CN105182594B - 显示基板 - Google Patents
显示基板 Download PDFInfo
- Publication number
- CN105182594B CN105182594B CN201510527566.4A CN201510527566A CN105182594B CN 105182594 B CN105182594 B CN 105182594B CN 201510527566 A CN201510527566 A CN 201510527566A CN 105182594 B CN105182594 B CN 105182594B
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- China
- Prior art keywords
- layer
- base plate
- display base
- quantum dot
- metal film
- Prior art date
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- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 3
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
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- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
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- 239000011787 zinc oxide Substances 0.000 description 2
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- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 1
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N urea group Chemical group NC(=O)N XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
- G03F7/2043—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means with the production of a chemical active agent from a fluid, e.g. an etching agent; with meterial deposition from the fluid phase, e.g. contamination resists
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133548—Wire-grid polarisers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Polarising Elements (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
Abstract
一种显示基板,包括衬底基板和偏振层,其中偏振层包括同层设置且材料相同的线栅偏振器和遮光矩阵。该显示基板简化了生产环节,从而降低了成本,并减小了液晶显示装置的厚度。
Description
技术领域
本公开涉及显示技术领域,尤其涉及显示基板。
背景技术
已有的液晶显示装置(LCD)中,遮光矩阵和偏振片一般都是各自单独成为一层,这不但增加了制作成本,而且使得显示器件变厚。
此外,量子点材料已被用来制作液晶显示装置(LCD)中的彩膜基板。量子点是在三个空间方向上把导带电子、价带空穴及激子束缚住的半导体纳米结构。这种约束可以归结于静电势(由外部的电极、掺杂、应变、杂质产生),两种不同半导体材料的界面(例如:在自组量子点中),半导体的表面(例如:半导体纳米晶体),或者以上三者的结合。量子点是一种由II-VI族或III-V族元素组成的纳米颗粒。量子点的粒径一般介于1~10nm之间,由于电子和空穴被量子限域,连续的能带结构变成具有分子特性的分立能级结构,受激后可以发射荧光。基于量子效应,量子点在太阳能电池,发光器件,光学生物标记等领域具有广泛的应用前景。
通常显示领域所采用的白光发光二极管(LED)背光源与普通彩色滤色片配合形成彩色显示光源利用率低,显示器的色域窄。而采用量子点充当彩膜材料,则可以有效提高显示色域。
发明内容
本发明的实施例提供一种显示基板,包括衬底基板和偏振层,
其中所述偏振层包括同层设置且材料相同的线栅偏振器和遮光矩阵。
可选的,所述显示基板为彩膜基板,所述彩膜基板还包括量子点层,以及设置在所述量子点层和所述偏振层之间的平坦层。
可选的,所述显示基板为阵列基板,所述阵列基板还包括阵列排布的薄膜晶体管。
可选的,所述偏振层中的所述线栅偏振器和所述遮光矩阵由同一种金属材料形成。
可选的,所述金属材料选自下述集合:Al、Cu、Au、Ag和Cr。
可选的,所述平坦层由含有极性键的树脂材料形成。
可选的,所述极性键选自下述集合:羟基、羧基、羰基、醚键、异氰酸酯基和氨酯基。
可选的,所述含有极性键的树脂材料选自下述集合:环氧树脂、酚醛树脂、脲醛树脂、丙烯酸树脂、聚乙烯醇、聚氨酯、橡胶、醋酸乙烯及其共聚物、聚苯乙烯及其共聚物、有机硅和环氧酚醛树脂。
可选的,在所述偏振层和所述平坦层之间设置粘接层。
可选的,所述粘接层材料包括ITO和/或IZO。
可选的,所述量子点层的材料选自下述集合:CdS、CdSe、CdTe、ZnO、ZnS、ZnSe、ZnTe、GaAs、GaP、GaSb、HgS、HgSe、HgTe、InAs、InP、InSb、AlAs、AlP、CuInS、CuInSe、AlSb。
可选的,所述显示基板还包括:隔垫物,其中,所述隔垫物设置于所述显示基板上与所述衬底基板相对的一侧。
可选的,所述量子点层包括多个量子点彩色滤光单元。
本发明的实施例还提供一种液晶显示装置,包括如上所述的显示基板。
本发明的实施例还提供一种显示基板的制备方法,包括:
提供衬底基板,在所述衬底基板上沉积金属膜;
处理所述金属膜,形成线栅偏振器和遮光矩阵。
可选的,所述方法包括:
提供衬底基板;
在所述衬底基板上制备图案化的量子点层;
在所述图案化的量子点层上制备平坦层;
在所述平坦层上沉积金属膜;
处理所述金属膜,形成线栅偏振器和遮光矩阵。
可选的,所述处理所述金属膜,形成线栅偏振器和遮光矩阵包括:
在所述金属膜上涂覆抗刻蚀剂;
用模板在所述抗刻蚀剂上压出对应于所述线栅偏振器的结构和所述遮光矩阵的结构;
脱模、去除多余的抗刻蚀剂,以暴露出所述金属膜;
刻蚀金属膜以形成所述线栅偏振器和所述遮光矩阵。
可选的,所述模板的制作方法为:在衬底基板上,用电子束直写技术制作出对应于所述线栅偏振器的结构和所述遮光矩阵的结构。
可选的,所述金属膜的材料包括Al、Cu、Au、Ag和Cr。
可选的,在所述图案化的量子点层上制备平坦层的步骤之后且在沉积所述金属膜之前,还包括:
制备粘接层,然后在所述粘结层之上沉积所述金属膜。
可选的,所述粘接层材料选自ITO或IZO。
附图说明
为了更清楚地说明本发明实施例的技术方案,下面将对实施例的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本发明的一些实施例,而非对本发明的限制。
图1为本发明一实施方式提供的显示基板结构示意图;
图2为本发明另一实施方式提供的显示基板结构示意图;
图3为本发明另一实施方式提供的显示基板结构示意图;
图4(a)-(f)为本发明一实施方式提供的显示基板制造过程示意图;
图5为本发明一实施方式提供的液晶显示装置结构示意图。
附图标记说明:
100、200-衬底基板;101、201-量子点层;1011、2011-红色量子点图案单元;1012、2012-绿色量子点图案单元;1013、2013-蓝色量子点图案单元;102、202-平坦层;103、203-偏振层;1031、2031-线栅偏振器;1032、2032-遮光矩阵;204-粘接层;105-金属膜;106-抗刻蚀剂层;107-模板;108、208-隔垫物;2-阵列基板;3-对置基板(彩膜基板);4-液晶材料;5-背光源;6-封框胶;10-液晶显示装置。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
除非另作定义,本公开所使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“一个”或者“一”等类似词语不表示数量限制,而是表示存在至少一个。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接,而是可以包括电性的连接,不管是直接的还是间接的。
已有的液晶显示装置(LCD)中,遮光矩阵和偏振片一般都是各自单独成为一层,这不但增加了制作成本,而且使得显示器件变厚。
此外,量子点材料已被用来制作液晶显示装置(LCD)中的彩膜基板。但由于量子点受入射光激发发出的荧光是自然光,可以全部透过上偏光片,无法调节灰阶,即将量子点材料制作的彩膜基板应用在液晶显示装置(LCD)上存在退偏问题。这就需要在背光通过液晶之后、激发量子点之前增加一个偏光片,但增加偏光片工艺复杂,还需要增加一张玻璃基板,导致成本的升高。
针对上述问题,本发明的实施例提出了一种制备工艺简单的、将线栅偏振器(Gridpolarizer,GP)和遮光矩阵整合在同一层的显示基板,可应用在LCD中,使得制备工艺变得简单,减小了液晶显示装置的厚度,用作量子点彩膜基板则能够有效提高色域同时解决量子点退偏问题。
下面将结合附图具体说明本发明的实施方式。
如图1所示,本发明的实施例提供一种显示基板,包括衬底基板100和偏振层103,其中所述偏振层103包括同层设置且一体成型的线栅偏振器1031和遮光矩阵1032。
本发明的上述实施例的显示基板通过将线栅偏振器和遮光矩阵整合在同一层,不但简化了制备工艺,而且使得液晶显示装置更加轻薄化。
如图2所示,本发明的实施例提供一种显示基板,包括衬底基板100、量子点层101、偏振层103、设置在所述量子点层101和所述偏振层103之间的平坦层102、设置于所述偏振层103远离所述基板100的一侧的隔垫物108,其中所述偏振层103包括同层设置且一体成型的线栅偏振器1031和遮光矩阵1032。
所述偏振层103中的所述线栅偏振器1031和所述遮光矩阵1032可由同一种材料形成。可选的,所述偏振层103中的所述线栅偏振器1031和所述遮光矩阵1032可由同一种金属材料形成。
所述金属材料可选择本领域常用的金属材料,可以举出的例子如Al、Cu、Au、Ag和Cr,或者这些金属的合金。
在实际使用过程中,需要考虑金属材料的偏振层103与例如高分子材料的平坦层102之间的粘附力。若偏振层103与平坦层102之间的粘附力不够,使用过程中可能造成偏振层103的脱落。因此,为了增加偏振层103与平坦层102之间的粘附力,所述平坦层103可以选择含有较多极性键的树脂材料形成。所述极性键包括羟基、羧基、羰基、醚键、异氰酸酯基和氨酯基。例如,所述含有较多极性键的树脂材料包括环氧树脂、酚醛树脂、脲醛树脂、丙烯酸树脂、聚乙烯醇、聚氨酯、橡胶、醋酸乙烯及其共聚物、聚苯乙烯及其共聚物、有机硅和环氧酚醛树脂。以聚氨酯类树脂材料为例,金属材料表面张力很大,属于高能表面,其表面通常含有吸附水、羟基及其他极性基团,聚氨酯类树脂材料可与吸附水、羟基等活性位点反应形成共价键;同时,聚氨酯类树脂材料中的氨基甲酸酯基、取代脲基等极性基团也会与金属材料表面的极性基团形成第二类化学键;此外,金属材料还能与芳香族聚氨酯中的苯环形成配位键。上述化学键或者配位键的形成,在偏振层103与平坦层102之间形成了有效的连接,从而增强了偏振层103与平坦层102之间的粘附力。
所述量子点层101的材料可以选择本领域常用的量子点材料,例如可以选自下述材料的一种或多种:CdS、CdSe、CdTe、ZnO、ZnS、ZnSe、ZnTe、GaAs、GaP、GaSb、HgS、HgSe、HgTe、InAs、InP、InSb、AlAs、AlP、CuInS、CuInSe、AlSb。量子点的发射光谱可以通过改变量子点的尺寸大小来控制,即将量子点形成为不同尺寸,可以发射不同颜色的光。当然,该量子点的材料包括但并不局限于上述列举出来的几种,具有与上述物质具有相同或相似的其他材料也同样可以适用。以硫化锌(ZnS)量子点为例,发射红光的量子点尺寸主要为约9~10nm,发射黄光量子点尺寸为约8nm,发射绿光的量子点尺寸为约7nm。
所述量子点层101的图案可以根据实际需要进行设置。例如所述量子点层101可以包括红色量子点图案单元1011、绿色量子点图案单元1012和蓝色量子点图案单元1013,所述红色量子点图案单元1011、绿色量子点图案单元1012和蓝色量子点图案单元1013形成分立的红色子像素、绿色子像素和蓝色子像素。当然,所述量子点层101还可以包括其他颜色的量子点图案单元,例如黄色量子点图案单元。
本发明实施例中在偏振层103中同层设置了一体成型的线栅偏振器1031和遮光矩阵1032,无需在背光通过液晶之后、激发量子点之前增加一个偏光片,即解决了将显示基板应用在LCD上退偏的问题。这不但省略了增加偏光片的复杂步骤,简化了生产环节,而且不需要增加玻璃基板,从而降低了成本。
另一种增加偏振层与平坦层之间的粘附力的方式是在所述偏振层和所述平坦层之间进一步设置粘接层。
如图3所示,显示基板包括衬底基板200、量子点层201、偏振层203、设置在所述量子点层201和所述偏振层203之间的平坦层202、设置于所述偏振层203远离所述基板200的一侧的隔垫物208,其中所述偏振层203包括同层设置且一体成型的线栅偏振器2031和遮光矩阵2032。与上一实施例相同的内容将不再赘述。在所述偏振层203和所述平坦层202之间进一步设置粘接层204。所述粘接层204一般用无机材料制作,可以用无机材料例如氧化铟锡(ITO)、氧化铟锌(IZO)等。采用上述材料制备的粘接层204可以很好地同时对金属材料的偏振层203及高分子材料的平坦层202提供足够的粘附力,因而平坦层202可以不需要使用特定的树脂材料,任何本领域常用的平坦层材料均可满足需求。
如图4(a)-(f)所示,本发明的实施例还提供一种显示基板的制备方法。
如图4(a)所示,在基板100上制备量子点层101;在所述量子点层101上制备平坦层102。量子点层101可以是分立的不同颜色的量子点图案单元,如图4(a)示出了分立的3个量子点图案单元1011、1012和1013组成量子点层101。3个量子点图案单元在背光激发下,可以发出不同的光,如图案单元1011发射红光、图案单元1012发射绿光和图案单元1013发射蓝光,从而实现全彩显示。制备量子点层101和平坦层102的方法可以采用本领域通用的方法如涂覆-曝光-显影,此处不再赘述。然后,在所述平坦层102上沉积一层金属膜105。所述金属膜105的材料可选择本领域常用的金属材料,可以举出的例子如Al、Cu、Au、Ag和Cr,或者这些金属的合金。
如图4(b)所示,在所述金属膜105上涂覆抗刻蚀剂,形成抗刻蚀剂层106。抗刻蚀剂可选择本领域用来刻蚀金属的任何常规抗刻蚀剂,本实施例中采用的抗刻蚀剂为聚甲基丙希酸甲酯(PMMA)。
如图4(c)所示,例如对抗刻蚀剂层106进行加热或者紫外光照射,使其软化,用模板107在所述抗刻蚀剂层106上压出对应于所述线栅偏振器的结构和所述遮光矩阵的结构。所述模板107的制作方法例如可以为:在例如SiO2或者Si基板的衬底基板上,用电子束直写技术制作出对应于所述所述线栅偏振器的结构和对应于所述遮光矩阵的结构。
如图4(d)所示,移除模板107,留下了压印上对应于所述线栅偏振器的结构和对应于所述遮光矩阵的结构的抗刻蚀剂层106。
如图4(e)所示,去除多余的抗刻蚀剂,以暴露出所述金属膜105。
如图4(f)所示,刻蚀金属膜,随后清洗,形成所述线栅偏振器1031。金属膜层105则变为集成了所述线栅偏振器1031和所述遮光矩阵1032的所述偏振层103。
本发明的上述实施例采用纳米压印技术将线栅偏振器1031和遮光矩阵1032整合制作在偏振层103上,减少了一次遮光矩阵图案化步骤,简化了制作工艺,减少了成本,同时整合了线栅偏振器1031和遮光矩阵1032的偏振层103可以解决量子点退偏的问题,无需在背光通过液晶之后、激发量子点之前增加一个偏光片,使得发光器件的结构更加简单,同样进一步节约了成本。
对于在偏振层和平坦层之间进一步设置了粘接层的显示基板的制备方法,与上述方法基本相同,只需在制备平坦层之后且在沉积所述金属膜之前,增加一个在平坦层上制备粘接层的步骤,此处不再赘述。
本发明的另一个实施例提供了一种液晶显示装置。如图5所示,该液晶显示装置10包括阵列基板2和与该阵列基板2相对设置自动对置基板3,二者彼此对置以形成液晶盒并通过封框胶6密封,在液晶盒中填充有液晶材料4。该对置基板3为上述任一的彩膜基板。阵列基板2包括像素单元的阵列,每个像素单元的像素电极用于施加电场对液晶材料的旋转的程度进行控制从而进行显示操作。该液晶显示装置10还包括为阵列基板提供背光的背光源5,该背光源5发出的光从阵列基板2一侧进入液晶盒之中,然后从对置基板(彩膜基板)3一侧出射。
该液晶显示装置例如可以实现为液晶面板、电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
以上所述仅是本发明的示范性实施方式,而非用于限制本发明的保护范围,本发明的保护范围由所附的权利要求确定。
Claims (19)
1.一种显示基板,包括衬底基板和偏振层,
其中所述偏振层包括同层设置且材料相同的线栅偏振器和遮光矩阵;所述显示基板为彩膜基板,所述彩膜基板还包括量子点层,以及设置在所述量子点层和所述偏振层之间的平坦层。
2.根据权利要求1所述的显示基板,所述显示基板为阵列基板,所述阵列基板还包括阵列排布的薄膜晶体管。
3.根据权利要求1所述的显示基板,其中,所述偏振层中的所述线栅偏振器和所述遮光矩阵由同一种金属材料形成。
4.根据权利要求3所述的显示基板,其中,所述金属材料选自下述集合:Al、Cu、Au、Ag和Cr。
5.根据权利要求1所述的显示基板,其中,所述平坦层由含有极性键的树脂材料形成。
6.根据权利要求5所述的显示基板,其中,所述极性键选自下述集合:羟基、羧基、羰基、醚键、异氰酸酯基和氨酯基。
7.根据权利要求6所述的显示基板,其中,所述含有极性键的树脂材料选自下述集合:环氧树脂、酚醛树脂、脲醛树脂、丙烯酸树脂、聚乙烯醇、聚氨酯、橡胶、醋酸乙烯及其共聚物、聚苯乙烯及其共聚物、有机硅和环氧酚醛树脂。
8.根据权利要求1所述的显示基板,其中,在所述偏振层和所述平坦层之间设置粘接层。
9.根据权利要求8所述的显示基板,其中,所述粘接层材料包括ITO和/或IZO。
10.根据权利要求1所述的显示基板,其中,所述量子点层的材料选自下述集合:CdS、CdSe、CdTe、ZnO、ZnS、ZnSe、ZnTe、GaAs、GaP、GaSb、HgS、HgSe、HgTe、InAs、InP、InSb、AlAs、AlP、CuInS、CuInSe、AlSb。
11.根据权利要求1所述的显示基板,还包括:隔垫物,其中,所述隔垫物设置于所述显示基板上与所述衬底基板相对的一侧。
12.根据权利要求1所述的显示基板,其中,所述量子点层包括多个量子点彩色滤光单元。
13.一种液晶显示装置,包括权利要求1-12任一项所述的显示基板。
14.一种显示基板的制备方法,包括:
提供衬底基板;
在所述衬底基板上制备图案化的量子点层;
在所述图案化的量子点层上制备平坦层;
在所述平坦层上沉积金属膜;
处理所述金属膜,形成线栅偏振器和遮光矩阵。
15.根据权利要求14所述的方法,其中,所述处理所述金属膜,形成线栅偏振器和遮光矩阵包括:
在所述金属膜上涂覆抗刻蚀剂;
用模板在所述抗刻蚀剂上压出对应于所述线栅偏振器的结构和所述遮光矩阵的结构;
脱模、去除多余的抗刻蚀剂,以暴露出所述金属膜;
刻蚀金属膜以形成所述线栅偏振器和所述遮光矩阵。
16.根据权利要求15所述的方法,其中,所述模板的制作方法为:在衬底基板上,用电子束直写技术制作出对应于所述线栅偏振器的结构和所述遮光矩阵的结构。
17.根据权利要求14所述的方法,其中,所述金属膜的材料包括Al、Cu、Au、Ag和Cr。
18.根据权利要求14所述的方法,在所述图案化的量子点层上制备平坦层的步骤之后且在沉积所述金属膜之前,还包括:
制备粘接层,然后在所述粘接 层之上沉积所述金属膜。
19.根据权利要求18所述的方法,其中,所述粘接层材料选自ITO或IZO。
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