CN107612512A - High accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise trim circuit and method for repairing and regulating - Google Patents
High accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise trim circuit and method for repairing and regulating Download PDFInfo
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Abstract
A kind of high accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise trim circuit and method for repairing and regulating, are formed by starting with two amplifiers of biasing circuit and structure identical；Two amplifiers include input stage circuit, intergrade circuit and output-stage circuit；Input stage circuit improves input impedance, reduction offset voltage and temperature drift using differential pair tube structure, establishes good matching dc point, completes buffering and the chopped-off head amplification of input voltage；Intergrade circuit launches level structure using collapsible grounded base and improves voltage gain and output voltage swing altogether；Output-stage circuit uses parameter identical triode to be exported in the form of recommending come expanding internal electric current, raising rear class driving force, increase output voltage swing；Input stage circuit, which is provided with, trims network, trimming network includes multiple trimming pressure welding point, different pressure welding points is trimmed according to the difference of measured value, the present invention is trimmed instead of metal thin film resistor laser trimming using polysilicon, and save high-precision circuit trims cost.
Description
Technical field
The invention belongs to integrated circuit fields, it is related to the processing and manufacturing circuit and method of high performance operational amplifier, specifically
It is related to a kind of high accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise trims circuit and method for repairing and regulating.
Background technology
Operational amplifier is seen everywhere in circuit system of today, and designer always wishes to design in all fields
Operational amplifier with quite outstanding performance, such as with high-gain, big output voltage swing, high current drive capability, small power consumption
Deng " all-round " operational amplifier, but the operational amplifier in such ideal is difficult to realize in fact.Each index of operational amplifier
Interdependence and conflicting relation be present, such as make operational amplifier that there is less noise voltage, may will sacrifice and make an uproar
Acoustoelectric current or power consumption, therefore required according to each different application, the operational amplifier nowadays designed all has special specificity
Energy.
Fig. 1 is external a high accuracy, low noise operational amplifier, and it starts and bias current generating circuit is as schemed
Show, after electricity on circuit, current path is formed by each branch road, the certain electric current of each device transmission is started normal work.
After circuit start, by Zener diode Q47, triode Q48 and Q52, resistance R251 and R252 produce both with electricity
Source voltage is unrelated and has the bias current of smaller positive temperature coefficient, and the electric current is mirrored structure by Q43, Q46 and Q53 and provided
Used to two-way amplifying circuit.Input stage using differential pair tube structure improve input impedance, reduce offset voltage and temperature drift,
Good matching dc point is established, completes buffering and the chopped-off head amplification of input voltage.In addition, mended using input bias current
Compensation structure, construct one compensation electric current equal in magnitude, in opposite direction with input base current and offset, it is inclined to reduce input
Put electric current and improve input impedance, reduce influence of the noise to circuit, reduce the power that operational amplifier absorbs from signal source.
Interstage amplifier section uses collapsible, grounded base, launches level structure altogether to improve the gain of amplifier and output voltage swing,
Meet the requirement of circuit entire gain, this grade is provided with internal compensation resistance capacitance to ensure the frequency stability of circuit work.
Output stage uses parameter identical triode to be exported in the form of recommending, and with expanding internal electric current, improves rear class and drives
Kinetic force, increase output voltage swing, output stage has current-limiting protection function under short circuit or overcurrent condition in addition.
But to realize circuit low noise, high-precision feature, state's external circuit is repaiied using metal thin film resistor laser
Technique is adjusted, because domestic Flouride-resistani acid phesphatase bipolar process platform can not realize metal thin film resistor laser trimming technique, therefore, it is necessary to is sent out
Bright one kind can realize it is compatible with standard technology, and with low noise, high-precision operational amplifier.
The content of the invention
It is an object of the invention to for above-mentioned the problems of the prior art, there is provided a kind of high accuracy, the anti-spoke of low noise
Trim circuit and method for repairing and regulating according to operational amplifier, can compatible existing Flouride-resistani acid phesphatase standard bipolar process, and greatly save
Testing cost.
To achieve these goals, present invention high accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise trim circuit by starting
Formed with two amplifiers of biasing circuit and structure identical；Two described amplifiers include input stage circuit, centre
Level circuit and output-stage circuit；Described input stage circuit can complete buffering and the chopped-off head amplification of input voltage, have and be used for
Improve input impedance, reduce the differential pair tube structure that offset voltage matches dc point with temperature drift, foundation；Intergrade electricity
Road, which has, to be used to improve voltage gain and the collapsible grounded base of output voltage swing launches level structure altogether；Output-stage circuit has can
Expanding internal electric current, the triode for improving rear class driving force, increasing output voltage swing, the parameter of triode are identical and to recommend
Form exports；Described input stage circuit, which has, trims network, and described startup is adopted with biasing circuit and two amplifiers
Built with polysilicon resistance.
It is described trim network trim scope as the μ V of -200 μ V~150, when circuit actual test value is in the μ of -225 μ V~175
V, the offset voltage of circuit can be trimmed between the μ V of -25 μ V~25 by trimming network.
The described network that trims trims resistance including being divided into the equivalent of two-way, by adjusting the equivalent resistance for trimming resistance,
Make the electric current I for flowing through two-way resistanceC1、IC2It is equal, adjust it is equivalent trim resistance when subtract IC1、IC2Existing deviation.
The described network that trims is divided into two-way, wherein including the first trimming module all the way, another way trims mould including second
Block and the 3rd trimming module；Described the first trimming module, the second trimming module and the 3rd trimming module is by multiple resistance groups
Conjunction forms, and makes two-way electric current I by adjusting resistancec1=Ic2；
The first described trimming module include the resistance R1, the resistance R2 that are joined directly together with power supply and by diode D1 with
Power supply connected resistance R15, described resistance R1, R2, R15 connect parallel with one another resistance R3, R4, R5, R6, parallel with one another
Resistance R3, R4, R5, R6 input amplifier tube through resistance R13 connections first；The second described trimming module includes and the direct phase of power supply
Resistance R7, the resistance R8 even and resistance R16 being connected by diode D2 with power supply；The 3rd described trimming module include with
Resistance R7, R8, R16 are connected and resistance R9, R10, R11, R12, R17 parallel with one another, resistance R17 pass through diode D3 and resistance
R7, R8, R16 are connected, and resistance R9, R10, R11, R12, R17 parallel with one another input amplifier tube through resistance R14 connections second, the
One input amplifier tube is grounded with the second input amplifier tube；
Trim network and include a, b, c, d, e five and trim pressure welding point, pressure welding point e is positive supply, pressure welding point e connection resistance
R1, R2, R7, R8 and diode D1, D2；Pressure welding point a, e is to trim the pressure welding point that can reach -100 μ V, and pressure welding point a is set
Between diode D2 and resistance R16；Pressure welding point b, c is to trim the pressure welding point that can reach -50 μ V, and pressure welding point b is arranged on
Between two trimming modules and the 3rd trimming module, pressure welding point c is arranged between diode D3 and resistance R17；Pressure welding point e, d is to repair
200 μ V pressure welding point can be reached by adjusting, and pressure welding point d is arranged between diode D1 and resistance R15；According to the initial actual measurement of circuit
It is worth size, it is corresponding to trim to index request scope.
Two BE knots of the startup and increase in biasing circuit, which raise current potential, makes diode breakdown voltage normal under 6.8V
Work.
The internal compensation structure that circuit work frequency can be made stable is set in described intergrade circuit.
High-precision, the Flouride-resistani acid phesphatase operational amplifier of low noise of the invention trims the technical scheme that the method for repairing and regulating of circuit uses
For：
Obtain the initial measured value of circuit and correspondingly trimmed according to the initial measured value size of circuit：
1) when measured value is between -225uV~-175uV, e, d both ends are trimmed；
2) when measured value is between -175uV~-125uV, e, d both ends are first trimmed, after trim b, c both ends；
3) when measured value is between -125uV~-75uV, e, d both ends are first trimmed, after trim a, e both ends；
4) when measured value is between -75uV~-25uV, e, d both ends are first trimmed, after trim a, e both ends and b, c both ends；
5) when measured value is between -25uV~25uV, without trimming；
6) when measured value is between 25uV~75uV, b, c both ends are trimmed；
7) when measured value is between 75uV~125uV, a, e both ends are trimmed；
8) when measured value is between 125uV~175uV, a, e both ends are first trimmed, after trim b, c both ends.
Specifically trimming operation is：
1) when measured value is between -225uV~-175uV, e, d both ends is trimmed, make test value between -25uV~25uV；
2) when measured value is between -175uV~-125uV, e, d both ends are first trimmed, make test value -25uV~75uV it
Between, after trim b, c both ends, make test value between -25uV~25uV；
3) when measured value is between -125uV~-75uV, e, d both ends are first trimmed, make test value 75uV~125uV it
Between, after trim a, e both ends, make test value between -25uV~25uV；
4) when measured value is between -75uV~-25uV, e, d both ends are first trimmed, make test value 125uV~175uV it
Between, after trim a, e both ends and b, c both ends, make test value between -25uV~25uV；
5) when measured value is between -25uV~25uV, it is not necessary to trim；
6) when measured value is between 25uV~75uV, b, c both ends is trimmed, make test value between -25uV~25uV；
7) when measured value is between 75uV~125uV, a, e both ends is trimmed, make test value between -25uV~25uV；
8) when measured value is between 125uV~175uV, a, e both ends is first trimmed, make test value between -75uV~25uV,
After trim b, c both ends, make test value between -25uV~25uV.
The equivalent resistance of first trimming module is the equivalent resistance of 18 sides, the second trimming module and the 3rd trimming module
For 18 sides, resistance R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12 are 2 sides during without trimming, resistance R13,
R14 is 16.5 sides；When trimming e, d both ends, diode D1 short circuits, adding the resistance R15 of 5.86 sides makes the first trimming module
All-in resistance is less than 18 sides；When trimming e, a both ends, diode D2 short circuits, adding the resistance R16 of 12.72 sides makes second to trim mould
The all-in resistance of block and the 3rd trimming module is less than 18 sides；When trimming b, c both ends, diode D3 short circuits, the electricity of 6.36 sides of addition
Resistance R17 makes the all-in resistance of the second trimming module and the 3rd trimming module be less than 18 sides.
Compared with prior art, the present invention has following beneficial effect：Start and biasing circuit and two amplifiers
Built by polysilicon resistance, set in input stage circuit and trim network, trimmed using polysilicon instead of metallic film
Resistance laser, which trims, can realize the high-precision feature of circuit, and greatly save testing cost.What the external circuit used
It is metal thin film resistor laser trimming technique, because domestic Flouride-resistani acid phesphatase bipolar process platform can not realize metal thin film resistor laser
Trim technique, the present invention use polysilicon resistance substitution film resistance, can the existing Flouride-resistani acid phesphatase standard bipolar process of compatibility, and
Circuit has Flouride-resistani acid phesphatase and low dose rate characteristic, has filled up the domestic sky in high performance operational amplifier process for machining and manufacturing
In vain.
Compared with prior art, operational amplifier method for repairing and regulating of the present invention has following beneficial effect：First according to electricity
The initial measured value in road determines whether circuit needs to be trimmed, if measured value meets that technical requirements (are in -25uV~25uV
Between) or beyond overriding scope (- 225 μ V~175 μ V), then without be trimmed again, if measured value is overriding
Scope (- 225 μ V~175 μ V), then technology is trimmed using Zener diode breakdown, diode is not turned under normal circumstances,
Diode both ends apply high-voltage pulse by diode breakdown, form the short-circuit resistance path of knot containing alloy, are so that can realize always
The adjustment of resistance is so as to changing input offset voltage.The present invention can be compatible existing using polysilicon resistance substitution film resistance
Flouride-resistani acid phesphatase standard bipolar process so that circuit has Flouride-resistani acid phesphatase low dose rate characteristic, in addition, being trimmed using polysilicon instead of metal
Film resistor laser trimming can realize the high-precision feature of circuit, and greatly save testing cost.
Brief description of the drawings
Certain model operational amplifier circuit structure figure of Fig. 1 foreign countries；
The circuit structure diagram of Fig. 2 operational amplifiers of the present invention；
Fig. 3 input stage circuits of the present invention trim part-structure figure；
Embodiment
The present invention is described in further detail below in conjunction with the accompanying drawings.
Referring to Fig. 2-3, high accuracy of the present invention based on Flouride-resistani acid phesphatase bipolar process, low noise operational amplifier, mainly by opening
It is dynamic to be formed with biasing circuit, left and right sides amplifier.The present invention is mainly in amplifier architecture, by setting suitable input stage
Network is trimmed, alternative metals film resistor laser trimming is trimmed with diode and polysilicon resistance, realizes input offset voltage
Accuracy rating.
After circuit electrifying startup, by the differences of diode Q47 and two BE knots resistance R251, R252 produce both with power supply
Voltage is unrelated, and there is the PTAT current of smaller positive temperature coefficient, the electric current to be formed after being compensated by Q63, Q57 collector current again
Temperature drift characteristic more preferably reference current, there is provided used to left and right sides amplifier.Because the technique of state's external circuit can be by Zener
Diode Q47 breakdown voltages accomplish 6V, because domestic process conditions are limited, so adding two BE knots in fig. 2 to raise
Current potential ensures diode breakdown voltage circuit normal work under 6.8V.Two-way amplifier architecture of the present invention is identical, by difference
Input stage, interstage amplifier section and complementary push-pull AB classes output stage are formed.Signal is amplified for the first time after entering input stage, is established
Enter interstage amplifier section after stable operating point.Intergrade improves operational amplifier using collapsible common base common emitter configuration
Voltage gain and output voltage swing.The finally output increase amplitude of oscillation in the form of recommending, improves rear class driving force.
Input stage uses differential pair tube structure D1, D2 to improve input impedance, reduce offset voltage and temperature drift, foundation
Good matching dc point, complete buffering and the chopped-off head amplification of input voltage.Wherein Q1~Q4 structure is larger when inputting
Step signal when, ensure diode it is breakdown, the voltage difference for input of checking the mark can be reduced faster, it is reduced to two
BE is tied, and is adjusted thereafter through the slew rate of circuit itself, in addition, circuit uses input bias current collocation structure.
By the tail current in Q11 and R3 exact mirror image first order constant current source structures (Q12 and R6), then through D3, Q9, Q5~
After Q8 conversion, form with inputting the complementary current equal in magnitude, in opposite direction to pipe D1, D2 base current, the two is mutual
After counteracting, from input end measuring to bias current should be zero in theory.
The structure constructs one and offset with input base current compensation electric current in opposite direction equal in magnitude, reduces
Input bias current improves input impedance, reduces influence of the noise to circuit, reduces the work(that operational amplifier absorbs from signal source
Rate.
Interstage amplifier section uses collapsible grounded base to launch level structure altogether and put with improving the gain of amplifier and output voltage
Width, meets the requirement of circuit entire gain, and this grade is provided with internal compensation resistance capacitance to ensure the frequency stabilization of circuit work
Property.
Output stage uses parameter identical triode to be exported in the form of recommending, and with expanding internal electric current, improves rear class and drives
Kinetic force, increase output voltage swing, output stage has current-limiting protection function under short circuit or overcurrent condition in addition.
Input stage circuit is increased to trim part in the course of the work：
Determine that maximum trims scope first, according to 3 σ principles, input offset voltage value is in normal distribution curve.
It is determined that it is -225uV~175uV to trim scope, desired value section is -25uV~25uV, to make IC1=IC2, it is necessary to
R1, R2 resistance are adjusted, calculates I firstC1、IC2Deviation：
IC1/IC2=e1.0082(wherein Vbe1-Vbe2=213 μ V) (3)
In layout design, R11=R12=18 side, but due to IC1With IC2Existing deviation, calculates R11=
17.8542 sides.
Trim in network design, on the premise of avoiding increasing chip area, use polysilicon resistance to be gone here and there simultaneously with rational
Connection mode realizes such scheme, general test equipment be can complete circuit trim test.
Input stage part trims technology using diode, and a, b, c, d, e are embodied as follows to trim pressure welding point：
1st, measured value trims e, d both ends between -225uV~-175uV, makes test value between -25uV~25uV；
2nd, measured value first trims e, d both ends between -175uV~-125uV, makes test value between -25uV~75uV,
After trim b, c both ends, make test value between -25uV~25uV；
3rd, measured value first trims e, d both ends between -125uV~-75uV, makes test value between 75uV~125uV,
After trim a, e both ends, make test value between -25uV~25uV；
4th, measured value first trims e, d both ends between -75uV~-25uV, makes test value between 125uV~175uV,
After trim a, e both ends and b, c both ends, make test value between -25uV~25uV；
5th, measured value is between -25uV~25uV, it is not necessary to trims；
6th, measured value trims b, c both ends between 25uV~75uV, makes test value between -25uV~25uV；
7th, measured value trims a, e both ends between 75uV~125uV, makes test value between -25uV~25uV；
8th, measured value first trims a, e both ends between 125uV~175uV, makes test value between -75uV~25uV, after
B, c both ends are trimmed, make test value between -25uV~25uV.
Network is trimmed more than, between final circuit offset voltage value can reach -25uV~25uV, conventional general fortune
Calculate amplifier test system to can be achieved to trim test, greatly save testing cost.Using polysilicon resistance trim technique with
Existing Flouride-resistani acid phesphatase standard bipolar process is completely compatible, and the actual Radiation hardness of circuit reaches 100krad (Si).
In summary, high accuracy, the circuit of low noise operational amplifier have the spies such as low imbalance, low biasing in the present invention
Point, the present invention can be by state's external circuit directly transplantings to domestic processing line, and also for removable value in other line constructions, line construction is complete
It is adapted to domestic Anti -irradiation line entirely, there is good economic and military prospect.
Claims (9)
1. the Flouride-resistani acid phesphatase operational amplifier of a kind of high accuracy, low noise trims circuit, it is characterised in that：By startup and biasing circuit
And two amplifier compositions of structure identical；Two described amplifiers include input stage circuit, intergrade circuit and defeated
Go out a grade circuit；Described input stage circuit can complete buffering and the chopped-off head amplification of input voltage, have and be used to improve input resistance
Anti-, reduction offset voltage matches the differential pair tube structure of dc point with temperature drift, foundation；Intergrade circuit, which has, to be used for
The collapsible grounded base for improving voltage gain and output voltage swing launches level structure altogether；Output-stage circuit has being capable of expanding internal electricity
Stream, the triode for improving rear class driving force, increasing output voltage swing, the parameter of triode is identical and is exported in the form of recommending；
Described input stage circuit, which has, trims network, and described startup is with biasing circuit and two amplifiers using polysilicon electricity
Resistance is built.
2. high accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise trim circuit according to claim 1, it is characterised in that：Institute
State trim network trim scope as the μ V of -200 μ V~150, when circuit actual test value is in the μ V of -225 μ V~175, by trimming
Network can trim the offset voltage of circuit between the μ V of -25 μ V~25.
3. the Flouride-resistani acid phesphatase operational amplifier of high accuracy according to claim 1 or claim 2, low noise trims circuit, it is characterised in that：
The described network that trims trims resistance including being divided into the equivalent of two-way, by adjusting the equivalent resistance for trimming resistance, makes to flow through two
The electric current I of road resistanceC1、IC2It is equal, adjust it is equivalent trim resistance when subtract IC1、IC2Existing deviation.
4. the Flouride-resistani acid phesphatase operational amplifier of high accuracy according to claim 1 or claim 2, low noise trims circuit, it is characterised in that：
The described network that trims is divided into two-way, wherein including the first trimming module (I) all the way, another way includes the second trimming module (II)
With the 3rd trimming module (III)；Described the first trimming module (I), the second trimming module (II) and the 3rd trimming module (III) is equal
Combined by multiple resistance, make two-way electric current I by adjusting resistancec1=Ic2；
Described the first trimming module (I) include the resistance R1, the resistance R2 that are joined directly together with power supply and by diode D1 with
Power supply connected resistance R15, described resistance R1, R2, R15 connect parallel with one another resistance R3, R4, R5, R6, parallel with one another
Resistance R3, R4, R5, R6 input amplifier tube through resistance R13 connections first；Described the second trimming module (II) includes straight with power supply
Meet connected resistance R7, resistance R8 and the resistance R16 being connected by diode D2 with power supply；The 3rd described trimming module
(III) include being connected with resistance R7, R8, R16 and resistance R9, R10, R11, R12, R17 parallel with one another, resistance R17 pass through two poles
Pipe D3 is connected with resistance R7, R8, R16, and resistance R9, R10, R11, R12, R17 parallel with one another input through resistance R14 connections second
Amplifier tube, the first input amplifier tube are grounded with the second input amplifier tube；
Trimming network and include a, b, c, d, e five and trim pressure welding point, pressure welding point e is positive supply, pressure welding point e connection resistance R1,
R2, R7, R8 and diode D1, D2；Pressure welding point a, e is to trim the pressure welding point that can reach -100 μ V, and pressure welding point a is arranged on two
Between pole pipe D2 and resistance R16；Pressure welding point b, c is to trim the pressure welding point that can reach -50 μ V, and pressure welding point b is arranged on second and repaiied
Between mode transfer block (II) and the 3rd trimming module (III), pressure welding point c is arranged between diode D3 and resistance R17；Pressure welding point e, d
It is to trim the pressure welding point that can reach 200 μ V, pressure welding point d is arranged between diode D1 and resistance R15；Initial according to circuit
Measured value size, it is corresponding to trim to index request scope.
5. high accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise trim circuit according to claim 1, it is characterised in that：Institute
Two BE knots of increase, which raise current potential, in the startup stated and biasing circuit makes diode breakdown voltage normal work under 6.8V.
6. high accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise trim circuit according to claim 1, it is characterised in that：Institute
The internal compensation structure that circuit work frequency can be made stable is set in the intergrade circuit stated.
A kind of 7. side of trimming that circuit is trimmed using high accuracy, the Flouride-resistani acid phesphatase operational amplifier of low noise as claimed in claim 1
Method, it is characterised in that obtain the initial measured value of circuit and correspondingly trimmed according to the initial measured value size of circuit：
1) when measured value is between -225uV~-175uV, e, d both ends are trimmed；
2) when measured value is between -175uV~-125uV, e, d both ends are first trimmed, after trim b, c both ends；
3) when measured value is between -125uV~-75uV, e, d both ends are first trimmed, after trim a, e both ends；
4) when measured value is between -75uV~-25uV, e, d both ends are first trimmed, after trim a, e both ends and b, c both ends；
5) when measured value is between -25uV~25uV, without trimming；
6) when measured value is between 25uV~75uV, b, c both ends are trimmed；
7) when measured value is between 75uV~125uV, a, e both ends are trimmed；
8) when measured value is between 125uV~175uV, a, e both ends are first trimmed, after trim b, c both ends.
8. method for repairing and regulating according to claim 7, it is characterised in that specifically trimming operation is：
1) when measured value is between -225uV~-175uV, e, d both ends is trimmed, make test value between -25uV~25uV；
2) when measured value is between -175uV~-125uV, e, d both ends is first trimmed, make test value between -25uV~75uV, after
B, c both ends are trimmed, make test value between -25uV~25uV；
3) when measured value is between -125uV~-75uV, e, d both ends is first trimmed, make test value between 75uV~125uV, after
A, e both ends are trimmed, make test value between -25uV~25uV；
4) when measured value is between -75uV~-25uV, e, d both ends is first trimmed, make test value between 125uV~175uV, after
A, e both ends and b, c both ends are trimmed, make test value between -25uV~25uV；
5) when measured value is between -25uV~25uV, it is not necessary to trim；
6) when measured value is between 25uV~75uV, b, c both ends is trimmed, make test value between -25uV~25uV；
7) when measured value is between 75uV~125uV, a, e both ends is trimmed, make test value between -25uV~25uV；
8) when measured value are between 125uV~175uV, a, e both ends are first trimmed, make test value between -75uV~25uV, after repair
B, c both ends are adjusted, make test value between -25uV~25uV.
9. method for repairing and regulating according to claim 7, it is characterised in that：The equivalent resistance of first trimming module (I) is 18 sides,
The equivalent resistance of second trimming module (II) and the 3rd trimming module (III) is 18 sides, resistance R1, R2 during without trimming, R3,
R4, R5, R6, R7, R8, R9, R10, R11, R12 are 2 sides, and resistance R13, R14 are 16.5 sides；When trimming e, d both ends, diode
D1 short circuits, adding the resistance R15 of 5.86 sides makes the all-in resistance of the first trimming module (I) be less than 18 sides；When trimming e, a both ends,
Diode D2 short circuits, adding the resistance R16 of 12.72 sides makes the all-in resistance of the second trimming module (II) and the 3rd trimming module (III)
Less than 18 sides；When trimming b, c both ends, diode D3 short circuit, add 6.36 sides resistance R17 make the second trimming module (II) and
The all-in resistance of 3rd trimming module (III) is less than 18 sides.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109872853A (en) * | 2019-02-22 | 2019-06-11 | 西安微电子技术研究所 | A kind of CrSi2Film resistor and its laser trimming method |
| CN110048675A (en) * | 2019-05-06 | 2019-07-23 | 西安微电子技术研究所 | A kind of circuit improving ambipolar track to track amplifier input bias current performance |
| CN111431492A (en) * | 2020-05-18 | 2020-07-17 | 上海类比半导体技术有限公司 | Common mode rejection ratio and gain trimming circuit of differential amplifier |
| CN114637354A (en) * | 2022-03-28 | 2022-06-17 | 杭州红芯微电子信息科技有限公司 | Trimming circuit for operational amplifier circuit |
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| CN106953610A (en) * | 2017-03-23 | 2017-07-14 | 哈尔滨理工大学 | It is a kind of to introduce the rail-to-rail operation amplifier that negative resistance inputs tubular construction |
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| CN101958688A (en) * | 2009-02-23 | 2011-01-26 | 14号公司 | Amplifier and method with input imbalance finishing |
| CN102158180A (en) * | 2011-03-28 | 2011-08-17 | 浙江大学 | Switch-type operation amplifier with low power consumption |
| CN206058021U (en) * | 2016-09-29 | 2017-03-29 | 西安微电子技术研究所 | A kind of Flouride-resistani acid phesphatase second order compensation high accuracy, Low Drift Temperature band gap reference voltage source circuit |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109872853A (en) * | 2019-02-22 | 2019-06-11 | 西安微电子技术研究所 | A kind of CrSi2Film resistor and its laser trimming method |
| CN109872853B (en) * | 2019-02-22 | 2020-10-02 | 西安微电子技术研究所 | CrSi2Thin film resistor and laser trimming method thereof |
| CN110048675A (en) * | 2019-05-06 | 2019-07-23 | 西安微电子技术研究所 | A kind of circuit improving ambipolar track to track amplifier input bias current performance |
| CN110048675B (en) * | 2019-05-06 | 2023-03-21 | 西安微电子技术研究所 | Circuit for improving input bias current performance of bipolar rail-to-rail operational amplifier |
| CN111431492A (en) * | 2020-05-18 | 2020-07-17 | 上海类比半导体技术有限公司 | Common mode rejection ratio and gain trimming circuit of differential amplifier |
| CN111431492B (en) * | 2020-05-18 | 2023-09-05 | 上海类比半导体技术有限公司 | Differential amplifier common mode rejection ratio and gain trimming circuit |
| CN114637354A (en) * | 2022-03-28 | 2022-06-17 | 杭州红芯微电子信息科技有限公司 | Trimming circuit for operational amplifier circuit |
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