CN201466028U - Grid array diode - Google Patents
Grid array diode Download PDFInfo
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- CN201466028U CN201466028U CN2009200744675U CN200920074467U CN201466028U CN 201466028 U CN201466028 U CN 201466028U CN 2009200744675 U CN2009200744675 U CN 2009200744675U CN 200920074467 U CN200920074467 U CN 200920074467U CN 201466028 U CN201466028 U CN 201466028U
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Abstract
The utility model discloses a grid array diode comprising unit diodes formed by short-connecting bases and collectors of longitudinal NPN tubes. The unit diodes are square cells, are arranged in a gridded and staggering manner and are connected in parallel into a whole high-power diode; the negative electrode of the unit diode consists of an emitter of the NPN tube; the positive electrode of the unit diode consists of the base and the collector of the NPN tube; the negative electrode of the unit diode is positioned in a low-voltage N-trap area at the middle, the positive electrode thereof is wrapped at the periphery which belongs to a high-voltage P-trap area; adjacent diode units use the upper, the lower, the left and the right positive electrodes publically to form a gridded active area, and the center of each gird is the negative electrode of the unit diode; grid array PN-node diodes are symmetrically distributed by taking the negative electrode of the unit diode as a center; and the collectors of all the unit diodes are public and are wrapped at the epitaxial areas of the outer edge N of the grid array PN-node diode. The grid array diode realizes the functions of large-current passing, low power consumption, low-substrate leakage, high reverse voltage pressure and the like when the voltage is conducted forwardly and works.
Description
Technical field
The utility model relates to a kind of electronic component, particularly relates to a kind of diode.
Background technology
19 the end of the century people just invented the device that is called diode now, being widely used for the first time is crystal natural detector in 1907.Silicon PN junction diode comes into vogue in the sixties in 20th century, and diode is usually as clamper, rectification, detection etc. in the modern integrated circuits.
In the standard bipolar integrated circuit generally the diode of normal use have two kinds, the one, the base stage of bipolar transistor (BJT) and the diode of collector electrode short circuit, another kind are exactly the independent base knot and the diode of collector junction (BC knot).The diode that the metal-oxide-semiconductor field effect t compatible technology is realized down is more various than the diode complexity of pure bipolar technology (Bipolar), has bigger ghost effect, so when using as power diode, avoid latch-up (Latch-μ p), overcome ghost effect under the compatible technology so have only by rational layout.Commonly used the forming of general power tube design by the NPN type, the power diode structure adopts finger-like or interdigitated configuration, and its great advantage is to have other shape to be beyond one's reach at a high speed.And positive-negative-positive is subjected to process technology limit seldom can bear high-power as the NPN pipe, so use less, but the power tube array that it also can be formed adopts a large amount of unit cell arrangement square nets or hexagonal mesh structure, and its great advantage is because to bear power little in the unit, so it is more stable, see Fig. 1, regional 1 part is a PNP pipe emitter, and regional 2 parts are PNP pipe collectors, zone 3 parts are N type extensions, and regional 4 parts are PNP pipe base stages.
The utility model content
The technical problems to be solved in the utility model is, provides a kind of and realize power diode under bipolar transistor and metal-oxide-semiconductor field effect t compatible technology, and it is applied to power IC.When working, can realize forward conduction that big electric current passes through, low-power consumption, low-substrate leakage, high function such as oppositely withstand voltage.
For solving the problems of the technologies described above, the utility model provides a kind of grid array diode, comprising: vertically NPN pipe base stage and collector electrode are by the cell diodes of metal connecting line short circuit; Cell diodes is square cellular, is latticed and is staggered, as a whole heavy-duty diode in parallel; The negative pole of cell diodes is made up of NPN pipe emitter; The positive pole of cell diodes is made up of NPN pipe base stage and collector electrode; The negative pole of cell diodes around positive pole wraps in, belongs to the high pressure P well area at middle low pressure N well area; Adjacent diode is public anodal up and down, forms latticed active area, and each grid element center is the negative pole of cell diodes; Grid array PN junction diode is symmetrical distribution with the negative pole center of cell diodes; All unit pipes collector electrodes are public, are enclosed in the outside N epi region of grid array PN junction diode.
The beneficial effects of the utility model are: realize power diode under bipolar transistor and metal-oxide-semiconductor field effect t compatible technology, be applied to power IC.When working, can realize forward conduction that big electric current passes through, low-power consumption, low-substrate leakage, high function such as oppositely withstand voltage.
Description of drawings
Below in conjunction with drawings and Examples the utility model is described in further detail.
Fig. 1 is existing positive-negative-positive grid diode structure schematic diagram;
Fig. 2 is embodiment one a described negative pole rectangular cells grid array diode schematic diagram;
Fig. 3 is embodiment one a described negative pole rectangular cells grid array diode square cellular schematic diagram;
Fig. 4 is embodiment two described negative pole hexagonal cells grid array diode schematic diagrames;
Fig. 5 is embodiment three described negative pole circular cell grid array diode schematic diagrames.
Embodiment
Grid array PN junction diode structure described in the utility model mainly comprises:
Vertically NPN pipe base stage and collector electrode are by the cell diodes of metal connecting line short circuit;
Cell diodes is square cellular, is latticed and is staggered, as a whole heavy-duty diode in parallel;
The negative pole of cell diodes is made up of NPN pipe emitter;
The positive pole of cell diodes is made up of NPN pipe base stage and collector electrode;
The negative pole of cell diodes around positive pole wraps in, belongs to the high pressure P well area at middle low pressure N well area;
Adjacent diode is public anodal up and down, forms latticed active area, and each grid element center is the negative pole of cell diodes;
The negative pole shape of cell diodes can be square, hexagon or circle;
Grid array PN junction diode is symmetrical distribution with the negative pole center of cell diodes;
All unit pipes collector electrodes are public, are enclosed in the outside N epi region of grid array PN junction diode;
Embodiment one:
Negative pole rectangular cells grid array diode schematic construction is seen Fig. 2, and regional 1 part is to strengthen N type district, and its shape is square, its outsourcing zone 2 part low pressure N type well regions, and regional 1 part and 2 parts form the negative pole of cell diodes; Zone 3 parts are to strengthen p type island region, form the positive pole of cell diodes, and regional 4 parts are high-voltage P-type well regions, enclosing region 3 parts and regional 2 parts;
The diode square cellular internal diameter length of side 10～50 μ m, wide 2～10 μ m of anodal sideband, the negative pole square length of side 5～25 μ m, cellular diode effective current passage area A act is 0.4 to 0.6 with the ratio of cellular gross area Acell;
Embodiment two:
Negative pole hexagonal cells grid array diode schematic construction is seen Fig. 4, and regional 1 part is to strengthen N type district, and its shape is hexagon, its outsourcing zone 2 part low pressure N type well regions, and regional 1 part and 2 parts form the negative pole of cell diodes; Zone 3 parts are to strengthen p type island region, form the positive pole of cell diodes, and regional 4 parts are high-voltage P-type well regions, enclosing region 3 parts and regional 2 parts;
The diode square cellular internal diameter length of side 10～50 μ m, wide 2～10 μ m of anodal sideband, negative pole hexagonal side length 3～20 μ m, cellular diode effective current passage area A act is 0.4 to 0.6 with the ratio of cellular gross area Acell;
Embodiment three:
Negative pole circular cell grid array diode schematic construction is seen Fig. 5, and regional 1 part is to strengthen N type district, and its shape is rounded, its outsourcing zone 2 part low pressure N type well regions, and regional 1 part and 2 parts form the negative pole of cell diodes; Zone 3 parts are to strengthen p type island region, form the positive pole of cell diodes, and regional 4 parts are high-voltage P-type well regions, enclosing region 3 parts and regional 2 parts;
The diode square cellular internal diameter length of side 10～50 μ m, wide 2～10 μ m of anodal sideband, negative pole circular radius 3～20 μ m, cellular diode effective current passage area A act is 0.4 to 0.6 with the ratio of cellular gross area Acell.
BCD technology integrated circuit power diode case technical requirement: reverse breakdown voltage is greater than 30 volts, and forward current 60 MAH power consumptions are less than 60 milliwatts, and substrate leakage current is less than 80 microamperes.
The utility model grid array diode, from reliability first, the base stage of bipolar transistor (BJT) and the diode form of collector electrode short circuit have been used for reference, utilize vertical bipolar NPN transistor (VNPN) structure under the BCD technology, high-voltage P-type semiconductor well (high pressure P trap) is as the base region of VNPN, low pressure N type semiconductor trap (low pressure N trap) is included in the high pressure P trap well area emitter region as VNPN, the N extension is passed through the metal connecting line short circuit to the common collector active region of the base stage active region of high pressure P trap trap VNPN and outermost N extension VNPN as the collector region of VNPN.The base of each unit VNPN pipe is at the high pressure P well area, the emitter region is at low pressure N well area, active emitter region can be rendered as square, hexagon or circle, active base is enclosed in around the active emitter region, the public base stage up and down in adjacent unit, the base stage of numerous VNPN pipes and emitter unit are formed the diode cellular and are presented the uniform grid arrangement, and the base stage of wherein forming the square net band shape is the positive pole of diode, and each grid element center is the negative pole of cell diodes.
Analyze by the power diode technical indicator, utilize high withstand voltage greater than 30 volts of solid existing a kind of between low pressure N well area and the high pressure P well area, when effective emitter area of employing base stage and collector electrode short unit VNPN pipe is 64 square microns, negative pole as the diode cellular, all around around width be 2 to 10 microns base band as the positive pole of diode cellular, the power diode that adopts the grid array of square diode cellular 15*15 micron (internal diameter) to compose in parallel can be taken into account the requirement of oppositely withstand voltage and forward substrate leakage current and power consumption.
When adopting square shaped cells to make diode cathode, the grid array diode is seen Fig. 2, and regional 1 part is to strengthen N type district, and its shape is square, its outsourcing zone 2 part low pressure N type well regions, and regional 1 part and 2 parts form the negative electrode of cell diodes; Zone 3 parts are to strengthen p type island region, are the positive pole that the sideband shape forms cell diodes, and regional 4 parts are high-voltage P-type well regions, enclosing region 3 parts and regional 2 parts.
Reach ratio 0.4 to 0.6 according to the gross area when cellular diode effective current passage area and cellular diode, conduction impedance minimum then, unit are current density maximum, most effective.See Fig. 3, zone 1 part is the negative pole of cell diodes, zone 3 parts are positive poles of cell diodes, example square diode cellular internal diameter a=15 micron, cellular gross area Acell=15*15=225 square micron then, and the cellular effective current passage is the negative pole N type district from anodal p type island region all around to the center, side length b=8 of center square negative pole micron, the cellular diode from around positive pole to distance c=3.5 of the negative pole at center micron, anodal bandwidth d=4 micron around the cellular diode, so effective current passage area A act=4*b*c=112 square micron, cellular diode effective current passage area A act is 0.5 with the ratio of cellular gross area Acell.
Hexagonal cells negative pole grid array diode is seen Fig. 4, and regional 1 part is to strengthen N type district, and its shape is hexagon, its outsourcing zone 2 part low pressure N type well regions, and regional 1 part and 2 parts form the negative electrode of cell diodes; Zone 3 parts are to strengthen p type island region, are the positive pole that the sideband shape forms cell diodes, and regional 4 parts are high-voltage P-type well regions, enclosing region 3 parts and regional 2 parts.
Example square diode cellular internal diameter a=15 micron, cellular gross area Acell=15*15=225 square micron then, and the cellular effective current passage is the negative pole N type district from anodal p type island region all around to the center, side length b=5 of center hexagon negative pole micron, minimum 1.5 microns of the distance c of cellular diode from positive pole all around to central negative polar circle limit, maximum 5.6 microns, anodal bandwidth d=4 micron around the cellular diode, so effective current passage area A act=6*b*c=107 square micron, cellular diode effective current passage area A act is 0.47 with the ratio of cellular gross area Acell.
Circular cell negative pole grid array diode is seen Fig. 5, and regional 1 part is to strengthen N type district, and its shape is rounded, its outsourcing zone 2 part low pressure N type well regions, and regional 1 part and 2 parts form the negative electrode of cell diodes; Zone 3 parts are to strengthen p type island region, are the positive pole that the sideband shape forms cell diodes, and regional 4 parts are high-voltage P-type well regions, enclosing region 3 parts and regional 2 parts.
Example square diode cellular internal diameter a=15 micron, cellular gross area Acell=15*15=225 square micron then, and the cellular effective current passage is the negative pole N type district from anodal p type island region all around to the center, the radius b=5 micron of central circular negative pole, minimum 2.5 microns of the distance c of cellular diode from positive pole all around to central negative polar circle limit, maximum 5.6 microns, anodal bandwidth d=4 micron around the cellular diode, so effective current passage area A act=2 π * b*c=127 square micron, cellular diode effective current passage area A act is 0.56 with the ratio of cellular gross area Acell.
The utility model is not limited to execution mode discussed above.More than the description of embodiment is intended in order to describe and illustrate the technical scheme that the utility model relates to.Based on the conspicuous conversion of the utility model enlightenment or substitute and also should be considered to fall into protection range of the present utility model.Above embodiment is used for disclosing best implementation method of the present utility model, so that those of ordinary skill in the art can use numerous embodiments of the present utility model and multiple alternative reaches the purpose of this utility model.
Claims (7)
1. a grid array diode is characterized in that, comprising:
Vertically NPN pipe base stage and collector electrode are by the cell diodes of metal connecting line short circuit;
Cell diodes is square cellular, is latticed and is staggered, as a whole heavy-duty diode in parallel;
The negative pole of cell diodes is made up of NPN pipe emitter;
The positive pole of cell diodes is made up of NPN pipe base stage and collector electrode;
The negative pole of cell diodes around positive pole wraps in, belongs to the high pressure P well area at middle low pressure N well area;
Adjacent diode is public anodal up and down, forms latticed active area, and each grid element center is the negative pole of cell diodes;
Grid array PN junction diode is symmetrical distribution with the negative pole center of cell diodes;
All unit pipes collector electrodes are public, are enclosed in the outside N epi region of grid array PN junction diode.
2. grid array diode as claimed in claim 1 is characterized in that, negative pole rectangular cells grid array comprises strengthens N type district, and its shape is square, and its outsourcing low pressure N type well region is strengthened the negative pole that N type district's part and low pressure N type well region form cell diodes; Also comprise the reinforcement p type island region, form the positive pole of cell diodes, the high-voltage P-type well region surrounds and strengthens p type island region and low pressure N type well region part.
3. grid array diode as claimed in claim 2, it is characterized in that the diode square cellular internal diameter length of side 10～50 μ m, wide 2～10 μ m of anodal sideband, the negative pole square length of side 5～25 μ m, cellular diode effective current passage area is 0.4 to 0.6 with the ratio of the cellular gross area.
4. grid array diode as claimed in claim 1 is characterized in that, negative pole hexagonal cells grid array comprises strengthens N type district, and its shape is hexagon, and its outsourcing low pressure N type well region is strengthened the negative pole that N type district and low pressure N type well region form cell diodes; Also comprise the reinforcement p type island region, form the positive pole of cell diodes, the high-voltage P-type well region surrounds strengthens p type island region and low pressure N type well region.
5. grid array diode as claimed in claim 4, it is characterized in that the diode square cellular internal diameter length of side 10～50 μ m, wide 2～10 μ m of anodal sideband, negative pole hexagonal side length 3～20 μ m, cellular diode effective current passage area is 0.4 to 0.6 with the ratio of the cellular gross area.
6. grid array diode as claimed in claim 1, it is characterized in that negative pole circular cell grid array comprises that regional 1 part is to strengthen N type district, its shape is rounded, its outsourcing low pressure N type well region is strengthened the negative pole that N type district and low pressure N type well region form cell diodes; Also comprise the reinforcement p type island region, form the positive pole of cell diodes, the high-voltage P-type well region surrounds strengthens p type island region and low pressure N type well region.
7. grid array diode as claimed in claim 6, it is characterized in that the diode square cellular internal diameter length of side 10～50 μ m, wide 2～10 μ m of anodal sideband, negative pole circular radius 3～20 μ m, cellular diode effective current passage area is 0.4 to 0.6 with the ratio of the cellular gross area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200744675U CN201466028U (en) | 2009-09-04 | 2009-09-04 | Grid array diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200744675U CN201466028U (en) | 2009-09-04 | 2009-09-04 | Grid array diode |
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| Publication Number | Publication Date |
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| CN201466028U true CN201466028U (en) | 2010-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2009200744675U Expired - Fee Related CN201466028U (en) | 2009-09-04 | 2009-09-04 | Grid array diode |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901804A (en) * | 2010-05-10 | 2010-12-01 | 深圳深爱半导体有限公司 | Layout structure of VDMOS (Vertical Double-diffused Metal Oxidation Semiconductor) devices and production method thereof |
| WO2020220665A1 (en) * | 2019-04-30 | 2020-11-05 | 苏州固锝电子股份有限公司 | Manufacturing process for four-diode integrated chip |
| CN113594239A (en) * | 2021-07-20 | 2021-11-02 | 弘大芯源(深圳)半导体有限公司 | Bipolar power transistor with grid structure |
-
2009
- 2009-09-04 CN CN2009200744675U patent/CN201466028U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101901804A (en) * | 2010-05-10 | 2010-12-01 | 深圳深爱半导体有限公司 | Layout structure of VDMOS (Vertical Double-diffused Metal Oxidation Semiconductor) devices and production method thereof |
| WO2020220665A1 (en) * | 2019-04-30 | 2020-11-05 | 苏州固锝电子股份有限公司 | Manufacturing process for four-diode integrated chip |
| CN113594239A (en) * | 2021-07-20 | 2021-11-02 | 弘大芯源(深圳)半导体有限公司 | Bipolar power transistor with grid structure |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131227 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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| TR01 | Transfer of patent right |
Effective date of registration: 20131227 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100512 Termination date: 20150904 |
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| EXPY | Termination of patent right or utility model |