CN103078017A - LED (Light-Emitting Diode) epitaxial structure and preparation method thereof - Google Patents
LED (Light-Emitting Diode) epitaxial structure and preparation method thereof Download PDFInfo
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- CN103078017A CN103078017A CN2012105761349A CN201210576134A CN103078017A CN 103078017 A CN103078017 A CN 103078017A CN 2012105761349 A CN2012105761349 A CN 2012105761349A CN 201210576134 A CN201210576134 A CN 201210576134A CN 103078017 A CN103078017 A CN 103078017A
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Abstract
The invention relates to an LED (Light-Emitting Diode) epitaxial structure, which comprises a substrate, a buffer layer, a sacrificial layer, an N type gallium nitride layer, a quantum well layer and a P type gallium nitride layer which are sequentially arranged from bottom to top, wherein a light shielding layer is also arranged between the sacrificial layer and the quantum well layer, and the light shielding layer is one layer or multiple layers of graph-free membranes, or the light shielding layer comprises a plurality of graphical sub light shielding layers and connecting layers; and the graphs of the sub light shielding layers are mutually matched, so that laser incident from the substrate direction can be blocked by the sub light shielding layers when the substrate is subjected to laser lift-off. Meanwhile, the invention provides a preparation method of the LED epitaxial structure. When the substrate of the LED epitaxial structure is subjected to laser lift-off, the light shielding layer reduces or blocks the laser to penetrate through the light shielding layer to reach the quantum well layer.
Description
Technical field
The present invention relates to light-emitting diode (LED) manufacturing field, particularly relate to a kind of LED epitaxial wafer and preparation method thereof.
Background technology
Gallium nitride (GaN) material is direct gap semiconductor, band gap is adjustable continuously from 1.8～6.2eV, be the preferred material of production high brightness blue, green glow and white light LEDs, product is widely used in indication light source of the engineerings such as large-sized solor demonstration, vehicle and traffic signals, indoor and outdoor decorative lighting, landscape ornamental illumination, identification label indication, solar street light, intelligent transportation control and general illumination and mobile phone, computer, sound equipment and household appliances etc.
On present LED market, owing to depositing current-crowding effect and the little problem of light-emitting area in the led chip of traditional planar electrode structure, the led chip of vertical electrode structure becomes one of mainstream solution.In order to realize this vertical stratification, needs employing laser lift-off realization substrate separates with luminous epitaxial loayer.Fig. 1 is the generalized section of prior art LED epitaxial structure, as shown in Figure 1, prior art is successively grown buffer layer 11, sacrifice layer 12, n type gallium nitride (N-GaN) layer 131, quantum well layer 132 and P type gallium nitride (P-GaN) layer 133 etc. on substrate 10 first, and n type gallium nitride (N-GaN) layer 131, quantum well layer 132 and P type gallium nitride (P-GaN) layer 133 consist of realizes the luminous luminous epitaxial loayer 13 of LED; Then the peeling off with realization substrate 10 and luminous epitaxial loayer 13 with laser fusion resilient coating 11 and described sacrifice layer 12.But in the process of laser lift-off, because resilient coating 11, sacrifice layer 12 and n type gallium nitride layer 131 printing opacity, laser can pass resilient coating 11, sacrifice layer 12 and n type gallium nitride layer 131 and arrive quantum well layer 132, causes the damage of quantum well layer 132, thereby causes the LED luminous efficiency to reduce.
Therefore, how to reduce or when avoiding at the bottom of the peeling liner laser light injury of quantum well layer has been become the problem that those skilled in the art need to solve.
Summary of the invention
Problem of light injury can appear in the quantum well layer of LED epitaxial structure when the existence of prior art LED epitaxial structure was carried out laser lift-off to it, the invention provides a kind of LED epitaxial structure that can address the above problem and preparation method thereof.
The invention provides a kind of LED epitaxial structure, it comprises substrate, resilient coating, sacrifice layer, n type gallium nitride layer, quantum well layer and the P type gallium nitride layer that is arranged in order from bottom to top, it is characterized in that: also have a light shielding layer between described sacrifice layer and the described quantum well layer, described light shielding layer to the absorptivity that is used for the laser at the bottom of the peeling liner greater than the n type gallium nitride material layer of the same thickness absorptivity to laser.
Further, in described LED epitaxial structure, described light shielding layer or between described n type gallium nitride layer and described quantum well layer, or is embedded in the described n type gallium nitride layer between described sacrifice layer and described n type gallium nitride layer.
Further, in described LED epitaxial structure, described light shielding layer has rough surface.
Further, in described LED epitaxial structure, the material of described sacrifice layer is gallium nitride or aluminium gallium nitride alloy.
Further, in described LED epitaxial structure, described light shielding layer is that one or more layers is without graphic films.
Further, in described LED epitaxial structure, the absorptivity of the material for laser light of described light shielding layer is higher than n type gallium nitride to the absorptivity of laser.
Further, in described LED epitaxial structure, the material of described light shielding layer is a kind of or its combination in boron nitride and the aluminium nitride.
Further, in described LED epitaxial structure, described light shielding layer comprises some patterned sub-light shielding layers and articulamentum, the figure of described sub-light shielding layer cooperatively interacts, so that the laser from described substrate one side incident can be stopped by described sub-light shielding layer when described substrate is carried out laser lift-off, described articulamentum is between some described sub-light shielding layers, the material of described articulamentum is aluminium gallium nitride alloy, aluminium nitride, the combination of one or more in the gallium nitride, the absorptivity of the material for laser light of described sub-light shielding layer are higher than n type gallium nitride to the absorptivity of laser.
Further, in described LED epitaxial structure, the material of described the first light shielding layer is one or more the combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer, and the material of described the second light shielding layer is one or more the combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer.
Further, in described LED epitaxial structure, described light shielding layer comprises one patterned first sub-light shielding layer, one patterned second sub-light shielding layer and an articulamentum, the position of the figure of described the first sub-light shielding layer and the figure of described the second sub-light shielding layer is complementary mutually, and described articulamentum is between the described first sub-light shielding layer and the described second sub-light shielding layer.
Further, in described LED epitaxial structure, the shape of cross section of the described first sub-light shielding layer and described the second sub-light shielding layer is grid shape.
Further, the present invention also provides a kind of preparation method of LED epitaxial structure, and it comprises:
Substrate is provided;
Prepare resilient coating at described substrate;
Prepare sacrifice layer at described resilient coating;
At described sacrifice layer preparation n type gallium nitride layer;
Prepare quantum well layer at described n type gallium nitride layer;
At described quantum well layer preparation P type gallium nitride layer;
In the step of described substrate preparation resilient coating with between the step of described n type gallium nitride layer preparation quantum well layer, also comprise preparation one light shielding layer, described light shielding layer between described sacrifice layer and described quantum well layer, described light shielding layer to the absorptivity that is used for the laser at the bottom of the peeling liner greater than the n type gallium nitride material layer of the same thickness absorptivity to laser.
Further, in the preparation method of described LED epitaxial structure, prepare a light shielding layer, the step of described light shielding layer between described sacrifice layer and described quantum well layer comprises
In the step of described resilient coating preparation sacrifice layer with between the step of described sacrifice layer preparation n type gallium nitride layer, at the described light shielding layer of described sacrifice layer preparation;
Or in the step of described sacrifice layer preparation n type gallium nitride layer with between the step of described n type gallium nitride layer preparation quantum well layer, at the described light shielding layer of described n type gallium nitride layer preparation;
Or at described sacrifice layer preparation the first n type gallium nitride layer; At the described light shielding layer of described the first n type gallium nitride layer preparation; At described light shielding layer preparation the second n type gallium nitride layer.
Further, in the preparation method of described LED epitaxial structure, before the described light shielding layer of preparation, alligatoring is carried out on surface to described light shielding layer Direct precipitation described sacrifice layer, described n type gallium nitride layer or described the first n type gallium nitride layer thereon, so that the described light shielding layer of preparation has rough surface.
Further, in the preparation method of described LED epitaxial structure, described light shielding layer be one or more layers without graphic films, the absorptivity of the material for laser light of described light shielding layer is higher than n type gallium nitride to the absorptivity of laser.
Further, in the preparation method of described LED epitaxial structure, the material of described light shielding layer is a kind of or its combination in boron nitride and the aluminium nitride.
Further, in the preparation method of described LED epitaxial structure, described light shielding layer the first sub-light shielding layer, the second sub-light shielding layer and articulamentum, the figure of described sub-light shielding layer is complementary, the material of described articulamentum is one or more the combination in aluminium gallium nitride alloy, aluminium nitride, the gallium nitride, the absorptivity of the material for laser light of described sub-light shielding layer is higher than n type gallium nitride to the absorptivity of laser, wherein
The step for preparing described light shielding layer comprises:
The one first sub-light shielding layer of growing;
At the described first sub-light shielding layer growth one articulamentum;
At described articulamentum growth one second sub-light shielding layer;
Further, in the preparation method of described LED epitaxial structure, the material of described the first light shielding layer is one or more the combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer, and the material of described the second light shielding layer is one or more the combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer.
Compared with prior art, semiconductor device provided by the invention and preparation method thereof has the following advantages:
1. in the LED epitaxial structure of the present invention, but between described sacrifice layer and described quantum well layer, has a light shielding layer, compared with prior art, described light shielding layer has preferably shield effectiveness to laser, when described LED epitaxial structure is carried out laser lift-off, described light shielding layer reduces or stops laser to arrive quantum well layer and cause the light injury of quantum well layer, thereby guarantees the luminous efficiency of quantum well layer.
2. in the LED epitaxial structure of the present invention, described light shielding layer is that one or more layers is without graphic films, the material of described light shielding layer is a kind of or its combination in boron nitride and the aluminium nitride, and boron nitride and aluminium nitride are higher than n type gallium nitride to the absorptivity of laser to the absorptivity of laser; And the lattice of boron nitride and aluminium nitride and the lattice of n type gallium nitride are complementary, so that n type gallium nitride layer or the quantum well layer of growing at light shielding layer have preferably lattice; In addition, the fusing point of boron nitride and aluminium nitride is high, and heat-resisting quantity is good, and with the laser fusion resilient coating time, light shielding layer energy retention is stablized and is not destroyed.
3. in the LED epitaxial structure of the present invention, described light shielding layer comprises some patterned sub-light shielding layers and articulamentum, the figure of described sub-light shielding layer cooperatively interacts, when described substrate was carried out laser lift-off, laser can be blocked fully and can directly not arrive described quantum well layer and cause the light injury of quantum well layer; Simultaneously, described articulamentum is connected with lower one deck with the last layer of described light shielding layer, the material of described articulamentum is aluminium gallium nitride alloy, aluminium nitride, the combination of one or more in the gallium nitride, thereby the last layer that guarantees the described light shielding layer of lattice of described articulamentum is complementary with the lattice that lower one deck is connected, so that when the described light shielding layer described n type gallium nitride layer of preparation or quantum well layer, the lattice of semi-conducting material has continuity, so that described n type gallium nitride layer or quantum well layer can grow preferably lattice, guarantee that described luminous epitaxial loayer has preferably luminous efficiency.
4. in the LED epitaxial structure of the present invention, described light shielding layer has coarse surface, and coarse surface can increase light shielding layer to scattering of light, enters quantum well layer thereby further reduce laser beam, to guarantee the luminous efficiency of quantum well layer.
Description of drawings
Fig. 1 is the generalized section of prior art LED epitaxial structure;
Fig. 2 is the generalized section of the LED epitaxial structure of first embodiment of the invention;
Fig. 3 is the generalized section of the LED epitaxial structure of second embodiment of the invention;
Fig. 4 is the shape of cross section schematic diagram of the second sub-light shielding layer of second embodiment of the invention;
Fig. 5 a-Fig. 5 e is the preparation process of light shielding layer in the second embodiment of the invention;
Fig. 6 is the generalized section of the LED epitaxial structure of third embodiment of the invention;
Fig. 7 a-Fig. 7 e is the preparation process of light shielding layer in the third embodiment of the invention;
Fig. 8 is the generalized section of the LED epitaxial structure of four embodiment of the invention;
Fig. 9 is the generalized section of the LED epitaxial structure of fifth embodiment of the invention;
Figure 10 is the generalized section of the LED epitaxial structure of sixth embodiment of the invention;
Figure 11 is the generalized section of the LED epitaxial structure of seventh embodiment of the invention;
Figure 12 is the generalized section of the LED epitaxial structure of eighth embodiment of the invention;
Figure 13 is the generalized section of the LED epitaxial structure of ninth embodiment of the invention.
Embodiment
In the LED epitaxial structure of prior art, successively grown buffer layer, sacrifice layer, n type gallium nitride layer, quantum well layer and P type gallium nitride layer etc. on substrate, but when with laser substrate being peeled off, laser can pass described resilient coating, sacrifice layer and n type gallium nitride layer and to the quantum well layer injury.The inventor finds through the further investigation to prior art LED epitaxial structure, described resilient coating, sacrifice layer and n type gallium nitride layer are low and cause laser to pass described resilient coating, sacrifice layer and n type gallium nitride layer to the absorption efficiency of laser, but when preparation one deck light shielding layer between described sacrifice layer and described quantum well layer, greater than the n type gallium nitride material layer of the same thickness absorptivity to laser, described light shielding layer can reduce or stop laser to arrive described quantum well layer to described light shielding layer effectively to the absorptivity that is used for the laser at the bottom of the peeling liner.The LED epitaxial structure of prior art does not arrange described light shielding layer and stops that laser passes described sacrifice layer and n type gallium nitride layer, thereby avoids damage that quantum well layer is caused.
Because above-mentioned research, the present invention propose a kind of can avoid at the bottom of the peeling liner time laser to the LED epitaxial structure of the light injury of quantum well layer, described LED epitaxial structure comprises that it comprises substrate, resilient coating, sacrifice layer, n type gallium nitride layer, quantum well layer and the P type gallium nitride layer that is arranged in order from bottom to top, have a light shielding layer between described sacrifice layer and the described quantum well layer, described light shielding layer to the absorptivity that is used for the laser at the bottom of the peeling liner greater than the n type gallium nitride material layer of the same thickness absorptivity to laser.Wherein said light shielding layer is between described sacrifice layer and described n type gallium nitride layer, or between described n type gallium nitride layer and described quantum well layer.
Further, go out preferably lattice in order to make the described luminous outer layer growth on the described light shielding layer, the lattice of described light shielding layer material and the lattice of luminous epitaxial film materials are complementary, and have preferably lattice to guarantee described luminous epitaxial loayer; Or the figure of described sub-light shielding layer cooperatively interacts, when described substrate is carried out laser lift-off, described sub-light shielding layer can stop laser fully and avoid laser straight to receive and reaches described quantum well layer, described articulamentum is between some described sub-light shielding layers, the material of described articulamentum is one or more the combination in aluminium gallium nitride alloy, aluminium nitride, the gallium nitride, the lattice of described articulamentum material and the lattice of luminous epitaxial film materials are complementary, and have preferably lattice to guarantee described luminous epitaxial loayer.
Compare with prior art LED epitaxial structure, in the LED epitaxial structure of the present invention, has a light shielding layer between described sacrifice layer and the described quantum well layer, described light shielding layer reduces or stops laser to arrive quantum well layer and cause the light injury of quantum well layer, thereby guarantees the luminous efficiency of quantum well layer.
See also Fig. 2, Fig. 2 is the generalized section of the LED epitaxial structure of first embodiment of the invention.In the present embodiment, described light shielding layer 24 is between described sacrifice layer 22 and described n type gallium nitride layer 231, and described light shielding layer 24 is that one or more layers is without graphic films.The substrate 20 that described LED epitaxial structure 2 is arranged in order from bottom to top, resilient coating 21, sacrifice layer 22, light shielding layer 24, n type gallium nitride layer 231, quantum well layer 232 and P type gallium nitride layer 233, wherein, n type gallium nitride layer 231, quantum well layer 232 and P type gallium nitride layer 233 consist of luminous epitaxial loayer 23.The material of substrate 20 does not limit, and can be the material that this area is commonly used, is generally sapphire or carborundum etc. such as the material of substrate 21; The material of resilient coating 22 is generally the nitride such as gallium nitride, aluminium gallium nitride alloy, InGaN, and the thickness of resilient coating 22 is 20nm～30nm, so that guarantee can be with the described sacrifice layer 22 of heat transferred, so that described sacrifice layer 22 can be thermal decomposited when the laser lift-off; The material of described sacrifice layer 22 is gallium nitride or aluminium gallium nitride alloy, is complementary with the lattice of assurance with n type gallium nitride layer 231.
Light shielding layer 24 can for one deck without graphic films, or be laminated without graphic films by multilayer.The absorptivity of the material for laser light of light shielding layer 24 is higher than n type gallium nitride to the absorptivity of laser, so that the absorptivity of 24 pairs of laser of light shielding layer is higher than the absorptivity of 231 pairs of laser of n type gallium nitride layer, thereby so that when when realizing peeling off of substrate 20 and luminous epitaxial loayer 23 with the described sacrifice layer 22 of laser fusion, laser is stopped by light shielding layer 24 and can not arrive quantum well layer 232.Better, the material of described light shielding layer 24 is a kind of or its combination in boron nitride and the aluminium nitride, boron nitride and aluminium nitride are higher than n type gallium nitride to the absorptivity of laser to the absorptivity of laser, and the lattice of boron nitride and aluminium nitride and the lattice of n type gallium nitride are complementary, so that have preferably lattice at the n type gallium nitride layer 231 of light shielding layer 24 growths.And the fusing point of boron nitride and aluminium nitride is high, and heat-resisting quantity is good, and with laser fusion sacrifice layer 22 time, light shielding layer 24 retentions are stablized and are not destroyed.For example, light shielding layer 24 can for one deck boron nitride material without graphic films, or be one deck boron nitride and one deck aluminium nitride stacked without graphic films.
Better, described light shielding layer 24 has rough surface, coarse surface can increase by 24 pairs of scatterings of light of light shielding layer and enter quantum well layer 232 to reduce laser beam, when when realizing peeling off of substrate 20 and luminous epitaxial loayer 23 with laser fusion sacrifice layer 22, light shielding layer 24 can stop laser better, avoids laser to the damage of quantum well layer 232.
The processing step of led chip preparation method in the present embodiment below is described.
At first, provide substrate 20.
Then, adopt conventional method at described substrate 21 preparation resilient coatings 21, such as deposition processs such as metallo-organic compound chemical gaseous phase deposition or physical vapour deposition (PVD)s.
Subsequently, adopt conventional method at described resilient coating 21 preparation sacrifice layers 22.
Better, before preparation light shielding layer 24, sacrifice layer 22 is carried out roughening, so that the sacrifice layer 22 of preparation has coarse surface subsequently.
Because in the present embodiment, described light shielding layer 24 is between described sacrifice layer 22 and described n type gallium nitride layer 231, so after described resilient coating 21 preparation sacrifice layers 22, at sacrifice layer 22 preparation light shielding layers 24.In the present embodiment, light shielding layer 24 can adopt the deposition process preparations such as conventional metallo-organic compound chemical gaseous phase deposition or physical vapour deposition (PVD).
Then, carry out at described light shielding layer 24 preparation n type gallium nitride layers 231, because in the present embodiment, light shielding layer 24 is between described sacrifice layer 22 and described n type gallium nitride layer 231, so adopt conventional method at light shielding layer 24 preparation n type gallium nitride layers 231, such as deposition processs such as metallo-organic compound chemical gaseous phase deposition or physical vapour deposition (PVD)s.
Subsequently, adopt the deposition processs such as conventional metallo-organic compound chemical gaseous phase deposition or physical vapour deposition (PVD) at described n type gallium nitride layer 231 preparation quantum well layer 232.
At last, adopt the deposition processs such as conventional metallo-organic compound chemical gaseous phase deposition or physical vapour deposition (PVD) at described quantum well layer 232 preparation P type gallium nitride layers 233.
In the present embodiment, the light emitting diode (LED) chip with vertical structure that described LED epitaxial structure 2 is peeled off for the preparation of needs, when the light emitting diode (LED) chip with vertical structure that preparation need to be peeled off, utilize LASER HEATING to decompose sacrifice layer 22, separate with P type gallium nitride layer 233 with described n type gallium nitride layer 231, quantum well layer 232 to realize described substrate 20.Utilize LASER HEATING to decompose in the process of sacrifice layer 22, causing the light injury of quantum well layer 232 without the light shielding layer 24 of figure rete can reduce or stop laser to arrive quantum well layer 232, thus the luminous efficiency of assurance quantum well layer 232.
See also Fig. 3, Fig. 3 is the generalized section of the LED epitaxial structure of second embodiment of the invention.The LED epitaxial structure 3 of described the second execution mode is basic identical with the LED epitaxial structure 2 of described the first execution mode, and its difference is:
Described light shielding layer 34 comprises one patterned first sub-light shielding layer 341, one patterned second sub-light shielding layer 342 and an articulamentum 343, the position of the figure of the described first sub-light shielding layer 341 and the figure of the described second sub-light shielding layer 342 is complementary mutually, all can be stopped by described light shielding layer 34 with the laser of assurance from the incident of described substrate direction, can not arrive described quantum well layer 332, described articulamentum 343 is between the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342, so that have better Lattice Matching between described light shielding layer 34 and the described n type gallium nitride layer 231.
The material of the described first sub-light shielding layer 341 is better is one or more combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer, boron nitride, aluminium nitride, light shield metal, light shield oxide or light shield polymer are higher than n type gallium nitride to the absorptivity of laser to the absorptivity of laser, can effectively stop laser.The material of the described second sub-light shielding layer 342 is better is one or more combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer, boron nitride, aluminium nitride, light shield metal, light shield oxide or light shield polymer are higher than n type gallium nitride to the absorptivity of laser to the absorptivity of laser, can effectively stop laser.Wherein, the material of the material of the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342 can be identical, also can be different.
The material of described articulamentum 343 is better is one or more combination in aluminium gallium nitride alloy, aluminium nitride, the gallium nitride, have better Lattice Matching between the lattice of aluminium gallium nitride alloy, aluminium nitride, gallium nitride and described resilient coating 32 and the described n type gallium nitride layer 231, can make the described n type gallium nitride layer 231 on the described articulamentum 343 have preferably lattice.
The shape of cross section of the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342 can be any regular figure or irregular figure, better, the shape of cross section of the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342 is grid shape, as shown in Figure 4, the grid part is as the nuclei of crystallization, the GaN that clathrate is exposed (in the present embodiment for sacrifice layer 32 or articulamentum 343) zone can be used as the articulamentum 343 that next will deposit or the nuclei of crystallization of n type gallium nitride layer 231, can reach the effect of preferably laser shielding, but the shape of cross section of the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342 is not limited to grid shape, such as bar shaped etc. also within thought range of the present invention.
Better, the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342 have rough surface, coarse surface can increase the described first sub-light shielding layer 341 and 342 pairs of scatterings of light of the described second sub-light shielding layer, when when realizing peeling off of substrate 30 and luminous epitaxial loayer 33 with laser fusion sacrifice layer 32, the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342 can stop laser better, avoid laser to the damage of quantum well layer 332.
Because in the present embodiment, described light shielding layer 34 is between described sacrifice layer 32 and described n type gallium nitride layer 331, so after described resilient coating 31 preparation sacrifice layers 32, at sacrifice layer 32 preparation light shielding layers 34.Specify the preparation process of light shielding layer 34 in the present embodiment below in conjunction with Fig. 5 a-Fig. 5 e.
At first, at described sacrifice layer 32 growths one first sub-light shielding layer 341.
In the present embodiment, the step at described sacrifice layer 32 growths one first sub-light shielding layer 341 is: 1) adopt conventional method at described sacrifice layer 32 growths one first sub-optical screen film 341 ', shown in Fig. 5 a; 2) selective etch the described first sub-optical screen film 341 ' forms the patterned first sub-light shielding layer 341, shown in Fig. 5 b.
Then, adopt conventional method at the described first sub-light shielding layer 341 growths one articulamentum 343, shown in Fig. 5 c, because the lattice of described articulamentum 343 and the Lattice Matching of described sacrifice layer 32, so described articulamentum 343 is connected closely with described sacrifice layer 32, and the lattice growth of described articulamentum 343 is better;
Subsequently, at described articulamentum 343 growths one second sub-light shielding layer 342.
In the present embodiment, the step at described articulamentum 343 growths one second sub-light shielding layer 342 is: a) adopt conventional method at described articulamentum 343 growths one second sub-optical screen film 342 ', shown in Fig. 5 d; B) adopt conventional method selective etch the described second sub-optical screen film 342 ', the described articulamentum 343 of exposed portions serve forms the second sub-light shielding layer 342, shown in Fig. 5 e.
After the described second sub-light shielding layer 342 preparations are finished, described light shielding layer 34 forms, afterwards when the described n type gallium nitride layer 331 of described light shielding layer 34 preparations, because the described articulamentum 343 of part exposes, described n type gallium nitride layer 331 contacts with the described articulamentum 343 of exposed portions serve, and the lattice of the material of the material of described n type gallium nitride layer 331 and described articulamentum 343 is complementary, institute is so that described n type gallium nitride layer 331 has preferably lattice, and described n type gallium nitride layer 331 growth better.
In the present embodiment, described light shielding layer 34 has figure mutually the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342 of complementation, when decomposing described sacrifice layer 32 with utility laser, laser can be blocked fully and can not cause the light injury of quantum well layer 232; Simultaneously, be connected by described articulamentum 343 between the described first sub-light shielding layer 341 and the described second sub-light shielding layer 342, described articulamentum 343 is connected with described n type gallium nitride layer 331 with described sacrifice layer 32 respectively, thereby the lattice that guarantees described articulamentum 343 is complementary with the lattice of described sacrifice layer 32 and described n type gallium nitride layer 331 respectively, so that described sacrifice layer 32, described articulamentum 343, the lattice of described n type gallium nitride layer 331 has continuity when growth, so that described n type gallium nitride layer 331 can grow preferably lattice, guarantee that described luminous epitaxial loayer 33 has preferably luminous efficiency.
See also Fig. 6, Fig. 6 is the cross-sectional view of LED epitaxial structure the 3rd execution mode of the present invention.The LED epitaxial structure 4 of described the 3rd execution mode can be basic identical with the LED epitaxial structure 3 of described the second execution mode, and its difference is:
Step at the described light shielding layer 44 of described sacrifice layer 42 preparations comprises:
Step at described sacrifice layer 42 growths one first sub-light shielding layer 441 is: 1. adopt the conventional described resilient coating 42 of method selective etch, to form the first groove 491 at described resilient coating 42, shown in Fig. 7 a; 2. adopt conventional method at described the first groove 491 interior formation the first sub-light shielding layers 442, as depositing first one deck the first sub-optical screen film, grind again, form the first sub-light shielding layer 442 shown in Fig. 7 b, this is ordinary skill in the art means, and therefore not to repeat here.
In the present embodiment, the step at described articulamentum 443 growths one second sub-light shielding layer 442 is:
Adopt the conventional described articulamentum 443 of method selective etch, to form the second groove 492 at described articulamentum, shown in Fig. 7 d;
Adopt conventional method at described the second groove 492 interior formation the second sub-light shielding layers 442, shown in Fig. 7 e.
In the present embodiment, in the step of described sacrifice layer 42 growths one first sub-light shielding layer 441 can be for the second embodiment 1), 2) step, or in the step of described articulamentum 443 growths one second sub-light shielding layer 442 can be for the second embodiment a), b) step.
In the present embodiment, described articulamentum 443 can be connected with described n type gallium nitride layer 431 with described resilient coating 42 respectively equally, thereby the lattice that guarantees described articulamentum 443 is complementary with the lattice of described resilient coating 42 and described n type gallium nitride layer 431 respectively, so that the lattice of described resilient coating 42, described articulamentum 443, described n type gallium nitride layer 431 has continuity when growth, can grow preferably lattice thereby reach described n type gallium nitride layer 431, guarantee that described luminous epitaxial loayer 43 has the preferably beneficial effect of luminous efficiency.
See also Fig. 8, Fig. 8 is the cross-sectional view of LED epitaxial structure the 4th execution mode of the present invention.The difference of the LED epitaxial structure 5 of described the 4th execution mode and the LED epitaxial structure 2 of the first execution mode is: described light shielding layer 54 is between described n type gallium nitride layer 531 and described quantum well layer 532.Step at the described light shielding layer 54 of described n type gallium nitride layer 531 preparation comprises: at described n type gallium nitride layer 531 one or more layers described light shielding layer 54 without graphic films of growth.In the present embodiment; described light shielding layer 54 can also be when laser lift-off substrate 50; stop that laser arrives quantum well layer 532, thereby reach the injury-free beneficial effect of protection quantum well layer 532, and can make the described quantum well layer 532 on the described articulamentum 543 have preferably lattice.
See also Fig. 9, Fig. 9 is the cross-sectional view of LED epitaxial structure the 5th execution mode of the present invention.The difference of the LED epitaxial structure 6 of described the 5th execution mode and the LED epitaxial structure 3 of the second execution mode is: described light shielding layer 64 is between described n type gallium nitride layer 631 and described quantum well layer 632.Step at the described light shielding layer 632 of described n type gallium nitride layer 631 preparation comprises:
At described n type gallium nitride layer 631 growth one first sub-light shielding layer 641, wherein, specifically comprise: 1＞at described n type gallium nitride layer 631 growth one first sub-optical screen film; 2＞selective etch the described first sub-optical screen film forms the first sub-light shielding layer 641;
At described articulamentum 642 growths one second sub-optical screen film;
At described articulamentum 642 growths one second sub-light shielding layer 643, wherein, specifically comprise: a＞at 631 layers of growth of described n type gallium nitride, one first sub-optical screen film; B＞selective etch the described second sub-optical screen film forms the second sub-light shielding layer 643.
In the present embodiment; described light shielding layer 64 can also be when laser lift-off substrate 60; stop that laser arrives quantum well layer 632, thereby reach the injury-free beneficial effect of protection quantum well layer 632, and can make the described quantum well layer 532 on the described articulamentum 643 have preferably lattice.
See also Figure 10, Figure 10 is the cross-sectional view of LED epitaxial structure the 6th execution mode of the present invention.The difference of the LED epitaxial structure 7 of described the 6th execution mode and the LED epitaxial structure 6 of the 5th execution mode is: the step at the described light shielding layer 74 of described n type gallium nitride layer 731 preparation comprises:
Step at described n type gallium nitride layer 631 growth one first sub-light shielding layer 641 comprises:
The described n type gallium nitride layer 731 of selective etch is to form the first groove at described n type gallium nitride layer 731;
In described the first groove, form the first sub-light shielding layer 741.
Step at described articulamentum 642 growths one second sub-light shielding layer 643 comprises:
The described articulamentum 743 of selective etch is to form the second groove at described articulamentum;
In described the second groove, form the second sub-light shielding layer 742.
In the present embodiment, in the step of described sacrifice layer 62 growths one first sub-light shielding layer 641 can be for the second embodiment 1＞, 2＞step, or in the step of described articulamentum 643 growths one second sub-light shielding layer 642 can be for the second embodiment a＞, b＞step.
In the present embodiment; described light shielding layer 74 can also be when laser lift-off substrate 70; stop that laser arrives quantum well layer 732, thereby reach the injury-free beneficial effect of protection quantum well layer 732, and can make the described quantum well layer 732 on the described articulamentum 743 have preferably lattice.
See also Figure 11, Figure 11 is the generalized section of the LED epitaxial structure of seventh embodiment of the invention.The difference of the LED epitaxial structure 8 of described the 7th execution mode and the LED epitaxial structure 2 of the first execution mode is: described light shielding layer 84 is embedded in the described n type gallium nitride layer 831, and the step for preparing n type gallium nitride layers 831 at described sacrifice layer 82 comprises: at described sacrifice layer 82 preparations the first n type gallium nitride layer 8311; At the described light shielding layer 84 of described the first n type gallium nitride layer 8311 preparation; At described light shielding layer 84 preparations the second n type gallium nitride layer 8312.In the present embodiment; described light shielding layer 84 can also be when laser decomposes described sacrifice layer 82; stop that laser arrives quantum well layer 832; thereby reach the injury-free beneficial effect of protection quantum well layer 832, and can make the described quantum well layer 832 on the described articulamentum 843 have preferably lattice.
See also Figure 12, Figure 12 is the cross-sectional view of LED epitaxial structure the 8th execution mode of the present invention.The difference of the LED epitaxial structure 9 of described the 8th execution mode and the LED epitaxial structure 3 of the second execution mode is: described light shielding layer 94 is embedded in the described n type gallium nitride layer 931, and the step for preparing n type gallium nitride layers 931 at described sacrifice layer 92 comprises: at described sacrifice layer 92 preparations the first n type gallium nitride layer 9311; At the described light shielding layer 94 of described the first n type gallium nitride layer 9311 preparation; At described light shielding layer 94 preparations the second n type gallium nitride layer 9312.
Wherein, the step at the described light shielding layer 94 of described the first n type gallium nitride layer 9311 preparation comprises: at described the first n type gallium nitride layer 9311 growth one first sub-light shielding layer 941; At the described first sub-light shielding layer 941 growths one articulamentum 943; At described articulamentum 943 growths one second sub-light shielding layer 932.
In the present embodiment; described light shielding layer 94 can also be when laser decomposes described sacrifice layer 92; stop that laser arrives quantum well layer 932; thereby reach the injury-free beneficial effect of protection quantum well layer 932, and can make the described quantum well layer 932 on the described articulamentum 943 have preferably lattice.
The present invention discloses as above with preferred embodiment, but the present invention and non-limiting above-mentioned execution mode are described, as: as described in the first sub-light shielding layer as described in sacrifice layer and as described between the n type gallium nitride layer, the described second sub-light shielding layer is between described n type gallium nitride layer and described quantum well layer; Described light shielding layer comprises one patterned first sub-light shielding layer 1041, one patterned second sub-light shielding layer 1042, one the patterned the 3rd sub-light shielding layer 1045 and one first articulamentum 1043, one second articulamentum 1044, the figure of the described first sub-light shielding layer 1041, match in the position of the figure of the figure of the described second sub-light shielding layer 1042 and the described the 3rd sub-light shielding layer 1045, the first articulamentum 1043 is between the described first sub-light shielding layer 1041 and the described second sub-light shielding layer 1042, the second articulamentum 1044 is between the described second sub-light shielding layer 1042 and the described the 3rd sub-light shielding layer 1045, as shown in figure 13.
Although the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.
Claims (18)
1. LED epitaxial structure, it comprises substrate, resilient coating, sacrifice layer, n type gallium nitride layer, quantum well layer and the P type gallium nitride layer that is arranged in order from bottom to top, it is characterized in that: also have a light shielding layer between described sacrifice layer and the described quantum well layer, described light shielding layer to the absorptivity that is used for the laser at the bottom of the peeling liner greater than the n type gallium nitride material layer of the same thickness absorptivity to laser.
2. LED epitaxial structure as claimed in claim 1 is characterized in that: described light shielding layer or between described n type gallium nitride layer and described quantum well layer, or is embedded in the described n type gallium nitride layer between described sacrifice layer and described n type gallium nitride layer.
3. LED epitaxial structure as claimed in claim 1, it is characterized in that: described light shielding layer has rough surface.
4. LED epitaxial structure as claimed in claim 1, it is characterized in that: the material of described sacrifice layer is gallium nitride or aluminium gallium nitride alloy.
5. such as each described LED epitaxial structure in the claim 1 to 4, it is characterized in that: described light shielding layer is that one or more layers is without graphic films.
6. LED epitaxial structure as claimed in claim 5, it is characterized in that: the absorptivity of the material for laser light of described light shielding layer is higher than n type gallium nitride to the absorptivity of laser.
7. LED epitaxial structure as claimed in claim 6, it is characterized in that: the material of described light shielding layer is a kind of or its combination in boron nitride and the aluminium nitride.
8. such as each described LED epitaxial structure in the claim 1 to 4, it is characterized in that: described light shielding layer comprises some patterned sub-light shielding layers and articulamentum, the figure of described sub-light shielding layer cooperatively interacts, so that the laser from described substrate one side incident can be stopped by described sub-light shielding layer when described substrate is carried out laser lift-off, described articulamentum is between some described sub-light shielding layers, the material of described articulamentum is aluminium gallium nitride alloy, aluminium nitride, the combination of one or more in the gallium nitride, the absorptivity of the material for laser light of described sub-light shielding layer are higher than n type gallium nitride to the absorptivity of laser.
9. LED epitaxial structure as claimed in claim 8, it is characterized in that: the material of described the first light shielding layer is one or more the combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer, and the material of described the second light shielding layer is one or more the combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer.
10. LED epitaxial structure as claimed in claim 8, it is characterized in that: described light shielding layer comprises one patterned first sub-light shielding layer, one patterned second sub-light shielding layer and an articulamentum, the position of the figure of described the first sub-light shielding layer and the figure of described the second sub-light shielding layer is complementary mutually, and described articulamentum is between the described first sub-light shielding layer and the described second sub-light shielding layer.
11. LED epitaxial structure as claimed in claim 10 is characterized in that: the shape of cross section of the described first sub-light shielding layer and described the second sub-light shielding layer is grid shape.
12. the preparation method of a LED epitaxial structure, it comprises:
Substrate is provided;
Prepare resilient coating at described substrate;
Prepare sacrifice layer at described resilient coating;
At described sacrifice layer preparation n type gallium nitride layer;
Prepare quantum well layer at described n type gallium nitride layer;
At described quantum well layer preparation P type gallium nitride layer;
It is characterized in that: in the step of described substrate preparation resilient coating with between the step of described n type gallium nitride layer preparation quantum well layer, also comprise preparation one light shielding layer, described light shielding layer between described sacrifice layer and described quantum well layer, described light shielding layer to the absorptivity that is used for the laser at the bottom of the peeling liner greater than the n type gallium nitride material layer of the same thickness absorptivity to laser.
13. the preparation method of LED epitaxial structure as claimed in claim 12 is characterized in that: prepare a light shielding layer, the step of described light shielding layer between described sacrifice layer and described quantum well layer comprises
In the step of described resilient coating preparation sacrifice layer with between the step of described sacrifice layer preparation n type gallium nitride layer, at the described light shielding layer of described sacrifice layer preparation;
Or in the step of described sacrifice layer preparation n type gallium nitride layer with between the step of described n type gallium nitride layer preparation quantum well layer, at the described light shielding layer of described n type gallium nitride layer preparation;
Or at described sacrifice layer preparation the first n type gallium nitride layer; At the described light shielding layer of described the first n type gallium nitride layer preparation; At described light shielding layer preparation the second n type gallium nitride layer.
14. the preparation method of LED epitaxial structure as claimed in claim 13, it is characterized in that: before the described light shielding layer of preparation, alligatoring is carried out on surface to described light shielding layer Direct precipitation described sacrifice layer, described n type gallium nitride layer or described the first n type gallium nitride layer thereon, so that the described light shielding layer of preparation has rough surface.
15. the preparation method such as each described LED epitaxial structure in the claim 13 to 14, it is characterized in that: described light shielding layer for one or more layers without graphic films, the absorptivity of the material for laser light of described light shielding layer is higher than n type gallium nitride to the absorptivity of laser.
16. the preparation method of LED epitaxial structure as claimed in claim 15 is characterized in that: the material of described light shielding layer is a kind of or its combination in boron nitride and the aluminium nitride.
17. the preparation method such as each described LED epitaxial structure in the claim 13 to 14, it is characterized in that: described light shielding layer the first sub-light shielding layer, the second sub-light shielding layer and articulamentum, the figure of described sub-light shielding layer is complementary, the material of described articulamentum is one or more the combination in aluminium gallium nitride alloy, aluminium nitride, the gallium nitride, the absorptivity of the material for laser light of described sub-light shielding layer is higher than n type gallium nitride to the absorptivity of laser, wherein
The step for preparing described light shielding layer comprises:
The one first sub-light shielding layer of growing;
At the described first sub-light shielding layer growth one articulamentum;
At described articulamentum growth one second sub-light shielding layer.
18. the preparation method of LED epitaxial structure as claimed in claim 17, it is characterized in that: the material of described the first light shielding layer is one or more the combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer, and the material of described the second light shielding layer is one or more the combination in boron nitride, aluminium nitride, light shield metal, light shield oxide or the light shield polymer.
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| WO2018161300A1 (en) * | 2017-03-09 | 2018-09-13 | Enkris Semiconductor, Inc | Stripped method for prepairing semiconductor structure |
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| WO2021129726A1 (en) * | 2019-12-26 | 2021-07-01 | 华灿光电(苏州）有限公司 | Micro light-emitting diode epitaxial wafer, display array and manufacturing method therefor |
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