CN110100313A - 一种增强型开关器件及其制造方法 - Google Patents

一种增强型开关器件及其制造方法 Download PDF

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CN110100313A
CN110100313A CN201780052620.1A CN201780052620A CN110100313A CN 110100313 A CN110100313 A CN 110100313A CN 201780052620 A CN201780052620 A CN 201780052620A CN 110100313 A CN110100313 A CN 110100313A
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type semiconductor
semiconductor layer
layer
switching device
barrier layer
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CN110100313B (zh
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程凯
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Enkris Semiconductor Inc
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Enkris Semiconductor Inc
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
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Abstract

一种增强型开关器件及其制造方法，解决了现有增强型开关器件的制造工艺复杂以及稳定性和可靠性差的问题。其中的增强型开关器件包括：衬底(1)；依次设于所述衬底(1)上的沟道层(23)以及势垒层(24)；形成于所述势垒层(24)上的n型半导体层(3)，所述n型半导体层(3)的表面上定义有栅极区域；形成于所述栅极区域且至少部分贯穿所述n型半导体层(3)的凹槽(4)；以及形成于所述n型半导体层(3)表面并至少填充所述凹槽(4)内部的p型半导体材料(5)。

Description

PCT国内申请，说明书已公开。

Claims (15)

  1. PCT国内申请，权利要求书已公开。
CN201780052620.1A 2017-06-09 2017-06-09 一种增强型开关器件及其制造方法 Active CN110100313B (zh)

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CN115244709A (zh) * 2020-03-19 2022-10-25 苏州晶湛半导体有限公司 半导体结构及其制作方法
CN113113476A (zh) * 2021-03-01 2021-07-13 西安电子科技大学 适用于低工作电压高效率应用的GaN HEMT器件及制备方法
CN114038909B (zh) * 2021-10-22 2024-05-17 北京大学深圳研究生院 增强型氮化镓功率器件及其制备方法
WO2024026279A1 (en) * 2022-07-25 2024-02-01 Transphorm Technology, Inc. High voltage iii-n devices and structures with reduced current degradation
CN116613065B (zh) * 2023-04-28 2024-06-11 深圳智慧脑科技有限公司 一种增强型氮化镓hemt器件及制造方法

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CN102709321A (zh) * 2012-04-20 2012-10-03 程凯 增强型开关器件及其制造方法
CN103325681A (zh) * 2012-03-20 2013-09-25 宁波敏泰光电科技有限公司 一种离子自对准注入的超结mosfet及其制造方法
CN104051522A (zh) * 2014-07-02 2014-09-17 苏州晶湛半导体有限公司 一种增强型氮化物半导体器件及其制造方法

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US20090146182A1 (en) * 2007-12-10 2009-06-11 Masahiro Hikita Nitride semiconductor device and method for fabricating the same
CN103325681A (zh) * 2012-03-20 2013-09-25 宁波敏泰光电科技有限公司 一种离子自对准注入的超结mosfet及其制造方法
CN102683394A (zh) * 2012-04-17 2012-09-19 程凯 一种增强型器件及其制造方法
CN102709321A (zh) * 2012-04-20 2012-10-03 程凯 增强型开关器件及其制造方法
CN104051522A (zh) * 2014-07-02 2014-09-17 苏州晶湛半导体有限公司 一种增强型氮化物半导体器件及其制造方法

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US20200119177A1 (en) 2020-04-16
EP3637475A1 (en) 2020-04-15
EP3637475A4 (en) 2020-06-17
TWI756435B (zh) 2022-03-01
US10998435B2 (en) 2021-05-04
TW201903970A (zh) 2019-01-16
WO2018223387A1 (zh) 2018-12-13
CN110100313B (zh) 2020-11-17

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