CN110060934B - Manufacturing process of four-diode integrated chip - Google Patents

Manufacturing process of four-diode integrated chip Download PDF

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CN110060934B
CN110060934B CN201910358275.5A CN201910358275A CN110060934B CN 110060934 B CN110060934 B CN 110060934B CN 201910358275 A CN201910358275 A CN 201910358275A CN 110060934 B CN110060934 B CN 110060934B
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wafer substrate
silicon wafer
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dioxide film
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CN110060934A (en
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吴念博
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Suzhou Goodark Electronics Co ltd
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Suzhou Goodark Electronics Co ltd
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/298—Semiconductor material, e.g. amorphous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3178—Coating or filling in grooves made in the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions

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Abstract

A manufacturing process of four diode integrated chips; the method comprises the following steps: forming a first silicon dioxide film layer on the upper surface and the lower surface of a silicon wafer substrate; etching and removing isolation belt areas of the first silicon dioxide film layers on the upper surface and the lower surface; carrying out first doping on the isolation belt region to form a first P+ region, forming isolation walls in a penetrating manner in the up-down direction, and isolating four spacing blocks in the silicon wafer substrate; forming a second silicon dioxide film layer; etching and removing the peripheral area on the second silicon dioxide film layer; performing second doping on the peripheral region to form an N+ region; forming a third silicon dioxide film layer; etching and removing the four second interval regions on the third silicon dioxide film layer; performing first doping on the second interval region to form a second P+ region; forming a groove in the edge area of the second P+ region; forming a polycrystalline silicon passivation composite film layer; forming a glass passivation layer in the trench; exposing the N+ region and the second P+ region; and depositing a metal layer on the surfaces of the N+ region and the second P+ region to form a metal electrode.

Description

Manufacturing process of four-diode integrated chip
Technical Field
The invention relates to a diode manufacturing process, in particular to a manufacturing process of four diode integrated chips.
Background
Diodes are widely used in various circuits, so that the diodes are arranged at all the circuits, and the unidirectional conduction characteristic of the diodes is utilized to convert alternating current into direct current, so that the terminal part of the circuit can obtain stable direct current input. The existing manufacturing method of the rectifier diode takes an N type < 111 > crystal orientation monocrystalline silicon wafer as a basic material, performs primary boron doping on the upper surface of the silicon wafer to form a flat P region, then performs primary phosphorus diffusion on the lower surface to form a flat N region, and then performs procedures such as photoetching, metallization, alloy and the like to finally form a PN structure and electrode metal of the diode to manufacture the rectifier diode.
The deficiencies of the prior art include:
1. when a bridge rectifier circuit is required to be formed, four independent diodes are usually required to be electrically connected, so that miniaturization of products is not facilitated, the process flow is complex, and the manufacturing cost is high;
2. the existing diode structure has leakage current on the side wall, and the reliability of the device is low;
3. the above-mentioned existing diode is turned off in reverse and turned on in forward direction during operation, and the diode will continuously generate heat due to its own forward voltage drop during forward current conduction, where p=u×i (where U is the forward voltage drop and I is the current representing normal operation). The part of power consumption of diode heating not only affects the reliability and service life of the device due to continuous heating, but also consumes a great amount of unnecessary energy, which is not in line with the current environment-friendly requirement of green energy conservation.
Therefore, how to solve the above-mentioned drawbacks of the prior art is a subject to be studied and solved by the present invention.
Disclosure of Invention
The invention aims to provide a manufacturing process of four diode integrated chips.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a manufacturing process of four diode integrated chips; selecting a silicon wafer substrate, and then performing the following steps:
the method comprises the steps that a first silicon dioxide film layer is formed on the upper surface and the lower surface of a silicon wafer substrate;
the second step, mask the four first interval areas on the first silicon dioxide film layer on the upper surface and the lower surface of the silicon wafer substrate through photoresist respectively, and etch and remove the exposed first silicon dioxide film layer on the upper surface and the lower surface of the silicon wafer substrate respectively to remove the isolation zone areas outside the four first interval areas by taking the photoresist as the mask layer;
third, first impurity doping is carried out on the upper surface and the lower surface of the silicon wafer substrate for the first doping of the isolation zone region, so that a first P+ region or a first N+ region is formed in the isolation zone region on the upper surface and the lower surface of the silicon wafer substrate; the first P+ region on the upper surface is connected with the first P+ region on the lower surface to form a first P+ region which penetrates through the silicon wafer substrate in the up-down direction to form a partition wall, or the first N+ region on the upper surface is connected with the first N+ region on the lower surface to form a first N+ region which penetrates through the silicon wafer substrate in the up-down direction to form a partition wall; four spacing blocks which are horizontally arranged at intervals are isolated from the silicon wafer substrate through the isolation wall, so that early preparation is made for the subsequent formation of four diodes;
step four, removing the first silicon dioxide film layer, cleaning the upper surface and the lower surface of the silicon wafer substrate, and then forming a second silicon dioxide film layer respectively;
fifthly, masking four second interval areas and the isolation belt areas on the second silicon dioxide film layer on the upper surface of the silicon wafer substrate through photoresist; the second interval regions are in one-to-one correspondence with the first interval regions, and the area of each second interval region is smaller than that of each first interval region; etching and removing peripheral areas which are outside the four second interval areas and are positioned in the four first interval areas on the exposed second silicon dioxide film layer by taking the photoresist as a mask layer;
a sixth step of doping a second impurity, wherein the four peripheral regions are doped on the upper surface of the silicon wafer substrate, so that an N+ region or a P+ region is formed in the peripheral regions, and the doping concentration of the surface of the N+ region is at least 10 21 atm/cm 3 The diffusion depth is 30-50 mu m, and the doping concentration of the surface of the P+ region is at least 10 21 atm/cm 3 The diffusion depth is 50-70 mu m;
seventh, removing the second silicon dioxide film layer, cleaning the upper surface and the lower surface of the silicon wafer substrate, and then forming a third silicon dioxide film layer respectively;
eighth step, mask the peripheral area and the isolation zone area through photoresist, and etch and remove the exposed four second interval areas on the third silicon dioxide film layer by taking the photoresist as a mask layer, wherein the second interval areas are arranged at intervals with the peripheral area;
a ninth step of performing first impurity doping for the second time, and performing first doping on each second interval region on the upper surface of the silicon wafer substrate, so as to form a second P+ region or a second N+ region in the second interval region, wherein the doping concentration of the surface of the second P+ region is at least 10 21 atm/cm 3 The diffusion depth is 50-70 mu m, and the doping concentration of the surface of the second N+ region is at least 10 21 atm/cm 3 The diffusion depth is 30-50 μm;
tenth, forming grooves in the edge areas of the second P+ regions or the second N+ regions, wherein the depth of the grooves is 20-40 um;
eleventh step, the third silicon dioxide film layer is removed, the upper surface of the silicon wafer substrate and the groove are cleaned, and then a polysilicon passivation composite film layer is formed;
twelfth, forming a glass passivation layer on the surface of the polycrystalline silicon passivation composite film layer in the groove;
removing the polysilicon passivation composite film layer on the surfaces of the peripheral region and the second interval region, and exposing the N+ region or the P+ region and the second P+ region or the second N+ region;
and fourteenth step, depositing metal layers on the surfaces of the N+ region or the P+ region and the second P+ region or the second N+ region to form a metal electrode.
The relevant content explanation in the technical scheme is as follows:
1. in the above scheme, the silicon wafer substrate is in an N-type (111) crystal orientation, the first impurity doping is boron impurity doping or gallium impurity doping, and the second impurity doping is phosphorus impurity doping or arsenic impurity doping;
the first impurities are doped in the isolation zone areas on the upper surface and the lower surface of the silicon wafer substrate for the first time to form first P+ areas; the second impurities are doped in four peripheral areas on the upper surface of the silicon wafer substrate to form an N+ area; the second first impurities are doped in each second interval region on the upper surface of the silicon wafer substrate to form a second P+ region;
the groove is formed in the edge area of the second P+ region.
2. In the above scheme, the silicon wafer substrate has a P-type (111) crystal orientation, the first impurity is doped with phosphorus impurity or arsenic impurity, and the second impurity is doped with boron impurity or gallium impurity;
the first impurity is doped in the isolation zone areas on the upper surface and the lower surface of the silicon wafer substrate for the first time to form a first N+ area; the second impurities are doped in four peripheral areas on the upper surface of the silicon wafer substrate to form a P+ area; the second first impurities are doped in each second interval region on the upper surface of the silicon wafer substrate to form a second N+ region;
the groove is formed in the edge area of the second N+ region.
3. In the above scheme, the distance between the second interval region and the peripheral region is 200-300 um.
4. In the above scheme, the process conditions for forming the first silicon dioxide film layer, the second silicon dioxide film layer and the third silicon dioxide film layer are as follows: in the 1150+ -0.5 ℃ furnace tube, an oxygen atmosphere of 30+ -5 minutes is firstly passed, then a water vapor atmosphere of 480+ -10 minutes is passed, and finally an oxygen atmosphere of 30+ -5 minutes is passed.
5. In the scheme, the silicon wafer substrate is in an N-type (111) crystal orientation, and the process conditions for doping the phosphorus impurities are as follows: firstly, in a furnace tube at 1100+/-0.5 ℃ for 2+/-0.05 hours, wherein the atmosphere is phosphorus oxychloride; soaking hydrofluoric acid for 30+ -5 min after discharging, and then soaking in 1250+ -0.5deg.C furnace tube for 4+ -0.05 hr under N atmosphere 2 Is carried out under conditions such that the n+ region is formed by diffusion of phosphorus atoms.
6. In the above scheme, the silicon wafer substrate has an N < 111 > crystal orientation, and the second boron impurity doping process conditions are as follows: firstly, coating a liquid boron source on the surface of a second interval region, wherein the time is 2+/-0.05 hours in a furnace tube at 1150+/-0.5 ℃, and the atmosphere is nitrogen; after discharging, the second P+ region is formed by diffusion of boron atoms by immersing hydrofluoric acid for 30+ -5 minutes and then in a furnace tube at 1250+ -0.5 ℃ for 18+ -0.05 hours under the condition that the atmosphere is nitrogen.
7. In the above scheme, in the eleventh step, the polysilicon passivation composite film layer is formed by depositing by CVD process, and the process conditions are as follows: firstly, introducing silane gas and nitrous oxide gas at the temperature of 650+/-1 ℃ for 25+/-1 minutes, wherein the flow rate of the silane gas is 130+/-5 ml per minute, and the flow rate of the nitrous oxide gas is 30+/-2 ml per minute; then, continuing to introduce silane gas and nitrous oxide gas at 780+ -1deg.C for 15+ -0.5 min at the flow rates of SiH 4 25.+ -.5 ml and N per minute 2 80+ -5 ml of O per minute; finally forming a layer of polycrystalline silicon passivation composite film layer of the oxygen-containing polycrystalline silicon passivation film and the silicon dioxide film.
8. In the above scheme, in step twelve, the process conditions for forming the glass passivation layer in the trench are as follows: and filling glass cement with the thickness of 25-35 mu m in the groove, and then forming a compact glass passivation layer through high-temperature sintering, wherein the temperature is 830+/-10 ℃ and the time is 30+/-5 minutes.
9. In the above scheme, the silicon wafer substrate has an N < 111 > crystal orientation, the first P+ region is in a cross shape, and the silicon wafer substrate is horizontally isolated into four spacing blocks which are arranged in a shape of a Chinese character 'Tian';
or the silicon wafer substrate is in a P-type (111) crystal orientation, the first N+ region is in a cross shape, and the silicon wafer substrate is horizontally isolated into four spacing blocks which are arranged in a shape of a Chinese character 'Tian'.
In order to achieve the above purpose, another technical scheme adopted by the invention is as follows:
the four-diode integrated chip comprises a silicon wafer substrate, wherein a first P+ region or a first N+ region is formed in the silicon wafer substrate through first impurity doping, the first P+ region or the first N+ region penetrates through the silicon wafer substrate in the up-down direction to form a separation wall, and four horizontally spaced separation blocks are separated from the silicon wafer substrate;
the upper surface of each spacing block is doped with a second impurity to form an N+ region or a P+ region, and doped with a second first impurity to form a second P+ region or a second N+ region, wherein the N+ region is arranged at intervals with the first P+ region and the second P+ region, or the P+ region is arranged at intervals with the first N+ region and the second N+ region;
the edge area of the second P+ region or the second N+ region is provided with a groove;
the upper surface of the silicon wafer substrate is covered with a polysilicon passivation composite film layer on the peripheral area of the N+ region or the P+ region, the peripheral area of the second P+ region or the second N+ region and the surface of the groove; glass cement is filled in the grooves, and a glass passivation layer is formed through high-temperature sintering;
and metal layers are deposited on the surfaces of the N+ region or the P+ region and the second P+ region or the second N+ region to form a metal electrode.
The relevant content explanation in the technical scheme is as follows:
1. in the above scheme, the silicon wafer substrate has an N-type (111) crystal orientation, and the n+ region surrounds the second p+ region, or the n+ region is horizontally parallel to the second p+ region. The first P+ region is in a cross shape, and the silicon wafer substrate is isolated in the horizontal direction into four spacing blocks which are arranged in a shape of a Chinese character 'Tian'. The distance between the N+ region and the second P+ region is 200-300 um. And the edge area of the second P+ region is provided with the groove.
2. In the above scheme, the silicon wafer substrate has a P-type (111) crystal orientation, and the p+ region surrounds the second n+ region, or the p+ region is horizontally parallel to the second n+ region. The first N+ region is in a cross shape, and the silicon wafer substrate is isolated in the horizontal direction into four spacing blocks which are arranged in a shape like a Chinese character 'tian'. The distance between the P+ region and the second N+ region is 200-300 um. And the edge area of the second N+ region is provided with the groove.
3. In the scheme, the depth of the groove is 20-40 um.
4. In the scheme, the thickness of the glass cement is 25-35 mu m.
5. In the above scheme, the polysilicon passivation composite film layer is formed by adopting a CVD process deposition, and the process conditions are as follows: firstly, introducing silane gas and nitrous oxide gas at the temperature of 650+/-1 ℃ for 25+/-1 minutes, wherein the flow rate of the silane gas is 130+/-5 ml per minute, and the flow rate of the nitrous oxide gas is 30+/-2 ml per minute; then, continuing to introduce silane gas and nitrous oxide gas at 780+ -1deg.C for 15+ -0.5 min at the flow rates of SiH 4 25.+ -.5 ml and N per minute 2 80+ -5 ml of O per minute; finally forming a layer of polycrystalline silicon passivation composite film layer of the oxygen-containing polycrystalline silicon passivation film and the silicon dioxide film.
The working principle and the advantages of the invention are as follows:
the invention relates to a manufacturing process of four diode integrated chips; the method comprises the following steps: 1. forming a first silicon dioxide film layer on the upper surface and the lower surface of a silicon wafer substrate; 2. etching and removing isolation belt areas of the first silicon dioxide film layers on the upper surface and the lower surface; 3. carrying out first doping on the isolation belt region to form a first P+ region or a first N+ region, forming a partition wall in a penetrating manner in the up-down direction, and isolating four partition blocks in the silicon wafer substrate; 4. removing the first silicon dioxide film layer, cleaning and forming a second silicon dioxide film layer; 5. etching and removing the peripheral area on the second silicon dioxide film layer; 6. performing second doping on the peripheral region to form an N+ region or a P+ region; 7. removing the second silicon dioxide film layer, cleaning and forming a third silicon dioxide film layer; 8. etching and removing the four second interval regions on the third silicon dioxide film layer; 9. performing first doping on the second interval region to form a second P+ region or a second N+ region; 10. forming a groove in the edge area of the second P+ region or the second N+ region; 11. removing the third silicon dioxide film layer, cleaning and forming a polycrystalline silicon passivation composite film layer; 12. forming a glass passivation layer in the trench; 13. removing the polysilicon passivation composite film layer on the surfaces of the peripheral region and the second interval region to expose the N+ region or the P+ region and the second P+ region or the second N+ region; 14. and depositing a metal layer on the surface of the N+ region or the P+ region and the second P+ region or the second N+ region to form a metal electrode.
The advantages of the present invention over the prior art include:
1. the PN junction of the U shape is formed through selective diffusion, so that the effective area of the PN junction is increased, and the power consumption of the diode when the diode is applied in a circuit is remarkably reduced;
2. the method of combining chemical vapor deposition passivation and glass passivation is adopted, so that leakage current of the side wall is reduced, and the reliability of the device is improved;
3. the process flow is simple, the consumption of chemicals is low, the forward power consumption is low, and the effects of low manufacturing cost and high quality are realized;
4. the shallow trench with the thickness of 20-40 microns is adopted, and the PN junction passivation design of the diode with glass is adopted, so that four diodes are integrated in the same silicon wafer substrate, and the electrodes of the diodes are designed on the same side of a chip, thereby improving the integration level and greatly reducing the volume of the device.
In addition, on the one hand, the invention is different from the conventional plane process, the conventional plane process can only achieve 600V, if the conventional plane process needs to achieve more than 800 or 1000V, the conventional plane process needs to be realized through a plurality of pressure dividing rings, the chip area and the complex process are required to be larger, and the processing cost at least needs to be doubled to be completed; on the other hand, the method is also different from a conventional groove process of 100-140 mu m, the conventional groove process needs more than 3 times of chemicals to corrode deep grooves, the probability of impurity contamination is increased by adopting a large-area glass passivation method, leakage current is high, and meanwhile the deep grooves can also cause problems of silicon wafer warpage, increased process fragmentation rate and the like.
The products applicable to the invention comprise a common rectifying diode, a fast recovery diode, a TVS protection diode, a voltage stabilizing tube and the like.
Compared with the traditional diode chip structure, the invention can greatly simplify packaging, thereby reducing material cost and labor cost, being beneficial to reducing the processing cost of a large number of diode semiconductor devices, realizing that the processing cost can be reduced by 30% at most, and improving the production efficiency in unit time. The method can also reduce the use energy consumption of the client, is more beneficial to reducing the waste of resources (avoiding the consumption of materials such as resin, soldering tin, copper lead wires and the like), and contributes to environmental protection.
Drawings
FIG. 1 is a schematic diagram of a first step of an embodiment of the present invention;
FIG. 2 is a schematic top view of a second step of an embodiment of the present invention;
FIG. 3 is a schematic diagram of a second step of the embodiment of the present invention;
FIG. 4 is a schematic diagram of a third step of the embodiment of the present invention;
FIG. 5 is a schematic diagram of a fourth step of the embodiment of the present invention;
FIG. 6 is a schematic diagram of a fifth step of the embodiment of the present invention;
FIG. 7 is a schematic diagram of a sixth step according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of a seventh step according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of an eighth step of the embodiment of the present invention;
FIG. 10 is a schematic diagram of a ninth step according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of a tenth step according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of an eleventh step of the embodiment of the present invention;
FIG. 13 is a schematic diagram of a twelfth step of the embodiment of the present invention;
FIG. 14 is a schematic diagram of a thirteenth step of the embodiment of the invention;
FIG. 15 is a schematic diagram of a fourteenth step according to an embodiment of the present invention;
fig. 16 is a schematic structural view (in top view) of an embodiment of the present invention.
In the above figures: 1. a silicon wafer substrate; 2. a first silicon dioxide film layer; 3. a first spacing region; 4. a separator region; 5. a first P+ region; 6. a spacer block; 7. a second silicon dioxide film layer; 8. a second spacing region; 9. a peripheral region; an n+ region; 11. a third silicon dioxide film layer; 12. a second P+ region; 13. a groove; 14. a polycrystalline silicon passivation composite film layer; 15. a glass passivation layer; 16. a metal layer; d. distance.
Detailed Description
The invention is further described below with reference to the accompanying drawings and examples:
examples: referring to fig. 1-16, a manufacturing process of four diode integrated chips is shown; the silicon wafer substrate 1 with the crystal orientation of N type (111) or P type (111) is selected, the embodiment is described by taking the crystal orientation of N type (111) as an example, and then the following steps are performed:
as shown in fig. 1, a first silicon dioxide film layer 2 is formed on the upper surface and the lower surface of the silicon wafer substrate 1;
as shown in fig. 2 and 3, in the second step, the four first spaced areas 3 on the upper surface and the lower surface of the silicon wafer substrate are respectively masked by photoresist, and the photoresist is used as a mask layer to respectively etch and remove the exposed first silicon dioxide film layer 2 on the upper surface and the lower surface of the silicon wafer substrate 1 to remove the isolation belt areas 4 outside the four first spaced areas 3;
as shown in fig. 4, in the third step, a first impurity doping is performed on the upper surface and the lower surface of the silicon wafer substrate 1 to perform a first doping on the isolation belt region 4, where the first impurity doping is boron impurity doping (or gallium impurity doping) and the doping concentration is 1 to 9×10 19 atm/cm 3 Thereby forming a first P+ region 5 in the isolation belt region 4 on the upper surface and the lower surface of the silicon wafer substrate 1, wherein the first P+ region 5 on the upper surface is connected with the first P+ region 5 on the lower surface to form a first P+ region 5 which penetrates through the silicon wafer substrate 1 in the vertical direction to form an isolation wall, and four isolation blocks 6 which are horizontally arranged at intervals are isolated in the silicon wafer substrate 1 so as to prepare for forming four diodes later;
as shown in fig. 5, in a fourth step, the first silicon dioxide film layer 2 is removed, the upper surface and the lower surface of the silicon wafer substrate 1 are cleaned, and then a second silicon dioxide film layer 7 is formed respectively;
as shown in fig. 6, a fifth step of masking the upper surface of the silicon wafer substrate 1 with photoresist to form four second spaced areas 8 and the isolation belt area 4 on the second silicon dioxide film layer 7; the second interval regions 8 are in one-to-one correspondence with the first interval regions 3, the area of each second interval region 8 is smaller than that of each first interval region 3, and each second interval region 8 is positioned in the middle of each first interval region 3; etching and removing peripheral areas 9 which are outside the four second interval areas 8 and are positioned in the four first interval areas 3 on the exposed second silicon dioxide film layer 7 by taking the photoresist as a mask layer;
as shown in fig. 7, in a sixth step, four of the peripheral regions 9 are doped with a second impurity, which is phosphorus impurity (arsenic impurity) on the upper surface of the silicon wafer substrate 1, so that an n+ region 10 is formed in the peripheral region 9, and the doping concentration of the surface of the n+ region 10 is at least 10 21 atm/cm 3 The diffusion depth is 30-50 μm;
the process conditions for doping the phosphorus impurities are as follows: firstly, in a furnace tube at 1100+/-0.5 ℃ for 2+/-0.05 hours, the atmosphere is phosphorus oxychloride (POCl) 3 ) The method comprises the steps of carrying out a first treatment on the surface of the Soaking hydrofluoric acid (HF) for 30+ -5 min after discharging, then placing in 1250+ -0.5deg.C furnace tube for 4+ -0.05 hr under N atmosphere 2 Is performed under conditions such that the n+ region 10 is formed in the peripheral region 9 by phosphorus atom diffusion.
As shown in fig. 8, in a seventh step, the second silicon dioxide film layer 7 is removed, and the upper surface and the lower surface of the silicon wafer substrate 1 are cleaned, and then a third silicon dioxide film layer 11 is formed respectively;
as shown in fig. 9, in the eighth step, the peripheral region 9 and the isolation belt region 4 are masked by photoresist, and the photoresist is used as a mask layer to etch and remove the exposed four second spacing regions 8 on the third silicon dioxide film layer 11, and the second spacing regions 8 are spaced from the peripheral region 9;
as shown in fig. 10, a ninth step, a second boron impurity doping (which may also beFor gallium impurity doping), boron doping each of the second spacer regions 8 is performed on the upper surface of the silicon wafer substrate 1, thereby forming a second p+ region 12 in the second spacer region 8, the doping concentration of the surface of the second p+ region 12 being at least 10 21 atm/cm 3 The diffusion depth is 50-70 mu m;
the process conditions for the second boron impurity doping are as follows: firstly, coating a liquid boron source on the surface of the second interval region 8, and heating in a furnace tube at 1150+/-0.5 ℃ for 2+/-0.05 hours under the atmosphere of nitrogen (N) 2 ) The method comprises the steps of carrying out a first treatment on the surface of the Soaking hydrofluoric acid (HF) for 30+ -5 min after discharging, and then soaking in 1250+ -0.5deg.C furnace tube for 18+ -0.05 hr under nitrogen (N) 2 ) Is performed under conditions such that the second p+ region 12 is formed by boron atom diffusion in the second spacer region 8.
As shown in fig. 11, a tenth step of forming a trench 13 in an edge region of each second p+ region 12, thereby exposing a PN junction on the upper surface of the silicon wafer substrate 1 to form a diode device region, wherein the depth of the trench 13 is 20-40 um;
through the opening of the groove 13, on one hand, the damaged layer on the surface of the silicon wafer substrate 1 can be removed, the leakage current of the device is reduced, and on the other hand, the PN junction exposed on the surface of the silicon wafer is recessed downwards, and the leakage current on the surface of the device is reduced under the protection of the polycrystalline silicon passivation composite film layer 14 so as to improve the reliability.
As shown in fig. 12, an eleventh step of removing the third silicon dioxide film layer 11, cleaning the upper surface of the silicon wafer substrate 1 and the trench 13, and forming a polysilicon passivation composite film layer 14;
the polysilicon passivation composite film layer 14 is formed by adopting a CVD process (chemical vapor deposition process), and the process conditions are as follows: firstly, silane (SiH) is introduced at a temperature of 650+ -1deg.C 4 ) Gas and nitrous oxide (N) 2 O) gas for 25±1 minutes, wherein the Silane (SiH) 4 ) The flow rate of the gas was 130.+ -. 5ml per minute, the nitrous oxide (N) 2 The flow rate of the O) gas is 30+/-2 ml per minute; then, the Silane (SiH) was continuously introduced at 780.+ -. 1 ℃ 4 ) Gas and nitrous oxide (N) 2 O) gas for 15+ -0.5 min at flow rates of SiH 4 25.+ -.5 ml and N per minute 2 80+ -5 ml of O per minute; the polysilicon passivation composite film layer 14 of an oxygen-containing polysilicon passivation film and a silicon oxide film is finally formed. By the above process conditions, the physical parameters of film thickness, composition, unit cell size, refractive index and the like of the polysilicon passivation composite film layer 14 meeting the requirements are achieved.
As shown in fig. 13, a twelfth step, a glass passivation layer 15 is formed on the surface of the polysilicon passivation composite film layer 14 in the trench 13;
the process conditions for forming the glass passivation layer 15 in the trench 13 are: and filling glass cement with the thickness of 25-35 mu m in the groove 13, and then forming a compact glass passivation layer 15 through high-temperature sintering, wherein the temperature is 830+/-10 ℃ and the time is 30+/-5 minutes.
As shown in fig. 14, a thirteenth step, removing the polysilicon passivation composite film layer 14 on the surfaces of the peripheral region 9 and the second spacer region 8, and exposing the n+ region 10 and the second p+ region 12;
as shown in fig. 15 and 16, in the fourteenth step, a metal layer 16 is deposited on the surface of the n+ region 10 and the second p+ region 12, so as to form a metal electrode.
Wherein, the distance d between the second interval region 8 and the peripheral region 9 is 200-300 um. The distance parameter is selected because the distance between the second p+ region 12 and the n+ region 10 must be designed to ensure a certain range, when an electric field is applied, the space charge region of the PN junction of the diode expands outwards, the space charge region is not widened enough if the distance between the second p+ region 12 and the n+ region 10 is too close, the diode breaks down in advance, the designed voltage requirement is not met, and if the distance is too wide, the size is increased and the material is wasted.
Wherein the process conditions for forming the first silicon dioxide film layer 2, the second silicon dioxide film layer 7 and the third silicon dioxide film layer 11 are as follows: in the 1150+ -0.5 ℃ furnace tube, an oxygen atmosphere of 30+ -5 minutes is firstly passed, then a water vapor atmosphere of 480+ -10 minutes is passed, and finally an oxygen atmosphere of 30+ -5 minutes is passed.
In summary, the present disclosure may be implemented at the product level according to the following schemes, which are only for illustration, but not limited to the following schemes.
As shown in fig. 16, a four-diode integrated chip includes a silicon substrate 1, wherein the silicon substrate 1 is N-type < 111 > -crystal orientation; a first P+ region 5 is formed in the silicon wafer substrate 1 through first boron impurity doping, the first P+ region 5 penetrates through the silicon wafer substrate 1 in the up-down direction to form a separation wall, and four horizontally spaced separation blocks 6 are separated from the silicon wafer substrate 1; the first P+ region 5 is cross-shaped, and separates the silicon wafer substrate 1 into four spacing blocks 6 which are arranged in a shape of a Chinese character 'tian' in the horizontal direction.
The upper surface of each spacer 6 is doped with phosphorus impurities to form an n+ region 10, and doped with boron impurities for the second time to form a second p+ region 12, wherein the n+ region 10, the first p+ region 5 and the second p+ region 12 are arranged at intervals; the n+ region 10 surrounds the second p+ region 12, or the n+ region 10 is horizontally juxtaposed with the second p+ region 12. The distance d between the n+ region 10 and the second p+ region 12 is 200-300 um.
The doping concentration of the surface of the N+ region 10 is at least 10 21 atm/cm 3 The diffusion depth is 30-50 μm; the doping concentration of the surface of the second P+ region 12 is at least 10 21 atm/cm 3 The diffusion depth is 50-70 μm.
Wherein, the edge area of the second P+ region 12 is provided with a groove 13; the depth of the groove 13 is 20-40 um.
The upper surface of the silicon wafer substrate 1 is covered with a polysilicon passivation composite film layer 14 on the peripheral area of the N+ region 10, the peripheral area of the second P+ region 12 and the surface of the groove 13; the grooves 13 are also filled with glass cement, the thickness of the glass cement is 25-35 mu m, and the glass passivation layer 15 is formed through high-temperature sintering.
The surface of the n+ region 10 and the second p+ region 12 are both deposited with a metal layer 16, forming a metal electrode.
Wherein the polysilicon passivation composite film layer 14 is formed by CVD (chemical vapor depositionProcess) deposition and formation, wherein the process conditions are as follows: firstly, introducing silane gas and nitrous oxide gas at the temperature of 650+/-1 ℃ for 25+/-1 minutes, wherein the flow rate of the silane gas is 130+/-5 ml per minute, and the flow rate of the nitrous oxide gas is 30+/-2 ml per minute; then, continuing to introduce silane gas and nitrous oxide gas at 780+ -1deg.C for 15+ -0.5 min at the flow rates of SiH 4 25.+ -.5 ml and N per minute 2 80+ -5 ml of O per minute; the polysilicon passivation composite film layer 14 of an oxygen-containing polysilicon passivation film and a silicon oxide film is finally formed.
In the post-packaging process, the metal electrodes corresponding to the n+ region 10 and the second p+ region 12 on different diode particles (spacer 6) can be connected through pins, so that the product is a full-bridge rectifying product, or a half-bridge and two-diode product.
The above embodiments are provided to illustrate the technical concept and features of the present invention and are intended to enable those skilled in the art to understand the content of the present invention and implement the same, and are not intended to limit the scope of the present invention. All equivalent changes or modifications made in accordance with the spirit of the present invention should be construed to be included in the scope of the present invention.

Claims (10)

1. A manufacturing process of four diode integrated chips; the method is characterized in that: selecting a silicon wafer substrate, and then performing the following steps:
the method comprises the steps that a first silicon dioxide film layer is formed on the upper surface and the lower surface of a silicon wafer substrate;
the second step, mask the four first interval areas on the first silicon dioxide film layer on the upper surface and the lower surface of the silicon wafer substrate through photoresist respectively, and etch and remove the exposed first silicon dioxide film layer on the upper surface and the lower surface of the silicon wafer substrate respectively to remove the isolation zone areas outside the four first interval areas by taking the photoresist as the mask layer;
third, first impurity doping is carried out on the upper surface and the lower surface of the silicon wafer substrate for the first doping of the isolation zone region, so that a first P+ region or a first N+ region is formed in the isolation zone region on the upper surface and the lower surface of the silicon wafer substrate; the first P+ region on the upper surface is connected with the first P+ region on the lower surface to form a first P+ region which penetrates through the silicon wafer substrate in the up-down direction to form a partition wall, or the first N+ region on the upper surface is connected with the first N+ region on the lower surface to form a first N+ region which penetrates through the silicon wafer substrate in the up-down direction to form a partition wall; four spacing blocks which are horizontally arranged at intervals are isolated from the silicon wafer substrate through the isolation wall, so that early preparation is made for the subsequent formation of four diodes;
step four, removing the first silicon dioxide film layer, cleaning the upper surface and the lower surface of the silicon wafer substrate, and then forming a second silicon dioxide film layer respectively;
fifthly, masking four second interval areas and the isolation belt areas on the second silicon dioxide film layer on the upper surface of the silicon wafer substrate through photoresist; the second interval regions are in one-to-one correspondence with the first interval regions, and the area of each second interval region is smaller than that of each first interval region; etching and removing peripheral areas which are outside the four second interval areas and are positioned in the four first interval areas on the exposed second silicon dioxide film layer by taking the photoresist as a mask layer;
a sixth step of doping a second impurity, wherein the four peripheral regions are doped on the upper surface of the silicon wafer substrate, so that an N+ region or a P+ region is formed in the peripheral regions, and the doping concentration of the surface of the N+ region is at least 10 21 atm/cm 3 The diffusion depth is 30-50 mu m, and the doping concentration of the surface of the P+ region is at least 10 21 atm/cm 3 The diffusion depth is 50-70 mu m;
seventh, removing the second silicon dioxide film layer, cleaning the upper surface and the lower surface of the silicon wafer substrate, and then forming a third silicon dioxide film layer respectively;
eighth step, mask the peripheral area and the isolation zone area through photoresist, and etch and remove the exposed four second interval areas on the third silicon dioxide film layer by taking the photoresist as a mask layer, wherein the second interval areas are arranged at intervals with the peripheral area;
a ninth step of performing first impurity doping for the second time, and performing first doping on each second interval region on the upper surface of the silicon wafer substrate, so as to form a second P+ region or a second N+ region in the second interval region, wherein the doping concentration of the surface of the second P+ region is at least 10 21 atm/cm 3 The diffusion depth is 50-70 mu m, and the doping concentration of the surface of the second N+ region is at least 10 21 atm/cm 3 The diffusion depth is 30-50 μm;
tenth, forming grooves in the edge areas of the second P+ regions or the second N+ regions, wherein the depth of the grooves is 20-40 um;
eleventh step, the third silicon dioxide film layer is removed, the upper surface of the silicon wafer substrate and the groove are cleaned, and then a polysilicon passivation composite film layer is formed;
twelfth, forming a glass passivation layer on the surface of the polycrystalline silicon passivation composite film layer in the groove;
removing the polysilicon passivation composite film layer on the surfaces of the peripheral region and the second interval region, and exposing the N+ region or the P+ region and the second P+ region or the second N+ region;
and fourteenth step, depositing metal layers on the surfaces of the N+ region or the P+ region and the second P+ region or the second N+ region to form a metal electrode.
2. The process according to claim 1, characterized in that: the silicon wafer substrate is in an N < 111 > crystal orientation, the first impurity is doped with boron impurities or gallium impurities, and the second impurity is doped with phosphorus impurities or arsenic impurities;
the first impurities are doped in the isolation zone areas on the upper surface and the lower surface of the silicon wafer substrate for the first time to form first P+ areas; the second impurities are doped in four peripheral areas on the upper surface of the silicon wafer substrate to form an N+ area; the second first impurities are doped in each second interval region on the upper surface of the silicon wafer substrate to form a second P+ region;
the groove is formed in the edge area of the second P+ region.
3. The process according to claim 1, characterized in that: the silicon wafer substrate is in a P-type (111) crystal orientation, the first impurity is doped with phosphorus impurity or arsenic impurity, and the second impurity is doped with boron impurity or gallium impurity;
the first impurity is doped in the isolation zone areas on the upper surface and the lower surface of the silicon wafer substrate for the first time to form a first N+ area; the second impurities are doped in four peripheral areas on the upper surface of the silicon wafer substrate to form a P+ area; the second first impurities are doped in each second interval region on the upper surface of the silicon wafer substrate to form a second N+ region;
the groove is formed in the edge area of the second N+ region.
4. The process according to claim 1, characterized in that: the process conditions for forming the first silicon dioxide film layer, the second silicon dioxide film layer and the third silicon dioxide film layer are as follows: in the 1150+ -0.5 ℃ furnace tube, an oxygen atmosphere of 30+ -5 minutes is firstly passed, then a water vapor atmosphere of 480+ -10 minutes is passed, and finally an oxygen atmosphere of 30+ -5 minutes is passed.
5. The process according to claim 2, characterized in that: the process conditions for doping the phosphorus impurities are as follows: firstly, in a furnace tube at 1100+/-0.5 ℃ for 2+/-0.05 hours, wherein the atmosphere is phosphorus oxychloride; soaking hydrofluoric acid for 30+ -5 min after discharging, and then soaking in 1250+ -0.5deg.C furnace tube for 4+ -0.05 hr under N atmosphere 2 Is carried out under conditions such that the n+ region is formed by diffusion of phosphorus atoms.
6. The process according to claim 2, characterized in that: the process conditions for the second boron impurity doping are as follows: firstly, coating a liquid boron source on the surface of a second interval region, wherein the time is 2+/-0.05 hours in a furnace tube at 1150+/-0.5 ℃, and the atmosphere is nitrogen; after discharging, the second P+ region is formed by diffusion of boron atoms by immersing hydrofluoric acid for 30+ -5 minutes and then in a furnace tube at 1250+ -0.5 ℃ for 18+ -0.05 hours under the condition that the atmosphere is nitrogen.
7. The process according to claim 1, characterized in that: in the eleventh step, the polysilicon passivation composite film layer is formed by adopting a CVD process, and the process conditions are as follows: firstly, introducing silane gas and nitrous oxide gas at the temperature of 650+/-1 ℃ for 25+/-1 minutes, wherein the flow rate of the silane gas is 130+/-5 ml per minute, and the flow rate of the nitrous oxide gas is 30+/-2 ml per minute; then, continuing to introduce silane gas and nitrous oxide gas at 780+ -1deg.C for 15+ -0.5 min at the flow rates of SiH 4 25.+ -.5 ml and N per minute 2 80+ -5 ml of O per minute; finally forming a layer of polycrystalline silicon passivation composite film layer of the oxygen-containing polycrystalline silicon passivation film and the silicon dioxide film.
8. The process according to claim 1, characterized in that: in step twelve, the process conditions for forming the glass passivation layer in the trench are: and filling glass cement with the thickness of 25-35 mu m in the groove, and then forming a compact glass passivation layer through high-temperature sintering, wherein the temperature is 830+/-10 ℃ and the time is 30+/-5 minutes.
9. The utility model provides a four diode integrated chip which characterized in that: the chip is prepared and obtained by any one of the processes of claims 1-8, and comprises a silicon substrate, wherein a first P+ region or a first N+ region is formed in the silicon substrate through first impurity doping, and penetrates through the silicon substrate in the up-down direction to form a partition wall, and four partition blocks which are horizontally arranged at intervals are isolated in the silicon substrate;
the upper surface of each spacing block is doped with a second impurity to form an N+ region or a P+ region, and doped with a second first impurity to form a second P+ region or a second N+ region, wherein the N+ region is arranged at intervals with the first P+ region and the second P+ region, or the P+ region is arranged at intervals with the first N+ region and the second N+ region;
the edge area of the second P+ region or the second N+ region is provided with a groove;
the upper surface of the silicon wafer substrate is covered with a polysilicon passivation composite film layer on the peripheral area of the N+ region or the P+ region, the peripheral area of the second P+ region or the second N+ region and the surface of the groove; glass cement is filled in the grooves, and a glass passivation layer is formed through high-temperature sintering;
and metal layers are deposited on the surfaces of the N+ region or the P+ region and the second P+ region or the second N+ region to form a metal electrode.
10. The chip of claim 9, wherein: the first P+ region or the first N+ region is in a cross shape, and the silicon wafer substrate is horizontally isolated into four spacing blocks which are arranged in a shape of a Chinese character 'Tian'.
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