CN110120443A - A kind of preparation method of reversed polarity AlGaInP quaternary LED chip - Google Patents
A kind of preparation method of reversed polarity AlGaInP quaternary LED chip Download PDFInfo
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- CN110120443A CN110120443A CN201810121564.9A CN201810121564A CN110120443A CN 110120443 A CN110120443 A CN 110120443A CN 201810121564 A CN201810121564 A CN 201810121564A CN 110120443 A CN110120443 A CN 110120443A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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Abstract
The present invention relates to a kind of preparation methods of reversed polarity AlGaInP quaternary LED chip, comprising: (1) face P ohmic contact layer, current barrier layer are sequentially prepared on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer；(2) monocrystalline conduction Si substrate or Sapphire Substrate are bonded to；(3) remove GaAs substrate, barrier layer, prepare the face N Ohm contact electrode figure, including regular distribution and pass sequentially through wire electrode figure connection several junior units；(4) the wire electrode figure that 4 junior units are connect with surrounding junior unit electrode pattern is removed；(5) survey is carried out to 4 junior units, several junior unit electrode patterns is combined according to customer demand, do not need to retain the wire electrode figure between junior unit electrode pattern according to electrode pattern size removal after combination, it is higher to shelves rate.
Description
Technical field
The present invention relates to a kind of preparation methods of reversed polarity AlGaInP quaternary LED chip, belong to photoelectron technical field.
Background technique
Illumination new light sources of the LED as 21 century, under same brightness, semiconductor lamp power consumption is only the l/ of ordinary incandescent lamp
10, and the service life can extend 100 times.LED component is cold light source, and light efficiency is high, and operating voltage is low, and power consumption is small, small in size, can
Planar package is easy to develop light and thin type product, and the firm in structure and service life is very long, the harmful substances such as not mercurous, lead of light source itself, nothing
Infrared and ultraviolet pollution will not be generated in production and use to extraneous pollution.Therefore, semiconductor lamp have energy-saving and environmental protection,
The features such as service life is long, as transistor substitutes electron tube, semiconductor lamp substitutes traditional incandescent lamp and fluorescent lamp, also will be
Trend of the times.No matter from the angle saved electric energy, reduce greenhouse gas emission, or from the angle to reduce environmental pollution, LED makees
All there is the very high potential of substitution conventional illumination sources for novel illumination light source.
AlGaInP material system is initially the laser diode for being used to manufacture visible light, first by Japanese researchers
It is proposed in middle 1980s.LED the and LD device in that period, it is usually used matched with GaAs substrate
Ga0.5In0.5P is answered in quaternary laser pen and DVD, player extensively as active light emitting area, emission wavelength 650nm
With.Later, researcher's discovery introduced Al component in GaInP can further shorten emission wavelength, still, if Al content
It is excessively high sharply to decline the luminous efficiency that will lead to device, because AlGaInP will when the Al content in GaInP is more than 0.53
Become indirect band-gap semiconductor, so AlGaInP material generally only is used to prepare the LED component of emission wavelength 570nm or more.
1997, the AlGaInP base LED of first multiple quantum wells (MQW) compound Bragg mirror (DBR) structure was born in the world,
LED component based on the design of such structure still occupies the very big share of LED low-end market so far.
Reversed polarity AlGaInP quaternary LED chip is widely used in high-power red-light LED field of display screen, antipole at this stage
Property i.e. carry out substrate displacement, the biggish GaAs substrate of extinction is replaced into monocrystalline conduction Si substrate or Sapphire Substrate etc., because instead
Polarity process flow is longer, cause at this stage reversed polarity chip output it is not high always to shelves rate, output is not high to antipole to shelves rate
The producing and selling of property chip and profit have a great impact, and how effectively to improve reversed polarity chip output at this stage to shelves rate
As main research direction.
Chinese patent literature CN104518056A discloses a kind of preparation method of reversed polarity AlGaInP red LED chip,
Include the following steps: (1) by the chip of GaAs substrate LED together with wafer bonding；(2) corrode GaAs substrate, it will
Chip vertically rotates 180 degree, continues to corrode；(3) after the completion of GaAs substrate etching, the remaining gold of Waffer edge is struck off
Belong to film layer；(4) wafer surface is rinsed well；Corroded using barrier layer of the sulfuric acid solution to wafer surface；(5) in chip
To sticking the area ratio alignment high-temperature plastic tape big to board marker at board marker；(6) steaming of N-type metal electrode is then carried out
Plating, uses window corrosive liquid corrosion window；Obtained after etching clearly alignment to board marker figure.It is first true in the patent
Recognize and carry out operation after relative dimensions again, because reversed polarity AlGaInP quaternary LED chip manufacturing process is longer, causes technique unstable
A possibility that it is bigger, final output is slightly lower to shelves rate.
Summary of the invention
In view of the deficiencies of the prior art, the present invention a kind of simple flow is provided, largely promotes output to shelves rate and
The preparation method of stable reversed polarity AlGaInP quaternary LED chip.
The technical solution of the present invention is as follows:
A kind of preparation method of reversed polarity AlGaInP quaternary LED chip, comprising:
(1) face P ohmic contact layer, current blocking are sequentially prepared on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer
Layer；The reversed polarity AlGaInP quaternary LED epitaxial wafer by it is lower from it is upper successively include GaAs substrate, barrier layer, opaque extension
Layer, AlGaInP layers of N-type, reversed polarity quaternary LED epitaxial layer；
(2) by the wafer bonding of step (1) generation to monocrystalline conduction Si substrate or Sapphire Substrate；
(3) the GaAs substrate, the barrier layer are removed, Ohmic contact electricity in the face N is prepared on the opaque epitaxial layer
Pole figure shape, the face the N Ohm contact electrode figure include regular distribution and pass sequentially through the several small of wire electrode figure connection
Unit；4 junior units therein are located in concentric circles on four intersection points of any two vertical diameters and the concentric circles, described
Concentric circles is the concentric circles of epitaxial wafer；
(4) the wire electrode figure that 4 junior units are connect with surrounding junior unit is removed；
(5) in use, carrying out a survey to 4 junior units, by measured data to mark customer demand, according to client's need
It asks and combines several junior units, needed to remove the wire electrode figure between the junior unit for not needing to retain according to combination, be made
To the higher reversed polarity AlGaInP quaternary LED chip of shelves rate.
In the prior art, reversed polarity AlGaInP quaternary LED chip is all to carry out operation again after first confirming relative dimensions,
Because reversed polarity AlGaInP quaternary LED chip manufacturing process is longer, a possibility that causing technique unstable bigger, final output pair
Shelves rate is slightly lower, and the present invention manufactures the junior unit electrode pattern connected, passes through a photoelectric parameter for survey junior unit electrode pattern
Junior unit is combined according to customer demand, chip entire in this way obtains promotion by a relatively large margin to shelves rate, obtains higher
To the reversed polarity AlGaInP quaternary LED chip of shelves rate.
Preferred according to the present invention, the concentric diameter of a circle is the diameter of 1/2 epitaxial wafer.
Preferred according to the present invention, the width of the wire electrode figure is 8-15 μm.
It is further preferred that the width of the wire electrode figure is 8 μm.
The selection of wire electrode graphic width is not only able to achieve the conducting of electric current, but also since its occupied area is smaller, right
The luminous efficiency of chip influences smaller.
Preferred according to the present invention, the spacing between the two neighboring junior unit center is 80-150 μm.
It is further preferred that the spacing between the two neighboring junior unit center is 100 μm.
The selection of spacing between two neighboring junior unit center can need according to Client application and be unable to application chip reality
Border size, this spacing can be applied more by the combination of different junior units.
It is preferred according to the present invention, the step (4), comprising:
A, on the face the N Ohm contact electrode figure made from step (3), roughening is completed by conventional lithographic, corrosion is cut
Slot；
B, the threadiness electricity that 4 junior units are connect with surrounding junior unit is removed by conventional lithographic, metal erosion method
Pole figure shape.Preferred according to the present invention, the width (the distance between two neighboring junior unit) of the cutting groove is 8-15 μm.
The cutting groove width value neither influences subsequent cutting, and the smaller light extraction efficiency for not influencing chip of occupied area.
Preferred according to the present invention, the step (3) prepares the face N Ohm contact electrode on the opaque epitaxial layer
Figure, comprising:
A, by electron beam evaporation plating mode, the GeAu that a layer thickness is 1-1.8 μm is deposited on the opaque epitaxial layer
Film；GeAu film can preferably form the face N Ohmic contact；GeAu Film thickness values can guarantee that chip is applied to different field, Bu Huiyin
Chip is impacted for size of current.
B, positive photoresist is applied in the GeAu film surface；
C, the face N Ohm contact electrode figure is obtained by optical graving on the positive photoresist surface；
D, removal positive photoresist to get.
It is further preferred that the step B, applies the positive photoresist with a thickness of 2-3.6 μm in the GeAu film surface.
The invention has the benefit that
1, the junior unit that present invention manufacture connects, by a photoelectric parameter for survey junior unit, according to customer demand pair
Junior unit is combined, and chip entire in this way obtains promotion by a relatively large margin to shelves rate, obtains the higher reversed polarity to shelves rate
AlGaInP quaternary LED chip.
2, operation of the present invention is easy and can obtain higher chip to shelves rate, is suitble to large-scale production.
Detailed description of the invention
Fig. 1 is reversed polarity AlGaInP quaternary LED chip legend one produced by the present invention；
Fig. 2 is reversed polarity AlGaInP quaternary LED chip legend two produced by the present invention；
Fig. 3 is the schematic diagram of step of the present invention (4) removal wire electrode figure obtained；
Specific embodiment
The present invention is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment 1
A kind of preparation method of reversed polarity AlGaInP quaternary LED chip, comprising:
(1) face P Ohmic contact is sequentially prepared on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer by conventional method
Layer, current barrier layer；Reversed polarity AlGaInP quaternary LED epitaxial wafer by it is lower from it is upper successively include GaAs substrate, barrier layer GaInP,
Opaque epitaxial layer, AlGaInP layers of N-type, reversed polarity quaternary LED epitaxial layer；
(2) wafer bonding generated step (1) by conventional bonding technology is to monocrystalline conduction Si substrate or sapphire
Substrate；
(3) GaAs substrate is removed using routine GaAs substrate etching corrosion, is eroded using conventional GaInP corrosive liquid outer
The barrier layer GaInP for prolonging growth prepares the face N Ohm contact electrode figure, the face N Ohm contact electrode figure on opaque epitaxial layer
Shape includes regular distribution and several junior units for passing sequentially through the connection of wire electrode figure；4 junior units therein are located at concentric
In circle on four intersection points of any two vertical diameters and the concentric circles, concentric circles is the concentric circles of epitaxial wafer；Concentric circles
Diameter is the diameter of 1/2 epitaxial wafer.Include:
A, by electron beam evaporation plating mode, the GeAu film that a layer thickness is 1-1.8 μm is deposited on opaque epitaxial layer；
GeAu film can preferably form the face N Ohmic contact；GeAu Film thickness values can guarantee that chip is applied to different field, will not be because of electricity
It flows size and chip is impacted.
B, the positive photoresist that a layer thickness is 2-3.6 μm is applied in GeAu film surface；
C, the face N Ohm contact electrode figure is obtained by optical graving on positive photoresist surface；
D, removal positive photoresist to get.As shown in Figure 1, 2.
(4) the wire electrode figure that 4 junior units are connect with surrounding junior unit is removed；Include:
A, on the face the N Ohm contact electrode figure made from step (3), roughening is completed by conventional lithographic, corrosion is cut
Slot；
B, the threadiness electricity that 4 junior units are connect with surrounding junior unit is removed by conventional lithographic, metal erosion method
Pole figure shape.As shown in Figure 3.
(5) in use, carrying out a survey to 4 junior units, by measured data to mark customer demand, according to customer demand group
Several junior units are closed, is needed to remove the wire electrode figure between the junior unit for not needing to retain according to combination, is made to shelves
The higher reversed polarity AlGaInP quaternary LED chip of rate.
The parameters for obtaining the reversed polarity AlGaInP quaternary LED chip of various combination are as shown in table 1.
Table 1
| The junior unit period (μm) | Spot light-metering intensity (mcd) | Small-power combines (a) | Middle power combination (a) | High power combination (a) |
| 80 | 70-80 | 2 or 3 | 4*4 | 10*10 |
| 100 | 100-110 | 2 or 3,4 | 3*3、4*4、3*4 | 7*8、8*8、8*9 |
Embodiment 2
According to a kind of preparation method of reversed polarity AlGaInP quaternary LED chip described in embodiment 1, which is characterized in that phase
Pitch period between adjacent two junior unit centers is 80-150 μm.The width of wire electrode figure is 8-15 μm.
Comparative example 1
The preparation method of reversed polarity AlGaInP quaternary LED chip in the prior art, comprising:
(1) size of reversed polarity AlGaInP quaternary LED chip is confirmed according to the market demand, and puts into antipole according to demand
Property AlGaInP quaternary LED epitaxial wafer, successively makes on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer by conventional method
The standby face P ohmic contact layer, current barrier layer；Reversed polarity AlGaInP quaternary LED epitaxial wafer is successively served as a contrast including GaAs by lower from upper
Bottom, barrier layer GaInP, opaque epitaxial layer, AlGaInP layers of N-type, reversed polarity quaternary LED epitaxial layer；
(2) wafer bonding generated step (1) by conventional bonding technology is to monocrystalline conduction Si substrate or sapphire
Substrate；
(3) GaAs substrate is removed using routine GaAs substrate etching corrosion, is eroded using conventional GaInP corrosive liquid outer
The barrier layer GaInP for prolonging growth prepares the face N Ohm contact electrode figure on opaque epitaxial layer；The face N ohmic contact layer electrode
Dimension of picture step (1) has confirmed that.
(4) on the face the N Ohm contact electrode figure made from step (3), roughening is completed by conventional lithographic, corrosion is cut
Slot, reversed polarity AlGaInP quaternary LED epitaxial wafer has been divided into the reversed polarity by step (1) confirmation size by cutting groove at this time
AlGaInP quaternary LED chip；
(5) survey is carried out to the reversed polarity AlGaInP quaternary LED chip of step (4) preparation, by measured data and to shelves
It is required that being sorted to chip, the gear to accord with the demands of the market is sold, it is incongruent to persist in factory.
It is anti-made from reversed polarity AlGaInP quaternary LED chip made from embodiment 1 and comparative example 1 under same customer requirement
Polarity AlGaInP quaternary LED chip it is as shown in table 2 to the time of shelves rate, cost:
Table 2
Claims (10)
1. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip characterized by comprising
(1) face P ohmic contact layer, current barrier layer are sequentially prepared on the face P of reversed polarity AlGaInP quaternary LED epitaxial wafer；Institute
State reversed polarity AlGaInP quaternary LED epitaxial wafer by it is lower from it is upper successively include GaAs substrate, barrier layer, opaque epitaxial layer, N-type
AlGaInP layers, reversed polarity quaternary LED epitaxial layer；
(2) by the wafer bonding of step (1) generation to monocrystalline conduction Si substrate or Sapphire Substrate；
(3) the GaAs substrate, the barrier layer are removed, the face N Ohm contact electrode figure is prepared on the opaque epitaxial layer
Shape, the face the N Ohm contact electrode figure include regular distribution and several junior units for passing sequentially through the connection of wire electrode figure；
4 junior units therein are located in concentric circles on four intersection points of any two vertical diameters and the concentric circles, described concentric
Circle is the concentric circles of epitaxial wafer；
(4) the wire electrode figure that 4 junior units are connect with surrounding junior unit is removed；
(5) in use, carrying out a survey to 4 junior units, by measured data to mark customer demand, according to customer demand group
Several junior units are closed, is needed to remove the wire electrode figure between the junior unit for not needing to retain according to combination, antipole is made
Property AlGaInP quaternary LED chip.
2. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip according to claim 1, which is characterized in that institute
State the diameter that concentric diameter of a circle is 1/2 epitaxial wafer.
3. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip according to claim 1, which is characterized in that institute
The width for stating wire electrode figure is 8-15 μm.
4. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip according to claim 1, which is characterized in that institute
The width for stating wire electrode figure is 8 μm.
5. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip according to claim 1, which is characterized in that phase
Spacing between adjacent two junior unit centers is 80-150 μm.
6. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip according to claim 1, which is characterized in that phase
Spacing between adjacent two junior unit centers is 100 μm.
7. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip according to claim 1, which is characterized in that institute
State step (4), comprising:
A, on the face the N Ohm contact electrode figure made from step (3), roughening, corrosion cutting groove are completed by photoetching；
B, the wire electrode figure that 4 junior units are connect with surrounding junior unit is removed by photoetching, metal erosion method.
8. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip according to claim 7, which is characterized in that institute
The width for stating cutting groove is 8-15 μm.
9. the preparation method of -8 any a kind of reversed polarity AlGaInP quaternary LED chips according to claim 1, feature
It is, the step (3), the face N Ohm contact electrode figure is prepared on the opaque epitaxial layer, comprising:
A, by electron beam evaporation plating mode, the GeAu film that a layer thickness is 1-1.8 μm is deposited on the opaque epitaxial layer；
B, positive photoresist is applied in the GeAu film surface；
C, the face N Ohm contact electrode figure is obtained by optical graving on the positive photoresist surface；
D, removal positive photoresist to get.
10. a kind of preparation method of reversed polarity AlGaInP quaternary LED chip according to claim 9, which is characterized in that
The step B applies the positive photoresist with a thickness of 2-3.6 μm in the GeAu film surface.
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