CN110120341B - 半导体器件的制造方法、衬底处理装置及记录介质 - Google Patents

半导体器件的制造方法、衬底处理装置及记录介质 Download PDF

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CN110120341B
CN110120341B CN201810183246.5A CN201810183246A CN110120341B CN 110120341 B CN110120341 B CN 110120341B CN 201810183246 A CN201810183246 A CN 201810183246A CN 110120341 B CN110120341 B CN 110120341B
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space
pressure
processing
substrate
gas
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CN110120341A (zh
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镰仓司
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Kokusai Electric Corp
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Abstract

本发明涉及半导体器件的制造方法、衬底处理装置及记录介质。提供相对于纵横比高的深槽仍能在底部形成薄膜的技术。经由衬底搬入搬出口将具有深槽的衬底搬入搬送空间，将衬底移动至处理空间，在处理空间与搬送空间连通、在处理空间内存在衬底的状态下，向处理空间供给第一处理气体并形成第一压力，在深槽中形成前体，并向搬送空间供给非活性气体，使搬送空间的压力与第一压力的压力差成为规定范围，然后在处理空间与所述搬送空间连通、在处理空间内存在衬底的状态下，向处理空间供给第二处理气体以形成比第一压力高的第二压力，将形成于深槽的前体改质并形成薄膜，并向搬送空间供给非活性气体，将搬送空间的压力与第二压力的压力差维持在规定范围。

Description

半导体器件的制造方法、衬底处理装置及记录介质
技术领域
本发明涉及半导体器件的制造方法、衬底处理装置及记录介质。
背景技术
近年来，形成在半导体器件中的图案具有微细化的趋势。例如在专利文献1中，在形成于衬底的深槽的表面上形成薄膜。
专利文献1：日本特开2017－69407
发明内容
发明要解决的课题
随着半导体器件的微细化，深槽的纵横比具有变高的趋势。因此，在深槽的底部形成薄膜是困难的。
本发明的目的在于，提供一种即便相对于纵横比高的深槽，仍能够在底部形成薄膜的技术。
用于解决课题的手段
根据一个方式，经由衬底搬入搬出口将具有深槽的衬底搬入搬送空间，将所述衬底移动至处理空间，在所述处理空间与所述搬送空间连通、在所述处理空间内存在所述衬底的状态下，向所述处理空间供给第一处理气体并形成第一压力，在所述深槽中形成前体，并且，向所述搬送空间供给非活性气体，使所述搬送空间的压力与所述第一压力的压力差成为规定范围，然后，在所述处理空间与所述搬送空间连通、在所述处理空间内存在所述衬底的状态下，向所述处理空间供给第二处理气体从而形成比第一压力高的第二压力，将形成于所述深槽的所述前体改质并形成薄膜，并且向所述搬送空间供给非活性气体，将所述搬送空间的压力与所述第二压力的压力差维持在所述规定范围。
发明效果
能够提供一种即便相对于纵横比高的深槽，仍能够在底部形成薄膜的技术。
附图说明
图1：为说明衬底处理装置的说明图。
图2：为说明衬底处理装置的控制器的说明图。
图3：为说明晶片的处理状态的说明图。
图4：为说明晶片的处理状态的说明图。
图5：为说明晶片的处理状态的说明图。
图6：为说明晶片的处理状态的说明图。
图7：为说明半导体器件的制造流程的说明图。
图8：为说明制造流程与处理空间、搬送空间中的压力的关系的说明图。
附图标记说明
100晶片(衬底)
102绝缘膜
103牺牲膜
106空孔
111空隙
200衬底处理装置
具体实施方式
使用图1，对在深槽中形成薄膜的衬底处理装置200的一例进行说明。
(腔室)
首先，说明腔室。衬底处理装置200具有腔室202。腔室202以例如横截面呈圆形且扁平的密闭容器的形式构成。另外，腔室202由例如铝(Al)、不锈钢(SUS)等金属材料构成。在腔室202内形成有对作为衬底的硅晶片等晶片100进行处理的处理空间205、和在将晶片100向处理空间205搬送时供晶片100通过的搬送空间206。腔室202由上部容器202a和下部容器202b构成。上部容器202a和下部容器202b之间设置分隔板208。
在下部容器202b的侧面设有与闸阀149邻接的衬底搬入搬出口148，晶片100经由衬底搬入搬出口148而在下部容器202b与未图示的真空搬送室之间移动。在下部容器202b的底部，设有多个提升销207。此外，下部容器202b接地。
构成处理空间205的处理室由例如后述的衬底载置台212和簇射头230构成。在处理空间205内，设置有支承晶片100的衬底支承部210。衬底支承部210主要具有：载置晶片100的衬底载置面211；在表面具有衬底载置面211的衬底载置台212；和内置于衬底载置台212的作为加热源的加热器213。在衬底载置台212内，供提升销207贯穿的贯穿孔214分别设置于与提升销207对应的位置。在加热器213上，连接有对加热器213的温度进行控制的温度控制部220。
衬底载置台212被轴217支承。轴217的支承部贯穿设置于腔室202的底壁的孔215，进而经由支承板216而在腔室202的外部连接于升降机构218。通过使升降机构218工作从而使轴217及衬底载置台212升降，从而能够使载置于衬底载置面211上的晶片100升降。需要说明的是，轴217下端部的周围被波纹管219覆盖。腔室202内被气密地保持。
当晶片100搬送时，衬底载置台212下降至衬底载置面211与衬底搬入搬出口148相对的位置，当晶片100处理时，如图1所示，上升至晶片100处于处理空间205内的处理位置。
具体而言，当使衬底载置台212下降至晶片搬送位置时，提升销207的上端部从衬底载置面211的上表面突出，以使得提升销207从下方支承晶片100。另外，当使衬底载置台212上升至晶片处理位置时，提升销207从衬底载置面211的上表面埋没，以使得衬底载置面211从下方支承晶片100。
在处理空间205的上部(上游侧)，设置有簇射头230。簇射头230具有盖231。盖231具有凸缘232，凸缘232被支承于上部容器202a上。此外，盖231具有定位部233。定位部233卡合于上部容器202a，从而将盖231固定。
簇射头230具有缓冲空间234。缓冲空间234称为由盖231和定位部232构成的空间。缓冲空间234与处理空间205连通。被供给至缓冲空间234的气体在缓冲空间内232扩散，被均匀地供给至处理空间205。这里，以缓冲空间234与处理空间205为不同结构的形式进行了说明，但不限于此，也可以将缓冲空间234包括在处理空间205中。
处理空间205主要由上部容器202a、衬底处理位置处的衬底载置台212的上部构造构成。将构成处理空间205的构造称为处理室。需要说明的是，处理室只要是构成处理空间205的构造即可，当然不限于上述构造。
搬送空间206主要由下部容器202b、衬底处理位置处的衬底载置台212的下部构造构成。将构成搬送空间206的构造称为搬送室。搬送室配置于处理室的下方。需要说明的是，搬送室只要是构成搬送空间205的构造即可，当然不限于上述构造。
(气体供给部)
接下来，说明气体供给部。在共用气体供给管242上，连接有第一气体供给管243a、第二气体供给管244a、第三气体供给管245a。另外，在下部容器202b上，连接有第四气体供给管248a。
从包含第一气体供给管243a的第一气体供给系统243，主要供给第一处理气体，从包含第二气体供给管244a的第二气体供给系统244主要供给第二处理气体。从包含第三气体供给管245a的第三气体供给系统245供给非活性气体。从包含第四气体供给管248a的第四气体供给系统248供给非活性气体。
(第一气体供给系统)
在第一气体供给管243a上，从上游方向起依次设置有第一气体供给源243b、作为流量控制器(流量控制部)的质量流量控制器(MFC)243c、及作为开闭阀的阀243d。
从第一气体供给管243a，经由质量流量控制器243c、阀243d、共用气体供给管242而向簇射头230供给包含第一元素的气体(以下，称为“第一处理气体”)。
第一处理气体为原料气体、即处理气体之一。这里，第一元素为例如硅(Si)。即，第一处理气体为例如含硅气体。具体而言，作为含硅气体，可使用二氯硅烷(SiH2Cl2。也称为DCS。)气体。
在第一气体供给管243a的比阀243d靠下游侧，连接有第一非活性气体供给管246a的下游端。在第一非活性气体供给管246a上，从上游方向起依次设置有非活性气体供给源246b、作为流量控制器(流量控制部)的质量流量控制器(MFC)246c、及作为开闭阀的阀246d。
这里，非活性气体为例如氮(N2)气体。作为原料气体的载气或稀释气体而发挥作用。
主要由第一气体供给管243a、质量流量控制器243c、阀243d构成第一处理气体供给系统243(也称为含硅气体供给系统)。
另外，主要由第一非活性气体供给管246a、质量流量控制器246c及阀246d构成第一非活性气体供给系统。需要说明的是，也可考虑将非活性气体供给源246b、第一气体供给管243a包含在第一非活性气体供给系统中。
此外，也可考虑将第一气体供给源243b、第一非活性气体供给系统包含在第一处理气体供给系统243中。
(第二气体供给系统)
在第二气体供给管244a的上游，从上游方向起依次设置有反应气体供给源244b、作为流量控制器(流量控制部)的质量流量控制器(MFC)244c、及作为开闭阀的阀244d。在使反应气体成为等离子体状态的情况下，在阀244d的下游设置远程等离子体单元(RPU)244e。
另外，从第二气体供给管244a经由MFC244c、阀244d、共用气体供给管242，向簇射头230内供给反应气体。在使反应气体成为等离子体状态的情况下，利用RPU244e形成等离子体状态，并将其照射至晶片100上。
反应气体为处理气体之一，为例如氧气体。作为氧气体，可使用例如氧(O2)气体。
主要由第二气体供给管244a、MFC244c、阀244d构成反应气体供给系统244。需要说明的是，也可以考虑反应气体供给系统244包含反应气体供给源244b、RPU244e、后述第二非活性气体供给系统。
在第二气体供给管244a的比阀244d靠下游侧，连接有第二非活性气体供给管247a的下游端。在第二非活性气体供给管247a上，从上游方向起依次设置有非活性气体供给源247b、作为流量控制器(流量控制部)的质量流量控制器(MFC)247c、及作为开闭阀的阀247d。另外，从第二非活性气体供给管247a经由MFC247c、阀247d、第二气体供给管244a、RPU244e向簇射头230内供给非活性气体。
非活性气体作为反应气体的载气或稀释气体发挥作用。具体而言，可使用例如氮(N2)气体。
主要由第二非活性气体供给管247a、MFC247c、及阀247d构成第二非活性气体供给系统。需要说明的是，可考虑第二非活性气体供给系统包含非活性气体供给源247b、第二气体供给管243a、RPU244e。另外，第二非活性气体供给系统可考虑包含在第二气体供给系统244中。
(第三气体供给系统)
在第三气体供给管245a上，从上游方向起依次设置有第三气体供给源245b、作为流量控制器(流量控制部)的质量流量控制器(MFC)245c、及作为开闭阀的阀245d。
从第三气体供给管245a经由质量流量控制器245c、阀245d、共用气体供给管242而向簇射头230供给作为吹扫气体的非活性气体。非活性气体为例如氮(N2)气体。
主要由第三气体供给管245a、质量流量控制器245c、阀245d构成第三气体供给系统245。
从非活性气体供给源245b供给的非活性气体在衬底处理工序中作为对残留在腔室202、簇射头230内的气体进行吹扫的吹扫气体而发挥作用。
主要将第一气体供给系统243、第二气体供给系统244、第三气体供给系统245总称为处理气体供给部。需要说明的是，处理气体供给部只要是向处理空间供给处理气体的构成即可，根据工艺，可以是表示第一气体供给系统243、第二气体供给系统244、第三气体供给系统245中的任一者、或者它们一部分的组合。
(第四气体供给系统)
在第四气体供给管248a上，从上游方向起依次设置有第四气体供给源248b、作为流量控制器(流量控制部)的质量流量控制器(MFC)248c、及作为开闭阀的阀248d。
从第四气体供给管248a，经由质量流量控制器248c、阀248d而向搬送空间206供给作为吹扫气体的非活性气体。非活性气体为例如氮(N2)气体。
主要由第四气体供给管248a、质量流量控制器248c、阀248d构成第四气体供给系统248。第四气体供给系统248也称为向搬送室206供给非活性气体的非活性气体供给部。
这里，近年来，随着器件特性改善、新膜种的采用，要求于低温使气体反应从而进行成膜。这是由于，若于高温进行处理，则存在对已经形成的膜产生不良影响的情况。
这里，作为形成高品质膜的方法，存在使用具有稳定元素的气体的方法，但是，反应所需温度较高，因此，存在不满足低温要求的问题。
另一方面，作为于低温形成高品质膜的方法，存在使用等离子体的方法。就本实施方式而言，在处理空间205内设置供给电力的构造，通过该电力使被供给至处理空间205的气体成为等离子体状态。通过这种方法也能够实现低温，但会成为高能量，在深槽上促进CVD反应。因而，存在这样的问题：在气体侵入深槽的深部之前就在表面上形成膜，结果，无法在深部形成膜。
因此，作为第一处理气体，使用于低温容易分解的气体。另外，作为第二处理气体，使用能够于低温进行分解的气体或使用远程等离子体单元244e生成低能量的等离子体状态的气体。此外，如后文所述，当供给第二处理气体时，使处理空间205成为高压。由此，能够使第一处理气体、第二处理气体达到深槽的底部。
(排气部)
将腔室202的气氛排气的排气系统主要由将处理空间205的气氛排气的处理空间排气系统261、将搬送空间206的气氛排气的搬送空间排气系统262构成。
处理空间排气系统261具有连接于处理空间205的排气管(第一排气管)261a。排气管261以与处理空间205连通的方式设置。在排气管261上，设置将处理空间205内控制为规定压力的作为压力控制器的APC(Auto Pressure Controller)261c、对处理空间205的压力进行测定的第一压力检测部261d。APC261c具有能够调节开度的阀体(未图示)，根据来自后述控制器280的指示来调节排气管261的流导。另外，在排气管262中的APC261c的上游侧设置阀261b。将排气管262和阀261b、APC261c、第一压力检测部261d统称为处理室排气系统261。
搬送空间排气系统262具有连接于搬送空间206的排气管(第二排气管)262a。排气管262a设置于构成搬送空间206的下部容器202b的侧面或底面。在排气管262上，设置有将搬送空间206内控制为规定压力的作为压力控制器的APC262c。需要说明的是，也可以在排气管262上设置泵262e(TMP。Turbo Molecular Pump)。在排气管262a中的泵262e的上游侧，设置作为搬送空间用排气阀的阀262b。此外，在排气管262a上，设置有检测搬送空间206的压力的第二压力检测部262d。将排气管261和APC262c、阀262b、第二压力检测部262d统称为搬送室排气系统262。也可在搬送室排气系统262中包括泵262e。
在排气管261、排气管262的下游侧，连接排气管(第三排气管)264。在排气管264上设置DP(Dry Pump。干泵)278。如图所示，在排气管264上从其上游侧起连接排气管262、排气管261，此外，在它们的下游设置DP278。DP278分别经由排气管262、排气管261而分别将处理空间205及搬送空间206各自的气氛排气。另外，DP278在TMP265工作时也作为TMP265的辅助泵而发挥功能。即，作为高真空(或者超高真空)泵的TMP262e由于单独难以进行直至大气压水平的排气，因此，使用DP278作为辅助泵。在上述排气系统的各阀上使用例如空气阀。
(控制器)
衬底处理装置200具有控制衬底处理装置200的各部动作的控制器280。如图2所示，控制器280至少具有运算部(CPU)280a、临时存储部(RAM)280b、存储部280c、发送接收部280d。控制器280通过发送接收部280d连接于衬底处理装置200的各个构成，根据上位控制器、使用者的指令从存储部280c调出程序、制程，根据其内容控制各构成的动作。需要说明的是，控制器280可以作为专用的计算机而构成，也可以作为通用的计算机而构成。例如，准备储存有上述程序的外部存储装置(例如，磁带、软盘或硬盘等磁盘、CD或DVD等光盘、MO等光磁盘、USB存储器(USB Flash Drive)或存储卡等半导体存储器)282，通过用外部存储装置282将程序安装到通用的计算机中，能够构成本实施方式涉及的控制器280。此外，用于向计算机供给程序的手段不限于通过外部存储装置282进行供给的情况。例如，可以用网络或专用线路等通信手段，也可以通过发送接收部283从上位装置270接收信息，而不通过外部存储装置282供给程序。另外，还可以用键盘、触摸面板等输入输出装置281对控制器280发出指令。
需要说明的是，存储部280c、外部存储装置282构成为计算机可读取的记录介质。以下，亦将这些简单地统称作记录介质。需要说明的是，本说明书中使用了记录介质这一用语时，既有仅单独包括存储部280c的情况，也有仅单独包括外部存储装置282的情况，另外，还有包括上述二者的情况。
(半导体器件的说明)
接下来，使用图3至图6对处理对象的半导体器件的一个例子进行说明。处理对象的半导体器件为层叠型的存储器。图4为在图3所示的空孔106中填充有电荷俘获膜等的状态的图。图5为将牺牲膜104除去的状态，并且是形成有空隙111的状态的图。图6为在空隙11中填充有金属膜112的图。
首先，使用图3，对在本技术中处理的衬底进行说明。图3中的(a)为在晶片100中形成的膜的侧剖面图，图3中的(b)为从上方观察而得到的图。需要说明的是，图3中的(b)的α-α’线处的侧剖面图相当于图3中的(a)。
在晶片100上，形成有公共源线路(CSL，Common Source Line)101。此外，在晶片100上，形成有绝缘膜102。在绝缘膜102上形成牺牲膜104。如图3所示，绝缘膜102与牺牲膜104交替层叠。具体而言，在绝缘膜102(1)上形成牺牲膜104(1)、绝缘膜102(2)、牺牲膜104(2)、…、绝缘膜102(8)、牺牲膜104(8)。在牺牲膜104(8)上，形成绝缘膜105。需要说明的是，这里，对将绝缘膜102、牺牲膜104形成8层的例子进行说明，但不限于此，也可以形成为更多层。
在由绝缘膜102、牺牲膜104构成的层叠膜及绝缘膜105中，形成有作为深槽的空孔106。空孔106构成为在底部使公共源线路101露出。如图3中的(b)记载的那样，空孔106在晶片100的面方向上设置多个。
接下来，使用图4，说明将空孔106填充后的状态。在空孔106内，从外周侧依次形成保护膜107、栅极间绝缘膜-电荷俘获膜-隧道绝缘膜的层叠膜108、沟道多晶硅膜109、填充绝缘膜110。各膜构成为筒状。
例如，保护膜107由SiO、金属氧化膜构成，栅极间绝缘膜-电荷俘获膜-隧道绝缘膜的层叠膜108由SiO-SiN-SiO膜构成。当除去改质牺牲膜104时，为了避免对层叠膜108造成损伤，在空孔106的内壁表面设置保护膜107从而进行保护。在空孔106中填充后，利用蚀刻处理将牺牲膜104除去。
图5为通过蚀刻处理而将牺牲膜114除去的状态的图。在形成牺牲膜114的位置处，形成有作为深槽的空隙111。空隙111与绝缘膜102交替配置。
图6为在空隙111中埋入有金属膜112的状态。金属膜112与绝缘膜102交替层叠。
(衬底处理工序)
使用图7、图8，对使用衬底处理装置200进行的衬底处理工序进行说明。图7为说明处理流程的图，图8为示出各流程与压力的关系的图。
通过进行本衬底处理工序，而在例如作为深槽的空孔106、空隙111中形成薄膜。需要说明的是，在以下说明中，构成衬底处理装置200的各部的动作由控制器280控制。
(衬底搬入·载置工序)
说明衬底搬入·载置工序。在图7中，将本工序的说明省略。在衬底处理装置200中，通过使衬底载置台212下降至晶片100的搬送位置(搬送Position)，从而使提升销207贯穿衬底载置台212的贯穿孔214。结果，提升销207处于从衬底载置台212表面仅突出规定高度的量的状态。接下来，打开阀262b，使搬送空间206与APC262c之间连通，将处理室205及搬送室206的气氛排气。
接下来，打开闸阀149，而将搬送空间206与真空搬送室(未图示)连通。另外，使用晶片移载机(未图示)，将晶片100从该移载室搬入搬送空间206，将晶片100移载至提升销207上。由此，晶片100以水平姿势支承于从衬底载置台212的表面突出的提升销207上。
在将晶片100搬入腔室202内后，使晶片移载机向腔室202之外退避，关闭闸阀149从而将腔室202内密闭。然后，通过使衬底载置台212上升，从而将晶片100载置于衬底载置面211上，通过进一步使衬底载置台212上升，从而使晶片100上升至前述处理空间205内的处理位置(衬底处理位置)。
此时，尽可能使分隔板208与衬底载置台的凸缘部212a接近，将处理空间205与搬送空间206隔离。然而，若凸缘部212a与分隔部208接触，则存在下述可能性：附着于它们上的附着物剥离、或任一者发生破坏等，从而产生颗粒。如本技术这样，在处理微细化图案的情况下，上述颗粒对衬底处理装置的性能产生不良影响。从而，成品率降低。因此，当使晶片100上升至处理位置时，以在凸缘212a与分隔板208之间设置空间221的方式进行控制。因此，处理空间205与搬送空间206连通。
当晶片100被搬入搬送空间206后，当上升至处理空间205内的处理位置后，打开阀261b，将处理空间205与APC261c之间连通。APC261c通过调节排气管261a的流导，从而将处理空间205维持为规定压力(例如10－5～10－1Pa的高真空)。
此外，APC262c调节排气管262a的流导，从而将搬送空间206维持为与处理空间205同程度的压力(例如10－5～10－1Pa的高真空)。
另外，当将晶片100载置于衬底载置台212之上时，向被埋入至衬底载置台212内部的加热器213供给电力，以晶片100的表面成为规定的温度的方式进行控制。晶片100的温度为例如室温以上且800℃以下，优选为室温以上且500℃以下。此时，基于由温度传感器检测到的温度信息，控制器280提取出控制值，通过温度控制部220来控制向加热器213的通电情况，由此调节加热器213的温度。
接下来，说明在深槽中形成薄膜的具体方法。这里，使用图7、图8，对形成由例如硅氧化膜构成的填充绝缘膜110的例子进行说明。图7表示晶片100的处理流程，图8为对处理流程的各工序、与处理空间205、搬送空间206中的压力的关系进行说明的说明图。
在使晶片100升温至衬底处理温度后，一边将晶片100保持在规定温度，一边伴随着加热处理而进行以下衬底处理。即，经由共用气体供给管242、簇射头230，而向配置于腔室202内的晶片100的表面(处理面)供给处理气体，处理晶片100。
以下，对作为第一处理气体使用DCS气体，作为第二处理气体使用氧(O2)气体，在深槽中形成硅氧化膜的例子进行说明。这里，进行交替供给处理，所述交替供给处理中，重复进行交替供给不同处理气体的工序。
(第一处理气体供给工序S202)
对第一处理气体供给工序S202进行说明。若加热晶片100从而得到所期望的温度，则打开阀243d，并且以DCS气体的流量成为规定流量的方式，调节质量流量控制器243c。需要说明的是，DCS气体的供给流量为例如100sccm以上且800sccm以下。此时，打开第三气体供给系统的阀245d，从第三气体供给管245a供给N2气体。也可以从第一非活性气体供给系统流过N2气体。
经由缓冲空间234而被供给至处理空间205的DCS气体通过热而分解为硅成分等，并被供给至晶片100上。所供给的硅成分与深槽的表面接触，从而在表面上形成作为“含第一元素的层”的含硅层。含硅层相当于形成的薄膜的前体。
与向处理空间205供给DCS气体并行地，从第四气体供给系统246向搬送空间206供给非活性气体。此时，以处理空间205与搬送空间206的压力差成为规定范围内的方式进行控制。具体而言，以使得处理空间205成为与搬送空间206大致相同压力、或略高的压力的方式，由搬送空间排气系统262和第四气体供给系统246进行控制。
这里，第一压力检测部261d检测处理空间205的压力，第二压力检测部262d检测搬送空间的压力，控制器280接收上述检测数据。控制器280控制质量流量控制器243c、质量流量控制器248c、APC261c、APC262c，并以使得处理空间205与搬送空间206的压力差成为规定范围内的方式进行控制。
在供给开始时，在将压力差维持在规定范围的状态下，慢慢地，以使得处理空间205、搬送空间206的压力缓缓变高的方式进行控制。
在供给开始时，也是通过将搬送空间206与处理空间205的压力差维持在规定范围内，从而使得在搬送空间206与处理空间205之间不产生显著的压力差。若产生显著的压力差，则存在下述可能性：搬送空间206内的气氛、在空间221滞留的气体的成分、附着的气体的成分等的颗粒扩散至处理空间205整个区域。尤其是，在搬送空间206的压力高的情况下，上述情况变得显著。上述颗粒附着于晶片100、附着于处理室壁，等等，从而存在成品率降低的可能性。因此，在供给开始时，以搬送空间206的压力与处理空间205的压力差在规定范围内的方式进行应对来抑制扩散。
此外，通过缓缓提高处理空间205、搬送空间206的压力，从而更确实地使得不会产生显著的压力差。
在处理中，通过使处理空间205与搬送空间206压力相同、或者使搬送空间206的压力比处理空间205高，由此，抑制DCS气体从处理空间205侵入搬送空间206。需要说明的是，在图8中，分别将处理空间205与搬送空间206的压力设为P1、并设为相同压力。压力P1设定在分解后的含有第一气体的气体不发生再结合的程度的压力。
此时，以使得处理空间205、搬送空间206各自的压力成为在例如50～300Pa之中的规定值的方式进行控制。
通过采用如上所述的压力值，硅成分的平均自由行程变长，结果，硅成分能够到达深槽的底部。所谓平均自由行程长，换言之，是指分解后的DCS气体的撞击概率减少。即，分解后的DCS气体再结合的概率低。因而，能够使硅成分以分解后的状态到达深槽的底部，结果，能够在深槽的底部形成前体。
经过规定时间后，关闭阀243d，从而停止DCS气体的供给。优选的是，在关闭阀243d前，控制质量流量控制器243c、质量流量控制器248c、APC261c、APC262c，从而以与供给开始时同样地，以搬送空间206与处理空间205的压力差维持在规定范围内的方式进行控制。此外，优选的是，使处理空间205、搬送空间206的压力缓缓变动。
例如，在将压力差维持在规定范围内的状态下，缓缓地减少第一处理气体的供给量，与此并行地，缓缓地减少从第四气体供给系统248供给的非活性气体的供给量。
通过将压力差维持在规定范围，从而使得不产生显著的压力差。此外，通过缓缓地减少处理空间205、搬送空间206的压力，从而更确实地不产生显著的压力差。
当攻击第一处理气体时，在从第一非活性气体供给管246a供给N2的情况下，考虑上述N2气体的供给量，从而调节向处理室的供给量、处理空间205的压力。
(第一吹扫工序S204)
对第一吹扫工序S204进行说明。打开阀254d，从第三气体供给管245a供给N2气体，进行簇射头230及处理空间205的吹扫。与此并行地，打开阀248d，从第四气体供给管248a供给N2气体，以使得处理空间205与搬送空间206的压力差成为规定范围内的方式进行控制。例如，以使得处理空间205与搬送空间206为相同压力、或使得与处理空间205相比，搬送空间206处于较高压力的方式进行控制。
这里，与第一处理气体供给工序S202同样地，基于由第一压力检测部261d、第二压力检测部262d检测到的检测数据，控制器280控制质量流量控制器245c、质量流量控制器248c、APC261c、APC262c，以使得处理空间205与搬送空间206的压力差处于规定范围内。例如，以使得处理空间205与搬送空间206为相同压力、或使得与处理空间205相比，搬送空间206处于较高压力的方式进行控制。
在供给开始时，在将压力差维持在规定范围的状态下，慢慢地，以使得处理空间205、搬送空间206的压力缓缓变高的方式进行控制。
通过将压力差维持在规定范围，从而使得不产生显著的压力差。此外，通过缓缓地增高处理空间205、搬送空间206的压力，从而更确实地使得不产生显著的压力差。
通过使处理空间205与搬送空间206为相同压力、或者使搬送空间206的压力较高，从而使得处理空间205中的残余气体不进入搬送空间206。通过使得处理空间205中的残余气体不进入搬送空间206，从而避免发生由残余气体在搬送空间206中产生颗粒。
此时，进行控制以使得处理空间205、搬送空间206的压力成为例如50～300Pa之中的比P1高的压力即P2。由此，非活性气体的流速升高，因此，能够提高气体的置换效率。即，能够将在第一处理气体供给工序S202中供给的第一处理气体提前进行吹扫。需要说明的是，在图8中，将处理空间205与搬送空间206的压力设为相同压力。
经过规定时间后，关闭阀245d，停止N2气体的供给。优选的是，在关闭阀245d之前，控制质量流量控制器245c、质量流量控制器248c、APC261c、APC262c，以使得搬送空间206与处理空间205的压力差维持在规定范围内的方式进行控制。此外，优选的是，使处理空间205、搬送空间206的压力缓缓地变动。
例如，在将压力差维持在规定范围内的状态下，缓缓地使来自第三气体供给系统245的非活性气体供给量减少，与此并行地，缓缓地减少从第四气体供给系统248供给的非活性气体的供给量。
通过将压力差维持在规定范围，从而使得不产生显著的压力差。此外，通过缓缓地增高处理空间205、搬送空间206的压力，从而更确实地使得不产生显著的压力差。
(第二处理气体供给工序S206)
对第二处理气体供给工序S206进行说明。在第一吹扫工序S204之后，打开阀244d，经由簇射头230开始向处理空间205内供给氧气体。
此时，以氧气体的流量成为规定流量的方式，调节质量流量控制器244c。需要说明的是，氧气体的供给流量为例如100sccm以上且6000sccm以下。需要说明的是，也可以与氧气体一起从第二非活性气体供给系统流入N2气体作为载气。另外，在本工序中，打开第三气体供给系统的阀245d，从第三气体供给管245a供给N2气体。
氧气体通过远程等离子体单元244e而形成等离子体状态。等离子体状态的氧气体经由簇射头230而被供给至晶片100上。通过氧气体将已在深槽中形成的含硅层改质，由此，形成由包含硅元素及氧元素的层构成的薄膜。
经过规定时间后，关闭阀244d，停止氧气体的供给。
在第二处理气体供给工序S206中，也与上述S202同样地，打开阀261b，以处理空间205的压力成为规定压力的方式通过APC261c进行控制。本工序中的压力设为比第一处理气体供给工序S202高的压力。理由后述。
另外，与向处理空间205供给氧气体并行地，从第四气体供给系统246向搬送空间206供给非活性气体。此时，以使得处理空间205与搬送空间206的压力差成为规定范围内的方式进行控制。具体而言，以使得处理空间205与搬送空间206大致成为相同压力、或使得搬送空间206成为略高的压力的方式，通过搬送空间排气系统262和第四气体供给系统246进行控制。
这里，与第一处理气体供给工序S202同样地，基于第一压力检测部261d、第二压力检测部262d检测到的检测数据，控制器280控制质量流量控制器244c、质量流量控制器248c、APC261c、APC262c，与第一处理气体供给工序S202同样地，以使得处理空间205与搬送空间206的压力差处于规定范围内的方式进行控制。
在供给开始时，在将搬送空间206与处理空间205的压力差维持在规定范围的状态下，慢慢地，以使得处理空间205、搬送空间206的压力缓缓变高的方式进行控制。
通过将压力差维持在规定范围内，从而使得不产生显著的压力差。此外，通过缓缓地提高处理空间205、搬送空间206的压力，从而更确实地使得不产生显著的压力差。
通过使处理空间205和搬送空间206成为相同压力、或提高搬送空间206的压力，从而抑制氧气体从处理空间205侵入搬送空间206。需要说明的是，在图8中，将处理空间205和搬送空间206的压力设为比第一处理气体供给工序S202高的P3，并设为相同压力。
此时，以使得处理空间205、搬送空间206的压力成为例如100～1400Pa之中的规定值的方式进行控制。这是氧成分能够移动至深槽的底部的压力，结果能够将深槽的底部处的前体改质。因而，在深槽的底部，也能够形成薄膜。需要说明的是，当第二元素气体为等离子体状态的情况下，设为等离子体不发生失活的程度的压力。
经过规定时间后，关闭阀244d，停止氧气体的供给。优选的是，在关闭阀244d前，控制质量流量控制器244c、质量流量控制器248c、APC261c、APC262c，以使得搬送空间206与处理空间205的压力差维持在规定范围内的方式进行控制。此外，优选的是，使处理空间205、搬送空间206的压力缓缓地变动。
例如，在将压力差维持在规定范围内的状态下，缓缓地减少第二处理气体的供给量，与此并行地，缓缓地减少从第四气体供给系统248供给的非活性气体的供给量。
通过将压力差维持在规定范围内，从而使得不产生显著的压力差。此外，通过缓缓地减少处理空间205、搬送空间206的压力，从而更确实地使得不产生显著的压力差。
当供给第二处理气体时，在从第二非活性气体供给管247a供给N2气体的情况下，考虑上述N2气体的供给量，调节向处理室的供给量、处理空间205的压力。
(第二吹扫工序S208)
对第二吹扫工序S208进行说明。与第一吹扫工序S204同样地，从第三气体供给管245a供给N2气体，进行簇射头230及处理空间205的吹扫。与此并行地，从第四气体供给管248a供给N2气体，以使得处理空间205与搬送空间206的压力差成为规定范围内的方式进行控制。例如，以使得处理空间205与搬送空间206成为相同压力、或者使得搬送空间206比处理空间205略高的压力的方式进行控制。
在供给开始时，在将压力差维持在规定范围的状态下，慢慢地，以使得处理空间205、搬送空间206的压力缓缓地变高的方式进行控制。
此时，将处理空间205、搬送空间206的压力设为比吹扫工序S204高的压力。例如，以成为20～300Pa之中的规定值的方式进行控制。通过采用如上所述的压力值，由此非活性气体的流速上升，因此，能够提高气体的置换效率。即，能够将在第二处理气体供给工序S206中供给的第二处理气体提前吹扫。需要说明的是，在图8中，将处理空间205和搬送空间206的压力分别设为P3，设为相同压力。
经过规定时间后，关闭阀245d，停止N2气体的供给。优选的是，在关闭阀245d前，控制质量流量控制器245c、质量流量控制器248c、APC261c、APC262c，以使得搬送空间206与处理空间205的压力差维持在规定范围内的方式进行控制。此外，优选的是，使处理空间205、搬送空间206的压力缓缓地变动。
例如，在将压力差维持在规定范围内的状态下，缓缓地减少从第三气体供给系统245的非活性气体供给量，与此并行地，缓缓地减少从第四气体供给系统248供给的非活性气体的供给量。
(判定S210)
对判定S210进行说明。控制器280对是否实施了将上述1次循环实施了规定次数(n次循环)进行判定。
当没有实施规定次数时(在S210中为“否”的情况下)，对第一处理气体供给工序S202、吹扫工序S204、第二处理气体供给工序S206、吹扫工序S208的循环进行重复。当实施了规定次数时(在S210中为“是”的情况)，结束图7所示的处理。
(衬底搬出工序)
在衬底搬出工序中，使衬底载置台212下降，将晶片100支承于从衬底载置台212的表面突出的提升销207上。由此，晶片100从处理位置达到搬送位置。然后，打开闸阀149，使用机械臂(arm)(未图示)将晶片100搬出腔室202之外。
利用以上说明的技术，即便相对于纵横比高的深槽，也能够在深槽的底部形成薄膜。
需要说明的是，在上述实施方式中，针对使用含硅气体作为第一处理气体、使用氧气体作为第二处理气体，在深槽中形成硅氧化膜的情况进行了说明，但不限于此。作为第一处理气体，只要具有易于分解的性质即可，例如也可以是HCD(Si2Cl6)、TDMAS(SiH(N(CH3)2)3)。另外，作为第二处理气体，不限于O2气体，也可以是臭氧、HO等。另外，第二元素不限于氧，也可以是氮。尤其是在臭氧的情况下，由于其单独具有高能量，因此，也可以不形成等离子体状态。因此，当采用等离子体失活这样的程度的高压时，也可使用臭氧。
另外，作为非活性气体，以N2气体为例进行了说明，但只要是不与处理气体反应的气体即可，不限于此。例如，可以使用氦(He)气体、氖(Ne)气体、氩(Ar)气体等稀有气体。

Claims (5)

1.半导体器件的制造方法，其具有：
经由衬底搬入搬出口将具有深槽的衬底搬入搬送空间的工序；
将所述衬底移动至处理空间的工序；
第一处理气体供给工序，其中，
在所述处理空间与所述搬送空间连通、在所述处理空间内存在所述衬底的状态下，
向所述处理空间供给第一处理气体并形成第一压力，从而在所述深槽中形成前体，并且，
向所述搬送空间供给非活性气体，使所述搬送空间的压力与所述处理空间的压力为相同压力、或者使所述搬送空间的压力比所述处理空间的压力高；和
第二处理气体供给工序，其中，
在所述第一处理气体供给工序之后，
在所述处理空间与所述搬送空间连通、在所述处理空间内存在所述衬底的状态下，
向所述处理空间供给第二处理气体并形成比第一压力高的第二压力，从而将在所述深槽中形成的所述前体改质并形成薄膜，并且，
向所述搬送空间供给非活性气体，使所述搬送空间的压力与所述处理空间的压力为相同压力、或者使所述搬送空间的压力比所述处理空间的压力高。
2.根据权利要求1所述的半导体器件的制造方法，其中，所述第一压力为所述第一处理气体不发生再结合的压力。
3.根据权利要求1所述的半导体器件的制造方法，其中，所述第一处理气体具有容易分解的性质。
4.衬底处理装置，其具有：
搬送室，其与衬底搬入搬出口邻接，且具有搬送衬底的搬送空间；
处理室，其位于所述搬送室的上方，且具有处理衬底的处理空间；
衬底支承部，其对在所述处理空间中进行处理的具有深槽的衬底进行支承；
处理气体供给部，其向所述处理空间供给处理气体；
非活性气体供给部，其向所述搬送空间供给非活性气体；
控制部，其执行下述步骤：
在所述处理空间与所述搬送空间连通、在所述处理空间内存在所述衬底的状态下，向所述处理空间供给第一处理气体并形成第一压力，从而在所述深槽中形成前体，并且，向所述搬送空间供给非活性气体，使所述搬送空间的压力与所述处理空间的压力为相同压力、或者使所述搬送空间的压力比所述处理空间的压力高；
之后，
在所述处理空间与所述搬送空间连通、在所述处理空间内存在所述衬底的状态下，向所述处理空间供给第二处理气体并形成比第一压力高的第二压力，从而将在所述深槽中形成的所述前体改质并形成薄膜，并且，向所述搬送空间供给非活性气体，使所述搬送空间的压力与所述处理空间的压力为相同压力、或者使所述搬送空间的压力比所述处理空间的压力高。
5.记录介质，其记录有通过计算机使衬底处理装置执行下述步骤的程序：
经由衬底搬入搬出口将具有深槽的衬底搬入搬送空间的步骤；
将所述衬底移动至处理空间的步骤；
在所述处理空间与所述搬送空间连通、在所述处理空间内存在所述衬底的状态下，向所述处理空间供给第一处理气体并形成第一压力，从而在所述深槽中形成前体，并且，向所述搬送空间供给非活性气体，使所述搬送空间的压力与所述处理空间的压力为相同压力、或者使所述搬送空间的压力比所述处理空间的压力高；
之后，
在所述处理空间与所述搬送空间连通、在所述处理空间内存在所述衬底的状态下，向所述处理空间供给第二处理气体并形成比第一压力高的第二压力，从而将在所述深槽中形成的所述前体改质并形成薄膜，并且，向所述搬送空间供给非活性气体，使所述搬送空间的压力与所述处理空间的压力为相同压力、或者使所述搬送空间的压力比所述处理空间的压力高。
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