CN110024113A - 集成电路封装结构及方法 - Google Patents
集成电路封装结构及方法 Download PDFInfo
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- CN110024113A CN110024113A CN201680090828.8A CN201680090828A CN110024113A CN 110024113 A CN110024113 A CN 110024113A CN 201680090828 A CN201680090828 A CN 201680090828A CN 110024113 A CN110024113 A CN 110024113A
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 218
- 238000009413 insulation Methods 0.000 claims abstract description 104
- 239000002245 particle Substances 0.000 claims description 42
- 238000004519 manufacturing process Methods 0.000 claims description 37
- 239000004020 conductor Substances 0.000 claims description 35
- 238000004806 packaging method and process Methods 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 210000001503 joint Anatomy 0.000 claims description 11
- 230000009471 action Effects 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000003032 molecular docking Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 239000011799 hole material Substances 0.000 description 96
- 238000004891 communication Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 6
- 238000003466 welding Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000002991 molded plastic Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 206010037660 Pyrexia Diseases 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- -1 101 Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/5386—Geometry or layout of the interconnection structure
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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Abstract
一种集成电路封装结构及方法,其中集成电路封装结构包括:基板(100),所述基板(100)设有电路层(110)以及精细连线(210);芯片(400),所述芯片(400)设有精细引脚(420)、以及芯片引脚(410);所述基板(100)设有至少两个所述芯片(400),至少一个所述芯片(400)的所述芯片引脚(410)与所述电路层(110)电连接,所述电路层(110)上设有绝缘补丁(200),所述绝缘补丁(200)上设有精细连线(210),所述芯片(400)的精细引脚(420)与所述精细连线(210)电连接、至少两个所述芯片(400)通过所述精细连线(210)直接电连接。传输速度快、提高芯片性能。
Description
PCT国内申请,说明书已公开。
Claims (18)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
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PCT/CN2016/107834 WO2018098650A1 (zh) | 2016-11-30 | 2016-11-30 | 集成电路封装结构及方法 |
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CN108933154B (zh) * | 2017-05-26 | 2021-04-27 | 京东方科技集团股份有限公司 | 有机发光二极管显示基板的制备方法、显示基板及显示装置 |
US11197384B1 (en) * | 2020-06-29 | 2021-12-07 | Quanta Computer Inc. | Tool-less latch system for a node sled |
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- 2016-11-30 WO PCT/CN2016/107834 patent/WO2018098650A1/zh active Application Filing
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- 2016-11-30 US US16/464,896 patent/US11183458B2/en active Active
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US20190287909A1 (en) | 2019-09-19 |
US11183458B2 (en) | 2021-11-23 |
CN110024113B (zh) | 2023-11-24 |
WO2018098650A1 (zh) | 2018-06-07 |
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