CN1101057C - 用副图形辅助主图形精确对准时光掩模及其制造工艺 - Google Patents
用副图形辅助主图形精确对准时光掩模及其制造工艺 Download PDFInfo
- Publication number
- CN1101057C CN1101057C CN96106865A CN96106865A CN1101057C CN 1101057 C CN1101057 C CN 1101057C CN 96106865 A CN96106865 A CN 96106865A CN 96106865 A CN96106865 A CN 96106865A CN 1101057 C CN1101057 C CN 1101057C
- Authority
- CN
- China
- Prior art keywords
- translucent
- photomask
- opacity
- zone
- nontransparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP163895/95 | 1995-06-29 | ||
JP16389595 | 1995-06-29 | ||
JP163895/1995 | 1995-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1214532A CN1214532A (zh) | 1999-04-21 |
CN1101057C true CN1101057C (zh) | 2003-02-05 |
Family
ID=15782856
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN96106865A Expired - Fee Related CN1101057C (zh) | 1995-06-29 | 1996-06-28 | 用副图形辅助主图形精确对准时光掩模及其制造工艺 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5786113A (zh) |
KR (1) | KR100186657B1 (zh) |
CN (1) | CN1101057C (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3241628B2 (ja) * | 1997-03-21 | 2001-12-25 | シャープ株式会社 | 半導体装置の製造装置 |
US6607829B1 (en) | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
JP3161411B2 (ja) * | 1998-04-02 | 2001-04-25 | 日本電気株式会社 | フォトマスクとその製造方法 |
JP2000267258A (ja) * | 1999-03-16 | 2000-09-29 | Nec Corp | レチクル |
US6458493B2 (en) | 1999-06-04 | 2002-10-01 | International Business Machines Corporation | Method to control nested to isolated line printing |
JP2001183809A (ja) | 1999-12-24 | 2001-07-06 | Nec Corp | フォトマスク及びフォトマスク製造方法 |
KR100355231B1 (ko) | 2000-02-15 | 2002-10-11 | 삼성전자 주식회사 | 반도체 메모리 소자 개구부 제조용 포토마스크, 이를 사용한 사진 식각 방법 및 이 방법에 의해 제조된 개구부를 포함하는 반도체 메모리 소자 |
DE10021096A1 (de) * | 2000-04-20 | 2001-10-31 | Infineon Technologies Ag | Maske für optische Projektionssysteme und ein Verfahren zu ihrer Herstellung |
JP2001312045A (ja) * | 2000-05-02 | 2001-11-09 | Sharp Corp | マスクの形成方法 |
KR100587366B1 (ko) * | 2000-08-30 | 2006-06-08 | 엘지.필립스 엘시디 주식회사 | 횡전계방식 액정표시장치 및 그 제조방법 |
JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法 |
DE10310136B4 (de) * | 2003-03-07 | 2007-05-03 | Infineon Technologies Ag | Maskensatz zur Projektion von jeweils auf den Masken des Satzes angeordneten und aufeinander abgestimmten Strukturmustern auf einen Halbleiterwafer |
KR100674991B1 (ko) * | 2005-09-02 | 2007-01-29 | 삼성전자주식회사 | 토폴로지를 갖는 보상층을 구비한 바이너리 포토 마스크 및그 제조방법 |
US7579121B2 (en) * | 2005-10-07 | 2009-08-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Optical proximity correction photomasks |
KR101190045B1 (ko) * | 2005-12-21 | 2012-10-12 | 엘지디스플레이 주식회사 | 포토 마스크 및 이를 이용한 액정표시장치용 어레이 기판의제조 방법 |
JP4791198B2 (ja) * | 2006-02-03 | 2011-10-12 | パナソニック株式会社 | フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法 |
KR20080107242A (ko) * | 2006-03-06 | 2008-12-10 | 파나소닉 주식회사 | 포토마스크, 그 작성방법, 그 포토마스크를 이용한패턴형성방법 및 마스크데이터 작성방법 |
KR100831675B1 (ko) * | 2006-05-09 | 2008-05-22 | 주식회사 하이닉스반도체 | 베스트 포커스를 설정하기 위한 포토 마스크 및 이를이용한 베스트 포커스 설정방법 |
KR100734318B1 (ko) * | 2006-06-12 | 2007-07-02 | 삼성전자주식회사 | 포토 마스크의 cd 보정 방법 및 cd가 보정된 포토마스크 |
CN102308256B (zh) * | 2009-02-16 | 2013-09-25 | 大日本印刷株式会社 | 光掩模、光掩模的制造方法及修正方法 |
US8524443B2 (en) * | 2010-07-07 | 2013-09-03 | Eulitha A.G. | Method and apparatus for printing a periodic pattern with a large depth of focus |
US8440371B2 (en) | 2011-01-07 | 2013-05-14 | Micron Technology, Inc. | Imaging devices, methods of forming same, and methods of forming semiconductor device structures |
JPWO2013121485A1 (ja) | 2012-02-13 | 2015-05-11 | パナソニックIpマネジメント株式会社 | フォトマスク及びそれを用いたパターン形成方法 |
JP2015204351A (ja) * | 2014-04-14 | 2015-11-16 | セイコーエプソン株式会社 | 感光膜の設置方法、半導体装置の製造方法、電気光学装置および電子機器 |
CN113296352B (zh) * | 2020-02-22 | 2023-01-24 | 长鑫存储技术有限公司 | 应用于半导体光刻工艺中的掩膜图形及光刻工艺方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05165194A (ja) * | 1991-12-16 | 1993-06-29 | Nec Corp | フォトマスク |
JPH06188270A (ja) * | 1992-12-15 | 1994-07-08 | Mitsubishi Electric Corp | 電界効果トランジスタの製造方法及びパターン転写マスク |
KR100187664B1 (ko) * | 1994-02-07 | 1999-06-01 | 김주용 | 중첩 패턴 형성용 마스크 제조방법 |
-
1996
- 1996-06-24 US US08/670,768 patent/US5786113A/en not_active Expired - Fee Related
- 1996-06-28 KR KR1019960025340A patent/KR100186657B1/ko not_active IP Right Cessation
- 1996-06-28 CN CN96106865A patent/CN1101057C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR970002487A (ko) | 1997-01-24 |
KR100186657B1 (ko) | 1999-04-01 |
US5786113A (en) | 1998-07-28 |
CN1214532A (zh) | 1999-04-21 |
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C06 | Publication | ||
PB01 | Publication | ||
CI01 | Correction of invention patent gazette |
Correction item: Denomination of Invention Correct: Accurate alignment of time masks with auxiliary graphics for master graphics and its manufacturing process False: Optical mask for aligner used for accurate conversion of master graphics from translucent sub graphics and manufacturing process thereof Number: 16 Page: 64 Volume: 15 |
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ERR | Gazette correction |
Free format text: CORRECT: INVENTION NAME |
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C14 | Grant of patent or utility model | ||
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Owner name: NEC ELECTRONICS TAIWAN LTD. Free format text: FORMER OWNER: NIPPON ELECTRIC CO., LTD. Effective date: 20030620 |
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Effective date of registration: 20030620 Address after: Kanagawa, Japan Patentee after: NEC Corp. Address before: Tokyo, Japan Patentee before: NEC Corp. |
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