TWI682460B - 半導體裝置的製造方法、基板處理裝置及程式 - Google Patents

半導體裝置的製造方法、基板處理裝置及程式 Download PDF

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TWI682460B
TWI682460B TW107106494A TW107106494A TWI682460B TW I682460 B TWI682460 B TW I682460B TW 107106494 A TW107106494 A TW 107106494A TW 107106494 A TW107106494 A TW 107106494A TW I682460 B TWI682460 B TW I682460B
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space
pressure
processing
gas
substrate
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TW107106494A
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TW201935561A (zh
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鎌倉司
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日商國際電氣股份有限公司
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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Abstract

本發明的課題是在於提供對於深寬比高的深溝，也可在底部形成薄膜的技術。  　　其解決手段為：  　　將具有深溝的基板經由基板搬出入口來搬入至搬送空間，將前述基板移動至處理空間，前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第一處理氣體供給至前述處理空間而設為第一壓力，在前述深溝形成先驅物，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第一壓力的壓力差形成於預定的範圍，然後，前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第二處理氣體供給至前述處理空間而設為比第一壓力更高的第二壓力，將被形成於前述深溝的前述先驅物改質而形成薄膜，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第二壓力的壓力差維持於前述預定的範圍。

Description

半導體裝置的製造方法、基板處理裝置及程式
[0001] 本發明是有關半導體裝置的製造方法，基板處理裝置及程式。
[0002] 近年來，被形成於半導體裝置的圖案是有微細化的傾向。例如專利文獻1是在被形成於基板的深溝的表面形成薄膜。
(發明所欲解決的課題)  　　[0003] 隨著半導體裝置的微細化，有深溝的深寬比(Aspect Ratio)變高的傾向。為此，難以在深溝的底部形成薄膜。  　　[0004] 以提供一種即使對於深寬比高的深溝，也可在底部形成薄膜的技術為目的。  　　[0005]   　　[專利文獻1] 日本特開2017-69407   (用以解決課題的手段)  　　[0006] 若根據一態樣，則將具有深溝的基板經由基板搬出入口來搬入至搬送空間，將前述基板移動至處理空間，前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第一處理氣體供給至前述處理空間而設為第一壓力，在前述深溝形成先驅物，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第一壓力的壓力差形成於預定的範圍，然後，前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第二處理氣體供給至前述處理空間而設為比第一壓力更高的第二壓力，將被形成於前述深溝的前述先驅物改質而形成薄膜，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第二壓力的壓力差維持於前述預定的範圍。   [發明的效果]   　　[0007] 可提供一種即使對於深寬比高的深溝，也可在底部形成薄膜的技術。
[0009] 利用圖1來說明有關在深溝形成薄膜的基板處理裝置200之一例。  　　[0010]   (腔室)  　　首先，說明腔室。  　　基板處理裝置200是具有腔室202。腔室202是例如横剖面為圓形，構成為扁平的密閉容器。並且，腔室202是藉由例如鋁(Al)或不鏽鋼(SUS)等的金屬材料所構成。在腔室202內是形成有處理作為基板的矽晶圓等的晶圓100之處理空間205，及將晶圓100搬送至處理空間205時晶圓100所通過的搬送空間206。腔室202是以上部容器202a及下部容器202b所構成。在上部容器202a與下部容器202b之間是設有隔板208。  　　[0011] 在下部容器202b的側面是設有與閘閥149鄰接的基板搬出入口148，晶圓100是經由基板搬出入口148來移動於與未圖示的真空搬送室之間。在下部容器202b的底部是設有複數個昇降銷207。而且，下部容器202b是被接地。  　　[0012] 構成處理空間205的處理室是例如以後述的基板載置台212及淋浴頭230所構成。在處理空間205內是設有支撐晶圓100的基板支撐部210。基板支撐部210是主要具有：載置晶圓100的基板載置面211，在表面持有基板載置面211的基板載置台212、及被包在基板載置台212內之作為加熱源的加熱器213。在基板載置台212中，昇降銷207所貫通的貫通孔214會分別設在與昇降銷207對應的位置。加熱器213是連接控制加熱器213的溫度之溫度控制部220。  　　[0013] 基板載置台212是藉由軸217所支撐。軸217的支撐部是貫通被設在腔室202的底壁的孔215，更經由支撐板216在腔室202的外部連接至昇降機構218。使昇降機構218作動而使軸217及基板載置台212昇降，藉此可使被載置於基板載置面211上的晶圓100昇降。另外，軸217下端部的周圍是藉由波紋管219所覆蓋。腔室202內是被保持於氣密。  　　[0014] 基板載置台212是在晶圓100的搬送時，基板載置面211會下降至與基板搬出入口148對向的位置，在晶圓100的處理時，如在圖1所示般，晶圓100會上昇至成為處理空間205內的處理位置。  　　[0015] 具體而言，在使基板載置台212下降至晶圓搬送位置時，昇降銷207的上端部會從基板載置面211的上面突出，昇降銷207會從下方支撐晶圓100。並且，在使基板載置台212上昇至晶圓處理位置時，昇降銷207是從基板載置面211的上面埋没，基板載置面211會從下方支撐晶圓100。  　　[0016] 在處理空間205的上部(上游側)是設有淋浴頭230。  　　淋浴頭230是具有蓋231。蓋231是具有凸緣232，凸緣232是在上部容器202a上被支撐。而且，蓋231是具有定位部233。藉由定位部233嵌合於上部容器202a，蓋231會被固定。  　　[0017] 淋浴頭230是具有緩衝空間234。緩衝空間234是意指以蓋231及定位部232所構成的空間。緩衝空間234與處理空間205是連通。被供給至緩衝空間234的氣體是在緩衝空間內232擴散，被均一地供給至處理空間205。在此是將緩衝空間234與處理空間205設為別的構成進行說明，但並非限於此，亦可將緩衝空間234含在處理空間205。  　　[0018] 處理空間205是主要以上部容器202a、基板處理位置的基板載置台212的上部構造所構成。將構成處理空間205的構造稱為處理室。另外，處理室是只要為構成處理空間205的構造即可，當然不拘於上述構造。  　　[0019] 搬送空間206是主要以下部容器202b、基板處理位置的基板載置台212的下部構造所構成。將構成搬送空間206的構造稱為搬送室。搬送室是被配置於處理室的下方。另外，搬送室是只要為構成搬送空間205的構造即可，當然不拘於上述構造。  　　[0020]   (氣體供給部)  　　接著說明氣體供給部。共通氣體供給管242是連接第一氣體供給管243a、第二氣體供給管244a、第三氣體供給管245a。並且，下部容器202b是連接第四氣體供給管248a。  　　[0021] 從包含第一氣體供給管243a的第一氣體供給系243是主要供給第一處理氣體，從包含第二氣體供給管244a的第二氣體供給系244是主要供給第二處理氣體。從包含第三氣體供給管245a的第三氣體供給系245是供給惰性氣體。從包含第四氣體供給管248a的第四氣體供給系248是供給惰性氣體。  　　[0022]   (第一氣體供給系)  　　在第一氣體供給管243a是從上游方向依序設有第一氣體供給源243b、流量控制器(流量控制部)的質量流控制器(MFC)243c及開閉閥的閥243d。  　　[0023] 含有第一元素的氣體(以下稱為「第一處理氣體」)會從第一氣體供給管243a經由質量流控制器243c、閥243d、共通氣體供給管242來供給至淋浴頭230。  　　[0024] 第一處理氣體是原料氣體，亦即處理氣體之一。在此，第一元素是例如矽(Si)。亦即，第一處理氣體是例如含矽氣體。具體而言，可使用二氯矽烷(SiH 2Cl 2，亦稱為DCS)氣體，作為含矽氣體。  　　[0025] 在第一氣體供給管243a之比閥243d更下游側是連接第一惰性氣體供給管246a的下游端。在第一惰性氣體供給管246a是從上游方向依序設有惰性氣體供給源246b、流量控制器(流量控制部)的質量流控制器(MFC)246c及開閉閥的閥246d。  　　[0026] 在此，惰性氣體是例如氮(N 2)氣體。作為原料氣體的載體氣體或稀釋氣體作用。  　　[0027] 主要藉由第一氣體供給管243a、質量流控制器243c、閥243d來構成第一處理氣體供給系243(亦稱為含矽氣體供給系)。  　　[0028] 並且，主要藉由第一惰性氣體供給管246a、質量流控制器246c及閥246d來構成第一惰性氣體供給系。另外，亦可思考將惰性氣體供給源246b、第一氣體供給管243a含在第一惰性氣體供給系中。  　　[0029] 而且，亦可思考將第一氣體供給源243b、第一惰性氣體供給系含在第一處理氣體供給系243中。  　　[0030]   (第二氣體供給系)  　　在第二氣體供給管244a的上游是從上游方向依序設有反應氣體供給源244b、流量控制器(流量控制部)的質量流控制器(MFC)244c及開閉閥的閥244d。在將反應氣體設為電漿狀態時，是在閥244d的下游設置遠程電漿單元(RPU)244e。  　　[0031] 然後，從第二氣體供給管244a是反應氣體會經由MFC244c、閥244d、共通氣體供給管242來供給至淋浴頭230內。將反應氣體設為電漿狀態時，是藉由RPU244e來成為電漿狀態，照射至晶圓100上。  　　[0032] 反應氣體是處理氣體之一，例如氧氣體。可例如使用氧(O 2)氣體作為氧氣體。  　　[0033] 主要藉由第二氣體供給管244a、MFC244c、閥244d來構成反應氣體供給系244。另外，反應氣體供給系244是亦可思考包含反應氣體供給源244b、RPU244e、後述的第二惰性氣體供給系。  　　[0034] 在第二氣體供給管244a之比閥244d更下游側是連接第二惰性氣體供給管247a的下游端。在第二惰性氣體供給管247a是從上游方向依序設有惰性氣體供給源247b、流量控制器(流量控制部)的質量流控制器(MFC)247c及開閉閥的閥247d。然後，從第二惰性氣體供給管247a是惰性氣體會經由MFC247c、閥247d、第二氣體供給管244a、RPU244e來供給至淋浴頭230內。  　　[0035] 惰性氣體是作為反應氣體的載體氣體或稀釋氣體作用。具體而言，例如，可使用氮(N 2)氣體。  　　[0036] 主要藉由第二惰性氣體供給管247a、MFC247c及閥247d來構成二惰性氣體供給系。另外，第二惰性氣體供給系是亦可思考包含惰性氣體供給源247b、第二氣體供給管243a、RPU244e。又，第二惰性氣體供給系是亦可思考含在第二氣體供給系244中。  　　[0037]   (第三氣體供給系)  　　在第三氣體供給管245a是從上游方向依序設有第三氣體供給源245b、流量控制器(流量控制部)的質量流控制器(MFC)245c及開閉閥的閥245d。  　　[0038] 作為淨化氣體的惰性氣體會從第三氣體供給管245a經由質量流控制器245c、閥245d、共通氣體供給管242來供給至淋浴頭230。惰性氣體是例如為氮(N 2)氣體。  　　[0039] 主要藉由第三氣體供給管245a、質量流控制器245c、閥245d來構成第三氣體供給系245。  　　[0040] 從惰性氣體供給源245b供給的惰性氣體是在基板處理工程中，作為淨化停留在腔室202或淋浴頭230內的氣體之淨化氣體作用。  　　[0041] 主要將第一氣體供給系243、第二氣體供給系244、第三氣體供給系245總稱為處理氣體供給部。另外，所謂處理氣體供給部是只要為將處理氣體供給至處理空間的構成即可，按照製程，表示第一氣體供給系243、第二氣體供給系244、第三氣體供給系245的任一或該等一部分的組合者。  　　[0042]   (第四氣體供給系)  　　在第四氣體供給管248a從上游方向依序設有第四氣體供給源248b、流量控制器(流量控制部)的質量流控制器(MFC)248c及開閉閥的閥248d。  　　[0043] 作為淨化氣體的惰性氣體會從第四氣體供給管248a經由質量流控制器248c、閥248d供給至搬送空間206。惰性氣體是例如氮(N 2)氣體。  　　[0044] 主要藉由第四氣體供給管248a、質量流控制器248c、閥248d來構成第四氣體供給系248。第四氣體供給系248是亦稱為供給惰性氣體至搬送室206的惰性氣體供給部。  　　[0045] 可是，近年來隨著裝置特性改善或新穎膜種的採用，被要求在低溫下使氣體反應而成膜。因為若在高溫下處理，則會有對已被形成的膜造成不良影響的情況。  　　[0046] 作為形成品質高的膜的方法，雖有使用具有安定的元素的氣體之方法，但大部分在反應所必要的溫度高，因此有不按照低溫要求的問題。  　　[0047] 另一方面，作為在低溫下形成品質高的膜之方法，有使用電漿的方法。若對照於本實施形態，則設置供給電力至處理空間205內的構造，藉由該電力來將被供給至處理空間205的氣體設為電漿狀態。此方法也可實現低溫，但成為高的能量，在深溝上CVD反應會被促進。因此，在氣體侵入至深溝的深部之前，膜會被形成於表面，結果有無法在深部形成膜的問題。  　　[0048] 於是，作為第一處理氣體，是使用容易在低溫分解的氣體。又，作為第二處理氣體，是可在低溫分解的氣體，或利用遠程電漿單元244e來產生低能量的電漿狀態的氣體。而且，如後述般，供給第二處理氣體時，將處理空間205設為高壓。藉由如此，使第一處理氣體、第二處理氣體到達至深溝的底部。  　　[0049]   (排氣部)  　　將腔室202的氣氛排氣的排氣系是主要以將處理空間205的氣氛排氣之處理空間排氣系261、將搬送空間206的氣氛排氣之搬送空間排氣系262所構成。  　　[0050] 處理空間排氣系261是具有被連接至處理空間205的排氣管(第1排氣管)261a。排氣管261是被設成為連通至處理空間205。在排氣管261是設有將處理空間205內控制成預定的壓力之壓力控制器的APC(AutoPressure Controller)261c、計測處理空間205的壓力之第一壓力檢測部261d。APC261c是具有可調整開度的閥體(未圖示)，按照來自後述的控制器280的指示來調整排氣管261的傳導。並且，在排氣管262中在APC261c的上游側是設有閥261b。將排氣管262及閥261b、APC261c、第一壓力檢測部261d總稱為處理室排氣系261。  　　[0051] 搬送空間排氣系262是具有被連接至搬送空間206的排氣管(第2排氣管)262a。  　　排氣管262a是被設在構成搬送空間206的下部容器202b的側面或底面。在排氣管262是設有將搬送空間206內控制成預定的壓力之壓力控制器的APC262c。另外，亦可在排氣管262設置泵262e(TMP。Turbo Morecular Pump)。在排氣管262a中在泵262e的上游側是設有作為搬送空間用排氣閥的閥262b。而且，在排氣管262a是設有檢測出搬送空間206的壓力之第二壓力檢測部262d。將排氣管261及APC262c、閥262b、第二壓力檢測部262d總稱為搬送室排氣系262。亦可在搬送室排氣系262中含泵262e。  　　[0052] 在排氣管261，排氣管262的下游側是連接排氣管(第3排氣管)264。在排氣管264是設有DP(Dry Pump，乾式泵)278。如圖示般，在排氣管264是從其上游側連接排氣管262、排氣管261，更在該等的下游設有DP278。DP278是經由排氣管262、排氣管261的各者來將處理空間205及搬送空間206的各者的氣氛排氣。並且，DP278是在TMP265動作時，亦作為其輔助泵的機能。亦即，因為高真空(或超高真空)泵的TMP262e是難以單獨進行至大氣壓水準的排氣，所以使用DP278作為輔助泵。上述的排氣系的各閥是例如可使用空氣閥。  　　[0053]   (控制器)  　　基板處理裝置200是具有控制基板處理裝置200的各部的動作之控制器280。控制器280是如圖2記載般，至少具有運算部(CPU)280a、暫時記憶部280b、記憶部280c、收發訊號部280d。控制器280是經由收發訊號部280d來連接至基板處理裝置200的各構成，按照上位控制器或使用者的指示來從記憶部280c叫出程式或處方，按照其內容來控制各構成的動作。另外，控制器280是亦可設為專用的電腦來構成，或亦可設為泛用的電腦來構成。例如，準備儲存上述的程式之外部記憶裝置(例如，磁帶、軟碟或硬碟等的磁碟、CD或DVD等的光碟、MO等的光磁碟、USB記憶體(USB Flash Drive)或記憶卡等的半導體記憶體)282，利用外部記憶裝置282來將程式安裝於泛用的電腦，藉此可構成本實施形態的控制器280。並且，用以供給程式至電腦的手段是不限於經由外部記憶裝置282來供給的情況。例如，亦可使用網際網路或專線等的通訊手段，或亦可從上位裝置270經由收發訊號部283來接受資訊，不經由外部記憶裝置282來供給程式。又。亦可利用鍵盤或觸控面板等的輸出入裝置281來指示控制器280。  　　[0054] 另外，記憶部280c或外部記憶裝置282是作為電腦可讀取的記錄媒體來構成。以下，亦可將該等總稱，簡稱為記錄媒體。另外，在本說明書中使用記錄媒體的言辭時，有只包含記憶部280c單體的情況，只包含外部記憶裝置282單體的情況，或包含其雙方的情況。  　　[0055]   (半導體裝置的說明)  　　接著，利用圖3~圖6來說明處理對象的半導體裝置之一例。處理對象的半導體裝置是層疊型的記憶體。圖4是使電荷捕捉膜等充填於圖3記載的孔106的狀態的圖。圖5是除去犧牲膜104的狀態，形成有空隙111的狀態的圖。圖6是使金屬膜112充填於空隙11的圖。  　　[0056] 最初利用圖3來說明有關以本技術來處理的基板。圖3(a)是被形成於晶圓100的膜的側剖面圖，圖3(b)是從上方看的圖。另外，圖3(b)的α―α’線的側剖面圖相當於圖3(a)。  　　[0057] 在晶圓100是形成有共通來源線(CSL、Common Source Line)101。而且，在晶圓100上是形成有絕緣膜102。在絕緣膜102上是形成有犧牲膜104。如圖3記載般，絕緣膜102與犧牲膜104是交替層疊。具體而言，在絕緣膜102(1)上是形成有犧牲膜104(1)、絕緣膜102(2)、犧牲膜104(2)、…、絕緣膜102(8)、犧牲膜104(8)。在犧牲膜104(8)上是形成有絕緣膜105。另外，在此是說明將絕緣膜102、犧牲膜104形成8層的例子，但並非限於此，亦可形成更多層。  　　[0058] 在以絕緣膜102、犧牲膜104所構成的層疊膜及絕緣膜105是形成有作為深溝的孔106。孔106是被構成為在底部露出共通來源線101。孔106是如圖3(b)記載般，在晶圓100的面方向設置多數。  　　[0059] 接著利用圖4來說明充填孔106的狀態。  　　在孔106內是從外周側依序形成有保護膜107、閘極電極間絕緣膜-電荷捕捉膜-通道絕緣膜的層疊膜108、通道多晶矽膜109、充填絕緣膜110。各膜是被構成筒狀。  　　[0060] 例如，保護膜107是以SiO或金屬氧化膜所構成，閘極電極間絕緣膜-電荷捕捉膜-通道絕緣膜的層疊膜108是以SiO-SiN-SiO膜所構成。在除去改質犧牲膜104時，為了迴避損傷進入層疊膜108，而在孔106的內壁表面設置保護膜107加以保護。在孔106充填後，藉由蝕刻處理來除去犧牲膜104。  　　[0061] 圖5是藉由蝕刻處理來除去犧牲膜114的狀態的圖。在形成有犧牲膜114的場所是形成有作為深溝的空隙111。空隙111是與絕緣膜102交替配置。  　　[0062] 圖6是金屬膜112被埋入至空隙111的狀態。金屬膜112是與絕緣膜102交替層疊。  　　[0063]   (基板處理工程)  　　利用圖7、圖8來說明有關利用基板處理裝置200的基板處理工程。圖7是說明處理流程的圖，圖8是表示各流程與壓力的關係的圖。  　　[0064] 藉由進行本基板處理工程，例如在作為深溝的孔106或空隙111形成薄膜。另外，在以下的說明中，構成基板處理裝置200的各部的動作是藉由控制器280來控制。  　　[0065]   (基板搬入・載置工程)  　　說明基板搬入・載置工程。在圖7中是省略本工程的說明。  　　基板處理裝置200是藉由使基板載置台212下降至晶圓100的搬送位置(搬送位置)，使昇降銷207貫通於基板載置台212的貫通孔214。其結果，昇降銷207會成為比基板載置台212表面只更突出預定的高度部分的狀態。其次，開啟閥262b，使搬送空間206與APC262c之間連通，將處理室205及搬送室206的氣氛排氣。  　　[0066] 接著，開啟閘閥149來使搬送空間206與真空搬送室(未圖示)連通。然後，由此移載室利用晶圓移載機(未圖示)來將晶圓100搬入至搬送空間206，將晶圓100移載至昇降銷207上。藉此，晶圓100是在從基板載置台212的表面突出的昇降銷207上以水平姿勢支撐。  　　[0067] 一旦將晶圓100搬入至腔室202內，則使晶圓移載機退避至腔室202之外，關閉閘閥149來將腔室202內密閉。然後，藉由使基板載置台212上昇，使晶圓100載置於基板載置面211上，更藉由使基板載置台212上昇，使晶圓100上昇至前述的處理空間205內的處理位置(基板處理位置)。  　　[0068] 此時，使隔板208與基板載置台的凸緣部212a儘可能接近，隔離處理空間205與搬送空間206。可是，一旦使凸緣部212a與間隔部208接觸，則附著於該等的附著物會剝落或哪個損壞等，恐有產生微粒之虞。如本技術般處理微細化圖案時，該微粒對基板處理裝置的性能造成不良影響。因此，良品率會降低。於是，在使晶圓100上昇至處理位置為止時，控制成為在凸緣212a與隔板208之間設有空間221。因此，處理空間205與搬送空間206是連通。  　　[0069] 晶圓100被搬入至搬送空間206之後，一旦使上昇至處理空間205內的處理位置，則開啟閥261b，使處理空間205與APC261c之間連通。APC261c是藉由調整排氣管261a的傳導，將處理空間205維持於預定的壓力(例如10 -5~10 -1Pa的高真空)。  　　[0070] 而且，APC262c會調整排氣管262a的傳導，將搬送空間206維持於與處理空間205同程度的壓力(例如10 -5~10 -1Pa的高真空)。  　　[0071] 並且，將晶圓100載置於基板載置台212上時，將電力供給至被埋入於基板載置台212的內部的加熱器213，控制成為晶圓100的表面會成為預定的溫度。晶圓100的溫度是例如室溫以上800℃以下，理想是室溫以上500℃以下。此時，加熱器213的溫度是控制器280會根據藉由溫度感測器所檢測出的溫度資訊來抽出控制值，藉由溫度控制部220來控制朝加熱器213的通電情況，藉此調整。  　　[0072] 接著，說明在深溝形成薄膜的具體的方法。在此，利用圖7、圖8來說明有關例如以矽氧化膜所構成的充填絕緣膜110的例子。圖7是表示晶圓100的處理流程，圖8是說明處理流程的各工程與處理空間205、搬送空間206的壓力的關係的說明圖。  　　[0073] 將晶圓100昇溫至基板處理溫度之後，一面將晶圓100保持於預定溫度，一面進行伴隨加熱處理的以下的基板處理。亦即，經由共通氣體供給管242、淋浴頭230來將處理氣體朝向被配置於腔室202內的晶圓100的表面(處理面)供給，處理晶圓100。  　　[0074] 以下，說明有關使用DCS氣體作為第一處理氣體，使用氧(O 2)氣體作為第二處理氣體，在深溝形成矽氧化膜的例子。在此是進行重複交替供給不同的處理氣體的工程之交替供給處理。  　　[0075]   (第一處理氣體供給工程S202)  　　說明第一處理氣體供給工程S202。一旦加熱晶圓100而到達所望的溫度，則開啟閥243d，且以DCS氣體的流量成為預定的流量之方式調整質量流控制器243c。另外，DCS氣體的供給流量是例如100sccm以上800sccm以下。此時，開啟第三氣體供給系的閥245d，從第三氣體供給管245a供給N 2氣體。亦可從第一惰性氣體供給系流動N 2氣體。  　　[0076] 經由緩衝空間234來供給至處理空間205的DCS氣體是藉由熱來分解成矽成分等，供給至晶圓100上。藉由被供給的矽成分接觸於深溝的表面，在表面形成作為「第一元素含有層」的含矽層。含矽層是相當於形成的薄膜的先驅物。  　　[0077] 與將DCS氣體供給至處理空間205並行從第四氣體供給系246供給惰性氣體至搬送空間206。此時，控制成為處理空間205與搬送空間206的壓力差會成為預定的範圍內。具體而言，以搬送空間排氣系262及第四氣體供給系246來控制成為處理空間205與搬送空間206幾乎同壓，或稍微高的壓力。  　　[0078] 在此，第一壓力檢測部261d會檢測出處理空間205的壓力，第二壓力檢測部262d會檢測出搬送空間的壓力，控制器280會接受該等的檢測資料。控制器280是控制質量流控制器243c、質量流控制器248c、APC261c、APC262c，控制成為處理空間205與搬送空間206的壓力差會成為預定的範圍內。  　　[0079] 在供給開始時，將壓力差維持於預定的範圍之狀態下，慢慢地控制成為處理空間205、搬送空間206的壓力會慢慢地變高。  　　[0080] 在供給開始時也藉由將搬送空間206與處理空間205的壓力差維持於預定的範圍內，使搬送空間206與處理空間205之間的急劇的壓力差不會發生。一旦急劇的壓力差發生，則恐有搬送空間206內的氣氛或滯留於空間221的氣體的成分、附著的氣體的成分等的微粒擴散於處理空間205全域之虞。特別是搬送空間206的壓力高的情況顯著。該等微粒附著於晶圓100或附著於處理室壁等，恐有良品率降低之虞。於是，在供給開始時也將搬送空間206的壓力對應成為處理空間205的壓力差會成為預定的範圍內而抑制擴散。  　　[0081] 而且，藉由慢慢地提高處理空間205、搬送空間206的壓力，使更確實地不產生急劇的壓力差。  　　[0082] 在處理中也將處理空間205與搬送空間206設為同壓，或比處理空間205更提高搬送空間206的壓力，藉此抑制DCS氣體從處理空間205侵入至搬送空間206。另外，在圖8中，將處理空間205與搬送空間206的壓力分別設為P1，為同壓。壓力P1是設定成被分解的第一氣體含有氣體不會再結合的程度的壓力。  　　[0083] 將此時處理空間205、搬送空間206的各者的壓力控制成為例如50~300Pa之中預定的值。  　　[0084] 藉由設為如此的壓力值，矽成分的平均自由行程會變長，其結果矽成分可到達深溝的底部。所謂平均自由行程長，換言之，分解後的DCS氣體的衝突機率減少。亦即，分解後的DCS氣體再結合的機率低。因此，可在分解後的狀態下使矽成分到達至深溝的底部，其結果可在深溝的底部形成先驅物。  　　[0085] 經過預定時間後，關閉閥243d來停止DCS氣體的供給。最好是在關閉閥243d之前，控制質量流控制器243c、質量流控制器248c、APC261c、APC262c，而與供給開始時同樣，控制成為搬送空間206與處理空間205的壓力差會被維持於預定的範圍內。而且，最好使處理空間205、搬送空間206的壓力慢慢地變動。  　　[0086] 例如，在將壓力差維持於預定的範圍內之狀態下，慢慢地減少第一處理氣體的供給量，與此並行慢慢地減少從第四氣體供給系248供給的惰性氣體的供給量。  　　[0087] 藉由將壓力差維持於預定的範圍，使急劇的壓力差不會發生。而且，藉由慢慢地減少處理空間205、搬送空間206的壓力，使更確實地不產生急劇的壓力差。  　　[0088] 在供給第一處理氣體時，從第一惰性氣體供給管246a供給N 2時，考慮該N 2氣體的供給量，調整朝處理室的供給量或處理空間205的壓力。  　　[0089]   (第一淨化工程S204)  　　說明第一淨化工程S204。開啟閥254d來從第三氣體供給管245a供給N 2氣體，進行淋浴頭230及處理空間205的淨化。與此並行，開啟閥248d來從第四氣體供給管248a供給N 2氣體，控制成為處理空間205與搬送空間206的壓力差會成為預定的範圍內。例如，將處理空間205與搬送空間206控制成為同壓，或搬送空間206比處理空間205更稍微高的壓力。  　　[0090] 在此，與第一處理氣體供給工程S202同樣，以第一壓力檢測部261d、第二壓力檢測部262d所檢測出的檢測資料為依據，控制器280控制質量流控制器245c、質量流控制器248c、APC261c、APC262c，控制成為處理空間205與搬送空間206的壓力差會成為預定的範圍內。例如，將處理空間205與搬送空間206控制成為同壓，或搬送空間206比處理空間205更稍微高的壓力。  　　[0091] 在供給開始時，將壓力差維持於預定的範圍之狀態下，慢慢地控制成為處理空間205、搬送空間206的壓力會慢慢地變高。  　　[0092] 藉由將壓力差維持於預定的範圍，使急劇的壓力差不會發生。而且，藉由慢慢地提高處理空間205、搬送空間206的壓力，使更確實地不產生急劇的壓力差。  　　[0093] 藉由將處理空間205與搬送空間206設為同壓，或提高搬送空間206的壓力，使處理空間205中的殘餘氣體不會進入至搬送空間206。藉由使不進入，可不使在搬送空間206中以殘餘氣體為起因的微粒發生。  　　[0094] 將此時處理空間205、搬送空間206的壓力控制成為例如50~300Pa之中比P1更高的壓力的P2。如此一來由於惰性氣體的流速上升，因此可提升氣體的置換效率。亦即，可提前淨化在第一處理氣體供給工程S202所供給的第一處理氣體。另外，在圖8中是將處理空間205與搬送空間206的壓力設為同壓。  　　[0095] 經過預定時間後，關閉閥245d，停止N 2氣體的供給。  　　最好是在關閉閥245d之前，控制質量流控制器245c、質量流控制器248c、APC261c、APC262c，而控制成為搬送空間206與處理空間205的壓力差會被維持於預定的範圍內。而且，最好使處理空間205、搬送空間206的壓力慢慢地變動。  　　[0096] 例如，在將壓力差維持於預定的範圍內之狀態下，慢慢地減少來自第三氣體供給系245的惰性氣體供給量，與此並行慢慢地減少從第四氣體供給系248供給的惰性氣體的供給量。  　　[0097] 藉由將壓力差維持於預定的範圍，使急劇的壓力差不會發生。而且，藉由慢慢地提高處理空間205、搬送空間206的壓力，使更確實地不產生急劇的壓力差。  　　[0098]   (第二處理氣體供給工程S206)  　　說明第二處理氣體供給工程S206。第一淨化工程S204之後，開啟閥244d，經由淋浴頭230來對處理空間205內開始氧氣體的供給。  　　[0099] 此時，以氧氣體的流量會成為預定的流量之方式控制質量流控制器244c。另外，氧氣體的供給流量是例如100sccm以上6000sccm以下。另外，亦可與氧氣體一起從第二惰性氣體供給系流動N 2氣體作為載體氣體。並且，在此工程中也是第三氣體供給系的閥245d被開啟，從第三氣體供給管245a供給N 2氣體。  　　[0100] 氧氣體是在遠程電漿單元244e成為電漿狀態。電漿狀態的氧氣體是經由淋浴頭230來供給至晶圓100上。已被形成於深溝的含矽層會藉由氧氣體來改質，藉此形成以含有矽元素及氧元素的層所構成的薄膜。  　　[0101] 經過預定的時間後，關閉閥244d，停止氧氣體的供給。  　　[0102] 在第二處理氣體供給工程S206中也與上述的S202同樣，閥261b被開啟，藉由APC261c來控制成為處理空間205的壓力會成為預定的壓力。本工程的壓力是設為比第一處理氣體供給工程S202更高的壓力。理由後述。  　　[0103] 並且，與將氧氣體供給至處理空間205並行從第四氣體供給系246供給惰性氣體至搬送空間206。此時，控制成為處理空間205與搬送空間206的壓力差成為預定的範圍內。具體而言，以搬送空間排氣系262及第四氣體供給系246來控制成為處理空間205與搬送空間206幾乎同壓，或稍微高的壓力。  　　[0104] 在此是與第一處理氣體供給工程S202同樣，以第一壓力檢測部261d、第二壓力檢測部262d所檢測出的檢測資料為依據，控制器280控制質量流控制器244c、質量流控制器248c、APC261c、APC262c，與第一處理氣體供給工程S202同樣，控制成為處理空間205與搬送空間206的壓力差會成為預定的範圍內。  　　[0105] 在供給開始時也將搬送空間206與處理空間205的壓力差維持於預定的範圍之狀態下，慢慢地控制成為處理空間205、搬送空間206的壓力會慢慢地變高。  　　[0106] 藉由將壓力差維持於預定的範圍，使急劇的壓力差不會發生。而且，藉由慢慢地提高處理空間205、搬送空間206的壓力，使更確實地不產生急劇的壓力差。  　　[0107] 藉由將處理空間205與搬送空間206設為同壓，或提高搬送空間206的壓力，抑制氧氣體從處理空間205侵入至搬送空間206。另外，在圖8中，將處理空間205與搬送空間206的壓力設為比第一處理氣體供給工程S202更高的P3，為同壓。  　　[0108] 將此時處理空間205、搬送空間206的壓力控制成為例如100~1400Pa之中預定的值。這是氧成分可移動至深溝的底部的壓力，其結果可將深溝的底部的先驅物改質。因此，即使在深溝的底部也可形成薄膜。另外，當第二元素氣體為電漿狀態時，設為電漿不失活的程度的壓力。  　　[0109] 經過預定時間後，關閉閥244d，停止氧氣體的供給。  　　最好是在關閉閥244d之前，控制質量流控制器244c、質量流控制器248c、APC261c、APC262c，而控制成為搬送空間206與處理空間205的壓力差會被維持於預定的範圍內。而且，最好使處理空間205、搬送空間206的壓力慢慢地變動。  　　[0110] 例如，在將壓力差維持於預定的範圍內之狀態下，慢慢地減少第二處理氣體的供給量，與此並行慢慢地減少從第四氣體供給系248供給的惰性氣體的供給量。  　　[0111] 藉由將壓力差維持於預定的範圍，使急劇的壓力差不會發生。而且，藉由慢慢地減少處理空間205、搬送空間206的壓力，使更確實地不產生急劇的壓力差。  　　[0112] 在供給第二處理氣體時，從第二惰性氣體供給管247a供給N 2氣體時，考慮該N 2氣體的供給量，調整朝處理室的供給量或處理空間205的壓力。  　　[0113]   (第二淨化工程S208)  　　說明第二淨化工程S208。與第一淨化工程S204同樣，從第三氣體供給管245a供給N 2氣體，進行淋浴頭230及處理空間205的淨化。與此並行，從第四氣體供給管248a供給N 2氣體，控制成為處理空間205與搬送空間206的壓力差會成為預定的範圍內。例如，將處理空間205與搬送空間206控制成為同壓，或搬送空間206比處理空間205更稍微高的壓力。  　　[0114] 在供給開始時，將壓力差維持於預定的範圍之狀態下，慢慢地控制成為處理空間205、搬送空間206的壓力會慢慢地變高。  　　[0115] 將此時處理空間205、搬送空間206的壓力設為比淨化工程S204更高的壓力。控制成為例如20~300Pa之中預定的值。  　　藉由設為如此的壓力值，如此一來由於惰性氣體的流速上升，因此可提升氣體的置換效率。亦即，可提前淨化在第二處理氣體供給工程S206所供給的第二處理氣體。  　　另外，在圖8中，將處理空間205及搬送空間206的壓力分別設為P3，為同壓。  　　[0116] 經過預定時間後，關閉閥245d，停止N 2氣體的供給。  　　最好是在關閉閥245d之前，控制質量流控制器245c、質量流控制器248c、APC261c、APC262c，而控制成為搬送空間206與處理空間205的壓力差會被維持於預定的範圍內。而且，最好使處理空間205、搬送空間206的壓力慢慢地變動。  　　[0117] 例如，在將壓力差維持於預定的範圍內之狀態下，慢慢地減少來自第三氣體供給系245的惰性氣體供給量，與此並行慢慢地減少從第四氣體供給系248供給的惰性氣體的供給量。  　　[0118]   
(判定S210)
說明判定S210。控制器280是判定是否預定次數(n cycle)實施了上述1循環。
未實施預定次數時(在S210，No的情況)，重複第一處理氣體供給工程S202、淨化工程S204、第二處理氣體供給工程S206、淨化工程S208的循環。實施預定次數時(在S210，Yes的情況)，終了圖7所示的處理。
(基板搬出工程)
在基板搬出工程中，使基板載置台212下降，在從基板載置台212的表面突出的昇降銷207上使支撐晶圓100。藉此，晶圓100是從處理位置成為搬送位置。然後，開啟閘閥149，利用手臂(未圖示)來將晶圓100搬出至腔室202之外。
藉由以上說明的技術，對於深寬比高的深溝，也可在深溝的底部形成薄膜。
另外，在上述的實施形態中，說明有關使用含矽氣體作為第一處理氣體，使用氧氣體作為第二處理氣體，在深溝形成矽氧化膜的情況，但不限於此。作為第一處理氣體，是只要具有分解容易的性質即可，例如亦可為HCD(Si2Cl6)或TDMAS(SiH(N(CH3)2)3)。又，作為第二處理氣體，是不限於O2氣體，亦可為臭氧或HO等。又，第二元素是不限於氧，亦可為氮。特別是臭氧的情況，由於在單體具有高的能量，所以亦可不形成電漿狀態。因此， 電漿為失活的程度高壓時，亦可使用臭氧。
並且，舉N2氣體作為惰性氣體例進行說明，但不限於此，只要是不與處理氣體反應的氣體即可。例如可使用氦(He)氣體、氖(Ne)氣體、氬(Ar)氣體等的稀有氣體。
100‧‧‧晶圓(基板)
102‧‧‧絕緣膜
103‧‧‧犧牲膜
106‧‧‧孔
111‧‧‧空隙
200‧‧‧基板處理裝置
148‧‧‧基板搬出入口
149‧‧‧閘閥
202‧‧‧腔室
202a‧‧‧上部容器
202b‧‧‧下部容器
205‧‧‧處理空間
206‧‧‧搬送空間
207‧‧‧昇降銷
208‧‧‧隔板
210‧‧‧基板支撐部
211‧‧‧基板載置面
212‧‧‧基板載置台
212a‧‧‧凸緣部
213‧‧‧加熱器
214‧‧‧貫通孔
215‧‧‧底壁的孔
216‧‧‧支撐板
217‧‧‧軸
218‧‧‧昇降機構
219‧‧‧波紋管
220‧‧‧溫度控制部
221‧‧‧空間
230‧‧‧淋浴頭
231‧‧‧蓋
232‧‧‧凸緣
233‧‧‧定位部
234‧‧‧緩衝空間
242‧‧‧共通氣體供給管
243‧‧‧第一氣體供給系
243a‧‧‧第一氣體供給管
243b‧‧‧第一氣體供給源
243c‧‧‧質量流控制器(MFC)
243d‧‧‧開閉閥的閥
244‧‧‧第二氣體供給系
244a‧‧‧第二氣體供給管
244b‧‧‧反應氣體供給源
244c‧‧‧質量流控制器(MFC)
244d‧‧‧開閉閥的閥
244e‧‧‧遠程電漿單元(RPU)
245‧‧‧第三氣體供給系
245a‧‧‧第三氣體供給管
245b‧‧‧惰性氣體供給源
245c‧‧‧質量流控制器
245d‧‧‧閥
246a‧‧‧第一惰性氣體供給管
246b‧‧‧惰性氣體供給源
246c‧‧‧質量流控制器(MFC)
246d‧‧‧開閉閥的閥
247a‧‧‧第二惰性氣體供給管
247b‧‧‧惰性氣體供給源
247c‧‧‧質量流控制器(MFC)
247d‧‧‧開閉閥的閥
248‧‧‧第四氣體供給系
248a‧‧‧第四氣體供給管
248b‧‧‧第四氣體供給源
248c‧‧‧質量流控制器(MFC)
248d‧‧‧開閉閥的閥
261‧‧‧處理空間排氣系
261a‧‧‧第1排氣管
261b‧‧‧閥
261c‧‧‧壓力控制器
261d‧‧‧第一壓力檢測部
262‧‧‧搬送空間排氣系
262a‧‧‧第2排氣管
262b‧‧‧閥
262c‧‧‧壓力控制器
262d‧‧‧第二壓力檢測部
262e‧‧‧泵
264‧‧‧第3排氣管
278‧‧‧乾式泵
280‧‧‧控制器
[0008]   　　圖1是說明基板處理裝置的說明圖。  　　圖2是說明基板處理裝置的控制器的說明圖。  　　圖3是說明晶圓的處理狀態的說明圖。  　　圖4是說明晶圓的處理狀態的說明圖。  　　圖5是說明晶圓的處理狀態的說明圖。  　　圖6是說明晶圓的處理狀態的說明圖。  　　圖7是說明半導體裝置的製造流程的說明圖。  　　圖8是說明製造流程與處理空間、搬送空間的壓力的關係的說明圖。
100：晶圓(基板) 148：基板搬出入口
149：閘閥 200：基板處理裝置
202：腔室 202a：上部容器
202b：下部容器 205：處理空間
206：搬送空間 207：昇降銷
208：隔板 210：基板支撐部
211：基板載置面 212：基板載置台
212a：凸緣部 213：加熱器
214：貫通孔 215：底壁的孔
216：支撐板 217：軸
218：昇降機構 219：波紋管
220：溫度控制部 221：空間
230：淋浴頭 231：蓋
232：凸緣 233：定位部
234：緩衝空間 242：共通氣體供給管
243：第一氣體供給系 243a：第一氣體供給管
243b：第一氣體供給源 243c：質量流控制器(MFC)
243d：開閉閥的閥 244：第二氣體供給系
244a：第二氣體供給管 244b：反應氣體供給源
244c：質量流控制器(MFC) 244d：開閉閥的閥
244e：遠程電漿單元(RPU) 245：第三氣體供給系
245a：第三氣體供給管 245b：惰性氣體供給源
245c：質量流控制器 245d：閥
246a：第一惰性氣體供給管 246b：惰性氣體供給源
246c：質量流控制器(MFC) 246d：開閉閥的閥
247a：第二惰性氣體供給管 247b：惰性氣體供給源
247c：質量流控制器(MFC) 247d：開閉閥的閥
248：第四氣體供給系 248a：第四氣體供給管
248b：第四氣體供給源 248c：質量流控制器(MFC)
248d：開閉閥的閥 261：處理空間排氣系
261a：第1排氣管 261b：閥
261c：壓力控制器 261d：第一壓力檢測部
262：搬送空間排氣系 262a：第2排氣管
262b：閥 262c：壓力控制器
262d：第二壓力檢測部 262e：泵
264：第3排氣管 278：乾式泵
280：控制器  

Claims (18)

  1. 一種半導體裝置的製造方法，其特徵係具有：  　　將具有深溝的基板經由基板搬出入口來搬入至搬送空間之工程；  　　將前述基板移動至處理空間之工程；  　　前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第一處理氣體供給至前述處理空間而設為第一壓力，在前述深溝形成先驅物，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第一壓力的壓力差維持於預定的範圍之第一處理氣體供給工程；及  　　前述第一處理氣體供給工程之後，前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第二處理氣體供給至前述處理空間而設為比第一壓力更高的第二壓力，將被形成於前述深溝的前述先驅物改質而形成薄膜，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第二壓力的壓力差維持於前述預定的範圍之第二處理氣體供給工程。
  2. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述第一壓力為前述第一處理氣體不再結合的壓力。
  3. 如申請專利範圍第2項之半導體裝置的製造方法，其中，在前述第一處理氣體供給工程中，將前述搬送空間的壓力與前述處理空間的壓力形成同壓，或將前述搬送空間的壓力形成比前述處理空間的壓力更高。
  4. 如申請專利範圍第3項之半導體裝置的製造方法，其中，在前述第二處理氣體供給工程中，將前述搬送空間的壓力與前述處理空間的壓力形成同壓，或將前述搬送空間的壓力形成比前述處理空間的壓力更高。
  5. 如申請專利範圍第4項之半導體裝置的製造方法，其中，前述第一處理氣體，係具有分解容易的性質。
  6. 如申請專利範圍第3項之半導體裝置的製造方法，其中，前述第一處理氣體，係具有分解容易的性質。
  7. 如申請專利範圍第2項之半導體裝置的製造方法，其中，在前述第二處理氣體供給工程中，將前述搬送空間的壓力與前述處理空間的壓力形成同壓，或將前述搬送空間的壓力形成比前述處理空間的壓力更高。
  8. 如申請專利範圍第7項之半導體裝置的製造方法，其中，前述第一處理氣體，係具有分解容易的性質。
  9. 如申請專利範圍第2項之半導體裝置的製造方法，其中，前述第一處理氣體，係具有分解容易的性質。
  10. 如申請專利範圍第1項之半導體裝置的製造方法，其中，在前述第一處理氣體供給工程中，將前述搬送空間的壓力與前述處理空間的壓力形成同壓，或將前述搬送空間的壓力形成比前述處理空間的壓力更高。
  11. 如申請專利範圍第10項之半導體裝置的製造方法，其中，在前述第二處理氣體供給工程中，將前述搬送空間的壓力與前述處理空間的壓力形成同壓，或將前述搬送空間的壓力形成比前述處理空間的壓力更高。
  12. 如申請專利範圍第11項之半導體裝置的製造方法，其中，前述第一處理氣體，係具有分解容易的性質。
  13. 如申請專利範圍第10項之半導體裝置的製造方法，其中，前述第一處理氣體，係具有分解容易的性質。
  14. 如申請專利範圍第1項之半導體裝置的製造方法，其中，在前述第二處理氣體供給工程中，將前述搬送空間的壓力與前述處理空間的壓力形成同壓，或將前述搬送空間的壓力形成比前述處理空間的壓力更高。
  15. 如申請專利範圍第14項之半導體裝置的製造方法，其中，前述第一處理氣體，係具有分解容易的性質。
  16. 如申請專利範圍第1項之半導體裝置的製造方法，其中，前述第一處理氣體，係具有分解容易的性質。
  17. 一種基板處理裝置，其特徵係具有：  　　搬送室，其係與基板搬出入口鄰接，具有搬送基板的搬送空間；  　　處理室，其係為前述搬送室的上方，具有處理基板的處理空間；  　　基板支撐部，其係支撐在前述處理空間被處理之具有深溝的基板；  　　處理氣體供給部，其係供給處理氣體至前述處理空間；  　　惰性氣體供給部，其係供給惰性氣體至前述搬送空間；  　　控制部，其係實行：  　　前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第一處理氣體供給至前述處理空間而設為第一壓力，在前述深溝形成先驅物，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第一壓力的壓力差維持於預定的範圍之程序；及  　　然後，前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第二處理氣體供給至前述處理空間而設為比第一壓力更高的第二壓力，將被形成於前述深溝的前述先驅物改質而形成薄膜，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第二壓力的壓力差維持於前述預定的範圍之程序。
  18. 一種程式，其特徵係藉由電腦來使下列程序實行於基板處理裝置，  　　將具有深溝的基板經由基板搬出入口來搬入至搬送空間之程序；  　　將前述基板移動至處理空間之程序；  　　前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第一處理氣體供給至前述處理空間而設為第一壓力，在前述深溝形成先驅物，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第一壓力的壓力差維持於預定的範圍之程序；及  　　然後，前述處理空間與前述搬送空間連通，在前述處理空間有前述基板的狀態下，將第二處理氣體供給至前述處理空間而設為比第一壓力更高的第二壓力，將被形成於前述深溝的前述先驅物改質而形成薄膜，且將惰性氣體供給至前述搬送空間，將前述搬送空間的壓力與前述第二壓力的壓力差維持於前述預定的範圍之程序。
TW107106494A 2018-02-07 2018-02-27 半導體裝置的製造方法、基板處理裝置及程式 TWI682460B (zh)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140170320A1 (en) * 2012-12-18 2014-06-19 Tokyo Electron Limited Thin film forming method and thin film forming apparatus
US20160148801A1 (en) * 2014-11-25 2016-05-26 Tokyo Electron Limited Substrate processing apparatus, substrate processing method and storage medium

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7592569B2 (en) * 2004-10-21 2009-09-22 Tokyo Electron Limited Substrate processing apparatus, pressure control method for substrate processing apparatus and recording medium having program recorded therein
WO2007132884A1 (ja) 2006-05-17 2007-11-22 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
US9076879B2 (en) 2012-09-11 2015-07-07 Samsung Electronics Co., Ltd. Three-dimensional semiconductor memory device and method for fabricating the same
JP5950892B2 (ja) * 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP5852151B2 (ja) * 2014-02-12 2016-02-03 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
JP5800964B1 (ja) * 2014-07-22 2015-10-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
JP6001131B1 (ja) * 2015-04-28 2016-10-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
JP5941589B1 (ja) 2015-09-14 2016-06-29 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6436887B2 (ja) 2015-09-30 2018-12-12 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
JP6285411B2 (ja) * 2015-12-25 2018-02-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6242933B2 (ja) * 2016-03-31 2017-12-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
JP2018093045A (ja) * 2016-12-02 2018-06-14 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140170320A1 (en) * 2012-12-18 2014-06-19 Tokyo Electron Limited Thin film forming method and thin film forming apparatus
US20160148801A1 (en) * 2014-11-25 2016-05-26 Tokyo Electron Limited Substrate processing apparatus, substrate processing method and storage medium

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