CN110048675A - A kind of circuit improving ambipolar track to track amplifier input bias current performance - Google Patents
A kind of circuit improving ambipolar track to track amplifier input bias current performance Download PDFInfo
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- CN110048675A CN110048675A CN201910370715.9A CN201910370715A CN110048675A CN 110048675 A CN110048675 A CN 110048675A CN 201910370715 A CN201910370715 A CN 201910370715A CN 110048675 A CN110048675 A CN 110048675A
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- transistor
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- resistance
- bias current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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Abstract
The invention discloses a kind of circuits for improving ambipolar track to track amplifier input bias current performance, two distinct types of resistance is added in the emitter of transistor QB3 and transistor QB4, the current source as caused by PNP transistor limited power voltage in distress under high power supply voltage can be reduced can not be by the defect of accurate mirror, so that it is guaranteed that the current source for flowing into input NPN pipe and PNP pipe is in the same size.The variation of common-mode voltage is hardly followed to the input bias current of transistor Q1 and transistor Q2 and is changed the invention can ensure that inputting PNP under different electrical power voltage, i.e. under different electrical power, input bias current is expressible more flat with the change curve of common-mode voltage；The present invention base resistance RB1 and polysilicon resistance RB2 opposite using temperature drift coefficient, can formation temperature compensation, input PNP is set to vary with temperature range to the base current of pipe bigger, it is suitable that range is varied with temperature with the base current of NPN pipe, after the two is added, the temperature drift characteristic of input bias current is optimized over the entire temperature range.
Description
[technical field]
The invention belongs to IC design technical fields, are related to a kind of ambipolar track to track amplifier input biased electrical of raising
The circuit of fluidity energy.
[background technique]
Input bias current is one of the important indicator for measuring amplifier input port characteristic, excessive input bias current meeting
Cause the decline of amplifier precision, noise etc. performance.Its input bias current index order of magnitude phase of different input level structures
Difference is huge, has minimum input bias current by the amplifier of input port of FET, but cannot achieve high-gain and high voltage,
Very high voltage gain can be realized by the amplifier of input terminal of bipolar junction transistor, be resistant to very high supply voltage, but it is inputted
Bias current is larger, it is necessary to strategy be taken to be controlled it.
In general, the circuit of the track to track operational amplification input stage collectively constituted with NPN type and PNP transistor is as shown in Figure 1.
The circuit is made of bipolar junction transistor Q1-Q4 and QB1-QB4, resistance R1-R4.Wherein, the base stage of transistor Q1, transistor Q3
Be connected with reversed input signal VINN, transistor Q2, transistor Q4 base stage be connected with forward direction input signal VINP.Transistor
Q3, transistor Q4 emitter be connected with the collector of transistor QB1, collector respectively with one end of resistance R3 and resistance R4 connect
It connects, the other end of resistance R3 and resistance R4 are connected with positive voltage AVDD.The emitter and crystal of transistor Q1, transistor Q2
The collector of pipe QB4 is connected, and collector is connect with one end of resistance R1 and resistance R2 respectively, the other end of resistance R1 and resistance R2
It is connected with ground AGND.Vbias provides bias voltage for the base stage of transistor QB1 and transistor QB2, and emitter connects with AGND
It connects.Transistor QB2 collector is connected with the base stage of transistor QB3 and collector, and is connected with the base stage of transistor QB4, crystal
The emitter of pipe QB3 and transistor QB4 are commonly connected to supply voltage AVDD.
Although track to track operation amplifier circuit input stage NPN as shown in Figure 1 and PNP transistor can produce direction
The bias current cancelled out each other on the contrary, but this kind of structure has the following disadvantages:
1. the amplification factor of electric current and input N pipe that the bias current of input NPN pipe is provided by transistor QB1 determines, defeated
The bias current for entering PNP pipe is determined by the electric current of transistor QB4 and the amplification factor of input P pipe.Firstly, current domestic bipolar
Under technology condition, the device property (such as amplification factor) of NPN and PNP transistor can not be exactly matched, PNP transistor
Characteristic is poor, even if current source provides identical electric current, it is inclined also can not to generate contrary input equal in magnitude in input terminal
Electric current is set, therefore total bias current can not cancel out each other.
2. the bias current of input NPN pipe is provided by transistor QB1, the bias current for inputting PNP pipe is passed by transistor QB2
Mirror image is provided to transistor QB4 after passing transistor QB3, since the device property of NPN and PNP transistor can not be complete
Match, pass to input pipe current source not can guarantee it is identical, or even difference it is larger, cause N pipe and P pipe bias current difference compared with
Greatly.
3. due to the limitation of PNP pipe strategic point power voltage, lead at higher voltages that transistor QB4 can not accurate mirror crystal
The electric current of pipe QB3 is supplied to the current source of PNP pipe and is supplied to the generation deviation of NPN pipe, leads to the bias current of N pipe and P pipe
Differ larger.
4. NPN and the amplification factor of PNP pipe have opposite temperature drift coefficient in domestic bipolar process, cause in entire temperature
In range, the difference of the bias current of NPN pipe and PNP pipe is increasing, and the temperature characterisitic of the total bias current of circuit is very poor.
5. bias current can occur significantly to change with the variation of input voltage since technological level limits, stability compared with
Difference.
From the above analysis as it can be seen that needing a kind of method for improving track to track circuit input bias current characteristic, it is possible, firstly, to
Make up the gap in PNP pipe and NPN tube device characteristic caused by limiting due to process conditions, guarantee to be supplied to as far as possible NPN pipe and
The current source of PNP pipe is in the same size；Furthermore, it is necessary to which a kind of temperature compensation structure, makes up due to NPN pipe and PNP pipe temperature drift coefficient
The poor phenomenon of bias current temperature drift characteristic both in the full temperature working range instead resulted in；Finally, avoiding input bias current
With the variation of common mode input generate it is apparent change, guarantee it entire relatively flat to having in rail input voltage range
Curve characteristic.
[summary of the invention]
It is an object of the invention to solve the input bias current of track to track amplifier caused by limiting due to current bipolar process level
Phenomenon larger, temperature drift characteristic is poor and stability is poor improves track to track amplifier port identity, guarantees the precision of amplifier, mention
For a kind of circuit for improving ambipolar track to track amplifier input bias current performance,
In order to achieve the above objectives, the present invention is achieved by the following scheme:
A kind of circuit improving ambipolar track to track amplifier input bias current performance, including base stage and reversed input signal
The transistor Q2 and transistor Q4 that VINN connected transistor Q1 and transistor Q3, base stage is connected with forward direction input signal VINP,
And transistor QB1 and transistor QB2 that base stage is connected with bias voltage Vbias；
The collector of the emitter of transistor Q3 and transistor Q4 and transistor QB1 with the collector phase of transistor QB1
Even；The collector of transistor Q3 and transistor Q4 are connected with supply voltage AVDD；The emitter of transistor QB1 and transistor QB2
Ground connection；
The emitter of transistor Q1 and transistor Q2 are connected with the collector of transistor QB4, transistor QB2 collector with
The base stage of transistor QB3 is connected with collector, and is connected with the base stage of transistor QB4；
The grounded collector of transistor Q1 and transistor Q2；
The emitter of transistor QB3 and transistor QB4 are commonly connected to supply voltage AVDD with resistance RB1 and resistance RB2.
A further improvement of the present invention lies in that:
The collector of transistor Q1 is grounded by resistance R1, and the collector of transistor Q2 is grounded by resistance R2.
The collector of transistor Q3 is connected by resistance R3 with supply voltage AVDD, and the collector of transistor Q4 passes through resistance
R4 is connected with supply voltage AVDD.
Resistance RB1 is base resistance, and resistance RB2 is polysilicon resistance.
Compared with prior art, the invention has the following advantages:
Two distinct types of resistance is added in the emitter of transistor QB3 and transistor QB4 in the present invention, can reduce in height
Under supply voltage the current source as caused by PNP transistor limited power voltage in distress can not by the defect of accurate mirror, thus
The current source for ensuring to flow into input NPN pipe and PNP pipe is in the same size.Secondly, the invention can ensure that defeated under different electrical power voltage
Enter PNP to hardly follow the variation of common-mode voltage to the input bias current of transistor Q1 and transistor Q2 and change, i.e., in difference
Under power supply, input bias current is expressible more flat with the change curve of common-mode voltage；Finally, the present invention uses temperature drift system
The opposite base resistance RB1 and polysilicon resistance RB2 of number, can formation temperature compensation, make to input PNP to the base current of pipe with temperature
It is bigger to spend variation range, it is suitable to vary with temperature range with the base current of NPN pipe, after the two is added, in entire temperature range
The temperature drift characteristic of interior input bias current is optimized.According to chip measured result it is found that the collocation structure proposes temperature drift characteristic
It is about 3 times high.
[Detailed description of the invention]
Fig. 1 is existing general track to track operational amplification input stage circuit diagram；
Fig. 2 is electrical block diagram of the present invention；
Fig. 3 is the present invention and the external input bias current with model circuit with common-mode voltage variation curve graph；Wherein,
It (a) is circuit characteristic of the present invention；It (b) is foreign countries with model circuit characteristic；
Fig. 4 is that circuit structure of the invention changes front and back input bias current temperature characteristics figure；Wherein, (a) is electricity
Before line structure changes；(b) after changing for circuit structure.
[specific embodiment]
In order to enable those skilled in the art to better understand the solution of the present invention, below in conjunction in the embodiment of the present invention
Attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is only
The embodiment of a part of the invention, the embodiment being not all of, and it is not intended to limit range disclosed by the invention.In addition, with
In lower explanation, descriptions of well-known structures and technologies are omitted, obscures concept disclosed by the invention to avoid unnecessary.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment should fall within the scope of the present invention.
The various structural schematic diagrams for disclosing embodiment according to the present invention are shown in the attached drawings.These figures are not in proportion
It draws, wherein some details are magnified for the purpose of clear expression, and some details may be omitted.As shown in the figure
The shape in various regions, layer and relative size, the positional relationship between them out is merely exemplary, in practice may be due to
Manufacturing tolerance or technical restriction and be deviated, and those skilled in the art may be additionally designed as required have not
Similar shape, size, the regions/layers of relative position.
In context disclosed by the invention, when one layer/element is referred to as located at another layer/element "upper", the layer/element
Can may exist intermediate layer/element on another layer/element or between them.In addition, if in a kind of court
One layer/element is located at another layer/element "upper" in, then when turn towards when, the layer/element can be located at another layer/
Element "lower".
It should be noted that description and claims of this specification and term " first " in above-mentioned attached drawing, "
Two " etc. be to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that using in this way
Data be interchangeable under appropriate circumstances, so as to the embodiment of the present invention described herein can in addition to illustrating herein or
Sequence other than those of description is implemented.In addition, term " includes " and " having " and their any deformation, it is intended that cover
Cover it is non-exclusive include, for example, the process, method, system, product or equipment for containing a series of steps or units are not necessarily limited to
Step or unit those of is clearly listed, but may include be not clearly listed or for these process, methods, product
Or other step or units that equipment is intrinsic.
The invention will be described in further detail with reference to the accompanying drawing:
Referring to fig. 2, the present invention improves the circuit of ambipolar track to track amplifier input bias current performance, in operational amplification input stage
The opposite two kinds of resistance of temperature drift coefficient is added in PNP transistor image source part, reduces the influence of power voltage in distress, guarantees
Mirror image precision reduces the absolute value of input bias current, improves input bias current to the flatness of common-mode voltage, improves defeated
Enter the temperature drift characteristic of bias current.Particular circuit configurations are as follows:
Transistor Q1, transistor Q3 base stage be connected with reversed input signal VINN, the base stage of transistor Q2, transistor Q4
It is connected with positive input signal VINP.Transistor Q3, transistor Q4 emitter be connected with the collector of transistor QB1, current collection
Pole is connect with one end of resistance R3 and resistance R4 respectively, and the other end of resistance R3 and resistance R4 are connected with positive voltage AVDD.
Transistor Q1, transistor Q2 emitter be connected with the collector of transistor QB4, collector is respectively with resistance R1's and resistance R2
The other end of one end connection, resistance R1 and resistance R2 are connected with ground AGND.Vbias is the base stage of transistor QB1 and transistor QB2
Bias voltage is provided, emitter is connect with AGND.The base stage and collector phase of transistor QB2 collector and transistor QB3
Even, and it is connected with the base stage of transistor QB4, the emitter of transistor QB3 and transistor QB4 are common with resistance RB1 and resistance RB2
It is connected to supply voltage AVDD.
The course of work of circuit shown in Fig. 2 is analyzed below, to illustrate its function and effect.
When supply voltage be ± 15V, when reference circuit provides the bias current of 50uA for amplifier, NPN transistor Q3 with
Q4 divides the electric current from transistor QB1 equally, will respectively flow through the electric current of 25uA.50uA electric current is passed to transistor by transistor QB2
Mirror image is to transistor QB4 again after QB3, and PNP transistor Q1 and Q2 divides the about 25uA of the electric current from transistor QB4, base equally at this time
Originally it ensure that arrival input is equal in magnitude to the current source of pipe.Due to the addition of polysilicon resistance RB2 and base resistance RB1, when
When common mode input is changed to+15V from -15V, input bias current has very flat performance, as shown in Fig. 3 (a), figure
3 (b) be the bias current of existing model circuit of the same race under the same terms with common-mode voltage variation figure, and comparison discovery passes through circuit
The change of structure and the ingenious utilization of type of device, curve become more flat.In addition, Fig. 4 (a) and (b) are respectively the present invention
With the temperature drift characteristic figure of front and back input bias current, before not changing, the temperature drift coefficient of input bias current is about 2.86nA/
DEG C, the temperature drift coefficient of input bias current is about 0.94nA/ DEG C after change, and temperature drift coefficient reduces about 3 times.Chip measured result
It has been shown that, the temperature drift characteristic of input bias current can be improved 3 times really.
From the above analysis as it can be seen that a kind of track to track amplifier that can be improved towards bipolar circuitry of the invention inputs biased electrical
The circuit of properties of flow has very strong versatility and flexibility for operational amplification input stage mirror current source, in addition, electricity of the invention
Line structure is easily achieved in terms of domain, has very high application value.
The present invention is suitable for most of operation amplifier circuits using bipolar junction transistor as input to pipe, flexibility with
Versatility is very strong.Above-mentioned institute's content of the discussions only shows one of concrete mode of the invention, is not intended to limit of the invention
Range.
The above content is merely illustrative of the invention's technical idea, and this does not limit the scope of protection of the present invention, all to press
According to technical idea proposed by the present invention, any changes made on the basis of the technical scheme each falls within claims of the present invention
Protection scope within.
Claims (4)
1. a kind of circuit for improving ambipolar track to track amplifier input bias current performance, which is characterized in that including base stage and instead
To the input signal VINN transistor Q1 being connected and transistor Q3, base stage and the forward direction input signal VINP transistor Q2 being connected and
The transistor QB1 and transistor QB2 that transistor Q4 and base stage are connected with bias voltage Vbias；
The emitter of transistor Q3 and transistor Q4 are connected with the collector of transistor QB1 with the collector of transistor QB1；It is brilliant
The collector of body pipe Q3 and transistor Q4 are connected with supply voltage AVDD；The emitter of transistor QB1 and transistor QB2 ground connection；
The emitter of transistor Q1 and transistor Q2 are connected with the collector of transistor QB4, transistor QB2 collector and crystal
The base stage of pipe QB3 is connected with collector, and is connected with the base stage of transistor QB4；
The grounded collector of transistor Q1 and transistor Q2；
The emitter of transistor QB3 and transistor QB4 are commonly connected to supply voltage AVDD with resistance RB1 and resistance RB2.
2. the circuit according to claim 1 for improving ambipolar track to track amplifier input bias current performance, feature exist
In the collector of transistor Q1 is grounded by resistance R1, and the collector of transistor Q2 is grounded by resistance R2.
3. the circuit according to claim 1 for improving ambipolar track to track amplifier input bias current performance, feature exist
Be connected by resistance R3 with supply voltage AVDD in the collector of, transistor Q3, the collector of transistor Q4 pass through resistance R4 and
Supply voltage AVDD is connected.
4. the circuit according to claim 1 for improving ambipolar track to track amplifier input bias current performance, feature exist
In resistance RB1 is base resistance, and resistance RB2 is polysilicon resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910370715.9A CN110048675B (en) | 2019-05-06 | 2019-05-06 | Circuit for improving input bias current performance of bipolar rail-to-rail operational amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910370715.9A CN110048675B (en) | 2019-05-06 | 2019-05-06 | Circuit for improving input bias current performance of bipolar rail-to-rail operational amplifier |
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| CN110048675A true CN110048675A (en) | 2019-07-23 |
| CN110048675B CN110048675B (en) | 2023-03-21 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113014208A (en) * | 2021-03-12 | 2021-06-22 | 西安微电子技术研究所 | Input port phase inversion protection circuit |
| CN114513177A (en) * | 2021-12-31 | 2022-05-17 | 贵州振华风光半导体股份有限公司 | Ultra-low bias current design method based on bipolar amplifier and circuit thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113014208A (en) * | 2021-03-12 | 2021-06-22 | 西安微电子技术研究所 | Input port phase inversion protection circuit |
| CN113014208B (en) * | 2021-03-12 | 2023-07-04 | 西安微电子技术研究所 | Input port phase inversion protection circuit |
| CN114513177A (en) * | 2021-12-31 | 2022-05-17 | 贵州振华风光半导体股份有限公司 | Ultra-low bias current design method based on bipolar amplifier and circuit thereof |
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| Publication number | Publication date |
|---|---|
| CN110048675B (en) | 2023-03-21 |
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