电极通过贯穿所述金属线栅偏光层、平坦层和第一钝化层的第二过孔以及填充于所述第二过孔内的引线与所述源漏极电连接。
优选地,所述金属线栅偏光层通过贯穿所述金属线栅偏光层、平坦层的第三过孔以及填充于所述第三过孔内的引线与所述偏压电极层电连接。
本发明还提供一种显示面板,包括上述技术方案中提供的任意一种阵列基板、与所述阵列基板相对设置的彩膜基板和设置于所述阵列基板与所述彩膜基板之间的液晶层。
本发明还提供一种显示装置,包括上述技术方案中提供的显示面板。
附图说明
图1为本发明提供的一种阵列基板的结构示意图;
图2为本发明提供的另一种阵列基板的结构示意图;
图3为本发明提供的一种显示面板的结构示意图。
图标:
1-衬底基板;2-栅极;3-栅极绝缘层;4-有源层;5-源漏极;6-第二钝化层;7-光电转换器件;8-偏压电极层;9-第一钝化层;10-量子点层;11-彩色滤光层;12-平坦层;13-金属线栅偏光层;131-刻蚀阻挡层;132-金属线栅层;133-保护层;14-黑矩阵层;15-公共电极线;16-第一过孔;17-第二过孔;18-第三过孔;19-引线;20-像素电极;21-液晶层;22-彩膜基板。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参考图1,本发明提供一种阵列基板,包括:
衬底基板1;
设置于衬底基板1上的图案化的薄膜晶体管层;
设置于薄膜晶体管层背离衬底基板1一侧的第一钝化层9;
设置于第一钝化层9背离衬底基板1一侧、且位于阵列基板的显示区域内的量子点层10;
设置于量子点层10背离衬底基板1一侧的彩色滤光层11,量子点层10在衬底基板1上的正投影位于彩色滤光层11在衬底基板1上的正投影内;
设置于第一钝化层9背离衬底基板1一侧和彩色滤光层11背离衬底基板1一侧的平坦层12;
设置于平坦层12背离衬底基板1一侧的金属线栅偏光层13。
上述阵列基板包括阵列基板和依次设置于阵列基板上的图案化的薄膜晶体管层、第一钝化层9、量子点层10、彩色滤光层11、平坦层12和金属线栅偏光层13;其中,量子点层10设置于显示区域内,量子点层10背离衬底基板1一侧设置有彩色滤光层11,且彩色滤光层11在衬底基板1上的正投影覆盖量子点层10在衬底基板1上的正投影,彩色滤光层11和第一钝化层9中背离衬底基板1的一侧设置有平坦层12,平坦层12背离衬底基板1的一侧设置有金属线栅偏光层13;本发明中,将量子点层10设置于衬底基板1、金属线栅偏光层13同样设置于衬底基板1但放置在量子点层10背离衬底基板1的一侧,可以解决量子点层10灰阶不易控制和响应时间的问题;采用彩色滤光层11在衬底基板1上的正投影覆盖量子点层10在衬底基板1上的正投影的设计,避免由于量子点层10耐高温性差而产生相容性的问题,从而实现了通过波长转换的方式来提高背光利用率,进而满足显示需求。
上述平坦层12包括位于靠近衬底基板1一侧的热固化平坦层12和位于远离衬底基板1一侧的光固化平坦层12,通过热固化和光固化双层平坦,确保了在通过纳米压印工艺形成金属线栅偏光层13的过程中的良率,以更好地获得金属线栅偏光层13。
具体地,如图1和图2所示,薄膜晶体管层包括驱动晶体管部分和光感补偿晶体管部分,驱动晶体管部分包括依次形成于衬底基板1上的栅极2、栅极绝缘层3、有源层4、源漏极5和第二钝化层6;光感补偿晶体管部分包括依次形成于衬底基板1上的栅极2、栅极绝缘层3、有源层4、源漏极5、第二钝化层6、光电转换器件7和偏压电极层8。
将量子点层10和光感补偿晶体管部分均设置于衬底基板1上,可以实现监测被金属线栅偏光层13反射的像素光线,从而实现对金属线栅偏光层13透过率均匀性的补偿,确保画面均匀性。
具体地,如图1和图2所示,金属线栅偏光层13包括设置于平坦层12背离衬底基板1一侧的刻蚀阻挡层131、设置于刻蚀阻挡层131背离衬底基板1一侧的金属线栅层132和设置于金属线栅层132背离衬底基板1一侧的保护层133。
金属线栅偏光层13采用纳米压印工艺制作而成,其中在金属线栅偏光层13中远离衬底基板1的一侧设置一层保护层133,以保护金属线栅偏光层13在后段制程中不被破坏,并提升透过率;保护层133的材料可以选用氧化硅。
具体地,如图1和图2所示,彩色滤光层11在衬底基板1上的正投影覆盖薄膜晶体管层中的沟道部分在衬底基板1上的正投影。
彩色滤光层11在衬底基板1上的正投影覆盖薄膜晶体管层中的沟道部分在衬底基板1上的正投影,避免在制作金属线栅偏光层13的过程中由于纳米压印工艺和制作光固化平坦层12的过程中的强光影响薄膜晶体管层中驱动晶体管部分和光感补偿晶体管部分的特性。
具体地,如图2所示,还包括设置于彩色滤光层11与薄膜晶体管层之间的黑矩阵层14。
采用本发明的结构和工艺,将量子点层10和光感补偿晶体管置于阵列基板上,其中,量子点层10发光稳定,不受灰阶影响,利于光电转换器件7收集稳定的信号;薄膜晶体管层中驱动晶体管部分在阵列基板上的正投影位于黑矩阵层14与薄膜晶体管层中驱动晶体管部分相对的部分在薄膜晶体管层的正投影内,薄膜晶体管层中光感补偿晶体管部分在阵列基板上的正投影位于黑矩阵层14与薄膜晶体管层中光感补偿晶体管部分相对的部分在薄膜晶体管层的正投影内,可以避免制作光固化平坦层12的过程中的强光影响薄膜晶体管层中驱动晶体管部分和光感补偿晶体管部分的特性;黑矩阵层14还包括设置于光电转换器件7周边区域的部分,以遮蔽光电转换器件7的侧壁;薄膜晶体管层中光感补偿晶体管部分,通过读取被金属线栅偏光层13反射的像素亮度,间接评估金属线栅偏光层13的不均匀性,并反馈信号进行灰阶补偿,通过黑矩阵遮蔽光电转换器件7的侧壁,可以屏蔽其他像素的影响,保证薄膜晶体管层中光感补偿晶体管部分只读取本像素的反射光亮度,实现金属线栅偏光层13均匀性补偿及量子点层10效率衰减的补偿,避免烧屏问题。
具体地,如图1和图2所示,还包括设置于薄膜晶体管层中靠近衬底基板1一侧的公共电极线15。
具体地,如图1和图2所示,金属线栅偏光层13通过贯穿金属线栅偏光层13、平坦层12、第一钝化层9和栅极绝缘层3的第一过孔16及填充于第一过孔16内的引线19与公共电极线15电连接。
金属线栅偏光层13在非显示区通过过孔及设置于过孔中的引线19连接公共电极线15,通过这种方式电连接几乎不影响像素开口率;过孔的开口处在金属线栅偏光层13仅刻蚀保护层133,保留金属线栅层132,确保引线19和金属线栅层132连接。
具体地,如图1和图2所示,还包括设置于显示区内且位于金属线栅偏光层13背离衬底基板1一侧的像素电极20,像素电极20通过贯穿金属线栅偏光层13、平坦层12和第一钝化层9的第二过孔17以及填充于第二过孔17内的引线19与源漏极5电连接。
像素电极20的材质可以选用导电玻璃,采用导电玻璃制作像素电极20时不进行200℃以上高温退火,仅进行100~200℃条件下退火。像素电极20也通过过孔和引线19与源漏极5电连接,连接方式简单。
具体地,如图1和图2所示,金属线栅偏光层13通过贯穿金属线栅偏光层13、平坦层12的第三过孔18以及填充于第三过孔18内的引线19与偏压电极层8电连接。
金属线栅偏光层13同时通过过孔连接偏压电极层8,避免偏压电极走线占用开口率。
具体地,引线19的材料为金属或者导电玻璃。
本发明还提供一种显示面板,如图3所示,包括上述技术方案中提供的阵列基板、与阵列基板相对设置的彩膜基板22和设置于阵列基板与彩膜基板22之间的液晶层21。
本发明还提供一种显示装置,包括上述技术方案中提供的显示面板。
显然,本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。
Claims (11)
1.一种阵列基板,其特征在于,包括:
衬底基板;
设置于所述衬底基板上的图案化的薄膜晶体管层;
设置于所述薄膜晶体管层背离所述衬底基板一侧的第一钝化层;
设置于所述第一钝化层背离所述衬底基板一侧、且位于所述阵列基板的显示区域内的量子点层;
设置于所述量子点层背离所述衬底基板一侧的彩色滤光层,所述量子点层在所述衬底基板上的正投影位于所述彩色滤光层在所述衬底基板上的正投影内;
设置于所述第一钝化层背离所述衬底基板一侧和所述彩色滤光层背离所述衬底基板一侧的平坦层;
设置于所述平坦层背离所述衬底基板一侧的金属线栅偏光层。
2.根据权利要求1所述的阵列基板,其特征在于,所述薄膜晶体管层包括驱动晶体管部分和光感补偿晶体管部分,所述驱动晶体管部分包括依次形成于所述衬底基板上的栅极、栅极绝缘层、有源层、源漏极和第二钝化层;所述光感补偿晶体管部分包括依次形成于所述衬底基板上的栅极、栅极绝缘层、有源层、源漏极、第二钝化层、光电转换器件和偏压电极层。
3.根据权利要求1所述的阵列基板,其特征在于,所述金属线栅偏光层包括设置于所述平坦层背离所述衬底基板一侧的刻蚀阻挡层、设置于所述刻蚀阻挡层背离所述衬底基板一侧的金属线栅层和设置于所述金属线栅层背离所述衬底基板一侧的保护层。
4.根据权利要求1所述的阵列基板,其特征在于,所述彩色滤光层在所述衬底基板上的正投影覆盖所述薄膜晶体管层中的沟道部分在所述衬底基板上的正投影。
5.根据权利要求4所述的阵列基板,其特征在于,还包括设置于所述彩色滤光层与所述薄膜晶体管层之间的黑矩阵层。
6.根据权利要求1所述的阵列基板,其特征在于,还包括设置于所述薄膜晶体管层中靠近所述衬底基板一侧的公共电极线。
7.根据权利要求6所述的阵列基板,其特征在于,所述金属线栅偏光层通过贯穿所述金属线栅偏光层、平坦层、第一钝化层和栅极绝缘层的第一过孔及填充于所述第一过孔内的引线与所述公共电极线电连接。
8.根据权利要求1所述的阵列基板,其特征在于,还包括设置于显示区内且位于所述金属线栅偏光层背离所述衬底基板一侧的像素电极,所述像素电极通过贯穿所述金属线栅偏光层、平坦层和第一钝化层的第二过孔以及填充于所述第二过孔内的引线与所述源漏极电连接。
9.根据权利要求2所述的阵列基板,其特征在于,所述金属线栅偏光层通过贯穿所述金属线栅偏光层、平坦层的第三过孔以及填充于所述第三过孔内的引线与所述偏压电极层电连接。
10.一种显示面板,其特征在于,包括如权利要求1-9任一项所述的阵列基板、与所述阵列基板相对设置的彩膜基板和设置于所述阵列基板与所述彩膜基板之间的液晶层。
11.一种显示装置,其特征在于,包括如权利要求10所述的显示面板。
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