CN110021686A - A kind of preparation method and extension Stacked wafer, chip of mini LED chip - Google Patents
A kind of preparation method and extension Stacked wafer, chip of mini LED chip Download PDFInfo
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- CN110021686A CN110021686A CN201811015965.2A CN201811015965A CN110021686A CN 110021686 A CN110021686 A CN 110021686A CN 201811015965 A CN201811015965 A CN 201811015965A CN 110021686 A CN110021686 A CN 110021686A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 57
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 130
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 238000007788 roughening Methods 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims description 9
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 108010075465 minican Proteins 0.000 description 5
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- 238000011160 research Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
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- 206010040844 Skin exfoliation Diseases 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Abstract
The invention discloses a kind of preparation methods of mini LED chip, its step includes: to build to grow using gallium nitride as the gallium nitride platform layer of material on brilliant substrate in extension, the epitaxial growth extension wall crystal layer on the gallium nitride platform layer using gallium nitride as material, define luminous zone, prepare exposure mask, etch N gallium nitride platform, tangible luminous zone is etched to N gallium nitride layer, prepare P electrode, N electrode, mini LED chip to extension is divided to build at brilliant substrate or at gallium nitride platform layer, electrode surface is fixed on the same surface of same substrate, it removes extension and builds brilliant substrate, polishing thinned die thickness is carried out to preset thickness to surface at removing, roughening or graphical treatment are carried out to chip gallium nitride platform layer surface, the preparation of mini LED chip method is prepared using the present invention Chip improves yield.
Description
Technical field
The present invention relates to the preparation methods of LED chip.It is more particularly related to a kind of system of mini LED chip
Preparation Method and the extension Stacked wafer prepared in the preparation method preparation process, mini LED chip.
Background technique
The last century 50's after the first LED is developed, since its luminous intensity is limited, is only applied to instrument
The instruction light source of instruments and meters, LED is grown rapidly within this following decades, and various photochromic LED are developed production
Out, the light efficiency of LED also gradually has been improved, and increasingly prominent with global energy shortage problem, all orders of society is to energy conservation
The LED light source of environmental protection is increasingly paid close attention in the application of lighting area, and the LED that inspires popular confidence in the process is gradually widely used in
In traffic lights and large-area displays screen, gratifying social benefit and economic benefit are achieved, so that everybody is illuminating it
The prospect of the application in field is filled with expectation, and a large amount of fund, technology are put in the R&D process of LED technology, LED technology
Continuous development promotion have substitution incandescent lamp, tengsten lamp and fluorescent lamp equally likely possibility, lighting area receive also from
Past outdoor landscape indicates to convert to outdoor lighting, room lighting, as beginning European Union in 2009 implements that incandescent lamp is forbidden to make
With, energy saving subject under discussion is mentioned a Ge Xin stratum so that energy-saving environment-friendly LED indoors lighting area application it is more urgent.
Recently, field of LED illumination and display application field great market prospect attract under and government department it is big
To make every effort to promote into, each company puts into development & production one after another, and the reduction of LED cost makes LED in lighting area using more and more extensive, until
LED chip in 2011 is converted to drug on the market rapidly from supply falls short of demand before, so that each company has to LED chip again
Understanding is rectified, and on a low-cost basis, LED chip must change to the direction of high quality, high photosynthetic efficiency, shine LED not only
There is better prospect in bright field, and make its in the display application can it is more and more extensive, for improve display display effect
The research and development of fruit, small size LED chip obtain the favor of Liao Ge LED company, immediately micro-LED, mini-LED breed and
Raw, the quality for improving LED chip is still the research and development focus of each major company so far.
Summary of the invention
The object of the present invention is to provide a kind of preparation methods of mini LED chip, so as to improve mini LED chip
Yield is prepared, the preparation process of mini LED chip is simplified, reduces production cost.
Another object of the present invention is to provide a kind of New LED extension base chip, and extension can be improved and build crystalloid amount.
Another object of the present invention is to provide a kind of Novel LED chip, has tangible luminous zone, while improving out light efficiency
Rate, while it is default so that light-out effect is more met us.
In order to realize purposes and other advantages according to the present invention, a kind of preparation method of mini LED chip is provided,
As shown in a kind of mini LED chip structure schematic diagram of Fig. 1 present invention, chip size W, the height of chip is T, 50 μm < W <
250 μm, 1 < W/T < 10, step includes:
A extension builds brilliant substrate before extension builds crystalline substance, and growth is using gallium nitride as the gallium nitride platform of material on the brilliant substrate in extension base
Supporting layer；
B epitaxial growth extension wall crystal layer on the gallium nitride platform layer using gallium nitride as material；
C defines luminous zone, prepares exposure mask, etches N gallium nitride platform, etches tangible luminous zone to N gallium nitride layer；
D in extension wall crystal layer P- gallium nitride layer, prepare P electrode, N electrode respectively on N- gallium nitride layer, make n type gallium nitride
The difference of the upper surface level of the P electrode in N electrode and p-type gallium nitride layer on layer is h, h≤0.2 μm；
E divides mini LED chip to extension to build at brilliant substrate or at gallium nitride platform layer on extension Stacked wafer；
The same table of same substrate is fixed on the P electrode surface on N electrode surface, p-type gallium nitride layer on f n type gallium nitride layer
Face；
G builds brilliant substrate using laser lift-off extension；
H carries out polishing thinned die thickness to preset thickness to surface at mini LED chip removing；
I carries out roughening or graphical treatment to chip gallium nitride platform layer surface.
The preparation method of mini LED chip of the present invention serves as a contrast wherein the extension builds brilliant substrate selected from sapphire
Bottom, aluminium nitride substrate, zinc oxide substrate, silicon carbide substrates are that extension is built using gallium nitride as the gallium nitride platform layer of material
Brilliant substrate is placed in MOCVD or grows out in HVPE.
The preparation method of mini LED chip of the present invention, wherein it is described prolong outside build on brilliant substrate with gallium nitride
Thickness for the gallium nitride platform layer of material is selected from 1 μm --- between 100 μm.
The preparation method of mini LED chip of the present invention, wherein it is described prolong outside build on brilliant substrate with gallium nitride
Thickness for the gallium nitride platform layer of material is selected from 20 μm --- between 50 μm.
The preparation method of mini LED chip of the present invention, wherein the d divides mini on extension Stacked wafer
LED chip to extension is built at brilliant substrate or at gallium nitride platform layer, is to utilize deeply between each chip on extension Stacked wafer
The mode of etching or laser cutting is cut to extension and builds at brilliant substrate or at gallium nitride platform layer.
The preparation method of mini LED chip of the present invention, wherein the N electrode table on the f n type gallium nitride layer
The same surface of same substrate is fixed on P electrode surface on face, p-type gallium nitride layer, and substrate is non-conductive hard substrate, packet
It includes: blue film, peel plate, ceramic wafer, silicon substrate, aluminum substrate.
The preparation method of mini LED chip of the present invention, wherein the electrode surface is fixed on same substrate,
It is same for the N electrode surface on n type gallium nitride layer, the P electrode surface on p-type gallium nitride layer are fixed on by way of bonding
The same surface of substrate.
The preparation method of mini LED chip of the present invention, wherein it is described the step of e on extension Stacked wafer point
Mini LED chip to extension is built at brilliant substrate or at gallium nitride platform layer, and step b can be come in preparation step
Before and after either step between step g.
The preparation method of mini LED chip of the present invention, wherein the tangible luminous zone includes: rectangular, six sides
Shape, circle, triangle.
The preparation method of mini LED chip of the present invention, wherein the LED chip includes: rectangular, positive six side
Shape, equilateral triangle, wherein the luminous zone of rectangular LED chip includes: rectangular, hexagon, circular luminous area；Regular hexagon LED
The luminous zone of chip is hexagon；The luminous zone of equilateral triangle LED chip is triangle.
The preparation method of mini LED chip of the present invention, wherein the rectangular LED chip, equilateral triangle LED
The step e of chip divides at mini LED chip to the brilliant substrate in extension base on extension Stacked wafer or gallium nitride platform layer
Place, to divide mini LED chip by way of laser or etching；Lead in the preparation step of regular hexagon LED chip overetched
Mode divides mini LED chip.
The extension Stacked wafer prepared during the preparation method of mini LED chip of the present invention, comprising: extension
Brilliant substrate, extension wall crystal layer are built, builds in extension and is equipped between brilliant substrate and extension wall crystal layer using gallium nitride as the gallium nitride of material
Platform layer, gallium nitride platform layer is with a thickness of 1 μm --- between 100 μm.
The mini LED chip of the preparation method preparation of mini LED chip of the present invention, extension build brilliant substrate with
It is equipped between extension wall crystal layer using gallium nitride as the gallium nitride platform layer of material, gallium nitride platform layer is with a thickness of 1 μ
M --- between 100 μm, chip size W, the height of chip is T, 50 μm < W < 250 μm, 1 < W/T < 10, and the P electricity in LED chip
Pole, N electrode, the difference of upper surface level be h, h≤0.2 μm, N electrode is fixed on the same of same substrate with P electrode surface
Surface.
The mini LED chip of the preparation method preparation of mini LED chip of the present invention, extension build brilliant substrate outside
Prolong at the brilliant substrate in base or is removed at gallium nitride platform layer.
The present invention is include at least the following beneficial effects:
The present inventor is by the research to mini LED core piece preparation method, inventors have found that in the present inventive method:
Extension builds brilliant substrate before extension builds crystalline substance, and growth is using gallium nitride as the gallium nitride platform of material on the brilliant substrate in extension base
Layer, the epitaxial growth extension wall crystal layer on the gallium nitride platform layer using gallium nitride as material define luminous zone, and preparation is covered
Film etches N gallium nitride platform, etches tangible luminous zone to N gallium nitride layer, P- gallium nitride layer in extension wall crystal layer,
P electrode, N electrode are prepared on N- gallium nitride layer respectively, makes the N electrode on n type gallium nitride layer and the P electrode on p-type gallium nitride layer
The difference of upper surface level be h, h≤0.2 μm divides mini LED chip to extension to build at brilliant substrate on extension Stacked wafer
Or at gallium nitride platform layer, the P electrode surface on N electrode surface, p-type gallium nitride layer on n type gallium nitride layer is fixed on
The same surface of same substrate is built brilliant substrate using laser lift-off extension, is polished to surface at mini LED chip removing
Thinned die thickness carries out roughening or graphical treatment to chip gallium nitride platform layer surface to preset thickness.With this
The mini LED chip of preparation simplifies preparation process, has saved production cost.
The present inventor is by studying mini LED core piece preparation method, and chip size is W in the discovery present invention,
The height of chip is T, controls 50 μm < W < 250 μm, 1 < W/T < 10 grow one layer on substrate before epitaxial growth with gallium nitride
For the gallium nitride platform layer of material, tangible etching is carried out to the luminous zone after definition, etches tangible luminous zone, keeps P electric
Pole, N electrode upper surface the preparation of serial such as difference h≤0.2 μm in the preparation method for being effectively simplified mini LED chip
On the basis of, improve chip prepares yield and illumination effect.
Inventor builds brilliant substrate in extension by extension in the research discovery present invention to mini LED chip in the present invention
Before building crystalline substance, on the one hand building growth on brilliant substrate in extension can effectively mention using gallium nitride as the gallium nitride platform layer of material
On the other hand the lattice match of high subsequent epitaxial wall crystal layer can make it with the missing of effective compensation mini LED chip thickness
Chip is reduced in chip processing procedure is crushed probability.Especially in the present invention control gallium nitride platform layer with a thickness of 1 μ
M --- between 100 μm, preferably 20 μm --- between 50 μm, the lattice match of extension wall crystal layer can be made to reach optimum level, made
The broken probability of chip is reduced in chip processing procedure to bottom out.
Inventor is by carrying out tangibility to luminous zone in the research discovery present invention to mini LED chip in the present invention
Processing, including rectangular, hexagon, circle, triangle, wherein rectangular, hexagon, round especially circular luminous area, effectively mention
The high luminous uniformity of each angle of mini LED chip, makes its illumination effect especially in preparation display application in the application
More preferably, photochromic uniform saturation, each angle can be unified to develop the color.It is prepared by the mini LED chip for wherein having triangle luminous zone
Application in the illuminator of display can effectively improve the usage quantity of LED chip in unit area, improve LED electronics
The pixel of display.
Further advantage, target and feature of the invention will be partially reflected by the following instructions, and part will also be by this
The research and practice of invention and be understood by the person skilled in the art.
Detailed description of the invention
Figure of description is in order to which the present invention is explained further, and is not the limitation to invention protection scope of the invention.
Fig. 1 is the structural schematic diagram of mini LED chip of the present invention.
Fig. 2 is N in the structural schematic diagram of mini LED chip of the present invention, P electrode upper surface difference is h.
Fig. 3 is the structural schematic diagram of the not distinct mini LED chip of the present invention.
Fig. 4 is the mini for the gallium nitride platform layer that surface of the present invention carries out roughening or graphical treatment
The structural schematic diagram of LED chip.
Fig. 5 is the rectangular mini LED chip overlooking structure diagram that the present invention has rectangular luminous zone.
Fig. 6 is the rectangular mini LED chip overlooking structure diagram that the present invention has hexagonal luminous area.
Fig. 7 is the rectangular mini LED chip overlooking structure diagram that the present invention has circular luminous area.
Fig. 8 is the equilateral triangle mini LED chip overlooking structure diagram that the present invention has triangle luminous zone.
Fig. 9 is the equilateral triangle mini LED chip overlooking structure diagram that the present invention has circular luminous area.
Figure 10 is the regular hexagon mini LED chip overlooking structure diagram that the present invention has hexagonal luminous area.
Wherein 01 builds brilliant substrate for extension, and 02 is gallium nitride platform layer, and 03 is n type gallium nitride layer, and 04 is luminescent layer,
05 is p-type gallium nitride layer, and 06 is P electrode, and 07 is N electrode, 08 Cutting Road etch between chip and chip or laser, 2
For graphical or rough surface gallium nitride platform layer, 31 be rectangular chip, and 32 be equilateral triangle chip, and 33 are positive six
Side shape chip, 41 be rectangular luminous zone, and 42 be hexagonal luminous area, and 43 be circular luminous area, and 44 be triangle luminous zone.
Specific embodiment
Embodiment of the disclosure is described in the description.The disclosed embodiments are only example, and other are implemented
Example can take various and alternative form.It is digital not necessarily to scale；Certain functions may be exaggerated or minimized, to show spy
Determine the details of component.Therefore, disclosed specific structure and function detail are not necessarily to be construed as restrictive, but only as introduction
The representative basis of the various Application Examples of those skilled in the art.
With reference to embodiment, the present invention will be further described in detail, to enable those skilled in the art join
Book text can be implemented accordingly as directed, rather than the limitation to invention scope of the present invention.
It defines in the present specification: " mini LED chip " of the present invention are as follows: chip size W, the height of chip
For T, 50 μm < W < 250 μm, 1 < W/T < 10；The mini LED core that " tangible luminous zone " of the present invention is different from the prior art
The luminous zone of piece, mini LED chip of the present invention are overlooked from top to bottom, and there is specific shape in luminous zone, comprising: round, side
Shape, hexagon, triangle, wherein round, rectangular, hexagon luminous zone can be set in square shaped core on piece, hexagonal luminous
Area can be set on regular hexagon chip, triangle luminous zone is in equilateral triangle LED chip.It is rectangular in the present invention, six
The tangible luminous zone such as side shape, circle, triangle is the shape for the luminous zone that vertical view is presented above Mini CaN LED chip
Shape.Mini CaN LED chip is rectangular, regular hexagon, equilateral triangle in the present invention, for from Mini CaN LED chip
Side overlooks the shape of Mini CaN LED chip bottom or looks up the shape that chip is presented below Mini CaN LED chip.
Embodiment 1
The preparation method of mini LED chip of the present invention
As shown in figure 3, taking sapphire 01 first is that extension builds brilliant substrate, before extension builds crystalline substance, in Sapphire Substrate in MOCVD
Upper growth thickness is 25 μm, using gallium nitride as the gallium nitride platform layer 02 of material, grows extension on platform layer and builds
Crystal layer includes: n type gallium nitride layer 03, luminescent layer 04, p-type gallium nitride layer 05, as shown in fig. 7, defining the hair of mini LED chip
Light area, prepares exposure mask, etches N gallium nitride platform 31, etches circular luminous area 43 to N gallium nitride layer 03, in P- gallium nitride
P electrode 06, N electrode 07 are prepared respectively on layer 05, N- gallium nitride layer 03, make N electrode 07 and p-type nitrogen on n type gallium nitride layer 03
Change the upper surface of the P electrode 06 on gallium layer 05 in same level.Divide rectangular mini on extension Stacked wafer with laser
LED chip to extension is built at brilliant Sapphire Substrate 01, and using laser lift-off Sapphire Substrate 01, mini LED is thinned from removing place
Chip extremely chip height is 80 μm, is patterned place to the mini LED chip gallium nitride platform layer surface being thinned
Reason.A kind of novel mini LED chip is provided, the preparation process of general mini LED chip is optimized, simplifies preparation work
The yield for preparing that mini LED chip is improved while skill reduces production cost.
Embodiment 2
Take extension to build brilliant substrate, Sapphire Substrate, aluminium nitride substrate, zinc oxide substrate, silicon carbide substrates can be selected from, for
In the preparation of mini LED chip, preferably lattice matched transparent epitaxial opposite with gallium nitride builds brilliant substrate.
Building growth on brilliant substrate in extension, using gallium nitride as the gallium nitride platform layer of material, thickness is selected from 1 μm ---
Between 100 μm, preferably 20 μm --- between 50 μm, it can be by the gallium nitride platform layer of material of gallium nitride in MOCVD
Or growth in HVPE, brilliant substrate and gallium nitride on the one hand can be built to extension by the gallium nitride platform layer of material of gallium nitride
A lattice buffer between extension wall crystal layer more matches growth support platform as a subsequent lattice for building crystalline substance, can mention
High subsequent epitaxial builds brilliant quality；Another aspect gallium nitride platform layer as mini LED chip thickness compensation layers, for
Chip size is W, and the height of chip is T, 50 μm < W < 250 μm, 1 < W/T < 10, and the thickness of gallium nitride platform layer preferably 20 μ
M --- between 50 μm, improves in LED chip preparation process and improve yield, reduce the fragmentation probability of LED chip, can be dropped with this
Low a part of production cost of mini LED chip.
According to mini LED chip requirement for height, mini LED chip to extension is divided to build brilliant substrate on extension Stacked wafer
At place or gallium nitride platform layer, square shaped, equilateral triangle mini LED chip are carried out by way of etching or laser
Point, overetched mode is led to regular hexagon mini LED chip and is divided.This step is after extension builds crystalline substance, the brilliant substrate desquamation in base
Before and after any one preceding step.
As shown in Figure 5-10, rectangular or round or hexagonal luminous area is defined in rectangular mini LED chip, on positive six side
Shape mini LED chip defines hexagonal luminous area, defines triangle luminous zone or circular luminous in equilateral triangle LED chip
Then area prepares exposure mask, etch N gallium nitride platform, etch tangible luminous zone to N gallium nitride layer.It shines to patterned
Area can effectively increase light emission rate, improve light efficiency, and the luminous zone of different graphic can have different light efficiencies, as needed, relatively
In common LED chip, more preferably square, regular hexagon, especially more preferable circular luminous area.In addition, to there is triangle to shine
The equilateral triangle LED chip in area is more conducive to be assembled in illuminator, also make the LED chip between three primary colors assemble come
Light type is more preferable, it is possible to reduce the gap between chip and chip improves the quantity of the LED chip in unit area.
In extension wall crystal layer P- gallium nitride layer, prepare P electrode, N electrode respectively on N- gallium nitride layer, nitrogenize N-type
The difference of the upper surface level of the P electrode in N electrode and p-type gallium nitride layer on gallium layer is h, h≤0.2 μm, preferably upper surface
Same substrate is fixed on the N electrode surface in same level, n type gallium nitride layer, the P electrode surface on p-type gallium nitride layer
Same surface, substrate can be selected from: blue film, peel plate, ceramic wafer, silicon substrate, aluminum substrate.To improve out light, shelled using laser
Brilliant substrate is built from extension, polishing thinned die thickness is carried out to preset thickness, to chip to surface at mini LED chip removing
Gallium nitride platform layer surface carries out roughening or graphical treatment.
It is readily apparent that those skilled in the art can obtain from the various structures of embodiment according to the present invention
Obtain the various effects not yet referred directly to according to unpainful each embodiment.
Although the embodiments of the present invention have been disclosed as above, but its is not only in the description and the implementation listed
With.It can be applied to various suitable the field of the invention completely.It for those skilled in the art, can be easily
Realize other modification.Therefore without departing from the general concept defined in the claims and the equivalent scope, the present invention is simultaneously unlimited
In specific details and legend shown and described herein.
Claims (14)
1. a kind of preparation method of mini LED chip, which is characterized in that chip size W, the height of chip are T, 50 μm < W <
250 μm, 1 < W/T < 10, step includes:
A extension builds brilliant substrate before extension builds crystalline substance, and growth is using gallium nitride as the gallium nitride platform of material on the brilliant substrate in extension base
Supporting layer；
B epitaxial growth extension wall crystal layer on the gallium nitride platform layer using gallium nitride as material；
C defines luminous zone, prepares exposure mask, etches N gallium nitride platform, etches tangible luminous zone to N gallium nitride layer；
D in extension wall crystal layer P- gallium nitride layer, prepare P electrode, N electrode respectively on N- gallium nitride layer, make n type gallium nitride
The difference of the upper surface level of the P electrode in N electrode and p-type gallium nitride layer on layer is h, h≤0.2 μm；
E divides mini LED chip to extension to build at brilliant substrate or at gallium nitride platform layer on extension Stacked wafer；
The same table of same substrate is fixed on the P electrode surface on N electrode surface, p-type gallium nitride layer on f n type gallium nitride layer
Face；
G builds brilliant substrate using laser lift-off extension；
H carries out polishing thinned die thickness to preset thickness to surface at mini LED chip removing；
I carries out roughening or graphical treatment to chip gallium nitride platform layer surface.
2. the preparation method of mini LED chip according to claim 1, which is characterized in that wherein the extension is built
Brilliant substrate is selected from Sapphire Substrate, aluminium nitride substrate, zinc oxide substrate, silicon carbide substrates, using gallium nitride as the gallium nitride of material
Platform layer is that the brilliant substrate in extension base is placed in MOCVD or grows out in HVPE.
3. the preparation method of mini LED chip according to claim 2, which is characterized in that wherein described to prolong base crystalline substance outside
1 μm is selected from by the thickness of the gallium nitride platform layer of material of gallium nitride on substrate --- between 100 μm.
4. the preparation method of mini LED chip according to claim 3, which is characterized in that wherein described to prolong base crystalline substance outside
20 μm are selected from by the thickness of the gallium nitride platform layer of material of gallium nitride on substrate --- between 50 μm.
5. the preparation method of mini LED chip according to claim 1, which is characterized in that wherein the d is in extension
Divide mini LED chip to extension to build at brilliant substrate or at gallium nitride platform layer on Stacked wafer, is on extension Stacked wafer
Extension is cut between each chip in the way of etching or being cut by laser deeply to build at brilliant substrate or at gallium nitride platform layer.
6. the preparation method of mini LED chip according to claim 1, which is characterized in that the wherein f N-type nitrogen
The same surface of same substrate is fixed on N electrode surface on change gallium layer, the P electrode surface on p-type gallium nitride layer, and substrate is non-
Conductive hard substrate, comprising: blue film, peel plate, ceramic wafer, silicon substrate, aluminum substrate.
7. the preparation method of mini LED chip according to claim 6, which is characterized in that the wherein electrode surface
It is fixed on same substrate, is by way of bonding that the N electrode surface on n type gallium nitride layer, the P on p-type gallium nitride layer is electric
Pole surface is fixed on the same surface of same substrate.
8. the preparation method of mini LED chip according to claim 1, which is characterized in that it is wherein described the step of e exist
Mini LED chip to extension is divided to build at brilliant substrate or at gallium nitride platform layer, in preparation step on extension Stacked wafer
In can come either step between step b and step g before and after.
9. the preparation method of mini LED chip according to claim 1, which is characterized in that tangible luminous described in wherein
Area includes: rectangular, hexagon, circle, triangle.
10. the preparation method of mini LED chip according to claim 9, which is characterized in that the wherein LED chip
It include: rectangular, regular hexagon, equilateral triangle, wherein the luminous zone of rectangular LED chip includes: rectangular, hexagon, round hair
Light area；The luminous zone of regular hexagon LED chip is hexagon；The luminous zone of equilateral triangle LED chip is triangle.
11. the preparation method of mini LED chip according to claim 10, which is characterized in that the wherein rectangular LED
Chip, equilateral triangle LED chip step e divide mini LED chip to extension to build at brilliant substrate on extension Stacked wafer
Or at gallium nitride platform layer, to divide mini LED chip by way of laser or etching；The system of regular hexagon LED chip
Lead to overetched mode in standby step and divides mini LED chip.
12. the extension prepared during the preparation method of -11 described in any item mini LED chips according to claim 1 is built brilliant
Chip characterized by comprising extension builds brilliant substrate, extension wall crystal layer, builds in extension and sets between brilliant substrate and extension wall crystal layer
There is the gallium nitride platform layer using gallium nitride as material, gallium nitride platform layer is with a thickness of 1 μm --- between 100 μm.
13. the mini LED chip of the preparation method preparation of -11 described in any item mini LED chips according to claim 1,
It is equipped between brilliant substrate and extension wall crystal layer using gallium nitride as the gallium nitride platform of material it is characterized in that, being built in extension
Layer, gallium nitride platform layer is with a thickness of 1 μm --- and between 100 μm, chip size W, the height of chip is T, 50 μm < W <
250 μm, 1 < W/T < 10, P electrode, N electrode in LED chip, the difference of upper surface level be h, h≤0.2 μm, N electrode and P
Electrode surface is fixed on the same surface of same substrate.
14. mini LED chip prepared by the preparation method of mini LED chip according to claim 13, feature exist
In extension builds brilliant substrate and builds at brilliant substrate in extension or remove at gallium nitride platform layer.
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