CN106788284A - A kind of linear error amplifier with temperature-compensating - Google Patents
A kind of linear error amplifier with temperature-compensating Download PDFInfo
- Publication number
- CN106788284A CN106788284A CN201710013919.8A CN201710013919A CN106788284A CN 106788284 A CN106788284 A CN 106788284A CN 201710013919 A CN201710013919 A CN 201710013919A CN 106788284 A CN106788284 A CN 106788284A
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- China
- Prior art keywords
- temperature
- amplifier
- differential pair
- error amplifier
- compensating
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45484—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit
- H03F3/45488—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with bipolar transistors as the active amplifying circuit by using feedback means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45928—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit
- H03F3/45932—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection using IC blocks as the active amplifying circuit by using feedback means
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention belongs to Analogous Integrated Electronic Circuits technical field, specifically propose a kind of high linearity mutual conductance error amplifier with temperature-compensating, comprising PTAT current source, common collector level shift circuit, the frequency compensation network that the trsanscondutance amplifier and C1, C2, R1 that uneven differential pair is constituted are constituted.Relatively low magnitude of voltage is lifted to high value by common collector level shift circuit, is input to second level trsanscondutance amplifier；Using many tanh rules, second level trsanscondutance amplifier is made up of uneven differential pair, and effective input voltage range is extended, and the linearity is improved；PTAT current source provides tail current for differential pair, and the amplifier mutual conductance that compensation temperature change is caused is unstable；Frequency compensation network produces suitable zero pole point, mutual conductance error amplifier phase margin is reached 60 degree.Error amplifier disclosed by the invention has dynamic electric voltage input range wider, and temperature susceplibility is low, is particularly suited for the error amplifier of DC DC converters.
Description
Technical field
The invention belongs to Analogous Integrated Electronic Circuits technical field, more particularly to a kind of linear transconductance error with temperature-compensating
Amplifier.
Background technology
Error amplifier is very important integrated circuit modules in Analogous Integrated Electronic Circuits, is mainly used in the mistake of analog signal
Difference detection and amplification.For example in dc-dc, error amplifier detection output feedback sample voltage, and with fixed voltage
On the basis of, amplify feedback voltage residual quantity, output signal participates in the final output that late-class circuit adjusts converter.Therefore, error is put
Big device plays vital effect in the whole adjustment loop of dc-dc.It is to system accuracy, speed, stability
Influence the characteristics of require with high-gain, high cmrr, big input dynamic range and high and stabilization transconductance value.From
From the point of view of circuit structure, error amplifier is a differential input, and the trsanscondutance amplifier of Single-end output, the tail current of differential pair is usual
There is provided by fixed reference current source.
Traditional input difference pair is as shown in Fig. 2 its input and output current relationship is
Wherein iC1+iC2=I0, VBE1-VBE2=VIN。
For a balanced differential for, formula (1) Taylor expansion then has
In order that differential pair linear work, linear segment will be far longer than cubic term part, it is assumed here that its ratio is ten
Times, then
± 25mV is the theoretical small signal value of differential pair energy Linear Amplifer, and actual Linear Amplifer scope is only ± 5mV.This
Individual value far can not meet the performance requirement of error amplifier.Therefore, various methods are already used to improve the linear of amplifier,
Including：Feedforward control, pre-corrected, emitter degeneration and Nonlinear elimination.
The content of the invention
Present invention aim at constructing, a kind of simple structure and dynamic range suitable for dc-dc be big, common mode suppression
The system linear transconductance amplifier higher than high and PSRR, and introduce what temperature-compensating decrease amplifier mutual conductance was varied with temperature
Unstability.
The linear transconductance amplifier includes PTAT current source, and common collector level shift circuit, uneven differential pair is constituted
Trsanscondutance amplifier and C1, C2, R1 constitute frequency compensation network.Common collector level shift circuit is by relatively low magnitude of voltage
High value is lifted to, the voltage for needed for second level trsanscondutance amplifier provides normal work；Using many tanh rules, second
Level trsanscondutance amplifier is made up of uneven differential pair, and its effective voltage input range is extended, and the linearity is improved；PTAT electricity
Stream source provides tail current for differential pair, and the amplifier mutual conductance that compensation temperature change is caused is unstable；Frequency compensation network is generated
Suitable zero pole point, makes mutual conductance error amplifier phase margin reach 60 degree, working stability.
Creativeness of the invention is the input difference of error amplifier to by the imbalance using many tanh rules
Differential pair is constituted, and has widened input dynamic range；Output end adds common grid to improve PSRR；Meanwhile, differential pair tail
Electric current is changed to be provided by PTAT current source, improves temperature stability.
Many tanh rules can be described as：It is right by the way that differential pair of the multiple with independent base bias voltage is in parallel
Mutual conductance is split along control source axle, to extend the effective voltage input range of differential pair.Due to each difference unit compared with
It is linear on small input range, therefore differential pair as multiple is rationally moved along input shaft, what is exported shows as
The superposition of multiple linearly intervals, generally obtains a larger linearity.
Specific embodiment
Uneven differential pair has two kinds of typical circuit structures in bipolar transistor circuit:Many compensation bias structures and
Multi-emitter area structure, the present invention is designed based on multi-emitter area structure, and uneven differential pair is as shown in Figure 3.Move
Differential pair output current afterwards is
So, in order that linearity of amplifier amplifies, according to hypothesis above, it is only necessary to
Because the present invention is designed based on the uneven differential pair of many aspect ratio structures, the output of structure shown in Fig. 3
Electric current is represented by
Therefore,For the non-equilibrium differential pair of two-stage,
According to formula (5), to make the range of linearity for ± 50mV, then Δ V >=30mV, and actually 60mV can be obtained preferably
Effect.A is designed as in the present invention2/A1=4, then Δ Vopm=72mV.
Herein uneven differential pair is constituted using many aspect ratio structures.With the rising of temperature, it may appear that following two existing
As：1. original and allochthonous transfer function can all become lower wider, and allochthonous transfer function can also move right；②
Offset voltage shown in formula (7) increases with the rising of temperature.Two kinds of phenomenons automatically form compensation so that constant transconductance area according to
Old holding level.
Although in addition, from analysis above it will be seen that constant transconductance area level, its peak value can be with temperature
Rising and reduce.
It can be seen that, due to V in formula (8)TPresence, gmPeak value can reduce with the rising of temperature.In order that gmPeak value is not received
Temperature influences, and uses PTAT current source that tail current is provided for differential pair, forms temperature-compensating.Therefore, tail current is
After using PTAT current source to provide tail current formation temperature-compensating for differential pair,
By formula (10) as can be seen that gmPeak value size is temperature independent.
Therefore, the tail current that the differential amplification structure has dynamic range wider, differential pair is provided by PTAT current source,
Realize temperature-compensating so that Linear Amplifer region not temperature influence substantially.Meanwhile, the common grid of output stage addition are to improve electricity
Source rejection ratio.Input stage VFB is lifted to by difference amplifier normal work using common emitter level shift structure needed for voltage
Value.
Brief description of the drawings
To become apparent from features described above of the invention and advantage, below in conjunction with the accompanying drawings to specific embodiment of the invention
It is described in detail.
Fig. 1 is Figure of abstract.
Fig. 2 show traditional differential configuration, including the Differential Input pair and electric current that two bipolar transistors are constituted
The tail current that benchmark is provided.
Fig. 3 show uneven differential pair structure.Its principle is many tanh rules, and implementation method is using different hairs
The bipolar transistor of emitter area constitutes differential pair so that two transfer curves of pipe divide left and right in the horizontal direction
From so as to realize the superposition of the range of linearity, Linear Amplifer scope has been widened.In the present invention.In fact, so that linear amplification region
The constant optimal area ratio of mutual conductance is 3.75:1.But due to the limitation of component models size in simulation process storehouse, the present invention will
Its area ratio is set to 4:1, remain to obtain larger Linear Amplifer scope.Now, Δ V=2VTln(A2/A1)
Fig. 4 show first order level shift circuit.
Fig. 5 show second level transconductance amplifier circuit.Wherein include:The uneven difference that Q1, Q2, Q3, Q4 are constituted is defeated
It is right to enter；The current mirror that NMOS tube MN1, MN2, MN3 are constituted, for differential pair provides tail current；What PMOS MP5, MP6, MP7 were constituted
Grid pair, improve output resistance altogether, increase PSRR；PMOS MP1, MP2, MP3, MP4 and NMOS tube MN3, MN4, MN5, MN6 are complete
Conversion of the terminal voltage output in pairs to one-terminal current output.
Fig. 6 show PTAT current source.The size of current that PTAT current source is produced is (VTLnN)/R, wherein N are QA and QB
Area ratio.Therefore the tail current I of differential pair0=(VTLnN)/R, is directly proportional to temperature.Then g is just obtainedm=(lnN/2R)
sech2[(VIN±ΔV)/2VT], it is seen that gmPeak value is temperature independent.
Integrated circuit operation principle is as follows：(1) first order common collector level shift：VREFIN magnitudes of voltage are 0.6V, VFB
Voltage is output feedback voltage.It is left 1.5V to be lifted to by common collector PNP pipe and resistance R3 and R5, VIN+ and VIN-
It is right, it is ensured that second level normal work.(2) second level trsanscondutance amplifier is made up of uneven differential pair, improves Linear Amplifer model
Enclose, while its tail current is provided by PTAT current source, constitute temperature-compensating so that amplifier mutual conductance does not become with temperature substantially
Change.
Embodiments of the present invention are elaborated above.But the present invention is not limited to above-mentioned implementation method,
In the ken that art those of ordinary skill possesses, can also be done on the premise of present inventive concept is not departed from
Go out various change.Therefore, every content without departing from technical solution of the present invention, implements according to technical spirit of the invention to more than
Any simple modification, equivalent variation and modification that example is done, still fall within the range of technical solution of the present invention protection.
Claims (4)
1. a kind of linear error amplifier with temperature-compensating, including：
Common collector level shift circuit, for output feedback voltage and reference voltage to be displaced into the normal work of second level amplifier
Higher voltage value needed for making；
Second level high linearity trsanscondutance amplifier, the output error voltage for receiving and amplifying common-collector circuit；
Resistance capacitance frequency compensation network, for the frequency compensation of whole system, makes its loop stability.
2. the linear error amplifier of temperature-compensating is carried as claimed in claim 1, it is characterised in that：Second level mutual conductance is amplified
To being made up of two uneven differential pairs, its theoretical foundation is the output current of bipolar transistor differential pair to the input difference of device
Formula, its principle is many tanh rules；Described uneven differential pair is 4 by emitter area ratio:1 bipolar transistor
Constitute, on less input range be linear due to each difference unit, therefore by two such differential pairs along input
Axle is rationally moved, and what is exported shows as two superpositions of linearly interval, generally obtains a larger linearity；In addition,
The imbalance that emitter area is caused is per se with temperature-compensating so that Linear Amplifer scope is basically unchanged.
3. the linear error amplifier of temperature-compensating is carried as claimed in claim 1, it is characterised in that：The tail current of differential pair
There is provided by PTAT current source, realize the counteracting of temperature coefficient so that amplifier transconductance value is not varied with temperature, realize that temperature is mended
Repay, compared with fixed reference current source provides tail current, the linearity that PTAT current source provides the amplifier of tail current has more
Good temperature stability.
4. the linear error amplifier with temperature-compensating as claimed in claim 1, the common grid pair of output end addition, improve electricity
Source rejection ratio.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710013919.8A CN106788284A (en) | 2017-01-09 | 2017-01-09 | A kind of linear error amplifier with temperature-compensating |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710013919.8A CN106788284A (en) | 2017-01-09 | 2017-01-09 | A kind of linear error amplifier with temperature-compensating |
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| Publication Number | Publication Date |
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| CN106788284A true CN106788284A (en) | 2017-05-31 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803761A (en) * | 2018-06-25 | 2018-11-13 | 电子科技大学 | It is a kind of to contain high-order temperature compensated LDO circuit |
| CN110048675A (en) * | 2019-05-06 | 2019-07-23 | 西安微电子技术研究所 | A kind of circuit improving ambipolar track to track amplifier input bias current performance |
| CN111162739A (en) * | 2020-01-09 | 2020-05-15 | 电子科技大学 | Transconductance operational amplifier with wide linear input range |
| CN113346846A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | Radio frequency differential amplifier based on silicon-based BJT process and method for improving gain temperature stability of radio frequency differential amplifier |
| FR3113344A1 (en) * | 2020-08-04 | 2022-02-11 | Stmicroelectronics (Grenoble 2) Sas | Level converter circuit |
-
2017
- 2017-01-09 CN CN201710013919.8A patent/CN106788284A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108803761A (en) * | 2018-06-25 | 2018-11-13 | 电子科技大学 | It is a kind of to contain high-order temperature compensated LDO circuit |
| CN108803761B (en) * | 2018-06-25 | 2020-02-18 | 电子科技大学 | LDO circuit that contains high-order temperature compensation |
| CN110048675A (en) * | 2019-05-06 | 2019-07-23 | 西安微电子技术研究所 | A kind of circuit improving ambipolar track to track amplifier input bias current performance |
| CN110048675B (en) * | 2019-05-06 | 2023-03-21 | 西安微电子技术研究所 | Circuit for improving input bias current performance of bipolar rail-to-rail operational amplifier |
| CN111162739A (en) * | 2020-01-09 | 2020-05-15 | 电子科技大学 | Transconductance operational amplifier with wide linear input range |
| CN111162739B (en) * | 2020-01-09 | 2023-04-28 | 电子科技大学 | Transconductance operational amplifier with wide linear input range |
| FR3113344A1 (en) * | 2020-08-04 | 2022-02-11 | Stmicroelectronics (Grenoble 2) Sas | Level converter circuit |
| US11757448B2 (en) | 2020-08-04 | 2023-09-12 | Stmicroelectronics (Grenoble 2) Sas | Level converter circuit |
| CN113346846A (en) * | 2021-06-18 | 2021-09-03 | 中国电子科技集团公司第二十四研究所 | Radio frequency differential amplifier based on silicon-based BJT process and method for improving gain temperature stability of radio frequency differential amplifier |
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Application publication date: 20170531 |